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ISSUE 24: SCIENTIFIC LITERATURE (Mid-July to Mid-September 2004) |
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From the Technical Literature The material in this section is selected from scientific and technical papers that became available during the reporting time period. Links to online abstracts are provided. Most online abstracts are freely accessible to the public. A few require journal subscriptions or memberships, and are noted as such. The technical literature section is roughly organized by subject area and, within subjects, alphabetically by institution of the lead author. Use the links below to go directly to a section. A. Materials and Device Fabrication B. Materials and Device Design Properties A. Materials and Device Fabrication
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Academy Sinica (China): "Effects of reactor pressure on GaN-based light-emitting diodes grown on a-plane sapphire substrates." D.S. Li,
H. Chen, H.B. Yu, H.Q. Jia, Q. Huang, and J.M. Zhou, Journal of Crystal Growth, 267(3-4):395-399 (July 1, 2004). [
Abstract ]
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Anna University (India): "Growth of GaN films by chloride vapour phase epitaxy." E. Varadarajan, J. Kumar, and R. Dhanasekaran, Journal
of Crystal Growth, 268(3-4):475-477 (August 1, 2004 ). [
Abstract ]
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ATC Semiconductor Technology & Equipment Joint Stock Co (Russia): "MBE of InGaN/GaN heterostructures using ammonia as a source of nitrogen." S.I. Petrov, A.P. Kaidash, D.M. Krasovitskii, I.A. Sokolov, Y.V. Pogorel'skii, V.P. Chalyi, A.P. Shkurko, M.V. Stepanov et al , Technical Physics Letters, 30(7):580-582 (2004). [
Abstract ]
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BeijingUniversity of Technology (China)/Liaocheng University (China): "Low temperature deposition of crystalline AIN films by bias-enhanced Cat-CVD." G.J. Wang, B. Wang, A.P. Huang, S.L. Xu, M.K. Zhu, B.B. Wang, and H. Yan, Materials Letters, 58(20):2486-2488 (August, 2004 ). [
Abstract ]
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Brno University (Czech Republic): "Deposition and in-situ characterization of ultra-thin films." S. Voborny, M. Kolibal, J.
Mach, J. Cechal, P.B. Babor, S. Prusa, J. Spousta, and T. Sikola, Thin Solid Films, 459(1-2):17-22 (2004 ). [
Abstract ]
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Chinese Academy of Sciences (China): "Growth of crack-free AlGaN film on thin AlN interlayer by MOCVD." R.Q. Jin, J.P. Liu, J.C. Zhang, and H. Yang, Journal of Crystal Growth, 268(1-2):35-40 (July 15, 2004). [
Abstract ]
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Chinese Academy of Sciences (China): "Influence of the deposition time of barrier layers on optical and structural properties of high-efficiency green-light-emitting InGaN/GaN multiple quantum wells." X.H. Zheng, H. Chen, Z.B. Yan, D.S. Li, H.B. Yu, Q. Huang, and J.M. Zhou, Journal of Applied Physics, 96(4):1899-1903 (August 15, 2004). [
Abstract ]
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Chonbuk National University (South Korea):"Growth and field emission of GaN nanowires." T.Y. Kim, S.H. Lee, Y.H. Mo, and K.S. Nahm, Silicon
Carbide and Related Materials 2003, Prts 1 and 2, 457-460(1&2):1585-1588 (2004). [
Abstract ]
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CNR (Italy)/University of Roma La Sapienz (Italy): "Production of clusters and
thin films of nitrides, oxides and carbides by pulsed laser ablation and deposition."
S. Orlando, A. Paladini, A. Santagata, V. Marotta, G.P. Parisi, M. Satta, D. Scuderi, D. Catone et al , International Journal of Photoenergy, 6(1):23-28 (2004). [
Abstract ]
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Department of Materials Science & Engineering (South Korea)/Pohang Accelerator Laboratory (South Korea)/Pohang University of Science & Technology (South Korea):
"Incorporation of oxygen donors in AlGaN." H.W. Jang, J.M. Baik, M.K. Lee, H.J. Shin, and J.L. Lee, Journal of the Electrochemical Society, 151(8):G536-G540
(2004). [
Abstract ]
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Faculte des Sciences (Tunisia)/University of Montpellier (France): "Influence of silane flow on MOVPE grown GaN on sapphire substrate by an in situ SiN treatment." I.
Halidou, Z. Benzarti, T. Boufaden, B. El Jani, S. Juillaguet, and M. Ramonda, Materials Science and Engineering B-Solid State Materials for Advanced Technology, 110(3):251-255 (July 25, 2004). [
Abstract ]
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GIST(South Korea)/Samsung Advanced Institute of Technology (South
Korea): "GaN-based light-emitting diodes with Ni-Mg solid
solution/Au p-type ohmic contact." J.O. Song, D.S. Leem, S.H.
Kim, J.S. Kwak, O.H. Nam, Y. Park, and T.Y. Seong, Solid-State Electronics,
48(9):1597-1600 (September, 2004). [ Abstract
]
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Gwangju Institute of Science & Technology(South Korea)/University of Mysore (India):
"Electrical properties of thermally stable Pt/Re/Au ohmic contacts to p-type GaN." V.R. Reddy, S.H. Kim, J.O. Song, and T.Y. Seong, Solid-State Electronics,
48(9):1563-1568 ( September, 2004 ). [
Abstract ]
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Hong Kong Polytechnic University (China): "Nearly amorphous to epitaxial growth of aluminum nitride films." T.T. Leung and C.W. Ong,
Diamond and Related Materials, 13(9):1603-1608 (September, 2004 ). [
Abstract ]
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Howard University: "Contact mechanisms and design principles for alloyed Ohmic contacts to p-type GaN." S.N.
Mohammad, Philosophical Magazine, 84(24):2559-2578 ( August 21, 2004 ). [URL not available]
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Japan Atomic Energy Research Institute (Japan): "Synthesis of AlxGa1-xN alloy by solid-phase reaction under high pressure." H. Saitoh, W. Utsumi, H. Kaneko, and K. Aoki, Japanese Journal of Applied Physics Part 2-Letters & Express Letters, 43(7b):L981-L983 (July 15, 2004). [
Abstract ]
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Jawaharlal Nehru Centre for Advanced Scientific Research (India): "Formation of B, Al , Ga , and Si nitrides from their oxides: a reactive laser ablation study." G. Raina, G.U. Kulkarni, and C.N.R. Rao, Materials Research Bulletin, 39(9):1271-1277 (
July 2, 2004 ). [
Abstract ]
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Kansas State University:
"Enhanced light extraction in III-nitride ultraviolet photonic crystal light-emitting diodes." J. Shakya, K.H. Kim, J.Y. Lin, and H.X. Jiang, Applied Physics Letters,
85(1):142-144 (July 5, 2004 ). [
Abstract ]
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Leibniz Institute Oberflachenmodifizierung (Germany): "Ion beam assisted MBE of GaN on epitaxial TiN films."
