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ISSUE 25: SCIENTIFIC LITERATURE (Mid-September to early December 2004) |
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From the Technical Literature The material in this section is selected from scientific and technical papers that became available during the reporting time period. Links to online abstracts are provided. Most online abstracts are freely accessible to the public. A few require journal subscriptions or memberships, and are noted as such. The technical literature section is roughly organized by subject area and, within subjects, alphabetically by institution of the lead author. Use the links below to go directly to a section. A. Materials and Device Fabrication B. Materials and Device Design Properties A. Materials and Device Fabrication
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Accent Optical Technologies (UK) / University of Strathclyde (UK) / Epichem Metalorganic Ltd (UK) / Kamelian Ltd (UK): "Silicon doping of gallium nitride using ditertiarybutylsilane." C.J. Deatcher, C.W. Liu, M.G. Cheong, L.M. Smith, S. Rushworth, A. Widdowson, and I.M. Watson, Chemical Vapor Deposition, 10(4):187-190 (September 2004). [
Abstract ]
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Arizona State University: "Compositional dependence of phase separation in InGaN layers." M. Rao, D. Kim, and S. Mahajan, Applied Physics Letters, 85(11):1961-1963 (September 13, 2004). [
Abstract ]
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Art, Science & Technology Center for Cooperative Research (Japan) / Kyushu University (Japan) / Mie University (Japan) / NGK Insulators Ltd (Japan): "Influence of etching condition on surface morphology of AlN and GaN layers." N. Kuwano, R. Tajima, S. Bohyama, H. Miyake, K. Hiramatsu, and T. Shibata, Physica Status Solidi A-Applied Research, 201(12):2755-2759 (September
2004). [
Abstract ]
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Brown University: "Fabrication and performance of efficient blue light emitting III-nitride photonic crystals." L. Chen and A.V. Nurmikko, Applied Physics Letters, 85(17):3663-3665 (October 25, 2004). [
Abstract ]
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Chang Gung University (Taiwan) / National Tsing Hua University (Taiwan): "High-quality GaN films grown on Si(111) by a reversed Stranski-Krastanov growth mode." N.C. Chen, C.F. Shih, C.A. Chang, A.P. Chiu, S.D. Teng, and K.S. Liu, Physica Status Solidi B-Basic Research, 241(12):2698-2702 (October 2004). [
Abstract ]
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Changchun University of Science & Technology (China) / Chinese Academy of Sciences (China) / Thomas Swan Scientific Equipment Ltd (UK): "Reduction of tensile stress in GaN grown on Si(111) by inserting a low-temperature AlN interlayer." B.S. Zhang, M. Wu, J.P. Liu, J. Chen, J.J. Zhu, X.M. Shen, G. Feng, D.G. Zhao et al, Journal of Crystal Growth, 270(3-4):316-321 (October 1, 2004 ). [
Abstract ]
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Chiba University (Japan): "Polarity control of ZnO films grown with high temperature N-polar GaN intermediate layers by plasma-assisted molecular beam epitaxy." O.H. Roh, Y. Tomita, M. Ohsugi, X. Wang, Y. Ishitani, and A. Yoshikawa, Physica Status Solidi B-Basic Research, 241(12):2835-2838 (October 2004). [
Abstract ]
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Chinese Academy of Sciences (China): "Growth of crack-free GaN films on Si(111) substrate by using Al-rich AlN buffer layer." Y. Lu, G.W. Cong, X.L. Liu, D.C. Lu, Q.S. Zhu, X.H. Wang, J.J. Wu, and Z.G. Wang, Journal of Applied Physics, 96(9):4982-4988 (November 1, 2004). [
Abstract ]
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Chinese Academy of Sciences (China): "The novel bicrystalline GaN nanorods." S.M. Zhou, X.H. Zhang, X.M. Meng, X. Fan, K. Zou, and S.K. Wu, Materials Letters, 58(27-28): 3578-3581 (November 2004). [
Abstract ]
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Chonbuk National University (South Korea) / Korea Photon Technology Institute (South Korea) / Dong-A University (South Korea): "Direct heteroepitaxial lateral overgrowth of GaN on stripe-patterned sapphire substrates with very thin SiO2 masks." H.S. Cheong, M.K. Yoo, H.G. Kim, S.J. Bae, C.S. Kim, C.H. Hong, J.H. Baek, H.J. Kim et al, Physica Status Solidi B-Basic Research, 241(12):2763-2766 (October 2004). [
Abstract ]
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Chungbuk National University (South Korea) / Korea Photonics Technology Institute (South Korea): "Suppression of cracks and V-shaped defects, and improvement of reflectivity of GaN/AlGaN distributed Bragg reflectors by insertion of multiple interlayers." H.S. Cheong, T.V. Cuong, H.G. Kim, J.Y. Park, C.S. Kim, C.H. Hong, J.H. Baek, S.H. Lee et al, Physica Status Solidi A-Applied Research, 201(12):2799-2802 (September 2004). [
Abstract ]
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CNRS (France): "Polarity inversion of GaN(0001) by a high Mg doping." S. Pezzagna, P. Vennegues, N. Grandjean, and J. Massies, Journal of Crystal Growth, 269(2-4):249-256 (September 1, 2004). [
Abstract ]
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Dialight Japan Company Ltd (Japan) / Kochi University of Technology (Japan) / Kochi Industrial Promotional Center (Japan) / University of Tokushima (Japan): "Fabrication of high-performance 407 nm violet light-emitting diode." H.X. Wang, N. Jiang, H. Hiraki, K. Nishimura, H. Sasaoka, A. Hiraki, and S. Sakai, Journal of Crystal Growth, 270(1-2):57-61 (September 15, 2004). [
Abstract ]
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Dongguk University (South Korea) / Kyunghee University (South Korea): "Formation of InGaN nanorods with indium mole fractions by hydride vapor phase epitaxy." H.M. Kim, H. Lee, S.I. Kim, S.R. Ryu, T.W. Kang, and K.S. Chung, Physica Status Solidi B-Basic Research, 241(12):2802-2805 (October 2004). [
Abstract ]
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Dongguk University (South Korea) / Kyunghee University (South Korea): "Growth of indium gallium nitride nanorod arrays by HVPE using indium metal." H.M. Kim, T.W. Kang, and K.S. Chung, Journal of Ceramic Processing Research, 5(3):241-243 (2004). [
Abstract ]
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Fraunhofer Institute of Applied Solid State Physics (Germany): "III-N based short-wavelength LEDs, LUCO-LEDs, and lasers." F. Sommer, T. Stephan, F. Vollrath, K. Kiner, M. Kunzer, S. Muller, P. Schlotter, W. Pletschen et al, Physica Status Solidi A-Applied Research, 201(12):2628-2634 (September 2004 ). [
Abstract ]
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Harvard University: "Gallium nitride-based nanowire radial heterostructures for nanophotonics." F. Qian, Y. Li, S. Gradecak, D.L. Wang, C.J. Barrelet, and C.M. Lieber, Nano Letters, 4(10):1975-1979 (October 2004). [
Abstract ]
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Helsinki University of Technology (Finland): "GaN/GaAs(100) superlattices grown by metalorganic vapor phase epitaxy using dimethylhydrazine precursor." J. Sormunen, J. Riikonen, M. Sopanen, and H. Lipsanen, Journal of Crystal Growth, 270(3-4):346-350 (October 1, 2004). [
Abstract ]
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Industrial Technology Research Institute (Taiwan): "Efficiency enhancement of InGaN/GaN light-emitting diodes utilizing island-like GaN substrate." J.T. Hsu, J.D. Tsay, Y.D. Guo, C.C. Chuo, and S.M. Pan, Physica Status Solidi B-Basic Research, 241(12):2713-2716 (October 2004). [
Abstract ]
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Inha University (South Korea): "Preparation of GaN films on ZnO buffer layers by rf magnetron sputtering." H.W. Kim and N.H. Kim, Applied Surface Science, 236(1-4):192-197 (September 15, 2004). [
Abstract ]
