|
ISSUE 26: SCIENTIFIC LITERATURE (Mid-December 2004 to Early February 2005) |
|
From the Technical Literature The material in this section is selected from scientific and technical papers that became available during the reporting time period. Links to online abstracts are provided. Most online abstracts are freely accessible to the public. A few require journal subscriptions or memberships, and are noted as such. The technical literature section is roughly organized by subject area and, within subjects, alphabetically by institution of the lead author. Use the links below to go directly to a section. A. Materials and Device Fabrication B. Materials and Device Design Properties A. Materials and Device Fabrication
·
Anna University (India) / Indira Gandhi Center for Atomic Research (India): "Optical study of GaN epilayer grown by metalorganic chemical vapor deposition and pulsed laser deposition." P. Premchander, P. Manoravi, M. Joseph, and K.
Baskar, Journal of Crystal Growth, 273(3-4):363-367 (January 3, 2005). [
Abstract ]
·
Beijing Institute of
Technology (China): "High-density, uniform gallium nitride
nanorods grown on Au-coated silicon substrate." C.B. Cao, X. Xiang,
and H.S. Zhu, Journal of Crystal Growth, 273(3-4):375-380 (January 3, 2005). [
Abstract ]
·
Catholic University of Nijmegen (Netherlands) / University of Utrecht (Netherlands) / Polish Academy of Sciences (Poland): "An electrochemical study of photoetching of
heteroepitaxial GaN: kinetics and morphology." L. Macht, J.J. Kelly, J.L. Weyher, A. Grzegorczyk, and P.K. Larsen, Journal of Crystal Growth,
273(3-4):347-356 (January 3, 2005 ). [
Abstract ]
·
Chang Gung University
(Taiwan) / National Tsing Hua University (Taiwan) / National Taiwan Ocean
University (Taiwan): "In-rich In1-xGaxN films by metalorganic
vapor phase epitaxy." C.A. Chang, C.F. Shih, N.C. Chen, T.Y. Lin, and
K.S. Liu, Applied Physics Letters, 85(25):6131-6133 (December 20, 2004). [
Abstract ]
·
Chinese Academy of Sciences
(China): "Crack-free InAlGaN quaternary alloy films grown on
Si(111) substrate by metalorganic chemical vapor deposition." J.J. Wu,
D.B. Li, Y. Lu, X.X. Han, J.M. Li, H.Y. Wei, T.T. Kang, X.H. Wang et al, Journal
of Crystal Growth, 273(1-2):79-85 (December 17, 2004). [
Abstract ]
·
Chinese Academy of Sciences
(China) / Southwest University of Science & Technology (China) / Academy
Sinica (China): "Low-temperature synthesis and characterization of
GaN nanocrystals from gallium trichloride precursor." F.S. Liu, Q.L.
Liu, J.K. Liang, G.B. Song, L.T. Yang, J. Luo, Y.Q. Zhou, H.W. Dong et al, Journal
of Materials Research, 19(12):3484-3489 (December 2004). [
Abstract ]
·
Chinese Academy of Sciences
(China): "Alloy compositional fluctuation in InAlGaN epitaxial
films." D.B. Li, X. Dong, J. Huang, X. Liu, Z. Xu, Z. Zhang, and Z.
Wang, Applied Physics A-Materials Science & Processing, 80(3):649-652
(February 2005). [
Abstract ]
·
Chonbuk National University (South Korea): "Growth of high quality GaN epilayers with SixNy inserting layer on Si(III) substrates." K.J. Lee, E.H. Shin, J.Y. Kim,
T.S. Oh, and K.Y. Lim, Journal of the Korean Physical Society,
45(S):S756-S759 (December 2004). [
Abstract ]
·
Cree Inc / Santa Barbara
Technology Center / North Carolina State University: "High
efficiency GaN-based LEDs and lasers on SiC." J. Edmond, A. Abare, M.
Bergman, J. Bharathan, K.L. Bunker, D. Emerson, K. Haberern, J. Ibbetson et al,
Journal of Crystal Growth, 272(1-4):242-250 (December 10, 2004). [
Abstract ]
·
Dongguk University (South
Korea) / Hanyang University (South Korea) / University of California-Los
Angeles: "Self-assembled GaN quantum dots in GaN/AlxGa1-xN
structures grown by PAMBE." G.N. Panin, Y.S. Park, and T.W. Kang, Journal
of the Korean Physical Society, 45(S):S840-S843 (December 2004). [
Abstract ]
·
Epivalley Company Ltd
(South Korea): "As-grown p-type GaN growth by dimethylhydrazine
nitrogen precursor." E.H. Park, J.S. Park, and T.K. Yoo, Journal of
Crystal Growth, 272(1-4):426-431 (December 10, 2004). [
Abstract ]
·
Helsinki University of
Technology (Finland): "Passivation of GaAs surface by ultrathin
epitaxial GaN layer." J. Riikonen, J. Sormunen, H. Koskenvaara, M.
Mattila, M. Sopanen, and H. Lipsanen, Journal of Crystal Growth,
272(1-4):621-626 (December 10, 2004). [
Abstract ]
·
High Pressure Research
Center (Poland) / Radboud University of Nijmegen (Netherlands): "Growth
of AlN, GaN and InN from the solution." S. Krukowski, I. Grzegory, M.
Bockowski, B. Lucznik, T. Suski, G. Nowak, J. Borysiuk, M. Wroblewski et al, International
Journal of Materials & Product Technology, 22(1-3):226-261 (2005). [
Abstract ]
·
Hong Kong University of
Science & Technology (China): "Dual wavelength InGaN/GaN
multi-quantum well LEDs grown by metalorganic vapor phase epitaxy."
Y.D. Qi, H. Liang, W. Tang, Z.D. Lu, and K.M. Lau, Journal of Crystal Growth,
272(1-4):333-340 (December 10, 2004). [
Abstract ]
·
Hong Kong University of
Science & Technology (China): "GaN-based blue light-emitting
diodes grown and fabricated on patterned sapphire substrates by metalorganic
vapor-phase epitaxy." Z.H. Feng, Y.D. Qi, Z.D. Lu, and K.M. Lau, Journal
of Crystal Growth, 272(1-4):327-332 (December 10, 2004). [
Abstract ]
·
IMEC (Belgium) / Catholic
University of Louvain (Belgium): "Influence of AlGaN nucleation
layers on structural and electrical properties of GaN on 4H-SiC." S. Boeykens,
M.R. Leys, M. Germain, R. Belmans, and G. Borghs, Journal of Crystal Growth,
272(1-4):312-317 (December 10, 2004). [
Abstract ]
·
Institute for Materials
Research Engineering (Singapore): "Phase separation in AlGaN/GaN
heterojunction grown by metalorganic chemical vapor deposition." P.
Chen, S.J. Chua, and Z.L. Miao, Journal of Crystal Growth,
273(1-2):74-78 (December 17, 2004). [
Abstract ]
·
Institute for Materials
Research / Pennsylvania State University: "In situ stress
measurements during MOCVD growth of AlGaN on SIC." J.D. Acord, S.
Raghavan, D.W. Snyder, and J.M. Redwing, Journal of Crystal Growth,
272(1-4):65-71 (December 10, 2004). [
Abstract ]
·
Institute of Thin Films
& Interfaces (Germany): "MOVPE GaN growth: determination of
activation energy using in-situ reflectometry." N. Kaluza, R. Steins,
H. Hardtdegen, and H. Lueth, Journal of Crystal Growth, 272(1-4):100-105
(December 10, 2004). [
Abstract ]
·
Instituto Technologico y de
Estudios Superiores de Monterrey (Mexico): "Production of AIN
films: ion nitriding versus PVD coating." U. Figueroa, O. Salas, and
J. Oseguera, Thin Solid Films, 469-70:295-303 (December 22, 2004). [
Abstract ]
·
Johannes Kepler University
(Austria): "In situ optical analysis of low temperature MOCVD GaN
nucleation layer formation via multiple wavelength ellipsometry." K.
