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ISSUE 21: SCIENTIFIC LITERATURE (Mid-December 2003 - Early February 2004) |
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From the Technical Literature The material in this section is selected from scientific and technical papers that became available during the reporting time period. Links to online abstracts are provided. Most online abstracts are freely accessible to the public. A few require journal subscriptions or memberships, and are noted as such. The technical literature section is roughly organized by subject area and, within subjects, alphabetically by institution of the lead author. Use the links below to go directly to a section. A. Materials and Device Fabrication B. Materials and Device Design Properties A. Materials and Device Fabrication
· AF Ioffe Physicotechnical Institute-Russian Academy of Sciences (Russia) / Institute of Microelectronics Technology (Russia) / AA Baikov Metallurgy Institute (Russia): "Peculiarities of extended defect system in III-nitrides with different degrees of order of mosaic structure." A.V. Ankudinov, A.I. Besyulkin, A.G. Kolmakov, W.V. Lundin, V.V. Ratnikov, N.M. Shmidt, A.A. Sitnikova, A.N. Titkov et al, Physica B-Condensed Matter, 340:462-465 (December 31, 2003). [ Abstract ] · Anna University (India): "On the chloride vapor-phase epitaxy growth of GaN and its characterization." E. Varadarajan, P. Puviarasu, J. Kumar, and R. Dhanasekaran, Journal of Crystal Growth, 260(1-2):43-49 (January 2, 2004). [ Abstract ] · Arizona State University: "Reduction of threading dislocations in GaN layers using in situ deposited silicon nitride masks on AlN and GaN nucleation layers." X.L. Fang, Y.Q. Wang, H. Meidia, and S. Mahajan, Applied Physics Letters, 84(4):484-486 (January 26, 2004). [ Abstract ] · Bell Laboratories: "Patterning GaN microstructures by polarity-selective chemical etching." H.M. Ng, W. Parz, N.G. Weimann, and A. Chowdhury, Japanese Journal of Applied Physics Part 2-Letters, 42(12a):L1405-L1407 (December 1, 2003). [ Abstract ] · CEAGrenoble (France): "Plastic strain relaxation of nitride heterostructures." E. Bellet-Amalric, C. Adelmann, E. Sarigiannidou, J.L. Rouviere, G. Feuillet, E. Monroy, and B. Daudin , Journal of Applied Physics, 95(3):1127-1133 ( February 1, 2004). [ Abstract ] · CEA Grenoble (France) / University of Grenoble (France) / NGK Insulators Ltd. (Japan): "GaN quantum dots doped with Eu." Y. Hori, X. Biquard, E. Monroy, D. Jalabert, F. Enjalbert, L.S. Dang, M. Tanaka, O. Oda et al, Applied Physics Letters, 84(2):206-208 (January 12, 2004). [ Abstract ] · Centre for Materials Information Technology (India) / Korea Research Institute of Standards and Science (South Korea) / Chungbuk Natl University (South Korea) / Yonsei University (South Korea): "Growth of good quality InGaN multiple quantum wells by MOCVD." A.K. Viswanath, J.I. Lee, S.T. Kim, and D. Kim, Journal ofCrystal Growth, 260(3-4):322-326 (January 9, 2004). [ Abstract ] · Chalmers University of Technology (Sweden) / Gothenburg University (Sweden) / Paul Drude Institut fur Festkorperelekt (Germany): "Arsenic incorporation and its influence on microstructure of wurtzite GaN grown bymolecular-beam epitaxy." H.J. Kim, T.G. Andersson, J.M. Chauveau, and A. Trampert, Journal of Applied Physics, 94(11):7193-7200 (December 1, 2003). [ Abstract ] · ChineseAcademy of Sciences (China): "Effect of the N/Al ratio of AlN buffer on the crystal properties and stress state of GaN film grown on Si(111) substrate." M. Wu, B.S. Zhang, J. Chen, J.P. Liu, X.M. Shen, D.G. Zhao, J.C. Zhang, J.F. Wang et al , Journal of Crystal Growth, 260(3-4):331-335 (January 9, 2004). [ Abstract ] · Chinese Academy of Sciences (China): "Structural and optical properties of quaternary AlInGaN epilayers grown by MOCVD with various TMGa flows." J.P. Liu, B.S. Zhang, M. Wu, D.B. Li, J.C. Zhang , R.Q. Jin, J.J. Zhu, J. Chen et al , Journal of Crystal Growth, 260(3-4):388-393 (January 9, 2004). [ Abstract ] · CNRS (France) / CNRST (Morocco) / Lumilog (France): "Atomic structure of pyramidal defects in Mg-doped GaN." P. Vennegues, M. Leroux, S. Dalmasso, M. Benaissa, P. De Mierry, P. Lorenzini, B. Damilano, B. Beaumont et al, Physical Review B, 68(23):235214 (December, 2003). [ Abstract ] · Dong A University (South Korea) / Korea Advanced Institute of Science & Technology (South Korea) / Inje University (South Korea): "Strain relaxation behavior of the InGaN/GaN multiple quantum wells observed by transmission electron microscopy." H.K. Cho, J.Y. Lee, and J.Y. Leem, Applied Surface Science, 221(1-4):288-292 (January 15, 2004). [ Abstract ] · Feng Chia University (Taiwan): "Deposition of GaN films on (111)Si substrates by alternate supply of TMG and NH3." J.R. Gong, M.F. Yeh, and Y.L. Tsai, Optical Materials, 24(4):615-619 (January, 2004). [ Abstract ] · Feng Chia University (Taiwan) / National Taiwan Ocean University (Taiwan): "Behaviors of AlxGa1-xN (0.5 <= x <= 1.0)/GaN short period strained-layer superlattices on the threading dislocation density reduction in GaN films." J.R. Gong, C.W. Huang, S.F. Tseng, T.Y. Lin, K.M. Lin, W.T. Liao, Y.L. Tsai, B.H. Shi et al, Journal of