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Ishikawajima Harima Heavy Industrial Co Ltd (Japan) / Tokyo University of Agriculture & Technology (Japan): "Pulse laser assisted MOVPE for InGaN with high indium content." N. Kawaguchi, K. Hida, Y. Kangawa, Y. Kumagai, and A. Koukitu, Physica Status Solidi A-Applied Research, 201(12):2846-2849 (September 2004). [
Abstract ]
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Isik University (Turkey) / Rossendorf Inc (Germany) / Fatih University of Istanbul (Turkey): "A model of AlN layer formation during ion nitriding of Al." V.I. Dimitrov, Applied Physics a-Materials Science & Processing, 79(7):1829-1832 (November 2004). [
Abstract ]
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ITN (Portugal) / University of Strathclyde (UK) / University of Montpellier (France): "High-temperature annealing and optical activation of Eu-implanted GaN." K. Lorenz, U. Wahl, E. Alves, S. Dalmasso, R.W. Martin, K.P. O'donnell, S. Ruffenach, and O. Briot, Applied Physics Letters, 85(14):2712-2714 (October 4, 2004). [
Abstract ]
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Japan Science & Technology Agency (Japan) / Tokyo Institute of Technology (Japan) / University of Tokyo (Japan) / Kanagawa Academy of Science & Technology (Japan): "Room-temperature synthesis of ultraviolet-emitting nanocrystalline GaN films using photochemical vapor deposition." S. Yamazaki, T. Yatsui, M. Ohtsu, T.W. Kim, and H. Fujioka, Applied Physics Letters, 85(15):3059-3061 (October 11, 2004). [
Abstract ]
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Kogakuin University (Japan): "Fabrication of GaN nanocrystallites and their application to UV/blue electroluminescent devices." T. Honda, M. Akiyama, S. Egawa, Y. Aoki, N. Obinata, and H. Kawanishi, Physica Status Solidi A-Applied Research, 201(12):2814-2817 (September 2004). [
Abstract ]
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Kohgakuin University (Japan): "Improvement of crystal quality of AlGaN multi quantum well structure by combination of flow-rate modulation epitaxy and AlN/GaN multi-buffer layer and resultant lasing at deep ultra-violet region." T. Takano, Y. Ohtaki, Y. Narita, and H. Kawanishi, Japanese Journal of Applied Physics Part 2-Letters & Express Letters, 43(10a):L1258-L1260 (October 1, 2004). [
Abstract ]
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Korea University (South Korea): "Synthesis of blue-light-emitting ZnGa2O4 nanowires using chemical vapor deposition." S.Y. Bae, H.W. Seo, C.W. Na, and J. Park, Chemical Communications, 16:1834-1835 (2004). [
Abstract ]
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Lawrence Berkeley National Laboratory / University of California-Berkeley: "Gallium nitride nanowires take direction from substrates." H.A. Jones-Bey, Laser Focus World, 40(9):41-42 (September 2004). [
Abstract ]
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LG Innotek (South Korea) / Korea Photonics Technology Institute (South Korea): "Growth of high quality GaN epilayer on AlInN/GaN/AlInN/GaN multilayer buffer and its device characteristics." S.H. Lee, H.H. Lee, J.J. Jung, Y.B. Moon, T.H. Kim, J.H. Baek, and Y.M. Yu, Physica Status Solidi A-Applied Research, 201(12):2795-2798 (September 2004). [
Abstract ]
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Linkoping University (Sweden) / University of California-San Diego: "Formation of Ga interstitials in (Al,In)(y)Ga1-yNxP1-x alloys and their role in carrier recombination." N.Q. Thinh, I.P. Vorona, M. Izadifard, I.A. Buyanova, W.M. Chen, Y.G. Hong, H.P. Xin, and C.W. Tu, Applied Physics Letters, 85(14):2827-2829 (October 4, 2004). [
Abstract ]
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Lund University (Sweden): "Epitaxial III-V nanowires on silicon." T. Martensson, C.P.T. Svensson, B.A. Wacaser, M.W. Larsson, W. Seifert, K. Deppert, A. Gustafsson, L.R. Wallenberg et al, Nano Letters, 4(10):1987-1990 (October 2004). [
Abstract ]
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Nagaoka University of Technology (Japan): "Hot-mesh CVD for growth of GaN films on (100) GaAs." K. Yasui, M. Ishibashi, Y. Taima, and T. Akahane, Thin Solid Films, 464-65:116-119 (October 2004). [
Abstract ]
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Nagoya Institute of Technology (Japan) / NGK Insulators Ltd (Japan): "High-electron-mobility AlGaN/AlN/GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy." M. Miyoshi, H. Ishikawa, T. Egawa, K. Asai, M. Mouri, T. Shibata, M. Tanaka, and O. Oda, Applied Physics Letters, 85(10):1710-1712 (September 6, 2004). [
Abstract ]
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Nanjing University (China): "GaN growth with low-temperature GaN buffer layers directly on Si(111) by hydride vapour phase epitaxy." H.Q. Yu, L. Chen, R. Zhang, X.Q. Xui, Z.L. Xie, Y.D. Ye, S.L. Gu, B. Shen et al, Chinese Physics Letters, 21(9):1825-1827 (September 2004). [
Abstract ]
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National Chiao Tung University (Taiwan) / Global Union Technology Corporation (Taiwan) / National Chung Hsing University (Taiwan): "Fabrication of GaN-based nanorod light emitting diodes using self-assemble nickel nano-mask and inductively coupled plasma reactive ion etching." H.W. Huang, C.C. Kao, T.H. Hsueh, C.C. Yu, C.F. Lin, J.T. Chu, H.C. Kuo, and S.C. Wang, Materials Science and Engineering B-Solid State Materials for Advanced Technology, 113(2):125-129 (October 25, 2004). [
Abstract ]
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National Chung Hsing University (Taiwan): "Vertical-conducting p-side-up GaN/mirror/Si light-emitting diodes by laser lift-off and wafer-transfer techniques." D.S. Wuu, S.C. Hsu, S.H. Huang, and R.H. Horng, Physica Status Solidi A-Applied Research, 201(12):2699-2703 (September 2004). [
Abstract ]
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National Taiwan University (Taiwan): "Surface chemistry of the linear chromium chain complex on GaN(0001)." C.H. Lung, S.M. Peng, and C.C. Chang, Journal of Vacuum Science & Technology A, 22(5):2112-2117 (September, 2004-October 31, 2004). [
Abstract ]
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National Tsing Hua University (Taiwan): "Size- and shape-controlled GaN nanocrystals grown on Si(111) substrate by reactive epitaxy." C.L. Wu, L.J. Chou, and S. Gwo, Applied Physics Letters, 85(11):2071-2073 (September 13, 2004). [
Abstract ]
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North Carolina State University : "Surface-roughness correlations in homoepitaxial growth of GaN(0001) films by NH3 supersonic jet epitaxy." N.A. Smith, H.H. Lamb, A.J. Mcginnis, and R.F. Davis, Journal of Applied Physics, 96(8):4556-4562 (October 15, 2004). [
Abstract ]
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North Carolina State University / Sandia National Laboratories: "Nanoscale GaN whiskers fabricated by photoelectrochemical etching." J.A. Grenko, C.L. Reynolds, R. Schlesser, J.J. Hren, K. Bachmann, Z. Sitar, and P.G. Kotula, Journal of Applied Physics, 96(9):5185-5188 (November 1, 2004). [
Abstract ]
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Osaka University (Japan): "Barrier height control for electron field emission by growing an ultra-thin AIN layer on GaN/Mo." S. Nishida, T. Yamashita, S. Hasegawa, and H. Asahi, Thin Solid Films, 464-65:128-130 (October 2004). [
Abstract ]
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Osaka University (Japan): "The influences of supersaturation on LPE growth of GaN single crystals using the Na flux method." M. Morishita, F. Kawamura, M. Kawahara, M. Yoshimura, Y. Mori, and T. Sasaki, Journal of Crystal Growth, 270(3-4):402-408 (October 1, 2004). [
Abstract ]
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Otto Von Guericke University (Germany): "Wafer curvature in the nonlinear deformation range." R. Clos, A. Dadgar, and A. Krost, Physica Status Solidi A-Applied Research, 201(11):R75-R78 (September 2004). [
Abstract ]
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Palo Alto Research Center / University of Paderborn (Germany): "Strong affinity of hydrogen for the GaN(000-1) surface: Implications for molecular beam epitaxy and metalorganic chemical vapor deposition." J.E. Northrup and J. Neugebauer, Applied Physics Letters, 85(16):3429-3431 (October 18, 2004). [
