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ISSUE 19: SCIENTIFIC LITERATURE (Mid-July - Mid-September 2003) |
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From the Technical Literature The material in this section is selected from scientific and technical papers that became available during the reporting time period. Links to online abstracts are provided. Most online abstracts are freely accessible to the public. A few require journal subscriptions or memberships, and are noted as such. The technical literature section is roughly organized by subject area and, within subjects, alphabetically by institution of the lead author. Use the links below to go directly to a section. A. Materials and Device Fabrication B. Materials and Device Design Properties A. Materials and Device Fabrication
· Arizona State University/ University of Magdeburg (Germany) "Atomic arrangement at the AlN/Si (111) interface." R Liu, FA Ponce, A Dadgar, and A Krost, in APPLIED PHYSICS LETTERS, 83(5):860-862 (2003). [ Abstract] · ATMI Inc. "Fabrication of GaN wafers for electronic and optoelectronic devices." XP Xu , RP Vaudo, and GR Brandes, in OPTICAL MATERIALS, 23(1-2):1-5 (2003). [ Abstract] · Catholic University of Nijmegen (Netherlands)/Polish Academy of Sciences (Poland)/ Fraunhofer Institute for Applied Solid-State Physics (Germany) "Thick GaN layers grown by hydride vapor-phase epitaxy: hetero- versus homo-epitaxy." PR Hageman, V Kirilyuk, WHM Corbeek, JL Weyher, B Lucznik, M Bockowski, S Porowski, and S Muller, in JOURNAL OF CRYSTAL GROWTH, 255(3-4):241-249 (2003). [ Abstract] · Chiba University (Japan) "In situ investigation for polarity-controlled epitaxy processes of GaN and AIN in MBE and MOVPE growth." A Yoshikawa and K Xu, in OPTICAL MATERIALS, 23(1-2):7-14 (2003). [ Abstract] · Chinese Academy of Sciences (China) "Nitridation reaction of aluminum powder in flowing ammonia." Y Qiu and LA Gao, in JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 23(12):2015-2022 (2003). [ Abstract] · Chinese Academy of Sciences (China "Novel synthesis of nanocrystalline gallium nitride powder from gallium(III)-urea complex. " Y Qiu and L Gao, in CHEMISTRY LETTERS, 32(8):774-775 (2003). [ Abstract] · Chinese Academy of Sciences (China) "Novel way to synthesize nanocrystalline aluminum nitride from coarse aluminum powder." Y Qiu and L Gao, in JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 86(7):1214-1216 (2003). [ Abstract] · Chinese Academy of Sciences (China)/ Sichuan University (China) "Influences of reactor pressure of GaN buffer layers on morphological evolution of GaN grown by MOCVD. " J Chen, SM Zhang, BS Zhang, JJ Zhu, XM Shen, G Feng, JP Liu, YT Wang, H Yang, and WC Zheng, in JOURNAL OF CRYSTAL GROWTH, 256(3-4):248-253 (2003). [ Abstract] · Chonbuk National University (South Korea) "Catalytic effect of metal elements on the growth of GaN and Mg-doped GaN micro-crystals." KS Nahm, TY Kim, and SH Lee, in KOREAN JOURNAL OF CHEMICAL ENGINEERING, 20(4):653-658 (2003). [ Abstract] · Chonbuk National University (South Korea) "The influence of AlxGa1-xN intermediate buffer layer on the characteristics of GaN/Si(111) epitaxy." SH Jang, SS Lee, OY Lee, and CR Lee, in JOURNAL OF CRYSTAL GROWTH, 255(3-4):220-226 (2003). [ Abstract] · City University of Hong Kong (China)/ Shanghai Institute of Microsystems & Information Technology (China)/ Academy Sinica (China) "Characteristics and polarization-enhanced model of wurtzite aluminum nitride thin films synthesized on Si(100) substrates by pulsed laser deposition." ZH An, CL Men, J Yu, PK Chu, and CL Lin, in JOURNAL OF APPLIED PHYSICS, 94(3):1934-1940 (2003). [ Abstract] · Cornell University/ University of California-Berkeley/ Technical University of Ilmenau (Germany) "Growth of a-plane InN