Crystal Growth, 260(1-2):73-78 (January 2, 2004). [ Abstract ] · Fukui University (Japan) / Create Fukui JST (Japan) / AF Ioffe Physicotechnical Institute-Russian Academy of Sciences (Russia): "Single-crystalline InN films with an absorption edge between 0.7 and 2 eV grown using different techniques and evidence of the actual band gap energy." A.G. Bhuiyan, K. Sugita, K. Kasashima, A. Hashimoto, A. Yamamoto, and V.Y. Davydov, Applied Physics Letters, 83(23):4788-4790 (December 8,2003). [ Abstract ] · Fukui University (Japan) / JST (Japan): "Growth and characterization of epitaxial InN films on sapphire substrate using an ArF excimer laser-assisted metalorganic vapor-phase epitaxy (LA-MOVPE)." A.G. Bhuiyan, T. Tanaka, K. Kasashima, A. Hashimoto, and A. Yamamoto, Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, 42(12):7284-7289 (December, 2003). [ Abstract ] · Hantech Co. Ltd (South Korea) / Chungnam National University (South Korea): "Excimer laser annealing with a line beam for improvement of structural and optical properties of polycrystalline GaN." D.J. Kim, S.E. Park, H.J. Kim, J.K. Ryu, B. O, and S.S. Pak, Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, 42(12):7349-7353 (December, 2003). [ Abstract ] · Helsinki University of Technology (Finland): "Morphology of ultra-thin cubic GaN layers on GaAs(100) grown by MOVPE with DMHy as nitrogen source." J. Sormunen, J. Toivonen, M. Sopanen, and H. Lipsanen, Applied Surface Science, 222(1-4):286292 (January 30, 2004). [ Abstract ] · Howard University / University of Maryland / NASA-Goddard Space Flight Center / Air Force Office of Scientific Research: "Systematic study of effects of growth conditions on the (nano-, meso-, micro)size and (one-, two-, three-dimensional) shape of GaN single crystals grown by a direct reaction of Ga with ammonia." A.M.S. Elahl, M.Q. He, P.Z. Zhou, G.L. Harris, L. Salamanca-Riba, F. Felt, H.C. Shaw, A. Sharma et al , Journal of Applied Physics, 94(12):7749-7756 (December 15, 2003). [ Abstract ] · Ismra University Caen (France) / Katholieke University of Leuven (Belgium): "Microstructural and electrical characterization of Er and Eu implanted gallium nitride." T. Wojtowicz, V. Matias, P. Marie, M. Mamor, B. Pipeleers, P. Ruterana, and A. Vantomme, Materials Science and Engineering B-Solid State Materials for Advanced Technology, 105(1-3):121-124 (December 15, 2003). [ Abstract ] · ITN (Portugal) / CFNUL (Portugal) / University of Aveiro (Portugal) / University of Strathclyde (UK) / HISKP (Germany): "Implantation and annealing studies of Tm-implanted GaN." K. Lorenz, E. Alves, U. Wahl, T. Monteiro, S. Dalmasso, R.W. Martin, K.P. O'donnell, and R. Vianden, Materials Science and Engineering B-Solid State Materials for Advanced Technology, 105(1-3):96-99 (December 15, 2003). [ Abstract ] · Lawrence Berkeley National Laboratory / Oriol Inc.: "Growth and characterization of InxGa1-xN MQW using a novel method of temperature gradient OMVPE." M.C. Johnson, R.J. Jorgenson, J. Wu, W. Shan, and E. Bourret-Courchesne, Journal of Crystal Growth, 261(1):44-49 (January 15, 2004). [ Abstract ] · Linkoping University (Sweden) / Meijo University (Japan): "Growth-induced defects in AlN/GaN superlattices with different periods." E. Valcheva, T. Paskova, G.Z. Radnoczi, L. Hultman, B. Monemar, H. Amano, and I. Akasaki, Physica B-Condensed Matter, 340:1129-1132 (December 31, 2003). [ Abstract ] · Max Planck Institute of Coal Research (Germany): "Crystal growth in supercritical ammonia using high surface area silicon nitride feedstock." S. Kaskel, M. Khanna, B. Zibrowius, H.W. Schmidt, and D. Ullner, Journal of Crystal Growth, 261(1):99-104 (January 15, 2004). [ Abstract ] · Nagoya Institute of Technology (Japan): "Growth and characterization of high-quality quaternary AlInGaN epilayers on sapphire." Y. Liu, T. Egawa, H. Ishikawa, and T. Jimbo, Journal of Crystal Growth, 259(3):245-251 (December, 2003). [ Abstract ] · Nagoya University (Japan): "Transmission electron microscopy study of an AlN nucleation layer for the growth of GaN on a 7-degree off-oriented 001)Si substrate by metalorganic vapor phase epitaxy." S. Tanaka, Y. Honda, N. Kameshiro, R. Iwasaki, N. Sawaki, T. Tanji, and M. Ichihashi, Journal of Crystal Growth, 260(3-4):360365 (January 9, 2004). [ Abstract ] · National Cheng Kung University (Taiwan) / Industrial Technology Research Institute (Taiwan): "The growth mechanism of GaN grown by hydride vapor phase epitaxy in N-2 and H-2 carrier gas." H.P. Liu, J.D. Tsay, W.Y. Liu, Y.D. Guo, J.T. Hsu, and I.G. Chen, Journal of Crystal Growth, 260(1-2):79-84 (January 2, 2004). [ Abstract ] · National Cheng Kung University (Taiwan) / National Central University (Taiwan) / South Epitaxy Corp (Taiwan): "Nitride-based near-ultraviolet LEDs with an ITO transparent contact." C.H. Kuo , S.J. Chang, Y. Su, R.W. Chuang, C.S. Chang, L.W. Wu, W.C. Lai, J.F. Chen et al , Materials Science and Engineering B-Solid State Materials for Advanced Technology, 106(1):69-72 (January 15, 2004). [ Abstract ] · National Renewable Energy Laboratory: "Unintentional carbon and hydrogen incorporation in GaNP grown by metal-organic chemical vapor deposition." J.F. Geisz, R.C. Reedy, B.M. Keyes, and