Abstract ]
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Peking University (China): "Improvement of properties of p-GaN by Mg delta doping." Y.B. Pan, Z.J. Yang, Y. Lu, M. Lu, C.Y. Hu, T.J. Yu, X.D. Hu, and G.Y. Zhang, Chinese Physics Letters, 21(10):2016-2018 (October 2004). [
Abstract ]
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Pennsylvania State University : "Intrinsic stresses in AlN layers grown by metal organic chemical vapor deposition on (0001) sapphire and (111)Si substrates." S. Raghavan and J.M. Redwing, Journal of Applied Physics, 96(5):2995-3003 (September 1, 2004). [
Abstract ]
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Polish Academy of Sciences (Poland): "Deposition of bulk GaN from solution in gallium under high N-2 pressure on silicon carbide and sapphire substrates." M. Bochowski, I. Grzegory, S. Krukowski, B. Lucznik, M. Wroblewski, G. Kamler, J. Borysiuk, P. Kwiatkowski et al, Journal of Crystal Growth, 270(3-4):409-419 (October 1, 2004). [
Abstract ]
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Polish Academy of Sciences (Poland): "Growth of bulk GaN on GaN/sapphire templates by a high N-2 pressure method." M. Bockowski, I. Grzegory, B. Lucznik, S. Krukowski, M. Wroblewski, P. Kwiatkowski, K. Jasik, W. Wawer et al, Physica Status Solidi B-Basic Research, 241(12):2685-2688 (October 2004). [
Abstract ]
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RIKEN (Japan) / Tokyo Institute of Technology (Japan): "Growth and annealing conditions of high Al-content p-type AlGaN for deep-UV LEDs." T. Obata, H. Hirayama, Y. Aoyagi, and K. Ishibashi, Physica Status Solidi A-Applied Research, 201(12):2803-2807 (September 2004). [
Abstract ]
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Ruhr University of Bochum (Germany): "Ligand stabilised dialkyl aluminium amides as new precursors for aluminium nitride thin films." J. Khanderi, D. Rische, H.W. Becker, and R.A. Fischer, Journal of Materials Chemistry, 14(21):3210-3214 (2004). [
Abstract ]
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Saitama University (Japan) / CREST (Japan): "Epitaxial growth of hexagonal and cubic InN films." K. Nishida, Y. Kitamura, Y. Hijikata, H. Yaguchi, and S. Yoshida, Physica Status Solidi B-Basic Research, 241(12):2839-2842 (October 2004). [
Abstract ]
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Shanghai Jiao Tong University (China): "Coherent growth and superhardness effect of AIN/TiN nanomultilayers." F.H. Mei, N. Shao, J.W. Dai, and G.Y. Li, Materials Letters, 58(27-28):3477-3480 (November 2004). [
Abstract ]
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Soft Impact Ltd (Russia) / Swiss Federal Institute of Technology (Switzerland): "Surface chemistry and transport effects in GaN hydride vapor phase epitaxy." A.S. Segal, A.V. Kondratyev, S.Y. Karpov, D. Martin, V. Wagner, and M. Ilegems, Journal of Crystal Growth, 270(3-4):384-395 (October 1, 2004). [
Abstract ]
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St Petersburg State University (Russia) / University of Georgia: "Spontaneous gas-phase generation of needle-shaped clusters which violate the isolated square rule: A facile road to GaN nanorods?" A.Y. Timoshkin and H.F. Schaefer, Journal of the American Chemical Society, 126(38):12141-12154 (September 29, 2004). [
Abstract ]
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Tokyo Institute Technology (Japan) / Bruker AXS KK (Japan) / Osaka Institute of Technology (Japan): "Room-temperature growth of ultrasmooth AlN epitaxial thin films on sapphire with NiO buffer layer." A. Sasaki, J. Liu, W. Hara, S. Akiba, K. Saito, T. Yodo, and M. Yoshimoto, Journal of Materials Research, 19(9):2725-2729 (September 2004). [
Abstract ]
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Universidad Politecnica de Madrid (Spain) / CNRS (France) / Paul Drude Institut fur Festkorperelekt (Germany): "Efficiency optimization of p-type doping in GaN : Mg layers grown by molecular-beam epitaxy." F.B. Naranjo, E. Calleja, Z. Bougrioua, A. Trampert, X. Kong, and K.H. Ploog, Journal of Crystal Growth, 270(3-4):542-546 (October 1, 2004). [
Abstract ]
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University of California-Santa Barbara / University of Bremen (Germany): "Wafer bonding of GaN and ZnSSe for optoelectronic applications." A. Murai, L. Mccarthy, U. Mishra, S.P. Denbaars, C. Kruse, S. Figge, and D. Hommel, Japanese Journal of Applied Physics Part 2-Letters & Express Letters, 43(10a):L1275-L1277 (October 1, 2004). [
Abstract ]
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University of Clausthal (Germany): "Numerical study of AlGaN growth by MOVPE in an AIX200 RF horizontal reactor." E. Mesic, M. Mukinovic, and G. Brenner, Computational Materials Science, 31(1-2):42-56 (September 2004). [
Abstract ]
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University of Erlangen Nurnberg (Germany): "Characterization of bulk AlN with low oxygen content." M. Bickermann, B.M. Epelbaum, and A. Winnacker, Journal of Crystal Growth, 269(2-4):432-442 (September 1, 2004). [
Abstract ]
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University of Liverpool (UK): "Fabrication of epitaxial III-nitride cantilevers on silicon (111) substrates." S. Davies, T.S. Huang, R.T. Murray, M.H. Gass, A.J. Papworth, T.B. Joyce, and P.R. Chalker, Journal of Materials Science-Materials in Electronics, 15(11):705-710 (November 2004). [
Abstract ]
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University of Minnesota / CEA Grenoble (France) / University of Oxford (UK) / Lawrence Livermore National Laboratory: "Nucleation and growth of GaN/AlN quantum dots." C. Adelmann, B. Daudin, R.A. Oliver, G.A.D. Briggs, and R.E. Rudd, Physical Review B, 70(12):125427 (September 2004). [
Abstract ]
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University of Nijmegen (Netherlands): "Interlacing of growth steps on crystal surfaces as a consequence of crystallographic symmetry." W.J.P. Van Enckevort and P. Bennema, Acta Crystallographica Section a, 60(6):532-541 (November 2004). [
Abstract ]
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University of Regensburg (Germany) / Osram Opto Semiconductors GmbH (Germany): "Strain, wing tilt and photoluminescence in epitaxial lateral overgrown GaN on SiC substrates." N. Gmeinwieser, K. Engl, U.T. Schwarz, J. Zweck, W. Wegscheider, S. Miller, A. Leber, A. Weimar et al, Physica Status Solidi A-Applied Research, 201(12):2760-2763 (September 2004). [
Abstract ]
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University of Shizuoka (Japan) / Yamaha Corporation (Japan): "Cathodoluminescence of polycrystalline GaN grown by a hot wall epitaxy technique." Y. Inoue, T. Hoshino, S. Takeda, A. Ishida, H. Fujiyasu, H. Kominami, H. Mimura, Y. Nakanishi et al, Physica Status Solidi B-Basic Research, 241(12):2717-2721 (October 2004). [
Abstract ]
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University of Tokyo (Japan): "Highly luminescent cubic GaN microcrystals grown on GaAs(001) substrates by RF-MBE." R. Katayama, K. Onabe, and Y. Shiraki, Physica Status Solidi B-Basic Research, 241(12):2739-2743 (October 2004). [
Abstract ]
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University of Tokyo (Japan) / Japan Science & Technology Agency (Japan) / Stanley Electric Company Ltd. (Japan): "Fabrication of AlGaN-based waveguides by inductively coupled plasma etching." N. Li, I. Waki, C. Kumtornkittikul, J.H. Liang, M. Sugiyama, Y. Shimogaki, and Y. Nakano, Japanese Journal of Applied Physics Part 2-Letters & Express Letters, 43(10b):L1340-L1342 (October 15, 2004). [
Abstract ]
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University of Tsukuba (Japan): "Tolerance of GaAs as an original substrate for HVPE growth of free standing GaN." M. Suzuki, T. Sato, T. Suemasu, and F. Hasegawa, Physica Status Solidi A-Applied Research, 201(12):2782-2785 (September 2004). [
