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ISSUE 23: SCIENTIFIC LITERATURE (Early May-Early July 2004) |
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From the Technical Literature The material in this section is selected from scientific and technical papers that became available during the reporting time period. Links to online abstracts are provided. Most online abstracts are freely accessible to the public. A few require journal subscriptions or memberships, and are noted as such. The technical literature section is roughly organized by subject area and, within subjects, alphabetically by institution of the lead author. Use the links below to go directly to a section. A. Materials and Device Fabrication B. Materials and Device Design Properties A. Materials and Device Fabrication
·
Agh University of Technology (Poland): "Low Dislocation Density, High Power InGaN Laser Diodes." P. Perlin, M. Leszczyski, P. Prystawko, P. Wisniewski, R. Czernetzki, C. Skierbiszewski, G. Nowak, W. Purgal et al , MRS Internet Journal of Nitride Semiconductor Research, 9(3):3 (2004). [
Abstract ]
·
Arizona State University: "Synthesis of Uniform GaN Quantum Dot Arrays Via Electron Nanolithography of D2GaN3." P. Crozier, J. Tolle, J. Kouvetakis, and C. Ritter, Applied Physics Letters, 84(18):3441-3443 (May 3, 2004). [
Abstract ]
· Arizona State University / Motorola Inc. / Panalyt Inc.: "Epitaxial Growth of AlxGa1-Xn on Si(111) Via a ZrB2(0001) Buffer Layer." J. Tolle, J. Kouvetakis, D. Kim, S. Mahajan, A. Bell, F. Ponce, I. Tsong, M. Kottke et al , Applied Physics Letters, 84(18):3510-3512 (May 3, 2004). [
Abstract ]
·
CEA Grenoble (France) / Novasic Savoie Technolac (France): "Growth Kinetics of N-Face Polarity GaN by Plasma-Assisted Molecular-Beam Epitaxy." E. Monroy, E. Sarigiannidou, F. Fossard, N. Gogneau, E. Bellet-Amalric, J. Rouviere, S. Monnoye, H. Mank et al , Applied Physics Letters, 84(18):3684-3686 (May 3, 2004). [
Abstract ]
·
CEA Grenole (France) / Novasic Savoie Technolac (France): "Effects of Stacking on the Structural and Optical Properties of Self-Organized GaN/AlN Quantum Dots." N. Gogneau, F. Fossard, E. Monroy, S. Monnoye, H. Mank, and B. Daudin, Applied Physics Letters, 84(21):4224-4226 (May 24, 2004). [
Abstract ]
·
Chalmers University of Technology (Sweden): "The Influence of Composition and Unintentional Doping on the Two-Dimensional Electron Gas Density in AlGaN/GaN Heterostructures." S. Davidsson, M. Gurusinghe, T. Andersson, and H. Zirath , Journal of Electronic Materials, 33(5):440-444 (May, 2004). [
Abstract ]
·
Chinese Academy of Sciences: "Growth of a-Plane GaN Films on R-Plane Sapphire Substrates by Metalorganic Chemical Vapour Deposition." D. Li, H. Chen, H. Yu, X. Zheng, Q. Huang, and J. Zhou, Chinese Physics Letters, 21(5):970-971 (May, 2004). [
Abstract ]
·
Chinese Academy of Sciences (China) / Wuhan University (China): "Effect of Trimethylgallium Flow on the Structural and Optical Properties of InGaN/GaN Multiple Quantum Wells." J. Zhang, J. Wang, Y. Wang, M. Wu, J. Liu, J. Zhu, and H. Yang, Journal of Applied Crystallography, 37(3):391-394 (June, 2004). [
Abstract ]
·
CNR (Italy) / University of Bari (Italy) / Georgia Institute of Technology / Duke University: "Interplay Between GaN Polarity and Surface Reactivity Towards Atomic Hydrogen." M. Losurdo, M. Giangregorio, P. Capezzuto, G. Bruno, G. Namkoong, W. Doolittle, and A. Brown, Journal of Applied Physics, 95(12):8408-8418 (June 15, 2004). [
Abstract ]
·
Dongguk University (South
Korea) / Chungbuk National University (South Korea) / Kyung Hee University
(South Korea): "High-Brightness Light Emitting Diodes Using Dislocation-Free
Indium Gallium Nitride/Gallium Nitride Multiquantum-Well Nanorod Arrays."
H. Kim, Y. Cho, H. Lee, S. Kim, S. Ryu, D. Kim, T. Kang, and K. Chung,
Nano Letters, 4(6):1059-1062 (June, 2004). [
Abstract ]
·
Dongguk University (South
Korea) / Hanyang University (South Korea): "Effect of Annealing
on Neutron-Transmutation-Doped GaN Epilayers Grown on Sapphire Substrates."
S. Park, T. Kang, and T. Kim, Journal of Materials Science,
39(9):3217-3219 (May 1, 2004). [
Abstract ]
·
GE Co. Global Research Center
/ AXT Optoelectronics: "Blue and Near-Ultraviolet Light-Emitting
Diodes on Free-Standing GaN Substrates." X. Cao, S. LeBoeuf, M. D'Evelyn,
S. Arthur, J. Kretchmer, C. Yan, and Z. Yang, Applied Physics Letters,
84(21):4313-4315 (May 24, 2004). [
Abstract ]
·
Harvard University: "Rational
Growth of Branched and Hyperbranched Nanowire Structures." D. Wang,
F. Qian, C. Yang, Z. Zhong, and C. Lieber, Nano Letters, 4(5):871-874
(May, 2004). [
Abstract ]
·
Inje University of Gimhae
(South Korea) / University of Florida: "Planar Inductively Coupled
BCl3 Plasma Etching of III-V Semiconductors." W. Lim, I. Baek, J.
Lee, M. Jeon, W. Park, G. Cho, and S. Pearton, Journal of the Electrochemical
Society, 151(5):G343-G346 (2004). [
Abstract ]
·
Institute for Crystal Growth (Germany) / CNR (Italy): "A Study of Indium Incorporation Efficiency in InGaN Grown by MOVPE." M. Bosi and R. Fornari, Journal of Crystal Growth, 265(3-4):434-439 (May 1, 2004). [
Abstract ]
·
Johannes Kepler University
(Austria) / Upper Austrian Rsearch GmbH (Austria) / University Gesamthsch
Paderborn (Germany): "In-Situ Growth Monitoring by Spectroscopy
Ellipsometry of MOCVD Cubic-GaN(001)." A. Ramil, K. Schmidegg, A.