Schmidegg, G. Neuwirt, D. Stifter, H. Sitter, and A. Bonanni, Journal of
Crystal Growth, 272(1-4):106-110 (December 10, 2004). [
Abstract ]
·
Korea Maritime University
(South Korea) / Cheju National University (South Korea) / Andong National
University (South Korea) / Nagoya University (Japan): "Metalorganic-hydride
vapor phase epitaxy growth of GaN/AIN on Si substrates." H.J. Lee,
K.H. Kim, J.Y. Yi, M. Yang, H.S. Ahn, J.H. Chang, H.S. Kim, S.N. Yi et al, Journal
of the Korean Physical Society, 45(S):S813-S815 (December 2004). [
Abstract ]
·
Korea University (South
Korea) / Kwangwoon University (South Korea) / Samsung Advanced Institute of
Technology (South Korea): "Structure optimization of InGaN-GaN
ultraviolet light-emitting diode with a low-energy electron injection mechanism."
T.G. Kim, K.C. Kim, D.H. Kim, S.H. Yoon, J.W. Lee, C.S. Sone, and Y.J. Park, Journal
of Crystal Growth, 272(1-4):264-269 (December 10, 2004). [
Abstract ]
·
Kyoto University: "Electrochemical
formation of AlN in molten LiCl-KCI-Li3N systems." T. Goto, T. Iwaki,
and Y. Ito, Electrochimica Acta, 50(6):1283-1288 (January 30, 2005). [
Abstract ]
·
Lehighton Electric Inc: "Improved
process control, lowered costs and reduced risks through the use of
non-destructive mobility and sheet carrier density measurements on GaAs and GaN
wafers." D. Nguyen, K. Hogan, A. Blew, and M. Cordes, Journal of
Crystal Growth, 272(1-4):59-64 (December 10, 2004). [
Abstract ]
·
Linkoping University
(Sweden): "Sublimation epitaxy of AlN on SiC: growth morphology
and structural features." A. Kakanakova-Georgieva, P.O.A. Persson, R.
Yakimova, L. Hultman, and E. Janzen, Journal of Crystal Growth,
273(1-2):161-166 (December 17, 2004). [
Abstract ]
·
Max Planck Inst
Kohlenforsch (Germany): "Porosity control in pre-ceramic molecular
precursor-derived GaN based materials." G. Chaplais and S. Kaskel, Journal
of Materials Chemistry, 14(6):1017-1025 (2004). [
Abstract ]
·
Meijo University (Japan): "High-quality
Al0.12Ga0.88N film with low dislocation density grown on facet-controlled
Al0.12Ga0.88N by MOVPE." T. Kawashima, K. Iida, Y. Miyake, A. Honshio,
H. Kasugai, M. Imura, M. Iwaya, S. Kamiyama et al, Journal of Crystal Growth,
272(1-4):377-380 (December 10, 2004). [
Abstract ]
·
Mitsubishi Electric Corp
(Japan): "Surface morphology and composition of GaN subjected to
photoelectrochemical etching in KOH aqueous solution." K. Shigyo, Electrochemistry,
72(12):824-826 (December 2004). [Scroll to
Abstract ]
·
Nanyang Technological
University (Singapore) / Chalmers University of Technology (Sweden): "Interface
study of AlN grown on Si substrates by radio-frequency magnetron reactive
sputtering." J.X. Zhang, Y.Z. Chen, H. Cheng, A. Uddin, S. Yuan, K.
Pita, and T.G. Andersson, Thin Solid Films, 471(1-2):336-341 (January 3, 2005). [
Abstract
available for purchase ]
·
National Chiao Tung
University (Taiwan): "Bonding line-patterned In0.5Ga0.5P layer on
GaP substrate for the successive growth of high-brightness LED structures."
P.C. Liu and Y.C.S. Wu, Electrochemical and Solid State Letters,
8(2):G31-G34 (2005). [
Abstract ]
·
National Chiao Tung
University (Taiwan) / Global Union Technology Corporation (Taiwan): "Light-output
enhancement in a nitride-based light-emitting diode with 22 degrees undercut
sidewalls." C.C. Kao, H.C. Kuo, H.W. Huang, J.T. Chu, Y.C. Peng, Y.L.
Hsieh, C.Y. Luo, S.C. Wang et al, IEEE Photonics Technology Letters,
17(1):19-21 (January 2005). [
Abstract ]
·
National Chung Cheng
University (Taiwan): "Influence of low-temperature AlGaN
intermediate multilayer structures on the growth mode and properties of GaN."
Y.L. Tsai and J.R. Gong, Optical Materials, 27(3):425-428 (December 2004). [
Abstract ]
·
National Chung Hsing
University (Taiwan) / National Formosa University (Taiwan): "Enhanced
output power of near-ultraviolet InGaN-GaN LEDs grown on patterned sapphire
substrates." D.S. Wuu, W.K. Wang, W.C. Shih, R.H. Horng, C.E. Lee,
W.Y. Lin, and J.S. Fang, IEEE Photonics Technology Letters,
17(2):288-290 (February 2005). [
Abstract ]
·
National Institute of
Advanced Science & Technology (Japan) / Meiji University (Japan): "GaN
crystal growth on sapphire substrate using islandlike GaN buffer formed by
repetition of thin-layer low-temperature deposition and annealing in rf-plasma
molecular beam epitaxy." M. Shimizu, Y. Hirata, G. Piao, and H.
Okumura, Japanese Journal of Applied Physics Part 2-Letters & Express
Letters, 43(12a):L1537-L1539 (December 1, 2004). [
Abstract ]
·
NGK Insulators Ltd (Japan)
/ Nagoya Institute of Technology (Japan): "MOVPE growth and
characterization of high-Al-content AlGaN/GaN heterostructures on
100-mm-diameter sapphire substrates." M. Miyoshi, M. Sakai, H.
Ishikawa, T. Egawa, T. Jimbo, M. Tanaka, and O. Oda, Journal of Crystal
Growth, 272(1-4):293-299 (December 10, 2004). [
Abstract ]
·
Nippon EMC Ltd (Japan): "Facet-controlled
three-step growth of high-quality GaN on sapphire substrates by
mass-production-type metalorganic vapor phase epitaxy." S. Nitta, J.
Yamamoto, Y. Koyama, Y. Ban, K. Wakao, and K. Takahashi, Journal of Crystal
Growth, 272(1-4):438-443 (December 10, 2004). [
Abstract ]
·
Nippon Sanso Corporation
(Japan): "Effects of growth pressure on AlGaN and Mg-doped GaN
grown using multiwafer metal organic vapor phase epitaxy system." H.
Tokunaga, A. Ubukata, Y. Yano, A. Yamaguchi, N. Akutsu, T. Yamasaki, and K.
Matsumoto, Journal of Crystal Growth, 272(1-4):348-352 (December 10, 2004). [
Abstract ]
·
North Carolina State
University: "Preparation and characterization of atomically clean,
stoichlometric surfaces of AIN(0001)." W.J. Mecouch, B.P. Wagner, Z.J.
Reitmeier, R.F. Davis, C. Pandarinath, B.J. Rodriguez, and R.J. Nemanich, Journal
of Vacuum Science & Technology A, 23(1):72-77 (January 2005-February 28, 2005). [
Abstract ]
·
Otto Von Guericke
University (Germany): "GaN heteroepitaxy on Si(001)." F.
Schulze, A. Dadgar, J. Blasing, and A. Krost, Journal of Crystal Growth,
272(1-4):496-499 (December 10, 2004). [
Abstract ]
·
Otto Von Guericke
University (Germany): "In situ measurements of strains and
stresses in GaN heteroepitaxy and its impact on growth temperature."
A. Dadgar, F. Schulze, T. Zettler, K. Haberland, R. Clos, G. Strassburger, J.
Blasing, A. Diez et al, Journal of Crystal Growth, 272(1-4):72-75
(December 10, 2004). [
Abstract ]
·
Peking University (China):
"Etch-pits, of GaN films with different etching methods."
