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ISSUE 27: SCIENTIFIC LITERATURE (Mid February 2005 to Mid May 2005) |
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From the Technical Literature The material in this section is selected from scientific and technical papers that became available during the reporting time period. Links to online abstracts are provided. Most online abstracts are freely accessible to the public. A few require journal subscriptions or memberships, and are noted as such. The technical literature section is roughly organized by subject area and, within subjects, alphabetically by institution of the lead author. Use the links below to go directly to a section. A. Materials and Device Fabrication B. Materials and Device Design Properties A. Materials and Device Fabrication
·
Abdus Salam International Centre for Theoretical Physics (Italy) / University of Sido Bel Abbes (Algeria) / ENSICAEN (France): "Ordering effects on the electronic
structures of AlN/GaN, InN/GaN and InN/AlN superlattices." A. Lakdja, B. Bouhafs, and P. Ruterana, Computational Materials Science,
33(1-3):157-162 (2005). [
Abstract ]
·
Arizona State University: "Epitaxial
growth of ZrB2(0001) on Si(111) for III-nitride applications: A review."
J. Tolle, J. Kouvetakis, D.W. Kim, S. Mahajan, A.V.G. Chizmeshya, C.W. Hu, A.
Bell, F.A. Ponce et al, Chinese Journal of Physics, 43(1):2, P.233-248
(February 2005). [
Abstract ]
·
Bulgarian Academy of Sciences (Bulgaria) / Technological Institute of Aeronautics (Brazil) / FZR
(Germany) / Paisii Hilendarski University of Plovdiv (Bulgaria): "AlN films obtained by a broad energy nitrogen ion implantation and rapid thermal
annealing process." K.G. Grigorov, I. Nedkov, G. Beshkov, C. Angelov, H.S. Maciel, W. Matz, R. Groetzchel, and N. Velchev, Journal of
Optoelectronics and Advanced Materials, 7(1):381-384 (February 2005). [
Abstract ]
·
Carnegie Mellon University/ Virginia Commonwealth University: "Effects of hydrogen on the
morphology and electrical properties of GaN grown by plasma-assisted
molecular-beam epitaxy." Y. Dong, R.M. Feenstra, D.W. Greve, J.C.
Moore, M.D. Sievert, and A.A. Baski, Applied Physics Letters,
86(12):121914 (March 21, 2005). [
Abstract ]
·
Chang Gung University (Taiwan) / National Tsing Hua University (Taiwan): "Blue, green
and white InGaN light-emitting diodes grown on Si." C.F. Shih, N.C.
Chen, C.A. Chang, and K.S. Liu, Japanese Journal of Applied Physics Part
2-Letters & Express Letters, 44(1-7):L140-L143 (2005). [
Abstract ]
·
Chinese Academy of Sciences (China): "Design of the low-temperature AlN interlayer for GaN grown on Si(111) substrate." G.W. Cong, Y. Lu, W.Q. Peng, X.L. Liu,
X.H. Wang, and Z.G. Wang, Journal of Crystal Growth, 276(3-4):381-388(April 1, 2005). [
Abstract ]
·
Chinese Academy of Sciences(China): "Effects of different modified underlayer surfaces on
growth and optical properties of InGaN quantum dots." X.X. Han, J.M.
Li, J.J. Wu, X.H. Wang, D.B. Li, X.L. Liu, P.D. Han, Q.S. Zhu et al, Vacuum,
77(3):307-314 (February 18, 2005). [
Abstract ]
·
Chinese Academy of Sciences(China): "The growth of gamma-LiAlO2 layer with a highly-preferred
orientation on (0001) sapphire." S.Z. Li, W.Q. Yang, S.M. Zhou, and J.
Xu, Science in China Series E-Engineering & Materials Science,
48(1):116-120 (February 2005). [No URL available]
·
Chinese Academy of Sciences(China): "Highly-oriented AlN thin films on Si(100) substrates by
pulsed laser deposition." X. Zhang, T.L. Chen, and X.M. Li, Journal
of Inorganic Materials, 20(2):419-424 (March 2005). [No URL available]
·
Chinese Academy of Sciences
(China): "Low-temperature growth of InN by MOCVD and its
characterization." Y. Huang, H. Wang, Q. Sun, J. Chen, D.Y. Li, Y.T.
Wang, and H. Yang, Journal of Crystal Growth, 276(1-2):13-18 (March 15,
2005). [
Abstract ]
·
Chonbuk National University
(South Korea): "Effects of growth variables on structural and
optical properties of InGaN/GaN triangular-shaped quantum wells." R.J.
Choi, E.K. Suh, H.J. Lee, and Y.B. Hahn, Korean Journal of Chemical
Engineering, 22(2):298-302 (March 2005). [
Abstract ]
·
Chonbuk National University
(South Korea) / Korea Advanced Institute of Science & Technology (South
Korea) / Korea Research Institute of Standards & Science (South Korea): "Lifetime
enhancement of the exciton in a trapezoidal-type InGaN/GaN multi-quantum well
structure." K. Kim, J.Y. Lee, and S.C. Jeoung, Thin Solid Films,
478(1-2):286-292 (May 1, 2005). [
Abstract ]
·
Chonnam National University
(South Korea) / University of California-Berkeley: "Gallium
nitride nanowires with a metal initiated metal-organic chemical vapor
deposition (MOCVD) approach." S.K. Lee, H.J. Choi, P. Pauzauskie, P.D.
Yang, N.K. Cho, H.D. Park, E.K. Suh, K.Y. Lim et al, Physica Status Solidi
B-Basic Solid State Physics, 242(3):763-763 (March 2005). [
Abstract ]
·
CNRS (France): "Surface
morphology of AlN and size dispersion of GaN quantum dots." A.
Matsuse, N. Grandjean, B. Damilano, and J. Massies, Journal of Crystal
Growth, 274(3-4):387-393 (February 1, 2005). [
Abstract ]
·
Dongguk University (South
Korea) / Wuhan University (China): "Formation of hexagonal GaN
pyramids by photo assisted electroless chemical etching." D. Fu, Y.S.
Park, G.N. Panin, and T.W. Kang, Japanese Journal of Applied Physics Part
2-Letters & Express Letters, 44(8-11):L342-L344 (2005). [
Abstract ]
·
Ecole Polytech Federale de
Lausanne (Switzerland): "Characterization of deep levels in n-GaN
by combined capacitance transient techniques." M.A. Py, C. Zellweger,
V. Wagner, J.F. Carlin, H.J. Buehlmann, and M. Ilegems, Physica Status
Solidi A-Applications and Materials Science, 202(4):572-577 (March 2005). [
Abstract ]
·
ETH (Switzerland): "AlxGa1-xN
bulk single crystals." P. Geiser, J. Jun, S.M. Kazakov, P. Wagli, J.
Karpinski, B. Batlogg, and L. Klemm, Applied Physics Letters,
86(8):081908 (February 21, 2005). [
Abstract ]
·
Feng Chia University
(Taiwan): "Properties of LT-AlGaN films and HT-GaN films using
LT-AlGaN buffer layers grown on (0001) sapphire substrates." C.L. Wang
and J.R. Gong, Journal of Materials Science-Materials in Electronics,
16(2):107-110 (February 2005). [
Abstract ]
·
Hanyang University South
Korea) / Dongguk University (South Korea) / University of California- Los
Angeles / Russian Academy of Sciences (Russia): "Microstructural
and optical properties of self-organized GaN quantum-dot assemblies."
G.N. Panin, Y.S. Park, T.W. Kang, T.W. Kim, K.L. Wang, and M. Bao, Journal
of Applied Physics, 97(4):043527 (February 15, 2005). [
Abstract ]
·
Harbin Institute of
Technology (China): "The morphology and optical characterizations
of AlGaN/GaN based on Al2O3 prepared by MOCVD." M.C. Li, L.C. Zhao,
and H.M. Li, PRICM 5: the Fifth Pacific Rim International Conference on
Advanced Materials and Processing, Pts 1-5, 475-479(1-5):3713-3716 (2005). [Paper
previews available
here ]
·
Hong Kong University of
Science & Technology (China): "Comparison of blue and green
InGaN/GaN multiple-quantum-well light-emitting diodes grown by metalorganic
vapor phase epitaxy." Y.D. Qi, H. Liang, D. Wang, D. Lu, W. Tang, and
K.M. Lau, Applied Physics Letters, 86(10):101903 (March 7, 2005). [
Abstract ]
·
Hong Kong University of
Science & Technology (China) / Rhein Westfal Th (Germany) / Aixtron AG
(Germany): "Micro-Raman-scattering study of stress distribution in
GaN films grown on patterned Si(111) by metal-organic chemical-vapor deposition."