J.W. Gerlach, T. Hoche, F.E. Frost, and B. Rauschenbach, Thin Solid Films, 459(1-2):13-16 (July 1, 2004). [
Abstract ]
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Leipniz Institute Oberflachenmodifizierung (Germany): "Transparent AIN layers formed by metal plasma
immersion ion implantation and deposition." S. Mandl, D. Manova, and B. Rauschenbach, Surface & Coatings Technology,
186(1-2):82-87 (August 2, 2004). [
Abstract ]
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Linkoping University (Sweden)/Helsinki University of Technology (Finland)/Hungarian Academy of Sciences (Hungary)/Lumilog (France):
"Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template." D. Gogova, A. Kasic, H. Larsson, C. Hemmingsson, B.
Monemar, F. Tuomisto, K. Saarinen, L. Dobos et al, Journal of Applied Physics, 96(1):799-806 (July 1, 2004). [
Abstract ]
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National Chiao Tung University (Taiwan):
"Highly reliable GaN-based light-emitting diodes formed by p-In0.1Ga0.9N-ITO structure." K.M. Chang, J.Y. Chu, and C.C. Cheng, IEEE Photonics Technology Letters,
16(8):1807-1809 (August, 2004). [
Abstract ]
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National Institute for Laser Plasma & Radiation Physics (Romania)/Foundation for Research &
Technology Hellas (Greece)/University of Crete (Greece): "Effects of pulse laser duration and ambient nitrogen pressure in PLD of AlN." C. Ristoscu, E.
Gyorgy, I.N. Mihailescu, A. Klini, V. Zorba, and C. Fotakis, Applied Physics A-Materials Science & Processing, 79(4-6):927-929 (September, 2004). [
Abstract ]
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National Taiwan University of Technology (Taiwan): "High
reliability GaN-based light-emitting diodes with photo-enhanced wet
etching." L.C. Chen and Y.L. Huang, Solid-State Electronics,
48(7):1239-1242 (July, 2004 ). [ Abstract
]
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National University of Singapore: "Study of activation of beryllium
implantation in gallium nitride." H.T. Wang, L.S. Tan, and E.F. Chor,
Journal of Crystal Growth, 268(3-4):489-493 (August 1, 2004). [
Abstract ]
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National University of Singapore/Institute of Materials Research & Engineering (Singapore): "Inverted hexagonal pits formation in AlInGaN
epilayer." C.B. Soh, W. Liu, S.J. Chua, S. Tripathy, and D.Z. Chi,
Journal of Crystal Growth, 268(3-4):478-483 (August 1, 2004). [
Abstract ]
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North Carolina State University: "Epitaxial GaN on Si(111): Process
control of SiNx interlayer formation." T.A. Rawdanowicz and J. Narayan,
Applied Physics Letters, 85(1):133-135 (July 5, 2004). [
Abstract ]
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North Carolina State University: "Model for the influence of boron
impurities on the morphology of AIN grown by physical vapor transport."
D.W. Brenner, R. Schlesser, Z. Sitar, R. Dalmau, R. Collazo, and Y. Li, Surface
Science, 560(1-3):L202-L206 ( July 1, 2004). [
Abstract ]
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North Carolina State University: "Selective etching of GaN from
AlGaN/GaN and AlN/GaN structures." J.A. Grenko, C.L. Reynolds, R.
Schlesser, K. Bachmann, Z. Rietmeier, R.F. Davis, and Z. Sitar, MRS
Internet Journal of Nitride Semiconductor Research, 9(5):5 (2004). [
Abstract ]
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Peking University (China): "Ohmic contact formation of Ti/Al/Ni/Au
to n-GaN by two-step annealing method." Z.Z. Chen, Z.X. Qin, C.Y. Hu,
X.D. Hu, T.J. Yu, Y.Z. Tong, X.M. Ding, and G.Y. Zhang, Materials
Science and Engineering B-Solid State Materials for Advanced Technology,
111(1):36-39 (August 15, 2004). [
Abstract ]
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Peking University (China)/Chinese Academy of Sciences (China): "Effects
of oxidation by O-2 plasma on formation of Ni/Au ohmic contact to p-GaN."
Z.Z. Chen, Z.X. Qin, Y.Z. Tong, X.D. Hu, T.J. Yu, Z.J. Yang, L.S. Yu, G.Y.
Zhang et al , Journal of Applied Physics, 96(4):2091-2094
(August 15, 2004). [
Abstract ]
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Rensselaer Polytechnic Institute/Uniroyal Optoelectronics: "GaInN/GaN
growth optimization for high-power green light-emitting diodes." C.
Wetzel, T. Salagaj, T. Detchprohm, P. Li, and J.S. Nelson, Applied
Physics Letters, 85(6):866-868 (August 9, 2004). [
Abstract ]
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Russian Academy of Sciences (Russia): "Split and sealing of
dislocated pipes at the front of a growing crystal." M.Y. Gutkin and
A.G. Sheinerman, Physica Status Solidi B-Basic Research,
241(8):1810-1826 (July, 2004). [
Abstract ]
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Shandong Normal University (China): "Fabrication of GaN nanowires by
ammoniating Ga2O3/Al2O3 thin films deposited on Si(111) with radio frequency
magnetron sputtering." C.S. Xue, Q.Q. Wei, Z.C. Sun, Z.H. Dong, H.B.
Sun, and L.W. Shi, Nanotechnology, 15(7):724-726 (July, 2004). [
Abstract ]
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Singapore MIT Alliance (Singapore)/National University of Singapore / Institute of
Materials Research & Engineering (Singapore)/MIT: "Fabrication
and properties of nanoporous GaN films." Y.D. Wang, S.J. Chua, M.S.
Sander, P. Chen, S. Tripathy, and C.G. Fonstad, Applied Physics
Letters, 85(5):816-818 (August 2, 2004). [
Abstract ]
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SUNY Stony Brook: "Transport phenomena in an aluminum nitride
induction heating sublimation growth system." B. Wu and H. Zhang,
International Journal of Heat and Mass Transfer, 47(14-16):2989-3001 (July, 2004 ). [
Abstract ]
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Tokyo Institute of Technology (Japan)/National Institute for Materials Science
(Japan)/Japan Science & Technology Corp (Japan): "Structural
and interfacial stabilities of epitaxial (11(2)over-bar0)-oriented wurtzite AlN
films grown on lattice-matched MnS buffered Si(100)." J.H. Song, Y.Z.
