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ISSUE 18: SCIENTIFIC LITERATURE (Late May - Late July 2003) |
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From the Technical Literature The material in this section is selected from scientific and technical papers that became available during the reporting time period. Links to online abstracts are provided. Most online abstracts are freely accessible to the public. A few require journal subscriptions or memberships, and are noted as such. The technical literature section is roughly organized by subject area and, within subjects, alphabetically by institution of the lead author. Use the links below to go directly to a section. A. Materials and Device Fabrication B. Materials and Device Design Properties A. Materials and Device Fabrication · Akita University (Japan) ."Improvements of crystal orientations of wurtzite-type GaN thin films grown on metal surfaces." Y Sato, T Hishinuma, and S Sato, in IEICE Transactions on Electronics, E86C(6):1002-1006 (2003). [ Abstract] · Arizona State University ."Growth and optical properties of epitaxial GaN films on Si(111) using single gas-source molecular beam epitaxy." L Torrison, J Tolle, IST Tsong, and J Kouvetakis, in Thin Solid Films, 434(1-2):106-111 (2003). [ Abstract] · Catholic University of Leuven (Belgium)."Influence of the implantation angle on the generation of defects for Er implanted GaN." B Pipeleers, SM Hogg, and A Vantomme, in Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms, 206:95-98 (2003). [ Abstract] · CEA Grenoble (France) / INSA (France)/NGK Insulators Ltd (Japan) . "Growth and optical properties of GaN/AlN quantum wells." C Adelmann, E Sarigiannidou, D Jalabert, Y Hori, L Rouviere, B Daudin, S Fanget , C Bru-Chevallier, T Shibata, and M Tanaka, in Applied Physics Letters, 82(23):4154-4156 (2003). [ Abstract] · Chiba University (Japan ). "Effects of film polarities on InN growth by molecular-beam epitaxy." K Xu and A Yoshikawa, in Applied Physics Letters, 83(2):251-3 ( 2003 ). [ Abstract] · Chinese Academy of Sciences ( China ) . "Effects of ammonia flow at growth temperature ramping process on optical properties of InGaN/GaN multiple quantum wells." YJ Han, H Chen, HB Yu, DS Li, ZB Yan, Q Huang, and JM Zhou, in Journal of Crystal Growth, 253(1-4):203-207 (2003). [ Abstract] · Chinese Academy of Sciences ( China ) / Guangxi University (China). " X-ray diffraction analysis of MOCVD grown GaN buffer layers on GaAs(001) substrates. "XM Shen, YT Wang, XH Zheng, BS Zhang, J Chen, G Feng, and H Yang, in Journal of Crystal Growth, 254(1-2):23-27 ( 2003 ). [ Abstract] · Chinese Academy of Sciences ( China ) /. Sichuan University ( China ). " Effects of reactor pressure on GaN nucleation layers and subsequent GaN epilayers grown on sapphire substrate." J Chen, SM Zhang, BS Zhang, JJ Zhu, G Feng, XM Shen, YT Wang, H Yang, and WC Zheng, in Journal of Crystal Growth, 254(3-4):348-352 (2003). [ Abstract] · Chonbuk National University (South Korea). "High-quality GaN/Si(111) epitaxial layers grown with various Al0.3Ga0.7N/GaN superlattices as intermediate layer by MOCVD." SH Jang and CR Lee, in Journal of Crystal Growth, 253(1-4):64-70 (2003). [ Abstract] · Chungnam National University ( South Korea ) /HANtech Research & Development Center (South Korea)/Electronics & Telecommunication Research Institute (South Korea ). "Effect of excimer laser irradiation on polycrystalline GaN." SE Park, DJ Kim, WS Han, SI Ban, and B O, in Journal of Crystal Growth, 253(1-4):208-211 (2003). [ Abstract] · Dublin City University ( UK )/State University of Ghent (Belgium)/Helsinki University of Technology (Finland). "Tilted-wing-induced stress distribution in epitaxial lateral overgrown GaN." WM Chen, PJ McNally, J Kanatharana, and D Lowney, in Journal of Materials Science-Materials in Electronics, 14(5-7):283-286 (2003). [ Click on "Journal Contents" then Issue 14, Volumes 5-7 then scroll to abstract] · EMCORE Corp. "High-conductivity n-AlGaN with high Al mole fraction grown by metalorganic vapor phase deposition." M Pophristic, SP Guo, and B Peres, in Applied Physics Letters, 82(24):4289-4291 (2003). [ Abstract] · Helsinki University of Technology (Finland)/Wright State University/MIT/Samsung Advanced Institute of Technology (South Korea). "Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy." J Oila, J Kivioja, V Ranki, K Saarinen, DC Look, RJ Molnar, SS Park, SK Lee, and JY Han, in Applied Physics Letters, 82(20):3433-3435 (2003). [ Abstract] · Hitachi Cable Ltd. (Japan)/Hokkaido University (Japan). "Realization of low dislocation GaN/sapphire wafers by 3-step metalorganic vapor phase epitaxial growth with island induced dislocation control." H Fujikura, K Iizuka, and S Tanaka, in Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, 42(5A):2767-2772 (2003). [ Abstract] · Hong Kong Polytechnic University (China ). "Characterization of low-frequency noise in molecular beam epitaxy-grown GaN epilayers deposited on double buffer layers." WK Fong, SW Ng, BH Leung, and C Surya, in Journal of Applied Physics, 94(1):387-391 (2003). [ Abstract] · Industrial Technology Research Institute (Taiwan). "Improvement of InGaN-GaN light-emitting diodes with surface-textured indium-tin-oxide transparent ohmic contacts." SM Pan, RC Tu, YM Fan, RC Yeh, and JT Hsu, in IEEE Photonics Technology Letters, 15(5):649-651 (2003). [ Abstract] · Infineon Technology AG (Germany)/Vienna University of Technology (Austria)/Siemens AG Corp. (Germany). "Growth diagram and morphologies of AlN thin films grown by molecular beam epitaxy." G Koblmueller, R Averbeck, L Geelhaar, H Riechert, W Hosler , and P Pongratz, in Journal of Applied Physics, 93(12):9591-9596 (2003). [ Abstract] · Institute of Materials Research & Engineering (Singapore)/Nanyang Technology University (Singapore). "High quality AlGaInP epilayers grown by MOCVD using TBP for red lasers." JR Dong, JH Teng, SJ Chua, YJ Wang, BC Foo, HR Yuan, and S Yuan, in Journal of Crystal Growth, 253(1-4):161-166 (2003). [ Abstract] · Inter-University Center on Microelectronics (Belgium)/University of Instelling Antwerp (Belgium)/Faculté des Sciences (France). "Highly efficient room temperature spin injection in a metal-insulator-semiconductor light-emitting diode." P Van Dorpe, VF Motsnyi, M Nijboer, E Goovaerts, VI Safarov, J Das, W Van Roy, G Borghs, and J De Boeck, in Japanese Journal of Applied