M. Lu, H.Z. Fang, Z.J. Yang, H. Yang, Z.L. Li, R. Qian, G.Y. Zhang, Z. Bei et
al, Journal of the Korean Physical Society, 45(S):S673-S675 (December 2004). [
Abstract ]
·
Peking University (China) /
Shandong Normal University (China): "Two-step synthesis of
one-dimensional single crystalline GaN nanowires." L. Yang, X. Zhang,
R. Huang, G.Y. Zhang, and C.S. Xue, Physica E-Low-Dimensional Systems &
Nanostructures, 25(4):582-586 (January 2005). [
Abstract ]
·
Polish Academy of Sciences
(Poland): "Epitaxial lateral overgrowth of semiconductor
structures by liquid phase epitaxy." D. Dobosz and Z.R. Zytkiewicz, International
Journal of Materials & Product Technology, 22(1-3):50-63 (2005). [
Abstract ]
·
Polish Academy of Sciences
(Poland): "Gallium nitride growth on sapphire/GaN templates at
high pressure and high temperatures." M. Bockowski, I. Grzegory, S.
Krukowski, B. Lucznik, M. Wroblewski, G. Kamler, J. Borysiuk, P. Kwiatkowski et
al, Journal of Crystal Growth, 274(1-2):55-64 (January 15, 2005). [
Abstract ]
·
Research Center Juelich
(Germany) / Semiconductor Technology Research GmbH (Germany): "MOVPE
process for horizontal reactors with reduced parasitic deposition." H.
Hardtdegen, N. Kaluza, R. Steins, R. Schmidt, K. Wirtz, E.V. Yakovlev, R.A.
Talalaev, and Y.N. Makarov, Journal of Crystal Growth, 272(1-4):407-414
(December 10, 2004). [
Abstract ]
·
Rhein Westfal TH Aachen
(Germany) / Soitec SA (France) / Picogiga International (France) / PANalytical
Application Laboratory (Netherlands) / Aixtron AG (Germany): "Growth
and characterization of GaN-based structures on SiCOI-engineered substrates."
Y. Dikme, P. Van Gemmern, Y.C. Lin, A. Szymakowski, H. Kalisch, B. Faure, C.
Richtarch, H. Larheche et al, Journal of Crystal Growth,
272(1-4):500-505 (December 10, 2004). [
Abstract ]
·
Russian Academy of Sciences
(Russia): "Transformation of a short-wavelength emission band of a
double-charged intrinsic acceptor into a long-wavelength band in GaSb-based
LEDs." E.A. Grebenshchikova, A.N. Imenkov, B.E. Zhurtanov, T.N.
Danilova, M.A. Sipovskaya, N.V. Blasenko, and Y.P. Yakovlev, Semiconductors,
38(6):717-723 (2004). [
Abstract ]
·
Sandia National
Laboratories: "Understanding GaN nucleation layer evolution on
sapphire." D.D. Koleske, M.E. Coltrin, K.C. Cross, C.C. Mitchell, and
A.A. Allerman, Journal of Crystal Growth, 273(1-2):86-99 (December 17, 2004). [
Abstract ]
·
Sandia National
Laboratories: "Misfit dislocation formation in the AlGaN/GaN
heterointerface." J.A. Floro, D.M. Follstaedt, P. Provencio, S.J.
Hearne, and S.R. Lee, Journal of Applied Physics, 96(12):7087-7094
(December 15, 2004). [
Abstract ]
·
Sanken Electric Company Ltd
(Japan): "Role of AlN/GaN multilayer in crack-free GaN layer
growth on 5"phi Si(111) substrate." T. Sugahara, J.S. Lee, and K.
Ohtsuka, Japanese Journal of Applied Physics Part 2-Letters & Express
Letters, 43(12b):L1595-L1597 (December 15, 2004). [
Abstract ]
·
Soft Impact Ltd (Russia) /
Semiconductor Technology Research GmbH (Germany) / Russian Academy of Sciences
(Russia): "Aluminum incorporation control in AlGaN MOVPE:
experimental and modeling study." A.V. Kondratyev, R.A. Talalaev, W.V.
Lundin, A.V. Sakharov, A.V. Tsatsul'nikov, E.E. Zavarin, A.V. Fomin, and D.S.
Sizov, Journal of Crystal Growth, 272(1-4):420-425 (December 10, 2004). [
Abstract ]
·
Sophia University (Japan):
"InGaN/GaN multiple quantum disk nanocolumn light-emitting diodes
grown on (111)Si substrate." A. Kikuchi, M. Kawai, M. Tada, and K.
Kishino, Japanese Journal of Applied Physics Part 2-Letters & Express
Letters, 43(12a):L1524-L1526 (December 1, 2004). [
Abstract ]
·
Taiyo Nippon Sanso
Corporation (Japan) / Kyoto University (Japan): "Growth mechanism
of atmospheric pressure MOVPE of GaN and its alloys: gas phase chemistry and
its impact on reactor design." K. Matsumoto and A. Tachibana, Journal
of Crystal Growth, 272(1-4):360-369 (December 10, 2004). [
Abstract ]
·
Technical University Carolo
Wilhelmina Braunschweig (Germany) / Otto Von Guericke University (Germany) /
Technical University of Ilmenau (Germany): "Growth of
AlxGa1-xN-layers on planar and patterned substrates." U. Rossow, D.
Fuhrmann, M. Greve, J. Blasing, A. Krost, G. Ecke, N. Riedel, and A.
Hangleiter, Journal of Crystal Growth, 272(1-4):506-514 (December 10, 2004). [
Abstract ]
·
Technical University of
Berlin (Germany): "InN growth and annealing investigations using
in-situ spectroscopic ellipsometry." M. Drago, T. Schmidtling, C.
Werner, M. Pristovsek, U.W. Pohl, and W. Richter, Journal of Crystal Growth,
272(1-4):87-93 (December 10, 2004). [
Abstract ]
·
Technical University of
Berlin (Germany): "Optimization of GaN MOVPE growth on patterned
Si substrates using spectroscopic in situ reflectance." A.
Strittmatter, L. Reissmann, T. Trepk, U.W. Pohl, D. Bimberg, and J.T. Zettler, Journal
of Crystal Growth, 272(1-4):76-80 (December 10, 2004). [
Abstract ]
·
Technical University of
Berlin (Germany) / University of Karlsruhe (Germany): "Influence
of the reactor total pressure on optical properties of MOCVD grown InGaN layers."
A. Strittmatter, L. Reissmann, R. Seguin, S. Rodt, A. Brostowski, U.W. Pohl, D.
Bimberg, E. Hahn et al, Journal of Crystal Growth, 272(1-4):415-419
(December 10, 2004). [
Abstract ]
·
Tokyo University of
Agriculture & Technology (Japan): "Thermodynamic analysis of
InN and InxGa1-xN MOVPE using various nitrogen sources." Y. Kumagai,
J. Kikuchi, Y. Matsuo, Y. Kangawa, K. Tanaka, and A. Koukitu, Journal of
Crystal Growth, 272(1-4):341-347 (December 10, 2004). [
Abstract ]
·
Tokyo University of
Agriculture & Technology (Japan) / Ishikawajima Harima Heavy Industries Co
Ltd (Japan): "Influence of laser power on crystalline quality of
InGaN with high indium content grown by pulse laser-assisted MOVPE."
Y. Kangawa, N. Kawaguchi, Y. Kumagai, and A. Koukitua, Journal of Crystal
Growth, 272(1-4):444-448 (December 10, 2004). [
Abstract ]
·
Toyohashi University of
Technology (Japan) / NGK Insulators Ltd (Japan): "Growth and
characterization of AlInN on AlN template." T. Fujimori, H. Imai, A.
Wakahara, H. Okada, A. Yoshida, T. Shibata, and M. Tanaka, Journal of
Crystal Growth, 272(1-4):381-385 (December 10, 2004). [
Abstract ]
·
University of Bourgogne
(France) / University of Grenoble (France) / RSA Le Rubis SA (France): "Optical
and structural studies of GaN 3D structures selectively grown by MOCVD."
P. Viste, I. Colombier, F. Donatini, J.C. Vial, P. Baldeck, R. Herino, A.
Duc-Mauge, J. Godfroyd et al, Journal of Crystal Growth,
272(1-4):466-474 (December 10, 2004). [
Abstract ]
·
University of
California-Berkeley: "Nucleation and growth of InN thin films
using conventional and pulsed MOVPE." M.C. Johnson, S.L. Konsek, A.