W.K. Metzger, Journal of Crystal Growth, 259(3):223-231 (December, 2003). [ Abstract ] · National Sun Yat Sen University (Taiwan): "Effect of N to Ga flux ratio on the GaN surface morphologies grown at high temperature by plasma-assisted molecular-beam epitaxy." J.K. Tsai, I. Lo, K.L. Chuang, L.W. Tu, J.H. Huang, C.H. Hsieh, and K.Y. Hsieh, Journal of Applied Physics, 95(2):460-465 (January 15, 2004). [ Abstract ] · National Tsing Hua University (Taiwan): "Heteroepitaxy of GaN on Si(111) realized with a coincident-interface AlN/beta-Si3N4(0001) double-buffer structure." C.L. Wu, J.C. Wang, M.H. Chan, T.T. Chen, and S. Gwo, Applied Physics Letters, 83(22):4530-4532 (December 1, 2003). [ Abstract ] · Ohio State University / University of California-Santa Barbara: "Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition." A. Armstrong, A.R. Arehart, B. Moran, S.P. Denbaars, U.K. Mishra, J.S. Speck, and S.A. Ringel, Applied Physics Letters, 84(3):374-376 (January 19, 2004). [ Abstract ] · Paul Drude Institut fur Festkorperelekt (Germany): "In surface segregation in M-plane (In,Ga)N/GaN multiple quantum well structures." Y.J. Sun, O. Brandt, B. Jenichen, and K.H. Ploog, Applied Physics Letters, 83(25):5178-5180 (December 22, 2003). [ Abstract ] · Russian Academy of Sciences (Russia) / Moscow State University (Russia) / Moscow MV Lomonosov State University (Russia): "n-ZnO/p-GaN/alpha-Al2O3 heterojunction as a promising blue light emitting system." B.M. Ataev, Y.I. Alivov, V.A. Nikitenko, M.V. Chukichev, V.V. Mamedov, and S.S. Makhmudov, Journal of Optoelectronics and Advanced Materials, 5(4):899-902 (December, 2003). [Abstract not available ] · Sandia National Laboratories: "Plan-view image contrast of dislocations in GaN." D.M. Follstaedt, N.A. Missert, D.D. Koleske, C.C. Mitchell, and K.C. Cross, Applied Physics Letters, 83(23):4797-4799 (December 8, 2003). [ Abstract ] · Sandia National Laboratories: "Scaling relationships for analyzing kinetics in GaN epitaxial lateral overgrowth." M.E. Coltrin and C.C. Mitchell, Journal of Crystal Growth, 261(1):30-37 (January 15, 2004). [ Abstract ] · Shanghai Jiao Tong Univeristy (China) / Saga University (Japan): " Temperature effects on opticalproperties of InN thin films." L.F. Jiang, W.Z. Shen, H.F. Yang, H. Ogawa, and Q.X. Guo, Applied Physics AMaterials Science & Processing, 78(1):89-93 (January, 2004). [ Abstract ] · Shanghai Jiao Tong University (China): "Coherent growth and mechanical properties of AlN/VN multilayers." G.Y. Li, J.J. Lao, J.W. Tian, Z.H. Han, and M.Y. Gu, Journal of Applied Physics, 95(1):92-96 (January 1, 2004). [ Abstract ] · Sichuan University (China) / Chinese Academy of Sciences (China): "Influence of growth pressure of a GaN buffer layer on the properties of MOCVD GaN." J. Chen, S.M. Zhang, B.S. Zhang, J.J. Zhu, G. Feng, L.H. Duan, Y.T. Wang, H. Yang et al , Science in China Series E-Technological Sciences, 46(6):620-626 (December, 2003). [ Abstract ] · Tokyo Institute of Technology (Japan) / Yokohama National University (Japan): "Single crystalline AlN film formed by direct nitridation of sapphire using aluminum oxynitride buffer." W. Nakao and H. Fukuyama, Journal of Crystal Growth, 259(3):302-308 (December, 2003). [ Abstract ] · UNIPRESS (Poland) / CNRS (France) / University of Valenciennes & Hainaut Cambresis (France): "Realization of waveguiding epitaxial GaN layers on Si by low-pressure metalorganic vapor phase epitaxy." H.P.D. Schenk, E. Feltin, M. Laugt, O. Tottereau, P. Vennegues, and E. Dogheche, Applied Physics Letters, 83(25):51395141 (December 22, 2003). [ Abstract ] · University of California Irvine / AXT Optoelectronics: "Efficiency enhancement of InGaN/GaN light-emitting diodes with a back-surface distributed Bragg reflector." Y.S. Zhao, D.L. Hibbard, H.P. Lee, K. Ma, W. So, and H. Liu, Journal of Electronic Materials, 32(12):1523-1526 (December, 2003). [ Scroll to Abstract ] · University of California-Santa Barbara: "GaN quantum dot density control by rf-plasma molecular beam epitaxy." J. Brown, F. Wu, P.M. Petroff, and J.S. Speck, Applied Physics Letters, 84(5):690-692 (February 2, 2004). [ Abstract ] · University of Canterbury (New Zealand): "Photoconductivity spectra from n-doped GaN: evidence for two distinct types of donors ." F. Khan, S.A. Brown, A. Liu, S. Gourley, V. Christie, O. Dickie, and R.J. Reeves, Solid-State Electronics, 48(3):373-377 (March, 2004). [ Abstract ] · University of Clermont Ferrand (France): "Temperature influence on the growth of gallium nitride by HVPE in a mixed H-2/N-2 carrier gas." A. Trassoudaine, R. Cadoret, and E. Gil-Lafon, Journal of Crystal Growth, 260(1-2):7-12 (January 2, 2004). [ Abstract ] · University of Coimbra (Portugal) / University of Lyon (France): "The influence of erbium doping of Al-N sputtered coatings on their optical properties." J.C. Oliveira, A. Cavaleiro, M.T. Vieira, L. Bigot, C. Garapon, J. Mugnier, and B. Jacquier, Thin Solid Films, 446(2):264-270 (January 15, 2004). [ Abstract ] · University of Florida: "Wurtzite to zinc-blende phase transition in gallium nitride thin films." J.H. Kim and P.H. Holloway, Applied Physics Letters,84(5):711-713 (February 2, 2004). [ Abstract ] · University of Grenoble (France) / CEA Grenoble (France) / University of Tsukuba (Japan): "Strong influence of Ga/N flux ratio on Mn incorporation into Ga1-xMnxN epilayers grown by plasma-assisted molecular beam epitaxy." S. Kuroda, E. Bellet-Amalric, R. Giraud, S. Marcet, J. Cibert, and H. Mariette, Applied Physics Letters, 83(22):4580-4582 (December 1, 2003). [ Abstract ] · University of Hong Kong (China) / City University of Hong Kong (China) / Chinese Academy of Sciences (China): "InN island shape and its dependence on growth condition of molecular-beam epitaxy." Y.G. Cao, M.H. Xie, Y. Liu, Y.F. Ng, H.S. Wu, and S.Y. Tong, Applied Physics Letters, 83(25):5157-5159 (December 22, 2003).