Bonanni, H. Sitter, D. Stifter, S. Li, D. As, and K. Lischka, Thin
Solid Films, 455-56:684-687 (May 1, 2004). [
Abstract ]
·
JST (Japan) / Chiba University (Japan): "In-Situ Spectroscopic Ellipsometry Investigation and Control of GaN Growth Mode in Metal-Organic Vapor Phase Epitaxy at Low Pressures of 20 Torr." B. Cao, K. Xu, Y. Ishitani, and A. Yoshikawa, Thin Solid Films, 455-56:661-664 (May 1, 2004). [
Abstract ]
·
LBNL: "Formation of Aluminum Nitride Thin Films as Gate Dielectrics on Si (100)."
Y. Lee, Journal of Crystal Growth, 266(4):568-572 (June 1, 2004). [
Abstract ]
·
Leibniz Institut fur Oberflachenmodifizierung (Germany) : "Ion-Beam-Assisted Molecular-Beam Epitaxy: a Method to Deposit Gallium Nitride Films With High Crystalline Quality." S. Sienz, J. Gerlach, T. Hoche, A. Sidorenko, and B. Rauschenbach, Thin Solid Films, 458(1-2): 63-66 (June 30, 2004). [
Abstract ]
·
Linkoping University (Sweden) / North Carolina State University / Lumilog (France): "HVPE-GaN: Comparison of Emission Properties and Microstructure of Films Grown on Different Laterally Overgrown Templates ." T. Paskova, E. Valcheva, P. Paskov, B. Monemar, A. Roskowski, R. Davis, B. Beaumont, and P. Gibart, Diamond and Related Materials, 13(4-8):1125-1129 (April, 2004-August 31, 2004). [
Abstract ]
·
Linkoping University (Sweden)
/ University of Bremen (Germany): "Hydride Vapor-Phase Epitaxial
GaN Thick Films for Quasi-Substrate Applications: Strain Distribution and
Wafer Bending." T. Paskova, V. Darakchieva, E. Valcheva, P. Paskov,
I. Ivanov, B. Monemar, T. Bottcher, C. Roder et al, Journal of Electronic
Materials, 33(5):389-394 (May, 2004). [
Abstract ]
·
Lumileds Lighting / Sandia
National Labs / Agilent Technology: "InGaN/GaN Quantum-Well Heterostructure
Light-Emitting Diodes Employing Photonic Crystal Structures." J.
Wierer, M. Krames, J. Epler, N. Gardner, M. Craford, J. Wendt, J. Simmons,
and M. Sigalas, Applied Physics Letters, 84(19): 3885-3887 (May
10, 2004). [
Abstract ]
·
Macquarie University (Australia)
/ La Trobe University (Australia) / Australian Defense Force Academy (Australia)
/ Australian Nuclear Science and Technology Organization (Australia) / Australian
National University (Australia): "Gallium and Oxygen Accumulations
on Gallium Nitride Surfaces Following Argon Ion Milling in Ultra-High Vacuum
Conditions." K. Butcher, Afifuddin, T. Tansley, N. Brack, P. Pigram,
H. Timmers, K. Prince, and R. Elliman, Applied Surface Science,
230(1-4): 18-23 (May 31, 2004). [
Abstract ]
·
Max Planck Institute for Coal
Research (Germany): "Porosity Control in Pre-Ceramic Molecular
Precursor-Derived GaN Based Materials." G. Chaplais and S. Kaskel,
Journal of Materials Chemistry, 14(6):1017-1025 (2004). [
Abstract ]
·
Nagoya Institute of Technology
(Japan): "Formation Chemistry of High-Density Nanocraters on
the Surface of Sapphire Substrates With an in Situ Etching and Growth Mechanism
of Device-Quality GaN Films on the Etched Substrates." M. Hao, H.
Ishikawa, and T. Egawa, Applied Physics Letters, 84(20): 4041-4043
(May 17, 2004). [
Abstract ]
·
Nagoya Institute of Technology
(Japan): "Influence of Growth Temperature on Quaternary AiinGaN
Epilayers for Ultraviolet Emission Grown by Metalorganic Chemical Vapor Deposition."
Y. Liu, T. Egawa, H. Ishikawa, B. Zhang, and M. Hao, Japanese Journal
of Applied Physics Part 1-Regular Papers Short Notes & Review Papers,
43(5a):2414-2418 (May, 2004). [
Abstract ]
·
National Cheng Kung University
(Taiwan) / Epitech Technology Corp. (Taiwan): "Improved Light-Output
Power of GaN LEDs by Selective Region Activation." C. Liu, Y. Chen,
M. Houng, Y. Wang, Y. Su, W. Chen, and S. Chen, IEEE Photonics Technology
Letters, 16(6): 1444-1446 (June, 2004). [
Abstract ]
·
National Cheng Kung University
(Taiwan) / Waseda University (Japan): "High Quality GaN Epitaxial
Layers Grown by Modulated Beam Growth Method." K. Liu, T. Tezuka,
S. Sugita, Y. Watari, Y. Horikoshi, Y. Su, and S. Chang, Materials
Chemistry and Physics, 86(1):161-164 (July 15, 2004). [
Abstract ]
·
National Taiwan University
(Taiwan): "Effects of Hydrogen on GaN Metalorganic Vapor-Phase
Epitaxy Using Tertiarybutylhydrazine as Nitrogen Source." Y. Hsu,
L. Hong, J. Jiang, and J. Chang, Journal of Crystal Growth,
266(1-3): 347-353 (May 15, 2004). [
Abstract ]
·
National Tsing Hua University
(Taiwan) / National Central University (Taiwan) / Industrial Technology Research
Institute (Taiwan): "Heteroepitaxial Growth of Wurtzite InN Films
on Si(111) Exhibiting Strong Near-Infrared Photoluminescence at Room Temperature."
S. Gwo, C. Wu, C. Shen, W. Chang, T. Hsu, J. Wang, and J. Hsu, Applied
Physics Letters, 84(19): 3765-3767 (May 10, 2004). [
Abstract ]
·
North Carolina State University:
"Modeling of Residual Stresses for Thermally Strained GaN/Al2O3
Heterostructures." W. Ashmawi, M. Zikry, K. Wang, and R. Reeber,
Journal of Crystal Growth, 266(4): 415-422 (June 1, 2004). [
Abstract ]
·
North Carolina State University
/ Arizona State University / Purdue University: "Growth of AlN
Crystals on AlN/SiC Seeds by AlN Powder Sublimation in Nitrogen Atmosphere."