Zettl, and E.D. Bourret-Courchesne, Journal of Crystal Growth,
272(1-4):400-406 (December 10, 2004). [
Abstract ]
·
University of
California-Santa Barbara: "Growth of AlN by the chemical vapor
reaction process and its application to lateral overgrowth on patterned
sapphire substrates." K. Fujito, T. Hashimoto, K. Samonji, J.S. Speck,
and S. Nakamura, Journal of Crystal Growth, 272(1-4):370-376 (December
10, 2004). [
Abstract ]
·
University of
California-Santa Barbara / AF Ioffe Physico-Technical Institute (Russia): "Structural
and morphological evolution of GaN grown by metalorganic chemical vapor
deposition on SiC substrates using an AlN initial layer." B. Moran, F.
Wu, A.E. Romanov, U.K. Mishra, S.P. Denbaars, and J.S. Speck, Journal of
Crystal Growth, 273(1-2):38-47 (December 17, 2004). [
Abstract ]
·
University of Cambridge
(UK): "Strain effects of AIN interlayers for MOVPE growth of
crack-free AlGaN and AIN/GaN multilayers on GaN." C. Mcaleese, M.J.
Kappers, F.D.G. Rayment, P. Cherns, and C.J. Humphreys, Journal of Crystal
Growth, 272(1-4):475-480 (December 10, 2004). [
Abstract ]
·
University of Cambridge
(UK) / University of Oxford (UK): "The influence of ammonia on the
growth mode in InGaN/GaN heteroepitaxy." R.A. Oliver, M.J. Kappers,
C.J. Humphreys, and G.A.D. Briggs, Journal of Crystal Growth,
272(1-4):393-399 (December 10, 2004). [
Abstract ]
·
University of Florida: "Growth
and characterization of single-crystalline gallium nitride using (100) LiAlO2
substrates." M.D. Reed, O.M. Kryliouk, M.A. Mastro, and T.J. Anderson,
Journal of Crystal Growth, 274(1-2):14-20 (January 15, 2005). [
Abstract ]
·
University of New Mexico: "Phase
control of GaN on Si by nanoscale faceting in metalorganic vapor-phase epitaxy."
S.C. Lee, X.Y. Sun, S.D. Hersee, and S.R.J. Brueck, Journal of Crystal
Growth, 272(1-4):2-8 (December 10, 2004). [
Abstract ]
·
University of Nijmegen
(Netherlands) / Polish Academy of Sciences (Poland): "Influence of
the nucleation layer morphology and epilayer structure on the resistivity of
GaN films grown on c-plane sapphire by MOCVD." A.P. Grzegorczyk, L.
Macht, P.R. Hageman, J.L. Weyher, and P.K. Larsen, Journal of Crystal Growth,
273(3-4):424-430 (January 3, 2005). [
Abstract ]
·
University of Orleans
(France) / University of Paris (France): "Improvement of the PLD
process assisted by RF plasma for AlN growth." A. Basillais, R.
Benzerga, H. Sanchez, E. Le Menn, C. Boulmer-Leborgne, and J. Perriere, Applied
Physics A-Materials Science & Processing, 80(4):851-859 (February 2005). [
Abstract ]
·
University of
Pennsylvania: "Effect of the polar surface on GaN nanostructure
morphology and growth orientation." C.Y. Nam, D. Tham, and J.E.
Fischer, Applied Physics Letters, 85(23):5676-5678 (December 6, 2004). [
Abstract ]
·
University of Stuttgart
(Germany): "Characterisation of quaternary AlInGaN thick layers
and quantum wells grown by MOVPE." V. Perez-Solorzano, A. Groening, R.
Haerle, H. Schweizer, and M. Jetter, Journal of Crystal Growth,
272(1-4):386-392 (December 10, 2004). [
Abstract ]
·
University of Stuttgart
(Germany): "Selective growth of GaInN quantum dot structures."
M. Jetter, V. Perez-Solorzano, A. Groening, M. Ubl, H. Graebeldinger, and H.
Schweizer, Journal of Crystal Growth, 272(1-4):204-210 (December 10, 2004). [
Abstract ]
·
University of Tokyo
(Japan): "Formation of high-density GaN self-assembled quantum
dots by MOCVD." K. Hoshino and Y. Arakawa, Journal of Crystal
Growth, 272(1-4):161-166 (December 10, 2004). [
Abstract ]
·
University of Tsukuba
(Japan) / JST (Japan) / RIKEN Institute of Physical & Chemical Research
(Japan) / NIMS (Japan) / Tokyo Institute of Technology (Japan) / University of
Shizuoka (Japan): "Reduction of point defect density in cubic GaN
epilayers on (001) GaAs substrates using AlxGa1-xN/GaN superlattice
underlayers." S.F. Chichibu, M. Sugiyama, T. Nozaka, T. Suzuki, T.
Onuma, K. Nakajima, T. Aoyama, M. Sumiya et al, Journal of Crystal Growth,
272(1-4):481-488 (December 10, 2004). [
Abstract ]
·
University of Ulm
(Germany): "Marker layers for the development of a multistep
GaNFACELO process." F. Habel, P. Bruckner, and F. Scholz, Journal
of Crystal Growth, 272(1-4):515-519 (December 10, 2004). [
Abstract ]
·
University of Wisconsin: "Antimony
as a surfactant during the growth of GaN-based GaNAs alloys by metal organic
vapor-phase epitaxy." A. Kimura, Z.Y. Liu, and T.F. Kuech, Journal
of Crystal Growth, 272(1-4):432-437 (December 10, 2004). [
Abstract ]
·
US Air Force / University
of Dayton: "Optical study of implantation damage recovery from
Si-implanted GaN." J.A. Fellows, Y.K. Yeo, M.Y. Ryu, and R.L.
Hengehold, Solid State Communications, 133(4):213-217 (January 2005). [
Abstract ]
·
Veeco TurboDisc
Operations: "In situ metrology advances in MOCVD growth of
GaN-based materials." M. Belousov, B. Volf, J.C. Ramer, E.A. Armour,
and A. Gurary, Journal of Crystal Growth, 272(1-4):94-99 (December 10, 2004). [
Abstract ]
·
Veeco TurboDisc Operations
/ Rutgers State University: "Sapphire substrate misorientation
effects on GaN nucleation layer properties." D. Lu, D.I. Florescu,
D.S. Lee, V. Merai, J.C. Ramer, A. Parekh, and E.A. Armour, Journal of
Crystal Growth, 272(1-4):353-359 (December 10, 2004). [
Abstract ]
· Yantai University (China): "Fabrication and optical property of silicon oxide layer coated semiconductor gallium nitride nanowires." J. Zhang, L.D. Zhang, F.H. Jiang, Y.D. Yang, and J.P. Li, Journal of Physical Chemistry B, 109(1):151-154 (January 13, 2005). [ Abstract ] B. Materials and Device Design Properties
·
AF Ioffe Physico-Technico
Institute (Russia) / Institute for Chemical Problems of Microelectronics
(Russia): "Influence of extended structural defects on the
characteristics of electroluminescence in efficient silicon light-emitting diodes."
N.A. Sobolev, A.M. Emel'yanov, E.I. Shek, and V.I. Vdovin, Gettering and
Defect Engineering in Semiconductor Technology, 95-96:283-288 (2004). [Scroll
to
Abstract ]
·
AF Ioffe Physico-Technico
Institute (Russia): "Efficiency improvement of AlGaInN LEDs
advanced by ray-tracing analysis." V. Zabelin, D.A. Zakheim, and S.A.
Gurevich, IEEE Journal of Quantum Electronics, 40(12):1675-1686
(December 2004). [
Abstract ]
·
Center for Materials
Information Technology (India) / Korea Research Institute of Standards &
Science (South Korea) / Chungbuk National University (South Korea) / Yonsei
University (South Korea): "Blue luminescence from the InGaN
multiple quantum wells." A.K. Viswanath, J.I. Lee, S.T. Kim, G.M.
