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ISSUE 16: SCIENTIFIC LITERATURE (December 2002- Mid-March 2003) |
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From the Technical Literature The material in this section is selected from scientific and technical papers that became available during the reporting time period. Links to online abstracts are provided. Most online abstracts are freely accessible to the public. A few require journal subscriptions or memberships, and are noted as such. The technical literature section is roughly organized by subject area and, within subjects, alphabetically by institution of the lead author. Use the links below to go directly to a section.
A. Materials and Device Fabrication B. Materials and Device Design Properties A. Materials and Device Fabrication · AF Ioffe Physical-Technical Institute (Russia). "Bulk gallium nitride: preparation and study of properties." Y ZHILYAEV, A NASONOV, S RAEVSKI, S RODIN, M SHCHEGLOV, and V DAVYDOV, in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2003, 195(1):122-126. [ Abstract] · AF Ioffe Physical-Technical Institute (Russia) / Institute of Problems of Mechanical Engineering (Russia) / Stankin Moscow State University of Technology (Russia). "Radiationless recombination mechanisms in GaN surface layers determined from photoluminescence." V BESSOLOV, V EVSTROPOV, A FRADKOV, V FEDIRKO, M KOMPAN, E KONENKOVA, and Y ZHILYAEV, in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2003, 195(1):106-111. [ Abstract] · Aristotle University of Thessaloniki (Greece) / Humboldt University (Germany) / Institute of Geological & Nuclear Sciences Ltd (New Zealand). "NEXAFS and AFM characterization of Si implanted GaN." M KATSIKINI, F PINAKIDOU, N VOUROUTZIS, R MITDANK, A MARKWITZ, and E PALOURA, in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2003, 200:120-125. [Click on Volume 200 , then scroll to Abstract] · ATMI Inc. / Wichita State University. "Growth and characterization of low defect GaN by hydride vapor phase epitaxy." XP XU, RP VAUDO, C LORIA, A SALANT, GR BRANDES, and J CHAUDHURI, in Journal of Crystal Growth, 2002, 246(3-4):223-229. . [Click on Volume 246 Issues 3-4 then scroll to Abstract] · Austrian Academy of Sciences (Austria) / University of Leoben (Austria) / Infineon Technologies AG (Germany). "Temperature dependence of stresses in GaN/AlN/6H-SiC(0001) structures: correlation between AlN buffer thickness and intrinsic stresses in GaN." J KECKES, G KOBLMUELLER, and R AVERBECK, in Journal of Crystal Growth, 2002, 246(1-2):73-77. [Click on Volume 246 Issues 1-2 , then scroll to Abstract] · Boston University / SVT Associates. "Multisubband photoluminescence in p-type modulation-doped AlxGa1-xN/GaN superlattices." E WALDRON, E SCHUBERT, and A DABIRAN, in PHYSICAL REVIEW B, 2003, 6704(4):5327. [ Abstract ] · CEA Grenoble (France) / University of Grenoble (France). "Surfactant effect of In for AlGaN growth by plasma-assisted molecular beam epitaxy." E MONROY, B DAUDIN, E BELLET-AMALRIC, N GOGNEAU, D JALABERT, F ENJALBERT, J BRAULT, J BARJON, and L DANG, in JOURNAL OF APPLIED PHYSICS, 2003, 93(3):1550-1556. [ Abstract ] · CFD Research Corporation. "Does the ring compound [(CH3)(2)GaNH2](3) form during MOVPE of gallium nitride? Investigations via density functional and reaction rate theories." D SENGUPTA, in JOURNAL OF PHYSICAL CHEMISTRY B, 2003, 107(1):291-297. [ Abstract ] · Chalmers University of Technology (Sweden) / University of Gothenburg (Sweden) / Paul Drude Institute Festkorperelekt (Germany). "Characterization of the GaN/GaAs/GaN structure grown by molecular beam epitaxy." H KIM, T ANDERSSON, J CHAUVEAU, and A TRAMPERT, in SOLID-STATE ELECTRONICS, 2003, 47(3):539-542. [Click on Volume 47 Issue 3 , then scroll to Abstract] · Chinese Academy of Sciences (China). "Optimization of cubic GaN growth by metalorganic chemical vapor deposition based on residual strain relaxation." Z FENG, H YANG, X ZHENG, Y FU, Y SUN, X SHEN, and Y WANG, in APPLIED PHYSICS LETTERS, 2003, 82(2):206-208. [ Abstract ] · Chinese Academy of Sciences (China). "Crystallographic tilt in GaN layers grown by epitaxial lateral overgrowth." G FENG, XH ZHENG, JJ ZHU, XM SHEN, BS ZHANG, DG ZHAO, YP SUN, ZH ZHANG , YT WANG, H YANG, and JW LIANG, in Science in China Series a-Mathematics Physics Astronomy, 2002, 45(11):1461-1467. [Abstract not available] · Chinese Academy of Sciences (China) . "Structural characterization of epitaxial lateral overgrown GaN on patterned GaN/GaAs(001) substrates." XM SHEN, Y FU, G FENG, BS ZHANG, ZH FENG, YT WANG, and H YANG, in Journal of Crystal Growth, 2002, 246(1-2):69-72. [Click on Volume 246 Issues 1-2, then scroll to Abstract] · Chinese Academy of Sciences (China). "The growth morphologies of GaN layer on Si(111) substrate." Y LU, X LIU, D LU, H YUAN, G HU, X WANG, Z WANG, and X DUAN, in JOURNAL OF CRYSTAL GROWTH, 2003, 247(1-2):91-98. [Click on Volume 247 Issues 1-2 then scroll to Abstract] · Chinese Academy of Sciences (China) / Hong Kong University of Science & Technology (China). "Growth temperature effect on the optical and material properties of AlxInyGa1-x-yN epilayers grown by MOCVD." J HUANG, X DONG, X LUO, D LI, X LIU, Z XU, and W GE, in JOURNAL OF CRYSTAL GROWTH, 2003, 247(1-2):84-90. [Click on Volume 247 Issues 1-2 then scroll to Abstract] · Chonbuk National University (South Korea). "Numerical analysis for the growth of GaN layer in MOCVD reactor." C SHIN, B BAEK, C LEE, B PAK, J YOON, and K PARK, in JOURNAL OF CRYSTAL GROWTH, 2003, 247(3-4):301-312. [Click on Volume 247 Issues 3-4 then scroll to Abstract] · Chonbuk National University (South Korea). "Growth and characterization of In0.28Ga0.72N/GaN multiple-quantum wells on Si(111)." S LEE, S JANG, S LEE, and C LEE, in JOURNAL OF CRYSTAL GROWTH, 2003 , 249(1-2):65-71. [Click on Volume 249 Issues 1-2 then scroll to Abstract] · CNRS (France). "High-Al-content crack-free AlGaN/GaN Bragg mirrors grown by molecular-beam epitaxy." F NATALI, D BYRNE, A DUSSAIGNE, N GRANDJEAN, J MASSIES, and B DAMILANO, in APPLIED PHYSICS LETTERS, 2003, 82(4):499-501. [ Abstract] · CNRS (France) / CEA (France). "Interfacial strain in 3C-SiC/Si(100) pseudo-substrates for cubic nitride epitaxy." E BUSTARRET, D VOBORNIK, A ROULOT, T CHASSAGNE, G FERRO, Y MONTEIL, E MARTINEZ-GUERRERO, H MARIETTE, B DAUDIN, and L DANG, in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2003, 195(1):18-25. [ Abstract ] · CNRS (France) / Otto von Guericke University (Germany) / Research Institute for Technical Physics & Materials Science (Hungary). "Epitaxial lateral overgrowth of GaN on Si (111)." E FELTIN, B BEAUMONT, P VENNEGUES, M VAILLE, P GIBART, T RIEMANN, J CHRISTEN, L DOBOS, and B PECZ, in JOURNAL OF APPLIED PHYSICS, 2003, 93(1):182-185. [ Abstract] · CNRS (France) / University of Montpellier 2 (France) / University of Warsaw (Poland) / Polish Academy of Sciences (Poland). "Residual donors in wurtzite GaN homoepitaxial layers and heterostructures." G NEU, M TEISSEIRE-DONINELLI, C MORHAIN, F SEMOND, N GRANDJEAN, B BEAUMONT, E FRAYSSINET, W KNAP, A WITOWSKI, M SADOWSKI, M LESZCZYNSKI, and P PRYSTAWKO, in PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2003, 235(1):20-25. [ Abstract ] · CUNY Brooklyn College / Emcore Corporation / CUNY Graduate School & University Center. "Micro-Raman investigation of thin lateral epitaxial overgrown GaN/sapphire(0001) films." VV CHALDYSHEV, FH POLLAK, M POPHRISTIC, SP GUO, and I FERGUSON, in Journal of Applied Physics, 2002, 