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ISSUE 28: SCIENTIFIC LITERATURE (Mid May 2005 to Early August 2005) |
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From the Technical Literature The material in this section is selected from scientific and technical papers that became available during the reporting time period. Links to online abstracts are provided. Most online abstracts are freely accessible to the public. A few require journal subscriptions or memberships, and are noted as such. The technical literature section is roughly organized by subject area and, within subjects, alphabetically by institution of the lead author. Use the links below to go directly to a section. A. Materials and Device Fabrication B. Materials and Device Design Properties A. Materials and Device Fabrication
·
Aristotle University of Thessaloniki (Greece) / ENSICAEN (France): "Interfacial steps,
dislocations, and inversion domain boundaries in the GaN/AlN/Si (0001)/(111)
epitaxial system." G.P. Dimitrakopulos, A.M. Sanchez, P. Komninou, T.
Kehagias, T. Karakostas, G. Nouet, and P. Ruterana, Physica Status Solidi
B-Basic Solid State Physics, 242(8):1617-1627 (July 2005). [
Abstract ]
·
Auburn University / West Virginia University: "Control of nitrogen species in helicon
plasmas." R.F. Boivin and E.E. Scime, Plasma Sources Science &
Technology, 14(2):283-292 (May 2005). [
Abstract ]
·
Beijing Institute of Technology (China) / Beijing University of Science & Technology (China) /
Yantai Normal University (China): "Synthesis of beta-GaN
nanocrystals with a cubic structure by gas-phase chemical reaction."
K. Fang, S.M. Gao, H.L. Qiu, C.B. Cao, and H.S. Zhu, Acta Physica Sinica,
54(5):2267-2271 (May 2005). [No URL available]
·
Belarussian State
University (Byelarus) / Belarussian National Technical University (Byelarus): "Optical
properties of GaN synthesized by implantation of nitrogen ions into GaAs."
Y.A. Bumai, D.S. Bobuchenko, A.N. Akimov, L.A. Vlasukova, and A.R. Filipp, Vacuum,
78(2-4):119-122 (May 30, 2005). [
Abstract ]
·
Berdyansk State Pedagogical
University (Ukraine) / National Academy of Sciences (Ukraine): "Properties
of cubic GaN films obtained by nitridation of porous GaAs(001)." V.V.
Kidalov, G.A. Sukach, A.S. Revenko, and A.D. Bayda, Physica Status Solidi
a-Applications and Materials Science, 202(8):1668-1672 (June 2005). [
Abstract ]
·
Boston University: "Investigation
of the design parameters of AlN/GaN multiple quantum wells grown by molecular
beam epitaxy for intersubband absorption." I. Friel, K. Driscoll, E.
Kulenica, M. Dutta, R. Paiella, and T.D. Moustakas, Journal of Crystal
Growth, 278(1-4):387-392 (May 1, 2005). [
Abstract ]
·
Brookhaven National
Laboratory / University of Wisconsin: "Selected growth of cubic
and hexagonal GaN epitaxial films on polar MgO(111)." V.K. Lazarov, J.
Zimmerman, S.H. Cheung, L. Li, M. Weinert, and M. Gajdardziska-Josifovska, Physical
Review Letters, 94(21):216101 (June 3, 2005). [
Abstract ]
·
Chalmers University of Technology
(Sweden) / Royal Institute of Technology (Sweden): "Structural and
optical properties of GaN/AlN multiple quantum wells for intersubband
applications." X.Y. Liu, J.F. Falth, T.G. Andersson, P. Holmstrom, P.
Janes, U. Ekenberg, and L. Thylen, Journal of Crystal Growth,
278(1-4):397-401 (May 1, 2005). [
Abstract ]
·
Chiba University (Japan) /
Furukawa Electric Co Ltd (Japan): "Fine-structure N-polarity
InN/InGaN multiple quantum wells grown on GaN underlayer by molecular-beam
epitaxy." S.B. Che, W. Terashima, Y. Ishitani, A. Yoshikawa, T.
Matsuda, H. Ishii, and S. Yoshida, Applied Physics Letters,
86(26):261903 (June 27, 2005). [
Abstract ]
·
Chinese Academy of Sciences
(China): "Crack-free GaN/Si(111) epitaxial layers grown with
InAlGaN alloy as compliant interlayer by metalorganic chemical vapor deposition."
J.J. Wu, X.X. Han, J.M. Li, D.B. Li, Y. Lu, H.Y. Wei, G.W. Cong, X.L. Liu et
al, Journal of Crystal Growth, 279(3-4):335-340 (June 1, 2005). [
Abstract ]
·
Chinese Academy of Sciences
(China): "The effect of the AlxGa1-xN/AIN buffer layer on the
properties of GaN/Si(111) film grown by NH3-MBE." N.H. Zhang, X.L.
Wang, Y.P. Zeng, H.L. Xiao, J.X. Wang, H.X. Liu, and J.M. Li, Journal of
Crystal Growth, 280(3-4):346-351 (July 1, 2005). [
Abstract ]
·
Chonbuk National University
(South Korea): "X-ray and cathodoluminescence study on the effect
of intentional long time annealing of the InGaN/GaN multiple quantum wells
grown by MOCVD." T.S. Jeong, J.H. Kim, M.S. Han, K.Y. Lim, and C. Youn,
Journal of Crystal Growth, 280(3-4):357-363 (July 1, 2005). [
Abstract ]
·
Chonbuk National University
(South Korea) / Donga University (South Korea): "Effect of
compressive strain relaxation in GaN blue light-emitting diodes with variation
of n(+)-GaN thickness on its device performance." C.S. Kim, H.G. Kim,
C.H. Hong, and H.K. Cho, Applied Physics Letters, 87(1):013502 (July 4,
2005). [
Abstract ]
·
Chonbuk National University
(South Korea) / Mokpo National University (South Korea) / Phion Technology Inc
(South Korea): "Room-temperature luminescence study on the effect
of Mg activation annealing on p-GaN layers grown by MOCVD." T.S.
Jeong, J.H. Kim, M.S. Han, K.Y. Lim, C.J. Youn, J.O. Kim, Y.J. Jung, and H. Lee,
Journal of Crystal Growth, 280(3-4):401-407 (July 1, 2005). [
Abstract ]
·
Chung Yuan Christian
University (Taiwan) / Institute Nuclear Energy Research (Taiwan): "Epitaxial
growth of high-quality GaN on appropriately nitridated Si substrate by metal
organic chemical vapor deposition." W.Y. Uen, Z.Y. Li, S.M. Lan, and
S.M. Liao, Journal of Crystal Growth, 280(3-4):335-340 (July 1, 2005). [
Abstract ]
·
Chungbuk National
University (South Korea) / Electronics & Telecommunications Research
Institute (South Korea) / Korea Research Institute of Standards & Science
(South Korea): "Effect of Si doping on the structural and the
optical properties in high-quality AlxGa1-xN/GaN heterostructures grown by
metalorganic chemical vapor deposition." H.S. Kwack, Y.H. Cho, S.B.
Bae, D.K. Oh, K.S. Lee, and C.S. Kim, Journal of the Korean Physical Society,
46(5):1137-1141 (May 2005). [
Abstract ]
·
CNR (Italy): "Interaction
between dislocations and He-implantation-induced voids in GaN epitaxial layers."
D. Alquier, C. Bongiorno, F. Roccaforte, and V. Raineri, Applied Physics
Letters, 86(21):211911 (May 23, 2005). [
Abstract ]
·
CNRS (France): "Ductile
relaxation in cracked metal-organic chemical-vapor-deposition-grown AlGaN films
on GaN." J.M. Bethoux and P. Vennegues, Journal of Applied Physics,
97(12):123504 (June 15, 2005). [
Abstract ]
·
CNRS (France) /
StMicroelectronics (Switzerland) / EPFL (Switzerland): "Hexagonal
c-axis GaN layers grown by metalorganic vapor-phase epitaxy on Si(001)."
S. Joblot, E. Feltin, E. Beraudo, P. Vennegues, M. Leroux, F. Omnes, M. Laugt,
and Y. Cordier, Journal of Crystal Growth, 280(1-2):44-53 (June 15,
2005). [
Abstract ]
·
Cornell University: "Green
emission from Er-doped GaN powder." H.Q. Wu, C.B. Poitras, M. Lipson,
M.G. Spencer, J. Hunting, and F.J. Disalvo, Applied Physics Letters,
86(19):191918 (May 9, 2005). [
Abstract ]
·
CSIC (Spain) / Slovak
Academy of Sciences (Slovakia) / University of Carlos III Madrid (Spain) /
University of Pontificia Comillas (Spain): "Growth dynamics of
reactive-sputtering-deposited AlN films." M.A. Auger, L. Vazquez, O.
Sanchez, M. Jergel, R. Cuerno, and M. Castro, Journal of Applied Physics,
97(12):123528 (June 15, 2005). [
Abstract ]
·
CSIC (Spain) / University
of Complutense de Madrid (Spain) / Universidad Politécnica de Madrid (Spain): "Effect
of the implantation temperature on lattice damage of Be+-implanted GaN."
D. Pastor, R. Cusco, L. Artus, G. Gonzalez-Diaz, S. Fernandez, and E. Calleja, Semiconductor
Science and Technology, 20(5):374-377 (May 2005). [
Abstract ]
·
Duke University / CNR
(Italy) / INSTM (Italy): "Impact of unintentional and intentional
nitridation of the 6H-SiC(0001)(Si) substrate on GaN epitaxy." T.H.
Kim, S.J. Choi, M. Morse, P. Wu, C.Y. Yi, A. Brown, M. Losurdo, M.M.
Giangregorio et al, Journal of Vacuum Science & Technology B,
23(3):1181-1185 (May 2005-June 30, 2005). [
Abstract ]
·
Electronics &
Telecommunications Research Institute (South Korea) / Hanyang University (South
Korea): "The fabrication technique and electrical properties of a free-standing
GaN nanowire." H.Y. Yu, B.H. Kang, C.W. Park, U.H. Pi, C.J. Lee, and
S.Y. Choi, Applied Physics A-Materials Science & Processing,
81(2):245-247 (July 2005). [
Abstract ]
·
Faculte des Sciences de
Monastir (Tunisia) / CNRS (France): "LP MOVPE growth and
characterization of high Al content Al(x)Ga1-N-x epilayers." C. Touzi,
F. Omnes, B. El Jani, and P. Gibart, Journal of Crystal Growth,
279(1-2):31-36 (May 15, 2005). [
Abstract ]
·
Fraunhofer Institute for
Applied Solid State Physics (Germany): "Control of the Mg doping
profile in III-N light-emitting diodes and its effect on the
electroluminescence efficiency." K. Kohler, T. Stephan, A. Perona, J.
Wiegert, M. Maier, M. Kunzer, and J. Wagner, Journal of Applied Physics,
97(10):1, P.104914 (May 15, 2005). [
Abstract ]
·
Fukui University (Japan): "Band
gap widening of MBE grown InN layers by impurity incorporation." Y.