on r-plane sapphire with a GaN buffer by molecular-beam epitaxy." H Lu, WJ Schaff, LF Eastman, J Wu, W Walukiewicz, V Cimalla, and O Ambacher, in APPLIED PHYSICS LETTERS, 83(6):1136-1138 (2003). [ Abstract] · Ecole Polytechique Federale de Lausanne (Switzerland) "High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN." JF Carlin and M Ilegems, in APPLIED PHYSICS LETTERS, 83(4):668-670 (2003). [ Abstract] · EMCORE Corp. "Morphological evolution of InGaN/GaN quantum-well heterostructures grown by metalorganic chemical vapor deposition." SM Ting, JC Ramer, DI Florescu, VN Merai, BE Albert, A Parekh, DS Lee, D Lu, DV Christini, L Liu, and EA Armour, in JOURNAL OF APPLIED PHYSICS, 94(3):1461-1467 (2003). [ Abstract] · European Synchrotron Radiation Facility (France)/ University of Dortmund (Germany)/ Masaryk University (Czech Republic)/ CEA Grenoble (France) "On the driving forces for the vertical alignment in nitride quantum dot multilayers. " V Chamard, TH Metzger, M Sztucki, V Holy, M Tolan, E Bellet-Amalric, C Adelmann, B Daudin, and H Mariette, in EUROPHYSICS LETTERS, 63(2):268-274 (2003). [ Abstract] · Faculte des Sciences de Monastir (Tunisia)/ University of Kiel (Germany) "GaN growth on porous silicon by MOVPE." T Boufaden, N Chaaben, A Christophersen, and B El Jani, in MICROELECTRONICS JOURNAL, 34(9):843-848 (2003). [ Abstract] · Georgia Institute of Technology "Heat and mass-transfer modeling of an angled gas-jet LCVD system." C Duty, R Johnson, J Gillespie, A Fedorov, and J Lackey, in APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 77(5):697-705 (2003). [ Abstract] · Hokkaido University (Japan)/ Nippon EMC (Japan)/ Mitsubishi Cable Industries Ltd. (Japan) "A UV light-emitting diode incorporating GaN quantum dots." S Tanaka, JS Lee, P Ramvall, and H Okagawa, in JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 42(8A):L885-L887 (2003). [ Abstract] · Industrial Techology Research Institute (Taiwan)/ National Central University (Taiwan)/ National Cheng Kung University (Taiwan) "Improvement of near-ultraviolet InGaN-GaN light-emitting diodes through higher pressure grown underlying GaN layers." RC Tu, CJ Tun, SM Pan, HP Liu, CE Tsai, JK Sheu, CC Chuo , TC Wang, GC Chi, and IG Chen, in IEEE PHOTONICS TECHNOLOGY LETTERS, 15(8):1050-1052 (2003). [Scroll to Abstract] · Institut des Sciences de la Matičre et du Rayonnement (France) "Analysis of the atomic structure of interfaces and defects in wurtzite nitride semiconductors. " P Ruterana and G Nouet, in MATERIALS CHEMISTRY AND PHYSICS, 81(2-3):249-252 (2003). [ Abstract] · Institute of Materials Research & Engineering (Singapore)/ National University of Singapore "Effect of high temperature and interface treatments on photoluminescence from InGaN/GaN multiple quantum wells with green light emissions. " W Liu, SJ Chua, XH Zhang, and J Zhang, in APPLIED PHYSICS LETTERS, 83(5):914-916 (2003). [ Abstract] · Kansas State University "III-nitride photonic crystals." TN Oder, J Shakya, JY Lin, and HX Jiang, in APPLIED PHYSICS LETTERS, 83(6):1231-1233 (2003). [ Abstract] · Kansas State University "III-nitride ultraviolet light-emitting diodes with delta doping. " KH Kim, J Li, SX Jin, JY Lin, and HX Jiang, in APPLIED PHYSICS LETTERS, 83(3):566-568 (2003). [ Abstract] · MIT "Nanocrystalline aluminum nitride: I, vapor-phase synthesis in a forced-flow reactor." ML Panchula and JY Ying, in JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 86(7):1114-1120 (2003). [ Abstract] · MIT "Nanocrystalline aluminum nitride: II, sintering and properties." ML Panchula and JY Ying, in JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 86(7):1121-1127 (2003). [ Abstract] · Nanjing University (China) "Growth and photocurrent property of GaN/anodic alumina/Si." RL Jiang, JZ Wang, P Chen, ZM