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ISSUE 22: SCIENTIFIC LITERATURE (Early Feb-Late Apr 2004) |
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From the Technical Literature The material in this section is selected from scientific and technical papers that became available during the reporting time period. Links to online abstracts are provided. Most online abstracts are freely accessible to the public. A few require journal subscriptions or memberships, and are noted as such. The technical literature section is roughly organized by subject area and, within subjects, alphabetically by institution of the lead author. Use the links below to go directly to a section. A. Materials and Device Fabrication B. Materials and Device Design Properties A. Materials and Device Fabrication
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AF Ioffe Physical Technical Institute (Russia) / Technical University of Berlin (Germany) / Humboldt University (Germany) / Institute for Analytical Instruments (Russia) / Industrial Technology Research Institute (Taiwan): "Structural and optical properties of Ga(As,N) epilayers grown with continuous and pulsed deposition and nitridization." I.P. Soshnikov, A.R. Kovsh, V.M. Ustinov, N.V. Kryzhanovskaya, N.N. Ledentsov, D. Bimberg, H. Kirmse, W. Neumann et al , Semiconductor Science and Technology, 19(3):501-504 (March, 2004). [
Abstract ]
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Ben Gurion University of Negev (Israel) / University of Southern California: "Temperature dependence of excitonic recombination in lateral epitaxially overgrown InGaN/GaN quantum wells studied with cathodoluminescence." S. Khatsevich, D.H. Rich, X. Zhang, W. Zhou, and P.D. Dapkus, Journal of Applied Physics, 95(4):1832-1842 (February 15, 2004). [
Abstract ]
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CEA Grenoble (France) / NGK Insulators (Japan): "Modification of GaN(0001) Growth Kinetics by Mg Doping." E. Monroy, T. Andreev, P. Holliger, E. Bellet-Amalric, T. Shibata, M. Tanaka, and B. Daudin, Applied Physics Letters, 84(14):2554-2556 (April 5, 2004). [
Abstract ]
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Chinese Academy of Science (China): "Effects of carrier gas on the stress of a-plane GaN films grown on r-plane sapphire substrates by metalorganic chemical vapor deposition." D.S. Li, H. Chen, H.B. Yu, Y.J. Han, X.H. Zheng, Q. Huang, and J.M. Zhou, Journal of Crystal Growth, 263(1-4):76-79 (March 1, 2004). [
Abstract ]
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Chinese Academy of Sciences (China): "Effects of TMIn flow on the interface and optical properties of InGaN/GaN mutiple quantum wells." J.P. Liu, R.Q. Jin, J.J. Zhu, J.C. Zhang, J.F. Wang, M. Wu, J. Chen, Y.T. Wang et al , Journal of Crystal Growth, 264(1-3):53-57 (March 15, 2004). [
Abstract ]
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Chinese Academy of Sciences (China): "Influence of the growth temperature of the high-temperature AlN buffer on the properties of GaN grown on Si(111) substrate." Y. Lu, X.L. Liu, X.H. Wang , D.C. Lu, D.B. Li, X.X. Han, G.W. Cong, and Z.G. Wang, Journal of Crystal Growth, 263(1-4):4-11 (March 1, 2004). [
Abstract ]
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Chinese Academy of Sciences (China): "Photoluminescence study of Si-doped (11(2)over-bar0) a-plane GaN grown on (1(1)over-bar02) r-plane sapphire by metalorganic chemical vapor deposition." H.B. Yu, H. Chen, D.S. Li, Y.J. Han, X.H. Zheng, Q. Huang, and J.M. Zhou, Journal of Crystal Growth, 263(1-4):94-98 (March 1, 2004). [
Abstract ]
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CNR IMIP (Italy) / INSTM (Italy) / Georgia Institute of Technology / Duke University: "The surface modification and reactivity of LiGaO2 substrates during GaN epitaxy." M. Losurdo, D. Giuva, G. Bruno, S. Huang, T.H. Kim, and A.S. Brown, Journal of Crystal Growth, 264(1-3):139-149 (March 15, 2004). [
Abstract ]
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CNRS (France): "Effects of GaNAsSb intermediate barriers on GaInNAsSb quantum well grown by molecular beam epitaxy." L.H. Li, V. Sallet, G. Patriarche, L. Largeau, L. Travers, and J.C. Harmand, Journal of Crystal Growth, 263(1-4):58-62 (March 1, 2004). [
Abstract ]
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Dalian University of Technology (China): "Electron cyclotron resonance plasma enhanced metalorganic chemical vapor deposition system with monitoring in situ for epitaxial growth of group-III nitrides." Y. Xu, B. Gu, and F.W. Qin, Journal of Vacuum Science & Technology A, 22(2):302-308 (March, 2004-April 30, 2004). [
Abstract ]
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Dongguk University (South Korea) / Gyeongsang National University / Kansas State University: "X-ray diffraction analysis of the defect structure in AlxGa1-xN films grown by metalorganic chemical vapor deposition." Y.S. Park, K.H. Kim, J.J. Lee, H.S. Kim, T.W. Kang , H.X. Jiang, and J.Y. Lin, Journal of Materials Science, 39(5):1853-1855 (March 1, 2004). [
Abstract ]
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Feng Chia University (Taiwan): "Improvement in optical properties and surface morphologies of GaN films using low-temperature GaN interlayers." Y.L. Tsai and J.R. Gong, Journal of Crystal Growth, 263(1-4):176-180 (March 1, 2004). [
Abstract ]
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Fundan University (China) / Eastern Michigan University: "Chemical structure and micro-mechanical properties of ultra-thin films of boron carbide prepared by pulsed-laser deposition." J. Sun, H. Ling, W.J. Pan, N. Xu, Z.F. Ying, W.D. Shen, and J.D. Wu, Tribology Letters, 17(1):99-104 (July, 2004). [