Uesaka, A. Yamamoto, and A. Hashimoto, Journal of Crystal Growth,
278(1-4):402-405 (May 1, 2005). [
Abstract ]
·
Georgia Institute of
Technology: "Mg doped GaN using a valved, thermally energetic
source: enhanced incorporation, and control." S.D. Burnham, G.
Namkoong, W. Henderson, and W.A. Doolittle, Journal of Crystal Growth,
279(1-2):26-30 (May 15, 2005). [
Abstract ]
·
GRE (France) / Soitec SA
(France): "Transfers of 2-inch GaN films onto sapphire substrates
using Smart Cut (TM) technology." A. Tauzin, T. Akatsu, M. Rabarot, J.
Dechamp, M. Zussy, H. Moriceau, J.E. Michaud, A.M. Charvet et al, Electronics
Letters, 41(11):668-670 (May 26, 2005). [
Abstract ]
·
Hokkaido University
(Japan): "Study on ECR dry etching and selective MBE growth of
AlGaN/GaN for fabrication of quantum nanostructures on GaN (0001) substrates."
T. Oikawa, F. Ishikawa, T. Sato, T. Hashizume, and H. Hasegawa, Applied
Surface Science, 244(1-4):84-87 (May 15, 2005). [
Abstract ]
·
Huazhong University of
Science & Technology (China) / University of Hong Kong (China): "Variable
energy positron annihilation spectroscopy of GaN grown on sapphire substrates
with MOCVD." Y.F. Hu, C.D. Beling, and S. Fung, Chinese Physics
Letters, 22(5):1214-1217 (May 2005). [
Abstract ]
·
Indian Association for the
Cultivatation of Science (India): "Synthesis of gallium nitride
films by a novel electrodeposition route." R.K. Roy and A.K. Pal,
Materials Letters, 59(17):2204-2209 (July 2005). [
Abstract ]
·
Instituto Politecnico Nacional
(Mexico): "Effects of substrate nitridation time on the thermal
properties of GaN films grown on silicon by molecular beam epitaxy." M. Cervantes-Contreras, M.
Lopez-Lopez, G.G. De La Cruz, P. Rodriguez, M. Tamura, and T. Yodo, Journal
de Physique IV, 125:205-208 (June 2005). [
Abstract ]
·
Instituto Politecnico
Nacional (Mexico) / Osaka Institute of Technology (Japan): "Thermal
properties of GaN/Si heterostructures grown by molecular beam epitaxy."
M. Cervantes-Contreras, C.A. Quezada-Maya, M. Lopez-Lopez, G.G. De La Cruz, M.
Tamura, and T. Yodo, Journal of Crystal Growth, 278(1-4):415-420 (May 1,
2005). [
Abstract ]
·
Instituto Superior Tecnico
(Portugal) / University Nova Lisboa (Portugal) / Institute Tecnológico e
Nuclear (Portugal): "Structural and composition analysis of GaN
films deposited by cyclic-PLD at different substrate temperatures." P.
Sanguino, Teodoro Omnd, M. Niehus, C.P. Marques, A.M.C. Moutinho, E. Alves, and
R. Schwarz, Sensors and Actuators A-Physical, 121(1):131-135 (May 31,
2005). [
Abstract ]
·
JST (Japan) / National
Institute for Materials Science (Japan): "GaN nanostructure
fabrication by focused-ion-beam-assisted chemical vapor deposition."
T. Nagata, P. Ahmet, Y. Sakuma, T. Sekiguchi, and T. Chikyow, Applied
Physics Letters, 87(1):013103 (July 4, 2005). [
Abstract ]
·
Kansas State University: "Unintentionally
doped n-type Al0.67Ga0.33N epilayers." M.L. Nakarmi, N. Nepal, J.Y.
Lin, and H.X. Jiang, Applied Physics Letters, 86(26):261902 (June 27,
2005). [
Abstract ]
·
Korea Maritime University
(South Korea) / Korea Maritime University (South Korea) / Andong National University
(South Korea) / Cheju National University (South Korea) / Nagoya University
(Japan): "Characterization of AlGaN layer with high Al content
grown by mixed-source HVPE." H.S. Ahn, K.H. Kim, M. Yang, J.Y. Yi,
H.J. Lee, J.H. Chang, H.S. Kim, S.W. Kim et al, Physica Status Solidi
a-Applications and Materials Science, 202(6):1048-1052 (May 2005). [
Abstract ]
·
Kyocera Corp (Japan) /
Meijo University (Japan): "Impact of H-2-preannealing of the
sapphire substrate on the crystallinity of low-temperature-deposited AIN buffer
layer." M. Tsuda, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano,
and I. Akasaki, Japanese Journal of Applied Physics Part 1-Regular Papers
Short Notes & Review Papers, 44(6a):3913-3917 (June 2005). [
Abstract ]
·
Lawrence Berkeley National
Laboratory / Pacific Northwest National Laboratory / Oriol Inc: "Investigation
of microstructure and V-defect formation in InxGa1-xN/GaN MQW grown using
temperature-gradient metalorganic chemical vapor deposition." M.C.
Johnson, Z. Liliental-Weber, D.N. Zakharov, D.E. Mccready, R.J. Jorgenson, J.
Wu, W. Shan, and E.D. Bourret-Courchesne, Journal of Electronic Materials,
34(5):605-611 (May 2005). [
Abstract ]
·
Linkoping University
(Sweden): "Sublimation growth of AlN crystals: Growth mode and
structure evolution." R. Yakimova, A. Kakanakova-Georgieva, G.R.
Yazdi, G.K. Gueorguiev, and M. Syvajarvi, Journal of Crystal Growth,
281(1):81-86 (July 15, 2005). [
Abstract ]
·
Linkoping University
(Sweden) / Bulgarian Academy of Sciences (Bulgaria): "Growth of thick
GaN layers with hydride vapour phase epitaxy." B. Monemar, H. Larsson,
C. Hemmingsson, I.G. Ivanov, and D. Gogova, Journal of Crystal Growth,
281(1):17-31 (July 15, 2005). [
Abstract ]
·
Linkoping University
(Sweden) / University of Sofia (Bulgaria): "Properties of nonpolar
a-plane GaN films grown by HVPE with AlN buffers." T. Paskova, V.
Darakchieva, P. Paskov, J. Birch, E. Valcheva, P.O.A. Persson, B. Arnaudov, S.
Tungasmitta et al, Journal of Crystal Growth, 281(1):55-61 (July 15,
2005). [
Abstract ]
·
Los Alamos National
Laboratory / Sandia National Laboratories: "Multicolor
light-emitting diodes based on semiconductor nanocrystals encapsulated in GaN
charge injection layers." A.H. Mueller, M.A. Petruska, M. Achermann,
D.J. Werder, E.A. Akhadov, D.D. Koleske, M.A. Hoffbauer, and V.I. Klimov, Nano
Letters, 5(6):1039-1044 (June 2005). [
Abstract ]
·
Nanyang Technological
University (Singapore): "Growth of AIN films on Si(100) and
Si(111) substrates by reactive magnetron sputtering." J.X. Zhang, H.
Cheng, Y.Z. Chen, A. Uddin, S. Yuan, S.J. Geng, and S. Zhang, Surface &
Coatings Technology, 198(1-3):68-73 (August 1, 2005). [
Abstract ]
·
National Cheng Kung
University (Taiwan) / Epitech Technology Corp (Taiwan): "ESD
engineering of nitride-based LEDs." Y.K. Su, S.J. Chang, S.C. Wei,
S.M. Chen, and W.L. Li, IEEE Transactions on Device and Materials
Reliability, 5(2):277-281 (June 2005). [
Abstract ]
·
National Cheng Kung
University (Taiwan) / Epitech Technology Corp (Taiwan): "Nitride-based
MQW LEDs with multiple GaN-SiN nucleation layers." S.C. Wei, Y.K. Su,
S.J. Chang, S.M. Chen, and W.L. Li, IEEE Transactions on Electron Devices,
52(6):1104-1109 (June 2005). [
Abstract ]
·
National Cheng Kung
University (Taiwan) / National Yunlin University of Science & Technology
(Japan) / National Formosa University (Taiwan): "GaN nanocolumns
formed by inductively coupled plasmas etching." S.C. Hung, Y.K. Su,
S.J. Chang, S.C. Chen, T.H. Fang, and L.W. Ji, Physica E-Low-Dimensional
Systems & Nanostructures, 28(2):115-120 (July 2005). [
Abstract ]
·
National Cheng Kung
University (Taiwan) / South Epitaxy Corp (Taiwan): "Enhanced
output power in GaN-based LEDs with naturally textured surface grown by MOCVD."
C.M. Tsai, J.K. Sheu, W.C. Lai, Y.P. Hsu, P.T. Wang, C.T. Kuo, C.W. Kuo, S.J.
Chang et al, IEEE Electron Device Letters, 26(7):464-466 (July 2005). [
Abstract ]
·
National Chiao Tung
University (Taiwan) / National Cheng Kung University (Taiwan): "Enhancement
in light output of InGaN-based microhole array light-emitting diodes."
T.H. Hsueh, J.K. Shen, H.W. Huang, J.Y. Chu, C.C. Kao, H.C. Kuo, and S.C. Wang,
IEEE Photonics Technology Letters, 17(6):1163-1165 (June 2005). [
Abstract ]
·
National Chung Cheng
University (Taiwan) / Wufeng Institute Technology (Taiwan): "Use
of patterned laser liftoff process and electroplating nickel layer for the
fabrication of vertical-structured GaN-based light-emitting diodes."
S.J. Wang, K.M. Uang, S.L. Chen, Y.C. Yang, S.C. Chang, T.M. Chen, C.H. Chen,
and B.W. Liou, Applied Physics Letters, 87(1):011111 (July 4,
2005). [
Abstract ]
·
National Institute of
Advanced Industrial Science & Technology (Japan): "Reduction
of dislocations in GaN epilayers using templated three-dimensional coherent
nanoislands." K. Jeganathan, M. Shimizu, and H. Okumura, Applied
Physics Letters, 86(19):191908 (May 9, 2005). [
Abstract ]
·
National Institute of
Advanced Industrial Science & Technology (Japan) / Sumitomo Chemical Co Ltd
(Japan) / Nanjing University (China): "Characterizations of GaN
films and GaN/AlN super-lattice structures grown on vicinal sapphire (0001)
substrates by RF-MBE." X.Q. Shen, M. Shimizu, T. Yamamoto, Y. Honda,
and H. Okumura, Journal of Crystal Growth, 278(1-4):378-382 (May 1,
2005). [
Abstract ]
·
National Tsing Hua
University (Taiwan): "Enhancement of the c-axis texture of
aluminum nitride by an inductively coupled plasma reactive sputtering process."
C.M. Yeh, C.H. Chen, J.Y. Gan, C.S. Kou, and J. Hwang, Thin Solid Films,
483(1-2):6-9 (July 1, 2005). [
Abstract ]
·
National Tsing Hua
University (Taiwan) / Chang Gung University (Taiwan) / National Taiwan
University (Taiwan): "AlGaN films grown on (0001)sapphire by a
two-step method." C.F. Shih, N.C. Chen, S.Y. Lin, and K.S. Liu, Applied
Physics Letters, 86(21):211103 (May 23, 2005). [
Abstract ]
·
National University of
Kaohsiung (Taiwan): "Wavelength shift of gallium nitride light
emitting diode with p-down structure." W.H. Lan, IEEE Transactions
on Electron Devices, 52(6):1217-1219 (June 2005). [
Abstract ]
·
North Carolina State
University: "AlN bulk crystals grown on SiC seeds." R.