D. Wang, S. Jia, K.J. Chen, K.M. Lau, Y. Dikme, P. Van Gemmern, Y.C. Lin, H.
Kalisch et al, Journal of Applied Physics, 97(5):056103 (March 1, 2005).
[
Abstract ]
·
I-Shou University (Taiwan)
/ National Chiao Tung University (Taiwan): " Microstructural
evolution and formation of highly c-axis-oriented aluminum nitride films by
reactively magnetron sputtering deposition." W.J. Liu, S.J. Wu, C.M.
Chen, Y.C. Lai, and C.H. Chuang, Journal of Crystal Growth,
276(3-4):525-533 (April 1, 2005). [
Abstract ]
·
Institute of Materials
Research & Engineering (Singapore) / Singapore-MIT Alliance (Singapore) /
Institute of Semiconductors (China): "Luminescence properties of
multi-layer InGaN quantum dots grown on C- and R-plane sapphire substrates."
Z. Chen, S.J. Chua, P.D. Han, X.L. Liu, D.C. Lu, Q.S. Zhu, Z.G. Wang, and S.
Tripathy, Physica E-Low-Dimensional Systems & Nanostructures,
27(3):314-318 (April 2005). [
Abstract ]
·
Jawaharlal Nehru Centre of
Advance Scientific Research (India) / Indian Institute of Science (India): "AlN
nanocrystals by new chemical routes." K. Sardar and C.N.R. Rao, Solid
State Sciences, 7(2):217-220 (February 2005). [
Abstract ]
·
Jilin University (China) /
Chinese Academy of Sciences (China) / Beijing University of Technology
(China): "Effect of misfit dislocation originated from strained
layer on photoluminescence properties of InxGa1-xN/GaN multiple quantum wells."
W. Lu, D.B. Li, C.R. Li, G. Chen, and Z. Zhang, Chinese Physics Letters,
22(4):971-974 (April 2005). [
Abstract ]
·
Katholieke University of
Leuven (Belgium) / Chinese Academy of Sciences (China) / Peking University
(China): "Comparison of the properties of GaN grown on complex
Si-based structures." S.Q. Zhou, A. Vantomme, B.S. Zhang, H. Yang, and
M.F. Wu, Applied Physics Letters, 86(8):081912 (February 21, 2005). [
Abstract ]
·
Korea Advanced Institute of
Science & Technology (South Korea) / Sungkyunkwan University (South Korea)
/ Hanyang University (South Korea) / Kyungpook National University (South
Korea): "Synthesis of aligned GaN nanorods on Si (111) by
molecular beam epitaxy." Y.H. Kim, J.Y. Lee, S.H. Lee, J.E. Oh, and
H.S. Lee, Applied Physics A-Materials Science & Processing,
80(8):1635-1639 (May 2005). [
Abstract ]
·
Korea Basic Science
Institute (South Korea) / Korea University (South Korea) / Samsung Advanced
Institute of Technology (South Korea): "Depth-dependent optical
properties of a HVPE-grown freestanding Si-doped GaN single crystal."
E.K. Koh, I.W. Park, H. Choi, M. Yoon, S.H. Choh, H.S. Kim, Y.M. Cho, S. Kim et
al, Journal of Crystal Growth, 276(1-2):37-42 (March 15, 2005). [
Abstract ]
·
Korea Basic Science
Institute (South Korea) / Samsung Advanced Institute of Technology (South Korea):
"Free carrier concentration gradient along the c-axis of a
freestanding Si-doped GaN single crystal." M. Yoon, I.W. Park, H.
Choi, S.S. Park, and E.K. Koh, Japanese Journal of Applied Physics Part
1-Regular Papers Short Notes & Review Papers, 44(2):828-831 (February,
2005). [
Abstract ]
·
Korea Maritime University
(South Korea) / Korea Basic Science Institute (South Korea) / Dong-A University
(South Korea) / Andong National University (South Korea) / Nagoya University
(Japan): "Growth of thick AlGaN by mixed-source hydride vapor
phase epitaxy." H.S. Ahn, K.H. Kim, M. Yang, J.Y. Yi, H.J. Lee, C.R.
Cho, H.K. Cho, S.W. Kim et al, Applied Surface Science, 243(1-4):178-182
(April 30, 2005). [
Abstract ]
·
Linkoping University
(Sweden) / Bulgarian Academy of Sciences (Bulgaria) / Lumilog (France): "High-quality
2 '' bulk-like free-standing GaN grown by hydride vapour phase epitaxy on a Si-doped
metal organic vapour phase epitaxial GaN template with an ultra low dislocation
density." D. Gogova, H. Larsson, A. Kasic, G.R. Yazdi, I. Ivanov, R.
Yakimova, B. Monemar, E. Aujol et al, Japanese Journal of Applied Physics
Part 1-Regular Papers Short Notes & Review Papers, 44(3):1181-1185
(March 2005). [
Abstract ]
·
Mie University (Japan) /
Sumitomo Chemical Co Ltd (Japan): "Freestanding GaN substrate by
advanced facet-controlled epitaxial lateral overgrowth technique with masking
side facets." S. Bohyama, H. Miyake, K. Hiramatsu, Y. Tsuchida, and T.
Maeda, Japanese Journal of Applied Physics Part 2-Letters & Express
Letters, 44(1-7):L24-L26 (2005). [
Abstract ]
·
Nagoya Institute of
Technology (Japan): "High performance of InGaN LEDs on (111)
silicon substrates grown by MOCVD." T. Egawa, B. Zhang, and H.
Ishikawa, IEEE Electron Device Letters, 26(3):169-171 (March 2005). [
Abstract ]
·
Nanjing University
(China): "The growth of GaN films on Si substrates by HVPE."
H.Q. Yu, L. Chen, R. Zhang, X.Q. Xiu, Z.L. Xie, Y.D. Ye, S.L. Gu, B. Shen et al,
PRICM 5: the Fifth Pacific Rim International Conference on Advanced
Materials and Processing, Pts 1-5, 475-479(1-5):3783-3786 (2005). [Paper
previews available
here ]
·
National Cheng Kung
University (Taiwan) / Cheng Shiu University (Taiwan) / National Yunlin
University of Science & Technology (Taiwan): "Mg-doped GaN
activated with Ni catalysts." S.M. Wang, C.H. Chen, S.J. Chang, Y.K.
Su, and B.R. Huang, Materials Science and Engineering B-Solid State
Materials for Advanced Technology, 117(2):107-111 (March 15, 2005). [
Abstract ]
·
National Cheng Kung
University (Taiwan) / Feng Chia University (Taiwan) / National Taiwan Ocean
University (Taiwan): "On the optical properties and
microstructures of GaN films inserted with low-temperature Al0.8Ga0.2N
interlayers." B.H. Shih, J.R. Gong, S.W. Lin, Y.L. Tsai, W.T. Liao,
T.Y. Lin, Y.T. Lee, and J.G. Chang, Journal of Crystal Growth,
276(3-4):362-366 (April 1, 2005). [
Abstract ]
·
National Cheng Kung
University (Taiwan) / National Central University (Taiwan) / South Epitaxy Corp
(Taiwan): "ICP etching of sapphire substrates." Y.P. Hsu,
S.J. Chang, Y.K. Su, J.K. Sheu, C.H. Kuo, C.S. Chang, and S.C. Shei, Optical
Materials, 27(6):1171-1174 (March 2005). [
Abstract ]
·
National Cheng Kung
University (Taiwan) / National Yunlin University of Science & Technology
(Taiwan) / Kao Yuan Institute of Technology (Taiwan) / South Taiwan University
of Technology (Taiwan) / National Sun Yat Sen University (Taiwan): "Self-formation
of GaN hollow nanocolumns by inductively coupled plasma etching." S.C.
Hung, Y.K. Su, S.J. Chang, S.C. Chen, L.W. Ji, T.H. Fang, L.W. Tu, and M. Chen,
Applied Physics A-Materials Science & Processing, 80(8):1607-1610
(May 2005 ). [
Abstract ]
·
National Chiao Tung
University (Taiwan): "Wafer bonding for high-brightness
light-emitting diodes via indium tin oxide intermediate layers." P.C.