Zhao, YF Mei, JH Wu, B Shen, R Zhang, SL Gu, XL Wu, and YD Zheng, in OPTICAL MATERIALS, 23(1-2):147-150 (2003). [ Abstract] · Nanyang Technological University (Singapore) "Effects of surface nitridation during nitrogen plasma ignition on optical quality of GaInAsN grown by solid source molecular beam epitaxy." SZ Wang, SF Yoon, and WK Loke, in JOURNAL OF APPLIED PHYSICS, 94(4):2662-2666 (2003). [ Abstract] · National Institute for Advanced Industrial Science & Technology (Japan) "Growth of c-axis oriented GaN films on quartz by pulsed laser deposition." RP Wang, H Muto, and T Kusumori, in OPTICAL MATERIALS, 23(1-2):15-20 (2003). [ Abstract] · National University of Singapore "Influence of substrate temperature and ion-beam energy on the syntheses of aluminium nitride thin films by nitrogen-ion-assisted pulsed-laser deposition." YW Goh, YF Lu, ZM Ren, and TC Chong, in APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 77(3-4):433-439 (2003). [ Abstract] · NIST/Technologies & Devices International Inc. "Transmission electron microscopy study of a defected zone in GaN on a SiC substrate grown by hydride vapor phase epitaxy." LA Bendersky, DV Tsvetkov, and YV Melnik, in JOURNAL OF APPLIED PHYSICS, 94(3):1676-1685 (2003). [ Abstract] · Northeastern University/ North Carolina State University/ University of Bremen (Germany)/ University of California-Berkeley "Helical-type surface defects in InGaN thin films epitaxially grown on GaN templates at reduced temperatures." PQ Miraglia, EA Preble, AM Roskowski, S Einfeldt, SH Lim, Z Liliental-Weber, and RF Davis, in THIN SOLID FILMS, 437(1-2):140-149 (2003). [ Abstract] · Osaka University (Japan)"Novel liquid phase epitaxy (LPE) growth method for growing large GaN single crystals: Introduction of the flux film coated-liquid phase epitaxy (FFC-LPE) method." F Kawamura, M Morishita, K Omae, M Yoshimura, Y Mori, and T Sasaki, in JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 42(8A):L879-L881 (2003). [ Abstract] · Pacific Northwest National Laboratory "Irradiation-induced recovery of disorder in gallium nitride." W Jiang and WJ Weber, in APPLIED PHYSICS LETTERS, 83(3):458-460 (2003). [ Abstract] · Polytechnic University of Madrid (Spain) "Influence of sputtering mechanisms on the preferred orientation of aluminum nitride thin films." M Clement, E Iborra, J Sangrador, A Sanz-Hervas, L Vergara, and M Aguilar, in JOURNAL OF APPLIED PHYSICS, 94(3):1495-1500 (2003). [ Abstract] · Ruhr University Bochum (Germany) "MOCVD of gallium nitride nanostructures using (N-3) Ga-2{( CH2)(3)NR2}, R = Me, Et, as a single molecule precursor: morphology control and materials characterization." J Khanderi, A Wohlfart, H Parala, A Devi, J Hambrock, A Birkner, and RA Fischer, in JOURNAL OF MATERIALS CHEMISTRY, 13(6):1438-1446 (2003). [ Abstract] · Russian Academy of Sciences (Russia) "Bulk large-area GaN layers." YV Zhilyaev, AV Nasonov, SD Raevskii, SN Rodin, MP Shcheglov, SA Yusupova, and VY Davydov, in TECHNICAL PHYSICS LETTERS, 29(5):400-403 (2003). [ Abstract] · Russian Academy of Sciences (Russia)/Moscow State Technological University of Stankin (Russia)/ TU Chemnitz (Germany) "Raman spectroscopy of GaN nucleation and free-standing layers grown by hydride vapor phase epitaxy on oxidized silicon." EV Konenkova, YV Zhilyaev, VA Fedirko, and DRT Zahn, in APPLIED PHYSICS LETTERS, 83(4):629-631 (2003). [ Abstract] · Russian Academy of Sciences (Russia)/ Soft Impact Ltd. (Russia)/ Semiconductor Technology Research Inc. "Advances in modeling of wide-bandgap bulk crystal growth." MV Bogdanov, SE Demina, SY Karpov, AV Kulik, MS Ramm, and YN Makarov, in CRYSTAL RESEARCH AND TECHNOLOGY, 38(3-5):237-249 (2003). [ Abstract] · Stanley Electric Co. Ltd (Japan) "Control of emission wavelength of GaInN single quantum