Yang, H.J. Lee, and D. Kim, Physica E-Low-Dimensional Systems &
Nanostructures, 25(4):390-394 (January 2005). [
Abstract ]
·
Chinese Academy of Sciences
(China): "Origin of the blueshift in the infrared absorbance of
intersubband transitions in AlxGa1-x/GaN multiple quantum wells." J.M.
Li, X. Han, J.J. Wu, X.L. Liu, Q.S. Zhu, and Z.G. Wang, Physica E-Low-Dimensional
Systems & Nanostructures, 25(4):575-581 (January 2005). [
Abstract ]
·
Chinese Academy of Sciences
(China) / Peking University (China): "Depth distribution of the
strain in the GaN layer with low-temperature AlN interlayer on Si(111)
substrate studied by Rutherford backscattering/channeling." Y. Lu,
G.W. Cong, X.L. Liu, D.C. Lu, Z.G. Wang, and M.F. Wu, Applied Physics
Letters, 85(23):5562-5564 (December 6, 2004). [
Abstract ]
·
Chungbuk National
University (South Korea) / Dongguk University (South Korea) / Seoul National
University (South Korea): "Optical properties of In-rich InGaN/GaN
single quantum well structures with high density of clusters." Y.P.
Sun, Y.H. Cho, H.M. Kim, T.W. Kang, S.Y. Kwon, and E. Yoon, Journal of the
Korean Physical Society, 45(S):S615-S617 (December 2004). [
Abstract ]
·
CNRS (France): "Optical
properties of high-Al-content crack free Al(x)Ga1-N-x (x < 0.67) films
grown on Si(111) by molecular-beam epitaxy." F. Natali, D. Byrne, M.
Leroux, F. Semond, and J. Massies, Solid State Communications,
132(10):679-682 (December 2004). [
Abstract ]
·
Defense Research &
Development Canada (Canada) / University of Montreal (Canada) / National
Research Council Canada (Canada): "Proton radiation damage at low
temperature in GaAs and GaN light-emitting diodes." S.M. Khanna, D.
Estan, A. Houdayer, H.C. Liu, and R. Dudek, IEEE Transactions on Nuclear
Science, 51(6):2, P.3585-3594 (December 2004). [
Abstract ]
·
Dongguk University (South
Korea) / Hanyang University (South Korea): "Photoluminescence
studies of GaN nanorods on Si (111) substrates grown by molecular-beam epitaxy."
Y.S. Park, C.M. Park, D.J. Fu, T.W. Kang, and J.E. Oh, Applied Physics
Letters, 85(23):5718-5720 (December 6, 2004). [
Abstract ]
·
Dublin City University
(Ireland) / Lawrence Berkeley Laboratory / State University Ghent (Belgium) /
Thomas Swan & Company Ltd (UK): "Evaluation of the optical
properties of epitaxial lateral overgrown gallium nitride on sapphire and the
role of optically active metastable defects using cathodoluminescence and
photoluminescence spectroscopy." B.J. Ryan, D.P. Lowney, M.O. Henry,
P.J. Mcnally, E. Mcglynn, K. Jacobs, and L. Considine, Thin Solid Films,
473(2):308-314 (February 14, 2005). [
Abstract ]
·
Electronics &
Telecommunications Research Institute (South Korea): "Variational
method for the lowest conduction subband of undoped AlGaN/GaN single
heterojunctions." K.S. Lee, Journal of the Korean Physical Society,
45(6):1683-1686 (December 2004). [
Abstract ]
·
Hanyang University (South
Korea) / Kyungpook National University (South Korea) / Korea Advanced Institute
of Science & Technology (South Korea): "Microstructural
properties and atomic arrangements in GaN/sapphire and
AlxGa1-xN/AlN/GaN/sapphire heterostructures." T.W. Kim, D.U. Lee, H.S.
Lee, J.Y. Lee, J.H. Lee, and J.H. Lee, Journal of Applied Physics,
96(12):7118-7121 (December 15, 2004). [
Abstract ]
·
Hanyang University (South
Korea) / National Institute of Advanced Industrial Science & Technology
(Japan): "Blue luminescence from amorphous GaN films deposited by
pulsed-laser ablation at room temperature." S.H. Shim, K.B. Shim, J.W.
Yoon, Y. Shimizu, T. Sasaki, and N. Koshizaki, Thin Solid Films,
472(1-2):11-15 (January 24, 2005). [
Abstract ]
·
Hong Kong University of
Science & Technology (China) / Rhein Westfal TH Aachen (Germany) / Aixtron
AG (Germany): "Characterization of GaN grown on patterned Si(111)
substrates." D. Wang, Y. Dikme, S. Jia, K.J. Chen, K.M. Lau, P. Van
Gemmern, Y.C. Lin, H. Kalisch et al, Journal of Crystal Growth,
272(1-4):489-495 (December 10, 2004). [
Abstract ]
·
Hosei University (Japan): "Filled
tetrahedral semiconductor Li3AlN2 studied with optical absorption: Application
of the interstitial insertion rule." K. Kushida, Y. Kaneko, and K.
Kuriyama, Physical Review B, 70(23):233303 (December 2004). [
Abstract ]
·
Institute of Materials
Research & Engineering (Singapore) / NUS (Singapore): "Effects
of periodic delta-doping on the properties of GaN: Si films grown on Si(111)
substrates." L.S. Wang, K.Y. Zang, S. Tripathy, and S.J. Chua, Applied
Physics Letters, 85(24):5881-5883 (December 13, 2004). [
Abstract ]
·
Institute of Materials
Research & Engineering (Singapore) / Sumitomo Electric Industries Ltd
(Japan): "Near-field optical characterization of GaN and
InxGa1-xN/GaN heterostructures grown on freestanding GaN substrates."
S.J. Chua, S. Tripathy, P. Chen, E. Takasuka, and M. Ueno, Physica
E-Low-Dimensional Systems & Nanostructures, 25(4):356-365 (January 2005). [
Abstract ]
·
Korea Basic Science
Institute (South Korea) / Korea University (South Korea): "Effects
of extended dislocations on charge distribution in GaN epilayer." H.
Choi, E.K. Koh, Y.M. Cho, J. Jin, D. Byun, and M. Yoon, Microelectronics
Journal, 36(1):25-28 (January 2005). [
Abstract ]
·
Korea Maritime University
(South Korea) / Cheju National University (South Korea) / Andong National
University (South Korea): "Effect of interface on the optical
properties of GaN grown by HVPE." S.N. Yi, H.S. Ahn, M. Yang, K.H.
Kim, H. Kim, J.Y. Yi, J.H. Chang, H.S. Kim et al, Journal of the Korean
Physical Society, 45(S):S598-S600 (December 2004). [
Abstract ]
·
Korea Research Institute of
Standards & Science (South Korea) / Samsung Electro-Mechanics Company Ltd
(South Korea) / Mokwon University (South Korea): "Structural and
optical characterizations of InxGa1-xN/GaN (0.15 ≤ x ≤ 0.30)
multi-quantum well structures." C.S. Kim, S.J. Lee, S.K. Noh, K. Lee,
S. Kim, K.J. Lee, and Y.D. Choi, Journal of the Korean Physical Society,
45(S):S509-S512 (December 2004). [
Abstract ]
·
Kyushu University (Japan) /
Fuji Xerox Company Ltd (Japan): "Effects of Mg doping on growth
and structures of polycrystalline GaN by remote plasma MOCVD." T.
Iwanaga, S. Yagi, Y. Ikoma, and T. Motooka, Journal of Crystal Growth,
274(1-2):1-5 (January 15, 2005). [
Abstract ]
·
Linkoping University
(Sweden) / Macquarie University (Australia) / Chalmers University of Technology
(Sweden) / Polish Academy of Sciences (Poland) / Helsinki University of
Technology (Finland) / HMA (Sweden): "Characterization of
mass-transport grown GaN by hydride vapour-phase epitaxy." T. Paskova,
P.P. Paskov, E.M. Goldys, E. Valcheva, V. Darakchieva, U. Sodervall, M.