Yoo, T. Chikyow, and H. Koinuma, Applied Physics A-Materials Science
& Processing, 79(3):457-460 (August, 2004). [
Abstract ]
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Tokyo University of Agriculture & Technology (Japan): "Trade-off between thickness and temperature ramping rate of GaN buffer layer studied for
high quality GaN growth on GaAs (I II)A substrate." H. Murakami, Y. Kangawa, Y. Kumagai, and A. Koukitu, Journal of Crystal Growth , 268(1-2):1-7 (July 15, 2004 ). [
Abstract ]
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University of California-Santa Barbara:
"Gallium adsorption onto (11(2)over-bar0) gallium nitride surfaces." M. Mclaurin, B. Haskell, S. Nakamura, and J.S. Speck, Journal
of Applied Physics, 96(1):327-334 (July 1, 2004). [
Abstract ]
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University of California-Santa Barbara:
"Removal of thick (> 100nm) InGaN layers for optical devices using band-gap-selective photoelectrochemical etching." E.D. Haberer, R. Sharma, A.R. Stonas, S. Nakamura, S.P. Denbaars, and E.L. Hu, Applied Physics Letters,
85(5):762-764 (August 2, 2004). [
Abstract ]
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University of Florida: "Effect of in-situ chemical surface treatments on AlN/SiC interfacial contamination." D.O.
Stodilka, B.P. Gila, C.R. Abernathy, E. Lambers, F. Ren, and S.J. Pearton, Silicon Carbide and Related Materials 2003, Prts 1 and 2, 457-460(1&2):1377-1380 (2004). [
Abstract ]
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University of Paris (France):"Unifying description of the
wurtzite-to-rocksalt phase transition in wide-gap semiconductors: The effect of
d electrons on the elastic constants." A.M. Saitta and F. Decremps,
Physical Review B, 70(3):035214 (July, 2004). [
Abstract ]
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University of Sheffield (UK): "High-reflectivity AlxGa1-xN/AlyGa1-yN distributed Bragg reflectors with peak wavelength around
350 nm." T. Wang, R.J. Lynch, P.J. Parbrook, R. Butte, A. Alyamani, D. Sanvitto, D.M. Whittaker, and M.S. Skolnick, Applied Physics Letters,
85(1):43-45 (July 5, 2004). [
Abstract ]
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University of Sheffield ( UK )/Tianjin University ( China )/University of Tokushima (Japan): "Highly improved performance of a 350 nm ultraviolet light-emitting diode containing AlxGa1-xN/AlyGa1-y N distributed Bragg reflectors." T. Wang, P.J. Parbrook, C.N. Harrison, J.P. Ao, and Y. Ohno, Journal of Crystal Growth,
267(3-4):583-587 (July 1, 2004). [
Abstract ]
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University of Strathclyde (UK): "Fabrication of matrix-addressable micro-LED arrays based on a novel etch technique." H.W. Choi, C.W.
Jeon, and M.D. Dawson, Journal of Crystal Growth, 268(3-4):527-530 (August 1, 2004). [
Abstract ]
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Warsaw University of Technology (Poland)/Technical University of Lodz (Poland)/Polish
Academy of Sciences (Poland): "Peculiarities of thin film
deposition by means of reactive impulse plasma assisted chemical vapor
deposition (RIPACVD) method." A. Werbowy, A. Olszyna, K. Zdunek, A.
Sokolowska, J. Szmidt, and A. Barcz, Thin Solid Films,
459(1-2):160-164 (July 1, 2004). [
Abstract ]
B. Materials and Device Design Properties
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Anna University (India): "Optical properties of high energy tin
(Sn5+) ion irradiated metal-organic chemical vapor deposition grown GaN on
sapphire." P. Perumal, S. Ganaprakasam, and B. Krishnan, Japanese
Journal of Applied Physics Part 1-Regular Papers Short Notes & Review
Papers, 43(7a):4150-4152 (July, 2004). [
Abstract ]
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Aristotle University of Thessalonik (Greece): "Atomic structures and
energies of partial dislocations in wurtzite GaN." J. Kioseoglou, G.P.
Dimitrakopulos, P. Komninou, and T. Karakostas, Physical Review B,
70(3):035309 (July, 2004). [
Abstract ]
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CEA Grenoble (France)/NGK Insulators Ltd (Japan): "Influence of
AlN overgrowth on structural properties of GaN quantum wells and quantum dots
grown by plasma-assisted molecular beam epitaxy." N. Gogneau, D.
Jalabert, E. Monroy, E. Sarigiannidou, J.L. Rouviere, T. Shibata, M. Tanaka,
J.M. Gerard et al , Journal of Applied Physics, 96(2):1104-1110
(July 15, 2004 ). [
Abstract ]
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Chinese Academy of Sciences (China): "Dependence of leakage current
on dislocations in GaN-based light-emitting diodes." D.S. Li, H.
Chen, H.B. Yu, H.Q. Jia, Q. Huang, and J.M. Zhou, Journal of
Applied Physics, 96(2):1111-1114 (July 15, 2004). [
Abstract ]
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Chinese Academy of Sciences (China): "Structural and optical
characteristics of InGaN/GaN multi-quantum wells grown on a- and c-plane
sapphire substrates." H.B. Yu, H. Chen, D.S. Li, and J.M. Zhou,
Chinese Physics Letters, 21(7):1323-1326 (July, 2004). [
Abstract ]
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Chinese Academy of Sciences (China): "Structure and photoluminescence
studies of Pr-implanted GaN." S.F. Song, W.D. Chen, F.H. Su, J.J. Zhu,
K. Ding, and C.C. Hsu, Journal of Crystal Growth,
267(3-4):400-404 (July 1, 2004). [
Abstract ]
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Chinese Academy of Sciences (China)/Nanjing University (China): "Scattering
times in AlGaN/GaN two-dimensional electron gas from magnetotransport
measurements." Z.J. Qiu, Y.S. Gui, T. Lin, J. Lu, N. Tang, B. Shen, N.
Dai, and J.H. Chu, Solid State Communications, 131(1):37-40 (July, 2004). [
Abstract ]
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Chinese Academy of Sciences (China)/Wuhan University (China): "The
influence of AlN buffer layer thickness on the properties of GaN epilayer."
J.C. Zhang, D.G. Zhao, J.F. Wang, Y.T. Wang, J. Chen, J.P. Liu, and H. Yang,
Journal of Crystal Growth, 268(1-2):24-29 (July 15, 2004). [
Abstract ]
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Chonnam National University (South Korea)/LG Innotek (South Korea): "
Effects of dislocations on the luminescence of GaN/InGaN multi-quantum-well
light-emitting-diode layers." Y.S. Choi, J.H. Park, S.S. Kim, H.J.