Abstract ]
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University of Ulm (Germany) / Technical University of Carolo Wilhelmina Braunschweig (Germany): "Molecular beam epitaxy of high-quality ZnO using hydrogen peroxide as an oxidant." N. Izyumskaya, V. Avrutin, W. Schoch, A. El-Shaer, F. Reuss, T. Gruber, and A. Waag, Journal of Crystal Growth, 269(2-4):356-361 (September 1, 2004). [
Abstract ]
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University of Uppsala (Sweden) / University of Sofia (Bulgaria) / University of Illinois: "Dependence of the electromechanical coupling on the degree of orientation of c-textured thin AlN films." J. Bjurstrom, D. Rosen, I. Katardjiev, V.M. Yanchev, and I. Petrov, IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control, 51(10):1347-1353 (October 2004). [
Abstract ]
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University of Washington / University of California-Berkeley: "A systematic study on group III-nitride thin films with low temperature deposited via MOCVD." T.C. Chen, M. Johnson, K. Poochinda, T.G. Stoebe, and N.L. Ricker, Optical Materials, 26(4):417-420 (September 2004). [
Abstract ]
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US Army Research Laboratory / University of Maryland: "A comparison of the AIN annealing cap for 4H-SiC annealed in nitrogen versus argon atmosphere." M.A. Derenge, K.A. Jones, K.W. Kirchner, M.H. Ervin, T.S. Zheleva, S. Hullavarad, and R.D. Vispute, Solid-State Electronics, 48(10-11):1867-1872 (October, 2004-November 30, 2004). [
Abstract ]
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Veeco TurboDisc Operations / Rutgers State University: "High power blue LED development using different growth modes." D.S. Lee, D.I. Florescu, D. Lu, J.C. Ramer, V. Merai, A. Parekh, M.J. Begarney, and E.A. Armour, Physica Status Solidi A-Applied Research, 201(12):2644-2648 (September 2004). [
Abstract ]
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Wakasa Wan Energy Research Center (Japan) / Fukui University (Japan): "Ion beam synthesis of 3C-SiC layers in Si and its application in buffer layer for GaN epitaxial growth." Y. Ito, T. Yamauchi, A. Yamamoto, M. Sasase, S. Nishio, K. Yasuda, and Y. Ishigami, Applied Surface Science, 238(1-4):159-164 (November 15, 2004). [
Abstract ]
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Waseda University (Japan) / Koha Company Ltd (Japan): "Reconstruction of the beta-Ga2O3 (100) cleavage surface to hexagonal GaN after NH3 nitridation." E.G. Villora, K. Shimamura, K. Aoki, and N. Ichinose, Journal of Crystal Growth, 270(3-4):462-468 (October 1, 2004). [
Abstract ]
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Yale University / Brown University: "Droplet heteroepitaxy of GaN quantum dots by metal-organic chemical vapor deposition." M. Gherasimova, G. Cui, S.R. Jeon, Z. Ren, D. Martos, J. Han, Y. He, and A.V. Nurmikko, Applied Physics Letters, 85(12):2346-2348 (September 20, 2004). [
Abstract ]
· Yeungnam University (South Korea): "Synthesis of gallium nitride powders and nanowires from gallium oxyhydroxide under a flow of ammonia." W.S. Jung and B.K. Min, Materials Letters, 58(24):3058-3062 (September 2004). [ Abstract ] B. Materials and Device Design Properties
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Aristotle University of Thessaloniki (Greece) / Universidad de Politecnica Catalunya (Spain) / SIFCOM-ENSICAEN (France): "Junction lines of inversion domain boundaries with stacking faults in GaN." J. Kioseoglou, G.P. Dimitrakopulos, P. Komninou, H.M. Polatoglou, A. Serra, A. Bere, G. Nouet, and T. Karakostas, Physical Review B, 70(11):115331 (September, 2004 ). [
Abstract ]
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Arizona State University / Meijo University (Japan): "Spatial variation of luminescence from AlGaN grown by facet controlled epitaxial lateral overgrowth." A. Bell, R. Liu, U.K. Parasuraman, F.A. Ponce, S. Kamiyama, H. Amano, and I. Akasaki, Applied Physics Letters, 85(16):3417-3419 (October 18, 2004). [
Abstract ]
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Balikesir University (Turkey) / University of Essex (UK): "The effect of interface roughness scattering on low field mobility of 2D electron gas in GaN/AlGaN heterostructure." S. Gokden, R. Baran, N. Balkan, and S. Mazzucato, Physica E-Low-Dimensional Systems & Nanostructures, 24(3-4):249-256 (September, 2004 ). [
Abstract ]
·
Balikesir University (Turkey) / University of Essex (UK): "The effect of scattering mechanisms on the low field mobility in GaN/AlGaN heterostructures." S. Gokden, A. Ilgaz, N. Balkan, and S. Mazzucato, Physica E-Low-Dimensional Systems & Nanostructures, 25(1):86-92 (October 2004). [
Abstract ]
·
Brno University of Technology (Czech Republic): "TOF-LEIS analysis of ultra thin films: Ga and Ga-N layer growth on Si(111)." M. Kolibal, S. Prusa, P. Babor, and T. Sikola, Surface Science, 566(2):885-889 (September 20, 2004). [
Abstract ]
·
Caltech / Nichia Corporation: "Surface-plasmon-enhanced light emitters based on InGaN quantum wells." K. Okamoto, I. Niki, A. Shvartser, Y. Narukawa, T. Mukai, and A. Scherer, Nature Materials, 3(9):601-605 (September 2004). [
Abstract ]
·
CEA Grenoble (France) / Technical University of Munich (Germany) / Savoie Technolac (France): "Polytype transition of N-face GaN : Mg from wurtzite to zinc-blende." E. Monroy, M. Hermann, E. Sarigiannidou, T. Andreev, P. Holliger, S. Monnoye, H. Mank, B. Daudin et al, Journal of Applied Physics, 96(7):3709-3715 (October 1, 2004). [
Abstract ]
·
Chalmers University of Technology (Sweden) / University of Gothenburg (Sweden) / Jilin Normal University (China): "Effects of buffer layer and nitrogen purification on optical properties of MBE-grown GaN on sapphire(0001)." J.H. Yang and O. Zsebok, Thin Solid Films, 466(1-2):21-26 (November 1, 2004). [
Abstract ]
·
Charles University (Czech Republic) / Johannes Kepler University (Austria) / Tech University of Ilmenau (Germany): "High-resolution diffuse x-ray scattering from threading dislocations in heteroepitaxial layers." S. Danis, V. Holy, Z. Zhong, G. Bauer, and O. Ambacher, Applied Physics Letters, 85(15):3065-3067 (October 11, 2004). [
Abstract ]
·
Chinese Academy
of Sciences (China):
"Raman scattering
and photoluminescence
studies of Er-implanted
and Er+ O coimplanted
GaN." S.F. Song,
W.D. Chen, C.G. Zhang,
L.F. Bian, C.C. Hsu, B.S.
Ma, G.H. Li, and J.J.
Zhu, Journal of Applied
Physics, 96(9):4930-4934
(November 1, 2004). [
Abstract ]
·
Chinese Academy
of Sciences (China) /
Jilin University (China)
/ Beijing University of
Technology (China): "Generation
and behavior of pure-edge
threading misfit dislocations
in InxGa1-xN/GaN multiple
quantum wells."
W. Lu, D.B. Li, C.R. Li,
and Z. Zhang, Journal
of Applied Physics,
96(9):5267-5270 (November
1, 2004). [
Abstract ]
·
Chinese Academy
of Sciences (China) /
Peking University (China)
/ Wuhan University (China):
"A study of
the degree of relaxation
of AlGaN epilayers on
GaN template."
J.C. Zhang, M.F. Wu, J.F.
Wang, J.P. Liu, Y.T. Wang,
J. Chen, R.Q. Jin, and
H. Yang, Journal of
Crystal Growth, 270(3-4):289-294
(October 1, 2004). [
Abstract ]
·
Chonbuk National
University (South Korea):
"Effect of
dopant concentration on
the breakdown voltage
in InGaN/GaN multiple-quantum-well
light-emitting diodes."
H.G. Kang, R.J. Choi,
Y.B. Hahn, C.H. Hong,
and H.J. Lee, Journal
of the Korean Physical
Society, 45(4):1056-1059
(October 2004). [
Abstract ]
·
Chonbuk National
University (South Korea):
"Impurity
band in magnesium-doped
GaN layers grown by metalorganic
chemical vapor deposition."
D.S. Kang, M.G. Cheong,
S.K. Lee, E.K. Suh, C.H.
Hong, and H.J. Lee, Physica
Status Solidi B-Basic
Research, 241(12):2759-2762
(October 2004). [
Abstract ]
·
Chonbuk National
University (South Korea)
/ Korea Institute of Science
& Technology (South
Korea) / University of
California - Berkeley:
"Gallium nitride
nanowires with a metal
initiated metal-organic
chemical vapor deposition
(MOCVD) approach."