Physics Part 2-Letters, 42(5B):L502-L504 (2003). [ Abstract] · Korea University (South Korea)/Hanyang University (South Korea). "Triangular gallium nitride nanorods." SY Bae, HW Seo, J Park, HN Yang, H Kim, and S Kim, in Applied Physics Letters, 82(25):4564-4566 (2003). [ Abstract] · Lawrence Berkeley National Laboratory. "Synthesis of GaN{sub x}As{sub 1-x} thin films by pulsed laser melting and rapid thermal annealing of N{sup +}-implanted GaAs." KM Yu, W Walukiewicz, MA Scarpulla, OD Dubon, J Wu, J Jasinski, Z Liliental-Weber, JW Beeman, MR Pillai, and MJ Aziz, in Journal of Applied Physics, 94(2):1043-9 (2003). [ Abstract] · Linkoping University ( Sweden ). "Nanopipes and their relationship to the growth mode in thick HVPE-GaN layers." E Valcheva , T Paskova, and B Monemar, in Journal of Crystal Growth, 255(1-2):19-26 (2003). [ Abstract] · Linkoping University ( Sweden ) . "Using N-2 as precursor gas in III-nitride CVD growth." O Danielsson and E Janzen, in Journal of Crystal Growth, 253(1-4):26-37 (2003). [ Abstract] · Lucent Technologies. "GaN nanotip pyramids formed by anisotropic etching." HM Ng, NG Weimann, and A Chowdhury, in Journal of Applied Physics, 94(1):650-653 (2003). [ Abstract] · Mie University (Japan)/NGK Insulators Ltd. (Japan). "Metalorganic vapor phase epitaxy growth and study of stress in AlGaN using epitaxial AlN as underlying layer." Y Kida, T Shibata, H Miyake, and K Hiramatsu, in Japanese Journal of Applied Physics Part 2-Letters, 42(6A):L572-L574 (2003). [ Abstract] · Nanjing University (China)/Chinese Academy of Sciences (China). " GaN1-xPx ternary alloys with high P composition grown by metal-organic chemical vapor deposition." DJ Chen, B Shen, ZX Bi, KX Zhang, SL Gu, R Zhang, Y Shi, YD Zheng, XH Sun, SK Wan, and ZG Wang, in Journal of Crystal Growth, 255(1-2):52-56 (2003). [ Abstract] · Nanyang Technological University (Singapore). "The influence of deposition conditions on structure and morphology of aluminum nitride films deposited by radio frequency reactive sputtering." H Cheng, Y Sun, and P Hing, in Thin Solid Films, 434(1-2): 112-120 (2003). [ Abstract] · National Central University (Taiwan). "Mechanism investigation of NiOx in Au/Ni/p-type GaN ohmic contacts annealed in air." CT Lee, YJ Lin, and TH Lee, in Journal of Electronic Materials, 32(5):341-345 (2003). [Scroll to Abstract] · National Cheng Kung University (Taiwan) / Nan Jeon Institute of Technology (Taiwan). "Nitride-based green light emitting diodes grown by temperature ramping." CH Liu, YK Su, TC Wen, SJ Chang, and RW Chuang, in Journal of Crystal Growth, 254(3-4):336-341 (2003). [ Abstract] · National Cheng Kung University (Taiwan)/South Epitaxy Corp. (Taiwan)/National Central University (Taiwan). "InGaN/GaN multiple quantum well green light-emitting diodes prepared by temperature ramping." TC Wen, SJ Chang, YK Su, LW Wu, CH Kuo, WC Lai, JK Sheu, and TY Tsai, in Journal of Electronic Materials, 32(5):419-422 (2003). [Scroll to Abstract] · National Tsing Hua University (Taiwan). "Growth of aluminum nitride films at low temperature." YR Lin and ST Wu, in Journal of Crystal Growth, 252(1-3):433-439 (2003). [ Abstract] · National University of Singapore (Singapore). "Stoichiometric and structural alterations in GaN thin films during annealling." MA Rana, T Osipowicz, HW Choi, MBH Breese, F Watt, and SJ Chua, in Applied Physics A-Materials Science & Processing, 77(1):103-108 (2003). [ Abstract] · North Carolina State University. "Low temperature semiconductor surface passivation for nanoelectronic device applications. "C Bae and G Lucovsky, in Surface Science, 532:759-763 (2003). [ Abstract] · Northwestern Polytechnic University (China). "Synthesis of the various morphologies GaN one-dimensional nanomaterials. "ZJ Li, J Li, KZ Li, QJ Gong, and XB Xiong, in Journal of Materials Science Letters, 22(11):831-833 (2003). [ Click on Issue 22, Volume 11 then scroll to abstract] · Osaka University (Japan). "Effects of ammonia gas on threshold pressure and seed growth for bulk GaN single crystals by Na flux method." T Iwahashi, F Kawamura, M Morishita, Y Kai, M Yoshimura, Y Mori, and T Sasaki, in Journal of Crystal Growth, 253(1-4):1-5 (2003). [ Abstract] · Osaka University (Japan). "Effect of Ga re-evaporation on AlxGa1-xN thin film growth by dual-beam pulsed laser deposition method in N-2 ambient." Y Masuyama, S Komatsu, M Kiso, K Mizuno, and T Kobayashi, in Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, 42(5A):2856-2857 (2003). [ Abstract] · Pacific Northwest National Laboratory. "Ion-beam-irradiation induced defects in gallium nitride." W Jiang , WJ Weber, and CM Wang, in Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms, 206:1037-1041 (2003). [ Abstract] · Paul-Drude-Institute fur Festkorperelektronik (Germany). "Improved synthesis of (In, Ga)N/GaN multiple quantum wells by plasma-assisted molecular-beam epitaxy. " O Brandt, Yue Jun Sun, H-P Schonherr, KH Ploog, P Waltereit, Sung-Hwan Lim, and JS Speck, in Applied Physics Letters, 83(1):90-2 (2003). [ Abstract] · Peking University (China). "Etching damage and its recovery in n-GaN by reactive ion etching. "ZZ Chen, ZX Qin, YZ Tong, XM Ding, XD Hu, TJ Yu, ZJ Yang, and GY Zhang, in Physica B-Condensed Matter, 334(1-2):188-192 (2003). [ Abstract] · Pohang University of Science & Technology (South Korea). "Enhancement of Schottky barrier height on AlGaN/GaN heterostructure by oxidation annealing." CM Jeon and JL Lee, in Applied Physics Letters, 82(24):4301-4303 (2003). [ Abstract] · Purdue University/University of Florida. "Special issue on III-V nitrides and silicon carbides - Foreword." MA Capano and SJ Pearton, in Journal of Electronic Materials, 32(5):287 (2003). [Scroll to Abstract] · Research Triangle Park Office/Hampton University/Kansas State University. "Crystal, Compositional changes in erbium-implanted GaN films due to annealing. "JM Zavada, RG Wilson, U Hommerich, M Thaik, JT Seo, CJ Ellis, JY Lin, and HX Jiang, in Journal of Electronic Materials, 32(5):382-387 (2003). [Scroll to Abstract] · Samsung Electro-Mechanics (South Korea)/Kwangju Institute of Science & Technology (South Korea). "Effects of pressure and NH3 flow on the two-dimensional electron mobility in AlGaN/GaN heterostructures." DJ Kim, YT Moon, MS Yi, DY Noh, and SJ Park, in Journal of the Korean Physical Society, 42(5):691-695 (2003). [ Abstract] · Sandia National Laboratories. "Mass transport