Dalmau, R. Schlesser, B.J. Rodriguez, R.J. Nemanich, and Z. Sitar, Journal
of Crystal Growth, 281(1):68-74 (July 15, 2005). [
Abstract ]
·
Ohio State University / CFD
Research Corp / ESI CFD Inc.: "Combined ab initio quantum
chemistry and computational fluid dynamics calculations for prediction of
gallium nitride growth." D. Sengupta, S. Mazumder, W. Kuykendall, and
S.A. Lowry, Journal of Crystal Growth, 279(3-4):369-382 (June 1, 2005).
[
Abstract ]
·
Pennsylvania State
University: "In situ observation of coalescence-related tensile
stresses during metalorganic chemical vapor deposition of GaN on sapphire."
S. Raghavan, J. Acord, and J.M. Redwing, Applied Physics Letters,
86(26):261907 (June 27, 2005). [
Abstract ]
·
Polish Academy of Sciences
(Poland): "Control of Mg doping of GaN in RF-plasma molecular beam
epitaxy." A. Feduniewicz, C. Skierbiszewski, M. Siekacz, Z.R.
Wasilewski, I. Sproule, S. Grzanka, R. Jakiela, J. Borysiuk et al, Journal
of Crystal Growth, 278(1-4):443-448 (May 1, 2005). [
Abstract ]
·
Polish Academy of Sciences
(Poland): "Deposition of thick GaN layers by HVPE on the pressure
grown GaN substrates." B. Lucznik, B. Pastuszka, I. Grzegory, M.
Bockowski, G. Kamler, E. Litwin-Staszewska, and S. Porowski, Journal of
Crystal Growth, 281(1):38-46 (July 15, 2005). [
Abstract ]
·
Polish Academy of Sciences
(Poland): "Growth of GaN on patterned GaN/sapphire substrates by
high pressure solution method." M. Bockowski, I. Grzegory, J.
Borysiuk, G. Kamler, B. Lucznik, M. Wroblewski, P. Kwiatkowski, K. Jasik et
al, Journal of Crystal Growth, 281(1):11-16 (July 15, 2005). [
Abstract ]
·
Polish Academy of Sciences
(Poland) / Topgan Ltd (Poland): "Properties of InGaN blue laser
diodes grown on bulk GaN substrates." P. Perlin, T. Suski, M.
Leszczynski, P. Prystawko, T. Swietlik, L. Marona, P. Wisniewski, R. Czernecki et
al, Journal of Crystal Growth, 281(1):107-114 (July 15, 2005). [
Abstract ]
·
Polish Academy of Sciences (Poland)
/ Wroclaw Technical University (Poland): "Synthesis, structure and
optical properties of GaN nanocrystallites." M. Nyk, W. Strek, J.M.
Jablonski, L. Kepinski, R. Kudrawiec, and J. Misiewicz, Materials Science in
Semiconductor Processing, 8(4):511-514 (August 2005). [
Abstract ]
·
Radboud University of
Nijmegen (Netherlands) / Polish Academy of Sciences (Poland): "Defects
in GaN single crystals and homoepitaxial structures." J.L. Weyher, G.
Kamler, G. Nowak, J. Borysiuk, B. Lucznik, M. Krysko, I. Grzegory, and S.
Porowski, Journal of Crystal Growth, 281(1):135-142 (July 15, 2005). [
Abstract ]
·
Saga University (Japan): "Microscopic
investigations of aluminum nitride thin films grown by low-temperature reactive
sputtering." Q.X. Guo, M. Yoshitugu, T. Tanaka, M. Nishio, and H.
Ogawa, Thin Solid Films, 483(1-2):16-20 (July 1, 2005). [
Abstract ]
·
Sandia Natlional
Laboratories: "Using optical reflectance to measure GaN nucleation
layer decomposition kinetics." D.D. Koleske, M.E. Coltrin, and M.J.
Russell, Journal of Crystal Growth, 279(1-2):37-54 (May 15, 2005). [
Abstract ]
·
Semiconductor Technology
Research (STR) Inc / North Crystals Ltd (Russia) / Fox Group Inc: "Sublimation
growth of AlN bulk crystals in Ta crucibles." E.N. Mokhov, O.V.
Avdeev, I.S. Barash, T.Y. Chemekova, A.D. Roenkov, A.S. Segal, A.A. Wolfson,
Y.N. Makarov et al, Journal of Crystal Growth, 281(1):93-100 (July 15,
2005). [
Abstract ]
·
Seoul National University
(South Korea) / Chungbuk National University (South Korea) / Sogang University
(South Korea): "Growth of in-rich InGaN/GaN nanostructures by
metal-organic chemical vapor deposition and their optical properties."
S.Y. Kwon, H.J. Kim, H. Na, Y.W. Kim, H.C. Seo, H.J. Kim, Y. Shin, E. Yoon et
al, Journal of the Korean Physical Society, 46(S):S130-S133 (June 2005).
[No URL available]
·
Seoul National University
(South Korea) / Sogang University (South Korea): "Room temperature
near-ultraviolet emission from In-rich InGaN/GaN multiple quantum wells."
S.Y. Kwon, S.I. Baik, Y.W. Kim, H.J. Kim, D.S. Ko, E. Yoon, J.W. Yoon, H.
Cheong et al, Applied Physics Letters, 86(19):192105 (May 9, 2005). [
Abstract ]
·
Shandong Jiaotong
University (China) / Shandong Normal University (China) / Shandong University
of Technology (China): "Preparation and characterization of GaN
films grown on Ga-diffused Si(111) substrates." Z.C. Sun, W.T. Cao,
Q.Q. Wei, S.Y. Wang, C.S. Xue, and H.B. Sun, Rare Metals, 24(2):194-199
(June 2005). [No
URL available]
·
Shandong Normal University
(China): "Characteristics of GaN film prepared by ammoniating
Ga2O3/Al2O3 deposited on Si(111) substrate ." Q.Q. Wei, C.S. Xue, Z.C.
Sun, H.Z. Zhuang, and S.Y. Wang, Rare Metal Materials and Engineering,
34(5):746-749 (May 2005). [No URL available]
·
Shandong Normal University
(China): "Synthesis of GaN nanorods on Si substrates with
assistance of the volatilization of ZnO middle layers." H.Z. Zhuang,
H.Y. Gao, C.S. Xue, S.Y. Wang, Z.H. Dong, and J.T. He, Rare Metals,
24(2):110-114 (June 2005). [No URL available]
·
Shandong University (China)
/ Forschungzentrum Julich (Germany) / Aixtron AG (Germany): "Terbium
implanted AlN and photoluminescence properties." F. Lu, R. Carius,
A.A. Alam, and M. Heuken, Journal of the Korean Physical Society,
46(S):S48-S51 (June 2005). [No URL available]
·
Shandong University (China)
/ Shandong Institute of Light Industry (China): "Synthesis of GaN
nanospindles via a facile solid-state reaction route." X.P. Hao, H.
Zhan, Y.Z. Wu, S.W. Liu, X.G. Xu, and M.H. Jiang, Journal of Crystal Growth,
280(3-4):341-345 (July 1, 2005). [
Abstract ]
·
Sharp Labs Europe Ltd
(UK): "InGaN laser diodes and high brightness light emitting
diodes grown by molecular beam epitaxy." S.E. Hooper, M. Kauer, V.
Bousquet, K. Johnson, C. Zellweger, and J. Heffernan, Journal of Crystal
Growth, 278(1-4):361-366 (May 1, 2005). [
Abstract ]
·
Stanford University /
University of Texas-Austin: "Using beam.flux monitor as Langmuir
probe for plasma-assisted molecular beam epitaxy." M.A. Wistey, S.R.
Bank, H.B. Yuen, J.S. Harris, M.M. Oye, and A.L. Holmes, Journal of Vacuum
Science & Technology A, 23(3):460-464 (May 2005-June 30, 2005). [
Abstract ]
·
SUNY-Stony Brook / Arizona
State University / North Carolina State University / Georgia Institute of Technology:
"Structural defects and luminescence features in heteroepitaxial
GaN grown on on-axis and misoriented substrates." J. Bai, M. Dudley,
L. Chen, B.J. Skromme, B. Wagner, R.F. Davis, U. Chowdhury, and R.D. Dupuis, Journal
of Applied Physics, 97(11):116101 (June 1, 2005). [
Abstract ]
·
SUNY Stony Brook / Arizona State University / North Carolina State University / Purdue University: "Design
of an RF-heated bulk AlN growth reactor: Induction heating and heat transfer
modeling." B. Wu, V. Noveski, H. Zhang, R. Schlesser, S. Mahajan, S.
Beaudoin, and Z. Sitar, Crystal Growth & Design, 5(4):1491-1498 (July
2005-August 31, 2005). [
Abstract ]
·
SUNY-Stony Brook / Georgia
Institute of Technology: "Epitaxial tilting of GaN grown on
vicinal surfaces of sapphire." X.R. Huang, J. Bai, M. Dudley, R.D.
Dupuis, and U. Chowdhury, Applied Physics Letters, 86(21):211916 (May
23, 2005). [
Abstract ]
·
Technical University of
Ilmenau (Germany): "Effect of nanoscale surface morphology on the
phase stability of 3C-AlN films on Si(111)." V. Lebedev, V. Cimalla,
U. Kaiser, C. Foerster, J. Pezoldt, J. Biskupek, and O. Ambacher, Journal of
Applied Physics, 97(11):114306 (June 1, 2005). [
Abstract ]
·
Technologies & Devices
International Inc: "Thick AlN layers grown by HVPE." O.
Kovalenkov, V. Soukhoveev, V. Ivantsov, A. Usikov, and V. Dmitriev, Journal
of Crystal Growth, 281(1):87-92 (July 15, 2005). [
Abstract ]
·
Teikyo University of
Science & Technology (Japan): "Thick cubic GaN film growth
using ultra-thin low-temperature buffer layer by RF-MBE." R. Kimura,
T. Suzuki, M. Ouchi, K. Ishida, and K. Takahashi, Journal of Crystal Growth,
278(1-4):411-414 (May 1, 2005). [
Abstract ]
·
Tohoku University (Japan) /
Chinese Academy of Sciences (China): "Atomistic study of GaN
surface grown on Si(111)." Z.T. Wang, Y. Yamada-Takamura, Y. Fujikawa,
T. Sakurai, and Q.K. Xue, Applied Physics Letters, 87(3):032110 (July
18, 2005). [
Abstract ]
·
Tokyo Denki University
(Japan): "Synthesis of epitaxial GaN single-crystalline film by
ultra high vacuum r.f. magnetron sputtering method." Y. Daigo and N.