V. Noveski, R. Schlesser, S. Mahajan, S. Beaudoin, and Z. Sitar, MRS
Internet Journal of Nitride Semiconductor Research, 9(2): 2 (2004). [
Abstract ]
·
NTT Corporation (Japan) /
University of Electrocommunication (Japan): "An InGaN-Based Horizontal-Cavity
Surface-Emitting Laser Diode." T. Akasaka, T. Nishida, T. Makimoto,
and N. Kobayashi, Applied Physics Letters, 84(20): 4104-4106
(May 17, 2004). [
Abstract ]
·
ORNL / University of Tennesseee
/ Ames Laboratory: "Synthesis of Ternary Nitrides From Intermetallic
Precursors: Modes of Nitridation in Model Cr3Pt Alloys to Form Cr3PtN Antiperovskite
and Application to Other Systems." M. Brady, S. Wrobel, T. Lograsso,
E. Payzant, D. Hoelzer, J. Horton, and L. Walker, Chemistry of Materials,
16(10): 1984-1990 (May 18, 2004). [
Abstract ]
·
Otto Von Guericke University
(Germany): "Influence of Buffer Layers on Metalorganic Vapor
Phase Epitaxy Grown GaN on Si(001)." F. Schulze, A. Dadgar, J. Blasing,
and A. Krost, Applied Physics Letters, 84(23): 4747-4749 (June
7, 2004). [
Abstract ]
·
Palo Alto Research Center:
"Indium Versus Hydrogen-Terminated GaN(0001) Surfaces: Surfactant
Effect of Indium in a Chemical Vapor Deposition Environment." J.
Northrup and C. Van de Walle, Applied Physics Letters, 84(21):
4322-4324 (May 24, 2004). [
Abstract ]
·
Politecnico di Milan (Italy):
"Accelerated Decomposition of Gas Phase Metal Organic Molecules
Determined by Radical Reactions." C. Cavallotti, D. Moscatelli, M.
Masi, and S. Carra, Journal of Crystal Growth, 266(1-3): 363-370
(May 15, 2004). [
Abstract ]
·
Russian Academy of Sciences - AF Ioffe Physiotechnical Institute (Russia): "Growth of AlGaN Epitaxial Layers and AlGaN/GaN Superlattices by Metal-Organic Chemical Vapor Deposition." W. Lundin, A. Sakharov, A. Tsatsul'nikov, E. Zavarin,
A. Besyul'kin, A. Fomin, and D. Sizov, Semiconductors, 38(6): 678-682 (2004). [
Abstract ]
·
Seoul National University (South Korea): "Effects of Total Gas Velocity During Growth of Undoped GaN Epitaxial Layer on Sapphire (0001) Substrate by Horizontal MOCVD." M. Kwon and S. Cho, Journal of Crystal Growth, 266(4): 435-440
(June 1, 2004). [
Abstract ]
·
Sheffield Hallam University
(UK): "Interrelationship Between Atomic Species, Bias Voltage,
Texture and Microstructure of Nano-Scale Multilayers." D. Lewis,
Q. Luo, P. Hovsepian, and W. Munz, Surface & Coatings Technology,
184(2-3): 225-232 (June 22, 2004). [
Abstract ]
·
State University at Ghent
(Belgium): "Target Poisoning During Reactive Magnetron Sputtering:
Part I: the Influence of Ion Implantation." D. Depla and R. De Gryse,
Surface & Coatings Technology, 183(2-3): 184-189 (May 24, 2004).
[
Abstract ]
·
STR Inc. / Emcore Corp.:
"Parametric Studies of III-Nitride MOVPE in Commercial Vertical
High-Speed Rotating Disk Reactors." A. Lobanova, K. Mazaev, E. Yakovlev,
R. Talalaev, A. Galyukov, Y. Makarov, D. Gotthold, B. Albert et al, Journal
of Crystal Growth, 266(1-3):354-362 (May 15, 2004). [
Abstract ]
·
SUNY Stony Brook / Florida
International University: "Modeling and Simulation of AlN Bulk
Sublimation Growth Systems." B. Wu, R. Ma, H. Zhang, and V. Prasad,
Journal of Crystal Growth, 266(1-3): 303-312 (May 15, 2004). [
Abstract ]
·
Texas Technical University:
"Evolution of Surface Roughness of AlN and GaN Induced by Inductively
Coupled Cl-2/Ar Plasma Etching." K. Zhu, V. Kuryatkov, B. Borisov,
J. Yun, G. Kipshidze, S. Nikishin, H. Temkin, D. Aurongzeb et al ,
Journal of Applied Physics, 95(9):4635-4641 (May 1, 2004). [
Abstract ]
·
Tohoku University (Japan)
/ Ricoh Co. Ltd (Japan): "Single Crystal Growth of GaN by the
Temperature Gradient Na Flux Method." M. Aoki, H. Yamane, M. Shimada,
S. Sarayama, H. Iwata, and F. DiSalvo, Journal of Crystal Growth,
266(4): 461-466 (June 1, 2004). [
Abstract ]
·
Toyohashi University (Japan):
"Growth of High-Quality AlN With Low Pit Density on SiC Substrates."
A. Nakajima, Y. Furukawa, S. Koga, and H. Yonezu , Journal of Crystal
Growth, 265(3-4):351-356 (May 1, 2004). [
Abstract ]
·
University of California -
Santa Barbara: "Carbon Doping of GaN With CBr4 in Radio-Frequency
Plasma-Assisted Molecular Beam Epitaxy." D. Green, U. Mishra, and
J. Speck, Journal of Applied Physics, 95(12): 8456-8462 (June
15, 2004). [
Abstract ]
·
University of California -
Santa Barbara: "Maskless Lateral Epitaxial Overgrowth of High-Aluminum-Content
AlxGa1-Xn." T. Katona, P. Cantu, S. Keller, Y. Wu, J. Speck, and
S. DenBaars, Applied Physics Letters, 84(24): 5025-5027 (June
14, 2004). [
Abstract ]
·
University of California -
Santa Barbara: "Roughening Hexagonal Surface Morphology on Laser
Lift-Off (LLO) N-Face GaN With Simple Photo-Enhanced Chemical Wet Etching."