well, light emitting diodes grown hy metalorganic chemical vapor deposition in a split-flow reactor." Y Yamashita, H Tamura, N Horio, H Sato, K Taniguchi, T Chinone, S Omori, and C Funaoka, in JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 42(7A):4197-4202 (2003). [ Abstract] · SUNY Albany/ Carnegie Mellon University/ Sandia National Laboratories/ University of Illinois "Growth of GaN on porous SiC and GaN substrates." CK Inoki, TS Kuan, CD Lee, A Sagar, RM Feenstra, DD Koleske, DJ Diaz, PW Bohn, and I Adesida, in JOURNAL OF ELECTRONIC MATERIALS, 32(8):855-860 (2003). [Scroll down to view Abstract] · Tottori University (Japan)/ National Institute for Advanced Industrial Science & Technology (Japan) "First-principles calculation of the dyanamics of nitrogen on the SiC(0001) surface during the epitaxial growth of GaN(0001)." A Ishii, S Koyama, and T Aisaka, in JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 42(7B):4636-4638 (2003). [ Abstract] · Tsing Hua University (China) "Photoluminescence of Mg-doped GaN with different Mg concentrations after annealing at different temperatures." XY Zhou, CZ Sun, WP Guo, H Hu, and Y Luo, in CHINESE PHYSICS LETTERS, 20(7):1137-1140 (2003). [ Abstract] · University of Bristol (UK)/ Lumilog (France)/ Technical University of Munich (Germany) "Free-standing GaN grown on epitaxial lateral overgrown GaN substrates." G Martinez-Criado, M Kuball, M Benyoucef, A Sarua, E Frayssinet, B Beaumont, P Gibart, CR Miskys, and M Stutzmann, in JOURNAL OF CRYSTAL GROWTH, 255(3-4):277-281 (2003). [ Abstract] · University of California-Los Angeles "Comment on "Annealing behavior of a proton irradiated, AlxGa1-xN/GaN high electron mobility transistors grown by MBE" - Author's reply." L Fan and Y Hao, in IEEE TRANSACTIONS ON ELECTRON DEVICES, 50(7):1716-1716 (2003). [ Abstract] · University of California-Santa Barbara "Defect reduction in (11(2)over-bar0) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy." BA Haskell, F Wu, MD Craven, S Matsuda, PT Fini, T Fujii, K Fujito, SP DenBaars, JS Speck, and S Nakamura, in APPLIED PHYSICS LETTERS, 83(4):644-646 (2003). [ Abstract] · University of Central Florida/ Crystal Photonics Inc. "Defects in m-face GaN films grown by halide vapor phase epitaxy on LiAlO2." RR Vanfleet, JA Simmons, HP Maruska, DW Hill, MMC Chou, and BH Chai, in APPLIED PHYSICS LETTERS, 83(6):1139-1141 (2003). [ Abstract] · University of Grenoble (France)/ NGK Insulators Ltd. Corp (Japan) "Structure of GaN quantum dots grown under "modified Stranski-Krastanow" conditions on AlN." N Gogneau, D Jalabert, E Monroy, T Shibata, M Tanaka, and B Daudin, in JOURNAL OF APPLIED PHYSICS, 94(4):2254-2261 (2003). [ Abstract] · University of North Texas/ Arizona State University; "Heterogeneous silicon integration by ultra-high vacuum wafer bonding." MJ Kim and RW Carpenter, in JOURNAL OF ELECTRONIC MATERIALS, 32(8):849-854 (2003). [ Abstract] · University of Nottingham (UK) "Isoelectronic doping of AlGaN alloys with As and estimates of AlGaN/GaN band offsets." CT Foxon, SV Novikov, LX Zhao, and I Harrison, in APPLIED PHYSICS LETTERS, 83(6):1166-1168 (2003). [ Abstract] · University of Nottingham (UK)/ University of Cambridge (UK) "Blue emission from As-doped GaN films grown by molecular beam epitaxy on GaN templates." SV Novikova, LX Zhao, AJ Winser, M Kappers, JS Barnard, I Harrison, C Humphreys, and CT Foxon, in JOURNAL OF CRYSTAL GROWTH, 256(3-4):237-242 (2003). [ Abstract] · University of Oxford (UK)/ University of Cambridge (UK) "InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal." RA Oliver, GAD Briggs, MJ Kappers, CJ Humphreys, S Yasin, JH Rice, JD Smith, and RA Taylor, in APPLIED PHYSICS LETTERS, 83(4):755-757 (2003). [ Abstract] · University of Science & Technology Lille (France)/ CEA