Mutsukura, Thin Solid Films, 483(1-2):38-43 (July 1, 2005). [
Abstract ]
·
Tokyo University of Agriculture & Technology (Japan): "Growth of thick AlN layers
by hydride vapor-phase epitaxy." Y. Kumagai, T. Yamane, and A. Koukitu,
Journal of Crystal Growth, 281(1):62-67 (July 15, 2005). [
Abstract ]
·
Tokyo University of Agriculture & Technology (Japan): "Thermodynamic analysis of
AlGaN HVPE growth." A. Koukitu, J. Kikuchi, Y. Kangawa, and Y. Kumagai,
Journal of Crystal Growth, 281(1):47-54 (July 15, 2005). [
Abstract ]
·
Toshiba Co Ltd (Japan): "Sub-picosecond
all-optical gate utilizing aN intersubband transition." N. Iizuka, K.
Kaneko, and N. Suzuki, Optics Express, 13(10):3835-3840 (May 16, 2005).
[
Abstract ]
·
UNIPRESS (Poland) / Polish
Academy of Sciences (Poland): "Microstructure of InGaN quantum
wells grown on GaN single crystals and sapphire." M. Krysko, R.
Czernecki, P. Prystawko, G. Targowski, S. Grzanka, J. Domagala, I. Grzegory, B.
Lucznik et al, Journal of Physics D-Applied Physics, 38(10a):A89-A92
(May 21, 2005). [
Abstract ]
·
University of Auckland (New
Zealand) / Victoria University of Wellington (New Zealand) / Industrial
Research Ltd (New Zealand) / Australian Nuclear Science & Technology
Organization (Australia): "Characterisation of amorphous GaN films."
J.B. Metson, B.J. Ruck, F. Budde, H.J. Trodahl, A. Bittar, and K.E. Prince, Applied
Surface Science, 244(1-4):264-268 (May 15, 2005). [
Abstract ]
·
University of Bremen
(Germany) / Linkoping University (Sweden): "Optoelectronic devices
on bulk GaN." S. Figge, T. Bottcher, J. Dennemarck, R. Kroger, T.
Paskova, B. Monemar, and D. Hommel, Journal of Crystal Growth,
281(1):101-106 (July 15, 2005). [
Abstract ]
·
University of California-Berkeley: "Defects in p-doped bulk GaN crystals grown
with Ga polarity." Z. Liliental-Weber, T. Tomaszewicz, D. Zakharov,
and M.A. O'keefe, Journal of Crystal Growth, 281(1):125-134 (July 15,
2005). [
Abstract ]
·
University of California-Berkeley / Kitami Institute of Technology (Japan) / Lawrence
Berkeley National Laboratory: "Epitaxial condition and polarity in
GaN grown on a HfN-buffered Si(111) wafer." X. Xu, R. Armitage, S.
Shinkai, K. Sasaki, C. Kisielowski, and E.R. Weber, Applied Physics Letters,
86(18):182104 (May 2, 2005). [
Abstract ]
·
University of California-Santa Barbara: "Molecular-beam epitaxy of p-type
m-plane GaN." M. Mclaurin, T.E. Mates, and J.S. Speck, Applied
Physics Letters, 86(26):262104 (June 27, 2005). [
Abstract ]
·
University of California-Santa Barbara / AF Ioffe Physico-Technico Institute (Russia): "Role
of inclined threading dislocations in stress relaxation in mismatched layers."
P. Cantu, F. Wu, P. Waltereit, S. Keller, A.E. Romanov, S.P. Denbaars, and J.S.
Speck, Journal of Applied Physics, 97(10):1, P.103534 (May 15, 2005). [
Abstract ]
·
University of Crete (Greece) / FORTH (Greece): "Active nitrogen species dependence on
radiofrequency plasma source operating parameters and their role in GaN growth."
E. Iliopoulos, A. Adikimenakis, E. Dimakis, K. Tsagaraki, G. Konstantinidis,
and A. Georgakilas, Journal of Crystal Growth, 278(1-4):426-430 (May 1,
2005). [
Abstract ]
·
University of Crete (Greece) / FORTH (Greece) / Aristotle University of Thessaloniki (Greece): "Correlation
between nucleation, morphology and residual strain of InN grown on Ga-face GaN
(0001)." E. Dimakis, K. Tsagaraki, E. Iliopoulos, P. Komninou, T.
Kehagias, A. Delimitis, and A. Georgakilas, Journal of Crystal Growth,
278(1-4):367-372 (May 1, 2005). [
Abstract ]
·
University of Crete
(Greece) / FORTH (Greece) / Aristotle University of Thessaloniki (Greece): "Heteroepitaxial
growth of In-face InN on GaN (0001) by plasma-assisted molecular-beam epitaxy."
E. Dimakis, E. Iliopoulos, K. Tsagaraki, T. Kehagias, P. Komninou, and A.
Georgakilas, Journal of Applied Physics, 97(11):113520 (June 1, 2005). [
Abstract ]
·
University of Delhi (India)
/ Toyohashi University of Technology (Japan): "Pulsed laser
deposition of epitaxial Al-doped ZnO film on sapphire with GaN buffer layer."
M. Kumar, R.M. Mehra, A. Wakahara, M. Ishida, and A. Yoshida, Thin Solid
Films, 484(1-2):174-183 (July 22, 2005). [
Abstract ]
·
University of Gothenburg
(Sweden) / Chalmers University of Technology (Sweden) / Linkoping University
(Sweden) / National Chiao Tung University (Taiwan): "Influence of
dislocation density on photoluminescence intensity of GaN." J.F.
Falth, M.N. Gurusinghe, X.Y. Liu, T.G. Andersson, I.G. Ivanov, B. Monemar, H.H.
Yao, and S.C. Wang, Journal of Crystal Growth, 278(1-4):406-410 (May 1,
2005). [
Abstract ]
·
University of Gottingen
(Germany): "Reactive laser synthesis of carbides and nitrides."
P. Schaaf, M. Kahle, and E. Carpene, Applied Surface Science,
247(1-4):607-615 (July 15, 2005). [
Abstract ]
·
University of Houston /
National Sun Yat Sen University (Taiwan): "Catalytic nanocapillary
condensation and epitaxial GaN nanorod growth." H.W. Seo, Q.Y. Chen,
L.W. Tu, C.L. Hsiao, M.N. Iliev, and W.K. Chu, Physical Review B,
71(23):235314 (June 2005). [
Abstract ]
·
University of Minnesota: "Fabrication
of multicomponent microsystems by directed three-dimensional self-assembly."
W. Zheng and H.O. Jacobs, Advanced Functional Materials, 15(5):732-738 (May
2005). [
Abstract ]
·
University of Minnesota /
SVT Associates: "Nanostructure formation during ion-assisted
growth of GaN by molecular beam epitaxy." B. Cui, P.I. Cohen, and A.M.
Dabiran, Journal of Applied Physics, 97(10):1, P.104313 (May 15, 2005).
[
Abstract ]
·
University of Montpellier 2
(France) / Polish Academy of Sciences (Poland) / Topgan Ltd (Poland) /
University of Warsaw (Poland): "Influence of dislocation and
ionized impurity scattering on the electron mobility in GaN/AlGaN
heterostructures." W. Knap, C. Skierbiszewski, K. Dybko, J.
Lusakowski, M. Siekacz, I. Grzegory, and S. Porowski, Journal of Crystal
Growth, 281(1):194-201 (July 15, 2005). [
Abstract ]
·
University of New Mexico: "Orientation-dependent
nucleation of GaN on a nanoscale faceted Si surface." S.C. Lee, X.Y.
Sun, S.D. Hersee, and S.R.J. Brueck, Journal of Crystal Growth,
279(3-4):289-292 (June 1, 2005). [
Abstract ]
·
University of Poona (India)
/ National Chemical Laboratory (India): "Deposition of indium
nitride films by activated reactive evaporation process - a feasibility study."
S.J. Patil, D.S. Bodas, A.B. Mandale, and S.A. Gangal, Applied Surface
Science, 245(1-4):73-78 (May 30, 2005). [
Abstract ]
·
University of Pretoria
(South Africa) / University of the Free State (South Africa): "Analysis
of GaN cleaning procedures." M. Diale, F.D. Auret, N.G. Van Der Berg,
R.Q. Odendaal, and W.D. Roos, Applied Surface Science, 246(1-3):279-289
(June 15, 2005). [
Abstract ]
·
University of Shizuoka
(Japan): "Effect of treatments of sapphire substrate on growth of
GaN film." M. Sumiya and S. Fuke, Applied Surface Science,
244(1-4):269-272 (May 15, 2005). [
Abstract ]
·
University of Shizuoka
(Japan): "High growth rate deposition of oriented InN pillar
crystals." K. Takemoto, N. Takahashi, and T. Nakamura, Solid State
Communications, 134(9):617-620 (May 2005). [
Abstract ]
·
University of South
Carolina: "Internal polarization fields in GaN/AlGaN multiple
quantum wells with different crystallographic orientations." E.
Kuokstis, W.H. Sun, C.Q. Chen, J.W. Yang, and M.A. Khan, Journal of
Applied Physics, 97(10):1, P.103719 (May 15, 2005). [
Abstract ]
·
University of Strathclyde
(UK) / ISMRA University of Caen (France) / Toyohashi University of Technology
(Japan): "Photoluminescence studies of Eu-implanted GaN epilayers."
V. Katchkanov, K.P. O'donnell, S. Dalmasso, R.W. Martin, A. Braud, Y. Nakanishi,
A. Wakahara, and A. Yoshida, Physica Status Solidi B-Basic Solid State
Physics, 242(7):1491-1496 (June 2005). [
Abstract ]
·
University of Texas-Austin
/ Stanford University / Samsung Austin Semiconductor / University of
Massachusetts: "Ion damage effects from negative deflector plate
voltages during the plasma-assisted molecular-beam epitaxy growth of dilute
nitrides." M.M. Oye, M.A. Wistey, J.M. Reifsnider, S. Agarwal, T.J.
Mattord, S. Govindaraju, G.A. Hallock, A.L. Holmes et al, Applied Physics
Letters, 86(22):221902 (May 30, 2005). [
Abstract ]
·
University of Tokyo
(Japan): "Fabrication of cubic and hexagonal GaN micro-crystals on
GaAs(001) substrates with relatively thin low-temperature GaN buffer layer."
R. Katayama and K. Onabe, Journal of Crystal Growth, 278(1-4):431-436
(May 1, 2005). [
Abstract ]
·
University of Western
Ontario (Canada) / City University of Hong Kong (China) / Chinese Academy of
Sciences (China) / Argonne National Laboratory: "One-dimensional
zigzag gallium nitride nanostructures." X.T. Zhou, T.K. Sham, Y.Y.
Shan, X.F. Duan, S.T. Lee, and R.A. Rosenberg, Journal of Applied Physics,
97(10):1, P.104315 (May 15, 2005). [
Abstract ]
·
University Rochester: "Studies
of ammonia dissociation during the gas source molecular-beam epitaxial growth
of III nitrides." G.W. Wicks, M.W. Koch, and J.R. Pedrazzani, Journal
of Vacuum Science & Technology B, 23(3):1186-1189 (May 2005-June 30,
2005). [
Abstract ]
·
US Naval Research
Laboratory: "Optical studies of bulk and homoepitaxial films of
III-V nitride semiconductors." J.A. Freitas, Journal of Crystal
Growth, 281(1):168-182 (July 15, 2005). [
Abstract ]
·
Vilnius State University
(Lithuania): "Rate of radiative and nonradiative recombination in
bulk GaN grown by various techniques." S. Jursenas, S. Miasojedovas,
and A. Zukauskas, Journal of Crystal Growth, 281(1):161-167 (July 15,
2005). [
Abstract ]
·
Vilnius State University
(Lithuania) / Polish Academy of Sciences (Poland): "Spontaneous
and stimulated emission in quantum structures grown over bulk GaN and sapphire."