Y. Gao, T. Fujii, R. Sharma, K. Fujito, S. Denbaars, S. Nakamura, and E. Hu,
Japanese Journal of Applied Physics Part 2-Letters & Express Letters,
43(5a):L637-L639 (May 1, 2004). [
Abstract ]
·
University of Hong Kong (China)
/ City University of Hong Kong (China): "A Model for GaN 'ghost'
Islands." M. Xie, L. Zheng, X. Dai, H. Wu, and S. Tong, Surface
Science, 558(1-3):195-200 (June 1, 2004). [
Abstract ]
·
University of Science and
Technology (China): "Single-Crystalline Gallium Nitride Microspindles:
Synthesis, Characterization, and Thermal Stability." F. Xu, Y. Xie,
X. Zhang, S. Zhang, X. Liu, W. Xi, and X. Tian, Advanced Functional
Materials, 14(5):464-470 (May, 2004). [
Abstract ]
·
University of Shizuoka (Japan)
/ Shiquoka Industrial Research Institute (Japan): "Growth of
the AlN Nano-Pillar Crystal Films by Means of a Halide Chemical Vapor Deposition
Under Atmospheric Pressure." M. Yoshioka, N. Takahashi, and T. Nakamura,
Materials Chemistry and Physics, 86(1):74-77 (July 15, 2004). [
Abstract ]
·
University of South Carolina:
"Visible Light-Emitting Diodes Using a-Plane GaN-InGaN Multiple
Quantum Wells Over R-Plane Sapphire." A. Chitnis, C. Chen, V. Adivarahan,
M. Shatalov, E. Kuokstis , V. Mandavilli, J. Yang, and M. Khan, Applied
Physics Letters, 84(18):3663-3665 (May 3, 2004). [
Abstract ]
·
University of Tokyo (Japan)
/ Kanagawa Academy of Science and Technology (Japan): "Epitaxial
Growth of InN on C-Plane Sapphire by Pulsed Laser Deposition With Rf Nitrogen
Radical Source." J. Ohta, H. Fujioka, I. Honke, and M. Oshima,
Thin Solid Films, 457(1):109-113 (June 1, 2004). [
Abstract ]
·
University of Tokyo (Japan)
/ Kanagawa Academy of Science and Technology (Japan) / Nippon Steel Corp.
Ltd. (Japan): "Structural Characterization of Group III Nitrides
Grown by Pulsed Laser Deposition." H. Takahashi, H. Fujioka, J. Ohta,
M. Oshima, and M. Kimura, Thin Solid Films, 457(1):114-117 (June
1, 2004). [
Abstract ]
·
University of Tokyo (Japan) / Kanagawa Academy of Science and Technology (Japan) / Showa Denko Co. Ltd. (Japan): "Effect of Ambient Gas on Pulsed Laser Deposition of Group III Nitrides." S. Ito, H. Fujioka, J. Ohta, A. Kobayashi, T. Honke, H. Miki, and M. Oshima, Thin Solid Films, 457(1):118-121 (June 1, 2004). [
Abstract ]
B. Materials and Device Design Properties
·
Arizona State University /
Cornell University: "Observation of Nonequilibrium Longitudinal
Optical Phonons in InN and Its Implications." W. Liang, K. Tsen,
D. Ferry, H. Lu, and W. Schaff, Applied Physics Letters, 84(19):3849-3851
(May 10, 2004). [
Abstract ]
·
Catholic University of Goias
(Brazil) / University of Sao Paulo (Brazil) / Federal University of Ceara
(Brazil) / Unicamp (Brazil): "Hole Mobility in Zincblende C-GaN."
C. Rodrigues, J. Fernandez, J. Leite, V. Chitta, V. Freire, A. Vasconcellos,
and R. Luzzi, Journal of Applied Physics, 95(9):4914-4917 (
May 1, 2004). [
Abstract ]
·
Chinese Academy of Sciences
(China): "Structural and Optical Properties of 3D Growth Multilayer
InGaN/GaN Quantum Dots by Metalorganic Chemical Vapor Deposition."
X. Han, Z. Chen, D. Li, J. Wu, J. Li, X. Sun, X. Liu, P. Han et al ,
Journal of Crystal Growth, 266(4):423-428 (June 1, 2004). [
Abstract ]
·
Chonbuk National University
(South Korea) / Dong A University (South Korea): "Mg Fluctuation
in P-GaN Layers and Its Effects on InGaN/GaN Blue Light-Emitting Diodes Dependent
on P-GaN Growth Temperature ." S. Kim, H. Cho, M. Yoo, H. Cheong,
C. Hong, and H. Cho, Journal of Electronic Materials, 33(5):445-449
(May, 2004). [
Abstract ]
·
Complutense University of
Madrid (Spain) / Technical University of Munich (Germany): "Study
of Pinholes and Nanotubes in AlInGaN Films by Cathodoluminescence and Atomic
Force Microscopy." M. Herrera, A. Cremades, J. Piqueras, M. Stutzmann,
and O. Ambacher, Journal of Applied Physics, 95(10):5305-5310
(May 15, 2004). [
Abstract ]
·
Federal University of Ceara
(Brazil): "Concentration Effects on the Raman Scattering of AlGaN/GaN
Superlattices." E. Barros, V. Freire, J. Mendes, and V. Lemos,
Surface Science, 557(1-3):73-79 (May 20, 2004). [
Abstract ]
·
Hanyang University (South
Korea) / Dongguk University (South Korea): "Blue-Light Emission
From Molecular-Beam-Epitaxially Grown GaN/Al0.5Ga0.5N Multiple Quantum Wells
With a Perturbating Layer of Al0.5Ga0.5N Monolayers." Y. Park, S.
Lee, J. Oh, C. Park, and T. Kang, Applied Physics Letters, 84(22):4478-4480
(May 31, 2004). [
Abstract ]
·
Helisinki University of Technology
(Finland) / West Virginia University: "Vacancy Defects in O-Doped
GaN Grown by Molecular-Beam Epitaxy: the Role of Growth Polarity and Stoichiometry."
M. Rummukainen, J. Oila, A. Laakso, K. Saarinen, A. Ptak, and T. Myers,
Applied Physics Letters, 84(24):4887-4889 (June 14, 2004). [
Abstract ]
·
Institute for Rare Metals
(Russia) / University of Florida: "Influence of High-Temperature
Annealing on the Properties of Fe Doped Semi-Insulating GaN Structures."
A. Polyakov, N. Smirnov, A. Govorkov, A. Shlensky, and S. Pearton,
Journal of Applied Physics, 95(10):5591-5596 (May 15, 2004). [
Abstract ]
·
Institute for Rare Metals
(Russia) / University of Florida / US Army Research Office: "Optical
and Electrical Properties of AlGaN Films Implanted With Mn, Co, or Cr."
A. Polyakov, N. Smirnov, A. Govorkov, R. Frazier, G. Thaler, C. Abernathy,
S. Pearton, J. Zavada et al , Journal of Electronic Materials,
33(5):384-388 (May, 2004). [
Abstract ]
·
Institute for Semiconductor
Physics (Lithuania) / University of Lecce (Italy): "Monte Carlo
Study of Hot-Carrier Transport in Bulk Wurtzite GaN and Modeling of a Near-Terahertz
Impact Avalanche Transit Time Diode." A. Reklaitis and L. Reggiani,
Journal of Applied Physics, 95(12):7925-7935 (June 15, 2004). [
Abstract ]
·
Intel Corp. / University of
Florida: "Room-Temperature Photoluminescence and Electroluminescence
Properties of Sputter-Grown Gallium Nitride Doped With Europium."