Abstract ]
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Henan Normal University (China) / University of Hong Kong (China): "Nitrogen adatom diffusion on a Ga-rich GaN (0001) surface ." X.Q. Dai, H.S. Wu, M.H. Xie, S.H. Xu, and S.Y. Tong, Chinese Physics Letters, 21(3):527-529 (March, 2004). [
Abstract ]
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Hokkaido University (Japan): "Growth of GaN crystals from the vapor phase." S. Shimada and R. Taniguchi, Journal of Crystal Growth, 263(1-4):1-3 (March 1, 2004). [
Abstract ]
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Industrial Technology Research Institute (Taiwan) / National Central University (Taiwan) / National Chiao Tung University (Taiwan): "Ultra-high-density InGaN quantum dots grown by metalorganic chemical vapor deposition." R.C. Tu, C.J. Tun, C.C. Chuo, B.C. Lee, C.E. Tsai , T.C. Wang, J. Chi, C.P. Lee et al , Japanese Journal of Applied Physics Part 2-Letters, 43(2B):L264-L266 (February 15, 2004). [
Abstract ]
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IST Leibniz-Institut für Oberflächenmodifizierung e.V. (Germany) / University of Jena (Germany) / University of Leipzig (Germany): "Comparison of ion-beam-assisted molecular beam epitaxy with conventional molecular beam epitaxy of thin hexagonal gallium nitride films." S. Sienz, J.W. Gerlach, T. Hoche, A. Sidorenko, T.G. Mayerhofer, G. Benndorf, and B. Rauschenbach, Journal of Crystal Growth, 264(1-3):184-191 (March 15, 2004). [
Abstract ]
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Jawaharlal Nehru Center for Advanced Scientific Research (India) / Indian Institute for Science (India): "New solvothermal routes for GaN nanocrystals." K. Sardar and C.N.R. Rao, Advanced Materials, 16(5):425-+ (March 5, 2004). [
Abstract ]
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Kochi Industrial Promotion Center (Japan) / Nitride Semiconductor Co. Ltd. (Japan) / University of Tokushima (Japan): "Fabrication of high-performance 370 nm ultraviolet light-emitting diodes." H.X. Wang, H.D. Li, Y.B. Lee, H. Sato, K. Yamashita, T. Sugahara, and S. Sakai, Journal of Crystal Growth, 264(1-3):48-52 (March 15, 2004). [
Abstract ]
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Korea Institute of Science and Technology (South Korea) / Chongju University (Korea) / Korea Photonics Technology Institute (South Korea): "Ammonolysis of Ga2O3 and its application to the sublimation source for the growth of GaN film." Y.J. Park, C.S. Oh, T.H. Yeom, and Y.M. Yu, Journal of Crystal Growth, 264(1-3):1-6 (March 15, 2004). [
Abstract ]
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Kyoto University (Japan) / University of California at Berkeley / Lawrence Berkeley Laboratory: "Evaluation of CCl4 and CS2 as carbon doping sources in MBE growth of GaN." R. Armitage, Q. Yang, H. Feick, and E.R. Weber, Journal of Crystal Growth, 263(1-4):132-142 (March 1, 2004). [
Abstract ]
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Linkoping University (Sweden) / University of Florida / National Central University (Taiwan) / US Army Research Office: "On the Origin of Spin Loss in GaMnN/InGaN Light-Emitting Diodes." I. Buyanova, M. Izadifard, W. Chen, J. Kim, F. Ren, G. Thaler, C. Abernathy, S. Pearton et al , Applied Physics Letters, 84(14):2599-2601 (April 5, 2004). [
Abstract ]
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Nanyang Technology University (Singapore) / Nitride Technology Pte. Ltd. (Singapore): "Performance Enhancement of InGaN Light-Emitting Diodes by Laser Lift-Off and Transfer From Sapphire to Copper Substrate." B. Tan, S. Yuan, and X. Kang, Applied Physics Letters, 84(15):2757-2759 (April 12, 2004). [
Abstract ]
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National Cheng Kung University (China) / South Epitaxy Corp. (Taiwan): "Nitride-based LEDs with textured side walls." C.S. Chang, S.J. Chang, Y.K. Su, C.T. Lee, Y.C. Lin, W.C. Lai, S.C. Shei , J.C. Ke et al , IEEE Photonics Technology Letters, 16(3):750-752 (March, 2004). [
Abstract ]
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National Cheng Kung University (Taiwan) / Chinese Academy of Sciences (China): "InGaN/GaN multi-quantum dot light-emitting diodes." L.W. Ji, Y.K. Su , S.T. Chang, C.S. Chang, L.W. Wu, W.C. Lai, X.L. Du, and H. Chen, Journal of Crystal Growth, 263(1-4):114-118 (March 1, 2004). [
Abstract ]
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National Cheng Kung University (Taiwan) / South Epitaxy Corp. (Taiwan) / National Central University (Taiwan): "Nitride-Based LEDs With an SPS Tunneling Contact Layer and an ITO Transparent Contact." S. Chang, C. Chang, Y. Su, R. Chuang, W. Lai, C. Kuo, Y. Hsu, Y. Lin et al , IEEE Photonics Technology Letters, 16(4):1002-1004 (April, 2004). [
Abstract ]
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National Cheng Kung University (Taiwan) / South Taiwan University of Technology (Taiwan): "Growth of ultra small self-assembled InGaN nanotips." L.W. Ji, Y.K. Su, S.J. Chang, T.H. Fang, T.C. Wen, and S.C. Hung, Journal of Crystal Growth, 263(1-4):63-67 (March 1, 2004). [
Abstract ]
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National Cheng Kung University (Taiwan) / South Taiwan University of Technology (Taiwan) / Toko University (Taiwan): "InGaN/GaN blue light-emitting diodes with self-assembled quantum dots." Y.K. Su, S.J. Chang, L.W. Ji, C.S. Chang , L.W. Wu, W.C. Lai, T.H. Fang, and K.T. Lam, Semiconductor Science and Technology, 19(3):389-392 (March, 2004). [