Grenoble (France) "Cathodoluminescence study of carrier diffusion in AlGaN." J Barjon, J Brault, B Daudin, D Jalabert, and B Sieber, in JOURNAL OF APPLIED PHYSICS, 94(4):2755-2757 (2003). [ Abstract] · University of Sevilla (Spain) "Sintering of Al/AlN composite powder obtained by gas-solid reaction milling." M Naranjo, JA Rodriguez, and EJ Herrera, in SCRIPTA MATERIALIA, 49(1):65-69 (2003). [ Abstract] · University of Tokyo (Japan)/ Research Institute for Applied Sciences (Japan) "Feasibility of plasma nitriding for effective surface treatment of pure aluminum." P Visuttipitukul, T Aizawa, and H Kuwahara, in MATERIALS TRANSACTIONS, 44(7):1412-1418 (2003). [ Abstract] · University of Tsukuba (Japan)/ RIKEN (Japan)/ Waseda University (Japan)/ Kanagawa University (Japan)/ Meijo University (Japan) "Recombination dynamics of localized excitons in Al1-xInxN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy." T Onuma, S Chichibu, Y Uchinuma, T Sota, S Yamaguchi, S Kamiyama, H Amano, and I Akasaki, in JOURNAL OF APPLIED PHYSICS, 94(4):2449-2453 (2003). [ Abstract] · Xidian University (China) "Comment on "Annealing behavior of a proton irradiated, AlxGa1-xN/GaN high electron mobility transistors grown by MBE"." L Fan and Y Hao, in IEEE TRANSACTIONS ON ELECTRON DEVICES, 50(7):1715-1716 (2003). [ Abstract] B. Materials and Device Design Properties · Chinese Academy of Sciences (China) "Direct bonding copper to aluminium nitride substrate." XR Xu, HR Zhuang, WL Li, SY Xu, BL Zhang, and GJ Jiang, in JOURNAL OF INORGANIC MATERIALS, 18(4):837-842 (2003). [Abstract not available] · Chinese Academy of Sciences (China) "Microstructure of GaN films grown on Si(111) substrates by metalorganic chemical vapor deposition." GQ Hu, X Kong, L Wan, YQ Wang, XF Duan, Y Lu, and XL Liu, in JOURNAL OF CRYSTAL GROWTH, 256(3-4):416-423 (2003). [ Abstract] · Chinese Academy of Sciences (China) "Thickness measurement of GaN epilayer using high resolution X-ray diffraction technique." G Feng, JJ Zhu, XM Shen, BS Zhang, DG Zhao, YT Wang, H Yang, and JW Liang, in SCIENCE IN CHINA SERIES G-PHYSICS ASTRONOMY, 46(4):437-440 (2003). [ Abstract] · Chinese Academy of Sciences (China)/ Lingling College (China) "Self-catalyzed growth of large-area GaN nanowires and their optical properties." SM Zhou, YS Feng, and LD Zhang, in PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 1-2:87-95 (2003). [Abstract not available] · Chinese Academy of Sciences (China)/ NagoyaUniversity (Japan)/ Mie University (Japan) "Photoluminescence of Mg-doped GaN grown by metalorganic chemical vapor deposition." BZ Qu, QS Zhu, XH Sun, SK Wan, ZG Wang, H Nagai, Y Kawaguchi, K Hiramatsu, and N Sawaki, in JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 21(4):838-841 (2003). [ Abstract] · Chinese University of Hong Kong (China)/ City University of Hong Kong (China)/ Hong Kong Polytechnic University (China)/ Hong Kong Baptist College (China) "Raman and photoluminescence spectroscopy of free-standing GaN separated from sapphire substrates by 532 nm Nd : YAG laser lift-off." HP Ho, KC Lo, GG Siu, C Surya, KF Li, and KW Cheah, in MATERIALS CHEMISTRY AND PHYSICS, 81(1):99-103 (2003). [ Abstract] · Chonbuk National University (South Korea) "Doping, characteristics of Al0.15Ga0.85N epilayers with various Mg incorporations." CR Lee, IH Lee, JM Yeon, KW Seol, HK Ahn, and BJ Baek, in JOURNAL OF CRYSTAL GROWTH, 256(1-2):56-62 (2003 ). [ Abstract] · Chonbuk National University (South Korea) "Electron capture behaviors of deep level traps in unintentionally doped and intentionally doped n-type GaN." HK Cho, CS Kim, and CH Hong, in JOURNAL OF APPLIED PHYSICS, 94(3):1485-1489 (2003). [ Abstract] · Chonbuk National University (South Korea) "Influence of a GaN interfacial layer between n(+)-GaN and active