and kinetic limitations in MOCVD selective-area growth." ME Coltrin and CC Mitchell, in Journal of Crystal Growth, 254(1-2):35-45 (2003). [ Abstract] · Seoul National University (South Korea)/Samsung Advanced Institute of Technology (South Korea)/Hanvac Corp. (South Korea). "Growth of GaN epitaxial layers on sapphire with preheated ammonia and their structural and optoelectronic properties. "HJ Kim, SY Kwon, S Yim, H Na, B Kee, E Yoon, J Kim, SH Park, H Jeon, S Kim, JH Seo, K Park, MS Seon, C Sone, OH Nam, and Y Park, in Current Applied Physics, 3(4):351-354 (2003). [ Abstract] · Sung Kyun Kwan University (South Korea). "Sapphire etching with BCl3/HBr/Ar plasma. "CH Jeong, DW Kim, HY Lee, HS Kim, YJ Sung, and GY Yeom, in Surface & Coatings Technology, 171(1-3):280-284 (2003). [ Abstract] · SUNY-Stony Brook/North Carolina State University. "Growth kinetics and thermal stress in AlN bulk crystal growth." B Wu, RH Ma, H Zhang, M Dudley , R Schlesser, and Z Sitar, in Journal of Crystal Growth, 253(1-4):326-339 (2003). [ Abstract] · Technical University of Munich (Germany)/Walther Meissner Institute (Germany)/Technical University of Ilmenau (Germany). "Growth and characterization of GaN : Mn epitaxial films." T Graf, M Gjukic, M Hermann, MS Brandt, M Stutzmann, L Gorgens, JB Philipp, and O Ambacher, in Journal of Applied Physics, 93(12):9697-9702 (2003). [ Abstract] · Tokyo University of Agriculture & Technology (Japan). "High temperature ramping rate for GaAs (111)A substrate covered with a thin GaN buffer layer for thick GaN growth at 1000 degrees C." Y Kumagai, S Murakami , Y Kangawa, and A Koukitu, in Japanese Journal of Applied Physics Part 2-Letters, 42(5B):L526-L528 (2003). [ Abstract] · Toyohashi University of Technology (Japan)/Japan Atomic Energy Research Institute (Japan) / AIST (Japan) / Korea Institute of Science &Technology (South Korea). "Effects of implantation conditions on the luminescence properties of Eu-doped GaN. " Y Nakanishi, A Wakahara, H Okada, A Yoshida, T Ohshima, H Itoh, S Nakao, K Saito, and YT Kim, in Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms, 206:1033-1036 (2003). [ Abstract] · UC-Berkeley/Lawrence Berkeley Laboratory. "Watching GaN nanowires grow. "EA Stach, PJ Pauzauskie, T Kuykendall, J Goldberger, RR He, and PD Yang, in Nano Letters, 3(6):867-869 (2003). [ Must be an ACS subscriber to view abstract]] · UC- Los Angeles/Northrop Grumman Space Technology/University of South Carolina. "SiC substrate defects and III-N heteroepitaxy." BD Poust, TS Koga, R Sandhu, B Heying, R Hsing, M Wojtowicz , A Khan, and MS Goorsky, in Journal of Physics D-Applied Physics, 36(10A):A102-A106 (2003). [ Abstract] · UC-Santa Barbara. "Polarity determination of a-plane GaN on r-plane sapphire and its effects on lateral overgrowth and heteroepitaxy." Feng Wu, MD Craven, Sung-Hwan Lim, and JS Speck, in Journal of Applied Physics, 94(2):942-7 (2003). [ Abstract] · University of Bremen (Germany)/North Carolina State University. "Surface morphology and strain of GaN layers grown using 6H-SiC(0001) substrates with different buffer layers. "S Einfeldt , ZJ Reitmeier, and RF Davis, in Journal of Crystal Growth, 253(1-4):129-141 (2003). [ Abstract] · University of Bremen (Germany)/UC-Santa Barbara. "Crystallographic wing tilt in laterally overgrown GaN." C Roder, H Heinke, D Hommel, TM Katona, JS Speck, and SP DenBaars, in Journal of Physics D-Applied Physics, 36(10A):A188-A191 (2003). [ Abstract] · University of Florida. "Crystal growth of gallium nitride and manganese nitride using an high pressure thermal gradient process . " F Kelly, DR Gilbert, R Chodelka, RK Singh, and S Pearton, in Solid-State Electronics, 47(6):1027-1030 (2003). [ Abstract] · University of Florida / Seoul National University (South Korea). "Growth of the dilute magnetic semiconductor GaMnN by molecular-beam epitaxy." ME Overberg, GT Thaler, CR Abernathy, NA Theodoropoulou, KT McCarthy, SB Arnason, JS Lee, JD Lim, SB Shim, KS Suh, ZG Khim, YD Park, SJ Pearton, and AF Hebard, in Journal of Electronic Materials, 32(5):298-306 (2003). [Scroll to Abstract] · University of Jena (Germany)/Nuclear Technology Institute (Portugal). "Three-step amorphisation process in ion-implanted GaN at 15 K." E Wendler, A Kamarou, E Alves, K Gartner, and W Wesch, in Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms, 206:1028-1032 (2003). [ Abstract] · University of Magdeburg (Germany). "Time-delayed indium incorporation in ultrathin (InxGa1-xN/GaN) multiple quantum wells grown by metalorganic vapor phase epitaxy." F Schulze, J Blasing, A Dadgar, and A Krost, in Applied Physics Letters, 82(25):4558-4560 (2003). [ Abstract] · University of Oxford ( UK ). "Gallium nitride surface preparation optimised using in situ scanning tunnelling microscopy. "RA Oliver, C Norenberg, MG Martin, A Crossley, MR Castell, and GAD Briggs, in Applied Surface Science, 214(1-4):1-10 (2003). [ Abstract] · University of Oxford (UK)/Oxford Applied Research (UK). "The effect of V : III ratio on the growth of InN nanostructures by molecular beam epitaxy." RA Oliver, C Norenberg, MG Martin, MR Castell, L Allers, and GAD Briggs, in Surface Science, 532:806-810 (2003). [ Abstract] · University of South Carolina. "High-quality AlGaN layers over pulsed atomic-layer epitaxially grown AlN templates for deep ultraviolet light-emitting diodes." JP Zhang, HM Wang, WH Sun, V Adivarahan, S Wu, A Chitnis, CQ Chen, M Shatalov, E Kuokstis, JW Yang, and MA Khan, in Journal of Electronic Materials, 32(5):364-370 (2003). [Scroll to Abstract] · University of Tokyo (Japan). "Growth temperature dependence of structural properties for AlN films grown on (Mn, Zn)Fe2O4 substrates." J Ohta, H Fujioka, S Ito, and M Oshima, in Thin Solid Films, 435(1-2):218-221 (2003). [ Abstract] · University of Tokyo (Japan). "Growth of AlN on lattice-matched MnO substrates by pulsed laser deposition." S Ito, H Fujioka , J Ohta, H Takahashi, and M Oshima, in Thin Solid Films, 435(1-2):215-217 (2003). [ Abstract] · University of Tokyo (Japan). "Shortest intersubband transition wavelength (1.68 mu m) achieved in AlN/GaN multiple quantum wells by metalorganic vapor phase epitaxy." I Waki, C Kumtornkittikul, Y Shimogaki, and Y Nakano, in Applied Physics Letters, 82(25):4465-4467 (2003). [ Abstract] · University of Wisconsin. "Cubic GaN formation in Mn/GaN multilayer films grown on 6H-SiC(0001)." Y Cui, VK Lazorov, MM Goetz, H