Liu, C.Y. Hou, and Y.C.S. Wu, Thin Solid Films, 478(1-2):280-285 (May 1,
2005). [
Abstract ]
·
National Chiao Tung
University (Taiwan) / True Light Corp (Taiwan) / Global Union Technology Corp
(Taiwan): "Improvement of InGaN-GaN light-emitting diode
performance with a nano-roughened p-GaN surface." H.W. Huang, C.C.
Kao, J.I. Chu, H.C. Kuo, S.C. Wang, and C.C. Yu, IEEE Photonics Technology
Letters, 17(5):983-985 (May 2005). [
Abstract ]
·
National Institute Advance
Industrial Science & Technology (Japan): "High-density
self-assembled GaN nanoislands on SiC (0001) by molecular-beam epitaxy."
K. Jeganathan, M. Shimizu, and H. Okumura, Applied Physics Letters,
86(7):073106 (February 14, 2005). [
Abstract ]
·
National Institute for
Materials Science (Japan) / Tokyo Institute of Technology (Japan) / CREST Japan
Science & Technology Agency (Japan): "Nonpolar a-plane GaN
film on Si(100) produced using a specially designed lattice-matched buffer: A
fresh approach to eliminate the polarization effect." J.H. Song, Y.Z.
Yoo, K. Nakajima, T. Chikyow, T. Sekiguchi, and H. Koinuma, Journal of
Applied Physics, 97(4):043531 (February 15, 2005). [
Abstract ]
·
National Research Council
of Canada: "Effect of template morphology on the efficiency of
InGaN/GaN quantum wells and light-emitting diodes grown by molecular-beam
epitaxy." H. Tang, S. Haffouz, A. Powell, J.A. Bardwell, and J. Webb, Applied
Physics Letters, 86(12):121110 (March 21, 2005). [
Abstract ]
·
National University of
Singapore (Singapore) / Institute of Materials Research & Engineering
(Singapore): "The influence of V defects on luminescence
properties of AIInGaN quaternary alloys." C.B. Soh, S.J. Chua, S.
Tripathy, W. Liu, and D.Z. Chi, Journal of Physics-Condensed Matter,
17(4):729-736 (February 2, 2005). [
Abstract ]
·
National University of
Singapore (Singapore) / Singapore MIT Alliance (Singapore) / Institute for
Materials Research & Engineering (Singapore) / MIT: " High
optical quality nanoporous GaN prepared by photoelectrochemical etching."
A.P. Vajpeyi, S.J. Chua, S. Tripathy, E.A. Fitzgerald, W. Liu, P. Chen, and
L.S. Wang, Electrochemical and Solid State Letters, 8(4):G85-G88 (2005).
[
Abstract ]
·
North Carolina State
University: "Photo-electron emission and atomic force microscopies
of the hydrogen etched 6H-SiC(0001) surface and the initial growth of GaN and
AlN." J.D. Hartman, K. Naniwae, C. Petrich, R. Nemanich, and R.F.
Davis, Applied Surface Science, 242(3-4):428-436 (April 15, 2005). [
Abstract ]
·
Osaka University (Japan): "Synthesis
of GaN crystal using gallium hydride." F. Kawamura, M. Imade, M.
Yoshimura, Y. Mori, and T. Sasaki, Japanese Journal of Applied Physics Part
2-Letters & Express Letters, 44(1-7):L1-L3 (2005). [
Abstract ]
·
Palo Alto Research Center:
"Shallow electronic states induced by prismatic stacking faults in
AIN and GaN." J.E. Northrup, Applied Physics Letters,
86(7):071901 (February 14, 2005). [
Abstract ]
·
PANalytical BV
(Netherlands) / University of Paderborn (Germany) / Johannes Kepler University
(Austria): "In situ and real-time characterization of
metal-organic chemical vapor deposition growth by high resolution x-ray
diffraction." A. Kharchenko, K. Lischka, K. Schmidegg, H. Sitter, J.
Bethke, and J. Woitok, Review of Scientific Instruments, 76(3):033101
(March 2005). [
Abstract ]
·
Peking University (China):
"Preparation of GaN-based cross-sectional TEM specimens by laser
lift-off." Z.L. Li, X.D. Hu, C. Ke, R.J. Nie, X.H. Luo, X.P. Zhang,
T.J. Yu, B. Zhang et al, Micron, 36(3):281-284 (2005). [
Abstract ]
·
Polish Academy of Sciences
(Poland) / Technical University of Szczecin (Poland) / Institute of Electronic
Materials Technology (Poland): "Determination of growth conditions
and structure of SrAl0.5Ta0.5O3 : LaAlO3 : CaAl0.5Ta0.5O3 crystals."
R. Aleksiyko, M. Berkowski, J. Fink-Finowicki, R. Diduszko, P. Byszewski, and
R. Kikalejshvili-Domukhovska, Crystal Research and Technology,
40(4-5):380-385 (April 2005). [
Abstract ]
·
Polish Academy of Sciences
(Poland) / University of Copenhagen (Denmark) / Chalmers University of
Technology (Sweden) / University of Gothenburg (Sweden) / Facultés
Universitaires Notre-Dame de la Paix (Belgium): "Surface and
electronic structure of Ga0.92In0.08N thin film investigated by photoelectron
spectroscopy." B.J. Kowalski, I.A. Kowalik, R.J. Iwanowski, J.
Sadowski, J. Kanski, B.A. Orlowski, J. Ghijsen, F. Mirabella et al, Thin
Solid Films, 476(2):396-404 (April 8, 2005). [
Abstract ]
·
Politechnical University of
Madrid (Spain) / Paul Drude Institut fur Festkorperelekt (Germany) / University
of Rey Juan Carlos (Spain): "Columnar AlGaN/GaN nanocavities with
AlN/GaN Bragg reflectors grown by molecular beam epitaxy on Si(111)."
J. Ristic, E. Calleja, A. Trampert, S. Fernandez-Garrido, C. Rivera, U. Jahn,
and K.H. Ploog, Physical Review Letters, 94(14):146102 (April 15, 2005).
[
Abstract ]
·
Politechnical University of
Madrid (Spain) / Paul Drude Institut fur Festkorperelekt (Germany) / University
of Roma Tor Vergata (Italy): "GaN/AlGaN nanocavities with AlN/GaN
Bragg reflectors grown in AlGaN nanocolumns by plasma assisted MBE."
J. Ristic, E. Calleja, S. Fernandez-Garrido, A. Trampert, U. Jahn, K.H. Ploog,
M. Povoloskyi, and A. Di Carlo, Physica Status Solidi A-Applied Research,
202(3):367-371 (February 2005). [
Abstract ]
·
Russian Academy of Sciences (Russia): "Features of GaN growth attained by metal-organic
vapor-phase epitaxy in a low-pressure reactor." O.I. Khrykin, A.V. Butin, D.M. Gaponova, V.M. Danil'tsev, M.N. Drozdov, Y.N. Drozdov, A.V. Murel, and V.I. Shashkin, Semiconductors, 39(1):14-16 (2005). [
Abstract ]
·
Russian Academy of Sciences (Russia) / Monokristal Synthetic Corundum Factory (Russia): "Effect
of the parameters of sapphire substrates on the crystalline quality of GaN layers." Y.N. Drozdov, N.V. Vostokov, D.M. Gaponova, V.M. Danil'tsev,
M.N. Drozdov, O.I. Khrykin, A.S. Filimonov, and V.I. Shashkin, Semiconductors, 39(1):1-3 (2005). [
Abstract ]
·
Science University of Tokyo
(Japan): "Effect of thermal radiation and absorption in GaN-MOVPE
growth modeling on temperature distribution and chemical state." A.
Hirako and K. Ohkawa, Journal of Crystal Growth, 276(1-2):57-63 (March
15, 2005). [
Abstract ]
·
Science University of Tokyo (Japan): "Modeling of reaction pathways of GaN growth by
metalorganic vapor-phase epitaxy using TMGa/NH3/H-2 system: A computational
fluid dynamics simulation study." A. Hirako, K. Kusakabe, and K.