Song, S.H. Lee, J.J. Jung, and B.T. Lee, Materials Letters,
58(21):2614-2617 (August, 2004). [
Abstract ]
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Cornell University: "Atomic level scanning transmission electron microscopy characterization of GaN/AlN quantum wells."
K.A. Mkhoyan, E.J. Kirkland, J. Silcox, and E.S. Alldredge, Journal of Applied Physics, 96(1):738-746 (July 1, 2004). [ Abstract ]
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Fraunhofer Inst Zuverlassigkeit & Mikrointegrat (Germany) /Technical University of Munich (Germany): "High quality heteroepitaxial AlN films on diamond." G. Vogg, C.R. Miskys, J.A. Garrido, M. Hermann, M. Eickhoff, and M. Stutzmann, Journal of
Applied Physics, 96(1):895-902 (July 1, 2004). [
Abstract ]
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GE Company /AXT Optoelectronics: "Electrical characteristics of InGaN/GaN light-emitting diodes grown on GaN and sapphire substrates."
X.A. Cao, J.M. Teetsov, M.P. D'evelyn, D.W. Merfeld, and C.H. Yan, Applied Physics Letters, 85(1):7-9 (July 5, 2004). [
Abstract ]
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Hosei University (Japan)/Kyoto University (Japan):"Ion channeling and Raman scattering studies of the lattice disorder and residual strain in neutron
irradiated GaN." K. Kuriyama, T. Tokumasu, H. Sano, and M. Okada, Solid State Communications, 131(1):31-35 (July, 2004). [
Abstract ]
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Ingenieurburo Wep (Germany)/University of Erlangen Nurnberg (Germany):
"Electrochemical etching and CV-Profiling of GaN."
T. Wolff, M. Rapp, and T. Rotter, Physica Status Solidi A-Applied
Research, 201(9):2067-2075 (July, 2004). [ Abstract
]
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Institute of Semiconductor Physics (Lithuania): "Additional phonon modes and close satellite valleys crucial for electron transport in hexagonal gallium
nitride." R. Brazis and R. Raguotis, Applied Physics Letters, 85(4):609-611 (July 26, 2004). [
Abstract ]
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Lawrence Berkeley National Laboratory/ University of California-Berkeley/Oriol Inc /Pacific Northwest National Laboratory:
"Effect of gallium nitride template layer strain on the growth of InxGa1-xN/GaN multiple quantum well light emitting diodes." M.C. Johnson, E.D. Bourret-Courchesne, J. Wu,
Z. Liliental-Weber, D.N. Zakharov, R.J. Jorgenson, T.B. Ng, D.E. Mccready et al , Journal of Applied Physics, 96(3):1381-1386 (August 1, 2004 ). [
Abstract ]
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Leibniz Institute of Surface Modification (Germany)/University of Leipzig (Germany): "Stability and band gaps of As-rich and N-rich GaAsN alloys: Density-functional supercell calculations."
A. Jenichen and C. Engler, Physica Status Solidi B-Basic Research, 241(8):1883-1895 (July, 2004). [
Abstract ]
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Linkoping University (Sweden): "Polarized photoluminescence study of free and bound excitons in free-standing GaN." P.P. Paskov, T. Paskova, P.O. Holtz, and B. Monemar, Physical Review B,
70(3):035210 (July, 2004). [
Abstract ]
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Linkoping University (Sweden)/University of Leipzig (Germany): "Strain-related structural and vibrational properties of thin epitaxial AlN layers." V.
Darakchieva, J. Birch, M. Schubert, T. Paskova, S. Tungasmita, G. Wagner, A. Kasic, and B. Monemar, Physical Review B, 70(4):045411 (July, 2004). [
Abstract ]
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Mie University (Japan)/ University of Tokushima (Japan)/University of Sheffield (UK): "Influence of undoped GaN layer thickness to the performance of AlGaN/GaN-based ultraviolet light-emitting diodes." Y.H. Liu, H.D. Li, J.P. Ao, Y.B. Lee, T. Wang, and
S. Sakai, Journal of Crystal Growth, 268(1-2):30-34 (July15, 2004). [
Abstract ]
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Myong Ji University (South Korea)/University of California-Irvine: "The thermal effect of GaN Schottky diode on its I-V characteristics." S.W. Chung, W.J. Hwang, C.C. Lee, and M.W. Shin,
Journal of Crystal Growth, 268(3-4):607-611 (August 1, 2004). [
Abstract ]
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Nanjing University (China): "Influence of polarizations and doping in AlGaN barrier on the two-dimensional electron-gas in AIGaN/GaN heterostruture." Y.C. Kong, Y.D. Zheng, C.H. Zhou, Y.Z. Deng, S.L. Gu,
B. Shen, R. Zhang, P. Han et al , Acta Physica Sinica, 53(7):2320-2324 (July, 2004 ). [No URL available]
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National Changhua University of Education (Taiwan)/Hsiuping Institute of Technology (Taiwan): "Vegard's law deviation in lattice constant and band gap bowing parameter of zincblende InxGa1-xN." Y.K. Kuo, B.T. Liou, S.H. Yen, and H.Y. Chu, Optics Communications,
237(4-6):363-369 (July 15, 2004). [
Abstract ]
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National Renewable Energy Laboratory/University of Utrecht (Netherlands):
"Field-dependent charge carrier dynamics in GaN: Excitonic effects." J. Van De Lagemaat, D. Vanmaekelbergh, and J.J. Kelly, Applied Physics Letters,
85(6):958-960 (August 9, 2004). [
Abstract ]
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National Taiwan Ocean University (Taiwan)/Kansas State University : "Optical properties of GaN/AlN multiple quantum wells." T.Y. Lin, Y.M. Sheu, Y.F. Chen, J.Y.
Lin, and H.X. Jiang, Solid State Communications, 131(6):389-392 (August, 2004 ). [
Abstract ]
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National University of Singapore: "Depth-resolved luminescence imaging of epitaxial lateral overgrown GaN using ionoluminescence."