[ Abstract ] · University of Houston: "In situ determination of surface composition, polarity, crystallographic relationship, and periodicity of GaN films by mass spectroscopy of recoiled Ions and direct recoiled spectroscopy." L.A. Carreno, C. Boney, and A. Bensaoula, Journal of Applied Physics, 94(12):7883-7887 (December 15, 2003). [ Abstract ] · University of Illinois: "Morphology evolution and luminescence properties of porous GaN generated via Pt-assisted electroless etching of hydride vapor phase epitaxy GaN on sapphire." D.J. Diaz, T.L. Williamson, I. Adesida, P.W. Bohn, and R.J. Molnar, Journal of Applied Physics, 94(12):7526-7534 (December 15, 2003). [ Abstract ] · University of Modena & Reggio Emilia (Italy): "Surface effects in GaN growth." C.A. Pignedoli, R. Di Felice, and C.M. Bertoni, Surface Science, 547(1-2):63-70 (December 10, 2003). [ Abstract ] · University of New Mexico / Army Research Laboratory: "Defect reduction mechanisms in the nanoheteroepitaxy of GaN on SiC." X.Y. Sun, R. Bommena, D. Burckel, A. Frauenglass, M.N. Fairchild, S.R.J. Brueck, G.A. Garrett, M. Wraback et al, Journal of Applied Physics, 95(3):1450-1454 (February 1, 2004). [ Abstract ] · University of Pretoria (South Africa): "Electrical defects introduced during high-temperature irradiation of GaN and AlGaN." M. Hayes, F.D. Auret, L. Wu, W.E. Meyer, J.M. Nel, and M.J. Legodi, Physica B-Condensed Matter, 340:421-425 (December 31, 2003). [ Abstract ] · University of Pretoria (South Africa) / UMIST (UK): "Bias-dependent deep level in HVPE n-GaN." L. Wu, W.E. Meyer, F.D. Auret, and M. Hayes, Physica B-Condensed Matter, 340:475-478 (December 31, 2003). [ Abstract ] · US Army Reserch Office / Kansas State University / SVT Associates Inc / Hampton University / US Army TACOM ARDEC: "Synthesis and optical characterization of erbium-doped III-N double heterostructures." J.M. Zavada, J.Y. Lin, H.X. Jiang, P. Chow, B. Hertog, U. Hommerich, E.E. Nyein, and H.A. Jenkinson, Materials Science and Engineering B-Solid State Materials for Advanced Technology, 105(1-3):117-120 (December 15, 2003). [ Abstract ] · Warsaw University of Technology (Poland) / Warsaw University (Poland): "Synthesis of bulk Ga1-xMnxN: A prospective spintronic material." S. Podsiadlo, T. Szyszko, W. Gebicki, J. Gosk, R. Bacewicz, L. Dobrzycki, K. Wozniak, M. Zajac et al, Chemistry of Materials, 15(24):4533-4535 (December 2, 2003). [ Abstract ] · Waseda University (Japan) / National Cheng Kung University (Taiwan): "Growth of Be-doped p-type GaN under invariant polarity conditions." S. Sugita, Y. Watari, G. Yoshizawa, J. Sodesawa, H. Yamamizu, K.T. Liu, Y.K. Su, and Y. Horikoshi, Japanese Journal of AppliedPhysics Part 1-Regular Papers Short Notes & Review Papers, 42(12):7194-7197 (December, 2003). [ Abstract ] B. Materials and Device Design Properties · Arizona State University: "Determination of In concentration in pseudomorphic InxGa1-xN quantum wells based on convergent-beam electron diffraction." J.N. Stirman, M. Takeguchi, M.R. Mccartney , and D.J. Smith, Applied Physics Letters, 84(4):490-492 (January 26, 2004). [ Abstract ] · Arizona State University: "Slip systems and misfit dislocations in InGaN epilayers." S. Srinivasan, L. Geng, R. Liu, F.A. Ponce, Y. Narukawa, and S. Tanaka, Applied Physics Letters, 83(25):5187-5189 (December 22, 2003). [ Abstract ] · Bede Scientific Instruments Ltd (UK) / University of Sheffield (UK) / University of Durham (UK): "Influence of alloy composition and interlayer thickness on twist and tilt mosaic in AlxGa1-xN/AlN/GaN heterostructures." T.A. Lafford, P.J. Parbrook, and B.K. Tanner, Applied Physics Letters, 83(26):5434-5436 (December 29, 2003). [ Abstract ] · Brown University / Yale University: "Optically pumped ultraviolet AlGaInN quantum well laser at 340 nm wavelength." Y. He, Y.K. Song, A.V. Nurmikko, J. Su, M. Gherasimova, G. Cui, and J. Han, Applied Physics Letters, 84(4):463-465(January 26, 2004). [ Abstract ] · Chinese Academy of Sciences (China) / Hong Kong University of Science & Technology (China): "Photoluminescence study of InGaN/GaN quantum dots grown on passivated GaN surface." J.S. Huang, Z. Chen, X.D. Luo, Z.Y. Xu, and W.K. Ge, Journal of Crystal Growth, 260(1-2):13-17 (January 2, 2004). [ Abstract ] · Chonbuk National University (South Korea): "Effects of a highly Si-doped GaN current spreading layer at the n(+) GaN/multi-quantum-well interface on InGaN/GaN blue-light-emitting diodes." C.S. Kim, H.K. Cho, R.J. Choi, Y.B. Hahn, H.J. Lee, and