Liu, DP Robertson, M Gajdardziska-Josifovska, and L Li, in Applied Physics Letters, 82(26):4666-4668 (2003). [ Abstract] · US Navy Research Laboratory. "Synthesis of GaN by high-pressure ammonolysis of gallium triiodide." AP Purdy, S Case, and N Muratore , in Journal of Crystal Growth, 252(1-3):136-143 (2003). [ Abstract] B. Materials and Device Design Properties · Aarhus University (Denmark)/Technical University of Denmark (Denmark)/Niels Bohr Institute (Denmark). "High-pressure X-ray diffraction study of bulk- and nanocrystalline GaN." JE Jorgensen, JM Jakobsen, JZ Jiang, L Gerward, and JS Olsen, in Journal of Applied Crystallography, 36(3):920-925 (2003). [Scroll to Synopsis] · Air Force Institute of Technology/University of South Carolina/Kwangju Institute of Science and Technology (South Korea). "Indium-incorporation-induced transformation of optical, photoluminescence and lasing properties of InGaN epilayers." MY Ryu, E Kuokstis, CQ Chen, JW Yang, G Simin, MA Khan, GG Sim, and PW Yu, in Solid State Communications, 126(6):329-332 (2003). [ Abstract] · AIST (Japan). "Degradation of InGaN blue light-emitting diodes under continuous and low-speed pulse operations. "T Yanagisawa and T Kojima, in Microelectronics Reliability, 43(6):977-980 (2003). [ Abstract] · Anna University (India)/Center for Nuclear Science (China). "Electrical and optical isolation of GaN by high energy ion irradiation." MS Kumar, G Sonia, D Kanjilal, R Dhanasekaran, and J Kumar, in Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms, 207(3):308-313 (2003). [ Abstract] · Bell Laboratories/University of Wisconsin. "Impurity effects on photoluminescence in lateral epitaxially overgrown GaN." JWP Hsu, FF Schrey, MJ Matthews, SL Gu, and TF Kuech, in Journal of Electronic Materials, 32(5):322-326 (2003). [Scroll to Abstract] · Chang Gung University ( Taiwan ) / Nan Ya Plastics Corp. ( Taiwan ) . "Effect of current spreading on luminescence improvement in selectively oxidized AlGaInP light-emitting diodes. "TE Nee, KT Chien, YL Chou, LC Chou, CH Lin, RM Lin, BR Fang, and SS Chang, in Journal of Vacuum Science & Technology B, 21(3):1157-1160 (2003). [ Abstract] · Chinese Academy of Sciences (China). "Determination of twist angle of in-plane mosaic spread of GaN films by high-resolution X-ray diffraction." XH Zheng, H Chen, ZB Yan, YJ Han, HB Yu, DS Li, Q Huang, and JM Zhou, in Journal of Crystal Growth, 255(1-2):63-67 (2003). [ Abstract] · Chinese Academy of Sciences (China)/Hong Kong University of Science & Technology (China). "Localized exciton dynamics in AlInGaN alloy." JS Huang, X Dong, XD Luo, XL Liu, ZY Xu, and WK Ge, in Solid State Communications, 126(8):473-477 (2003). [ Abstract] · Chinese Academy of Sciences (China)/Jilin University (China). "Void formation and failure in InGaN/AlGaN double heterostructures." YG Wang, W Li, PD Han, and Z Zhang, in Journal of Crystal Growth, 253(1-4):404-412 (2003). [ Abstract] · Chungnam National University (South Korea)/Electronics & Telecommunication Research Institute (South Korea)/Chungbuk National University (South Korea). "Effect of native defects on electrical and optical properties of undoped polycrystalline GaN." SE Park, WS Han, HG Lee, and B O, in Journal of Crystal Growth, 253(1-4):107-111 (2003). [ Abstract] · CNRS (France)/University of Erlangen (Germany). "Inversion domains and pinholes in GaN grown over Si-(111). " AM Sanchez, P Ruterana, M Benamara, and HP Strunk, in Applied Physics Letters, 82(25):4471-4473 (2003). [ Abstract] · Colorado School of Mines/National Renewable Energy Laboratory. "Band-edge Potentials of n-type and p-type GaN. "JD Beach, RT Collins, and JA Turner, in Journal of the Electrochemical Society, 150(7):A899-A904 (2003). [ Abstract] · Cornell University/Kwangju Institute of Science & Technology (South Korea). "Improved light-output and electrical performance of InGaN-based, light-emitting diode by microroughening of the p-GaN surface." C Huh, KS Lee, EJ Kang, and SJ Park, in Journal of Applied Physics, 93(11):9383-9385 (2003). [ Abstract] · CUNY-Brooklyn. "Contactless electroreflectance, in the range of 20 K<T<300 K, of freestanding wurtzite GaN prepared by hydride-vapor-phase epitaxy. "YS Huang, FH Pollak, SS Park, KY Lee, and H Morkoc, in Journal of Applied Physics, 94(2):899-903 (2003). [ Abstract] · Dalian University of Technology (China). "Study on low-temperature growth of AlN single crystal film by ECR-PEMOCVD." FW Qin, B Gu, Y Xu, and DZ Yang, in Acta Physica Sinica, 52(5):1240-1244 (2003). [URL not available] · Dongguk University (South Korea)/Hanyang University (South Korea). "Polarity determination for GaN/AlGaN/GaN heterostructures grown on (0001) sapphire by molecular beam epitaxy." YS Park, HS Lee, JH Na, HJ Kim, SM Si, HM Kim, TW Kang, and JE Oh, in Journal of Applied Physics, 94(1):800-802 (2003). [ Abstract] · Dongguk University (South Korea)/Hanyang University (South Korea). "Characteristics of GaN epilayer grown on Al2O3 with AlN buffer layer by molecular beam epitaxy." HC Jeon, HS Lee, SM Si, YS Jeong, JH Na, YS Park, TW Kang, and JE Oh, in Current Applied Physics, 3(4):385-388 (2003). [ Abstract] · Duke University/Virginia Commonwealth University. "Stimulated emission and ultrafast carrier relaxation in AlGaN/GaN multiple quantum wells." U Ozgur, HO Everitt, L He, and H Morkoc, in Applied Physics Letters, 82(23):4080-4082 (2003). [ Abstract] · EMCORE Corp/Georgia Institute of Technology. "Quaternary InAlGaN-based multi-quantum wells for ultraviolet light emitting diodes grown by metalorganic chemical vapor deposition." SP Guo, M Pophristic, B Peres, and IT Ferguson, in Journal of Crystal Growth, 252(4):486-492 (2003). [ Abstract] · ENEA (Italy)/Paul Drude Institute fur Festkorperelekt (Germany). "Structural properties of InxGa1-xN/GaN and AlxGa1-xN/GaN MQWs studied by XRD. "MA Tagliente, L Tapfer, P Waltereit, O Brandt, and KH Plogg, in Journal of Physics D-Applied Physics, 36(10A):A192-A197 (2003). [ Abstract] · European Synchrotron Radiation Facility (France)/Techical University of Ilmenau (Germany). "GaN polarity domains spatially resolved by X-ray standing wave microscopy." M Drakopoulos, J Zegenhagen, TL Lee, A Snigirev, I Snigireva, V Cimalla, and O Ambacher, in Journal of Physics D-Applied Physics, 36(10A):A214-A216 (2003). [ Abstract] · Federal University of Ceara (Brazil). "Lattice dynamics in wide band gap materials based superlattices." V