Godlewski, M. Zielinski et al, Journal of Crystal Growth,
273(1-2):118-128 (December 17, 2004). [
Abstract ]
·
Nagoya Institute of
Technology (Japan): "Characterization of GaInN light-emitting
diodes with distributed Bragg reflector grown on Si." H. Ishikawa, B.
Zhang, K. Asano, T. Egawa, and T. Jimbo, Journal of Crystal Growth,
272(1-4):322-326 (December 10, 2004). [
Abstract ]
·
Nanjing University (China)
/ Chinese Academy of Sciences (China) / University of Tokyo (Japan): "Quantum
and transport scattering times in modulation-doped AlxGa1-xN/GaN single quantum
wells." Z.W. Zheng, B. Shen, Z.J. Qiu, Y.S. Gui, N. Tang, J. Liu, D.J.
Chen, R. Zhang et al, Applied Physics A-Materials Science & Processing,
80(1):39-42 (January 2005). [
Abstract ]
·
National Chung Cheng
University (Taiwan) / South Taiwan University of Technology (Taiwan): "Molecular
dynamics investigation of the mechanical properties of gallium nitride
nanotubes under tension and fatigue." Y.R. Jeng, P.C. Tsai, and T.H.
Fang, Nanotechnology, 15(12):1737-1744 (December 2004). [
Abstract ]
·
National Institute for
Advance Science & Technology (Japan) / Hanyang University (South Korea): "Quantum
confinement effect of nanocrystalline GaN films prepared by pulsed-laser
ablation under various Ar pressures." J.W. Yoon, T. Sasaki, C.H. Roh,
S.H. Shim, K.B. Shim, and N. Koshizaki, Thin Solid Films, 471(1-2):273-276
(January 3, 2005). [
Abstract ]
·
National Taiwan University
(Taiwan) / National Sun Yat Sen University (Taiwan): "Exchange-enhanced
g-factors in an Al0.25Ga0.75N/GaN two-dimensional electron system."
K.S. Cho, T.Y. Huang, C.P. Huang, Y.H. Chiu, C.T. Liang, Y.F. Chen, and I. Lo, Journal
of Applied Physics, 96(12):7370-7373 (December 15, 2004). [
Abstract ]
·
Pacific Northwest National
Laboratory: "Wannier orbitals and bonding properties of
interstitial and antisite defects in GaN." F. Gao, E.J. Bylaska, A.
El-Azab, and W.J. Weber, Applied Physics Letters, 85(23):5565-5567
(December 6, 2004). [
Abstract ]
·
Paul Drude Institut fur
Festkorperelekt (Germany): "Polarization filtering by nonpolar
M-plane GaN films on LiAlO2." P. Misra, Y.J. Sun, O. Brandt, and H.T.
Grahn, Journal of Applied Physics, 96(12):7029-7035 (December 15, 2004). [
Abstract ]
·
Qinetiq (UK): "Composition
measurement in strained AlGaN epitaxial layers using x-ray diffraction."
D.J. Wallis, A.M. Keir, R.S. Balmer, D.E.J. Soley, and T. Martin, Applied
Physics Letters, 85(26):6359-6361 (December 27, 2004). [
Abstract ]
·
Research Institute of
Applied Physics (Iran) / University of Western Australia (Australia): "The
effects of GaN capping layer thickness on two-dimensional electron mobility in
GaN/AlGaN/GaN heterostructures." A. Asgari, M. Kalafi, and L. Faraone,
Physica E-Low-Dimensional Systems & Nanostructures, 25(4):431-437
(January 2005). [
Abstract ]
·
Samsung Advanced Institute
of Technology (South Korea) / Seoul National University (South Korea) /
Chungbuk National University (South Korea): "Investigation of
optical and electrical properties of Mg-doped p-InxGa1-xN, p-GaN and
p-AlyGa1-yN grown by MOCVD." S.N. Lee, J. Son, T. Sakong, W. Lee, H.
Paek, E. Yoon, J. Kim, Y.H. Cho et al, Journal of Crystal Growth,
272(1-4):455-459 (December 10, 2004). [
Abstract ]
·
Sandia National
Laboratories / Arizona State University: "In situ measurements of
the critical thickness for strain relaxation in AlGaN/GaN heterostructures."
S.R. Lee, D.D. Koleske, K.C. Cross, J.A. Floro, K.E. Waldrip, A.T. Wise, and S.
Mahajan, Applied Physics Letters, 85(25):6164-6166 (December 20, 2004). [
Abstract ]
·
Sensor Electric Technology
Inc / University of South Carolina: "AlGaN-based 280 nm
light-emitting diodes with continuous-wave power exceeding 1 mW at 25 mA."
J.P. Zhang, X. Hu, Y. Bilenko, J. Deng, A. Lunev, M.S. Shur, R. Gaska, M.
Shatalov et al, Applied Physics Letters, 85(23):5532-5534 (December 6, 2004). [
Abstract ]
·
Silla University (South
Korea) / KIST (South Korea) / Korea University (South Korea) / Toyohashi
University of Technology (Japan) / AIST (Japan): "Red emission
from Eu-implanted GaN." C.S. Son, S.I. Kim, Y.H. Kim, Y.T. Kim, I.H.
Choi, A. Wakahara, H. Tanoue, and M. Ogura, Journal of the Korean Physical
Society, 45(S):S519-S521 (December 2004). [
Abstract ]
·
Soft Impact Ltd (Russia) /
St Petersburg Branch Joint Supercomputer Center (Russia): "Statistical
model of ternary group-III nitrides." S.Y. Karpov, N.I. Podolskaya,
I.A. Zhmakin, and A.I. Zhmakin, Physical Review B, 70(23):235203
(December 2004). [
Abstract ]
·
Sumitomo Electric
Industries Ltd (Japan) / RIKEN (Japan): "Advantages of GaN
substrates in InAlGaN quaternary ultraviolet-light-emitting diodes."
K. Akita, T. Nakamura, and H. Hirayama, Japanese Journal of Applied Physics
Part 1-Regular Papers Short Notes & Review Papers, 43(12):8030-8031
(December 2004). [
Abstract ]
·
Technical University of
Lodz (Poland) / University of New Mexico: "The modified k.p
method to investigate polarization effects in nitride quantum-well devices."
J. Galczak, R.P. Sarzala, and W. Nakwaski, Physica E-Low-Dimensional Systems
& Nanostructures, 25(4):504-514 (January 2005). [
Abstract ]
·
TH Darmstadt (Germany) /
Osram Opto Semiconductors GmbH (Germany): "Resonant-cavity
light-emitting diodes: quantum noise and spatial emission characteristics."
R.H. Birkner, J. Kaiser, W. Elsasser, and C. Jung, Applied Physics B-Lasers
and Optics, 79(8):963-967 (December 2004). [
Abstract ]
·
University of Calcutta
(India): "Effect of polarization on two-dimensional carrier
distribution in nitride quantum wells." B. Lahiri, R. Datta, and S.
Kundu, Physica E-Low-Dimensional Systems & Nanostructures,
25(4):449-455 (January 2005). [
Abstract ]
·
University of Dayton / US
Air Force: "Electrical activation studies of Si-implanted
Al(x)G(1-x)N as a function of ion dose, anneal temperature and anneal time."
M.Y. Ryu, Y.K. Yeo, E.A. Moore, and R.L. Hengehold, Journal of the Korean
Physical Society, 45(S):S522-S525 (December 2004). [
Abstract ]
·
University of Magdeburg
(Germany): "Impact of thermal annealing on the characteristics of
InGaN/GaN LEDs on Si(111)." K. Fehse, A. Dadgar, A. Krtschil, T.
Riemann, T. Hempel, J. Christen, and A. Krost, Journal of Crystal Growth,
272(1-4):251-256 (December 10, 2004). [
Abstract ]
·
University of Metz (France)
/ University of Montpellier (France): "Does in-bonding delay
GaN-segregation in GaInAsN? A Raman study." T. Tite, O. Pages, and E.