J. Kim and P. Holloway, Journal of Applied Physics, 95(9):4787-4790
(May 1, 2004). [
Abstract ]
·
Jawaharlal Nehru University
(India): "Slow relaxation of nonequilibrated photo-carriers in
semiconductors." S. Ghosh, Phase Transitions, 77(8-10):791-821
(August, 2004-October 31, 2004). [
Abstract ]
·
Kanazawa University (Japan)
/ Sharp Co. Ltd. (Japan) / University of Durham (UK): "A Theoretical
and Experimental Investigation of the Dynamics of Tandem Blue-Violet Lasers."
V. Tronciu, M. Yamada, T. Kawakami, S. Ito, T. Ohno, M. Taneya, and R. Abram,
Optics Communications, 235(4-6):409-414 (May 15, 2004). [
Abstract ]
·
Kohgakuin University (Japan):
"Room-Temperature Deep-Ultraviolet Lasing at 241.5 nm of AlGaN
Multiple-Quantum-Well Laser." T. Takano, Y. Narita, A. Horiuchi,
and H. Kawanishi, Applied Physics Letters, 84(18):3567-3569
(May 3, 2004). [
Abstract ]
·
LANL / Sandia National Laboratories:
"Energy-Transfer Pumping of Semiconductor Nanocrystals Using an
Epitaxial Quantum Well." M. Achermann, M. Petruska , S. Kos, D. Smith,
D. Koleske, and V. Klimov, Nature, 429(6992):642-646 (June 10,
2004). [
Abstract ]
·
Lehigh University / US Army
Research Office / SVT Associates Inc.: "Site-Selective Spectroscopy
of Er in GaN." V. Dierolf, C. Sandmann, J. Zavada, P. Chow, and B.
Hertog, Journal of Applied Physics, 95(10):5464-5470 (May 15,
2004). [
Abstract ]
·
Linkoping University (Sweden)
/ University of Florida / National Central University (Taiwan) / US Army Research
Office: "Optical and Electrical Characterization of (Ga,Mn)N/InGaN
Multiquantum Well Light-Emitting Diodes." I. Buyanova, M. Izadifard,
L. Storasta, W. Chen, J. Kim, F. Ren, G. Thaler, C. Abernathy et al ,
Journal of Electronic Materials, 33(5):467-471 (May, 2004). [
Abstract ]
·
LLNL / University of New South
Wales (Australia) / University of Queensland (Australia) / Australian National
University (Australia) / Ledex Corp. (Taiwan): "Lattice Damage
Produced in GaN by Swift Heavy Ions." S. Kucheyev, H. Timmers, J.
Zou, J. Williams, C. Jagadish, and G. Li, Journal of Applied Physics,
95(10):5360-5365 (May 15, 2004). [
Abstract ]
·
MIT: "Yellow-green
strained-InGaP quantum-well epitaxial-transparent-substrate light emitting
diodes." L. Mcgill, J.W. Wu, and E.A. Fitzgerald, Journal
of Applied Physics, 95(12):7561-7566 (June 15, 2004). [
Abstract ]
·
Nagoya University (Japan):
"Optical and Electrical Properties of (1-101)GaN Grown on a 7
Degrees Off-Axis (001)Si Substrate." T. Hikosaka, T. Narita, Y. Honda,
M. Yamaguchi, and N. Sawaki, Applied Physics Letters, 84(23):4717-4719
(June 7, 2004). [
Abstract ]
·
Nanyang Technology University:
"Structural Properties and Nanoindentation of AlN Films by a Filtered
Cathodic Vacuum Arc at Low Temperature." X. Ji, S. Lau, G. Yu, W.
Zhong, and B. Tay, Journal of Physics D-Applied Physics, 37(10):1472-1477
(May 21, 2004). [
Abstract ]
·
National Cheng Kung University
(Taiwan) / South Epitaxy Corp. (Taiwan) / National Central University (Taiwan):
"Nitride-Based LEDs With 800 Degrees C Grown P-AllnGaN-GaN Double-Cap
Layers." S. Chang, L. Wu, Y. Su, Y. Hsu, W. Lai, J. Tsai, J. Sheu,
and C. Lee, IEEE Photonics Technology Letters, 16(6):1447-1449
(June, 2004). [
Abstract ]
·
National Chung Hsing University
(Taiwan): "Characterization of Large-Area AlGaInP/Mirror/Si Light-Emitting
Diodes Fabricated by Wafer Bonding." R. Horng, S. Huang, D. Wuu,
and Y. Jiang, Japanese Journal of Applied Physics Part 1-Regular
Papers Short Notes & Review Papers, 43(5a):2510-2514 (May, 2004).
[
Abstract ]
·
National University of Kaohsiung (Taiwan) / National Taiwan University (Taiwan) / Chung Hua University (Taiwan)
/ Kansas State University: "Cluster Size and Composition Variations in Yellow and Red Light-Emitting InGaN Thin Films Upon Thermal Annealing." S. Feng, T. Tang, Y. Lu, S. Liu, E. Lin, C. Yang, K. Ma, C. Shen et al ,
Journal of Applied Physics, 95(10):5388-5396 (May 15, 2004). [
Abstract ]
·
Ohio University: "RBS
Ion Channeling Study of Low Concentrations of Ion Implanted Samarium in GaN."
D. Ingram, H. Lozykowski, and W. Jadwisienczak, Nuclear Instruments
& Methods in Physics Research Section B-Beam Interactions With Materials
and Atoms, 219-20:699-702 (June, 2004). [
Abstract ]
·
Otto Von Guericke University
(Germany) / University of Stuttgart (Germany): "Suppressing of
Optical Quenching of Deep Defect-to-Band Transitions in AlGaN and GaN/AlGaN
Heterostructures." H. Witte, E. Schrenk, K. Flugge, A. Krtschil,
M. Lisker, A. Krost, J. Christen, B. Kuhn et al , Applied Physics
Letters, 84(18):3498-3500 (May 3, 2004). [
Abstract ]
·
Pohang University of Science
and Technology (South Korea) / Pusan National University (South Korea): "Near-Edge
X-Ray Absorption Fine Structure and X-Ray Photoemission Spectroscopy Study
of the InN Epilayers on Sapphire(0001) Substrate." I. Lee, J. Kim,
H. Shin, and H. Kim, Journal of Applied Physics, 95(10):5540-5544
(May 15, 2004). [
Abstract ]
·
RIKEN (Japan) / University
of Tsukuba (Japan) / Japan Science and Technology Agency (Japan) / Waseda
University (Japan) / University of California-Santa Barbara: "Improved
Quantum Efficiency in Nonpolar (11(2)Over-Bar0) AlGaN/GaN Quantum Wells Grown
on GaN Prepared by Lateral Epitaxial Overgrowth." T. Koida, S. Chichibu,
T. Sota, M. Craven, B. Haskell, J. Speck, S. DenBaars, and S. Nakamura,
Applied Physics Letters, 84(19):3768-3770 (May 10, 2004). [
Abstract ]