C.H. Hong, Journal of the Korean Physical Society, 44(1):133-136 (January, 2004). [Abstract not available ] · Chonbuk National University (South Korea) / Chosun University (South Korea) / Samsung Advanced Institute of Technology (South Korea): "Correlations between photoluminescence, and Hall mobility in GaN/sapphire grown by metalorganic chemical vapor deposition." I.H. Lee, C.R. Lee, D.C. Shin, O. Nam, and Y. Park, Journal of Crystal Growth, 260(3-4):304-308 (January 9, 2004). [ Abstract ] · Chungbuk National University (South Korea): "Carrier dynamics of high-efficiency green light emission in graded-indium-content InGaN/GaN quantum wells: An important role of effective carrier transfer." Y.P. Sun, Y.H. Cho, E.K. Suh, H.J. Lee, R.J. Choi, and Y.B. Hahn, Applied Physics Letters, 84(1):49-51 (January 5,2004). [ Abstract ] · CNRS (France): "Blue resonant cavity light emitting diodes with a high-Al-content GaN/AlGaN distributed Bragg reflector." D. Byrne, F. Natali, B. Damilano, A. Dussaigne, N. Grandjean, and J. Massies, Japanese Journal of Applied Physics Part 2-Letters, 42(12b):L1509-L1511 (December 15, 2003). [ Abstract ] · CNRS (France) / US Army Research Office / University of Cincinnati: "New spectroscopic data of erbium ions in GaN thin films." F. Pelle, F. Auzel, J.M. Zavada, D.S. Lee, and A.J. Steckl, Materials Science and Engineering B-Solid State Materials for Advanced Technology, 105(1-3):126-131 (December 15, 2003). [ Abstract ] · Dogguk University (South Korea) / Yonsei University (South Korea): "Characterization of ferromagnetic Ga1-xMnxN layers grown on sapphire (0001) substrates." I.T. Yoon, C.S. Park, H.J. Kim , Y.G. Kim, T.W. Kang, M.C. Jeong, M.H. Ham, and J.M. Myoung, Journal of Applied Physics, 95(2):591-596 (January 15, 2004). [ Abstract ] · Hampton University / University of Cincinnati / US Army Research Office: "Photoluminescence properties of in situ Tm-doped AlxGa1-xN." U. Hommerich, E.E. Nyein, D.S. Lee, A.J. Steckl, and J.M. Zavada, Applied Physics Letters, 83(22):4556-4558(December 1, 2003). [ Abstract ] · Hampton University / University of Cincinnati / US Army Research Office: "Photoluminescence studies of rare earth (Er, Eu, Tm) in situ doped GaN." U. Hommerich, E.E. Nyein, D.S. Lee, J. Heikenfeld, A.J. Steckl, and J.M. Zavada, Materials Science and Engineering B-Solid State Materials for Advanced Technology, 105(1-3):91-96 (December 15, 2003). [ Abstract ] · Instituto Superior Tecnico (Portugal) / University of Aveiro (Portugal): "Photoluminescence decay in the ps time regime and structural properties of pulsed-laser deposited GaN." P. Sanguino, M. Niehus, L. Melo, R. Schwarz, A. Fedorov, J.M.G. Martinho, M.J. Soares, and T. Monteiro, Physica B-Condensed Matter, 340:457-461 (December 31, 2003). [ Abstract ] · Ismra University Caen (France) / University of Montpellier (France) / University of Strathclyde (UK): "The microstructure of Er MBE doped GaN." T. Wojtowicz, P. Ruterana, N. Rousseau, O. Briot, S. Dalmasso, R.W. Martin, and K.P. O'donnell, Materials Science and Engineering B-Solid State Materials for Advanced Technology, 105(1-3):113-116 (December 15, 2003). [ Abstract ] · Jeonbuk National University (South Korea): "Analysis of Mg-related emissions in p-GaN grown by MOCVD." T.S. Jeong, C.J. Youn, M.S. Han, J.W. Yang, and K.Y. Lim, Journal of Crystal Growth, 259(3):267-272 (December, 2003). [ Abstract ] · Korea Maritime University (South Korea) / Andong National University (South Korea): "Photoluminescence investigation of thick GaN films grown on Si substrates by hydride vapor phase epitaxy." M. Yang, H.S. Ahn, J.H. Chang, S.N. Yi , K.H. Kim, H. Kim, and S.W. Kim, Journal of the Korean Physical Society, 43(6):1087-1090 (December, 2003). [Abstract not available ] · Lawrence Berkeley Laboratory / University of California-Berkeley / Cornell University: "Hydrostatic pressure dependence of the fundamental bandgap of InN and In-rich group III nitride alloys." S.X. Li, J. Wu, E.E. Haller, W. Walukiewicz, W. Shan, H. Lu, and W.J. Schaff, Applied Physics Letters, 83(24):4963-4965 (December15, 2003). [ Abstract ] · Linkoping University (Sweden) / University of California-San Diego: "Identification of Ga interstitials in GaAlNP." I.P. Vorona, N.Q. Thinh, I.A. Buyanova, W.M. Chen, Y.G. Hong, and C.W. Tu, Physica B-Condensed Matter, 340:466-469 (December 31, 2003). [ Abstract ] · Linkoping University (Sweden) / University of California-San Diego: "P-N defect in GaNP studied by optically detected magnetic resonance." W.M. Chen, N.Q. Thinh, I.P. Vorona, I.A. Buyanova, H.P. Xin, and C.W. Tu, Physica B-Condensed Matter, 340:399-402 (December 31, 2003). [ Abstract ] · Lumileds Lighting / Agilent Technologies (Japan) / Yamaguchi University (Japan) / Mitsubishi Cable Industries Ltd (Japan): "Internal quantum efficiency of highly-efficient InxGa1-xN-based near-ultraviolet light-emitting diodes." S. Watanabe, N. Yamada, M. Nagashima, Y. Ueki, C. Sasaki, Y. Yamada, T. Taguchi, K. Tadatomo, H. Okagawa, and H. Kudo, Applied Physics Letters, 83(24):4906-4908 (December 15,2003). [ Abstract ] · Max Plack Intitute of Metals Research (Germany) / ICTP (Italy): "Lattice dynamics