Tournie, Applied Physics Letters, 85(24) December 13, 2004). [
Abstract ]
·
University of North Texas /
Virginia Commonwealth University / Waseda University (Japan): "Coupling
of spontaneous emission from GaN-AlN quantum dots into silver surface plasmons."
A. Neogi, H. Morkoc, T. Kuroda, and A. Tackeuchi, Optics Letters,
30(1):93-95 (January 1, 2005). [
Abstract ]
·
University of Sains
(Malaysia) / Ohio University / Spire Corporation: "Characteristics
of low-temperature-grown GaN films on Si(111) ." Z. Hassan, Y.C. Lee,
F.K. Yam, K. Ibrahim, M.E. Kordesch, W. Halverson, and P.C. Colter, Solid
State Communications, 133(5):283-287 (February 2005). [
Abstract ]
·
University of Science &
Technology (China): "First-principle study on GaN(1010) surface
structure." Y.H. Li, P.S. Xu, H.B. Pan, F.Q. Xu, and C.K. Xie, Acta
Physica Sinica, 54(1):317-322 (January 2005). [No URL available]
·
University of Sheffield
(UK) / Tianjin University (China): "Study of stimulated emission
from InGaN/GaN multiple quantum well structures." T. Wang, P.J.
Parbrook, M.A. Whitehead, W.H. Fan, and A.M. Fox, Journal of Crystal Growth,
273(1-2):48-53 (December 17, 2004). [
Abstract ]
·
University of Strathclyde
(UK) / National University of Singapore (Singapore): "Exposure of
defects in GaN by plasma etching." H.W. Choi, C. Liu, M.G. Cheong, J.
Zhang, and S.J. Chua, Applied Physics A-Materials Science & Processing,
80(2):405-407 (February 2005). [
Abstract ]
·
University of Washington: "Structural,
optical and electrical properties of GaN and InGaN films grown by MOCVD."
K. Poochinda, T.C. Chen, T.G. Stoebe, and N.L. Ricker, Journal of Crystal
Growth, 272(1-4):460-465 (December 10, 2004). [
Abstract ]
·
US Navy Research
Laboratory: "Theoretical study of the influence of strain and
polarization on performance of AlGaN/4H-SiC HBT." M.A. Mastro, C.R.
Eddy, N.D. Bassim, M.E. Twigg, A. Edwards, R.L. Henry, and R.H. Holm, Solid-State
Electronics, 49(2):251-256 (February 2005). [
Abstract ]
·
US Navy Research Laboratory
/ University of Florida / NIST: "Influence of polarity on GaN
thermal stability." M.A. Mastro, O.M. Kryliouk, T.J. Anderson, A.
Davydov, and A. Shapiro, Journal of Crystal Growth, 274(1-2):38-46
(January 15, 2005). [
Abstract ]
·
Veeco TurboDisc
Operations: "AFM and temperature-dependent photoluminescence
studies of the degree of localization induced by quantum-dot like states in
InGaN single quantum well light emitting diodes grown by MOCVD on (0001)
sapphire." D.I. Florescu, J.C. Ramer, V.N. Merai, A. Parekh, D. Lu,
D.S. Lee, and E.A. Armour, Journal of Crystal Growth, 272(1-4):449-454
(December 10, 2004). [
Abstract ]
·
Vilnius State University
(Lithuania) / Rensselaer Polytechnic Institute / Sensor Electronic Technology
Inc / University of South Carolina: "Lifetime of nonequilibrium
carriers in high-Al-content AlGaN epilayers ." J. Mickevicius, R.
Aleksiejunas, M.S. Shur, G. Tamulaitis, R.S.Q. Fareed, J.P. Zhang, R. Gaska,
and M.A. Khan, Physica Status Solidi A-Applied Research, 202(1):126-130
(January 2005). [
Abstract ]
· Wuhan University (China): "Studies of the third-order nonlinear optical susceptibility for InxGa1-xN/GaN cylinder quantum dots." L.M. Liu, J.J. Li, and G.G. Xiong, Physica E-Low-Dimensional Systems & Nanostructures, 25(4):466-471 (January 2005). [ Abstract ] C. Packaging and Reliability
·
Arizona State University /
Nichia Corporation (Japan): "Atomic arrangement at the Au/p-GaN
interface in low-resistance contacts." H. Omiya, F.A. Ponce, H. Marui,
S. Tanaka, and T. Mukai, Applied Physics Letters, 85(25):6143-6145
(December 20, 2004). [
Abstract ]
·
Chang Gung University
(Taiwan): "Application of modified transmission line model to
measure p-type GaN contact." N.C. Chen, C.Y. Tseng, A.P. Chiu, C.F.
Shih, and P.H. Chang, Applied Physics Letters, 85(25):6086-6088
(December 20, 2004). [
Abstract ]
·
Chinese Academy of Sciences
(China): "A mesoporous template route to the low-temperature
preparation of efficient green light emitting Zn2SiO4: Mn phosphors."
L.M. Xiong, J.L. Shi, J.L. Gu, L. Li, W.M. Huang, J.H. Gao, and M.L. Ruan, Journal
of Physical Chemistry B, 109(2):731-735 (January 20, 2005). [
Abstract ]
·
Da Yeh University (Taiwan)
/ National Cheng Kung University (Taiwan): "A novel transparent
ohmic contact of indium tin oxide to n-type GaN." J.D. Hwang, G.H.
Yang, W.T. Chang, C.C. Lin, R.W. Chuang, and S.J. Chang, Microelectronic
Engineering, 77(1):71-75 (January 2005). [
Abstract ]
·
General Research Institute
for Nonferrous Metals & Grirem Advanced Materials Company Ltd (China) /
Central South University (China): "Preparation and luminescent
properties of (Ca1-xSr,)S: Eu2+ red-emitting phosphor for white LED."
Y.S. Hu, W.D. Zhuang, H.Q. Ye, S.S. Zhang, Y. Fang, and X.W. Huang, Journal
of Luminescence, 111(3):139-145 (February 2005). [
Abstract ]
·
Gwangju Institute of
Science & Technology (South Korea): "Highly transparent
Ag/SnO2 ohmic contact to p-type GaN for ultraviolet light-emitting diodes."
J.O. Song and T.Y. Seong, Applied Physics Letters, 85(26):6374-6376
(December 27, 2004). [
Abstract ]
·
Gwangju Institute of
Science & Technology (South Korea): "Low-resistivity and
transparent indium-oxide-doped ZnO ohmic contact to p-type GaN." J.H.
Lim, D.K. Hwang, H.S. Kim, J.Y. Oh, J.H. Yang, R. Navamathavan, and S.J. Park, Applied
Physics Letters, 85(25):6191-6193 (December 20, 2004). [
Abstract ]
·
Gwangju Institute of
Science & Technology (South Korea) / Samsung Advanced Institute of
Technology (South Korea) / Samsung Electro-Mechanics Company Ltd (South
Korea): "Improvement of the luminous intensity of light-emitting
diodes by using highly transparent Ag-indium tin oxide p-type ohmic contacts."
J.O. Song, D.S. Leem, J.S. Kwak, Y. Park, S.W. Chae, and T.Y. Seong, IEEE
Photonics Technology Letters, 17(2):291-293 (February 2005). [
Abstract ]
·
Kwang-ju Institute of
Science & Technology (South Korea) / LG Innotek (South Korea): "Low
resistance and high reflectance Pt/Rh contacts to p-type GaN for GaN-based flip
chip light-emitting diodes." J.R. Lee, S.I. Na, J.H. Jeong, S.N. Lee,
J.S. Jang, S.H. Lee, J.J. Jung, J.O. Song et al, Journal of the
Electrochemical Society, 152(1):G92-G94 (2005). [
Abstract ]
·
Pennsylvania State
University / Georgia Institute of Technology: "Ohmic contacts to
p-type Al0.45Ga0.55N." B.A. Hull, S.E. Mohney, U. Chowdhury, and R.D.
Dupuis, Journal of Applied Physics, 96(12):7325-7331 (December 15, 2004). [
Abstract ]
·
Pohang University of
Science & Technology (South Korea): "Mechanism for ohmic
contact formation of Ni/Ag contacts on p-type GaN." H.W. Jang and J.L.