layer on the characteristics of blue light-emitting diodes." CS Kim, HK Cho, CH Hong, and HJ Lee, in APPLIED PHYSICS LETTERS, 83(7):1447-1449 (2003). [ Abstract] · EMCORE Corp/CUNY Brooklyn College "Correlation of thermal with structural and optical properties of high quality GaN/sapphire (0001) grown by metalorganic chemical vapor deposition." DI Florescu, DS Lee, SM Ting, JC Ramer, and FH Pollak, in JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 42(7A):4444-4447 (2003). [ Abstract] · Hong Kong Polytechnic University (China) "Study of low-frequency excess noise in GaN materials." BH Leung, WK Fong, and C Surya in OPTICAL MATERIALS, 23(1-2):203-206 (2003). [ Abstract] · INFM (France)/ University of Padua (Italy)/ University of Trent (Italy)/ ENEA (Italy) "Towards controllable optical response of GaN quantum dots in alumina." C Maurizio, G Mattei, MA Garcia, E Borsella, P Mazzoldi, A Quaranta, and F D'Acapito, in EUROPEAN PHYSICAL JOURNAL D, 25(1):25-29 (2003). [ Abstract] · Kansas State University "Mg acceptor level in AlN probed by deep ultraviolet photoluminescence" KB Nam, ML Nakarmi, J Li, JY Lin, and HX Jiang, in APPLIED PHYSICS LETTERS, 83(5):878-880 (2003). [ Abstract] · Korea Research Institute of Chemical Technology (South Korea) "Brightness and decay time of Zn2SiO4 : Mn phosphor particles with spherical shape and fine size." YC Kang and HD Park, in APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 77(3-4):529-532 (2003). [ Abstract] · Kwangju Institute of Science & Technology (South Korea) "Highly low resistance and transparent Ni/ZnO ohmic contacts to p-type GaN." JO Song, KK Kim, SJ Park, and TY Seong, in APPLIED PHYSICS LETTERS, 83(3):479-481 (2003). [ Abstract] · Lawrence Livermore National Laboratory/ University of California-Berkeley/ Cornell University "Universal bandgap bowing in group-III nitride alloys." J Wu, W Walukiewicz, KM Yu, JW Ager, SX Li, EE Haller, H Lu, and WJ Schaff, in SOLID STATE COMMUNICATIONS, 127(6):411-414 (2003). [ Abstract] · Lucent Technologies/ Arizona State University/ Agere Systems "Structural and optical characterization of nonpolar GaN/AlN quantum wells." HM Ng, A Bell, FA Ponce, and SNG Chu, in APPLIED PHYSICS LETTERS, 83(4):653-655 (2003). [ Abstract] · Nanjing University (China) "Characterization of GaN1-xPx alloys grown by metal-organic chemical vapor deposition." DJ Chen, B Shen, ZX Bi, KX Zhang, SL Gu, R Zhang, Y Shi, and YD Zheng, in OPTICAL MATERIALS, 23(1-2):127-132 (2003). [ Abstract] · Nanjing University (China) "Investigation of the crystal tilts in laterally epitaxial overgrowth GaN films formed by hydride vapor phase epitaxy." F Wang, R Zhang, DQ Lu, XQ Xiu, SL Gu, B Shen, Y Shi, YD Ye, and YD Zheng, in OPTICAL MATERIALS, 23(1-2):123-126 (2003). [ Abstract] · Nanjing University (China) " Structural properties of GaN1-xPx films." DJ Chen, B Shen, KX Zhang, YZ Deng, J Fan, R Zhang, Y Shi, and YD Zheng, in ACTA PHYSICA SINICA, 52(7):1788-1791 (2003). [Abstract not available] · Nanjing University (China) "Study on the AlN/Si(111) interface properties." DJ Xi, YD Zheng, P Chen, RM Chu, SL Gu, B Shen, and R Zhang, in OPTICAL MATERIALS, 23(1-2): 143-146 (2003). [ Abstract] · Nanyang Technological University (Singapore) "Origin of photoluminescence of GaAsN/GaN(001) layers grown by plasma-assisted solid source molecular beam epitaxy." SZ Wang, SF Yoon, WK Loke, CY Liu, and S Yuan, in JOURNAL OF CRYSTAL GROWTH, 255(3-4):258-265 (2003). [ Abstract] · National Autonomous University of Mexico "Optical and surface analysis of DC-reactive sputtered AlN films." A Mahmood, R Machorro, S Muhl, J Heiras, FF Castillon, MH Farias, and E Andrade, in DIAMOND AND RELATED MATERIALS, 12(8):1315-1321 (2003). [ Abstract] · National Cheng Kung University (Taiwan)/ South Epitaxy