behavior in GaN doped with Mg, As, Si, and C ." M.R. Aouas, W. Sekkal , and A. Zaoui, Materials Chemistry and Physics, 83(1):48-53 (January 15, 2004). [ Abstract ] · National Central University (Taiwan) / Saha Institute of Nuclear Physics (India): "Diffusion mechanism and photoluminescence of erbium in GaN." Y.S. Ting, C.C. Chen, C.C. Lee, G.C. Chi, T.K. Chini, P. Chakraborty, H.W. Chuang, J.S. Tsang, C.T. Kuo, W.C. Tsai, S.H. Chen, and J.I. Chyi, Optical Materials, 24(3):515-518 (December, 2003). [ Abstract ] · National Tsing Hua University (Taiwan) / Epitech Technology Corp (Taiwan) / National Cheng Kung University (Taiwan) / Huafan University (Taiwan): "Improved 634 nm MQW AlGaInP LEDs performance with novel tensile strain barrier reducing layer." J.Y. Su, H.C. Wang, W.B. Chen, S.M. Chen, M.C. Wu, H.H. Chen, and Y.K. Su, IEEE Transactions on Electron Devices, 50(12):2388-2392 (December, 2003). [Abstract not available ] · North Carolina State University / US Army Research Office: "Design of white light-emitting diodes using InGaN/AlInGaN quantum-well structures." D. Xiao, K.W. Kim, S.M. Bedair, and J.M. Zavada, Applied Physics Letters, 84(5):672-674 (February 2, 2004). [ Abstract ] · Northern Arizona University: "Boron alloying in GaN." L. Escalanti and G.L.W. Hart, Applied Physics Letters, 84(5):705-707 (February 2, 2004). [ Abstract ] · Osaka Electrocommunications University (Japan) / Nitride Semiconductor Co Ltd (Japan) / University of Tokushima (Japan) / Kyoto University (Japan): "Radiative carrier recombination dependent on temperature and well width of InGaN/GaN single quantum well." A. Sasaki, K. Nishizuka, T. Wang, S. Sakai, A. Kaneta, Y. Kawakami, and S. Fujita, Solid State Communications, 129(1):31-35 (January, 2004). [ Abstract ] · Paul Drude Institut fur Festkorperelek (Germany): "Polarization properties of nonpolar GaN films and (In,Ga)N/GaN multiple quantum wells." H.T. Grahn and K.H. Ploog, Applied Physics A-Materials Science & Processing, 78(4):447-451 (March, 2004). [ Abstract ] · Polish Academy of Sciences (Poland) / University of Copenhagen (Denmark) / Chalmers University of Technology (Sweden): "Electronic structure of GaN(000(1)over-bar)-(1 x 1) surface." B.J. Kowalski, R.J. Iwanowski, J. Sadowski, I.A. Kowalik, J. Kanski, I. Grzegory, and S. Porowski, Surface Science, 548(1-3):220-230 (January 1, 2004). [ Abstract ] · Russian Academy of Sciences (Russia) / AF Ioffe Physicotechnical Institute-Russian Academy of Sciences (Russia): "Correlation of diffusion length and trap concentration with dislocation density in MOCVD-grown GaN." O.A. Soltanovich, E.B. Yakimov, N.M. Shmidt, A.S. Usikov, and W.V. Lundin, Physica B-Condensed Matter, 340:479-483 (December 31, 2003). [ Abstract ] · Technical University of Lodz (Poland) / University of New Mexico: " Cascade nitride VCSEL designs with tunnel junctions." P. Mackowiak, R.P. Sarzala, M. Wasiak, and W. Nakwaski, Applied Physics A-Materials Science & Processing, 78(3):315-322 (February, 2004). [ Abstract ] · University of Estadual Campinas (Brazil) / University of Sao Paulo (Brazil) / University of Paderborn (Germany): "Near band-edge optical properties of cubic GaN with and without carbon doping." J.R.L. Fernandez, F. Cerdeira, E.A. Meneses, Soares Jant, O.C. Noriega, J.R. Leite, D.J. As, U. Kohler, D.G.P. Salazar, D. Schikora, and K. Lischka, Microelectronics Journal , 35(1):73-77 (January, 2004). [ Abstract ] · University of Exeter (UK) / University of Newcastle Upon Tyne (UK): "Ro-vibrational modes of H-2 in 4H-SiC and 2H-GaN." T.A.G. Eberlein, L. Huggett, R. Jones, and P.R. Briddon, Physica B-Condensed Matter, 340:171-174 (December 31, 2003). [ Abstract ] · University of Florida: "Advantages and limitations of MgO as a dielectric for GaN." B.P. Gila, J. Kim, B. Luo, A. Onstine, W. Johnson, F. Ren, C.R. Abernathy, and S.J. Pearton, Solid-State Electronics, 47(12):2139-2142 (December, 2003). [ Abstract ] · University of Konstanz (Germany) / CERN (Switzerland): "Photoluminescence in platinum doped GaN." A. Stotzler and M. Deicher, Physica B-Condensed Matter, 340:377-380 (December 31, 2003). [ Abstract ] · University of Paris (France) / CEA Grenoble (France): "Intersubband spectroscopy of doped and undoped GaN/AlN quantum wells grown by molecular-beam epitaxy." A. Helman, M. Tchernycheva, A. Lusson, E. Warde, F.H. Julien, K. Moumanis, G. Fishman, E. Monroy, B. Daudin, D.L. Dang, E. Bellet-Amalric, and D. Jalabert, Applied Physics Letters, 83(25):5196-5198 (December 22, 2003). [ Abstract ] · University of South Carolina: "Anisotropic structural characteristics of (11(2)over-bar0) GaN templates and coalesced epitaxial lateral overgrown films deposited on (10(1)over-bar2) sapphire." H.M. Wang, C.Q. Chen, Z. Gong, J.P. Zhang, M. Gaevski, M. Su, J.W. Yang, and M.A. Khan, Applied Physics Letters, 84(4):499-501 (January 26, 2004). [ Abstract ] · University of Strathclyde (Scotland): "InGaN microring light-emitting diodes." H.W. Choi, C.W. Jeon, and M.D. Dawson, IEEE Photonics Technology Letters, 16(1):33-35 (January, 2004). [ Abstract ] · University of Strathclyde (UK): "High extraction efficiency InGaN micro-ring light-emitting diodes." H.W. Choi, M.D. Dawson, P.R. Edwards, and