E.J. Teo, A.A. Bettiol, T. Osipowicz, M. Hao, S.J. Chua, and Y.Y. Liu, Journal of Crystal Growth, 268(3-4):494-498 (August 1, 2004). [
Abstract ]
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National University of Singapore: "Effects of surface plasma treatment on n-GaN ohmic contact formation." L.K. Li, L.S. Tan, and
E.F. Chor, Journal of Crystal Growth, 268(3-4):499-503 (August 1, 2004). [
Abstract ]
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National University of Singapore/ Institute of Materials Research & Engineering (Singapore): "Assignment of deep levels causing yellow luminescence in GaN." C.B. Soh, S.J. Chua, H.F. Lim,
D.Z. Chi, S. Tripathy, and W. Liu, Journal of Applied Physics, 96(3):1341-1347 (August 1, 2004). [
Abstract ]
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National University of Singapore/Institute of Materials Research & Engineering (Singapore): "Characterization of AlInGaN quaternary epilayers grown by metal organic chemical vapor deposition." W. Liu, C.B. Soh, P. Chen, and S.J. Chua, Journal of Crystal Growth, 268(3-4):509-514 (August 1, 2004). [
Abstract ]
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National University of Singapore/ Institute of Materials Research & Engineering (Singapore): "Optical transitions in InGaN/GaN quantum wells: effects of the piezoelectric field." X.H. Zhang, W. Liu, and S.J. Chua,
Journal of Crystal Growth, 268(3-4):521-526 (August 1, 2004). [
Abstract ]
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National University of Singapore/NUS (Singapore)/Institute of Materials Research & Engineering (Singapore)/MIT: "Structural analysis of metalorganic chemical vapor deposited AlN nucleation layers on Si(111) ." K.Y. Zang, L.S. Wang, S.J. Chua, and C.V. Thompson, Journal of Crystal Growth, 268(3-4):515-520 (August 1, 2004). [
Abstract ]
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North Carolina State University/US Army Research Office: "Envelope-function analysis of wurtzite InGaN/GaN quantum well light emitting diodes." D. Xiao, K.W. Kim, and J.M. Zavada, Journal of Applied Physics,
96(1):723-728 (July 1, 2004). [
Abstract ]
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Osaka University (Japan)/Kyushu University (Japan)/Yamagata University (Japan)/Communications Research Laboratories (Japan): "Interface structures of AlN/MgB2 thin films sputtered on sapphire c- and r-plane." H. Abe, M. Naito, W.J. Moon, K. Kaneko, A. Saito, and Z. Wang, Journal of Applied Physics, 96(4):2343-2346 (August 15, 2004). [
Abstract ]
·
Peking University (China): "Study of different type of dislocations in GaN thin films." L.P. Yu, J.Y. Shi, Y.Z. Wang, and H. Zhang, Journal of Crystal Growth, 268(3-4):484-488 (August 1, 2004 ). [
Abstract ]
·
Polish Academy of Sciences (Poland)/Wroclaw Technical University (Poland): "Yellow emission of GaN nanocrystals embedded in a silica xerogel matrix." M.
Nyk, J.M. Jablonski, W. Strek, and J. Misiewicz, Optical Materials, 26(2):133-136 (July, 2004). [
Abstract ]
·
Rensselaer Polytechnic Institute/Sensor Electronic Technology Inc/University of South Carolina/Vilnius State University (Lithuania): "Photoluminescence of AlGaN grown on bulk AlN substrates." G. Tamulaitis, I. Yilmaz, M.S. Shur, Q. Fareed, R. Gaska, and M.A. Khan, Applied Physics Letters,85(2):206-208 (July 12, 2004). [
Abstract ]
·
Sandia National Laboratories: "N vacancy diffusion and trapping in Mg-doped wurtzite GaN." A.F. Wright and T.R. Mattsson, Journal of Applied Physics, 96(4):2015-2022 (August 15, 2004). [
Abstract ]
·
Singapore MIT Alliance /Institute of Materials Research & Engineering (Singapore)/Chinese Academy of Sciences (China): "Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures." Z. Chen, S.J. Chua, H.R. Yuan, X.L.
Liu, D.C. Lu, P.D. Han, and Z.G. Wang, Journal of Crystal Growth, 268(3-4):504-508 (August 1, 2004). [
Abstract ]
·
Texas Tech University: "Specific heat and entropy of GaN."M. Sanati and S.K. Estreicher, Journal of Physics-Condensed Matter, 16(28):L327-L331 (July 21, 2004 ). [
Abstract ]
·
Tohoku University (Japan)/Chinese Academy of Sciences (China)/University of Illinois: "Bilayer-by-bilayer etching of 6H-GaN(0001) with Cl." S. Kuwano, Q.Z. Xue, Y. Asano, Y. Fujikawa, Q.K. Xue, K.S. Nakayama, T. Nagao, and T. Sakurai, Surface Science, 561(2-3):L213-L217 (July 20, 2004). [
Abstract ]
·
Tokyo Institute of Technology (Japan)/Presto (Japan): "A quaternary magnetic alloy semiconductor (Ga,In,Mn)N." T. Kondo, J.J. Hayafuji, A. Oiwa, and H. Munekata, Japanese Journal of Applied
Physics Part 2-Letters & Express Letters, 43(7a):L851-L854 (July 1, 2004). [
Abstract ]
·
Toshiba Co Ltd (Japan): "Sub-picosecond modulation by intersubband transition in ridge waveguide with GaN/AIN quantum wells." N. Iizuka, K. Kaneko, and N. Suzuki, Electronics Letters, 40(15):962-963
(July 22, 2004 ). [
Abstract ]
·
Toyota Central Research & Development Labs Inc (Japan): "Effect of p-type activation ambient on acceptor levels in Mg-doped GaN." Y. Nakano, O. Fujishima, and T. Kachi, Journal of Applied Physics,
96(1):415-419 (July 1, 2004). [
Abstract ]
·
Tsing Hua University (China): "Ga2O3 and GaN semiconductor hollow spheres." X.M. Sun and Y.D. Li, Angewandte Chemie-International Edition, 43(29):3827-3831 (2004). [
Abstract ]
·
Universidad Politecnica de Madrid (Spain)/CNRS (France)/ETSI Industrial (Spain): "Dominant carrier recombination mechanisms in GaInNAs/GaAs quantum well light-emitting diodes." J.M. Ulloa, A. Hierro, J. Miguel-Sanchez, A. Guzman, E.