Ohkawa, Japanese Journal of Applied Physics Part 1-Regular Papers Short
Notes & Review Papers, 44(2):874-879 (February 2005). [
Abstract ]
·
Science University of Tokyo
(Japan) / Japan Science & Technology Agency (Japan): "Impurity
doping effect on thermal stability of InGaN/GaN multiple quantum-well
structures." K. Kusakabe, T. Hara, and K. Ohkawa, Journal of
Applied Physics, 97(4):043503 (February 15, 2005). [
Abstract ]
·
Seoul National University
(South Korea): "Buffer-layer-free growth of high-quality epitaxial
GaN films on 4H-SiC substrate by metal-organic chemical vapor deposition."
J.K. Jeong, J.H. Choi, H.J. Kim, H.C. Seo, H.J. Kim, E. Yoon, C.S. Hwang, and
H.J. Kim, Journal of Crystal Growth, 276(3-4):407-414 (April 1, 2005). [
Abstract ]
·
Shandong Normal University
(China): "Fabrication of GaN films through reactive reconstruction
of magnetron sputtered ZnO/Ga2O3." H.Y. Gao, H.Z. Zhuang, C.S. Xue,
Z.H. Dong, J.T. He, Y.A. Liu, Y.X. Wu, and D.H. Tian, Journal of Central
South University of Technology, 12(1):9-12 (February 2005). [
Abstract ]
·
Shandong Normal University
(China): "Formation of GaN film by ammoniating Ga2O3/Al2O3
deposited on Si(111) substrate." Q.Q. Wei, C.S. Xue, Z.C. Sun, W.T.
Cao, and H.H. Zhuang, Rare Metal Materials and Engineering,
34(2):312-315 (February 2005). [No URL available]
·
Shandong Normal University
(China): "Formation of single crystal nanowires of GaN On the Si
substrates." C.S. Xue, Z.H. Dong, H.Z. Zhuang, H.Y. Gao, Y.A. Liu, and
Y.X. Wu, PRICM 5: the Fifth Pacific Rim International Conference on Advanced
Materials and Processing, Pts 1-5, 475-479(1-5):4175-4178 (2005). [Paper
previews available
here ]
·
Shandong Normal University
(China): "Synthesis of bamboo-shaped gallium nitride nanorods."
H.Z. Zhuang, H.Y. Gao, C.S. Xue, Z.H. Dong, and J.T. He, PRICM 5: the Fifth
Pacific Rim International Conference on Advanced Materials and Processing, Pts
1-5, 475-479(1-5):3575-3578 (2005). [Paper previews available
here ]
·
Shandong Normal University
(China): "Synthesis of three kinds of GaN nanowires through Ga2O3
films' reaction with ammonia." Z.H. Dong, C.S. Xue, H.Z. Zhuang, S.Y.
Wang , H.Y. Gao, D.H. Tian, Y.X. Wu, H.T. He et al, Physica E-Low-Dimensional
Systems & Nanostructures, 27(1-2):32-37 (March 2005). [
Abstract ]
·
Shandong University (China)
/ Shandong Normal University (China): "Synthesis and properties of
GaN nanostructures." H.L. Ma, C.S. Xue, Y.G. Yang, H.Z. Zhang, Jin-Ma,
J.Q. Liu, H.D. Xiao, and F.J. Zong, PRICM 5: the Fifth Pacific Rim
International Conference on Advanced Materials and Processing, Pts 1-5,
475-479(1-5):3367-3370 (2005). [Paper previews available
here ]
·
Shenzhen University (China)
/ Peking University (China) / Changchun University of Science & Technology
(China) / Tianjin University (China) : "Effect of annealing on
photoluminescence and microstructures of InGaN/GaN multi-quantum well with
Mg-doped p-type GaN." Z.H. Li, T.J. Yu, Z.J. Yang, Y.C. Feng, G.Y.
Zhang, B.P. Guo, and H.B. Niu, Chinese Physics, 14(4):830-833 (April
2005). [
Abstract ]
·
Singapore MIT Alliance
(Singapore) / Institute for Materials Research & Engineering (Singapore) /
MIT: "High optical quality GaN nanopillar arrays." Y.D.
Wang, S.J. Chua, S. Tripathy, M.S. Sander, P. Chen, and C.G. Fonstad, Applied
Physics Letters, 86(7):071917 (February 14, 2005). [
Abstract ]
·
SUNY-Stony Brook / Solid State Scientific Corp / US Air Force Research Laboratory: "Modeling of aluminum nitride growth by halide vapor transport epitaxy method." D.
Cai, L.L. Zheng, H. Zhang, V.L. Tassev, and D.F. Bliss, Journal of Crystal Growth, 276(1-2):182-193 (March 15, 2005). [
Abstract ]
·
Technical University of Darmstadt (Germany) / Merck KGaA (Germany) : "Synthesis of InxGa1-xN solid solutions." I. Kinski, F. Maurer, H. Winkler, and R.
Riedel, Zeitschrift Fur Kristallographie, 220(2-3):196-200 (2005). [
Abstract ]
·
Texas Technical University: "Analysis of nonselective plasma etching of AlGaN by
CF4/Ar/Cl-2." V. Kuryatkov, B. Borisov, J. Saxena, S.A. Nikishin, H.
Temkin, S. Patibandla, L. Menon, and M. Holtz, Journal of Applied Physics,
97(7):073302 (April 1, 2005). [
Abstract ]
·
Tohoku University (Japan) /
ULVAC Japan Ltd (Japan): "Novel method for site-controlled surface
nanodot fabrication by ion beam synthesis." R. Buckmaster, T. Hanada,
Y. Kawazoe, M.W. Cho, T.F. Yao, N. Urushihara, and A. Yamamoto, Nano Letters,
5(4):771-776 (April 2005). [
Abstract ]
·
Toyota Center for Research
& Development Laboratories Inc (Japan) / University of Florida: "Electrical
characteristics of GaN implanted with Si+ at elevated temperatures."
Y. Irokawa, O. Fujishima, T. Kachi, S.J. Pearton, and F. Ren, Applied
Physics Letters, 86(11):112108 (March 14, 2005). [
Abstract ]
·
University of Almeria
(Spain) / Victoria University of Wellington (New Zealand) / Industrial Research
Ltd (New Zealand) / University Montpellier (France) / University of Paris
(France): "Evolution of the local structure in GaN : O thin films
grown by ion-assisted deposition with film thickness." M.J. Ariza, A.
Koo, H.J. Trodahl, B.J. Ruck, A. Bittar, D.J. Jones, B. Bonnet, J. Roziere et
al, Surface and Interface Analysis, 37(3):273-280 (March 2005). [
Abstract ]
·
University of Bristol (UK)
/ Arizona State University / Meijo University (Japan): "CBED study
of grain misorientations in AlGaN epilayers." S.L. Sahonta, D. Cherns,
R. Liu, F.A. Ponce, H. Amano, and I. Akasaki, Ultramicroscopy,
103(1):23-32 (April, 2005). [
Abstract ]
·
University of California-Berkeley:
"Growth modes of InN (000-1) on GaN buffet layers on sapphire."
B. Liu, T. Kitajima, D.X. Chen, and S.R. Leone, Journal of Vacuum Science
& Technology A, 23(2):304-309 (March 2005-April 30, 2005). [
Abstract ]
·
University of
California-Los Angeles/ Duke University / US Army Research Officice / Wayne
State University / Corning Inc. / North Carolina State University: "Refractive
indices of ZnSiN2 on r-plane sapphire." B.P. Cook, H.O. Everitt, I.
Avrutsky, A. Osinsky, A. Cai, and J.F. Muth, Applied Physics Letters,
86(12):121906 (March 21, 2005). [
Abstract ]
·
University of
California-Santa Barbara : "Demonstration of nonpolar m-plane
InGaN/GaN light-emitting diodes on free-standing m-plane GaN substrates."