Abstract ]
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National Cheng Kung University (Taiwan) / Waseda University (Japan): "Modulated beam growth method for MBE grown GaN layers." K.T. Liu, T. Tezuka, S. Sugita, Y. Watari, Y. Horikoshi, Y.K. Su, and S.J. Chang, Journal of Crystal Growth, 263(1-4):400-405 (March 1, 2004). [
Abstract ]
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National Chiao Tung University (Taiwan): "Effect of rapid thermal annealing on beryllium implanted p-type GaN." H.W. Huang, C.C. Kao, J.Y. Tsai, C.C. Yu, C.F. Chu, J.Y. Lee, S.Y. Kuo, C.F. Lin et al , Materials Science and Engineering B-Solid State Materials for Advanced Technology, 107(3):237-240 (March 25, 2004). [
Abstract ]
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National Chiao Tung University (Taiwan): "MOCVD growth of AlN/GaN DBR structures under various ambient conditions." H.H. Yao, C.F. Lin, H.C. Kuo, and S.C. Wang, Journal of Crystal Growth, 262(1-4):151-156 (February 15, 2004). [
Abstract ]
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National Institute of Advanced Industrial Science and Technology (Japan): "Dynamically stable gallium-induced 3x3-SiC (0001) surface for two-dimensional GaN nucleation by molecular-beam epitaxy." K. Jeganathan, M. Shimizu, and H. Okumura, Journal of Applied Physics, 95(7):3761-3764 (April 1, 2004). [
Abstract ]
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National Sun Yat Sen University (Taiwan) / Macronix International Co. Ltd. (Taiwan) / Chinese Military Academy (Taiwan): "Indium-facilitated growth and characterization of N-polar GaN by RF plasma-assisted molecular beam epitaxy." J.H. Huang, K.Y. Hsieh, J.K. Tsai, H.L. Huang, C.H. Hsieh, Y.C. Lee, K.L. Chuang, I. Lo et al , Journal of Crystal Growth, 263(1-4):301-307 (March 1, 2004). [
Abstract ]
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North Carolina State University: "Plasma characteristics in pulsed direct current reactive magnetron sputtering of aluminum nitride thin films." J.W. Lee, J.J. Cuomo, and M. Bourham, Journal of Vacuum Science & Technology A, 22(2):260-263 (March, 2004-April 30, 2004). [
Abstract ]
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North Carolina State University / Arizona State University / Purdue University: "Mass transfer in A1N crystal growth at high temperatures." V. Noveski, R. Schlesser, S. Mahajan, S. Beaudoin, and Z. Sitar, Journal of Crystal Growth, 264(1-3):369-378 (March 15, 2004). [
Abstract ]
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Ohio University: "Epitaxial lateral overgrowth of gallium nitride on silicon substrate." W.T. Ju, D.A. Gulino, and R. Higgins, Journal of Crystal Growth, 263(1-4):30-34 (March 1, 2004). [
Abstract ]
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Peking University (China) / Academy Sinica (China): "C and Si ion implantation and the origins of yellow luminescence in GaN." L. Dai, G.Z. Ran, J.C. Zhang, X.F. Duan, W.C. Lian, and G.G. Qin, Applied Physics A-Materials Science & Processing, 79(1):139-142 (June, 2004). [
Abstract ]
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Peking University (China) / Chinese Academy of Sciences (China): "Large-scale synthesis of single-phase, high-quality GaN nanocrystallites." J.C. Wang, D.P. Yu, C.Y. Li, J.F. Zhou, Y.Z. Wang, and S.Q. Feng, Applied Physics A-Materials Science & Processing, 78(5):753-755 (March, 2004). [
Abstract ]
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Seoul National University (South Korea) / Kyungpook National University (South Korea) / Korea Research Institute for Standards and Science (South Korea): "Influence of Al Doping on Lattice Strain and Electrical Properties of Epitaxial GaN Films Grown by Metalorganic Chemical Vapor Deposition on Al2O3 Substrate." J. Jeong, J. Choi, C. Hwang, H. Kim, J. Lee, J. Lee, and C. Kim, Applied Physics Letters, 84(14):2575-2577 (April 5, 2004). [
Abstract ]
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Showa Denko Co. Ltd. (Japan): "Suppression of indium vaporization from GaN/GaInN superlattice by BP capping layer." M. Odawara, K. Yamatake, T. Yamashita, and T. Udagawa, Journal of Crystal Growth, 263(1-4):645-647 (March 1, 2004). [
Abstract ]
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University Karlsruhe (Germany) / University of Stuttgart (Germany) / Center for Hetero Epitaxie Research and Applications (France): "Comparison of the In distribution in InGaN/GaN quantum well structures grown by molecular beam epitaxy and metalorganic vapor phase epitaxy." V. Potin, E. Hahn, A. Rosenauer, D. Gerthsen, B. Kuhn, F. Scholz, A. Dussaigne, B. Damilano et al , Journal of Crystal Growth, 262(1-4):145-150 (February 15, 2004). [
Abstract ]
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University of Alabama / US Naval Research Lab / Sandia National Laboratories: "Thermal activation of Mg-doped GaN as monitored by electron paramagnetic resonance spectroscopy." M.E. Zvanut, D.M. Matlock, R.L. Henry, D. Koleske, and A. Wickenden, Journal of Applied Physics, 95(4):1884-1887 (February 15, 2004). [
Abstract ]
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University of California at Santa Barbara: "The growth of N-face GaN by MOCVD: effect of Mg, Si, and In." P.R. Tavernier, T. Margalith, J. Williams, D.S. Green, S. Keller, S.P. DenBaars, U.K. Mishra, S. Nakamura et al , Journal of Crystal Growth, 264(1-3):150-158 (March 15, 2004). [
Abstract ]