S.K. Lee, H.J. Choi, P.
Pauzauskie, P.D. Yang,
N.K. Cho, H.D. Park, E.K.
Suh, K.Y. Lim et al, Physica
Status Solidi B-Basic
Research, 241(12):2775-2778
(October 2004). [
Abstract ]
·
CSIC (Spain) / University
of Habana (Cuba): "Electronic
structure of (001) GaN/AlN
quantum wells."
V.R. Velasco, J. Tutor,
and H. Rodriguez-Coppola,
Surface Science,
565(2-3):259-268 (September
10, 2004). [
Abstract ]
·
Defence Research Establishment
(Canada) / University
of Montreal (Canada) /
University of Sherbrooke
(Canada) / SFA Inc / US
Naval Research Laboratory
/ University of Maryland-Baltimore
City / Caltech: "Proton
energy dependence of the
light output in gallium
nitride light-emitting
diodes." S.M.
Khanna, D. Estan, L.S.
Erhardt, A. Houdayer,
C. Carlone, A. Lonascut-Nedelcescu,
S.R. Messenger, R.J. Walters
et al, IEEE Transactions
on Nuclear Science,
51(5):3, P.2729-2735 (October
2004). [
Abstract ]
·
Dong-A University (South
Korea) / LG Electronics
Institute of Technology
(South Korea): "Emission
properties and thermal
annealing of InGaN/GaN
multiple quantum wells
with different protection
layers." H.K.
Cho, T.E. Park, A.C. Kim,
J.E. Shin, and J.S. Lee,
Physica Status Solidi
B-Basic Research,
241(12):2816-2819 (October
2004). [
Abstract ]
·
East China Normal
University (China) / Shandong
University (China) / Shangdong
Normal University (China):
"Field emission
from GaN nanobelts with
herringbone morphology."
L.Q. Luo, K. Yu, Z.Q.
Zhu, Y.S. Zhang, H.L.
Ma, C.S. Xue, Y.G. Yang,
and S.Q. Chen, Materials
Letters, 58(22-23):2893-2896
(September 2004). [
Abstract ]
·
Ehime University
(Japan): "Photoluminescence
of Eu-doped GaN thin films
prepared by radio frequency
magnetron sputtering."
S. Shirakata, R. Sasaki,
and T. Kataoka, Applied
Physics Letters, 85(12):2247-2249
(September 20, 2004).
[
Abstract ]
·
ENSICAEN-CNRS (France)
/ IUT ALENCON (France)
/ Chinese Academy of Sciences
(China): "Structural
analysis of thick GaN
films grown by hydride
vapour phase epitaxy."
P. Ruterana, J. Chen,
G. Nouet, B.L. Lei, H.H.
Ye, G.H. Yu, M. Qi, and
A.Z. Li, Physica Status
Solidi B-Basic Research,
241(12):2689-2692 (October
2004). [
Abstract ]
·
ENSICAEN-CNRS (France)
/ Polish Academy of Sciences
(Poland) / Dong-A University
(South Korea) / Chonbuk
National University (South
Korea): "Quantitative
evaluation of the atomic
structure of defects and
composition fluctuations
at the nanometer scale
inside InGaN/GaN heterostructures."
P. Ruterana, P. Singh,
S. Kret, G. Jurczak, G.
Maciejewski, P. Dluzewski,
H.K. Cho, R.J. Choi et
al, Physica Status
Solidi B-Basic Research,
241(12):2735-2738 (October
2004). [
Abstract ]
·
ETSII (Spain) / Thales
Research & Technology
(France) / CSIC (Spain):
"Optical properties
of epitaxial lateral overgrowth
GaN structures studied
by Raman and cathodoluminescence
spectroscopies."
O. Martinez, M. Avella,
J. Jimenez, B. Gerard,
R. Cusco, and L. Artus,
Journal of Applied
Physics, 96(7):3639-3644
(October 1, 2004). [
Abstract ]
·
Europe Ltd (UK): "High-power
InGaN light emitting diodes
grown by molecular beam
epitaxy." K.
Johnson, V. Bousquet,
S.E. Hooper, M. Kauer,
C. Zellweger, and J. Heffernan,
IEEE Electronics Letters,
40(20):1299-1300 (September
30, 2004). [
Abstract ]
·
Faculté des Sciences
de Monastir (Tunisia)
/ University of Rochester:
"Structural
and optical characterization
of GaN grown on porous
silicon substrate by MOVPE."
N. Chaaben, T. Boufaden,
M. Christophersen, and
B. El Jani, Microelectronics
Journal, 35(11):891-895
(November 2004). [
Abstract ]
·
GE Company / AXT:
"Homoepitaxially
grown GaN-based light-emitting
diodes with peak emission
at 405 nm." X.A.
Cao, C.H. Yan, M.P. D'evelyn,
S.F. Leboeuf, J.W. Kretchmer,
R. Klinger, S.D. Arthur,
and D.W. Merfeld, Journal
of Crystal Growth,
269(2-4):242-248 (September
1, 2004). [
Abstract ]
·
General Electric
Global Research Center:
"High-power
and reliable operation
of vertical light-emitting
diodes on bulk GaN."
X.A. Cao and S.D. Arthur,
Applied Physics Letters,
85(18):3971-3973 (November
1, 2004). [
Abstract ]
·
Georgia State
University / Technical
University of Berlin (Germany)
/ North Carolina State
University: "The
growth and optical properties
of large, high-quality
AlN single crystals."
M. Strassburg, J. Senawiratne,
N. Dietz, U. Haboeck,
A. Hoffmann, V. Noveski,
R. Dalmau, R. Schlesser
et al, Journal of Applied
Physics, 96(10):5870-5876
(November 15, 2004). [
Abstract ]
·
Hanyang Univeristy
(South Korea) / Seoul
National University (South
Korea) / Korea Basic Science
Institute (South Korea)
/ Korea Instititute of
Science & Technology
(South Korea): "Electrical
characterization of InGaN/GaN
quantum dots by deep level
transient spectroscopy."
J.S. Kim, E.K. Kim, H.J.
Kim, E. Yoon, I.W. Park,
and Y.J. Park, Physica
Status Solidi B-Basic
Research, 241(12):2811-2815
(October 2004). [
Abstract ]
·
Hokkaido University
(Japan): "Computer
simulation of current
transport in GaN and AlGaN
Schottky diodes based
on thin surface barrier
model." J. Kotani,
H. Hasegawa, and T. Hashizume,
Applied Surface Science,
237(1-4):213-218 (October
15, 2004). [
Abstract ]
·
Howard University
/ NASA-Goddard Space Flight
Center / US Army Research
Laboratory / University
of Maryland: "Electrical
characteristics of AlxGa1-xN
Schottky diodes prepared
by a two-step surface
treatment." A.
Motayed, A. Sharma, K.A.
Jones, M.A. Derenge, A.A.
Iliadis, and S.N. Mohammad,
Journal of Applied
Physics, 96(6):3286-3295
(September 15, 2004).
[
Abstract ]
·
Huazhong University
of Science & Technology
(China): "Structural
characterization and optoelectronic
properties of GaN thin
films on Si(111) substrates
using pulsed laser deposition
assisted by gas discharge."
X.L. Tong, Q.G. Zheng,
S.L. Hu, Y.X. Qin, and
Z.H. Ding, Applied
Physics a-Materials Science
& Processing,
79(8):1959-1963 (December
2004). [
Abstract ]
·
Indian Association
for the Cultivation of
Science (India) / Keio
University (Japan): "Effect
of substrate-induced strain
on the structural, electrical,
and optical properties
of polycrystalline ZnO
thin films."
R. Ghosh, D. Basak, and
S. Fujihara, Journal
of Applied Physics,
96(5):2689-2692 (September
1, 2004). [
Abstract ]
·
Institute of
Molecular Science (Japan)
/ Tohoku University (Japan):
"Design proposal
of light emitting diode
in vacuum ultraviolet
based on perovskite-like
fluoride crystals."
R. El Ouenzerfi, S. Ono,
A. Quema, M. Goto, N.
Sarukura, T. Nishimatsu,
N. Terakubo, H. Mizuseki
et al, Japanese Journal
of Applied Physics Part
2-Letters & Express
Letters, 43(9a-B):L1140-L1143
(September 15, 2004).
[
Abstract ]
·
Institute of
Rare Metals (Russia) /
University of Florida
/ US Army Research Office:
"Properties
of highly Cr-doped AlN."