Lee, Applied Physics Letters, 85(24):5920-5922 (December 13, 2004). [
Abstract ]
·
Seoul National University (South
Korea) / Gwangju Institute of Science & Technology (South Korea): "Y3Al5O12:
Ce-0.05 phosphor coatings on a flexible substrate for use in white
light-emitting diodes." J.H. Yum, S.S. Kim, and Y.E. Sung, Colloids
and Surfaces A-Physicochemical and Engineering Aspects, 251(1-3):203-207 (Dec
20 2004). [
Abstract ]
·
Sumitomo Electric
Industries Ltd (Japan) / Tottori University (Japan): "The role of
N-related point defects in the degradation process of ZnSe-based white
light-emitting diodes." K. Katayama, M. Adachi, T. Abe, A. Urata, S.
Tsutsumi, N. Inoue, T. Nakamura, and K. Ando, Journal of Applied Physics,
96(11):6789-6793 (December 1, 2004). [
Abstract ]
·
Sunchon National University
(South Korea) / Pohang Accelerator Laboratory (South Korea): "Genetic
algorithm-assisted combinatorial search for new red phosphors of high
efficiency at soft ultraviolet excitation." K.S. Sohn, B.I. Kim, and
N. Shin, Journal of the Electrochemical Society, 151(12):H243-H248
(2004). [
Abstract ]
·
University of Cincinnati /
Extreme Photonix LLC / Cranfield University (UK) / Intel Corporation / Oregon
State University: "High brightness ZnS and GaN electroluminescent
devices using PZT thick dielectric layers." C. Munasinghe, J.
Heikenfeld, R. Dorey, R. Whatmore, J.P. Bender, J.F. Wager, and A.J. Steckl, IEEE
Transactions on Electron Devices, 52(2):194-203 (February 2005). [
Abstract ]
· Yonsei University (South Korea): "Emission color variation of M2SiO4: Eu2+ (M=Ba, Sr, Ca) phosphors for light-emitting diode." J.S. Kim, P.E. Jeon, J.C. Choi, and H.L. Park, Solid State Communications, 133(3):187-190 (January 2005). [ Abstract ] D. Other LED Lighting
·
Chinese Academy of Sciences
(China): "Preparation and photoluminescence of Sc-doped ZnO
nanowires." S.M. Zhou, X.H. Zhang, X.M. Meng, X. Fan, S.K. Wu, and
S.T. Lee, Physica E-Low-Dimensional Systems & Nanostructures,
25(4):587-591 (January 2005). [
Abstract ]
·
Chinese Academy of Sciences
(China) / Beijing University of Technology (China): "Controlled
growth of O-polar ZnO epitaxial film by oxygen radical preconditioning of
sapphire substrate." Z.X. Mei, Y. Wang, X.L. Du, M.J. Ying, Z.Q. Zeng,
H. Zheng, J.F. Jia, Q.K. Xue et al, Journal of Applied Physics,
96(12):7108-7111 (December 15, 2004). [
Abstract ]
·
Chinese Academy of Sciences
(China) / Beijing University of Technology (China): "Defect
characteristics of ZnO film grown on (0001) sapphire with an ultrathin gallium
wetting layer." Y. Wang, X.L. Du, Z.X. Mei, Z.Q. Zeng, Q.Y. Xu, Q.K.
Xue, and Z. Zhang, Journal of Crystal Growth, 273(1-2):100-105 (December
17, 2004). [
Abstract ]
·
Dong-A University (South
Korea): "Structural and optical properties of ZnO thin films grown
by RF magnetron sputtering on Si substrates." T.E. Park, D.C. Kim,
B.H. Kong, and H.K. Cho, Journal of the Korean Physical Society,
45(S):S697-S700 (December 2004). [
Abstract ]
·
Korea Advanced Institute of
Science & Technology (South Korea): "Strong blue-green
luminescence of silicon-rich silicon oxide with doping of C and TB."
S.Y. Seo, K.S. Cho, and J.H. Shin, Journal of the Korean Physical Society,
45(S):S689-S692 (December 2004). [
Abstract ]
·
Kyoto University (Japan): "Fabrication
and characterization of self- and artificially-assembled ZnO nanodots."
S.W. Kim, M. Ueda, and S. Fujita, Journal of the Korean Physical Society,
45(S):S803-S807 (December 2004). [
Abstract ]
·
Max Planck Institute of
Microstructural Physics (Germany) / University of Magdeburg (Germany): "A
low-temperature evaporation route for ZnO nanoneedles and nanosaws."
H.J. Fan, R. Scholz, A. Dadgar, A. Krost, and M. Zacharias, Applied Physics
A-Materials Science & Processing, 80(3):457-460 (February 2005). [
Abstract ]
·
Nanjing University (China)
/ Edax Inc / Chinese Academy of Sciences (China): "ZnO
well-faceted fibers with periodic junctions." L.S. Huang, S. Wright,
S.G. Yang, D.Z. Shen, B.X. Gu, and Y.W. Du, Journal of Physical Chemistry B,
108(52):19901-19903 (December 30, 2004). [
Abstract ]
·
Otto Von Guericke
University (Germany) / Akzo Nobel Chemicals HPMO (Germany): "Heteroepitaxy
and nitrogen doping of high-quality ZnO ." A. Dadgar, N. Oleynik, J.
Blasing, S. Deiter, D. Forster, F. Bertram, A. Diez, M. Seip et al, Journal
of Crystal Growth, 272(1-4):800-804 (December 10, 2004). [
Abstract ]
·
Pohang University of
Science & Technology (South Korea): "The growth and optical
properties of ZnO nanowires at the junctions of nanowalls." C. Xu, M.
Kim, S. Chung, and D.E. Kim, Solid State Communications, 132(12):837-840
(December 2004). [
Abstract ]
·
Pusan National University
(South Korea) / Pohang University of Science & Technology (South Korea):
"Optical and structural properties of self-assembled ZnO
nanocrystals." T.B. Hur, Y.H. Hwang, H.K. Kim, and I.J. Lee, Journal
of the Korean Physical Society, 46(1):120-123 (January 2005). [
Abstract ]
·
University of Magdeburg
(Germany): "Microscopic spatial distribution of bound excitons in
high-quality ZnO." F. Bertram, D. Forster, J. Christen, N. Oleynik, A.
Dadgar, and A. Krost, Journal of Crystal Growth, 272(1-4) December 10, 2004). [
Abstract ]
E. Review Articles
·
Indian Institute of
Technology (India): "Silicon - a new substrate for GaN growth."
S. Pal and C. Jacob, Bulletin of Materials Science, 27(6):501-504
(December 2004). [
Abstract ]
·
International University
Bremen (Germany) / Infineon Technology (Germany): "Prospects for
new wafer types and materials in semiconductor technology and factors for their
successful introduction." W. Bergholz, J. Wittmann, R. Winkler, H.
Tews, and R. Fehlhaber, Gettering and Defect Engineering in Semiconductor
Technology, 95-96:665-674 (2004). [
Abstract ]
·
NTT Basic Research
Laboratories (Japan): "Progress in nitride semiconductors from GaN
to InN - MOVPE growth and characteristics." T. Matsuoka, Superlattices
and Microstructures, 37(1):19-32 (January 2005). [
Abstract ]
·
Paul Drude Institut fur
Festkorperelekt (Germany): "Hydrogen-impurity complexes in III-V
semiconductors." W. Ulrici, Reports on Progress in Physics,
67(12):2233-2286 (December 2004). [
Abstract ]
· University of Florida / US Air Force: "Recent progress in processing and properties of ZnO." S.J. Pearton, D.P. Norton, K. Ip, Y.W. Heo, and T. Steiner, Progress in Materials Science, 50(3):293-340 (March 2005). [ Abstract ] |
|
CREDITS AND DISCLAIMER |
|
The information presented in this section has been developed by
Perspectives, a firm that specializes in technical and market intelligence, with assistance from Sandia National Labs. |
|
Point of Contact: Jeff Tsao |
Last modified: |
Web site maintained by: Dorothy Meister |