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University of California at Santa Barbara: "Microstructural evolution of a-plane GaN grown on a-plane SiC by metalorganic chemical vapor deposition." M.D. Craven, F. Wu, A. Chakraborty, B. Imer, U.K. Mishra, S.P. DenBaars, and J.S. Speck, Applied Physics Letters, 84(8):1281-1283 (February 23, 2004). [
Abstract ]
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University of California at Santa Barbara / Stanley Electrict Co. Ltd. (Japan): "Blue GaN-Based Light-Emitting Diodes Grown by Molecular-Beam Epitaxy With External Quantum Efficiency Greater Than 1.5%." P. Waltereit, H. Sato, C. Poblenz, D. Green, J. Brown, M. McLaurin, T. Katona, S. DenBaars et al , Applied Physics Letters, 84(15):2748-2750 (April 12, 2004). [
Abstract ]
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University of Florida / Illinois Institute of Technology: "Effect of Nucleation Layer on the Magnetic Properties of GaMnN." G. Thaler, R. Frazier, B. Gila, J. Stapleton, M. Davidson, C. Abernathy, S. Pearton, and C. Segre, Applied Physics Letters, 84(14):2578-2580 (April 5, 2004). [
Abstract ]
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University of Florida / Toyota Central Research and Development Labs Inc. (Japan) / National Central University (Taiwan) / Samsung Advanced Institute of Technology (South Korea): "Si+ ion implanted MPS bulk GaN diodes." Y. Irokawa, J. Kim, F. Ren, K.H. Baik, B.P. Gila, C.R. Abernathy, S.J. Pearton, C.C. Pan et al , Solid-State Electronics, 48(5):827-830 (May, 2004). [
Abstract ]
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University of Liverpool (UK): "Fabrication of GaN Cantilevers on Silicon Substrates for Microelectromechanical Devices." S. Davies, T. Huang, M. Gass, A. Papworth, T. Joyce, and P. Chalker, Applied Physics Letters, 84(14):2566-2568 (April 5, 2004). [
Abstract ]
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University of Mining and Metallurgy - Austrian Academy of Sciences (Austria) / University of Augsburg (Germany) / Leibnitz IOM (Germany): "Temperature dependence of in-plane stresses in sublayers of Al/AlN/Al2O3(0001) structure." J. Keckes, S. Six, J.W. Gerlach, and B. Rauschenbach, Journal of Crystal Growth, 262(1-4):119-123 (February 15, 2004). [
Abstract ]
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University of New Mexico: "Spatial phase separation of GaN selectively grown on a nanoscale faceted Si surface." S.C. Lee, X.Y. Sun, S.D. Hersee, S.R.J. Brueck, and H. Xu, Applied Physics Letters, 84(12):2079-2081 (March 22, 2004). [
Abstract ]
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University of Nottingham (UK): "P-type conductivity in cubic GaMnN layers grown by molecular beam epitaxy." S.V. Novikov, K.W. Edmonds, A.D. Giddings, K.Y. Wang, C.R. Staddon, R.P. Campion, B.L. Gallagher, and C.T. Foxon, Semiconductor Science and Technology, 19(3):L13-L16 (March, 2004). [
Abstract ]
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University of Strathclyde (UK) / Oxford Lasers Ltd. (UK): "Micromachining and Dicing of Sapphire, Gallium Nitride and Micro LED Devices With UV Copper Vapour Laser." E. Gu, C. Jeon, H. Choi, G. Rice, M. Dawson, E. Illy, and M. Knowles, Thin Solid Films, 453-54:462-466 (April 1, 2004). [
Abstract ]
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University of Texas at Austin: "Adsorption, desorption, and reaction of a gallium nitride precursor, (H2GaNHNMe2)(2), on HfO2." B. Luo, S.Y. Lee, and J.M. White, Chemistry of Materials, 16(4):629-638 (February 24, 2004). [
Abstract ]
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University of Wisconsin: "Epitaxial GaN1-yAsy layers with high As content grown by metalorganic vapor phase epitaxy and their band gap energy." A. Kimura, C.A. Paulson, H.F. Tang, and T.F. Kuech, Applied Physics Letters, 84(9):1489-1491 (March 1, 2004). [
Abstract ]
B. Materials and Device Design Properties
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Abou-Bekr Belkaid University (Algeria) / University of Grenoble-CNRS (France) / University of Technology of Belfort (France): "Properties of strained zinc-blende GaN: first-principles study." M.B. Kanoun, A.E. Merad, J. Cibert, H. Aourag, and G. Merad, Journal of Alloys and Compounds, 366(1-2):86-93 (March 10, 2004). [
Abstract ]
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Arizona State University: "Mapping In concentration, strain, and internal electric field in InGaN/GaN quantum well structure." M. Takeguchi, M.R. McCartney, and D.J. Smith, Applied Physics Letters, 84(12):2103-2105 (March 22, 2004). [
Abstract ]
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Boston University: "Investigation of excitons in AlGaN/GaN multiple quantum wells by lateral photocurrent and photoluminescence spectroscopies." I. Friel, C. Thomidis, Y. Fedyunin, and T.D. Moustakas, Journal of Applied Physics, 95(7):3495-3502 (April 1, 2004). [
Abstract ]
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Chinese Academy of Sciences (China): "The magnetic and structure properties of room-temperature ferromagnetic semiconductor (Ga,Mn)N." F.Q. Zhang, N.F. Chen, X.L. Liu, Z.K. Liu, S.Y. Yang, and C.L. Chai, Journal of Crystal Growth, 262(1-4):287-289 (February 15, 2004). [
Abstract ]
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Chinese Academy of Sciences (China) / Jilin University (China) / Beijing University of Technology (China): "Effect of Critical Thickness on Structural and Optical Properties of Inxga1-Xn/Gan Multiple Quantum Wells." W. Lu, D. Li, C. Li, F. Shen, and Z. Zhang, Journal of Applied Physics, 95(8):4362-4366 (April 15, 2004). [