Corp. (Taiwan)/ Kun Shan University of Technology (Taiwan)/ National Yunlin University of Science & Technology (Taiwan)/ Nan-Jeon Junior College of Technology & Commerce (Taiwan) "Nitride-based LEDs fabricated on patterned sapphire substrates." SJ Chang, YC Lin, YK Su, CS Chang, TC Wen, SC Shei, JC Ke, CW Kuo, SC Chen, and CH Liu, in SOLID-STATE ELECTRONICS, 47(9):1539-1542 (2003). [ Abstract] · National Cheng Kung University (Taiwan)/ South Epitaxy Corp. (Taiwan)/ National Central University (Taiwan) "Nitride-based green light-emitting diodes with high temperature GaN barrier layers." LW Wu, SJ Chang, YK Su, RW Chuang, TC Wen, CH Kuo, WC Lai, CS Chang , JM Tsai, and JK Sheu, in IEEE TRANSACTIONS ON ELECTRON DEVICES, 50(8):1766-1770 (2003). [Scroll to Abstract] · NTT Corp (Japan) "Low-threshold lasing of InGaN vertical-cavity surface-emitting lasers with dielectric distributed Bragg reflectors." T Tawara, H Gotoh, T Akasaka, N Kobayashi, and T Saitoh, in APPLIED PHYSICS LETTERS, 83(5):830-832 (2003). [ Abstract] · Ohio University "Optical properties of Yb ions in GaN epilayer." WM Jadwisienczak and HJ Lozykowski, in OPTICAL MATERIALS, 23(1-2): 175-181 (2003). [ Abstract] · Peking University (China) "Optical and electronic properties of InGaN/GaN multi-quantum-wells near-ultraviolet lighting-emitting-diodes grown by low-pressure metalorganic vapour phase epitaxy." ZH Li, ZJ Yang, ZX Qin, YZ Tong, TJ Yu, S Lu, H Yang, and GY Zhang, in CHINESE PHYSICS LETTERS, 20(8):1350-1352 (2003). [ Abstract] · Peking University (China)/ University of New South Wales (Australia)'> "InGaN/GaN MQW high brightness LED grown by MOCVD." GY Zhang, ZJ Yang, YZ Tong, ZX Qin, XD Hu, ZZ Chen, XM Ding, M Lu, ZH Li, TJ Yu, L Zhang, ZZ Gan, Y Zhao, and CF Yang, in OPTICAL MATERIALS, 23(1-2):183-186 (2003). [ Abstract] · Rensselaer Polytechnic Institute "Experimental analysis and theoretical model for anomalously high ideality factors (n >> 2.0) in AlGaN/GaN p-n junction diodes." JM Shah, YL Li, T Gessmann, and EF Schubert, in JOURNAL OF APPLIED PHYSICS, 94(4):2627-2630 ( 2003). [ Abstract] · Rensselaer Polytechnic Institute/ National Central University (Taiwan) "Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths." YL Li, T Gessmann, EF Schubert, and JK Sheu, in JOURNAL OF APPLIED PHYSICS, 94(4):2167-2172 (2003). [ Abstract] · Sandia National Laboratories "Hydrogen configurations, formation energies, and migration barriers in GaN." AF Wright, CH Seager, SM Myers, DD Koleske, and AA Allerman, in JOURNAL OF APPLIED PHYSICS, 94(4):2311-2318 (2003). [ Abstract] · Shandong University (China)/ Shandong Normal University (China) "Structure and luminescence of GaN films by sputtering post-annealing-reaction technique." HL Ma, YG Yang, CS Xue, HZ Zhuang, XT Hao, and J Ma, in DIAMOND AND RELATED MATERIALS, 12(8):1402-1405 (2003). [ Abstract] · Texas Technical University/ Agere Systems / CINVESTAV (Mexico) "Electrical properties of p-n junctions based on superlattices of AlN/AlGa(In)N." V Kuryatkov, K Zhu, B Borisov, A Chandolu, I Gherasoiu, G Kipshidze, SNG Chu, M Holtz, Y Kudryavtsev, R Asomoza, S Nikishin, and H Temkin, in APPLIED PHYSICS LETTERS, 83(7):1319-1321 (2003). [ Abstract] · University of California-San Diego/ University of California-Santa Barbara "Correlated scanning Kelvin probe and conductive atomic force microscopy studies of dislocations in gallium nitride." BS Simpkins, ET Yu, P Waltereit, and JS Speck, in JOURNAL OF APPLIED PHYSICS, 94(3):1448-1453 (2003). [ Abstract] · University of California-Santa Barbara "Electrical and structural properties of AlGaN/AlGaN superlattice structures grown by metal-organic chemical vapor deposition." S Keller, P Waltereit, P Cantu, UK Mishra, JS Speck, and SP DenBaars, in OPTICAL MATERIALS, 23(1-2):187-195 (2003). [ Abstract] · University of Complutense (Spain)/ University of Bologna (Italy) "Time-resolved cathodoluminescence and photocurrent study of the yellow band in Si-doped GaN." C Diaz-Guerra, J Piqueras, A Castaldini, A Cavallini, and L Polenta, in JOURNAL OF APPLIED PHYSICS, 94(4):2341-2346 (2003). [ Abstract] · University of Florida "Sputter deposited GaN doped erbium thin films: Photoluminescence and 1550 nm infrared electroluminescence." JH Kim, N Shepherd, M Davidson, and PH Holloway, in APPLIED PHYSICS LETTERS, 83(4):641-643 (2003). [ Abstract] · University of Hong Kong (China)/ Chinese Academy of Sciences (China) "Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire." DG Zhao, SJ Xu, MH Xie, SY Tong, and H Yang, in APPLIED PHYSICS LETTERS, 83(4):677-679 (2003). [ Abstract] · University of Nottingham (UK)/ Russian Academy of Sciences (Russia) "Photoluminescence from self-assembled GaAs inclusions embedded in a GaN host crystal." AV Andrianov, SV Novikov, T Li, R Xia , S Bull, I Harrison, EC Larkins, and CT Foxon, in PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 238(1):204-212 (2003). [Abstract] · University of Politechnic Cartagena (Spain)/ Paul Drude Inst Festkorperelekt (Germany)/ Politechnic University of Valencia (Spain)/ Fraunhofer Institute of Applied Solid-State Physics (Germany) "Modulation of the electronic properties of GaN films by surface acoustic waves." J Camacho, PV Santos, F Alsina, M Ramsteiner, KH Ploog, A Cantarero, H Obloh, and J Wagner, in JOURNAL OF APPLIED PHYSICS, 94(3):1892-1897 (2003). [ Abstract] · No articles were published in this area during this reporting period. · Bell Labs "Second-harmonic generation in periodically poled GaN." A Chowdhury, HM Ng, M Bhardwaj, and NG Weimann, in APPLIED PHYSICS LETTERS, 83(6):1077-1079 (2003). [ Abstract] · Ecole Polytecnique (France)/ University of Glasgow (UK)/ Ecole Polytechnique Fédérale de Lausanne (Switzerland)/ Institute of Optics (France) "Omnidirectional and compact guided light extraction from Archimedean photonic lattices." M Rattier, H Benisty, E Schwoob, C Weisbuch, TF Krauss, CJM Smith, R Houdre, and U Oesterle, in APPLIED PHYSICS LETTERS, 83(7):1283-1285 (2003). [ Abstract] · Georgia Institute of Technology "Single-molecule LEDs from nanoscale electroluminescent junctions." TH Lee and RM Dickson, in JOURNAL OF PHYSICAL CHEMISTRY B, 107(30):7387-7390 (2003). [Must be a member subscriber to view abstract Abstract] · JTIoTJ JST (Japan)/ Rhom Co. Ltd. "Fabrication and photoresponse of a pn-heterojunction diode composed of transparent oxide semiconductors, p-NiO and n-ZnO." H Ohta , M Hirano, K Nakahara, H Maruta, T Tanabe, M Kamiya, T Kamiya, and H Hosono, in APPLIED PHYSICS LETTERS, 83(5):1029-1031 (2003). [ Abstract] · Keio University (Japan)/ Sony Computer Sciences Laboratories Inc. (Japan) "Indoor visible light data transmission system utilizing white LED lights." Y Tanaka, T Komine, S Haruyama, and M Nakagawa, in IEICE TRANSACTIONS ON COMMUNICATIONS, E86B(8):2440-2454 (2003). [ Abstract] · University of Southern California "Polarization-dependent reflectivity from dielectric nanowires." Y Du, S Han, W Jin, C Zhou, and AFJ Levi, in APPLIED PHYSICS LETTERS, 83(5):996-998 (2003). [ Abstract] · Kansas State University "III-nitride quantum devices - Microphotonics." HX Jiang and JY Lin, in CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 28(2):131-183 (2003). [Click on Volume 28, Issue 2, then click on the Abstract] · Philips Research Laboratories (Germany)/ University of Utrecht (Netherlands) "Inorganic luminescent materials: 100 years of research and application." C Feldmann, T Justel, CR Ronda, and PJ Schmidt, in ADVANCED FUNCTIONAL MATERIALS, 13(7):511-516 (2003). [ Abstract] |
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