92(11):6601-6606. [ Abstract] · Dankook University (South Korea) / Dongguk University (South Korea) / Wuhan University (China). "Optical characteristics of Mn+ -ion-implanted GaN epilayers." Y SHON, YH KWON, TW KANG, X FAN, D FU, and Y KIM, in Journal of Crystal Growth, 2002, 245(3-4):193-197. [Click on Volume 245 Issues 3-4 then scroll to Abstract] · Eindhoven University of Technology (Netherlands) / University of Nijmegen (Netherlands). "Influence of selective GaN islands on optical properties of GaN films grown on sapphire substrate." S HAFFOUZ, P HAGEMAN, V KIRILYUK, L MACHT, J WEYHER, and P LARSEN, in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2003, 97(1):9-12. [Click on Volume 97 Issue 1 , then scroll to Abstract] · Eindhoven University of Technology (Netherlands) / University of Nijmegen (Netherlands) / CNRS (France) / Technical University of Delft (Netherlands). "Structural properties of maskless epitaxial lateral overgrown MOCVD GaN layers on Si (111) substrates." S HAFFOUZ, A GRZEGORCZYK, P HAGEMAN, P VENNEGUES, E VAN DER DRIFT, and P LARSEN, in JOURNAL OF CRYSTAL GROWTH, 2003, 248:568-572 . [Click on Volume 248 then scroll to abstract] · Faculté des Sciences (Tunisia) / CNRS (France). "Silicon effect on GaN surface morphology." Z BENZARTI, I HALIDOU, O TOTTEREAU, T BOUFADEN, and B EL JANI, in Microelectronics Journal, 2002, 33(11):995-998. [Click on Volume 33 Issue 11, then scroll to Abstract] · Feng Chia University (Taiwan). "Observation of compositional pulling phenomenon in AlxGa1-xN (0.4 < x < 1.0) films grown on (0001) sapphire substrates." Y TSAI, C WANG, P LIN, W LIAO, and J GONG, in APPLIED PHYSICS LETTERS, 2003, 82(1):31-33. [ Abstract ] · Feng Chia University (Taiwan). "Growth and characterization of GaN and AlN films on (111) and (001) Si substrates." J GONG, M YEH, and C WANG, in JOURNAL OF CRYSTAL GROWTH, 2003, 247(3-4):261-268 . [ Click on Volume 247 Issues 3-4 then scroll to Abstract ] · Feng Chia University (Taiwan). "Strain-induced effect on the Al incorporation in AlGaN films and the properties of AlGaN/GaN heterostructures grown by metalorganic chemical vapor deposition." J GONG, W LIAO, S HSIEH, P LIN, and Y TSAI, in JOURNAL OF CRYSTAL GROWTH, 2003, 249(1-2):28-36. [Click on Volume 249 Issues 1-2 then scroll to Abstract] · Forschungszentrum Rossendorf eV (Germany) . "AlN growth kinetics during ion nitriding of aluminum." T FITZ and W MOLLER, in Journal of Applied Physics, 2002, 92(11):6862-6867. [ Abstract] · Ghent University (Belgium) / University of Antwerp (Belgium) / IMEC (Belgium) / Fund for Scientific Research (Belgium) . "Effect of growth interrupt and growth rate on MOVPE-grown InGaN/GaN MQW structures." K JACOBS, B VAN DAELE, M LEYS, I MOERMAN, and G VAN TENDELOO, in JOURNAL OF CRYSTAL GROWTH, 2003, 248:498-502. [Click on Volume 248 then scroll to Abstract] · Hanyang University (South Korea) / Korea Research Institute of Standards & Science (South Korea) / Chonbuk National University (South Korea). "Catalytic synthesis and photoluminescence of gallium nitride nanowires." S LYU, O CHA, E SUH, H RUH, H LEE, and C LEE, in CHEMICAL PHYSICS LETTERS, 2003, 367(1-2):136-140. [Click on Volume 367 Issues 1-2 then scroll to Abstract] · Helsinki University of Technology (Finland) / US Naval Research Laboratory. "Ga vacancies and grain boundaries in GaN." J OILA, K SAARINEN, A WICKENDEN, D KOLESKE, R HENRY, and M TWIGG, in APPLIED PHYSICS LETTERS, 2003, 82(7):1021-1023. [ Abstract] · Institute of Chemical Problems Microelectronic (Russia) / Corning Applied Technologies / University of Florida / RAS (Russia) / Institute of Rare Metals (Russia). "New type of defects related to nonuniform distribution of compensating centers in p-GaN films." A POLYAKOV, A GOVORKOV, N