Abstract ]
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Chonbuk National University (South Korea): "Investigations on alloy potential fluctuations in AlxGa1-xN epilayers using optical characterizations." S.J. Chung, M.S. Kumar, H.J. Lee, and E.K. Suh, Journal of Applied Physics, 95(7):3565-3568 (April 1, 2004). [
Abstract ]
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Fudan University (China): "Structural and optical investigation of GaN grown by metal-organic chemical vapor deposition." X.Y. Gao, S.Y. Wang, J. Li, Y.X. Zheng, R.J. Zhang, P. Zhou, Y.M. Yang, and L.Y. Chen, Journal of the Korean Physical Society, v.44(no.3, pt.2):p.765-768 (March, 2004). [No URL available]
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Hosei Univeristy (Japan) / Hosei University Research Institute: "Anodic oxidation of GaN in N-methylacetamide for electrical profiling of doped layers in GaN." S. Matsunaga, S. Yoshida, T. Kawaji, and T. Inada, Journal of the Electrochemical Society, 151(3):G200-G204 (March, 2004). [
Abstract ]
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Institute for Rare Metals (Russia) / University of Florida / Linkoping University (Sweden) / National Central University (Taiwan) / USA Research Office: "Electrical and luminescent properties and the spectra of deep centers in GaMnN/InGaN light-emitting diodes." A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, J. Kim, F. Ren, G.T. Thaler, R.M. Frazier, B.P. Gila et al , Journal of Electronic Materials, 33(3):241-247 (March, 2004). [
Abstract ]
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Kansas State University: "Near-field optical study of AlGaN/GaN quantum-well waveguide." J. Shakya, J.Y. Lin, and H.X. Jiang, Applied Physics Letters, 84(11):1832-1834 (March 15, 2004). [
Abstract ]
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Kansas State University / Warsaw University of Technology (Poland) / Wichita State University / Stanford Linear Accelerator: "Defect-selective etching of bulk AlN single crystals in molten KOH/NaOH eutectic alloy." D. Zhuang, J.H. Edgar, B. Strojek, J. Chaudhuri, and Z. Rek, Journal of Crystal Growth, 262(1-4):89-94 (February 15, 2004). [
Abstract ]
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Kyushu Institute of Technology (Japan): "Unusual temperature dependence of electroluminescence intensity in blue InGaN single quantum well diodes." A. Hori, D. Yasunaga, and K. Fujiwara, Microelectronics Journal, 35(4):363-366 (April, 2004). [
Abstract ]
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Nagoya Institute of Technology (Japan): "High-temperature-grown quaternary AlInGaN epilayers and multiple quantum wells for ultraviolet emission." Y. Liu, T. Egawa, H. Ishikawa, H. Jiang, B.J. Zhang, M.S. Hao, and T. Jimbo, Journal of Crystal Growth, 264(1-3):159-164 (March 15, 2004). [
Abstract ]
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Nagoya Institute of Technology (Japan): "Thermal stability of InGaN multiple-quantum-well light-emitting diodes on an AlN/sapphire template." B.J. Zhang, T. Egawa, H. Ishikawa, Y. Liu, and T. Jimbo, Journal of Applied Physics, 95(6):3170-3174 (March 15, 2004). [
Abstract ]
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Nanyang Technological University (Singapore) / University of Tokushima (Japan): "Investigations of V-shaped defects and photoluminescence of thin GaN-rich GaNP layers grown on a GaN epilayer by metalorganic chemical vapor deposition." H.D. Li, M. Tsukihara, Y. Naoi, Y.B. Lee, and S. Sakai, Applied Physics Letters, 84(11):1886-1888 (March 15, 2004). [
Abstract ]
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National Central University (Taiwan): "Electroreflectance study on the polarization field in InGaN/AlInGaN multiple quantum wells." T.M. Hsu, C.Y. Lai, W.H. Chang, C.C. Pan, C.C. Chuo, and J.I. Chyi, Applied Physics Letters, 84(7):1114-1116 (February 16, 2004). [
Abstract ]
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National Changhua University of Education (Taiwan) / Hsiuping Institute of Technology (Taiwan): "Effect of band-offset ratio on analysis of violet-blue InGaN laser characteristics." Y.K. Kuo, B.T. Liou, M.L. Chen, S.H. Yen , and C.Y. Lin, Optics Communications, 231(1-6):395-402 (February 15, 2004). [
Abstract ]
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National Cheng Kung University (Taiwan) / National Taiwan University of Science and Technology (Taiwan): "Piezoreflectance and contactless electroreflectance spectra of an optoelectronic material: GaInNP grown on GaAs substrates." Y.K. Su, C.H. Wu, Y.S. Huang, H.P. Hsu, W.C. Chen, S.H. Hsu, and S.J. Chang, Journal of Crystal Growth, 64(1-3):357-362 (March 15, 2004). [
Abstract ]
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National Chiao Tung University (Taiwan): "Study of Gan Light-Emitting Diodes Fabricated by Laser Lift-Off Technique." C. Chu, F. Lai, J. Chu, C. Yu, C. Lin, H. Kuo, and S. Wang, Journal of Applied Physics, 95(8):3916-3922 ( April 15, 2004). [
Abstract ]
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National Taiwan University (Taiwan) / Kansas State University: "Mechanism of enhanced luminescence in InxAlyGa1-x-yN quaternary epilayers." C.H. Chen, Y.F. Chen, Z.H. Lan, L.C. Chen, K.H. Chen, H.X. Jiang, and J.Y. Lin, Applied Physics Letters, 84(9):1480-1482 (March 1, 2004). [
Abstract ]
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NIST / University of Maryland: "Combinatorial
investigation of structural quality of Au/Ni contacts on GaN." A.V.