Lemos, in Microelectronics Journal, 34(5-8):395-399 (2003). [ Abstract] · Federal University of Sao Joao Del Rei (Brazil). "Vibrational spectra of adsorbed hydrogen on GaN(001) surfaces. "FL de Almeida, LC de Carvalho, HWL Alves, and JLA Alves, in Microelectronics Journal, 34(5-8):451-453 (2003). [ Abstract] · Federal University of Sao Joao Del Rei (Brazil)/Federal University of Minas Gerais (Brazil). "Theoretical optical parameters for III-nitride semiconductors."ES Pinto, R de Paiva, LC de Carvalho, HWL Alves, and JLA Alves, in Microelectronics Journal, 34(5-8):721-724 (2003). [ Abstract] · Federal University of Sao Joao Del Rei (Brazil)/University of Sao Paulo (Brazi ). "Dynamical and thermodynamic properties of III-nitrides." LS Pereira, AM Santos, JLA Alves, HWL Alves, and JR Leite, in Microelectronics Journal, 34(5-8):655-657 (2003). [ Abstract] · Forschungszentrum (Germany)/Hungarian Academy of Sciences (Hungary/National Academy of Sciences-Ukraine (Ukraine)/Cornell University. "The investigation of properties of electron transport in AlGaN/GaN heterostructures." SV Danylyuk, SA Vitusevich, B Podor, AE Belyaev, AY Avksentyev, V Tilak, J Smart, A Vertiatchikh, and LF Eastman, in Microelectronics Journal, 34(5-8):575-577 (2003). [ Abstract] · GE Global Research Center (Russia)/AXT Inc. "Temperature-dependent electroluminescence in InGaN/GaN multiple-quantum-well light-emitting diodes." XA Cao, SF Leboeuf, LB Rowland, and H Liu, in Journal of Electronic Materials, 32(5):316-321 (2003). [Scroll to Abstract] · General Electric Company/AXT Inc. "Temperature-dependent emission intensity and energy shift in InGaN/GaN multiple-quantum-well light-emitting diodes." XA Cao, SF LeBoeuf, LB Rowland, CH Yan, and H Liu, in Applied Physics Letters, 82(21):3614-3616 (2003). [ Abstract] · Georgia Institute of Technology/Boston University/Politecn Turin (Italy). "Temperature dependence of the impact ionization coefficients in GaAs, cubic SiC, and zinc-blende GaN." L Tirino, M Weber, KF Brennan, E Bellotti, and M Goano, in Journal of Applied Physics, 94(1):423-430 (2003). [ Abstract] · Hirosaki University (Japan)/University of Tsukuba (Japan). "InGaN-based single-chip multicolor light-emitting diodes." T Azuhata, T Homma, Y Ishikawa, and SF Chichibu, in Japanese Journal of Applied Physics Part 2-Letters, 42(5B):L497-L498 (2003). [ Abstract] · Hokkaido University (Japan). "Effects of Mg accumulation on chemical and electronic properties of Mg-doped p-type GaN surface." T Hashizume, in Journal of Applied Physics, 94(1):431-436 (2003). [ Abstract] · Hokkaido University (Japan)/Japan Science & Technology Corp. ( Japan ) / University of Tokyo (Japan). "Two-photon absorption and multiphoton-induced photoluminescence of bulk GaN excited below the middle of the band gap." Y Toda, T Matsubara, R Morita, M Yamashita, K Hoshino, T Someya, and Y Arakawa, in Applied Physics Letters, 82(26):4714-4716 (2003). [ Abstract] · Hong Kong University of Science & Technology (China)/Zhejiang University (China)/Kansas State University. "Dynamics of below-band-gap carrier in highly excited GaN." B Guo, KS Wong, ZZ Ye, HX Jiang, and JY Lin, in Chinese Physics Letters, 20(5):749-752 (2003). [ Abstract] · Hubei University (China)/NIST . "Interfacial reactions of Ti/n-GaN contacts at elevated temperature." CJ Lu, AV Davydov, D Josell, and LA Bendersky, in Journal of Applied Physics, 94(1):245-253 (2003). [ Abstract] · Industrial Technology Research Institute (Taiwan). "Enhanced output power of InGaN-GaN light-emitting diodes with high-transparency nickel-oxide-indium-tin-oxide ohmic contacts." SM Pan, RC Tu, YM Fan, RC Yeh, and JT Hsu, in IEEE Photonics Technology Letters, 15(5):646-648 (2003). [ Abstract] · Institute of Chemical Technology (Czech Republic). "High temperature enthalpy and heat capacity of GaN." J Leitner, A Strejc, D Sedmidubsky, and K Ruzicka, in Thermochimica Acta, 401(2):169-173 (2003). [ Abstract] · Institute of Material Science & Applied Research (Lithuania). "Luminescence decay in highly excited GaN grown by hydride vapor-phase epitaxy. "S Jursenas, S Miasojedovas, G Kurilcik, A Zukauskas, and PR Hageman, in Applied Physics Letters, 83(1):66-8 (2003). [ Abstract] · Institute of Microelectronics Madrid (Spain). "Lateral composition modulation in strain compensated (GaInP)(m)(GaInAs)m short-period superlattices grown on (001) InP by atomic layer molecular beam epitaxy." D Golmayo, ML Dotor, and C Quintana, in Journal of Crystal Growth, 253(1-4):167-173 (2003). [ Abstract] · Institute of Radio Physics & Electronics (India). "On the band gap of indium nitride. "BR Nag, in Physica Status Solidi B-Basic Research, 237(2):R1-R2 (2003). [ Abstract] · Institute of Rare Metals (Russia)/Russian Academy of Sciences (Russia)/Corning Applied Technologies/University of Florida. "Effect of mosaic structure on mobilities in p-GAN films and superlattices as revealed by multifractal analysis of atomic force microscope images of the surface." NM Shmidt, AG Kolmakov, AV Loskutov, AY Polyakov, NB Smirnov, AV Govorkov, SJ Pearton, and AV Osinsky, in Solid-State Electronics, 47(6):1003-1008 (2003). [ Abstract] · Japan Fine Ceramics Center (Japan) . "Substrate-polarity dependence of AlN single-crystal films grown on 6H-SiC(0001) and (0001) by molecular beam epitaxy." M Harada, Y Ishikawa, T Saito, and N Shibata, in Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, 42(5A):2829-2833 (2003). [ Abstract] · Kansas State University. "Nitride microlens arrays for blue and ultraviolet wavelength applications. "TN Oder, J Shakya, JY Lin, and HX Jiang, in Applied Physics Letters, 82(21):3692-3694 (2003). [ Abstract] · Korea Institute of Science & Technology (South Korea)/Yonsei University (South Korea). "Relationship between residual stress and structural properties of AlN films deposited by r.f. reactive sputtering." SH Lee, KH Yoon, DS Cheong, and JK Lee, in Thin Solid Films, 435(1-2):193-198 (2003). [ Abstract] · Linkoping University (Sweden)/Meijo University (Japan). "Influence of polarization fields and depletion fields on photoluminescence of AlGaN/GaN multiple quantum well structures." B Monemar, H Haratizadeh, PP Paskov, G Pozina, PO Holtz, JP Bergman, S Kamiyama, M Iwaya, H Amano, and I Akasaki, in Physica Status Solidi B-Basic Research, 237(1):353-364 (2003). [ Abstract] · Meisei University (Japan)/Yamanashi University (Japan)/Brno University of Technology (Czech Republic)/Communication Research Labs (Japan). "Evaluation of Al/Ti/n-GaN contacts by current noise measurements." N Tanuma, H Tanizaki, S Yokokura, S Hashiguchi, J Sikula, T Matsui, and M Tacano, in Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, 42(5A):2569-2572 (2003). [ Abstract] · Nagoya Institute of Technology (Japan). "Anomalous compositional pulling effect in InGaN/GaN multiple quantum wells." M Hao, H Ishikawa, T Egawa, CL Shao, and T Jimbo, in Applied Physics Letters, 82(26):4702-4704 (2003). [ Abstract] · Nagoya Institute of Technology ( Japan )." Correlation between electrical and surface properties of n-GaN on sapphire grown by metal-organic chemical vapor deposition." N Nakada , M Mori, H Ishikawa, T Egawa, and T Jimbo, in Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, 42(5A):2573-2577 (2003). [ Abstract] · National Central University (Taiwan)/Industrial Technology Research Institute (Taiwan). "Electrical-efficiency analysis of GaN-based light-emitting diodes with interdigitated-mesa geometry." YS Ting,CC Chen, JK Sheu, GC Chi, and JT Hsu, in Journal of Electronic Materials, 32(5):312-315 (2003). [Scroll to Abstract] · National Central University (Taiwan)/National Taiwan Ocean University (Taiwan). "Investigation of accumulated carrier mechanism on sulfurated GaN layers." YJ Lin, CS Lee, and CT Lee, in Journal of Applied Physics, 93(9):5321-5324 (2003). [ Abstract] · National Cheng Kung University (Taiwan)/National Central University (Taiwan)/South Epitaxy Corp. (Taiwan)/National Yunlin University of Science & Technology (Taiwan)." InGaN/GaN LEDs with a Si-doped InGaN/GaN short-period superlattice tunneling contact layer." LW Wu, SJ Chang, YK Su, TY Tsai, TC Wen, CH Kuo, WC Lai, JK Sheu, JM Tsai, SC Chen, and BR Huang, in Journal of Electronic Materials, 32(5):411-414 (2003). [Scroll to Abstract] · National Cheng Kung University (Taiwan)/National Central University (Taiwan)/South Epitaxy Corp. (Taiwan)/National Yunlin University of Science & Technology (Taiwan). "Nitride-based near-ultraviolet multiple-quantum well light-emitting diodes with AlGaN barrier layers." CH Kuo, SJ Chang, YK Su, LW Wu, JK Sheu, TC Wen, WC Lai, JM Tsai, and SC Chen, in Journal of Electronic Materials, 32(5):415-418 (2003). [Scroll to Abstract] · National Cheng Kung University (Taiwan)/South Epitaxy Corp. (Taiwan)/National Yunlin University of Science & Technology (Taiwan). "InGaN/GaN light-emitting diodes with a reflector at the backside of sapphire substrates." YP Hsu, SJ Chang, YK Su, CS Chang, SC Shei, YC Lin, CH Kuo, LW Wu, and SC Chen, in Journal of Electronic Materials, 32(5):403-406 (2003). [Scroll to Abstract] · National Chiao Tung University (Taiwan)/Southern Taiwan University of Technology (Taiwan). "Analysis of physical properties of III-nitride thin films by nanoindentation." SR Jian, TH Fang, and DS Chuu, in Journal of Electronic Materials, 32(6):496-500 (2003). [Scroll to Abstract] · National Chung Hsing University (Taiwan). "AlGaInP/mirror/Si light-emitting diodes with vertical electrodes by wafer bonding." RH Horng, SH Huang, DS Wuu, and CY Chiu, in Applied Physics Letters, 82(23):4011-4013 (2003). [ Abstract] · National Taiwan University (Taiwan)/Advanced Epitaxy Technology Inc. (Taiwan)/Chung Hua University (Taiwan)/Chinese Naval Academy (Taiwan). "A microstructure study of post-growth thermally annealed InGaN/GaN quantum well structures of various well widths." YS Lin, KJ Ma, YY Chung, SW Feng, YC Cheng, EC Lin, CC Yang, CT Kuo, and JS Tsang, in Journal of Crystal Growth, 252(1-3):107-112 (2003). [ Abstract] · National Taiwan University (Taiwan)/Chinese Naval Academy (Taiwan)/National Defense University (Taiwan)/Advanced Epitaxy Technology Inc. (Taiwan)/Chung Hua University (Taiwan). "Quantum-well-width dependencies of postgrowth thermal annealing effects of InGaN/GaN quantum wells." YY Chung, YS Lin, SW Feng, YC Cheng, EC Lin, CC Yang, KJ Ma, C Hsu, HW Chuang, CT Kuo, and JS Tsang, in Journal of Applied Physics, 93(12):9693-9696 (2003). [ Abstract] · National Taiwan University (Taiwan)/National Central University (Taiwan). "Surface band-bending effects on the optical properties of indium gallium nitride multiple quantum wells." LH Peng, CW Shih, CM Lai, CC Chuo, and JI Chyi, in Applied Physics Letters, 82(24):4268-4270 (2003). [ Abstract] · National Taiwan University (Taiwan)/National Defense University (Taiwan)/Chung Hua University (Taiwan)/National Central University (Taiwan). "Mechanisms for photon-emission enhancement with silicon doping in InGaN/GaN quantum-well structures." YC Cheng, CH Tseng, C Hsu, KJ Ma, SW Feng, EC Lin, CC Yang, and JI Chyi, in Journal of Electronic Materials, 32(5):375-381 (2003). [Scroll to Abstract] · National University of Singapore (Singapore). "Electronic and positron properties of zinc-blende structure of GaN, AlN, and their alloy Ga1-xAlxN." Y Al-Douri, in Journal of Applied Physics, 93(12):9730-9736 (2003). [ Abstract] · National University of Singapore (Singapore)/University of Strathclyde (UK)/Institute of Materials Research & Engineering (Singapore). "Rutherford backscattering analysis of GaN decomposition." HW Choi, MG Cheong, MA Rana, SJ Chua, T Osipowicz, and JS Pan, in Journal of Vacuum Science & Technology B, 21(3):1080-1083 (2003). [ Abstract] · Nippon Telegraph & Telephone Public Corp. (Japan). "High-color-rendering light sources consisting of a 350-nm ultraviolet light-emitting diode and three-basal-color phosphors." T Nishida, T Ban, and N Kobayashi , in Applied Physics Letters, 82(22):3817-3819 (2003). [ Abstract] · North Carolina State University/Kyma Technologies Inc. "Optical and structural studies of hydride vapor phase epitaxy grown GaN." YC Chang, AL Cai, JF Muth, RM Kolbas, M Park, JJ Cuomo, A Hanser, and J Bumgarner, in Journal of Vacuum Science & Technology A, 21(3):701-705 (2003). [ Abstract] · North Carolina State University/Technical University of Ilmenau (Germany). "Micro-Raman study of electronic properties of inversion domains in GaN-based lateral polarity heterostructures." M Park, JJ Cuomo, BJ Rodriguez, WC Yang, RJ Nemanich, and O Ambacher, in Journal of Applied Physics, 93(12):9542-9547 (2003). [ Abstract] · Northeastern University/North Carolina State University/University of Bremen (Germany). "Helical-type surface defects in GaN thin films epitaxially grown on GaN templates at reduced temperatures." PQ Miraglia, EA