A. Chakraborty, B.A. Haskell, S. Keller, J.S. Speck, S.P. Denbaars, S.
Nakamura, and U.K. Mishra, Japanese Journal of Applied Physics Part
2-Letters & Express Letters, 44(1-7):L173-L175 (2005). [
Abstract ]
·
University of
California-Santa Barbara: "Growth of AlN by the chemical vapor
reaction process." T. Hashimoto, K. Fujito, K. Samonji, J.S. Speck,
and S. Nakamura, Japanese Journal of Applied Physics Part 1-Regular Papers
Short Notes & Review Papers, 44(2):869-873 (February 2005). [
Abstract ]
·
University of California-Santa Barbara: "Defect reduction in (1(1)over-bar00)
m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase
epitaxy." B.A. Haskell, T.J. Baker, M.B. Mclaurin, F. Wu, P.T. Fini,
S.P. Denbaars, J.S. Speck, and S. Nakamura, Applied Physics Letters,
86(11):111917 (March 14, 2005). [
Abstract ]
·
University of Grenoble(France) / CEA (France): "Formation of self-assembled quantum dots
induced by the Stranski-Krastanow transition: a comparison of various
semiconductor systems." H. Mariette, Comptes Rendus Physique,
6(1):23-32 ( January 2005-February 28, 2005). [
Abstract ]
·
University of Karlsruhe(Germany): "Possible pathways of CVD processes leading to III-V
semiconductors via a two-dimensional growth." H.J. Himmel, ChemPhysChem,
6(4):706-713 (April 2005). [
Abstract ]
·
University of Leoben
(Austria) / Materials Center (Austria): "Simultaneous
determination of experimental elastic and thermal strains in thin films."
J. Keckes, Journal of Applied Crystallography, 38(2):311-318 (April
2005). [
Abstract ]
·
University of Liverpool
(UK) / ENSICAEN (France) / Dong-A University (South Korea) / Chonbuck National
University (South Korea): "V-defects and dislocations in InGaN/GaN
heterostructures." A.M. Sanchez, M. Gass, A.J. Papworth, P.J. Goodhew,
P. Singh, P. Ruterana, H.K. Cho, R.J. Choi et al, Thin Solid Films,
479(1-2):316-320 (May 23, 2005). [
Abstract ]
·
University of Magdeburg
(Germany): "In situ monitoring of the stress evolution in growing
group-III-nitride layers." A. Krost, A. Dadgar, F. Schulze, J.
Blasing, G. Strassburger, R. Clos, A. Diez, P. Veit et al, Journal of
Crystal Growth, 275(1-2):209-216 (February 15, 2005). [
Abstract ]
·
University of Maryland: "Identification
of a deposition rate profile subspace corresponding to spatially-uniform films
in planetary CVD reactors: a new criterion for uniformity control."
R.A. Adomaitis, Computers & Chemical Engineering, 29(4):829-837
(March 15, 2005). [
Abstract ]
·
University of New Mexico: "Nanoscale
spatial phase modulation of GaN on a V-grooved Si substrate-cubic phase GaN on
Si(001) for monolithic integration." S.C. Lee, B. Pattada, S.D.
Hersee, Y.B. Jiang, and S.R.J. Brueck, IEEE Journal of Quantum Electronics,
41(4):596-605 (April 2005). [
Abstract ]
·
University of Nijmegen
(Netherlands) / Polish Academy of Sciences (Poland): "Statistical
photoluminescence of dislocations and associated defects in heteroepitaxial GaN
grown by metal organic chemical vapor deposition." L. Macht, J.L.
Weyher, A. Grzegorczyk, and P.K. Larsen, Physical Review B, 71(7):073309
(February 2005). [
Abstract ]
·
University of Poitiers
(France): "Pinch off of nanopipes under electron irradiation in
GaN." F. Pailloux, J. Colin, J.F. Barbot, and J. Grilhe, Applied
Physics Letters, 86(13):131908 (March 28, 2005). [
Abstract ]
·
University of Regensburt
(Germany): "Growth of crack-free GaN on Si(111) with graded AlGaN
buffer layers." A. Able, W. Wegscheider, K. Engl, and J. Zweck, Journal
of Crystal Growth, 276(3-4):415-418 (April 1, 2005). [
Abstract ]
·
University of Sains
Malaysia (Malaysia) / Ohio University: "Crystallinity studies of
GaN/Si films grown at different temperatures by infrared reflectance
spectroscopy." S.S. Ng, Z. Hassan, M.R. Hashim , and M.E. Kordesch, Materials
Chemistry and Physics, 91(2-3):404-408 (June 15, 2005). [
Abstract ]
·
University of Sains
Malaysia (Malaysia) / Ohio University: "Growth and properties of
GaN/Si heterojunction." Z. Hassan, S.S. Ng, G.L. Chew, F.K. Yam, M.J.
Abdullah, M.R. Hashim, K. Ibrahim, and M.E. Kordesch, Cross-Disciplinary
Applied Research in Materials Science and Technology, 480-481:531-536
(2005). [
Abstract ]
·
University of Sheffield
(UK): "Fabrication and optical investigation of a high-density GaN
nanowire array." T. Wang , F. Ranalli, P.J. Parbrook, R. Airey, J.
Bai, R. Rattlidge, and G. Hill, Applied Physics Letters, 86(10):103103
(March 7, 2005). [
Abstract ]
·
University of Southern
California: "Anisotropic Mg incorporation in GaN growth on
nonplanar templates." D.W. Ren and P.D. Dapkus, Applied Physics
Letters, 86(12):121901 (March 21, 2005). [
Abstract ]
·
University of Southern
California: "Low-dislocation-density, nonplanar GaN templates for
buried heterostructure lasers grown by lateral epitaxial overgrowth."
D.W. Ren, W. Zhou, and P.D. Dapkus, Applied Physics Letters ,
86(11):111901 (March 14, 2005). [
Abstract ]
·
University of Strathclyde
(UK): "Tapered sidewall dry etching process for GaN and its
applications in device fabrication." H.W. Choi, C.W. Jeon, and M.D.
Dawson, Journal of Vacuum Science & Technology B, 23(1):99-102
(January , 2005-February 28, 2005). [
Abstract ]
·
University of Surrey (UK): "Engineering of boron-induced dislocation loops for efficient
room-temperature silicon light-emitting diodes." M. Milosavljevic, G.
Shao, M.A. Lourenco, R.M. Gwilliam, and K.P. Homewood, Journal of Applied
Physics, 97(7):073512 (April 1, 2005). [
Abstract ]
·
US Air Force Research
Laboratory: "Optimized coalescence method for the metalorganic
chemical vapor deposition (MOCVD) growth of high quality Al-polarity AIN films
on sapphire." Q. Paduano and D. Weyburne, Japanese Journal of
Applied Physics Part 2-Letters & Express Letters, 44(1-7):L150-L152
(2005). [
Abstract ]
·
Vilnius State University
(Lithuania) / Lumilog (France): "Characterization of differently grown
GaN epilayers by time-resolved four-wave mixing technique." K.
Jarasiunas, T. Malinauskas, R. Aleksiejunas, M. Sudzius, E. Frayssinet, B.
Beaumont, J.P. Faurie, and P. Gibart, Physica Status Solidi A-Applications
and Materials Science, 202(4):566-571 (March 2005). [
Abstract ]
·
Vilnius State University
(Lithuania) / University of South Carolina: "Luminescence of
highly photoexcited GaN epilayers and heterostructures grown on different
sapphire crystal planes." S. Jursenas, S. Miasojedovas, G. Kurilcik,
V. Liuolia, A. Zukauskas, C.Q. Chen, J.W. Yang, E. Kuokstis et al, Acta
Physica Polonica A, 107(2):235-239 (February 2005). [
Abstract ]
·
Waseda University (Japan) /
Eudyna Devices Inc (Japan) / Koha Co Ltd (Japan): "Epitaxial
growth of GaN on (100) beta-Ga2O3 substrates by metalorganic vapor phase
epitaxy." K. Shimamura, E.G. Villora, K. Domen, K. Yui, K. Aoki, and
N. Ichinose, Japanese Journal of Applied Physics Part 2-Letters &
Express Letters, 44(1-7):L7-L8 ( 2005). [
Abstract ]
·
Wroclaw Technical
University (Poland) / Institute for Electronics Materials Technology (Poland):
"X-ray characterization of thick GaN layers grown by HVPE."
R. Korbutowicz, J. Kozlowski, E. Dumiszewska, and J. Serafinczuk, Crystal
Research and Technology, 40(4-5):503-508 (April 2005). [
Abstract ]
·
Xerox Corp: "Effect
of magnesium on the structure and growth of GaN(0001)." J.E. Northrup,
Applied Physics Letters, 86(12):122108 (March 21, 2005). [
Abstract ]
·
Xidian University (China):
"Strain property studies of GaN : Mg films grown by MOCVD."