Davydov, L.A. Bendersky, W.J. Boettinger, D. Josell, M.D. Vaudin, K.S. Chang,
and I. Takeuchi, Applied Surface Science, 223(1-3):24-29 (February
15, 2004). [
Abstract ]
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NMRC (Ireland) / University of Dublin (Ireland) / CNRS (France) / Thales Research & Technology (France): "Origin of power fluctuations in GaN resonant-cavity light-emitting diodes." B. Roycroft, M. Akhter, P. Maaskant, B. Corbett, A. Shaw, L. Bradley, P. de Mierry, and M.A. Poisson, Optics Express, 12(5):736-741 (March 8, 2004). [
Abstract ]
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Northwestern University: "High-power 280 nm AlGaN light-emitting diodes based on an asymmetric single-quantum well." K. Mayes, A. Yasan, R. McClintock, D. Shiell, S.R. Darvish, P. Kung, and M. Razeghi, Applied Physics Letters, 84(7):1046-1048 (February 16, 2004). [
Abstract
]
·
NREL: "Type I to type II transition at the interface between random and ordered domains of AlxGa1-xN alloys." S.V. Dudiy and A. Zunger, Applied Physics Letters, 84(11):1874-1876 (March 15, 2004). [
Abstract ]
·
Paul Drude Institut fur Festkorperelekt (Germany): "Polarization properties of nonpolar GaN films and (In,Ga)N/GaN multiple quantum wells." H.T. Grahn and K.H. Ploog, Applied Physics A-Materials Science & Processing, 78(4):447-451 (March, 2004). [
Abstract ]
·
Paul Drude Institut fur Festkorperelekt (Germany): "Properties of InN layers grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy." T. Ive, O. Brandt, M. Ramsteiner, M. Giehler, H. Kostial, and K.H. Ploog, Applied Physics Letters, 84(10):1671-1673 (March 8, 2004). [
Abstract ]
·
Peking University (China): "Study of photoluminescence and absorption in phase- separation InGaN films." Z.Z. Chen, Z.X. Qin, X.D. Hu, T.J. Yu, Z.J. Yang, Y.Z. Tong, X.M. Ding, and G.Y. Zhang, Physica B-Condensed Matter, 344(1-4):292-296 (February 15, 2004). [
Abstract ]
·
Politecnico di Torino (Italy): "Compact conversion and cyclostationary noise modeling of pn-junction diodes in low-injection - Part 1: Model derivation." F. Bonani, S.D. Guerrieri, and G. Ghione, IEEE Transactions on Electron Devices, 51(3):467-476 (March, 2004). [Abstract ]
·
Politecnico di Torino (Italy) / INFM (Italy): "Compact conversion and cyclostationary noise modeling of pn-junction diodes in low-injection - Part II: Discussion." F. Bonani, S.D. Guerrieri, and G. Ghione, IEEE Transactions on Electron Devices, 51(3):477-485 (March, 2004). [
Abstract ]
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Sandia National Laboratories: "Effect of diffraction and film-thickness gradients on wafer-curvature measurements of thin-film stress." W.G. Breiland, S.R. Lee, and D.D. Koleske, Journal of Applied Physics, 95(7):3453-3465 (April 1, 2004). [
Abstract ]
·
Sandia National Laboratories / Lumileds Lighting: "Luminescence in GaN co-doped with carbon and silicon." C.H. Seager, D.R. Tallant, J. Yu, and W. Gotz, Journal of Luminescence, 106(2):115-124 (March, 2004). [
Abstract ]
·
Sensor Electronics Technology Inc. / University of California at Berkeley - Lawrence Berkeley Lab / University of South Carolina:
"High quality InN/GaN heterostructures grown by migration enhanced metalorganic chemical vapor deposition." R.S.Q. Fareed, R. Jain, R. Gaska, M.S. Shur, J. Wu, W. Walukiewicz, and M.A. Khan, Applied Physics Letters, 84(11):1892-1894 (March 15, 2004). [
Abstract ]
·
South China Normal University (China) / Nanchang University (China): "Study of the Blue Luminescence in Unintentional Doped GaN Films Grown by MOCVD." S. Li, F. Jiang, G. Fan, L. Wang, C. Xiong, X. Peng, and H. Mo, Journal of Luminescence, 106(3-4):219-223 (April, 2004). [
Abstract ]
·
Texas Tech University: "Dependence of the stress-temperature coefficient on dislocation density in epitaxial GaN grown on alpha-Al2O3 and 6H-SiC substrates." I. Ahmad, M. Holtz, N.N. Faleev, and H. Temkin, Journal of Applied Physics, 95(4):1692-1697 (February 15, 2004). [
Abstract ]
·
Tokyo Institute of Technology (Japan): "Photoluminescence and lasing characteristics of GaInNAs/GaAsP strain-compensated quantum wells." M. Kawaguchi, T. Miyamoto, A. Saitoh, and F. Koyama, Japanese Journal of Applied Physics Part 2-Letters, 43(2B):L267-L270 (February 15, 2004 ). [
Abstract ]
·
UMIST (UK) / University of Bath (UK) / EPSRC National Center 3v Technology (UK) / University of Bristol (UK): "Pressure-dependent photoluminescence study of epitaxial AlGaN to 19 GPa." P. Harmer, M.P. Halsall, D. Wolverson, P.J. Parbrook, and S.J. Henley, Semiconductor Science and Technology, 19(3):L22-L24 (March, 2004). [
Abstract ]
·
Universiti Sains Malaysia (Malaysia) / Ohio University: "Microcrystalline GaN film grown on Si(100) and its application to MSM photodiode." Z. Hassan, Y.C. Lee, F.K. Yam, M.J. Abdullah, K. Ibrahim, and M.E. Kordesch, Materials Chemistry and Physics, 84(2-3):369-374 (April, 2004). [
Abstract ]
·
University of Canterbury (New Zealand): "Photoconductivity
spectra from n-doped GaN: evidence for two distinct types of donors."
F. Khan, S.A. Brown, A. Liu, S. Gourley, V. Christie, O. Dickie, and R.J. Reeves,
Solid-State Electronics, 48(3):373-377 (March, 2004). [
Abstract ]
·
University of Pavia (Italy) / University of Montpellier (France): " Enhancement of visible second-harmonic generation in epitaxial GaN-based two-dimensional photonic crystal structures." G. Vecchi, J. Torres, D. Coquillat, M.L. d'Yerville, and A.M. Malvezzi, Applied Physics Letters, 84(8):1245-1247 (February 23, 2004). [
Abstract ]
·
University of Surrey (UK): "Advances in the application of modulation spectroscopy to vertical cavity structures." T.J.C. Hosea, Thin Solid Films, 450(1):3-13 (February 22, 2004).