R.W. Martin, Applied Physics Letters, 83(22):4483-4485 (December 1, 2003). [ Abstract ] · University of Technology-Sydney (Australia) / Macquarie University (Australia): "A method to improve the light emission efficiency of Mg-doped GaN." O. Gelhausen, M.R. Phillips, and E.M. Goldys, Journal of Physics D-Applied Physics, 36(23):2976-2979 (December 7, 2003). [ Abstract ] · University of Tsukuba (Japan) / RIKEN (Japan) / Tokyo Institute of Technology (Japan) / National Institute for Material Sciences (Japan) / HirosakiUniversity (Japan) / Waseda UNiversity (Japan) / Nichia Corp (Japan): "Influence of internal electric field on the recombination dynamics of localized excitons in an InGaN double-quantum-well laser diode wafer operated at 450 nm." T. Onuma, S.F. Chichibu, T. Aoyama, K. Nakajima, P. Ahmet, T. Azuhata, T. Chikyow, T. Sota , S. Nagahama, and T. Mukai, Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, 42(12):7276-7283 (December, 2003). [ Abstract ] · University of Western Australia: "Optical quenching of photoconductivity in undoped n-GaN." S. Cai, G. Parish, G.A. Umana-Membreno, J.M. Dell, and B.D. Nener, Journal of Applied Physics, 95(3):1081-1088 (February 1, 2004). [ Abstract ] · Unversity of Science & Technology China / National Central University (Taiwan): "Optical properties of ZnO/GaN heterostructure and its near-ultraviolet light-emitting diode." Q.X. Yu, B. Xu, Q.H. Wu, Y. Liao, G.Z. Wang, R.C. Fang, H.Y. Lee, and C.T. Lee, Applied Physics Letters, 83(23):4713-4715 (December 8, 2003). [ Abstract ] · US Army Research Laboratory: "Resistivity control in unintentionally doped GaN films grown by MOCVD." A.E. Wickenden, D.D. Koleske, R.L. Henry, M.E. Twigg, and M. Fatemi, Journal of Crystal Growth, 260(1-2):54-62 (January 2, 2004). [ Abstract ] · Virginia Commonwealth University / CNR (Italy) / Fudan University (China) / Lawrence Berkeley Laboratory: "Photoluminescence from structural defects in GaN." M.A. Reshchikov, J. Jasinski, Z. Liliental-Weber, D. Huang, L. He, P. Visconti, and H. Morkoc, Physica B-Condensed Matter, 340:440-443 (December 31, 2003). [ Abstract ] · Virginia Commonwealth University / TDI Inc / Samsung Advanced Institute of Technology (South Korea) / Quaid I Azam University (Pakistan): "Persistent photoluminescence in high-purity GaN." M.A. Reshchikov, M.Z. Iqbal, S.S. Park, K.Y. Lee, D. Tsvetkov, V. Dmitriev, and H. Morkoc, Physica B-Condensed Matter, 340:444-447 (December 31, 2003). [ Abstract ] · Yokohama National University (Japan): "Efficiency enhancement in a light-emitting diode with a two-dimensional surface grating photonic crystal." H. Ichikawa and T. Baba, Applied Physics Letters, 84(4):457-459 (January 26, 2004). [ Abstract ] · Yonsei University (South Korea) / Korea Research Insitute of Standards & Science (South Korea): "Room-temperature ferromagnetism of Mg and Mn co-doped GaN films grown by PEMBE." M.C. Jeong, M.H. Ham, J.M. Myoung, and S.K. Noh, Applied Surface Science, 222(1-4):322-326 (January 30, 2004). [ Abstract ] · Youngstown State University / Kansas State University: "III-nitride blue and ultraviolet photonic crystal light emitting diodes ." T.N. Oder, K.H. Kim, J.Y. Lin, and H.X. Jiang, Applied Physics Letters, 84(4):466-468 (January 26, 2004). [ Abstract ] C. Packaging and Reliability · National Sun Yat Sen University (China): "Comparative investigation on synthesis and photoluminescence of YAG: Ce phosphor." Y.X. Pan, M.M. Wu, and Q. Su, Materials Science and Engineering B-Solid State Materials for Advanced Technology, 106(3):251-256 (February 15, 2004). [ Issue not yet available ] D. Other LED Lighting · AF Ioffe Physicotechnical Institute-Russian Academy of Sciences (Russia): "Effect of the postimplantation-annealing temperature on the properties of silicon light-emitting diodes fabricated through boron ion implantation into n-Si." N.A. Sobolev, A.M. Emel'yanov, E.I. Shek, and V.I. Vdovin, Physics of the Solid State, 46(1):35-39 (2004). [ Abstract ] · AF Ioffe Physicotechnical Institute-Russian Academy of Sciences (Russia): "Electroluminescence efficiency of silicon diodes." M.S. Bresler, O.B. Gusev, B.P. Zakharchenya, and I.N. Yassievich, Physics of the Solid State, 46(1):5-9 (2004). [ Abstract ] · AF Ioffe Physicotechnical Institute-Russian Academy of Sciences (Russia): "Silicon LEDs emitting in the band-to-band transition region: Effect of temperature and current strength." A.M. Emel'yanov, N.A. Sobolev, and E.I. Shek, Physics of the Solid State, 46(1):40-44 (2004 ). [ Abstract ] · AF Ioffe Physicotechnical Institute-Russian Academy of Sciences (Russia) / Institute for Chemical Problems in Microelectronics (Russia): "Extended structural defects and their influence on the electroluminescence in efficient Si light-emitting diodes." N.A. Sobolev, A.M. Emel'yanov, E.I. Shek, and V.I. Vdovin, Physica B-Condensed Matter, 340:1031-1035 (December 31, 2003). [ Abstract ] · Chinese Academy of Sciences (China) / Beijing University of Science and Technology (China): "Determination of the polarity of ZnO thin films by electron energy-loss spectroscopy." Y. Wang, Q.Y. Xu, X.L. Du, Z.X. Mei, Z.Q. Zeng, Q.K. Xue, and Z. Zhang, Physics Letters a, 