Tournie, J.L. Sanchez-Rojas, and E. Calleja, Applied Physics Letters, 85(1):40-42 (July 5, 2004). [
Abstract ]
·
University a Belkaid (Algeria)/University of Grenoble (France)/University of Technology Belfort Montbeliard (France): "Prediction study of elastic properties under pressure effect for zincblende BN, AlN, GaN and InN." M.B. Kanoun, A.E. Merad, G. Merad, J. Cibert, and H. Aourag, Solid-State Electronics, 48(9):1601-1606 (September, 2004). [
Abstract ]
·
University Jena (Germany)/University of Saarland (Germany)/CERN (Switzerland): "Radiotracer spectroscopy on group II acceptors in GaN." F. Albrecht, G. Pasold, J. Grillenberger, U. Reislohner, M. Dietrich, and W. Witthuhn, Silicon Carbide and Related Materials 2003, Prts 1 and 2, 457-460(1&2):1609-1612 (2004). [
Abstract ]
·
University of Bourgogne (France)/University a Belkaid (Algeria)/University of Technology Belfort (France): "Prediction of structural and thermodynamic properties of zinc-blende AlN: molecular dynamics simulation." S. Goumri-Said, M.B. Kanoun, A.E. Merad, G. Merad, and H. Aourag,
Chemical Physics, 302(1-3):135-141 (July 12, 2004). [
Abstract ]
·
University of California-Berkeley: "Crystallographic alignment of high-density gallium nitride nanowire arrays." T. Kuykendall, P.J. Pauzauskie, Y.F. Zhang, J. Goldberger, D. Sirbuly, J. Denlinger, and P.D. Yang, Nature Materials, 3(8):524-528 (August, 2004). [
Abstract ]
·
University of California-Irvine: "Temperature measurement of visible light-emitting diodes using nematic liquid crysal thermography with laser illumination." C.C. Lee and J. Park, IEEE Photonics Technology Letters,
16(7):1706-1708 (July, 2004). [
Abstract ]
·
University of California-Merced/University of California-Berkeley/Cornell University: "V-shaped inversion domains in InN grown on c-plane sapphire." J. Jasinski, Z. Liliental-Weber, H. Lu, and W.J. Schaff, Applied Physics Letters, 85(2):233-235 (July 12, 2004). [
Abstract ]
·
University of California-San Diego/Veeco Turbodisc Operations: "Observation of subsurface monolayer thickness fluctuations in InGaN/GaN quantum wells by
scanning capacitance microscopy and spectroscopy." X. Zhou, E.T. Yu, D. Florescu, J.C. Ramer, D.S. Lee, and E.A. Armour, Applied Physics Letters, 85(3):407-409 (July 19, 2004 ). [
Abstract ]
·
University of Essex (UK)/Balikesir University (Turkey)/Cornell University: "Momentum relaxation of electrons in n-type bulk GaN." D. Zanato, S. Gokden, N.
Balkan, B.K. Ridley, and W.J. Schaff, Superlattices and Microstructures, 34(1-2):77-85 (July , 2004 -August 31, 2004). [
Abstract ]
·
University of Glasgow (UK): "Optimization of transmission properties of two-dimensional photonic crystal channel waveguide bends through local lattice deformation." I. Ntakis, P. Pottier, and R.M. De La Rue, Journal
of Applied Physics, 96(1):12-18 (July 1, 2004). [
Abstract ]
·
University of Hong Kong (China): "The depth-profiled carrier concentration and scattering mechanism in undoped GaN film grown on sapphire."
Y. Huang, X.D. Chen, S. Fung, C.D. Beling, C.C. Ling, Z.F. Wei, S.J. Xu, and C.Y. Zhi, Journal of Applied Physics, 96(2):1120-1126 (July 15, 2004). [
Abstract ]
·
University of Idaho/US Naval Research Laboratory: "Photoluminescence dynamics in ensembles of wide-band-gap nanocrystallites and powders."
L. Bergman, X.B. Chen, J.L. Morrison, J. Huso, and A.P. Purdy, Journal of Applied Physics, 96(1):675-682 (July 1, 2004). [
Abstract ]
·
University of Illinois: "Surface-optical phonon assisted transitions in quantum dots." C. Chen, M. Dutta, and M.A. Stroscio, Journal
of Applied Physics, 96(4):2049-2054 (August 15, 2004). [
Abstract ]
·
University of Liverpool (UK)/ENSICAEN (France): "Nanoscale EELS analysis of InGaN/GaN heterostructures." A.M. Sanchez, M. Gass, A.J. Papworth, P.J. Goodhew, and P. Ruterana, Physical Review B, 70(3):035325 (July, 2004 ). [
Abstract ]
·
University of Montpellier (France)/CNRS (France): "Photoluminescence energy and linewidth in GaN/AlN stackings of quantum dot planes." S. Kalliakos, T. Bretagnon, P. Lefebvre, T. Taliercio, B. Gil, N. Grandjean, B. Damilano, A. Dussaigne et al , Journal of Applied Physics,
96(1):180-185 (July 1, 2004). [
Abstract ]
·
University of Notre Dame: "Dipole scattering in highly polar semiconductor alloys." W. Zhao and D. Jena, Journal of Applied Physics, 96(4):2095-2101 (August 15, 2004). [
Abstract ]
·
University of Poona (India)/Victoria University (New Zealand): "Field emission from a-GaN films deposited on Si (100)." D.S. Joag, D.J. Late, and U.D. Lanke, Solid State Communications, 130(5):305-308 (2004). [
Abstract ]
·
University of Port Elizabeth (South Africa)/CNRS (France): "Correlation of transport and optical properties of Si-doped Al(0.23)G(0.77)N."
G.R. James, A.W.R. Leitch, F. Omnes, M.C. Wagener, and M. Leroux, Journal of Applied Physics, 96(2):1047-1052 (July 15, 2004). [
Abstract ]
·
University of Shizuoka (Japan): "Investigations of morphology, purity and crystal defects of the InN pillar crystals prepared by means of halide chemical vapor deposition under atmospheric pressure." N. Takahashi, A. Niwa, and T. Nakamura, Journal of Physics and Chemistry of Solids,
65(7):1259-1263 (July, 2004). [
Abstract ]
·
University of South Carolina/Sensor Electronic Technology Inc: "AlGaN-based 280 nm light-emitting diodes with continuous wave powers in excess of 1.5 mW." W.H. Sun, J.P. Zhang, V. Adivarahan, A. Chitnis, M. Shatalov, S. Wu, V.Mandavilli, J.W. Yang et al , Applied Physics Letters, 85(4):531-533 (July 26, 2004). [
Abstract ]
·
University of Tokushima (Japan): "Schottky barrier height determination by capacitance-voltage measurement on n-GaN with exponential doping profile."
N. Kubota, J.P. Ao, D. Kikuta, and Y. Ohno, Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, 43(7a):4159-4160 (July, 2004). [
Abstract ]
·
University of Tokyo (Japan): "Exciton and biexciton luminescence from single hexagonal GaN/AlN self-assembled quantum dots." S. Kako, K.
Hoshino, S. Iwamoto, S. Ishida, and Y. Arakawa, Applied Physics Letters, 85(1):64-66 (July 5, 2004). [
Abstract ]
·
University of Tokyo(Japan)/Kyoto University (Japan)/University of Missouri: "First-principles calculations of ELNES and XANES of selected wide-gap materials: Dependence on crystal structure and orientation." T. Mizoguchi, I. Tanaka, S. Yoshioka, M. Kunisu, T. Yamamoto, and W.Y. Ching, Physical Review B, 70(4):045103 (July, 2004). [
Abstract ]
·
University of Tsukuba (Japan)/High Energy Accelerator Research Organization (Japan): "Concentration quenching of Eu-related luminescence
in Eu-doped GaN." H.J. Bang, S. Morishima, J. Sawahata, J. Seo, M. Takiguchi, M. Tsunemi, K. Akimoto, and M. Nomura, Applied Physics Letters, 85(2):227-229 (July 12, 2004). [
Abstract ]
·
University of Western Australia: "Contribution of hole trap to persistent photoconductivity in n-type GaN." S. Cai, G. Parish, J.M. Dell, and
B.D. Nener, Journal of Applied Physics, 96(2):1019-1023 (July 15, 2004). [
Abstract ]
·
University of Witwatersrand (South Africa)/ Max Planck Institute for Metals Research (Germany)/Technical University of Darmstadt (Germany): "Potential
gallium oxynitrides with a derived spinel structure." J.E. Lowther, T.