[Abstract ]
·
University of Sydney (Australia) / Institut Français de Mécanique (France): "Measurements of composition and electronic structure in an operating light-emitting diode using analytical electron microscopy." M. Bosman, M. Sitarz, A.Z. Sikorski, and V.J. Keast, Applied Physics Letters, 84(8):1371-1373 (February 23, 2004). [
Abstract ]
·
US Army Research Office / Kansas tate University / SVT Associates Inc.: "Electroluminescent properties of erbium-doped III-N light-emitting diodes." J.M. Zavada, S.X. Jin, N. Nepal, J.Y. Lin, H.X. Jiang, P. Chow, and B. Hertog, Applied Physics Letters, 84(7):1061-1063 (February 16, 2004). [
Abstract ]
·
Wroclaw Technical University (Poland): "Photomodulated reflectance and transmittance: optical characterisation of novel semiconductor materials and device structures." J. Misiewicz, G. Sek, R. Kudrawiec, and P. Sitarek, Thin Solid Films, 450(1):14-22 (February 22, 2004). [
Abstract ]
·
Xidian University (China): "Thickness Measurement of GaN Film Based on Transmission Spectra." J. Zhang, H. Yue, P. Li, F. Long, and F. Qian, Acta Physica Sinica, 53(4):1243-1246 (April, 2004). [ No URL available ]
·
Yamaguchi University (Japan) / Matsuchita Electrical
Industrial Co. Ltd. (Japan): "Biexciton luminescence from AlxGa1-xN
epitaxial layers." Y. Yamada, Y. Ueki, K. Nakamura, T. Taguchi, Y.
Kawaguchi, A. Ishibashi, and T. Yokogawa, Applied Physics Letters,
84(12):2082-2084 (March 22, 2004). [
Abstract ]
C. Packaging and Reliability
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Hsiuping Institute of Technology (Taiwan): "Kinetics study of thermal decomposition of electronic packaging material." T.H. Liou, Chemical and Engineering Journal, 98(1-2):39-51 (March 15, 2004). [
Abstract ]
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Korea Research Institute for Chemical Technology (South Korea) / Yonsei University (South Korea): "Optical properties of Eu2+-activated Sr2SiO4 phosphor for light-emitting diodes." J.K. Park, K.J. Choi, C.H. Kim, H.D. Park , and S.Y. Choi, Electrochemical and Solid State Letters , 7(5):H15-H17 (2004). [
Abstract ]
·
KRICT (South Korea) / Yonsei University (South Korea): "Application of strontium silicate yellow phosphor for white light-emitting diodes." J.K. Park, C.H. Kim, S.H. Park, H.D. Park, and S.Y. Choi, Applied Physics Letters, 84(10):1647-1649 (March 8, 2004). [
Abstract ]
·
Yonsei University (South Korea) / Ajou University (South Korea) / Korea University of Technology (South Korea): "Warm-White-Light Emitting Diode Utilizing a Single-Phase Full-Color Ba3mgsi2o8 : Eu2+, Mn2+ Phosphor." J. Kim, P. Jeon, J. Choi, H. Park, S. Mho, and G. Kim, Applied Physics Letters, 84(15):2931-2933 (April 12, 2004). [
Abstract ]
·
Zhongshan University (China): "Tailored photoluminescence of YAG : Ce phosphor through various methods." Y.X. Pan, M.M. Wu, and Q. Su, Journal of Physics and Chemistry of Solids, 65(5):845-850 (May, 2004). [
Abstract ]
D. Other LED Lighting
·
Bandwidth9: "Long wavelength-tunable VCSELs with optimized MEMS bridge tuning structure." D.C. Sun, W.J. Fan, P. Kner, J. Boucart, T. Kageyama, D.X. Zhang, R. Pathak, R.F. Nabiev et al , IEEE Photonics Technology Letters, 16(3):714-716 (March, 2004). [
Abstract ]
·
Dow Chemical: "Recent development of polyfluorene-based RGB materials for light emitting diodes." W.S. Wu, M. Inbasekaran, M. Hudack, D. Welsh, W.L. Yu, Y. Cheng, C. Wang, S. Kram et al , Microelectronics Journal, 35(4):343-348 (April, 2004). [
Abstract ]
·
Free University of Brussels (Belgium) / University of Ulm (Germany) / Institute for Solid State Physics (Bulgaria): "Polarization Switching Induced by Phase Change in Extremely Short External Cavity Vertical-Cavity Surface-Emitting Lasers." K. Panajotov, M. Arizaleta, M. Camarena, H. Thienpont, H. Unold, J. Ostermann, and R. Michalzik, Applied Physics Letters, 84(15):2763-2765 (April 12, 2004). [
Abstract ]
·
Institut für Ionenstrahlphysik und Materialforschung (Germany): "Light-emitting silicon pn diodes." T. Dekorsy, J.M. Sun, W. Skorupa, B. Schmidt, and M. Helm, Applied Physics A-Materials Science & Processing, 78(4):471-475 (March, 2004). [
Abstract ]
·
Jilin University (China): "Effects of ZnO buffer layer thickness on properties of ZnO thin films deposited by low-pressure MOCVD." Y.T. Zhang, G.T. Du, B.Y. Liu, H.C. Zhu, T.P. Yang, W.C. Li, D.L. Liu, and S.R. Yang, Journal of Crystal Growth, 262(1-4):456-460 (February 15, 2004). [
Abstract ]
·
Jilin University (China): "High-efficiency white organic light-emitting devices based on multiple quantum-well structure." Y. Duan, J.Y. Hou, Z.J. Wu, G. Cheng, Y. Zhao, and S.Y. Liu, Chinese Physics Letters, 21(3):534-536 (March, 2004). [
Abstract ]
·
Korea Advanced Institute for Science and Technology (South Korea): "Polymer/Gold nanoparticle nanocomposite light-emitting diodes: Enhancement of electroluminescence stability and quantum efficiency of blue-light-emitting polymers." J.H. Park, Y.T. Lim, O.O. Park, J.K. Kim, J.W. Yu, and Y.C. Kim, Chemistry of Materials, 16(4):688-692 (February 24, 2004). [