S. Miasojedovas, S. Jursenas, A. Zukauskasa, V.Y. Ivanov, M. Godlewski, M.
Leszczynski, P. Perlin, and T. Suski, Journal of Crystal Growth,
281(1):183-187 (July 15, 2005). [
Abstract ]
·
Virginia Commonwealth
University / Duke University / US Army Research Office: "Increased
carrier lifetimes in GaN epitaxial films grown using SiN and TiN porous network
layers." U. Ozgur, Y. Fu, Y.T. Moon, F. Yun, H. Morkoc, and H.O.
Everitt, Journal of Applied Physics, 97(10):1, P.103704 (May 15, 2005).
[
Abstract ]
·
Virginia Commonwealth
University / Duke University / US Army Research Office / Samsung Advanced
Institute of Technology (South Korea): "Long carrier lifetimes in
GaN epitaxial layers grown using TIN porous network templates." U.
Ozgur, Y. Fu, Y.T. Moon, F. Yun, H. Morkoc, H.O. Everitt, S.S. Park, and K.Y.
Lee, Applied Physics Letters, 86(23):232106 (June 6, 2005). [
Abstract ]
·
Wayne State University: "Excimer
laser modification of thin AlN films." D.G. Georgiev, L.W.
Rosenberger, Y.V. Danylyuk, R.J. Baird, G. Newaz, G. Shreve, and G. Auner, Applied
Surface Science, 249(1-4):45-53 (August 15, 2005). [
Abstract ]
·
Zhejiang University
(China): "Growth and characterization of GaN films on Si(111)
substrate using high-temperature AlN buffer layer ." X.F. Ni, L.P.
Zhu, Z.Z. Ye, Z. Zhao, H.P. Tang, W. Hong, and B.H. Zhao, Surface &
Coatings Technology, 198(1-3):350-353 (August 1, 2005). [
Abstract ]
B. Materials and Device Design Properties
·
AF Ioffe Physico-Technico Institute
(Russia) / Leningrad Nuclear Physics Institute (Russia) / University of
Karlsruhe (Germany): "A gauge invariant approach to the Raman scattering in heavily
doped crystals." A.A. Klochikhin, V.Y. Davydov, V.V. Emtsev, A.N.
Smirnov, and R. Van Baltz, Physica Status Solidi B-Basic Solid State Physics,
242(7):R58-R60 (June 2005). [
Abstract ]
·
Air Force Research
Laboratory / University of Missouri: "Luminous efficiency and the
measurement of daytime displays, signals, and visors." L.K. Harrington,
C.J. Bassi, and C.K. Peck, Aviation Space and Environmental Medicine,
76(5):448-455 (May 2005). [
Abstract ]
·
Arizona State University /
Cornell University: "Observation of large electron drift
velocities in InN by ultrafast Raman spectroscopy." K.T. Tsen, C.
Poweleit, D.K. Ferry, H. Lu, and W.J. Schaff, Applied Physics Letters,
86(22):222103 (May 30, 2005). [
Abstract ]
·
CEA (France) / Vietnamese
Academy of Science & Technology (Vietnam) / NGK Insulators Ltd (Japan) /
University of Grenoble 1 (France): "Eu locations in eu-doped
InGaN/GaN quantum dots." T. Andreev, E. Monroy, B. Gayral, B. Daudin,
N.Q. Liem, Y. Hori, M. Tanaka, O. Oda et al, Applied Physics Letters,
87(2):021906 (July 11, 2005). [
Abstract ]
·
Chang Gung University
(Taiwan) / Nan Ya Photonics Inc (Taiwan): "Cross sections for the
investigation of the electroluminescence excitation of InGaN/GaN quantum wells
in blue light-emitting diodes with multiquantum barriers." T.E. Nee,
J.C. Wang, C.H. Lin, R.M. Lin, C.A. Huang, B.R. Fang, and R.Y. Wang, Journal
of Vacuum Science & Technology B, 23(3):966-969 (May 2005-June 30,
2005). [
Abstract ]
·
Chang Gung University
(Taiwan) / Nan Ya Photonics Inc (Taiwan): "Study of
electroluminescence quenching in the InGaN/GaN blue diode with multi-quantum
barrier structure." R.M. Lin, C.H. Lin, J.C. Wang, T.E. Nee, B.R.
Fang, and R.Y. Wang, Journal of Crystal Growth, 278(1-4):421-425 (May 1,
2005). [
Abstract ]
·
Chiba University (Japan) /
CREST (Japan): "Ultrathin metal layers to convert surface polarity
of nitride semiconductors." T. Nakayama and J. Mikami, Physica
Status Solidi B-Basic Solid State Physics, 242(6):1209-1213 (May 2005). [
Abstract ]
·
Chinese Academy of Sciences
(China): "Investigations on optical properties of AlGaInN
epilayers grown by MOCVD." D.S. Jiang, J.P. Liu, and H. Yang, Journal
of Infrared and Millimeter Waves, 24(3):193-197 (June 2005). [
Abstract ]
·
Chinese Academy of Sciences
(China) / Shandong University (China): "Study on GaN epilayer by
infrared spectroscopic ellipsometry." J. Wang, X.Y. Li, J. Liu, and
Z.M. Huang, Semiconductor Science and Technology, 20(6):540-543 (June
2005). [
Abstract ]
·
CNRS (France): "Photoreflectance
on wide bandgap nitride semiconductors." C. Bru-Chevallier, S.
Fanget, and A. Philippe, Physica Status Solidi a-Applications and Materials
Science, 202(7):1292-1299 (May 2005). [
Abstract ]
·
CRHEA-CNRS (France) /
University of Clermont Ferrand (France): "Strong light-matter
coupling at room temperature in simple geometry GaN microcavities grown on
silicon." F. Semond, I.R. Sellers, F. Natali, D. Byrne, M. Leroux, J. Massies, N.
Ollier, J. Leymarie et al, Applied Physics Letters, 87(2):021102 (July
11, 2005). [
Abstract ]
·
Eye Research Institute /
Massachusetts General Hospital: "Optical characterization of
ultrabright LEDs." J.M. Benavides and R.H. Webb, Applied Optics,
44(19): 4000-4003 (July 1, 2005). [
Abstract ]
·
Gunma University (Japan) /
Sanken Electric Co Ltd (Japan): "Properties of
radio-frequency-sputter-deposited GaN films in a nitrogen/hydrogen mixed gas."
T. Miyazaki, K. Takada, S. Adachi, and K. Ohtsuka, Journal of Applied
Physics, 97(9):093516 (May 1, 2005). [
Abstract ]
·
Gwangju Institute of
Science & Technology (South Korea): "Si delta doping in a GaN
barrier layer of InGaN/GaN multiquantum well for an efficient ultraviolet
light-emitting diode." M.K. Kwon, K. Park, S.H. Baek, J.Y. Kim, and
S.J. Park, Journal of Applied Physics, 97(10):1, P.106109 (May 15,
2005). [
Abstract ]
·
Hanyang University (South
Korea) / Pohang University of Science & Technology (South Korea) /
Sungkyunkwan University (South Korea): "Optical and field emission
properties of thin single-crystalline GaN nanowires." B. Ha, S.H. Seo,
J.H. Cho, C.S. Yoon, J. Yoo, G.C. Yi, C.Y. Park, and C.J. Lee, Journal of
Physical Chemistry B, 109(22):11095-11099 (June 9, 2005). [
Abstract ]
·
Henan Normal University
(China) / Peking University (China): "Localized excitons in
self-assembled InxGa1-xN quantum dots." X.Q. Dai, F.Z. Huang, and J.J.
Shi, Modern Physics Letters B, 19(12):589-598 (May 30, 2005). [
Abstract ]
·
Hokkaido University (Japan)
/ Japan Science & Technology Agency (Japan) / University of Tokyo (Japan):
"Optical diffraction spectroscopy of excitons in uniaxially
strained GaN films." Y. Toda, S. Adachi, Y. Abe, K. Hoshino, and Y.
Arakawa, Physical Review B, 71(19):195315 (May 2005). [
Abstract ]
·
Hosei University (Japan) /
National Institute of Advanced Industrial Science & Technology (Japan): "Nuclear
reaction analysis of carbon-doped GaN: the interstitial carbon as an origin of
yellow luminescence." K. Kuriyama, Y. Mizuki, H. Sano, A. Onoue, M.
Hasegawa, and I. Sakamoto, Solid State Communications, 135(1-2): 99-102
(July 2005). [
Abstract ]
·
Industrial Technology
Research Institute (Taiwan) / National Tsing Hua University (Taiwan): "Spectroscopic
ellipsometry study of wurtzite InN epitaxial films on Si(111) with varied
carrier concentrations." H. Ahn, C.H. Shen, C.L. Wu, and S. Gwo, Applied
Physics Letters, 86(20):201905 (May 16, 2005). [
Abstract ]
·
Institut Preparatoire Des Etudes d Ingenieurs de Sfax (Tunisia) / Faculte des Sciences de Monastir
(Tunisia) / University of Montpellier 2 (France): "Electron
beam-induced current investigation of GaN Schottky diode." A. Matoussi, T. Boufaden, S.
Guermazi, Y. Mlik, B. El Jani, and A. Toureille, Journal of Electronic Materials, 34(7):1059-1064 (July, 2005). [
Abstract ]
·
Institute of Materials
Research & Engineering (Singapore) / National University of Singapore
(Singapore) / MIT: "Investigation of optical properties of
nanoporous GaN films." A.P. Vajpeyi, S. Tripathy, S.J. Chua, and E.A.
Fitzgerald, Physica E-Low-Dimensional Systems & Nanostructures,
28(2):141-149 (July 2005). [
Abstract ]
·
Iwate University (Japan): "Improvement
in the light emission characteristics of CdS: Cu/CdS diodes." H.
Murai, T. Abe, J. Matsuda, H. Sato, S. Chiba, and Y. Kashiwaba, Applied
Surface Science, 244(1-4):351-354 (May 15, 2005). [
Abstract ]
·
Karlstad University
(Sweden) / University of Tokyo (Japan): "Angle-resolved
photoemission from stoichiometric GaN(0001)-1 x 1." S.M. Widstrand,
K.O. Magnusson, L.S.O. Johansson, and M. Oshima, Surface Science,
584(2-3):169-178 (June 20, 2005). [
Abstract ]
·
Kinki University (Japan): "Light-emitting
efficiency tuning of rod-shaped pi conjugated systems by donor and acceptor
groups." Y. Yamaguchi, T. Tanaka, S. Kobayashi, T. Wakamiya, Y.