A.Y. Polyakov, N.B. Smirnov,
A.V. Govorkov, R.M. Frazier,
J.Y. Liefer, G.T. Thaler,
C.R. Abernathy, S.J. Pearton
et al, Applied Physics
Letters, 85(18):4067-4069
(November 1, 2004). [
Abstract ]
·
Instituto de Politecnico
Nacional (Mexico) / IPN
(Mexico) / UNAM (Mexico):
"Study of
GaNxAs1-x semiconducting
films grown by laser pulsed
deposition on crystalline
and amorphous substrates."
J.A. Cardona-Bedoya, A.
Cruz-Orea, J.G. Mendoza-Alvarez,
M.L. Gomez-Herrera, M.H.
Farias, and J.A. Diaz,
Applied Surface Science,
238(1-4):147-150 (November
15, 2004). [
Abstract ]
·
Intel Corporation /
University of Florida:
"Near-infrared
electroluminescence at
room temperature from
neodymium-doped gallium
nitride thin films."
J.H. Kim and P.H. Holloway,
Applied Physics Letters,
85(10):1689-1691 (September
6, 2004). [
Abstract ]
·
IPN (Mexico) / AF Ioffe
Physico-Technical Institute
(Russia): "Self-assembling
in AlxGa(1-x)N(y)As(1-y)
alloys." V.A.
Elyukhin, V.M. Sanchez,
and O.V. Elyukhina, Applied
Physics Letters, 85(10):1704-1706
(September 6, 2004). [
Abstract ]
·
Kansas State
University : "Acceptor-bound
exciton transition in
Mg-doped AlN epilayer."
N. Nepal, M.L. Nakarmi,
K.B. Nam, J.Y. Lin, and
H.X. Jiang, Applied
Physics Letters, 85(12):2271-2273
(September 20, 2004).
[
Abstract ]
·
Kansas State
University : "Optical
properties of AlN and
GaN in elevated temperatures."
K.B. Nam, J. Li, J.Y.
Lin, and H.X. Jiang, Applied
Physics Letters, 85(16):3489-3491
(October 18, 2004). [
Abstract ]
·
Kansas State
University : "Time-resolved
electroluminescence studies
of III-nitride ultraviolet
photonic-crystal light-emitting
diodes." J. Shakya,
J.Y. Lin, and H.X. Jiang,
Applied Physics Letters,
85(11):2104-2106 (September
13, 2004). [
Abstract ]
·
Kansas State
University : "Transport
properties of highly conductive
n-type Al-rich AlxGa1-xN
(x >= 0.7)."
M.L. Nakarmi, K.H. Kim,
K. Zhu, J.Y. Lin, and
H.X. Jiang, Applied
Physics Letters, 85(17):3769-3771
(October 25, 2004). [
Abstract ]
·
Katholieke University
of Leuven (Belgium) /
Ismra University of Caen
(France): "Defects
induced in GaN by europium
implantation."
M. Mamor, V. Matias, A.
Vantomme, A. Colder, P.
Marie, and P. Ruterana,
Applied Physics Letters,
85(12):2244-2246 (September
20, 2004). [
Abstract ]
·
Korea Institute of
Science & Technology
(South Korea) / Pennsylvania
State University / Seoul
National University (South
Korea): "The
effects of strained sapphire(0001)
substrate on the structural
quality of GaN epilayer."
Y.S. Cho, J. Kim, Y.J.
Park, H.S. Na, H.J. Kim,
H.J. Kim, E. Yoon, and
Y.W. Kim, Physica Status
Solidi B-Basic Research,
241(12):2722-2725 (October
2004). [
Abstract ]
·
Korea University
(South Korea) / Korea
Atomic Energy Research
Institute (South Korea):
"Photocurrent
and photoluminescence
characteristics of networked
GaN nanowires."
M. Kang, J.S. Lee, S.K.
Sim, H. Kim, B. Min, K.
Cho, G.T. Kim, M.Y. Sung
et al, Japanese Journal
of Applied Physics Part
1-Regular Papers Short
Notes & Review Papers,
43(10):6868-6872 (October
2004). [
Abstract ]
·
Korea University
(South Korea) / Korea
Atomic Energy Research
Institute (South Korea)
/ LG Innotek (South Korea)
/ Korea Basic Sciences
Institute (South Korea):
"Properties
of various ion-implanted
sapphire substrates for
GaN epilayers."
J. Jhin, J. Lee, D. Byun,
J.S. Lee, J.H. Lee, C.
Kim, H. Lee, Y. Moon et
al, Physica Status
Solidi A-Applied Research,
201(12):2791-2794 (September
2004). [
Abstract ]
·
Korea University
(South Korea) / Samsung
Advanced Institute of
Technology (South Korea)
/ Samsung Electronics
Company Ltd (South Korea):
"Structural
and optical properties
of as-synthesized, Ga2O3-coated,
and Al2O3-coated GaN nanowires."
M. Kang, J.S. Lee, S.K.
Sim, B. Min, K. Cho, H.
Kim, M.Y. Sung, S. Kim
et al, Thin Solid Films,
466(1-2):265-271 (November
1, 2004). [
Abstract ]
·
Kwang Woon University
(South Korea) / Samsung
Advanced Institute of
Technology (South Korea):
"Influence
of electron tunneling
barriers on the performance
of InGaN-GaN ultraviolet
light-emitting diodes."
K.C. Kim, Y.C. Choi, D.H.
Kim, T.G. Kim, S.H. Yoon,
C.S. Sone, and Y.J. Park,
Physica Status Solidi
A-Applied Research,
201(12):2663-2667 (September,
2004 ). [
Abstract ]
·
Kyoto University
(Japan): "First-principle
study on electronic properties
of gallium nitride and
aluminium nitride nanowires."
K. Doi, N. Higashimaki,
Y. Kawakami, K. Nakamura,
and A. Tachibana, Physica
Status Solidi B-Basic
Research, 241(12):2806-2810
(October 2004). [
Abstract ]
·
Kyoto University
(Japan): "Quantum
chemical study on substituent
effect of gas-phase reactions
in III-V nitride semiconductor
crystal growth."
T. Okada, K. Doi, K. Nakamura,
and A. Tachibana, Physica
Status Solidi B-Basic
Research, 241(12):2744-2748
(October 2004). [
Abstract ]
·
Kyoto University
(Japan) / Nichia Corporation
(Japan): "Efficient
radiative recombination
from < 11(2)over-bar-2
>-oriented InxGa1-xN
multiple quantum wells
fabricated by the regrowth
technique." K.
Nishizuka, M. Funato,
Y. Kawakami, S. Fujita,
Y. Narukawa, and T. Mukai,
Applied Physics Letters,
85(15):3122-3124 (October
11, 2004). [
Abstract ]
·
Linkoping University
(Sweden) / Bulgarian Academy
of Sciences (Bulgaria)
/ University of Leipzig
(Germany): "Micro-Raman
scattering profiling studies
on HVPE-grown free-standing
GaN." A. Kasic,
D. Gogova, H. Larsson,
C. Hemmingsson, I. Ivanov,
B. Monemar, C. Bundesmann,
and M. Schubert, Physica
Status Solidi A-Applied
Research, 201(12):2773-2776
(September 2004). [
Abstract ]
·
Linkoping University
(Sweden) / University
of Coimbra (Portugal):
"Effect of
impurity incorporation
on crystallization in
AlN sublimation epitaxy."
A. Kakanakova-Georgieva,
G.K. Gueorguiev, R. Yakimova,
and E. Janzen, Journal
of Applied Physics,
96(9):5293-5297 (November
1, 2004). [
Abstract ]
·
Lucent Technologies
/ MIT: "Electron
mobility in very low density
GaN/AlGaN/GaN heterostructures."
M.J. Manfra, K.W. Baldwin,
A.M. Sergent, R.J. Molnar,
and J. Caissie, Applied
Physics Letters, 85(10):1722-1724
(September 6, 2004). [
Abstract ]
·
Madurai Kamaraj
University (India): "Band
structure, metallization
and superconductivity
of GaP and GaN under high
pressure." C.N.
Louis, K. Iyakutti, K.S.H.
Nandhini, M. Sivakumar,
and E. Palaniyandi, Physica
Status Solidi B-Basic
Research, 241(11):2489-2500
(September, 2004 ). [
Abstract ]
·
Matsushita Electric
Industrial Company Ltd
(Japan) / Tokyo Institute
of Technology (Japan):
"Molecular
dynamics simulation for
evaluating melting point
of wurtzite-type GaN crystal."