·
Russian Academy of Sciences
(Russia): "Deformation of AlGaN/GaN Superlattice Layers According
to X-Ray Diffraction Data." R. Kyutt, M. Shcheglov, V. Davydov, and
A. Usikov, Physics of the Solid State, 46(2):364-370 (2004).
[
Abstract ]
·
Sandia National Laboratories:
"Analysis of Optical Emission From High-Aluminum AlGaN Quantum-Well
Structures." S. Wieczorek, W. Chow, S. Lee, A. Fischer, A. Allerman,
and M. Crawford, Applied Physics Letters, 84(24):4899-4901 (June
14, 2004). [
Abstract ]
·
Sandia National Laboratories:
"Electroreflectance Studies of Stark Shifts and Polarization-Induced
Electric Fields in InGaN/GaN Single Quantum Wells." R. Kaplar, S.
Kurtz, D. Koleske, and A. Fischer, Journal of Applied Physics,
95(9):4905-4913 (May 1, 2004). [
Abstract ]
·
Shanghai Jiao Tong University
(China) / Shandong University School of Physics and Microelectronics (China):
"Preparation and Properties of GaN Films on GaAs Substrates."
Y. Yang, H. Ma, J. Ma, and Y. Zhang, Chinese Physics Letters,
21(5):955-958 (May, 2004). [
Abstract ]
·
Sincrotrone Trieste (Italy)
/ University of Bremen (Germany): "Interfacial Interactions at
Au/Si3n4/Si(111) and Ni/Si3n4/Si(111) Structures With Ultrathin Nitride Films."
L. Aballe, L. Gregoratti, A. Barinov, M. Kiskinova, T. Clausen, S. GaNgodadhyay,
and J. Falta, Applied Physics Letters, 84(24):5031-5033 (June
14, 2004). [
Abstract ]
·
Tampere University of Technology
(Finland): "Photoluminescence From GaInP Layers and GaInP/AlGaInP
Quantum Wells Grown by Molecular Beam Epitaxy With Varying Growth Temperature,
Phosphorus Gas Pressure, and Substrate Orientation." L. Toikkanen,
T. Leinonen, A. Tukiainen, S. Viitala, and M. Pessa, Journal of
Crystal Growth, 265(3-4):410-419 (May 1, 2004). [
Abstract ]
·
Technical University of Berlin
(Germany) / University Karlsruhe (Germany): "Multi-Excitonic
Complexes in Single InGaN Quantum Dots." R. Seguin, S. Rodt, A. Strittmatter,
L. Reissmann, T. Bartel, A. Hoffmann, D. Bimberg, E. Hahn et al , Applied
Physics Letters, 84(20):4023-4025 (May 17, 2004). [
Abstract ]
·
Technion Israel Institute
of Technology (Israel): "Propagation Loss in GaN-Based Ridge
Waveguides." O. Skorka , B. Meyler, and J. Salzman, Applied
Physics Letters, 84(19):3801-3803 (May 10, 2004). [
Abstract ]
·
UFRGS (Brazil) / UCS (Brazil)
/ North Carolina State University: "Nitrogen Bonding, Stability,
and Transport in AlON Films on Si." G. Soares, K. Bastos, R. Pezzi,
L. Miotti, C. Driemeier, I. Baumvol, C. Hinkle, and G. Lucovsky, Applied
Physics Letters, 84(24):4992-4994 (June 14, 2004). [
Abstract ]
·
University of Bologna (Italy):
"Thickness-Related Features Observed in GaN Epitaxial Layers."
A. Castaldini, A. Cavallini, and L. Polenta, Applied Physics Letters,
84(24):4851-4853 (June 14, 2004). [
Abstract ]
·
University of California -
San Diego / University of Texas: "Local Conductivity and Surface
Photovoltage Variations Due to Magnesium Segregation in P-Type GaN."
B. Simpkins, E. Yu, U. Chowdhury , M. Wong, T. Zhu, D. Yoo, and R. Dupuis,
Journal of Applied Physics, 95(11, Pt. 1):6225-6231 (June 1, 2004).
[
Abstract ]
·
University of California -
Santa Barbara: "Measurement of Gain, Group Index, Group Velocity
Dispersion, and Linewidth Enhancement Factor of an InGaN Multiple Quantum-Well
Laser Diode." K. Gan and J. Bowers, IEEE Photonics Technology
Letters, 16(5):1256-1258 ( May, 2004). [
Abstract ]
·
University of Dayton / US
Air Force Research Laboratory / Nitronex Corp.: "An Electrical
Characterization of a Two-Dimensional Electron Gas in GaN/AlGaN on Silicon
Substrates." S. Elhamri, R. Berney, W. Mitchel, W. Mitchell, J. Roberts,
P. Rajagopal, T. Gehrke, E. Piner et al , Journal of Applied Physics,
95(12):7982-7989 (June 15, 2004). [
Abstract ]
·
University of Jena (Germany)
/ University of Oslo (Norway) / University of Saarland (Germany) / CERN (Switzerland):
"Observation of a Be-Correlated Donor State in GaN."
F. Albrecht, U. Reislohner, G. Pasold, C. Hulsen, W. Witthuhn, J. Grillenberger,
and M. Dietrich, Applied Physics Letters, 84(19):3876-3878 (May
10, 2004). [
Abstract ]
·
University of Missouri / US
Air Force Research Laboratory / Insitute for Nuclear Science - Vinca (Yugoslavia):
"Theory of the Composition Dependence of the Band Offset and Sheet
Carrier Density in the GaN/AlxGa1-xN Heterostructure." S. Satpathy,
Z. Popovic, and W. Mitchel, Journal of Applied Physics, 95(10):5597-5601
(May 15, 2004). [
Abstract ]
·
University of North Texas
/ Institute of Physics (India) / Jozef Stefan Institute (Slovenia): "Depth
Profiles of H, C, O, Al and Si Implants in a GaN Substrate Using Trace Element
Accelerator Mass Spectrometry." L. Mitchell, G. Prasad, P. Pelicon,
E. Smith, and F. McDaniel, Nuclear Instruments & Methods in
Physics Research Section B-Beam Interactions With Materials and Atoms,
219-20:455-458 (June, 2004). [
Abstract ]
·
University of South Carolina
/ Sensor Electronics Technology Inc.: "High-Efficiency 269 nm
Emission Deep Ultraviolet Light-Emitting Diodes." V. Adivarahan,
S. Wu, J. Zhang, A. Chitnis, M. Shatalov, V. Mandavilli, R. Gaska, and M.
Khan, Applied Physics Letters, 84(23):4762-4764 (June 7, 2004).