Matsubara, and Z. Yoshida, Journal of the American Chemical Society, 127(26):9332-9333
(July 6, 2005). [
Abstract ]
·
Kyoto Institute of
Technology (Japan) / Jozef Stefan Institute (Slovenia) / Industrial Technology
Research Institute (Taiwan) / National Taiwan University (Taiwan): "Determination
of thickness and lattice distortion for the individual layer of strained Al0.14Ga0.86N/GaN
superlattice by high-angle annular dark-field scanning transmission electron
microscopy." M. Shiojiri, M. Ceh, S. Sturm, C.C. Chuo, J.T. Hsu, J.R.
Yang, and H. Saijo, Applied Physics Letters, 87(3):031914 (July 18,
2005). [
Abstract ]
·
Meisei University (Japan) /
Brno University of Technology (Czech Republic) / University of Yamanashi
(Japan) / National Institute of Information & Communication Technology
(Japan): "Hooge noise parameter of epitaxial n-GaN on sapphire."
N. Tanuma, M. Tacano, J. Pavelka, S. Hashiguchi, J. Sikula, and T. Matsui, Solid-State
Electronics, 49(6):865-870 (June 2005). [
Abstract ]
·
Nanjing University of
Science & Technology (China) / Nanjing University (China) / Chinese Academy
of Sciences (China): "Microstrain in Al0.22Ga0.78N/GaN
heterostructure studied by X-ray diffraction and scattering." W.S.
Tan, H.L. Cai, X.S. Wu, S.S. Jiang, W.L. Zheng, and Q.J. Jia, Journal of
Alloys and Compounds, 397(1-2):231-235 (July 19, 2005). [
Abstract ]
·
National Changhua
University of Education (China): "Effect of reactive ion
etching-induced defects on the surface band bending of heavily Mg-doped p-type
GaN." Y.J. Lin and Y.L. Chu, Journal of Applied Physics,
97(10):1, P.104904 (May 15, 2005). [
Abstract ]
·
National Changhua
University of Education (Taiwan) / National Taiwan University of Science &
Technology (Taiwan) / Feng Chia University (Taiwan): "Optical and
electrical properties of heavily Mg-doped GaN upon (NH4)(2)S-x treatment."
Y.J. Lin, Y.L. Chu, Y.S. Huang, and H.C. Chang, Applied Physics Letters,
86(20):202107 (May 16, 2005). [
Abstract ]
·
National Institute for
Lasers Plasma & Radiation Physics (Romania) / Pitesti University (Romania)
/ National Institute of Microtechnology (Romania): "Structural and
optical characterization of AlN films grown by pulsed laser deposition."
C. Ristoscu, C. Ducu, G. Socol, F. Craciunoiu, and I.N. Mihailescu, Applied
Surface Science, 248(1-4):411-415 (July 30, 2005). [
Abstract ]
·
National Synchroton
Radiation Research Center (Taiwan) / Max Planck Gesell (Germany) / Sincrotrone
Trieste (Italy) / Technical University of Chemnitz (Germany): "Valence
band discontinuity at the GaN/SiC(0001) heterojunction studied in situ by
synchrotron-radiation photoelectron spectroscopy." C.H. Chen, L.
Aballe, R. Klauser, T.U. Kampen, and K. Horn, Journal of Electron
Spectroscopy and Related Phenomena, 144:425-428 (June 2005). [
Abstract ]
·
National Taiwan University
(Taiwan) / Chung Hua University (Taiwan) / University of Karlsruhe (Germany): "Effects
of silicon doping on the nanostructures of InGaN/GaN quantum wells."
M.K. Chen, Y.C. Cheng, J.Y. Chen, C.M. Wu, C.C. Yang, K.J. Ma, J.R. Yang, and
A. Rosenauer, Journal of Crystal Growth, 279(1-2):55-64 (May 15, 2005).
[
Abstract ]
·
National Taiwan University
(Taiwan) / National Sun Yat Sen University (Taiwan): "Zero-field
spin splitting in modulation-doped AlxGa1-xN/GaN two-dimensional electron
systems." K.S. Cho, T.Y. Huang, H.S. Wang, M.G. Lin, T.M. Chen, C.T.
Liang, Y.F. Chen, and I. Lo, Applied Physics Letters, 86(22):222102 (May
30, 2005). [
Abstract ]
·
National Tsing Hua
University (Taiwan) / National Taiwan Institute of Technology (Taiwan) /
Taichung Healthcare & Management University (Taiwan): "Argon
ion beam voltage in a dual ion beam sputtering system influence on the aluminum
nitride films microstructure." S. Han, H.Y. Chen, and H.C. Shih, Vacuum,
78(2-4):539-543 (May 30, 2005). [
Abstract ]
·
Nippon Telegraph &
Telephone Public Corp (Japan): "Blue-purplish InGaN quantum wells
with shallow depth of exciton localization." T. Akasaka, H. Gotoh, H.
Nakano, and T. Makimoto, Applied Physics Letters, 86(19):191902 (May 9,
2005). [
Abstract ]
·
Northeast Normal University
(China) / Chinese Academy of Sciences (China) / Fisk University: "Ultraviolet
electroluminescence from p-GaN/i-ZnO/n-ZnO heterojunction light-emitting diodes."
H.Y. Xu, Y.C. Liu, Y.X. Liu, C.S. Xu, C.L. Shao, and R. Mu, Applied Physics
B-Lasers and Optics, 80(7):871-874 (June 2005). [
Abstract ]
·
Northern Illinois
University / Northwestern University: "Modeling of electron
mobility in GaN materials." I.M. Abdel-Motaleb and R.Y. Korotkov, Journal
of Applied Physics, 97(9):093715 (May 1, 2005). [
Abstract ]
·
Peking University (China):
"Microstructure evolution of oxidized Ni/Au ohmic contacts to p-GaN
studied by X-ray diffraction." C.Y. Hu, Z.X. Qin, Z.Z. Chen, H. Yang,
K. Wu, Q. Wang, Z.J. Yang, T.J. Yu et al, Materials Science in Semiconductor
Processing, 8(4):515-519 (August 2005). [
Abstract ]
·
Polish Academy of Sciences
(Poland) / University of Magdeburg (Germany) / University of Montpellier 2
(France): "Efficient radiative recombination and potential profile
fluctuations in low-dislocation InGaN/GaN multiple quantum wells on bulk GaN substrates."
G. Franssen, S. Grzanka, R. Czernecki, T. Suski, L. Marona, T. Riemann, J.
Christen, H. Teisseyre et al, Journal of Applied Physics, 97(10):1,
P.103507 (May 15, 2005). [
Abstract ]
·
Rensselaer Polytechnic
Institute / Sensor Electronic Technology Inc / Russian Academy of Sciences
(Russia): "Low-frequency noise of GaN-based ultraviolet
light-emitting diodes." S.L. Rumyantsev, S. Sawyer, M.S. Shur, N.
Pala, Y. Bilenko, J.P. Zhang, X. Hu, A. Lunev et al, Journal of Applied
Physics, 97(12):123107 (June 15, 2005). [
Abstract ]
·
Research Center Julich
(Germany): "Size-dependent photoconductivity in MBE-grown
GaN-nanowires." R. Calarco, M. Marso, T. Richter, A.I. Aykanat, R.
Meijers, A.V. Hart, T. Stoica, and H. Luth, Nano Letters, 5(5):981-984 (May
2005). [
Abstract ]
·
Russian Academy of Sciences
(Russia) / NWO (France) / ESRF (France) / Katholieke University of Leuven
(France): "Microscopic parameters of materials containing GaN/AlN
and InAs/AlAs heterostructures." S.B. Erenburg, N.V. Bausk, L.N.
Mazalov, A.I. Toropov, K.S. Zhuravlev, V.G. Mansurov, T.S. Shamirsaev, W. Bras et
al, Nuclear Instruments & Methods in Physics Research Section a-Accelerators
Spectrometers Detectors and Associated Equipment, 543(1):188-193 (May 1,
2005). [
Abstract ]
·
Sandia National
Laboratories / University of Florida: "Effect of threading
dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers."
S.R. Lee, A.M. West, A.A. Allerman, K.E. Waldrip, D.M. Follstaedt, P.P.
Provencio, D.D. Koleske, and C.R. Abernathy, Applied Physics Letters,
86(24):241904 (June 13, 2005). [
Abstract ]
·
Shanxi Normal University
(China) / Xian Jiaotong University (China): "First-principles
investigation of structure and stability of AlnNm clusters." L. Guo,
H.S. Wu, and Z.H. Jin, International Journal of Quantum Chemistry,
103(3):291-298 (June 5, 2005). [
Abstract ]
·
Soft Impact Ltd (Russia) /
Russian Academy of Sciences (Russia) / Semiconductor Technology Research (STR)
Inc: "Bandgap engineering of electronic and optoelectronic devices
on native AlN and GaN substrates: A modelling insight." V.F. Mymrin,
K.A. Bulashevich, N.I. Podolskaya, and S.Y. Karpov, Journal of Crystal
Growth, 281(1):115-124 (July 15, 2005). [
Abstract ]
·
Southern University /
A&M College: "Density-functional theory band gap of wurtzite
InN." D. Bagayoko and L. Franklin, Journal of Applied Physics,
97(12):123708 (June 15, 2005). [
Abstract ]
·
SRI International / Arizona
State University: "Spin relaxation of electrons and holes in
zinc-blende semiconductors." Z.G. Yu, S. Krishnamurthy, M. Van
Schilfgaarde, and N. Newman, Physical Review B, 71(24):245312 (June
2005). [
Abstract ]
·
Technical University of
Ilmenau (Germany): "An electron mobility model for wurtzite GaN."
F. Schwierz, Solid-State Electronics, 49(6):889-895 (June 2005). [
Abstract ]
·
Technion Israel Institute
of Technology (Israel) / Cyopt Ltd (Israel): "Simulation of x-ray
diffraction profiles in imperfect multilayers by direct wave summation."
S. Zamir, O. Steinberg, U. Tisch, J. Salzman, and E. Zolotoyabko, Journal of
Physics D-Applied Physics, 38(10a):A239-A244 (May 21, 2005). [
Abstract ]
·
Technion Israel Institute
of Technology (Israel) / University of California-Santa Barbara: "Optical
evidence for lack of polarization in (1120) oriented GaN/(AlGa)N quantum
structures." N. Akopian, G. Bahir, D. Gershoni, M.D. Craven, J.S. Speck,
and S.P. Denbaars, Applied Physics Letters, 86(20):202104 (May 16,
2005). [
Abstract ]
·
University Complutense de
Madrid (Spain) / Moldavian Academy of Sciences (Moldova) / Technical University
of Moldova (Moldova): "Spatially resolved cathodoluminescence of
GaN nanostructures fabricated by photoelectrochemical etching." C. Diaz-Guerra, J. Piqueras,
V. Popa, A. Cojocaru, and I.M. Tiginyanu, Applied Physics Letters,
86(22):223103 (May 30, 2005). [
Abstract ]
·
University of Bath (UK) /
University of Sheffield (UK): "Nature of acceptor states in
magnesium-doped gallium nitride." G.N. Aliev, S. Zeng, J.J. Davies, D.