K. Harafuji, T. Tsuchiya,
and K. Kawamura, Journal
of Applied Physics,
96(5):2501-2512 (September
1, 2004). [
Abstract ]
·
Matsushita Electric
Industrial Company Ltd
(Japan) / Tokyo Institute
of Technology (Japan):
"Molecular
dynamics simulation of
dislocations in wurtzite-type
GaN crystal."
K. Harafuji, T. Tsuchiya,
and K. Kawamura, Journal
of Applied Physics,
96(5):2513-2524 (September
1, 2004). [
Abstract ]
·
Matsushita Electric
Industrial Company Ltd
(Japan) / Yamaguchi University
(Japan): "Spatially
resolved cathodoluminescence
study on AlGaN layer fabricated
by air-bridged lateral
epitaxial growth."
A. Ishibashi, Y. Kawaguchi,
G. Sugahara, T. Shimamoto,
T. Yokogawa, Y. Yamada,
Y. Ueki, K. Nakamura et
al, Physica Status
Solidi B-Basic Research,
241(12):2730-2734 (October
2004). [
Abstract ]
·
Max Planck Gesell (Germany)
/ University of Paderborn
(Germany) / University
of Erlangen Nurnberg (Germany):
"Strain induced
deep electronic states
around threading dislocations
in GaN." L. Lymperakis,
J. Neugebauer, M. Albrecht,
T. Remmele, and H.P. Strunk,
Physical Review Letters,
93(19):196401 (November
5, 2004). [
Abstract ]
·
Myong Ji University
(South Korea) / University
of California-Irvine:
"Thermal analysis
of GaN-based LEDs using
the finite element method
and unit temperature profile
approach." T.H.
Lee, L. Kim, W.J. Hwang,
C.C. Lee, and M.W. Shin,
Physica Status Solidi
B-Basic Research,
241(12):2681-2684 (October
2004). [
Abstract ]
·
Nagoya Institute of
Technology (Japan): "Improved
characteristics of GaN-based
light-emitting diodes
by distributed Bragg reflector
grown on Si."
H. Ishikawa, K. Asano,
B. Zhang, T. Egawa, and
T. Jimbo, Physica Status
Solidi A-Applied Research,
201(12):2653-2657 (September
2004). [
Abstract ]
·
Nanjing University
(China) / Chinese Academy
of Sciences (China) /
University of Tokyo (Japan):
"Weak anti-localization
of the two-dimensional
electron gas in modulation-doped
AlxGa1-xN/GaN heterostructures
with two subbands occupation."
J. Lu, B. Shen, N. Tang,
D.J. Chen, H. Zhao, D.W.
Liu, R. Zhang, Y. Shi
et al, Applied Physics
Letters, 85(15):3125-3127
(October 11, 2004). [
Abstract ]
·
NASA-Ames Research
Center / Eloret Corporation:
"Modal gain
in a semiconductor nanowire
laser with anisotropic
bandstructure."
A.V. Maslov and C.Z. Ning,
IEEE Journal of Quantum
Electronics, 40(10):1389-1397
(October 2004). [
Abstract ]
·
National Changhua
University of Education
(Taiwan) / Feng Chia University
(Taiwan): "Study
of Schottky barrier heights
of indium-tin-oxide on
p-GaN using X-ray photoelectron
spectroscopy and current-voltage
measurements."
Y.J. Lin and C.W. Hsu,
Journal of Electronic
Materials, 33(9):1036-1040
(September 2004). [
Abstract ]
·
National Cheng
Kung University (Taiwan)
/ Nan Jeon Institute of
Technology (Taiwan) /
South Epitaxy Corporation
(Taiwan): "Improved
light output power of
InGaN/GaN MQW LEDs by
lower temperature p-GaN
rough surface."
C.H. Liu, R.W. Chuang,
S.J. Chang, Y.K. Su, L.W.
Wu, and C.C. Lin, Materials
Science and Engineering
B-Solid State Materials
for Advanced Technology,
112(1):10-13 (September
15, 2004). [
Abstract ]
·
National Cheng
Kung University (Taiwan)
/ National Central University
(Taiwan): "Nitride-based
LEDs with modulation-doped
Al0.12Ga0.88N-GaN superlattice
structures."
T.C. Wen, S.J. Chang,
C.T. Lee, W.C. Lai, and
J.K. Sheu, IEEE Transactions
on Electron Devices,
51(10):1743-1746 (October
2004). [
Abstract ]
·
National Cheng
Kung University (Taiwan)
/ Waseda University (Japan):
"Photoluminescence
and Raman scattering in
Mg and P co-implanted
GaN epitaxial layers."
K.T. Liu, Y.K. Su, S.J.
Chang, K. Onomitsu, and
Y. Horikoshi, Physica
Status Solidi B-Basic
Research, 241(12):2693-2697
(October 2004). [
Abstract ]
·
National Chiao
Tung University (Taiwan):
"Near-field
optical microscopy and
scanning Kelvin microscopy
studies of V-defects on
AlGaN/GaN films."
C.S. Ku, J.M. Peng, W.C.
Ke, H.Y. Huang, N.E. Tang,
W.K. Chen, W.H. Chen,
and M.C. Lee, Applied
Physics Letters, 85(14):2818-2820
(October 4, 2004). [
Abstract ]
·
National Chiao
Tung University (Taiwan)
/ Chung Shan Institute
of Science & Technology
(Taiwan): "Microphotoluminescence
spectra of hillocks in
Al0.11Ga0.89N films."
W.C. Ke, C.S. Ku, H.Y.
Huang, W.C. Chen, L. Lee,
W.K. Chen, W.C. Chou,
W.H. Chen et al, Applied
Physics Letters, 85(15):3047-3049
(October 11, 2004). [
Abstract ]
·
National Chiao
Tung University
(Taiwan) / Global Union
Technology Corporation
(Taiwan) / National Chung
Hsing University (Taiwan):
"Investigation
of GaN LED with Be-implanted
Mg-doped GaN layer."
H.W. Huang, C.C. Kao,
J.T. Chu, H.C. Kuo, S.C.
Wang, C.C. Yu, and C.F.
Lin, Materials Science
and Engineering B-Solid
State Materials for Advanced
Technology, 113(1):19-23
(October 15, 2004). [
Abstract ]
·
National Chung
Hsing University
(Taiwan): "High-power
GaN light-emitting diodes
with patterned copper
substrates by electroplating."
R.H. Horng, C.E. Lee,
S.C. Hsu, S.H. Huang,
C.C. Wu, C.Y. Kung, and
D.S. Wuu, Physica Status
Solidi A-Applied Research,
201(12):2786-2790 (September
2004). [
Abstract ]
·
National University
of Singapore (Singapore):
"Empirical
pseudopotential study
of electronic, positron,
and structural properties
of Ga1-xAlxN."
Y. Al-Douri, Materials
Chemistry and Physics,
88(2-3):339-347 (December
15, 2004). [
Abstract ]
·
National University
of Singapore (Singapore)
/ Institute of Materials
Research & Engineering
(Singapore): "Identification
of deep levels in GaN
associated with dislocations."
C.B. Soh, S.J. Chua, H.F.
Lim, D.Z. Chi, W. Liu,
and S. Tripathy, Journal
of Physics-Condensed Matter,
16(34):6305-6315 (September
1, 2004). [
Abstract ]
·
Nichia Corporation
(Japan): "Watt-class
high-output-power 365
nm ultraviolet light-emitting
diodes." D. Morita,
M. Yamamoto, K. Akaishi,
K. Matoba, K. Yasutomo,
Y. Kasai, M. Sano, S.
Nagahama et al, Japanese
Journal of Applied Physics
Part 1-Regular Papers
Short Notes & Review
Papers, 43(9a):5945-5950
(September 2004). [
Abstract ]
·
NTT Corp (Japan):
"High luminescent
efficiency of InGaN multiple
quantum wells grown on
InGaN underlying layers."
T. Akasaka, H. Gotoh,
T. Saito, and T. Makimoto,
Applied Physics Letters,
85(15):3089-3091 (October
11, 2004). [
Abstract ]
·
Paul Drude Institut
fur Festkorperelekt (Germany)
/ Kyushu Institute of
Technology (Japan): "Electric-field
dependence of luminescence
spectra of (In,Ga)N/GaN
LEDs containing quantum
wells." U. Jahn,
S. Dhar, M. Ramsteiner,
and K. Fujiwara, Physica
Status Solidi A-Applied
Research, 201(12):2619-2623
(September 2004). [
Abstract ]
·
Peking University
(China): "Photoluminescence
from InGaN/GaN MQWs on
sapphire and membranes
fabricated by laser lift-off."