[
Abstract ]
·
University of Technology -
Sydney (Australia) / Macquarie University (Australia) / Technical University
of Berlin (Germany) / Technical University of Munich (Germany): "Doping-Level-Dependent
Optical Properties of GaN : Mn." O. Gelhausen, E. Malguth, M. Phillips,
E. Goldys, M. Strassburg, A. Hoffmann, T. Graf, M. Gjukic et al , Applied
Physics Letters, 84(22):4514-4516 (May 31, 2004). [
Abstract ]
·
University of Turin (Italy):
"Theory of Ion Beam Induced Charge Measurement in Semiconductor
Devices Based on the Gunn's Theorem." E. Vittone, Nuclear
Instruments & Methods in Physics Research Section B-Beam Interactions
With Materials and Atoms, 219-20:1043-1050 (June, 2004). [
Abstract ]
·
US Air Force Research Laboratory
/ Technology and Devices International Inc.: "341 nm Emission
From Hydride Vapor-Phase Epitaxy Ultraviolet Light-Emitting Diodes."
G. Smith, T. Dang, T. Nelson, J. Brown, D. Tsvetkov, A. Usikov, and V. Dmitriev,
Journal of Applied Physics, 95(12):8247-8251 (June 15, 2004). [
Abstract ]
·
US Naval Research Lab / Palo
Alto Research Center / Crystal IS / UFPR (Brazil) / Rensselaer Polytechnic
Institute: "Near-Bandedge Cathodoluminescence of an AlN Homoepitaxial
Film." E. Silveira, J. Freitas, M. Kneissl, D. Treat, N. Johnson,
G. Slack, and L. Schowalter, Applied Physics Letters, 84(18):3501-3503
(May 3, 2004). [
Abstract ]
·
Virginia Commonwealth University
/ Ataturk University (Turkey): "Investigation of Forward and
Reverse Current Conduction in GaN Films by Conductive Atomic Force Microscopy."
J. Spradlin, S. DoGaN, J. Xie, R. Molnar, A. Baski, and H. Morkoc,
Applied Physics Letters, 84(21):4150-4152 (May 24, 2004). [
Abstract ]
·
West Virginia University /
Wright State University / US Air Force Research Laboratory: "Characterization
of Multiple Carriers in GaN Using Variable Magnetic-Field Hall Measurements."
C. Swartz, R. Tompkins, T. Myers, D. Look, and J. Sizelove, Journal
of Electronic Materials, 33(5):412-417 (May, 2004). [
Abstract ]
C. Packaging and Reliability
·
Chinese Academy of Sciences
(China): "Upconversion Luminescence in Er3+ Doped and Yb3+/Er3+
Codoped Yttria Nanocrystalline Powders." J. Zhang, S. Wang, T. Rong,
and L. Chen, Journal of the American Ceramic Society, 87(6):1072-1075
(June, 2004). [
Abstract ]
·
Chinese Academy of Sciences
(China): "The Upconversion Luminescence Research of Er3+-Doped
Heavy Metal Oxyfluorosilicate Glasses." S. Xu, G. Wang, J. Zhang,
S. Dai, L. Hu, and Z. Jiang, Acta Physica Sinica, 53(6): 1840-1844
(June, 2004). [No URL available]
·
GIST (South Korea): "Low-Resistance
and Transparent Ohmic Contacts to P-Type GaN Using Zn-Ni Solid Solution/Au
Scheme." J. Song, D. Leem, and T. Seong, Applied Physics
Letters, 84(23):4663-4665 (June 7, 2004). [
Abstract ]
·
Gwangju Institute of Science
and Technology (South Korea) / Samsung Advanced Institute of Technology (South
Korea): "Low Resistance and Reflective Mg-Doped Indium Oxide-Ag
Ohmic Contacts for Flip-Chip Light-Emitting Diodes." J. Song, D.
Leem, J. Kwak, O. Nam, Y. Park, and T. Seong, IEEE Photonics Technology
Letters, 16(6):1450-1452 (June, 2004). [
Abstract ]
·
Korea Institute of Science
and Technology (South Korea) / Korea University (South Korea) / Iljin Nanotech
Co Ltd. (South Korea) / Kyung Hee University (South Korea): "The
Vacuum Packaging of a Flat Lamp Using Thermally Grown Carbon Nano Tubes."
D. Lee, S. Moon, Y. Lee, J. Yoo, J. Park, J. Jang, and B. Ju, Vacuum,
74(1):105-111 (May 3, 2004). [
Abstract ]
·
Rensselaer Polytechnic Institute: "GaInN Light-Emitting Diodes With RuO2/SiO2/Ag Omni-Directional Reflector." J. Kim, T. Gessmann, H. Luo, and E. Schubert, Applied Physics Letters, 84(22):4508-4510 (May 31, 2004). [
Abstract ]
·
University of Florida: "Single
Wall Carbon Nanotubes for P-Type Ohmic Contacts to GaN Light-Emitting Diodes."
K. Lee, Z. Wu, Z. Chen, F. Ren, S. Pearton, and A. Rinzler, Nano
Letters, 4(5):911-914 (May, 2004). [
Abstract ]
·
Yonsei University (South Korea) / KRICT (South Korea): "White Light Emitting Diodes of GaN-Based Sr2sio4: Eu and the Luminescent Properties." J. Park, C. Kim, K. Choi, H. Park, and S. Choi , Designing, Processing and Properties of Advanced Engineering Materials, Pts 1 and 2, 449-4:953-956 (2004). [
Abstract]
D. Other LED Lighting
·
Alagappa University (India): "Highly Textured ZnO Thin Films: a Novel Economical Preparation
and Approachment for Optical Devices, UV Lasers and Green LEDs."
K. Ramamoorthy, M. Arivanandhan, K. Sankaranarayanan, and C. Sanjeeviraja
, Materials Chemistry and Physics, 85(2-3):257-262 (June 15, 2004).