Preble, AM Roskowski, S Einfeldt, and RF Davis, in Journal of Crystal Growth, 253(1-4):16-25 (2003). [ Abstract] · Palo Alto Research Center Inc. "Ultraviolet AlGaN multiple-quantum-well laser diodes." M Kneissl, DW Treat, M Teepe, N Miyashita , and NM Johnson, in Applied Physics Letters, 82(25):4441-4443 (2003). [ Abstract] · Paul Drude Institute fur Festkorperelek ( Germany ). "Polarization anisotropy of the photoluminescence of M-plane (In, Ga)N/GaN multiple quantum wells." YJ Sun, O Brandt, M Ramsteiner, HT Grahn, and KH Ploog, in Applied Physics Letters, 82(22):3850-3852 (2003). [ Abstract] · Paul Drude Institute fur Festkorperelekt (Germany). "Photoluminescence intensity of GaN films with widely varying dislocation density." YJ Sun, O Brandt, and KH Ploog, in Journal of Materials Research, 18(5):1247-1250 (2003). [ Abstract] · Peking University (China). "Effects of piezoelectricity and spontaneous polarization on localized excitons in self-formed InGaN quantum dots." JJ Shi and ZZ Gan, in Journal of Applied Physics, 94(1):407-415 (2003). [ Abstract] · Pohang University of Science & Technology (South Korea). "Transparent ohmic contacts of oxidized Ru and Ir on p-type GaN." HW Jang and JL Lee, in Journal of Applied Physics, 93(9):5416-5421 (2003). [ Abstract] · Pohang University of Science & Technology (South Korea)/Dongguk University (South Korea). "Microstructural, optical, and magnetic properties of Mn-implanted p-type GaN." JM Baik, JL Lee, Y Shon, and TW Kang, in Journal of Applied Physics, 93(11):9024-9029 (2003). [ Abstract] · Rensselaer Polytechnic Institute/Sensor Electronic Technology Inc. / AF Ioffe Physico-Technical Institute (Russia). "Nonlinear screening of pyroelectric films and grains in semiconductor matrix." AP Dmitriev, VY Kachorovskii, MS Shur, and R Gaska, in Journal of Applied Physics, 94(1):566-572 (2003). [ Abstract] · Ritsumeikan University (Japan). "RF-molecular beam epitaxy growth and properties of InN and related alloys." Y Nanishi, Y Saito, and T Yamaguchi, in Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, 42(5A):2549-2559 (2003). [ Abstract] · Seoul National University (South Korea)/University of Florida. "Observation of sphere resonance peak in ferromagnetic GaN : Mn ." SSA Seo, MW Kim, YS Lee, TW Noh, YD Park, GT Thaler, ME Overberg, CR Abernathy, and SJ Pearton, in Applied Physics Letters, 82(26):4749-4751 (2003). [ Abstract] · Shandong University (China)/Shandong normal University (China). "Preparation and properties of GaN nanostructures by post-nitridation technique." YG Yang, HL Ma, CS Xue, HZ Zhuang, Jin-Ma, and XT Hao, in Physica B-Condensed Matter, 334(3-4):287-291 (2003). [ Abstract] · South China normal University (China). "Graded heterojunction in AlGaInP compound semiconductors and its application to HB-LED." L Liu, GH Fan, CJ Liao, MD Cao, GC Chen, and LH Chen, in Acta Physica Sinica, 52(5): 1264-1271 (2003). [URL not available] · State University at Campinas (Brazil)/National Synchrotron Light Laboratory (Brazil)/North Carolina State University. "Cross-sectional Scanning Probe Microscopy of GaN-based p-n heterostructures." MIN da Silva, JC Gonzalez, and PE Russell, in Microelectronics Journal, 34(5-8):571-573 (2003). [ Abstract] · Tamkang University (Taiwan)/National Sun Yat Sen University (Taiwan)/National Synchrotron Radiation Research Center (Taiwan)/National Taiwan normal University (Taiwan)/Academy Sinica (Taiwan). "Electronic structure of GaN nanowire studied by x-ray-absorption spectroscopy and scanning photoelectron microscopy." JW Chiou, JC Jan, HM Tsai, WF Pong , MH Tsai, IH Hong, R Klauser, JF Lee, CW Hsu, HM Lin, CC Chen, CH Shen, LC Chen, and KH Chen, in Applied Physics Letters, 82(22):3949-3951 (2003). [ Abstract] · Techical University of Ilmenau (Germany)/Belarusian National Technical University-Minsk (Byelarus) / KFA Julich GmbH (Germany)/University of Jena (Germany). "Determination of the anisotropic dielectric function for wurtzite AlN and GaN by spectroscopic ellipsometry." S Shokhovets , R Goldhahn, G Gobsch, S Piekh , R Lantier, A Rizzi, V Lebedev, and W Richter, in Journal of Applied Physics, 94(1):307-312 (2003). [ Abstract] · Technical University of Carolo Wilhelmina Braunschweig (Germany)/OSRAM Opto Semiconductors (Germany). "High-resolution near-field spectroscopy investigation of GaN laterally overgrown structures on SiC." F Hitzel, A Hangleiter, S Miller , A Weimar, G Bruderl, A Lell, and V Harle, in Applied Physics Letters, 82(23):4071-4073 (2003). [ Abstract] · Tohoku University (Japan). "High-temperature strength of bulk single crystals of III-V nitrides." I Yonenaga, in Journal of Materials Science-Materials in Electronics, 14(5-7):279-281 (2003).). [ Click on "Journal Contents" then Issue 14, Volumes 5-7 then scroll to abstract] · UC-Berkeley/Helsinki University of Technology (Finland). "Contributions from gallium vacancies and carbon-related defects to the "yellow luminescence" in GaN." R Armitage, W Hong , Q Yang, H Feick, J Gebauer, ER Weber, S Hautakangas , and K Saarinen, in Applied Physics Letters, 82(20):3457-3459 (2003). [ Abstract] · UC-Santa Barbara. "Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures." S Heikman, S Keller, Y Wu, JS Speck, SP DenBaars, and UK Mishra, in Journal of Applied Physics, 93(12):10114-10118 (2003). [ Abstract] · University of Arkansas/Virginia Commonwealth University. "Infrared optical absorbance of intersubband transitions in GaN/AlGaN multiple quantum well structures." QY Zhou, JY Chen, B Pattada, MO Manasreh, FX Xiu, S Puntigan, L He , KS Ramaiah, and H Morkoc, in Journal of Applied Physics, 93(12):10140-10142 (2003). [ Abstract] · University of Bremen (Germany). "Microstructure of heteroepitaxial GaN revealed by x-ray diffraction." R Chierchia, T Bottcher, H Heinke, S Einfeldt, S Figge, and D Hommel, in Journal of Applied Physics, 93(11):8918-8925 (2003). [ Abstract] · University of Central Florida/Corning Inc./National Polytechnic University of Lvivska (Ukraine)/SVT Associates. "Impact of aluminum concentration and magnesium doping on the effect of electron injection in p-AlxGa1-xN." W Burdett, A Osinsky, V Kotlyarov, P Chow, A Dabiran, and L Chernyak, in Solid-State Electronics, 47(5):931-935 (2003). [ Abstract] · University of Central Florida/SVT Associates. "Cathodoluminescence studies of the electron injection-induced effects in GaN." L Chernyak, W Burdett, M Klimov, and A Osinsky, in