Q. Feng and H. Yue, PRICM 5: the Fifth Pacific Rim International Conference
on Advanced Materials and Processing, Pts 1-5, 475-479(1-5):1697-1700
(2005). [Paper previews available
here ]
·
Yale University / Dong-A
University (South Korea) / Lumileds LLC: "Investigation of Mg
doping in high-Al content p-type AlxGa1-xN (0.3 < x < 0.5)."
S.R. Jeon, Z. Ren, G. Cui, J. Su, M. Gherasimova, J. Han, H.K. Cho, and L. Zhou,
Applied Physics Letters, 86(8):082107 (February 21, 2005). [
Abstract ]
B. Materials and Device Design Properties
·
Arizona State University / Sandia National Laboratories: "Bulk GaN and AlGaN/GaN
heterostructure drift velocity measurements and comparison to theoretical
models." J.M. Barker, D.K. Ferry, D.D. Koleske, and R.J. Shul, Journal
of Applied Physics, 97(6):063705 (March 15, 2005). [
Abstract ]
·
CCLRC (UK) / University of Bristol (UK): "Monte Carlo simulation of GaN/InN mixtures."
J.A. Purton, M.Y. Lavrentiev, and N.L. Allan, Journal of Materials Chemistry,
15(7):785-790 (2005). [
Abstract ]
·
Chang Gung University (Taiwan) / National Taiwan University (Taiwan) / National Tsing Hua University
(Taiwan) / National Taiwan Ocean University (Taiwan): "Electron transport in In-rich InxGa1-xN films." S.K. Lin, K.T. Wu, C.P. Huang,
C.T. Liang, Y.H. Chang, Y.F. Chen, P.H. Chang, N.C. Chen et al, Journal of Applied Physics , 97(4):046101 (February 15, 2005). [
Abstract ]
·
Chonbuk National University
(South Korea): "Electric-field-induced quenching effect of
photoluminescence on p-GaN films." T.S. Jeong, M.S. Han, J.H. Kim,
K.Y. Lim, and C.I. Youn, Journal of the Korean Physical Society,
46(4):968-972 (April 2005). [
Abstract ]
·
CNRS (France): "Free
energy and capture cross section of the E2 trap in n-type GaN." J.
Pernot, C. Ulzhofer, P. Muret, B. Beaumont, and P. Gibart, Physica Status
Solidi A-Applications and Materials Science, 202(4):609-613 (March 2005). [
Abstract ]
·
CNRS (France): "Inhomogeneous
broadening of AlxGa1-xN/GaN quantum wells." F. Natali, D. Byrne, M.
Leroux, B. Damilano, F. Semond , A. Le Louarn, S. Vezian, N. Grandjean et al, Physical
Review B, 71(7):075311 (February 2005). [
Abstract ]
·
CNRS (France) / CEA (France)
/ University of Cadiz (Spain): "Study of isolated cubic GaN
quantum dots by low-temperature cathodoluminescence." J.P. Garayt,
J.M. Gerard, F. Enjalbert, L. Ferlazzo, S. Founta , E. Martinez-Guerrero, F.
Rol, D. Araujo et al, Physica E-Low-Dimensional Systems & Nanostructures,
26(1-4):203-206 (February 2005). [
Abstract ]
·
CNRS (France) / University
of Strathclyde (UK) / University Glasgow (UK): "Angular dispersion
of photons and phonons in a photonic crystal of selectively grown GaN pyramids
containing an InxGa1-xN quantum well structure." D. Coquillat, J.
Torres, M.L.V. D'yerville, R. Legros, J.P. Lascaray, C. Liu, I.M. Watson, R.W.
Martin et al, Physica Status Solidi A-Applications and Materials Science,
202(4):652-655 (March 2005). [
Abstract ]
·
Dongguk University (South
Korea) / Hanyang University (South Korea): "Thickness effects of
Al0.5Ga0.5N barriers on the optical properties of delta-AlGaN-inserted
GaN-coupled multiquantum wells." Y.S. Park, C.M. Park, S.J. Lee, T.W.
Kang, S.H. Lee, and J.E. Oh, Journal of Applied Physics, 97(7):073516
(April 1, 2005). [
Abstract ]
·
ENSICAEN (France) /
University of Sido Bel Abbes (Algeria) / UMR (France): "First-principles
study of cubic AlxGa1-xN alloys." Z. Dridi, B. Bouhafs, and P.
Ruterana, Computational Materials Science, 33(1-3):136-140 (2005). [
Abstract ]
·
Federal University of
Uberlandia (Brazil) / Federal University of Sao Carlos (Brazil) / University
Brasilia (Brazil): "Influence of the quantum dot shape on the
determination of the electronic structure and electron decoherence."
D.R. Santos, F.Y. Qu, A.M. Alcalde, and P.C. Morais, Physica
E-Low-Dimensional Systems & Nanostructures, 26(1-4):331-336 (February
2005). [
Abstract ]
·
Gwangju Institute of
Science & Technology (South Korea) / Kopin Corp: "
Resonance-tunneling-assisted emission enhancement in green light-emitting
diodes with nanocraters formed in InGaN/GaN quantum-well active layers."
J.H. Song, G.H. Song, J.W. Lee, Y.W. Ok, and T.Y. Seong, Applied Physics
Letters, 86(13):132102 (March 28, 2005). [
Abstract ]
·
Hong Kong University of
Science & Technology (China) / Zhejiang University (China) / Kansas State
University: "Deep bandtail states picosecond intensity-dependent
carrier dynamics of GaN epilayer under high excitation." B. Guo, Z.R.
Qiu, J.Y. Lin, H.X. Jiang, and K.S. Wong, Applied Physics B-Lasers and
Optics, 80(4-5):521-526 (April 2005). [
Abstract ]
·
Institute of Semiconductor
Physics (Lithuania): "Vertical electron transport in GaN/AlGaN
heterostructures." A. Reklaitis, Acta Physica Polonica A,
107(2):261-266 (February 2005). [
Abstract ]
·
Institute of Semiconductor
Physics (Lithuania) / Cornell University: "Electron transport and
microwave noise in MBE- and MOCVD-grown AlGaN/AlN/GaN." A. Matulionis,
J. Liberis, L.F. Eastman, W.J. Schaff, J.R. Shealy, X. Chen, and Y.J. Sun, Acta
Physica Polonica A, 107(2):361-364 (February 2005). [
Abstract ]
·
Jiang Xi Normal University
(China) / South China Normal University (China): "First principles
study of wurtzite and zinc blende GaN: a comparison of the electronic and
optical properties." S.T. Li and C.Y. Ouyang, Physics Letters A,
336(2-3):145-151 (March 7, 2005). [
Abstract ]
·
Karlstad University
(Sweden) University of Tokyo (Japan): "Core-level photoemission
from stoichiometric GaN(0001)-1x." S.M. Widstrand, K.O. Magnusson,
L.S.O. Johansson, E. Moons, M. Gurnett, and M. Oshima, MRS Internet Journal
of Nitride Semiconductor Research , 10(1):1 (2005). [
Abstract ]
·
Lawrence Berkeley National
Laboratory / University of California-Berkeley / Cornell University: "On
the crystalline structure, stoichiometry and band gap of InN thin films."
K.M. Yu, Z. Liliental-Weber, W. Walukiewicz, W. Shan, J.W. Ager, S.X. Li, R.E.
Jones, E.E. Haller et al, Applied Physics Letters, 86(7):071910
(February 14, 2005). [
Abstract ]
·
Lumileds Lighting: "Polarization
anisotropy in the electroluminescence of m-plane InGaN-GaN
multiple-quantum-well light-emitting diodes." N.F. Gardner, J.C. Kim,
J.J. Wierer, Y.C. Shen, and M.R. Krames, Applied Physics Letters,
86(11):111101 (March 14, 2005). [
Abstract ]
·
Nanjing University (China):
"Anti-weak localization of the two dimensional electron gas in
modulation-doped AlxGa1-xN/GaN single quantum well." J. Lu, B. Shen,
N. Tang, D.J. Chen, and Y.D. Zheng, PRICM 5: the Fifth Pacific Rim
International Conference on Advanced Materials and Processing, Pts 1-5,
475-479(1-5):1787-1790 (2005). [Paper previews available
here ]
·
Nanjing University
(China): "Investigation into the energy band diagram and charge
distribution in AlGaN/GaN double heterostructures by self-consistent
Poisson-Schrodinger calculations." X.L. Ji , F. Chen, R.L. Jiang, J.J.