Wolverson, S.J. Bingham, P.J. Parbrook, and T. Wang, Physical Review B,
71(19):195204 (May 2005). [
Abstract ]
·
University of
California-Berkeley / Lawrence Berkeley National Laboratory: "Nanometer-scale
optical imaging of epitaxially grown GaN and InN islands using apertureless
near-field microscopy." Z.H. Kim, B. Liu, and S.R. Leone, Journal
of Physical Chemistry B, 109(17):8503-8508 (May 5, 2005). [
Abstract ]
·
University of
California-Irvine: "An electrical model with junction temperature
for light-emitting diodes and the impact on conversion efficiency." J.
Park and C.C. Lee, IEEE Electron Device Letters, 26(5):308-310 (May 2005).
[
Abstract ]
·
University of
California-San Diego / Veeco Turbodisc Operations: "Observation of
In concentration variations in InGaN/GaN quantum-well heterostructures by
scanning capacitance microscopy." X. Zhou, E.T. Yu, D.I. Florescu,
J.C. Ramer, D.S. Lee, S.M. Ting, and E.A. Armour, Applied Physics Letters,
86(20):202113 (May 16, 2005). [
Abstract ]
·
University of Cambridge
(UK): "In-plane imperfections in GaN studied by x-ray diffraction."
M.E. Vickers, M.J. Kappers, R. Datta, C. Mcaleese, T.M. Smeeton, F.D.G.
Rayment, and C.J. Humphreys, Journal of Physics D-Applied Physics,
38(10a):A99-A104 (May 21, 2005). [
Abstract ]
·
University of Chittagong
(Bangladesh) / Nagoya University (Japan): "Deep level studies of
GaN by deep level transient spectroscopy." S.L. Saha, M.R.H. Khan, and
N. Sawaki, Indian Journal of Physics and Proceedings of the Indian
Association for the Cultivation of Science, 79(5):491-495 (May 2005). [No
URL available]
·
University of Complutense
de Madrid (Spain): "High-frequency modeling of GaN/SiC blue
light-emitting diodes." P. Antoranz, J.M. Miranda, J.L. Sebastian, M.
Camara, and V. Fonseca, Journal of Applied Physics, 97(9):096107 (May 1,
2005). [
Abstract ]
·
University of Electronic
Science & Technology China / Chinese Academy of Sciences (China): "Back-to-back
Schottky diode adopted for the measurement of GaN films and its Schottky
contacts." Q. Luo, J.F. Du, M.H. Yang, L.C. Wang, T. Jin, and Q. Yu, Semiconductor
Science and Technology, 20(6):606-610 (June 2005). [
Abstract ]
·
University of Gothenburg
(Sweden) / LightLab AB (Sweden): "Some silicon-based
heterostructures for optical applications." M. Willander, Q.X. Zhao,
O. Nur, and Q.H. Hu, Journal of Electronic Materials, 34(5):515-521 (May
2005). [
Abstract ]
·
University of Hong Kong
(China) / Sichuan University (China): "Micro-Raman and
photoluminescence studies of neutron-irradiated gallium nitride epilayers."
R.X. Wang, S.J. Xu, S. Fung, C.D. Beling, K. Wang, S. Li, Z.F. Wei, T.J. Zhou et
al, Applied Physics Letters, 87(3):031906 (July 18, 2005). [
Abstract ]
·
University of Karlsruhe
(Germany) / University of Bremen (Germany) / Technical University of Berlin
(Germany): "Indium redistribution in an InGaN quantum well induced
by electron-beam irradiation in a transmission electron microscope."
T. Li, E. Hahn, D. Gerthsen, A. Rosenauer, A. Strittmatter, L. Reissmann, and
D. Bimberg, Applied Physics Letters, 86(24):241911 (June 13, 2005). [
Abstract ]
·
T&MU University of
London Imperial College of Science: "Optical coherence of planar
microcavity emission." R.F. Oulton, P.N. Stavrinou, and G. Parry, Applied
Physics B-Lasers and Optics, 80(7):817-821 (June 2005). [
Abstract ]
·
University of Montpellier 2
(France): "Ultraviolet surface-emitted second-harmonic generation
in GaN one-dimensional photonic crystal slabs." J. Torres, M.L.
D'yerville, D. Coquillat, E. Centeno, and J.P. Albert, Physical Review B,
71(19):195326 (May 2005). [
Abstract ]
·
University of Munster
(Germany) / Istituto Nazionale di Fisica Nucleare (Italy) / ISI (Italy) /
Politecnical University of Turin (Italy): "Pure dephasing and
phonon dynamics in GaAs- and GaN-based quantum dot structures: Interplay
between material parameters and geometry." B. Krummheuer, V.M. Axt, T.
Kuhn, I. D'amico, and F. Rossi, Physical Review B, 71(23):235329 (June
2005). [
Abstract ]
·
University of New Mexico /
Brown University: "Nanoheteroepitaxial growth of GaN on Si
nanopillar arrays." S.D. Hersee, X.Y. Sun, X. Wang, M.N. Fairchild, J.
Liang, and J. Xu, Journal of Applied Physics, 97(12):124308 (June 15,
2005). [
Abstract ]
·
University of Science & Technology China: "The first principle study on the atomic and electronic structure of GaN(10(1)over-bar0) surface." Y.H. Li, P.S.
Xu, H.B. Pan, and F.Q. Xu, Journal of Electron Spectroscopy and Related Phenomena, 144:597-600 (June 2005). [
Abstract ]
·
University of Sidi Bel-abbe's (Algeria): "Full potential linearized augmented plane
wave calculations of positronic and electronic charge densities of zinc-blende
AlN, InN and their alloy Al0.5In0.5N." Z. Bousahla, B. Abbar, B.
Bouhafs, and A. Tadjer, Journal of Solid State Chemistry,
178(6):2117-2127 (June 2005). [
Abstract ]
·
University of Tabriz (Iran)
/ UMIST (UK) / University of Cambridge (UK) / Thomas Swan Scientific Equipment
Ltd (UK): "Optical and microstructural studies of InGaN/GaN
single-quantum-well structures." D.M. Graham, A. Soltani-Vala, P.
Dawson, M.J. Godfrey, T.M. Smeeton, J.S. Barnard, M.J. Kappers, C.J. Humphreys et
al, Journal of Applied Physics, 97(10):1, P.103508 (May 15, 2005). [
Abstract ]
·
University of Valencia
(Spain) / INFM (Italy) / University of Florence (Italy) / University of
Florence (Italy) / CEA (France): "Reduction of the internal
electric field in wurtzite a-plane GaN self-assembled quantum dots."
N. Garro, A. Cros, J.A. Budagosky, A. Cantarero, A. Vinattieri, M. Gurioli, S.
Founta, H. Mariette et al, Applied Physics Letters, 87(1):011101 (July
4, 2005). [
Abstract ]
·
US Air Force Institute of
Technology / University of Dayton / Kangweon National University (South
Korea): "Radiation-induced electron traps in Al0.14Ga0.86N by 1
MeV electron radiation." M.R. Hogsed, Y.K. Yeo, M. Ahoujja, M.Y. Ryu,
J.C. Petrosky, and R.L. Hengehold, Applied Physics Letters,
86(26):261906 (June 27, 2005). [
Abstract ]
·
US Naval Research
Laboratory / Crystal IS Inc / Palo Alto Research Center: "Depth-resolved
cathodoluminescence of a homoepitaxial AlN thin film." E. Silveira,
J.A. Freitas, G.A. Slack, L.J. Schowalter, M. Kneissl, D.W. Treat, and N.M.
Johnson, Journal of Crystal Growth, 281(1):188-193 (July 15, 2005). [
Abstract ]
·
Vilnius University
(Lithuania) / University of Glasgow (UK): "Characterization of
as-grown and heavily irradiated GaN epitaxial structures by photoconductivity
and photoluminescence." E. Gaubas, S. Jursenas, R. Tomasiunas, J.
Vaitkus, A. Zukauskas, A. Blue, M. Rahman, and K.M. Smith, Nuclear
Instruments & Methods in Physics Research Section a-Accelerators
Spectrometers Detectors and Associated Equipment, 546(1-2):247-251 (July 1,
2005). [
Abstract ]
·
Washington State University
/ Pacific Northwest National Laboratory: "Probing the electronic
structure of mono-nitrogen doped aluminum clusters using anion photoelectron
spectroscopy." X. Li and L.S. Wang, European Physical Journal D,
34(1-3):9-14 (July 2005). [
Abstract ]
·
Wright State University /
US Air Force Research Laboratory: "Identification of donors,
acceptors, and traps in bulk-like HVPE GaN." D.C. Look, Z.Q. Fang, and
B. Claflin, Journal of Crystal Growth, 281(1):143-150 (July 15, 2005). [
Abstract ]
·
Xiamen University (China) /
Lumilog (France): "High-spatial-resolution strain measurements by
Auger electron spectroscopy in epitaxial-lateral-overgrowth GaN." D.J.
Cai, F.C. Xu, J.Y. Kang, P. Gibart, and B. Beaumont, Applied Physics Letters,
86(21):211917 (May 23, 2005). [
Abstract ]
·
Yamaguchi University
(Japan): "Thickness dependence of In content of InGaN mixed films
by high-resolution Rutherford backscattering spectrometry." H. Sakuta,
Y. Yamanaka, S. Kurai, and T. Taguchi, Nuclear Instruments & Methods in
Physics Research Section B-Beam Interactions With Materials and Atoms,
232:295-298 (May 2005). [
Abstract ]
·
Yarmouk University (Jordan)
/ Fritz Haber Institute of Max Planck Gesellschaft (Germany) / University of
Gesamthsch Paderborn (Germany): "Exact-exchange calculations of
the electronic structure of AlN, GaN and InN." A. Qteish, A.I.
Al-Sharif, M. Fuchs, M. Scheffler, S. Boeck, and J. Neugebauer, Computer
Physics Communications, 169(1-3):28-31 (July 1, 2005). [
Abstract ]
C. Packaging and Reliability
·
Eindhoven University of Technology
(Netherlands): "Luminescence
properties of Eu2+-activated alkaline-earth silicon-oxynitride MSi2O2-delta
N2+2/3 delta (M = Ca, Sr, Ba): A promising class of novel LED conversion
phosphors." Y.Q. Li, A.C.A. Delsing, G. De With, and H.T. Hintzen, Chemistry
of Materials, 17(12):3242-3248 (June 14, 2005). [
Abstract ]
·
Gwangju Institute of
Science & Technology (South Korea) / Sunchon National University (South
Korea) / Samsung Advanced Institute of Technology (South Korea): "Improvement
of the light output of InGaN-based light-emitting diodes using Cu-doped indium
oxide/indium tin oxide p-type electrodes." J.O. Song, J.S. Kwak, Y.