Applied Physics Letters, 82(21):3680-3682 (2003). [ Abstract] · University of Cincinnati. "Red emission from Eu-doped GaN luminescent films grown by metalorganic chemical vapor deposition." M Pan and AJ Steckl, in Applied Physics Letters, 83(1):9-11 (2003). [ Abstract] · University of Florida/Sandia National Laboratories. "Thermal stability of WSix and W Schottky contacts on n-GaN." J Kim, F Ren, AG Baca, and SJ Pearton, in Applied Physics Letters, 82(19):3263-3265 (2003). [ Abstract] · University of Gesamthsch (Germany). "Light emission from cubic InGaN nanostructures." K Lischka, in Microelectronics Journal, 34(5-8):427-433 (2003). [ Abstract] · University of Hong Kong (China)/National Central University (Taiwan)/National Cheng Kung University (Taiwan). "Deep level defect in Si-implanted GaN n(+)-p junction." XD Chen, Y Huang, S Fung, CD Beling, CC Ling, JK Sheu, ML Lee, GC Chi, and SJ Chang, in Applied Physics Letters, 82(21):3671-3673 (2003). [ Abstract] · University of Illinois. "Long-term thermal stability of Ti/Al/Mo/Au ohmic contacts on n-GaN." D Selvanathan, L Zhou, V Kumar, I Adesida, and N Finnegan, in Journal of Electronic Materials, 32(5):335-340 (2003). [Scroll to Abstract] · University of Keele (UK). "Dielectric properties of RF-sputtered silicon nitride thin films with gold electrodes." RD Gould and SA Awan, in Thin Solid Films, 433(1-2):309-314 (2003). [ Abstract] · University of London University College (UK)/University of Cambridge (UK)/State University of Ghent (Belgium). "Detailed interpretation of electron transport in n-GaN." C Mavroidis, JJ Harris, MJ Kappers, CJ Humphreys, and Z Bougrioua, in Journal of Applied Physics, 93(11):9095-9103 (2003). [ Abstract] · University of Regina (Canada)/Cornell University / Rensselaer Polytechnic Institute. "Steady-state electron transport in the III-V nitride semiconductors: A sensitivity analysis." SK O'Leary, BE Foutz, MS Shur, and LF Eastman, in Journal of Electronic Materials, 32(5):327-334 (2003). [Scroll to Abstract] · University ofSao Paulo (Brazil)/University of Paderborn (Germany)/State University of Campinas (Brazil). "Strain-induced ordering in InxGa1-xN alloys." LK Teles, LG Ferreira, JR Leite, LMR Scolfaro, A Kharchenko, O Husberg, DJ As, D Schikora, and K Lischka, in Applied Physics Letters, 82(24):4274-4276 (2003). [ Abstract] · University of Strathclyde (UK)/Institute of Materials Research & Engineering (Singapore). "Mechanism of enhanced light output efficiency in InGaN-based microlight emitting diodes." HW Choi, CW Jeon, MD Dawson, PR Edwards, RW Martin , and S Tripath, in Journal of Applied Physics, 93(10): 5978-5982 (2003). [ Abstract] · University of WSP (Poland)/University of Technology (Poland). "New approach for calculation of the GaxAl1-xN solid-state alloys." IV Kityk, in Computational Materials Science, 27(3):342-350 (2003). [ Abstract] · Vilnius State University (Lithuania)/University of South Carolina/Rensselaer Polytechnic Institute/Sensor Electronic Technology Inc. "Exciton and carrier motion in quaternary AlInGaN." K Kazlauskas, G Tamulaitis, A Zukauskas, MA Khan, JY Yang, J Zhang, E Kuokstis, G Simin, MS Shur, and R Gaska, in Applied Physics Letters, 82(25):4501-4503 (2003). [ Abstract] · Virginia Commonwealth University. "Effect of ambient on photoluminescence from GaN grown by molecular-beam epitaxy." MZ Iqbal, MA Reshchikov, L He, and H Morkoc, in Journal of Electronic Materials, 32(5):346-349 (2003). [Scroll to Abstract] · No articles were published in this area during this reporting period. · Beijing University of Technology (China)/Beijing OptoelectronicTechnology Lab (China)/Berg University Gesamthsch Wuppertal (Germany)/UC- Los Angeles. "Thermal property of tunnel-regenerated multiactive-region light-emitting diodes." X Guo, GD Shen, Y Ji, XZ Wang, JY Du, DS Zou, GH Wang, G Gao, LJ Balk, R Heiderhoff, TH Lee, and KL Wang, in Applied Physics Letters, 82(25):4417-4419 (2003). [ Abstract] · Electronics & Telecommunications Research Institute (South Korea )/Hynix Semiconductor Industry Co. Ltd. (South Korea). "Selective silicon growth on nitride for silicon-plugging process in LPCVD." WS Cheong, SK Lee, and JS Roh, in Journal of Crystal Growth, 254(3-4):329-335 (2003). [ Abstract] · Forschungszentrum Rossendorf eV (Germany). "Group-IV nanoduster formation by ion-beam synthesis." W Skorupa , L Rebohle, and T Gebel, in Applied Physics A-Materials Science & Processing, 76(7):1049-1059 (2003). [ Abstract] · Kumamoto University (Japan). "Photo-excited photonic characteristics of ZnO thin films deposited by laser ablation method." T Ohshima, T Ikegami, K Ebihara, and RK Thareja, in Electrical Engineering in Japan, 144(3):1-7 (2003). [ Abstract] · Science Expt Production Center VEI (Russia)/Special Design Off Photodevices & Light Signals De (Russia). "LED-based aviation obstruction lights."YG Basov and VV Sysun, in Journal of Optical Technology, 70(5):354-357 (2003). [ Abstract] · Tokyo University of Agriculture and Technology (Japan). "A solid-state light-emitting device based on ballistic electron excitation using an inorganic material as a fluorescent film." Y Nakajima, H Toyama, A Kojima, and N Koshida, in Physica Status Solidi A-Applied Research, 197(2):316-320 (2003). [ Abstract] · University of Bari (Italy)/Politecn Bari (Italy). "Experimental determination of the temperature distribution in trench-confined oxide vertical-cavity surface-emitting lasers." M Dabbicco, V Spagnolo, M Ferrara , and G Scamarcio, in IEEE Journal of Quantum Electronics, 39(6):701-707 (2003). [ Abstract] · Zhejiang University (China)/Hong Kong University of Science & Technology ( China ). "Time-resolved photoluminescence study of a ZnO thin film grown on a (100) silicon substrate." B Guo, ZZ Ye, and KS Wong, in Journal of Crystal Growth, 253(1-4):252-257 (2003). [ Abstract] · MRS Bulletin. "III-V nitrides: A new age for optoelectropics." A Hangleiter, in MRS Bulletin, 28(5):350-353 (2003). [ Abstract] · Osram Opto Semiconductors GmbH (Germany). "Violet and blue laser diodes make strides." V Harle, A Lell, and J Wagner, in Photonics Spectra, 37(6):66-70 (2003). [URL not available] · Slovak Technical University (Slovakia). "Advanced light emitting diodes structures for optoelectronic applications." J Kovac, L Peternai, and O Lengyel, in Thin Solid Films, 433(1-2):22-26 (2003). [ Abstract] |
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