Wagner, I. Kinski, and R. Riedel, Journal of Alloys and Compounds,
376(1-2):1-4 (August 11, 2004). [
Abstract ]
·
Vilnius State University (Lithuania)/High Pressure Research Center (Poland): "Optical gain in homoepitaxial GaN." S. Jursenas, N. Kurilcik, G. Kurilcik, S. Miasojedovas, A. Zukauskas, T. Suski, P. Perlin, M. Leszczynski et al ,
Applied Physics Letters, 85(6):952-954 (August 9, 2004). [
Abstract ]
·
Vilnius State University(Lithuania)/University of South Carolina: "Increase of free carrier lifetime in nonpolar a-plane GaN grown by epitaxial lateral overgrowth." S. Jursenas, E. Kuokstis, S. Miasojedovas, G. Kurilcik, A. Zukauskas, C.Q. Chen, J.W. Yang, V. Adivarahan et al , Applied Physics Letters, 85(5):771-773 (August 2, 2004). [
Abstract ]
·
Virginia Commonwealth University/National Cheng Kung University (Taiwan): "Studies of InGaN/GaN multiquantum-well green-light-emitting diodes grown by
metalorganic chemical vapor deposition." K.S. Ramaiah, Y.K. Su, S.J. Chang, C.H. Chen, F.S. Juang, H.P. Liu, and I.G. Chen, Applied
Physics Letters, 85(3):401-403 (July 19, 2004). [
Abstract ]
·
Wayne State University: "Propagation of a shear-horizontal surface acoustic mode in a periodically grooved AlN/Al2O3 microstructure." J. Xu, J.S. Thakur, F. Zhong, H. Ying, and G.W. Auner, Journal of Applied Physics, 96(1):212-217 (July 1, 2004). [
Abstract ]
·
Xidian University (China): "Temperature dependence of Hall electron density of GaN-based heterostructures." J.F. Zhang, J.C. Zhang, and Y. Hao, Chinese Physics, 13(8):1334-1338 (August, 2004). [
Abstract ]
·
Zhejiang University (China): "Geometric and electronic structures of small GaN clusters." B. Song and P.L. Cao, Physics Letters A,
328(4-5):364-374 (August 2, 2004). [
Abstract ]
C. Packaging and Reliability
·
Light Prescriptions Innovators LLC: "Simultaneous multiple surface design of compact air-gap collimators for light-emitting diodes." F.
Munoz, P. Benitez, O. Dross, J.C. Minano, and B. Parkyn, Optical Engineering, 43(7):1522-1530 (July, 2004). [
Abstract ]
·
Nanyang Technological University (Singapore): "Photoluminescence of sol-gel-derived Y2O3: Eu3+ thin-film phosphors with Mg2+ and Al3+ co-doping."
M.K. Chong, K. Pita, and C.H. Kam, Applied Physics A-Materials Science & Processing, 79(3):433-437 (August, 2004). [
Abstract ]
·
Rensselaer Polytechnic Institute: "Solid-state lighting: failure analysis of white LEDs." N. Narendran, Y. Gu, J.P. Freyssinier, H. Yu, and L. Deng, Journal of Crystal Growth, 268(3-4):449-456 (August
1, 2004). [
Abstract ]
·
University of California-Santa Barbara/Mitsubishi Chemical Corp (Japan): "Novel red phosphors for solid state lighting; the system Bi(x)Ln(1-x)VO(4); Eu3+/Sm3+
(Ln = Y, Gd)." S. Neeraj, N. Kijima, and A.K. Cheetham, Solid State Communications, 131(1):65-69 (July, 2004). [
Abstract ]
·
University of Marburg (Germany): "Optimized additive mixing
of colored light-emitting diode sources." H. Ries, I. Leike, and J. Muschaweck, Optical Engineering, 43(7):1531-1536 (July, 2004). [
Abstract ]
·
University of Technology Sydney (Australia): "Colour mixing LEDs with
short microsphere doped acrylic rods." C. Deller, G. Smith, and J. Franklin, Optics Express, 12(15):3327-3333 (July 26, 2004). [
Abstract ]
D. Other LED Lighting
·
Atomic Energy Authority (Egypt )/Al Azhar University (Egypt):"Performance analysis and stability testing of a new structure of optoelectronic integrated device." M.B. El-Mashade, M. Ashry, S.M. Eladl, and M.S. Rageh, Microelectronics Journal, 35(7):585-589 (July, 2004). [
Abstract ]
·
General Electric Corp/Arizona State University/North Carolina State University: "Growth and characterization of ZnO thin films on GaN epilayers." T.P. Smith, H.A. Mclean, D.J. Smith, P.Q. Miraglia, A.M. Roskowski, and R.F. Davis, Journal of Electronic Materials, 33(7):826-832 (July, 2004). [
Abstract ]
·
Jeonbuk National University (South Korea)/Korea Photon Technology Institute (South Korea): "Raman scattering and photoluminescence of As ion-implanted ZnO single crystal." T.S. Jeong,
M.S. Han, C.J. Youn, and Y.S.Park, Journal of Applied Physics, 96(1):175-179 ( July 1, 2004). [
Abstract ]
·
Los Alamos National Laboratory: "Quantum confinement contribution to porous silicon photoluminescence spectra." D.W. Cooke, R.E. Muenchausen, B.L. Bennett, L.G. Jacobsohn, and M. Nastasi, Journal of Applied Physics, 96(1):197-203 (July 1, 2004). [
Abstract ]
·
Middle Eastern Technical University (Turkey): "Electronic structure of Ge-5, Ge-17, Ge-5-O, and Ge-5-SiO2 nanoparticles." S. Katircioglu, Journal of Molecular Structure-Theochem, 680(1-3):83-89 (July 5, 2004). [
Abstract ]
·
Nanjing University (China)/City University of Hong Kong (China): "Optical emission from silicon-based SiO2 islands fabricated by anodic alumina templates." G.S. Huang, X.L. Wu, Y.F. Mei, P. Chen, and P.K. Chu, Journal of Applied Physics, 96(3):1443-1446 (August 1, 2004 ). [
Abstract ]
·
National Chiao Tung University (China): "Excitonic polaron and phonon assisted photoluminescence of ZnO nanowires." H.C. Hsu and W.F. Hsieh, Solid State Communications, 131(6):371-375 (August, 2004). [
Abstract ]
·
National Institute for Materials Science (Japan): "Photoluminescence of cerium-doped alpha-SiAlON materials." R.J. Xie, N. Hirosaki, M. Mitomo, Y. Yamamoto, T. Suehiro, and N. Ohashi, Journal of the American Ceramic Society, 87(7):1368-1370 (July, 2004 ). [
Abstract ]
·
NMRC (UK): "Monolithic integration of wavelength-scale diffractive structures on red vertical-cavity lasers by focused ion beam etching." J.P. Justice, P. Lambkin, M. Meister, R.