Abstract ]
·
Nanyang Technological University (Singapore): "Growth characteristic and room-temperature lasing in GaInNAs quantum dots grown by solid-source molecular beam epitaxy." Z.Z. Sun, S.F. Yoon, K.C. Yew, and B.X. Bo, Journal of Crystal Growth, 263(1-4):99-104 ( March 1, 2004). [
Abstract ]
·
National Research Council (Canada): "Pure Deep Blue Light-Emitting Diodes From Alternating Fluorene/Carbazole Copolymers by Using Suitable Hole-Blocking Materials." J. Lu, Y. Tao, M. D'iorio, Y. Li, J. Ding, and M. Day, Macromolecules, 37(7):2442-2449 (April 6, 2004). [
Abstract ]
·
National Sun Yat Sen University (Taiwan) / US Air Force Research Laboratory / Universal Technology Corp.: "Tunable and white light-emitting diodes of monolayer fluorinated benzoxazole graft copolymers." S.J. Bai, C.C. Wu, T.D. Dang, F.E. Arnold, and B. Sakaran, Applied Physics Letters, 84(10):1656-1658 (March 8, 2004). [
Abstract ]
·
OptiComp / Sandia National Laboratories / University of Illinois: " Development of Bottom-Emitting 1300-Nm Vertical-Cavity Surface-Emitting Lasers." D. Louderback, M. Fish, J. Klem, D. Serkland, K. Choquette, G. Pickrell, R. Stone, and P. Guilfoyle, IEEE PhotonicsTechnology Letters, 16(4):963-965 (April, 2004). [
Abstract ]
·
Polish Academy of Sciences (Poland) / Uzhgorod National University (Ukraine) / Warsaw University of Technology (Poland): "A pressure-tuned blue-violet InGaN/GaN laser diode grown on bulk GaN crystal." T. Suski, G. Franssen, P. Perlin, R. Bohdan, A. Bercha, P. Adamiec, F. Dybala, W. Trzeciakowski et al , Applied Physics Letters, 84(8):1236-1238 (February 23, 2004). [
Abstract ]
·
Russian Academy of Sciences (Russia) / University of Gottingen (Germany): "Room-temperature silicon light-emitting diodes based on dislocation luminescence." V. Kveder, M. Badylevich, E. Steinman, A. Izotov, M. Seibt, and W. Schroter, Applied Physics Letters, 84(12):2106-2108 (March 22, 2004). [
Abstract ]
·
Sumitomo Electrical Industrial Co. Ltd. (Japan): "Degradation mechanism limiting the lifetime of ZnSe-based white light-emitting diodes." K. Katayama and T. Nakamura, Journal of Applied Physics, 95(7):3576-3581 (April 1, 2004). [
Abstract ]
·
Swiss Federal Institute of Technology Lausanne EPFL (Switzerland): "Electroluminescence from a single pyramidal quantum dot in a light-emitting diode." M.H. Baier, C. Constantin, E. Pelucchi, and E. Kapon, Applied Physics Letters, 84(11):1967-1969 (March 15, 2004). [
Abstract ]
·
Tottori University (Japan): "Slow mode degradation mechanism of ZnSe based white LEDs." M. Adachi, K. Ando, T. Abe, S. Tsutsumi, N. Inoue, I. Kasada, K. Katayama, and T. Nakamura, Physica Status Solidi B-Basic Research, 241(3):751-758 (March, 2004). [
Abstract ]
·
Troitsk Institute of Innovative and Thermonuclear Research TRINITI (Russia) / University of Wisconsin: "Modeling of and experimentation on vertical cavity surface emitting laser arrays." N.N. Elkin, A.P. Napartovich, D.V. Vysotsky, V.N. Troshchieva, L. Bao, N.H. Kim, and L.J. Mawst, Laser Physics, 14(3):378-389 (March, 2004). [
Abstract ]
·
Universidad Nacional de Mar del Plata (Argentina) / University of Milan (Italy): "Electrically driven light emission from an array of Si nanoclusters." K.I. Mazzitello, H.O. Martin, C.M. Aldao, and H.E. Roman, Journal of Physics D-Applied Physics, 37(5):668-673 (March 7, 2004). [
Abstract ]
·
University of Dayton / Sandia National Laboratories: "Enhancement of lateral mode discrimination in broad-area VCSELs using curved Bragg mirrors." A.M. Sarangan and G.M. Peake, Journal of Lightwave Technology, 22(2):543-549 (February, 2004). [
Abstract ]
·
University of Florida / Seoul National University (South Korea) / US Army Research Office / Linkoping University (Sweden): "Wide bandgap GaN-based semiconductors for spintronics." S.J. Pearton, C.R. Abernathy, G.T. Thaler, R.M. Frazier, D.P. Norton, F. Ren, Y.D. Park, J.M. Zavada et al , Journal of Physics - Condensed Matter, 16(7):R209-R245 (February 25, 2004). [
Abstract ]
·
University of St. Andrews (UK): "Optical trapping and fluorescence excitation with violet diode lasers and extended cavity surface emitting lasers." T.K. Lake, A.E. Carruthers, L. Paterson, M. Taylor, F. Gunn-Moore, J.W. Allen, W. Sibbett, and K. Dholakia, Optics Express, 12(4):670-678 (February 23, 2004). [
Abstract ]
·
Wright State University / US Air Force Research Laboratory: "P-type doping and devices based on ZnO." D.C. Look and B. Claftin, Physica Status Solidi B-Basic Research, 241(3):624-630 (March, 2004). [
Abstract ]
E. Review Articles
·
Xerox Corp. / University of Paderborn (Germany): "First-Principles Calculations for Defects and Impurities: Applications to III-Nitrides." C. Van de Walle and J. Neugebauer, Journal of Applied Physics, 95(8):3851-3879 (April 15, 2004). [
Abstract ]
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The information presented in this section has been developed by
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Point of Contact: Jeff Tsao |
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