Zhou, B. Wen, P. Han, Z.L. Xie, R. Zhang et al, Chinese Physics Letters,
22(2):454-456 (February 2005). [
Abstract ]
·
Nanjing University
(China): "Temperature characterization of Raman scattering in an
AlGaN/GaN heterostructure." D.J. Chen, B. Shen, X.L. Wu, J.C. Shen,
F.J. Xu, K.X. Zhang, R. Zhang, R.L. Jiang et al, Applied Physics A-Materials
Science & Processing, 80(8):1729-1731 (May 2005). [
Abstract ]
·
National Cheng Kung
University (Taiwan) / Genesis Photon Inc (Taiwan): "Study of the
dominant luminescence mechanism in InGaN/GaN multiple quantum wells comprised
of ultrasmall InGaN quasiquantum dots." Y.L. Lai, C.P. Liu, and Z.Q.
Chen, Applied Physics Letters, 86(12):121915 (March 21, 2005). [
Abstract ]
·
National Institute of
Standards & Technology / TDI Inc / University of California-Santa Barbara /
Samsung Advanced Institute Technology (South Korea) / Lincoln Laboratory: "Measurement
of second order susceptibilities of GaN and AlGaN." N.A. Sanford, A.V.
Davydov, D.V. Tsvetkov, A.V. Dmitriev, S. Keller, U.K. Mishra, S.P. Denbaars,
S.S. Park et al, Journal of Applied Physics, 97(5):053512 (March 1,
2005). [
Abstract ]
·
National Renewable Energy
Laboratory: "Theoretical study of the band-gap anomaly of InN."
P. Carrier and S.H. Wei, Journal of Applied Physics, 97(3):033707
(February 1, 2005). [
Abstract ]
·
North Carolina State
University: "Scanning probe investigation of surface charge and
surface potential of GaN-based heterostructures ." B.J. Rodriguez,
W.C. Yang, R.J. Nemanich, and A. Gruverman, Applied Physics Letters,
86(11):112115 (March 14, 2005). [
Abstract ]
·
NTT Advanced Technology
Corp (Japan) / NTT Basic Research Laboratories (Japan) / Kyushu University
(Japan): "InN polarity determination by convergent-beam electron
diffraction." T. Mitate, S. Mizuno, H. Takahata, R. Kakegawa, T.
Matsuoka, and N. Kuwano, Applied Physics Letters, 86(13):134103 (March
28, 2005). [
Abstract ]
·
Osaka University (Japan) /
Osaka City University (Japan) / Kyoto Institute of Technology (Japan): "Measurement
of electrical properties of GaN thin films using Terahertz-time domain
spectroscopy." T. Nagashima, K. Takata, S. Nashima, H. Harima, and M.
Hangyo, Japanese Journal of Applied Physics Part 1-Regular Papers Short
Notes & Review Papers, 44(2):926-931 (February 2005). [
Abstract ]
·
Otto Von Guericke
University (Germany): "Correlation between macroscopic transport
parameters and microscopic electrical properties in GaN." H. Witte, A.
Krtschil, E. Schrenk, K. Fluegge, A. Dadgar, and A. Krost, Journal of
Applied Physics, 97(4):043710 (February 15, 2005). [
Abstract ]
·
Peking University (China):
"First-principles calculations on the open end of single-walled AlN
nanotubes." S.M. Hou, J.X. Zhang, Z.Y. Shen, X.Y. Zhao, and Z.Q. Xue, Physica
E-Low-Dimensional Systems & Nanostructures, 27(1-2):45-50 (March 2005).
[ Abstract ]
·
Peking University (China):
"Polaron effects due to interface optical-phonons in wurtzite
GaN/AlN quantum wells." Y.H. Zhu and J.J. Shi, Physica Status
Solidi B-Basic Solid State Physics, 242(5):1010-1021 (April 2005). [
Abstract ]
·
Polish Academy of Sciences
(Poland) / University of Aarhus (Denmark)/ Politechnical University of Madrid
(Spain): "Pressure behavior of beryllium-acceptor level in gallium
nitride." H. Teisseyre, I. Gorczyca, N.E. Christensen, A. Svane, F.B.
Naranjo, and E. Calleja, Journal of Applied Physics, 97(4):043704
(February 15, 2005). [
Abstract ]
·
Russian Academy of Sciences
(Russia): "Kinetics and inhomogeneous carrier injection in InGaN
nanolayers." D.S. Sizov, V.S. Sizov, E.E. Zavarin, V.V. Lundin, A.V.
Fomin, A.F. Tsatsul'nikov, and N.N. Ledentsov, Semiconductors,
39(2):249-253 (2005). [
Abstract ]
·
Russian Academy of Sciences
(Russia): "A study of carrier statistics in InGaN/GaN LED
structures." D.S. Sizov, V.S. Sizov, E.E. Zavarin, V.V. Lundin, A.V.
Fomin, A.F. Tsatsul'nikov, and N.N. Ledentsov, Semiconductors,
39(4):467-471 (2005). [
Abstract ]
·
Russian Academy of Sciences
(Russia) / University of Karlsruhe (Germany): "Special features of
structural interaction in (AlGaIn)N/GaN heterostructures used as dislocation
filters." I.P. Soshnikov, N.N. Ledentsov, A.F. Tsatsul'nikov, A.V.
Sakharov, W.V. Lundin, E.A. Zavarin, A.V. Fomin, D. Litvinov et al, Semiconductors,
39(1):100-102 (2005). [
Abstract ]
·
Samsung Electronics (South
Korea) / Cornell University / Sunchon National University (South Korea) /
Gwangju Institute of Science & Technology (South Korea): "Electrical
and optical characteristics of InGaN/GaN microdisk LEDs." K.S. Lee, C.
Huh, J.M. Lee, E.J. Kang, and S.J. Park, Electrochemical and Solid State
Letters, 8(3):G68-G70 (2005). [
Abstract ]
·
SFA Inc / TDI Inc / US
Naval Research Laboratory: "Infrared dielectric function of
wurtzite aluminum nitride." W.J. Moore, J.A. Freitas, R.T. Holm, O.
Kovalenkov, and V. Dmitriev, Applied Physics Letters, 86(14):141912
(April 4, 2005). [
Abstract ]
·
Stanford University: "Coupled
optical and electronic simulations of electrically pumped
photonic-crystal-based light-emitting diodes." G. Veronis, W. Suh, Y.
Liu, M.H. Han, Z. Wang, R.W. Dutton, and S.H. Fan, Journal of Applied
Physics, 97(4):044503 (February 15, 2005). [
Abstract ]
·
Stanford University / Bell
Laboritories / MIT: "High-quality quantum point contacts in
GaN/AlGaN heterostructures." H.T. Chou, S. Luscher, D.
Goldhaber-Gordon, M.J. Manfra, A.M. Sergent, K.W. West, and R.J. Molnar, Applied
Physics Letters, 86(7):073108 (February 14, 2005). [
Abstract ]
·
Sungkyunkwan University
(South Korea) / Samsung Advanced Institute of Technology (South Korea): "Effect
of GaN microlens array on efficiency of GaN-based blue-light-emitting diodes."
D. Kim, H. Lee, N. Cho, Y. Sung, and G. Yeom, Japanese Journal of Applied
Physics Part 2-Letters & Express Letters, 44(1-7):L18-L20 (2005). [
Abstract ]
·
Tongji University (China):
"Ab initio study of the electronic properties of the planar Ga5N5
cluster." H.P. Zheng and J.A. Hao, Chinese Physics,
14(3):529-532 (March 2005). [
Abstract ]
·
Tongji University (China) /
Chinese Academy of Sciences (China): "Space-charge-limited
currents in GaN Schottky diodes." X.M. Shen, D.G. Zhao, Z.S. Liu, Z.F.
Hu, H. Yang, and J.W. Liang, Solid-State Electronics, 49(5):847-852 (May2005). [
Abstract ]
·
Tsing Hua University
(China) / Yunnan University (China) / Beijing University of Science &
Technology (China): "Lattice inversion for interatomic potentials
in AlN, GaN and InN." S. Zhang and N.X. Chen, Chemical Physics,
309(2-3):309-321 (March 14, 2005). [
Abstract ]
·
Universidad Autonoma de
Madrid (Spain) / Paul Drude Institut fur Festkorperelekt (Germany) /
Politechnical University of Madrid (Spain): "Resonant Raman
scattering in strained and relaxed InGaN/GaN multi-quantum wells." S.