[
Abstract ]
·
Chinese Academy of Sciences
(China): "Synthesis and Optical Properties of ZnO Nanocluster
Porous Films Deposited by Modified Silar Method." X. Gao, X. Li,
and W. Yu, Applied Surface Science, 229(1-4):275-281 (May 15,
2004). [
Abstract ]
·
Chonbuk National University (South Korea) / University of North Texas: "Growth Mechanism of Needle-Shaped ZnO Nanostructures Over Nio-Coated Si Substrates." T. Kim, S. Lee, Y. Mo, K. Nahm, J. Kim, E. Suh, and M. Kim, Korean Journal of Chemical Engineering, 21(3): 733-738 (May, 2004). [No URL available]
·
Cornell University: "Cascaded
Light-Emitting Devices Based on a Ruthenium Complex." D. Bernards,
J. Slinker, G. Malliaras, S. Flores-Torres, and H. Abruna, Applied
Physics Letters, 84(24): 4980-4982 (June 14, 2004). [
Abstract ]
·
Hebrew University of Jerusalem (Israel): "Electrochemical Assembly of a CdS Semiconductor Nanoparticle Monolayer on Surfaces: Structural Properties and Photoelectrochemical Applications." E. Granot, F. Patolsky, and I. Willner, Journal of Physical Chemistry B, 108(19):5875-5881 (May 13, 2004). [
Abstract ]
·
Institute of Physics and Chemistry Research (Japan): "Temperature-Dependent Photoluminescence of ZnO Layers Grown on 6h-SiC Substrates." A. Ashrafi, N. Binh, B. Zhang, and Y. Segawa, Journal of Applied Physics, 95(12):7738-7741 (June 15, 2004). [
Abstract ]
·
International University Bremen (Germany) / Infineon Technology (Germany): "Prospects for New Wafer Types and Materials in Semiconductor Technology and Factors for Their Successful Introduction." W. Bergholz, J. Wittmann, R. Winkler, H. Tews, and R. Fehlhaber, Gettering and Defect Engineering in Semiconductor Technology, 95-96:665-674 (2004). [
Abstract ]
·
Kyungpook National University (South Korea): "Evaluation Scheme for the Design of Power-Optimized Single Mode Vertical-Cavity Surface-Emitting Lasers." Y. Ju, Optics Express, 12(11): 2542-2547 (May 31, 2004). [
Abstract ]
·
National Institute of Advanced Industrial Science and Technology (Japan) / Rohm Co. (Japan): "Degenerate Layers in Epitaxial ZnO Films Grown on Sapphire Substrates." H. Tampo, A. Yamada, P. Fons, H. Shibata, K. Matsubara, K. Iwata, S. Niki, K. Nakahara et al , Applied Physics Letters, 84(22):4412-4414 (May 31, 2004). [
Abstract ]
·
Peking University (China): "Synthesis of Single Crystalline GaN Nanoribbons on Sapphire(0001) Substrates." L. Yang, X. Zhang, R. Huang, G. Zhang, and X. An, Solid State Communications, 130(11):769-772 (June, 2004). [
Abstract ]
·
Rensselaer Polytechnic Institute / SUNY College at Geneseo / Cornell University: "Terahertz Emission by InN." R. Ascazubi, I. Wilke, K. Denniston, H. Lu , and W. Schaff, Applied Physics Letters, 84(23):4810-4812 (June 7, 2004). [
Abstract ]
·
Southern Taiwan University of Technology(Taiwan): "High-Quality ZnSSeTe Epitaxial Layers Grown by MBE." W. Chen, Journal of Crystal Growth, 265(3-4): 525-529 (May 1, 2004). [
Abstract ]
·
Southern Taiwan University (Taiwan): "ZnSe-Based Mixed-Color Leds." W. Chen and C. Huang, IEEE Photonics Technology Letters, 16(5): 1259-1261 (May, 2004). [
Abstract ]
·
Stanley Electrical Co. Ltd. (Japan) / Tohoku University (Japan): "High-Quality ZnO Epilayers Grown on Zn-Face ZnO Substrates by Plasma-Assisted Molecular Beam Epitaxy." H. Kato, M. Sano, K. Miyamoto, and T. Yao, Journal of Crystal Growth, 265(3-4):375-381 (May 1, 2004). [
Abstract ]
·
Stanley Electroic Co. Ltd. (Japan) / Tohuku University (Japan): "Polarity Control of ZnO on Sapphire by Varying the MgO Buffer Layer Thickness." H. Kato, K. Miyamoto, M. Sano, and T. Yao, Applied Physics Letters, 84(22):4562-4564 (May 31, 2004). [
Abstract ]
·
University of Pretoria (South Africa): "Low-Operating-Voltage Integrated Silicon Light-Emitting Devices." H. Aharoni and M. du Plessis, IEEE Journal of Quantum Electronics, 40(5):557-563 (May, 2004). [
Abstract ]
·
University of Ulm (Germany) / Bruker AXS (Germany): "ZnO Metal-Organic Vapor Phase Epitaxy: Present State and Prospective Applications." A. Waag, T. Gruber, K. Thonke, R. Sauer, R. Kling, C. Kirchner, and H. Ress, Journal of Alloys and Compounds, 371(1-2):77-81 (May 26, 2004). [
Abstract ]
·
Virginia Commonwealth University / Balikesir University (Turkey) / Cermet Inc.: "Effect of Thermal Treatment on ZnO Substrate for Epitaxial Growth." X. Gu, S. Sabuktagin, A. Teke, D. Johnstone, H. Morkoc, B. Nemeth, and J. Nause, Journal of Materials Science-Materials in Electronics , 15(6):373-378 (June, 2004). [
Abstract ]
·
Waseda University (Japan): "Intrinsic Defects in ZnO Films Grown by Molecular Beam Epitaxy." T. Tatsumi, M. Fujita, N. Kawamoto, M. Sasajima, and Y. Horikoshi, Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, 43(5a):2602-2606 (May, 2004). [
Abstract ]
E. Review Articles
·
CSIC (Spain): "Photon-Assisted Transport in Semiconductor Nanostructures." G. Platero and R. Aguado, Physics Reports-Review Section of Physics Letters, 395(1-2):1-157 (May, 2004). [
Abstract ]
·
Lumilog (France): "Metal Organic Vapour Phase Epitaxy of GaN and Lateral Overgrowth." P. Gibart, Reports on Progress in Physics, 67(5):667-715 (May, 2004). [
Abstract ]
·
Sandia National Laboratories: "Solid-State Lighting - Lamps, Chips, and Materials for Tomorrow." J. Tsao, IEEE Circuits & Devices, 20(3):28-37 (May, 2004-June 30, 2004). [Abstract] [ IEEE
link, but abstract not available ]
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The information presented in this section has been developed by
Perspectives, a firm that specializes in technical and market intelligence, with assistance from Sandia National Labs. |
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Point of Contact: Jeff Tsao |
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Web site maintained by: Dorothy Meister |