Winfield, and B. Corbett, IEEE Photonics Technology Letters, 16(8):1795-1797 (August, 2004). [
Abstract ]
·
Pohang University of Science & Technology (South Korea): "Growth and characterization of ZnO film on Si(111) substrate by helicon wave plasma-assisted evaporation."
D.Y. Lee, C.H. Choi, and S.H. Kim, Journal of Crystal Growth, 268(1-2):184-191 (July 15, 2004). [
Abstract ]
·
Pusan National University (South Korea): "Impurity band characteristics near the band edge of Al-doped ZnO." T.B. Hur, Y.H.
Hwang, and H.K. Kim, Journal of Applied Physics, 96(3):1507-1510 (August 1, 2004). [
Abstract ]
·
Russian Academy of Sciences (Russia): "Effect of the p-n junction breakdown mechanism on the Er3+ ion electroluminescence intensity and
excitation efficiency in Si : Er epitaxial layers grown through sublimation molecular beam epitaxy." V.B. Shmagin, D.Y. Remizov, Z.F. Krasil'nik,
V.P. Kuznetsov, V.N. Shabanov, L.V. Krasil'nikova, D.I. Kryzhkov, and M.N. Drozdov, Physics of the Solid State, 46(1):109-112 (2004). [
Abstract ]
·
Russian Academy of Sciences (Russia): "Electroluminescence efficiency of silicon diodes." M.S. Bresler, O.B. Gusev, B.P. Zakharchenya, and I.N. Yassievich, Physics of the Solid Stat, 46(1):5-9 (2004). [
Abstract ]
·
Russian Academy of Sciences (Russia): "Silicon LEDs emitting in the band-to-band transition region: Effect of temperature and current strength."
A.M. Emel'yanov, N.A. Sobolev, and E.I. Shek, Physics of the Solid State, 46(1):40-44 (2004). [
Abstract ]
·
Russian Academy of Sciences (Russia)/NPO Orion (Russia): "Kinetics of electroluminescence in an efficient silicon light-emitting diode with thermally stable spectral characteristics." A.M. Emel'yanov, Y.A. Nikolaev, N.A.
Sobolev, and T.M. Mel'nikova, Semiconductors, 38(5):610-614 (2004). [
Abstract ]
·
Technical University of Moldova (Moldova)/ Institute of Solid State Physics (Russia)/National Center for Microelectronics (Spain): "Photoluminescence of ZnO
layers grown on opals by chemical deposition from zinc nitrate solution." V.V. Ursaki, I.M. Tiginyanu, V.V. Zalamai, V.M. Masalov, E.N. Samarov, G.A. Emelchenko, and F. Briones, Semiconductor Science and Technology,
19(7):851-854 (July, 2004). [
Abstract ]
·
Technical University of Moldova (Moldova)/Russian Academy of Sciences (Russia)/Institute of Microelectronics Madrid (Spain): "Photoluminescence and
resonant Raman scattering from ZnO-opal structures." V.V. Ursaki, I.M. Tiginyanu, V.V. Zalamai, V.M. Masalov, E.N. Samarov, G.A. Emelchenko, and F. Briones, Journal of Applied Physics, 96(2):1001-1006 (July 15, 2004). [
Abstract ]
·
University of Florida /US Air Force: "Recent progress in processing and properties of ZnO." S.J. Pearton, D.P. Norton, K. Ip,
Y.W. Heo, and T. Steiner, Superlattices and Microstructures, 34(1-2):3-32 (July , 2004 -August 31, 2004). [
Abstract ]
·
University of Gottingen (Germany): "Stable violet cathodoluminescence of alpha-quartz after Ge+ implantation at elevated temperature." P.K. Sahoo, S. Dhar, S. Gasiorek
, and K.P. Lieb, Journal of Applied Physics, 96(3):1392-1397 (August 1, 2004). [
Abstract ]
·
University of Rochester: "Monolithic silicon light sources." P.M. Fauchet, Silicon Photonics, 94:177-198
(2004). [URL not available]
·
University of Tokyo(Japan)/STARC (Japan): "Synchrotron-radiation deep level transient spectroscopy for defect characterization of semiconductors."
H. Fujioka, T. Sekiya, Y. Kuzuoka, M. Oshima, H. Usuda, N. Hirashita, and M. Niwa, Applied Physics Letters, 85(3):413-415 (July 19, 2004). [
Abstract ]
·
University of Ulm (Germany): "Influences of biaxial strains on the vibrational and exciton energies in ZnO." T. Gruber,
G.M. Prinz, C. Kirchner, R. Kling, F. Reuss, W. Limmer, and A. Waag, Journal of Applied Physics, 96(1):289-293 (July 1, 2004). [
Abstract ]
E. Review Articles
·
Kansas State University: "Carrier dynamics in III-nitrides studied by time-resolved photoluminescence." H.X. Jiang and J.Y. Lin, Ultrafast Dynamical Processes in Semiconductors,
92:259-307 (2004). [
Abstract ]
·
National Research Council (Canada)/University of Trent (Italy): "Silicon fundamentals for photonics applications." D.J. Lockwood and L. Pavesi, Silicon
Photonics, 94:1-50 (2004). [URL not available]
·
Sandia National Laboratories/Tomsk Polytechnic University (Russia)/Nagaoka University of Technology (Japan): "Materials modification
using intense ion beams." T.J. Renk, P.P. Provencio, S.V. Prasad, A.S. Shlapakovski, A.V. Petrov, K. Yatsui, W.H. Jiang, and H. Suematsu, Proceedings of the IEEE, 92(7):1057-1081 (July, 2004 ). [
Abstract ]
·
University of California-Berkeley: "Band gaps of InN and group III nitride alloys ." J. Wu and W. Walukiewicz,
Superlattices and Microstructures, 34(1-2):63-75 (July, 2004 -August 31, 2004). [
Abstract ]
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The information presented in this section has been developed by
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Point of Contact: Jeff Tsao |
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