Lazic, M. Moreno , J.M. Calleja, A. Trampert, K.H. Ploog, F.B. Naranjo, S.
Fernandez, and E. Calleja, Applied Physics Letters, 86(6):061905
(February 7, 2005). [
Abstract ]
·
University of Cagliari
(Italy) / UDR Cagliari (Italy) / University of Glasgow (UK): "Photocurrent
in epitaxial GaN." M. Salis, A. Anedda, F. Quarati, A.J. Blue, and W.
Cunningham, Journal of Applied Physics, 97(3):033709 (February 1, 2005).
[
Abstract ]
·
University of
California-Davis/ Lawrence Livermore National Laboratory / University of
California-Berkeley: "Electronic states and vibrational
frequencies of the triatomic Ga2N, GaN2, and their cations and anions."
C.S. Wang and K. Balasubramanian, Chemical Physics Letters,
402(4-6):294-299 (February 4, 2005). [
Abstract ]
·
University of
California-Santa Barbara / Af Ioffe Physico-Technical Institute (Russia): "Buried
stressors in nitride semiconductors: Influence on electronic properties."
A.E. Romanov, P. Waltereit, and J.S. Speck, Journal of Applied Physics,
97(4):043708 (February 15, 2005). [
Abstract ]
·
University of Crete
(Greece) / FORTH (Greece): "Physical model of InN growth on
Ga-face GaN (0001) by molecular-beam epitaxy." E. Dimakis, E.
Iliopoulos, K. Tsagaraki, and A. Georgakilas, Applied Physics Letters,
86(13):133104 (March 28, 2005). [
Abstract ]
·
University of Florida: "Effect of inductively coupled plasma damage on performance of GaN-InGaN
multiquantum-well light-emitting diodes." H.S. Yang, S.Y. Han, K.H. Baik, S.J. Pearton, and F. Ren, Applied Physics Letters,
86(10):102104 (March 7, 2005). [
Abstract ]
·
University of Hong Kong
(China): "Current transport property of n-GaN/n-6H-SiC
heterojunction: Influence of interface states." Y. Huang, X.D. Chen,
S. Fung, C.D. Beling, C.C. Ling, X.Q. Dai, and M.H. Xie, Applied Physics
Letters, 86(12):122102 (March 21, 2005). [
Abstract ]
·
University of Hong Kong (China) / Institute of Materials Research & Engineering (Singapore) : "Direct
observation and theoretical interpretation of strongly enhanced lateral
diffusion of photogenerated carriers in InGaN/quantum well structures."
S.J. Xu, Y.J. Wang, Q. Li, X.H. Zhang, W. Liu, and S.J. Chua, Applied
Physics Letters, 86(7):071905 (February 14, 2005). [
Abstract ]
·
University of Lecce (Italy) / Institute of Semiconductor Physics (Lithuania): "Giant
suppression of avalanche noise in GaN double-drift impact diodes." A.
Reklaitis and L. Reggiani, Solid-State Electronics, 49(3):405-408 (March 2005). [
Abstract ]
·
University of Michigan: "Mode-coupling characteristics and efficiency of quantum-dot electrically injected photonic
crystal waveguide-coupled light-emitting diodes." P.C. Yu, J. Topolancik, S. Chakravarty, and P. Bhattacharya, IEEE Journal of Quantum
Electronics, 41(3):455-460 (March 2005). [
Abstract ]
·
University of Montpellier (France)
/ UNIPRESS (Poland) / RIKEN (Japan): "Enhancement of localization
and confinement effects in quaternary group-III nitride multi-quantum wells on
SiC substrate." S. Anceau, P. Lefebvre, T. Suski, L. Konczewicz, H.
Hirayama, and Y. Aoyagi, Physica Status Solidi A-Applications and Materials
Science, 202(4):642-646 (March 2005). [
Abstract ]
·
University of North Texas /
Duke University / Virginia Commonwealth University / Waseda University
(Japan): "Size dependence of carrier recombination efficiency in
GaN quantum dots." A. Neogi, H. Everitt, H. Morkoc, T. Kuroda, and A.
Tackeuchi, IEEE Transactions on Nanotechnology, 4(2):297-299 (March 2005). [
Abstract ]
·
University of Oxford (UK) /
Dongguk University (South Korea): "Time-resolved and
time-integrated photoluminescence studies of coupled asymmetric GaN quantum
discs embedded in AlGaN barriers." J.H. Na, R.A. Taylor, J.H. Rice,
J.W. Robinson, K.H. Lee, Y.S. Park, C.M. Park, and T.W. Kang, Applied
Physics Letters, 86(8):083109 (February 21, 2005). [
Abstract ]
·
University of Oxford (UK) /
Dongguk University (South Korea): "Two-dimensional exciton
behavior in GaN nanocolumns grown by molecular-beam epitaxy." J.H. Na,
R.A. Taylor, J.H. Rice, J.W. Robinson, K.H. Lee, Y.S. Park, C.M. Park, and T.W.
Kang, Applied Physics Letters , 86(12):123102 (March 21, 2005). [
Abstract ]
·
University of Strathclyde
(UK) / University of Oxford (UK): "Luminescence properties of
isolated InGaN/GaN quantum dots." R.W. Martin, P.R. Edwards, R.A.
Taylor, J.H. Rice, J.H. Na, J.W. Robinson, J.D. Smith, C. Liu et al, Physica
Status Solidi A-Applied Research, 202(3):372-376 (February 2005). [
Abstract ]
·
University of Toulouse
(France) / University of Montpellier (France): " Raman scattering
by the longitudinal optical phonon in InN: Wave-vector nonconserving mechanisms."
F. Demangeot, C. Pinquier, J. Frandon, M. Gaio, O. Briot, B. Maleyre, S.
Ruffenach, and B. Gil, Physical Review B, 71(10):104305 (March 2005). [
Abstract ]
·
University of Zaragoza
(Spain): "On the significance of the surface states in isolated
AlxGa1-xN/GaN heterostructures." J.A.C. Perez, Solid-State
Electronics, 49(4):612-617 (April 2005 ). [
Abstract ]
·
Vilnius State University (Lithuania): "Investigation of carrier transport in GaN single
crystals and radiation detectors by thermally stimulated methods." V.
Kazukauskas, V. Kalendra, and J.V. Vaitkus, Acta Physica Polonica A,
107(2):340-345 (February 2005). [
Abstract ]
·
Vilnius State University
(Lithuania) / University of Latvia (Latvia) / National Taiwan University
(Taiwan ): "Stimulated emission in InGaN/GaN multiple quantum
wells with different indium content." S. Miasojedovas, S. Jursenas, G.
Kurilcik, A. Zukauskas, M. Springis, I. Tale, and C.C. Yang, Acta Physica
Polonica A, 107(2):256-260 (February 2005). [
Abstract ]
·
Wuhan University (China): "Piezoelectric
field-dependent interband transition in optical nonlinearities induced by
InGaN/GaN quantum well." J.J. Li, L.M. Liu, and D.Z. Yao, Physica
E-Low-Dimensional Systems & Nanostructures, 27(1-2):221-226 (March 2005). [
Abstract ]
·
Xian Jiaotong University
(China) / Kansas State University: "Time-resolved
photoluminescence studies of indium-rich InGaN alloys." G.D. Chen,
Y.Z. Zhu, G.J. Yan, J.S. Yuan, K.H. Kim, J.Y. Lin, and H.X. Jiang, Chinese
Physics Letters, 22(2):472-474 (February 2005). [
Abstract ]
C. Packaging and Reliability
·
Furukawa Electric Corp Ltd
(Japan): "Low on-voltage operation AlGaN/GaN Schottky barrier
diode with a dual Schottky structure." S. Yoshida, N. Ikeda, J. Li, T.
Wada , and H. Takehara, IEICE Transactions on Electronics,
E88c(4):690-693 (April 2005). [
Abstract ]
·
GIST (South Korea) /
Samsung Advanced Institute of Technology (South Korea): "Cu-doped
indium oxide/Ag ohmic contacts for high-power flip-chip light-emitting diodes."
J.O. Song, J.S. Kwak, and T.Y. Seong, Applied Physics Letters,
86(6):062103 (February 7, 2005). [
Abstract ]
· GIST (South Korea) / Samsung Advanced Institute of Technology (South Korea): "High transparency of Ag/Zn-Ni solid-solution ohmic contacts f |