T.J. Yu, M.L. Li, Z.X.
Qin, Z.Z. Chen, Z.J. Yang,
X.D. Hu, and G.Y. Zhang,
Physica Status Solidi
B-Basic Research,
241(12):2783-2786 (October
2004). [
Abstract ]
·
Peking University
(China) / Henan Normal
University (China) / Macquarie
University (Australia):
"Propagating
optical-phonon modes and
their electron-phonon
interactions in wurtzite
GaN/AlxGa1-xN quantum
wells." J.J.
Shi, X.L. Chu, and E.M.
Goldys, Physical Review
B, 70(11):115318 (September
2004). [
Abstract ]
·
Pohang University
of Science & Technology
(South Korea) / Pusan
National University (South
Korea): "Oxidation
study of InN/sapphire(0001)
film using in-situ synchrotron
X-ray scattering."
I.J. Lee, J.Y. Kim, T.B.
Hur, and H.K. Kim, Physica
Status Solidi A-Applied
Research, 201(12):2777-2781
(September 2004). [
Abstract ]
·
Polish Academy
of Sciences (Poland):
"Energy dependence
of electron inelastic
mean free paths in bulk
GaN crystals."
M. Krawczyk, L. Zommer,
A. Jablonski, I. Grzegory,
and M. Bockowski, Surface
Science, 566(2):1234-1239
(September 20, 2004).
[
Abstract ]
·
Polish Academy
of Sciences (Poland):
"The evaluation
of thermochemical properties
of group-III nitrides:
BN and GaN."
I. Tomaszkiewicz, Thermochimica
Acta, 420(1-2):33-36
(October 1, 2004). [
Abstract ]
·
Polish Academy
of Sciences (Poland) /
Institute of Semiconductor
Physics (Lithuania) /
University of Hamburg
(Germany): "Photoemission
study of Mn/GaN."
I.A. Kowalik, B.J. Kowalski,
B.A. Orlowski, E. Lusakowska,
R.J. Iwanowski, S. Mickevicius,
R.L. Johnson, I. Grzegory
et al, Surface Science,
566(1):457-461 (September
20, 2004). [
Abstract ]
·
Rensselaer Polytechnic
Institute: "Junction-temperature
measurement in GaN ultraviolet
light-emitting diodes
using diode forward voltage
method." Y. Xi
and E.F. Schubert, Applied
Physics Letters, 85(12):2163-2165
(September 20, 2004).
[
Abstract ]
·
RIKEN (Japan) / Sumitomo
Electric Industries Ltd
(Japan): "High-efficiency
352 nm quaternary InAlGaN-based
ultraviolet light-emitting
diodes grown on GaN substrates."
H. Hirayama, K. Akita,
T. Kyono, T. Nakamura,
and K. Ishibashi, Japanese
Journal of Applied Physics
Part 2-Letters & Express
Letters, 43(10a):L1241-L1243
(October 1, 2004). [
Abstract ]
·
RIKEN (Japan) / Sumitomo
Electric Industries Ltd
(Japan): "Milliwatt
power 350 nm-band quaternary
InAlGaN UV-LEDs on GaN
substrates."
H. Hirayama, K. Akita,
T. Kyono, and T. Nakamura,
Physica Status Solidi
A-Applied Research,
201(12):2639-2643 (September
2004). [
Abstract ]
·
Ritsumeikan
University (Japan):
"Growth and
properties of In-rich
InGaN films grown on (0001)
sapphire by RF-MBE."
M. Kurouchi, T. Araki,
H. Naoi, T. Yamaguchi,
A. Suzuki, and Y. Nanishi,
Physica Status Solidi
B-Basic Research,
241(12):2843-2848 (October
2004). [
Abstract ]
·
Russian Academy
of Sciences (Russia) /
University of Paris (France):
"Elementary
blue-emission bands in
the luminescence spectrum
of undoped gallium nitride
films." A.N.
Gruzintsev, A.N. Red'kin,
V.I. Tatsii, C. Barthou,
and P. Benalloul, Semiconductors,
38(9):1001-1004 (2004).
[
Abstract ]
·
Samsung Advanced Institute
of Technology (South Korea):
"Electroluminescence
from deep level transitions
in an AlGaN/GaN superlattice."
J.K. Son, T. Sakong, S.N.
Lee, W.S. Lee, H. Paek,
H.Y. Ryu, K. Choi, S.
Chae et al, Physica
Status Solidi A-Applied
Research, 201(12):2764-2767
(September, 2004 ). [
Abstract ]
·
Seoul National
University (South
Korea) / Korea Research
Institute of Standards
& Science (South Korea)
/ Chungbuk National University
(South Korea): "Near-UV
emission from In-rich
InGaN/GaN single quantum
well structure with compositional
grading." S.Y.
Kwon, M.H. Cho, P. Moon,
H.J. Kim, H. Na, H.C.
Seo, H.J. Kim, Y. Shin
et al, Physica Status
Solidi A-Applied Research,
201(12):2818-2822 (September
2004). [
Abstract ]
·
Shandong University
(China) / Shandong Normal
University (China): "Synthesis
and structural properties
of GaN powders."
H.D. Xiao, H.L. Ma, C.S.
Xue, J. Ma, F.J. Zong,
X.J. Zhang, F. Ji, and
W.R. Hu, Materials
Chemistry and Physics,
88(1):180-184 (November
15, 2004). [
Abstract ]
·
Shanghai Jiao
Tong Univer sity
(China) / East China Normal
University (China) / Shandong
University (China): "Optical
and electrical properties
of polycrystalline GaN
films prepared by post-nitridation
technique." Y.G.
Yang, Y. Ke, and Y.F.
Zhang, Physica B-Condensed
Matter, 352(1-4):1-4
(October 30, 2004). [
Abstract ]
·
Shanghai Jiao
Tong University
(China) / Shandong University
(China): "Excitation
energy dependence of photoluminescence
in polycrystalline GaN
films by post-nitridation
technique." H.L.
Ma, Y.G. Yang, J. Ma,
and X.M. Liu, Diamond
and Related Materials,
13(10):1892-1894 (October
2004). [
Abstract ]
·
Shenzhen University
(China) / Peking University
(China) / Changchun University
of Science & Technology
(China) / Tianjin University
(China): "Influence
of growth temperature
and trimethylindium flow
of InGaN wells on optical
properties of InGaN multiple
quantum-well violet light-emitting
diodes." Z.H.
Li, T.J. Yu, Z.J. Yang,
Y.Z. Tong, G.Y. Zhang,
Y.C. Feng, B.P. Guo, and
H.B. Niu, Chinese Physics
Letters, 21(9):1845-1847
(September 2004). [
Abstract ]
·
Silla University (South
Korea) / Korea Institute
of Science & Technology
(South Korea) / Toyohashi
University of Technology
(Japan) / Korea University
(South Korea) / Instituto
Mexicano del Petroleo
(Mexico): "Photoluminescence
of Er-implanted GaN."
C.S. Son, S. Kim, Y.H.
Kim, I.K. Han, Y.T. Kim,
A. Wakahara, I.H. Choi,
and H.C. Lopez, Journal
of the Korean Physical
Society, 45(4):955-958
(October 2004). [
Abstract ]
·
Soft Impact Ltd (Russia)
/ AF Ioffe Physics &
Technology Institute (Russia)
/ Semiconductor Technology
Research Inc: "Carrier
injection and light emission
in visible and UV nitride
LEDs by modeling."
S.Y. Karpov, K.A. Bulashevich,
I.A. Zhmakin, M.O. Nestoklon,
V.F. Mymrin, and Y.N.
Makarov, Physica Status
Solidi B-Basic Research,
241(12):2668-2671 (October
2004). [
Abstract ]
·
Sophia University
(Japan): "Stimulated
emission from GaN nanocolumns."
A. Kikuchi, K. Yamano,
M. Tada, and K. Kishino,
Physica Status Solidi
B-Basic Research,
241(12):2754-2758 (October
2004). [
Abstract ]
·
Southern University
& A&M College:
"Predictions
of electronic, structural,
and elastic properties
of cubic InN."
D. Bagayoko, L. Franklin,
and G.L. Zhao, Journal
of Applied Physics,
96(8):4297-4301 (October
15, 2004). [
Abstract ]
· Sumitomo Electric Industries Ltd (Japan) / |