320(4):322-326 (January 5, 2004). [ Abstract ] · Forschungszentrum Rossendorf EV (Germany): "Light-emitting silicon pn diodes." T. Dekorsy, J.M. Sun, W. Skorupa, B. Schmidt, and M. Helm, Applied Physics A-Materials Science & Processing, 78(4):471-475 (March, 2004). [ Abstract ] · Iowa State University / DOE Ames Lab: "Combinatorial fabrication and studies of bright white organic light-emitting devices based on emission from rubrene-doped 4,4 '-bis(2,2 '-diphenylvinyl)-1,1 '-biphenyl." G. Li and J. Shinar, Applied Physics Letters, 83(26):5359-5361 (December 29, 2003). [ Abstract ] · Jilin University (China) / Chinese Academy of Sciences (China) / Kwansei Gakuin University (Japan): "A wide-bandgap semiconducting polymer for ultraviolet and blue light emitting diodes." P. Lu, H.Q. Zhang, F.Z. Shen, B. Yang, D. Li, Y.G. Ma, X.F. Chen, J.H. Li, and N. Tamai, Macromolecular Chemistry and Physics, 204(18):2274-2280 (December 8, 2003). [ Abstract ] · Nanjing University (China) / Shandong normal University (China): "Efficient generation of red and blue light in a dual-structure periodically poled LiTaO3 crystal." J.L. He, X.P. Hu, S.N. Zhu, Y.Y. Zhu, and N.B. Min, Chinese Physics Letters, 20(12):2175-2177 (December, 2003). [ Abstract ] · National Institute for Materials Science (Japan) / Tohoku University (Japan) / University of Tsukuba (Japan) / Tokyo Institute of Technology (Japan) / RIKEN (Japan): "V defects of ZnO thin films grown on Si as an ultraviolet optical path." Y.Z. Yoo, T. Sekiguchi, T. Chikyow, M. Kawasaki, T. Onuma, S.F. Chichibu, J.H. Song, and H. Koinuma, Applied Physics Letters, 84(4):502-504 (January 26, 2004). [ Abstract ] · Nihon University (Japan): "UV-laser-light-produced defects and reversible blue-white photoluminescence change in silica." S. Mochizuki and H. Araki, Physica B-Condensed Matter, 340:969-973 (December 31, 2003). [ Abstract ] · Osaka Municipal Technical Research Institute (Japan): "Room-temperature ultraviolet light-emitting zinc oxide micropatterns prepared by low-temperature electrodeposition and photoresist." M. Izaki, S. Watase, and H. Takahashi, Applied Physics Letters, 83(24):4930-4932 (December 15, 2003). [ Abstract ] · Russian Academy of Sciences (Russia) / AF Ioffe Physicotechnical Institute-Russian Academy of Sciences (Russia) / Wright State University / Moscow Mv Lomonosov State University (Russia) / University of Southampton (UK): "Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates." Y.I. Alivov, E.V. Kalinina, A.E. Cherenkov, D.C. Look, B.M. Ataev, A.K. Omaev, M.V. Chukichev, and D.M. Bagnall, Applied Physics Letters, 83(23):4719-4721 (December 8, 2003). [ Abstract ] · Samsung Advanced Institute of Technology (South Korea) / Korea Research Institute of Standards and Science (South Korea) / Korea Institute of Science and Technology (South Korea) / Inha University (South Korea): "Competition between the formation of excimers and excitons during the photoluminescence of light-emitting polymer blends." J.S. Lee, C.H. Kim, J.W. Yu, J.K. Kim, D.Y. Kim, N.W. Song , and C.Y. Kim, Journal of Polymer Science Part a-Polymer Chemistry, 42(3):557-565 (February 1, 2004). [ Abstract ] · STMicroelectronics (Italy): "High efficiency light emitting devices in silicon." M.E. Castagna, S. Coffa, M. Monaco, A. Muscara, L. Caristia, S. Lorenti, and A. Messina, Materials Science and Engineering B-Solid State Materials for Advanced Technology, 105(1-3):82-89 (December 15, 2003 ). [ Abstract ] · University of California Riverside: "Excitonic properties of strained wurtzite and zinc-blende GaN/AlxGa1-xN quantum dots." V.A. Fonoberov and A.A. Balandin, Journal of Applied Physics, 94(11):7178-7186 (December 1, 2003). [ Abstract ] · University of Oxford (UK) / Gatan UK (UK) / MEMC Electronic Materials SpA (Italy): "Near-band gap luminescence at room temperature from dislocations in silicon." D.J. Stowe, S.A. Galloway, S. Senkader, K. Mallik, R.J. Falster, and P.R. Wilshaw, Physica B-Condensed Matter, 340:710-713 (December 31, 2003). [ Abstract ] · University of Science & Technology China: "Growth of ZnO thin films on lattice-matched substrates by pulsed-laser deposition." Q.X. Yu, B. Xu, Q.H. Wu, Y. Liao, G.Z. Wang, and R.C. Fang, Chinese Physics Letters, 20(12):2235-2238 (December, 2003). [ Abstract ] E. Review Articles · Topt Photon AG (Germany): "Violet diode lasers - See broadened application base." G. Flinn, Photonics Spectra, 38(1):114-116 (January, 2004). [ Abstract ] · University of California-Berkeley / Lawrence Berkeley National Laboratory: "Understanding defects in semiconductors as key to advancing device technology." E.R. Weber, Physica B-Condensed Matter, 340:1-14 (December 31, 2003). [ Abstract ] · University of Florida / US Army Research Office / Lehigh University / Center for Strongly Correlated Materials Research (South Korea): "Effects of defects and doping on wide band gap ferromagnetic semiconductors." S.J. Pearton, C.R. Abernathy, G.T. Thaler, R. Frazier, F. Ren, A.F. Hebard, Y.D. Park, D.P. Norton, W. Tang, M. Stavola, J.M. Zavada, and R.G. Wilson, Physica B-Condensed Matter, 340:39-47 (December 31, 2003). [ Abstract ] |
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