Park, and T.Y. Seong, Applied Physics Letters, 86(21):213505 (May 23,
2005). [
Abstract ]
·
Hokkaido University
(Japan): "Electrochemical processes for formation, processing and
gate control of III-V semiconductor nanostructures." H. Hasegawa and
T. Sato, Electrochimica Acta, 50(15):3015-3027 (May 20, 2005). [
Abstract ]
·
Korea Research Institute
Chemical Technology (South Korea): "Investigation of strontium
silicate yellow phosphors for white light emitting diodes from a combinatorial
chemistry." J.K. Park, K.J. Choi, K.N. Kim, and C.H. Kim, Applied
Physics Letters, 87(3):031108 (July 18, 2005). [
Abstract ]
·
National Central University
(Taiwan): "Analysis of position-dependent light extraction of
GaN-based LEDs." T.X. Lee, C.Y. Lin, S.H. Ma, and C.C. Sun, Optics
Express, 13(11):4175-4179 (May 30, 2005). [
Abstract ]
·
National Cheng Kung
University (Taiwan) / South Epitaxy Corp (Taiwan): "Nitride-based
flip-chip ITO LEDs." S.J. Chang, C.S. Chang, Y.K. Su, C.T. Lee, W.S.
Chen, C.F. Shen, Y.P. Hsu, S.C. Shei et al, IEEE Transactions on Advanced
Packaging, 28(2):273-277 (May 2005). [
Abstract ]
·
National Chung Hsing
University (Taiwan): "GaN-based light-emitting diodes with indium
tin oxide texturing window layers using natural lithography." R.H.
Horng, C.C. Yang, J.Y. Wu, S.H. Huang, C.E. Lee, and D.S. Wuu, Applied
Physics Letters, 86(22):221101 (May 30, 2005). [
Abstract ]
·
National Institute of
Advanced Industrial Science & Technology (Japan): "Long-term accelerated
current operation of white light-emitting diodes." T. Yanagisawa and
T. Kojima, Journal of Luminescence, 114(1):39-42 (July 2005). [
Abstract ]
·
NIMS (Japan): "Characterization
and properties of green-emitting beta-SiAlON: Eu2+ powder phosphors for white
light-emitting diodes." N. Hirosaki, R.J. Xie, K. Kimoto, T.
Sekiguchi, Y. Yamamoto, T. Suehiro, and M. Mitomo, Applied Physics Letters,
86(21):211905 (May 23, 2005). [
Abstract ]
·
NIMS (Japan) / Tokyo
University of Technology (Japan): "Strong green emission from
alpha-SiAlON activated by divalent ytterbimn under blue light irradiation."
R.J. Xie, N. Hirosaki, M. Mitomo, K. Uheda, T. Suehiro, X. Xu, Y. Yamamoto, and
T. Sekiguchi, Journal of Physical Chemistry B, 109(19):9490-9494 (May
19, 2005). [
Abstract ]
·
Oxford Lasers Ltd (UK) /
University of Strathclyde (UK): "Impact of laser scribing for
efficient device separation of LED components." E.K. Illy, M. Knowles,
E. Gu, and M.D. Dawson, Applied Surface Science, 249(1-4):354-361
(August 15, 2005). [
Abstract ]
·
Pennsylvania State
University / Nitronex Corp: "Thermal stability of metallizations
on GaN/AlxGa1-xN/GaN heterostructures." E.D. Readinger, J.A. Robinson,
S.E. Mohney, and R. Therrien, Semiconductor Science and Technology,
20(5):389-397 (May 2005). [
Abstract ]
·
Pukyong National University
(South Korea) / Yonsei University (South Korea): "Full-color
Ba3MgSi2O8: Eu2+, Mn2+ phosphors for white-light-emitting diodes."
J.S. Kim, K.T. Lim, Y.S. Jeong, P.E. Jeon, J.C. Choi, and H.L. Park, Solid
State Communications, 135(1-2):21-24 (July 2005). [
Abstract ]
·
Rensselaer Polytechnic
Institute: "Extracting phosphor-scattered photons to improve white
LED efficiency." N. Narendran, Y. Gu, J.P. Freyssinier-Nova, and Y.
Zhu, Physica Status Solidi a-Applications and Materials Science,
202(6):R60-R62 (May 2005). [
Abstract ]
·
Rensselaer Polytechnic
Institute / Samsung Advanced Institute of Technology (South Korea): "Analysis
of high-power packages for phosphor-based white-light-emitting diodes."
H. Luo, J.K. Kim, E.F. Schubert, J. Cho, C. Sone, and Y. Park, Applied
Physics Letters, 86(24):243505 (June 13, 2005). [
Abstract ]
·
Sun Yat Sen University
(China): "Three-band white light from InGaN-based blue LED chip
precoated with green/red phosphors." H. Wu, X.M. Zhang, C.F. Guo, R.
Xu, M.M. Wu, and Q. Su, IEEE Photonics Technology Letters,
17(6):1160-1162 (June 2005). [
Abstract ]
·
Technological University
(Singapore) / Chalmers University of Technology (Sweden): "Study
of degradation mechanism of blue light emitting diodes." A. Uddin,
A.C. Wei, and T.G. Andersson, Thin Solid Films, 483(1-2):378-381 (July
1, 2005). [
Abstract ]
·
Tsing Hua University
(China): "Far-field pattern simulation of flip-chip bonded power
light-emitting diodes by a Monte Carlo photon-tracing method." F. Hu,
K.Y. Qian, and Y. Luo, Applied Optics, 44(14):2768-2771 (May 10, 2005).
[
Abstract ]
·
University of Mysore
(India): "Study of the electrical, structural and surface
morphological characteristics of Pt/Re/Au ohmic contacts on p-type GaN."
V.R. Reddy, Materials Chemistry and Physics, 93(2-3):286-290 (October
15, 2005). [
Abstract ]
·
University of
Pennsylvania: "Focused-ion-beam platinum nanopatterning for GaN
nanowires: Ohmic contacts and patterned growth." C.Y. Nam, J.Y. Kim,
and J.E. Fischer, Applied Physics Letters, 86(19):193112 (May 9, 2005). [
Abstract ]
·
University of South
Carolina: "Thermal analysis of flip-chip packaged 280 nm
nitride-based deep ultraviolet light-emitting diodes." M. Shatalov, A.
Chitnis, P. Yadav, M.F. Hasan, J. Khan, V. Adivarahan, H.P. Maruska, W.H. Sun et
al, Applied Physics Letters, 86(20):201109 (May 16, 2005). [
Abstract ]
·
University of Tokyo (Japan)
/ Sumitomo Chemical Co Ltd (Japan): "Photoemission study on
interfacial reaction of Ti/n-type GaN." T. Naono, J. Okabayashi, S.
Toyoda, H. Fujioka, M. Oshima, and H. Hamamatsu, Applied Surface Science,
244(1-4):277-280 (May 15, 2005). [
Abstract ]
D. Other LED Lighting
·
Forschungszentrum Rossendorf EV (Germany) / Nanoparc Gesellsch Beschrankter Haftung GmbH (Germany): "Bright green
electroluminescence from Tb3+ in silicon metal-oxide-semiconductor devices."
J.M. Sun, W. Skorupa, T. Dekorsy, M. Helm, L. Rebohle, and T. Gebel, Journal
of Applied Physics, 97(12):123513 (June 15, 2005). [
Abstract ]
·
Gwangju Institute of
Science & Technology (South Korea): "Low-resistance and highly
transparent Ni/indium-tin oxide ohmic contacts to phosphorous-doped p-type ZnO."
S.H. Kang, D.K. Hwang, and S.J. Park, Applied Physics Letters,
86(21):211902 (May 23, 2005). [
Abstract ]
·
Gwangju Institute of
Science & Technology (South Korea): "p-ZnO/n-GaN
heterostructure ZnO light-emitting diodes." D.K. Hwang, S.H. Kang,
J.H. Lim, E.J. Yang, J.Y. Oh, J.H. Yang, and S.J. Park, Applied Physics
Letters, 86(22):222101 (May 30, 2005). [
Abstract ]
·
Institute of Physics
(China): "Exploring extreme particle density and size for blue photoluminescence
from as-deposited amorphous Si-in-SiNx films." C. Liu, C.R. Li, A.L.
Ji, L.B. Ma, Y.Q. Wang, and Z.X. Cao, Applied Physics Letters,
86(22):223111 (May 30, 2005). [
Abstract ]
·
Institute of Physics
(China): "Intense blue photoluminescence from Si-in-SiNx thin film
with high-density nanoparticles." C. Liu, C.R. Li, A.L. Ji, L.B. Ma,
Y.Q. Wang, and Z.X. Cao, Nanotechnology, 16(6):940-943 (June 2005). [
Abstract ]
·
Nanchang University
(China): "Influence of nitrogen annealing on structural and
photoluminescent properties of ZnO thin film grown on c-Al2O3 by atmospheric
pressure MOCVD." Y.F. Chen, Y. Pu, L. Wang, C.L. Mo, W.Q. Fang, B.C.
Xiong, and F.Y. Jiang, Materials Science in Semiconductor Processing,
8(4):491-496 (August 2005). [
Abstract ]
·
Nanyang Technological
University (Singapore): "Fabrication of n-ZnO: Al/p-SiC(4H)
heterojunction light-emitting diodes by filtered cathodic vacuum arc technique."
C. Yuen, S.F. Yu, S.P. Lau, Rusli, and T.P. Chen, Applied Physics Letters,
86(24):241111 (June 13, 2005). [
Abstract ]
·
National Taiwan University
(Taiwan): "Electroluminescence from metal/oxide/strained-Si
tunneling diodes." M.H. Liao, M.J. Chen, T.C. Chen, P.L. Wang, and
C.W. Liu, Applied Physics Letters, 86(22):223502 (May 30, 2005). [
Abstract ]
·
National Tsing Hua
University (Taiwan): "Synthesis of blue-light-emitting Si1-xGex
oxide nanowires." J.H. He, W.W. Wu, S.W. Lee, L.J. Chen, Y.L. Chueh,
and L.J. Chou, Applied Physics Letters, 86(26):263109 (June 27, 2005). [
Abstract ]
·
Pennsylvania State
University: "Beryllium chalcogenide alloys for visible light
emitting and laser diodes." O. Maksimov, Reviews on Advanced
Materials Science, 9(2):178-183 (June 2005). [No URL available]
·
University of Surrey (UK):
"Silicon-based light emitting devices." M.A. Lourenco, M.
Milosavljevic, S. Galata, M.S.A. Siddiqui, G. Shao, R.M. Gwilliam, and K.P.
Homewood, Vacuum, 78(2-4):551-556 (May 30, 2005). [
Abstract ]
E. Review Articles
·
Carnegie Mellon University
/ Palo Alto Research Center: "Recent developments in surface
studies of GaN and AlN." R.M. Feenstra, Y. Dong, C.D. Lee, and J.E. Northrup,
Journal of Vacuum Science & Technology B, 23(3):1174-1180 (May
2005-June 30, 2005). [
Abstract ]
·
Linkoping University
(Sweden) / Infineon Technology SC300 GmbH & Co OHG (Germany): "Optical
properties of InN - the bandgap question." B. Monemar, P.P. Paskov,
and A. Kasic, Superlattices and Microstructures, 38(1):38-56 (July
2005). [
Abstract ]
·
Rensselaer Polytechnic
Institute: "Solid-state light sources getting smart."
E.F. Schubert and J.K. Kim, Science, 308(5726):1274-1278 (May 27, 2005). [
Abstract
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