SMIRNOV, N SHMIDT, S PEARTON, and A OSINSKY, in SOLID-STATE ELECTRONICS, 2003, 47(1):51-56 . [Click on Volume 47 Issue 1 , then scroll to Abstract] · Institute of Materials Research & Engineering (Singapore). "Comparative investigation of photoluminescence of In- and Si- doped GaN/AlGaN multi-quantum wells." L WANG, W SUN, S CHUA, and M JOHNSON, in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2003, 97(2):196-199. [Click on Volume 97 Issue 2, then scroll to Abstract] · Institute Superior Tecnico (Portugal) / Bulgarian Academy of Sciences (Bulgaria) / University of Aveiro (Portugal) / University of Giessen (Germany). "Characterisation of GaN films grown on sapphire by low-temperature cyclic pulsed laser deposition/nitrogen rf plasma." P SANGUINO, M NIEHUS, L MELO, R SCHWARZ, S KOYNOV, T MONTEIRO, J SOARES, H ALVES, and B MEYER, in SOLID-STATE ELECTRONICS, 2003, 47(3):559-563. [Click on Volume 47 Issue 3, then scroll to Abstract] · Institute Superior Tecnico (Portugal) / University of Aveiro (Portugal) / ISEL (Portugal) / Bulgarian Academy of Sciences (Bulgaria). "Optical properties and transport in PLD-GaN." M NIEHUS, P SANGUINO, T MONTEIRO, M SOARES, E PEREIRA, M VIEIRA, S KOYNOV, and R SCHWARZ, in SOLID-STATE ELECTRONICS, 2003, 47(3):569-573. [Click on Volume 47 Issue 3, then scroll to Abstract] · Jawaharlal Nehru Center for Advanced Scientific Research (India) / Indian Institute of Science (India) . "Epitaxial GaN films deposited on sapphire substrates prepared by the sol-gel method." K SARDAR, A RAJU, and G SUBBANNA, in SOLID STATE COMMUNICATIONS, 2003, 125(6):355-358. [Click on Volume 125 Issue 6, then scroll to Abstract] · Johannes Kepler University (Austria) / Johannes Kepler University (Austria) / Upper Austrian Research GMBH (Austria) / Profactor GMBH (Austria). "In situ spectroscopic ellipsometry of MOCVD-grown GaN compounds for on-line composition determination and growth control." A BONANNI, D STIFTER, A MONTAIGNE-RAMIL, K SCHMIDEGG, K HINGERL, and H SITTER, in JOURNAL OF CRYSTAL GROWTH, 2003, 248:211-215. [Click on Volume 248 then scroll to abstract] · Kanagawa University (Japan) / Meijo University (Japan). "Electrical and crystalline properties of as-grown p-type GaN grown by metalorganic vapor phase epitaxy." S YAMAGUCHI, Y IWAMURA, Y WATANABE, M KOSAKI, Y YUKAWA, S NITTA, S KAMIYAMA, H AMANO, and I AKASAKI, in JOURNAL OF CRYSTAL GROWTH, 2003, 248:503-506. [Click on Volume 248 then scroll to abstract] · Kansas State University / Wichita State University / University of Bristol (England). "Bulk AlN crystal growth: self-seeding and seeding on 6H-SiC substrates." JH EDGAR, L LIU, B LIU, D ZHUANG, J CHAUDHURI, M KUBALL, and S RAJASINGAM, in Journal of Crystal Growth, 2002, 246(3-4):187-193. [Click on Volume 246 Issues 3-4 then scroll to Abstract] · King Fahd University of Petroleum & Minerals (Saudi Arabia) / University of Texas / US Army Research Laboratory / Sandia National Laboratories / US Navy Research Laboratory. "Electroreflectance of hexagonal gallium nitride at the fundamental and E-1 spectral regions." M AL-KUHAILI, R GLOSSER, A WICKENDEN, D KOLESKE, and R HENRY, in APPLIED PHYSICS LETTERS, 2003, 82(8):1203-1205. [ Abstract] · Kwangju Institute of Science & Technology (South Korea). "Growth of self-assembled nanosize InGaN/GaN multiple quantum wells embedded in amorphous SiNx by metalorganic vapor phase epitaxy." Y MOON, D KIM, J PARK, J OH, Y KIM, N PARK, B KIM, and S PARK, in JOURNAL OF CRYSTAL GROWTH, 2003, 248:494-497. [Click on Volume 248 then scroll to Abstract] · Kyoto University (Japan) / Waseda University (Japan). "Optical properties of Si-, Ge- and Sn-doped GaN." A SHIKANAI, H FUKAHORI, Y KAWAKAMI, K HAZU, T SOTA, T MITANI, T MUKAI, and S FUJITA, in PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2003, 235(1):26-30. [ Abstract] · Linkoping University (Sweden) / AIXTRON AG (Germany). "Lattice parameters of GaN layers grown on a-plane sapphire: Effect of in-plane strain anisotropy." V DARAKCHIEVA, P PASKOV, T PASKOVA, E VALCHEVA, B MONEMAR, and M HEUKEN, in APPLIED PHYSICS LETTERS, 2003, 82(5):703-705. [ Abstract] · Linkoping University (Sweden) / Chalmers University of Technology (Sweden) . "Growth and separation related, properties of HVPE-GaN free-standing films." T PASKOVA, V DARAKCHIEVA, P PASKOV, U SODERVALL, and B MONEMAR, in Journal of Crystal Growth, 2002, 246(3-4): 207-214. [Click on Volume 246 Issues 3-4 then scroll to abstract] · Macquarie University (Australia) / Polish Academy of Sciences (Poland) / U S Naval Research Laboratory. "Recrystallization prospects for freestanding low-temperature GaN grown using ZnO buffer layers." KSA BUTCHER, P AFIFUDDIN, PT CHEN, M GODLEWSKI, A SZCZERBAKOW, EM GOLDYS, TL TANSLEY, and JA FREITAS, in Journal of Crystal Growth, 2002, 246(3-4):237-243. [Click on Volume 246 Issues 3-4 then scroll to Abstract] · Max Planck Institute of Metals Research (Germany) / University of California-Santa Barbara. "Microstructural evolution of precursor-derived gallium nitride thin films." M PUCHINGER, DJ KISAILUS, FF LANGE, and T WAGNER, in Journal of Crystal Growth, 2002, 245(3-4):219-227. [Click on Volume 245 Issues 3-4 then scroll to Abstract] · Mie University (Japan). "Epitaxial lateral overgrowth of GaN on selected-area Si(111) substrate with nitrided Si mask." H NAOI, M NARUKAWA, H MIYAKE, and K HIRAMATSU, in JOURNAL OF CRYSTAL GROWTH, 2003, 248:573-577. [Click on Volume 248 then scroll to Abstract] · Msila University (Algeria). "Elastic properties of AlxGa1-xAsySb1-y lattice matched to different substrates." N BOUARISSA and R BACHIRI, in MATERIALS CHEMISTRY AND PHYSICS, 2003, 78(1):271-277. [Click on Volume 78 Issue 1, then scroll to abstract] · Nanjing University (China) / University of Wisconsin. "Investigation of dislocations and defects in epitaxial lateral overgrown GaN by photoelectrochemical wet etching." F WANG, R ZHANG, X XIU, K CHEN, S GU, B SHEN, Y ZHENG, and T KUECH, in MATERIALS LETTERS, 2003, 57(8):1365-1368. [Click on Volume 57 Issue 8 then scroll to abstract] · Nanyang Technological University (Singapore). "Microstructure evolution of AlN films deposited under various pressures by RF reactive sputtering." H CHENG, Y SUN, and P HING, in SURFACE & COATINGS TECHNOLOGY, 2003, 166(2-3):231-236. [Click on Volume 166 Issues 2-3, then scroll to abstract] · National Center University (Taiwan) / Nano-Architect Research Corp. (Taiwan) / Nichia Corp. (Japan). "GaN diffractive microlenses fabricated with gray-level mask." C CHEN, M LI, C CHANG, J SHEU, G CHI, W CHENG, J YEH, J CHANG, and T ITO, in OPTICS COMMUNICATIONS, 2003, 215(1-3):75-78. [Click on Volume 215 Issues 1-3, then scroll to abstract] · National Center University (Taiwan) / Saha Institute of Nuclear Physics (India). "Er diffusion into gallium nitride." C CHEN, Y TING, C LEE, G CHI, P CHAKRABORTY, T CHINI, H CHUANG, J TSANG, C KUO, W TSAI, S CHEN, and J CHYI, in SOLID-STATE ELECTRONICS, 2003, 47(3):529-531. [Click on Volume 47 Issue 3 · National Cheng Kung University (Taiwan) / Southern Taiwan University of Technology (Taiwan) / Chinese Academy of Sciences (China) / National Yunlin University of Science & Technology (Taiwan). "Growth of nanoscale InGaN self-assembled quantum dots." L JI, Y SU, S CHANG, L WU, T FANG, J CHEN, T TSAI, Q XUE, and S CHEN, in JOURNAL OF CRYSTAL GROWTH, 2003, 249(1-2):144-148. . [Click on Volume 249 Issues 1-2 then scroll to Abstract] · National Institute for Materials Science (Japan) / Max Planck Institute of Metals Research (Germany) / DLR (Germany). "Growth and microstructural characterizations of GaN films grown by laser induced reactive epitaxy." H ZHOU, T RUPP, F PHILLIPP, G HENN, M GROSS, A RUHM, and H SCHRODER, in JOURNAL OF APPLIED PHYSICS, 2003, 93(4):1933-1940. [ Abstract] · National Institute for Materials Science (Japan) / Yokohama National University (Japan) / SNT Company Ltd. (South Korea). "Morphology-retaining synthesis of AlN particles by gas reduction-nitridation." T SUEHIRO, J TATAMI, T MEGURO, S MATSUO, and K KOMEYA, in Materials Letters, 2002, 57(4):910-913. [Click on Volume 57 Issue 4 then scroll to abstract] · National Institute of Advanced Industrial Science & Technology (Japan). "Strain relaxation correlated with the transport properties of AlN/GaN heterostructure grown by plasma-assisted molecular-beam epitaxy." K JEGANATHAN, T IDE, M SHIMIZU, and H OKUMURA, in JOURNAL OF APPLIED PHYSICS, 2003, 93(4):2047-2050. [ Abstract] · National Research Council Canada. "In situ Mg surface treatment of p-type GaN grown by ammonia-molecular-beam epitaxy for efficient Ohmic contact formation." H TANG , J BARDWELL, J WEBB, S ROLFE, Y LIU, S MOISA, and I SPROULE, in APPLIED PHYSICS LETTERS, 2003, 82(5):736-738. [ Abstract] · National Research Council Canada. "Properties of 1.3 mu m InGaNAs laser material grown by MBE using a N-2/Ar RF plasma." J GUPTA, P BARRIOS, G AERS, R WILLIAMS, J RAMSEY, and Z WASILEWSKI, in SOLID-STATE ELECTRONICS, 2003, 47(3):399-405. [Click on Volume 47 Issue 3 , then scroll to Abstract] · Optronix Inc (South Korea) / Korea Research Institute of Standards & Science (South Korea) . "Gas-phase parasitic reactions and Al incorporation of AlGaN growth using TPIS-MOCVD." S KIM, J SEO, K LEE, H LEE, and K PARK, in Journal of the Korean Physical Society, 2002, 41(5): 726-731. [ Abstract] · Optronix Inc ( South Korea) / Korea Research Institute of Standards & Science (South Korea) . "Growth of AlGaN epilayers related gas-phase reactions using TPIS-MOCVD." S KIM, J SEO, K LEE, H LEE, K PARK, Y KIM, and CS KIM, in Journal of Crystal Growth, 2002, 245(3-4):247-253. [Click on Volume 245 Issues 3-4 then scroll to Abstract] · Optronix Inc. (South Korea) / Korea Research Institute of Standards & Science (South Korea). "Effects of barrier growth temperature on the properties of InGaN/GaN multi-quantum wells." S KIM, K LEE, K PARK, and C KIM, in JOURNAL OF CRYSTAL GROWTH, 2003, 247(1-2):62-68. [Click on Volume 247 Issues 1-2 then scroll to Abstract] · Optronix Inc. (South Korea) / Korea Research Institute of Standards & Science (South Korea) / Seoul National University (South Korea). "The influence of ammonia pre-heating to InGaN films grown by TPIS-MOCVD ." S KIM, K LEE, H LEE, K PARK, C KIM, S SON, and K YI, in JOURNAL OF CRYSTAL GROWTH, 2003, 247(1-2):55-61. [Click on Volume 247 Issues 1-2 then scroll to Abstract] · Otto Von Guericke University (Germany). "Electrical microcharacterization of dislocation-related charges in GaN-based single layers by scanning probe microscopy techniques." A KRTSCHIL, A DADGAR, and A KROST, in JOURNAL OF CRYSTAL GROWTH, 2003, 248:542-547. [Click on Volume 248 then scroll to Abstract] · Otto Von Guericke University (Germany). "Efficient stress relief in GaN heteroepitaxy on Si(111) using low-temperature AlN interlayers." A REIHER, J BLASING, A DADGAR, A DIEZ, and A KROST, in JOURNAL OF CRYSTAL GROWTH, 2003, 248:563-567. [Click on Volume 248 then scroll to Abstract] · Otto Von Guericke University (Germany) / Arizona State University / University of Ulm (Germany) / Global Light Industries GmbH (Germany) / National Autonomy University of Mexico. "MOVPE growth of GaN on Si(111) substrates." A DADGAR, M POSCHENRIEDER, J BLASING, O CONTRERAS, F BERTRAM, T RIEMANN, A REIHER , M KUNZE, I DAUMILLER, A KRTSCHIL , A DIEZ, A KALUZA, A MODLICH, M KAMP, J CHRISTEN, F PONCE, E KOHN, and A KROST, in JOURNAL OF CRYSTAL GROWTH, 2003, 248:556-562. [Click on Volume 248 then scroll to Abstract] · PAS (Poland) / Catholic University of Nijmegen (Netherlands). "Directional crystallization of GaN on high-pressure solution grown substrates by growth from solution and HVPE." M BOCKOWSKI, I GRZEGORY, S KRUKOWSKI, B LUCZNIK, Z ROMANOWSKI, M WROBLEWSKI, J BORYSIUK, J WEYHER, P HAGEMAN, and S POROWSKI, in Journal of Crystal Growth, 2002, 246(3-4): 194-206. [Click on Volume 246 Issues 3-4 then scroll to abstract] · Paul Drude Institute Festkorperelekt (Germany) / University of California-Santa Barbara. "Nonpolar InxGa1-xN/GaN(1(1)over-bar-00) multiple quantum wells grown on gamma-LiAlO2(100) by plasma-assisted molecular-beam epitaxy." Y SUN, O BRANDT, S CRONENBERG, S DHAR, H GRAHN, K PLOOG, P WALTEREIT, and J SPECK, in PHYSICAL REVIEW B, 2003, 6704(4):1306. [ Abstract] · Polish Academy of Sciences (Poland) / University of Nijmegen (Netherlands) / Warsaw University of Technology (Poland) . "Defect-selective etching of GaN in a modified molten bases system." G KAMLER, JL WEYHER, I GRZEGORY, E JEZIERSKA, and T WOSINSKI, in Journal of Crystal Growth, 2002, 246(1-2):21-24. [Click on Volume 246 Issues 1-2, then scroll to Abstract] · Qinetiq (England). "Modelling of high temperature optical constants and surface roughness evolution during MOVPE growth of GaN using in-situ spectral reflectometry." RS BALMER, C PICKERING, AJ PIDDUCK, and T MARTIN, in Journal of Crystal Growth, 2002, 245(3-4):198-206. [Click on Volume 245 Issues 3-4 then scroll to Abstract] · Rensselaer Polytechnic Institute / Crystal IS Inc. / Delphi Research Labs / US Naval Research Laboratory. "Some effects of oxygen impurities on AlN and GaN." GA SLACK, LJ SCHOWALTER, D MORELLI, and JA FREITAS, in Journal of Crystal Growth, 2002, 246(3-4):287-298. [Click on Volume 246 Issues 3-4 then scroll to Abstract] · Rhein Westfal TH Aachen (Germany) / AIXTRON AG (Germany) . "Investigation of buffer growth temperatures for MOVPE of GaN on Si(111)." Y DIKME, G GERSTENBRANDT, A ALAM, H KALISCH, A SZYMAKOWSKI, M FIEGER, R JANSEN, and M HEUKEN, in JOURNAL OF CRYSTAL GROWTH, 2003, 248:578-582. [Click on Volume 248 then scroll to Abstract] · Russian Academy of Sciences (Russia). "Study of absorption spectra of Er3+ ions in GaN crystals." V KRIVOLAPCHUK, M MEZDROGINA, S RAEVSKII, A SKVORTSOV, S YUSUPOVA, and Y ZHILYAEV, in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2003, 195(1):112-115. [ Abstract] · Russian Academy of Sciences (Russia) / All Russian Electronic Engineering Institute (Russia) / University of South Carolina. "Carrier mobility model for GaN." T MNATSAKANOV, M LEVINSHTEIN, L POMORTSEVA, S YURKOV, G SIMIN, and M KHAN, in SOLID-STATE ELECTRONICS, 2003, 47(1):111-115. [Click on Volume 47 Issue 1 , then scroll to Abstract] · Sandia National Laboratories. "Drift, diffusion, and trapping of hydrogen in p-type GaN." CH SEAGER, SM MYERS, AF WRIGHT, DD KOLESKE, and AA ALLERMAN, in Journal of Applied Physics, 2002, 92(12): 7246-7252. [ Abstract] · Sandia National Laboratories / Lumileds Lighting. "Role of carbon in GaN." CH SEAGER , AF WRIGHT, J YU, and W GOTZ, in Journal of Applied Physics, 2002, 92(11):6553-6560. [ Abstract] · Sensor Electronic Technology Inc. / University of South Carolina / Rensselaer Polytechnic Institute / Crystal IS Inc. / Vilnius University (Lithuania). "Deep-ultraviolet emission of AlGaN/AlN quantum wells on bulk AlN." R GASKA, C CHEN, J YANG, E KUOKSTIS, A KHAN, G TAMULAITIS, I YILMAZ, MS SHUR, JC ROJO, and LJ SCHOWALTER, in Applied Physics Letters, 2002, 81(24):4658-4660. [ Abstract] · Seoul National University (South Korea) / Samsung Advanced Institute of Technology (South Korea). "Arsenic incorporation and growth mode of GaNAs grown by low-pressure metal-organic chemical vapor deposition." H NA, H KIM, E YOON, C SONE, and Y PARK, in JOURNAL OF CRYSTAL GROWTH, 2003, 248:437-440. [Click on Volume 248 then scroll to Abstract] · Shandong University (China) / Forschungszentrum Julich GMBH KFA (Germany). "Lattice damage induced by Tb-implanted AlN crystalline films." F LU, H HU, and A RIZZI, in APPLIED SURFACE SCIENCE, 2003, 205(1-4):262-266. [Click on Volume 205 Issues 1-4, then scroll to abstract] · Shandong University (China) / Huaguang Optoelectronics Ltd (China). "MOCVD growth of strain-compensated multi-quantum wells light emitting diode." Y YU, X QIN, B HUANG, J WEI, H ZHOU, J PAN, W CHEN, Y QI, X ZHANG, and Z REN, in VACUUM, 2003, 69(4):489-493. [Click on Volume 69 Issue 4, then scroll to abstract] · Shandong University (China) / Shandong Normal University (China). " Characterization of GaN films grown on silicon (111) substrates." Y YANG, H MA, C XUE, X HAO, H ZHUANG, and J MA, in PHYSICA B-CONDENSED MATTER, 2003, 325(1-4):230-234. [Click on Volume 325 Issues 1-4, then scroll to abstract] · Soft Impact Ltd (Russia). "Advances in the modeling of MOVPE processes." S KARPOV, in JOURNAL OF CRYSTAL GROWTH, 2003, 248:1-7. [Click on Volume 248 then scroll to Abstract] · Sung Kyun Kwan University (South Korea) / Samsung Advanced Institute of Technology (South Korea). "A study of GaN etching characteristics using HBr-based inductively coupled plasmas." D KIM, C JEONG, H LEE, H KIM, Y SUNG, and G YEOM, in SOLID-STATE ELECTRONICS, 2003, 47(3):549-552. [Click on Volume 47 Issue 3 , then scroll to Abstract] · Tampere University of Technology (Finland). "Enhanced optical and structural properties of strain-compensated 1.3-mu m GaInNAs/GaNAs/GaAs quantum-well structures by insertion of strain-mediating layers." E PAVELESCU, C PENG, T JOUHTI, J KONTTINEN, M DUMITRESCU, W LI, and M PESSA, in SOLID-STATE ELECTRONICS, 2003, 47(3):507-512. [Click on Volume 47 Issue 3, then scroll to Abstract] · Technical University of Berlin (Germany) / Max Planck Institute Mikrostrukturforsch (Germany). "Alternative-precursor metalorganic chemical vapor deposition of self-organized InGaAs/GaAs quantum dots and quantum-dot lasers." R SELLIN, I KAIANDER, D OUYANG, T KETTLER, U POHL, D BIMBERG, N ZAKHAROV, and P WERNER, in APPLIED PHYSICS LETTERS, 2003, 82(6):841-843. [ Abstract] · Technical University of Carolo Wilhelmina Braunschweig (Germany) / Otto Von Guericke University (Germany) / PTB (Germany). "Influence of low-temperature interlayers on strain and defect density of epitaxial GaN layers." U ROSSOW, F HITZEL, N RIEDEL, S LAHMANN, J BLASING, A KROST, G ADE, P HINZE, and A HANGLEITER, in JOURNAL OF CRYSTAL GROWTH, 2003, 248:528-532. [Click on Volume 248 then scroll to Abstract] · Technical University of Munich (Germany). "AlN/diamond heterojunction diodes." C MISKYS, J GARRIDO, C NEBEL, M HERMANN, O AMBACHER, M EICKHOFF, and M STUTZMANN, in APPLIED PHYSICS LETTERS, 2003, 82(2):290-292. [Abstract] · Thales Research & Technology (France) / University of Lille 1 (France) / NOVASiC (France). "LPMOCVD growth of GaN on silicon carbide." M DI FORTE-POISSON, A ROMANN, M TORDJMAN, M MAGIS, J DI PERSIO, C JACQUES, and P VICENTE, in JOURNAL OF CRYSTAL GROWTH, 2003, 248:533-536. [Click on Volume 248 then scroll to Abstract] · Thomas Swan Scientific Equipment Ltd (England) / University of Cambridge (England) / UMIST (England). "GaN/InGaN quantum wells grown in a close coupled showerhead reactor." E THRUSH, M KAPPERS, P DAWSON, M VICKERS, J BARNARD, D GRAHAM, G MAKARONIDIS, F RAYMENT, L CONSIDINE, and C HUMPHREYS, in JOURNAL OF CRYSTAL GROWTH, 2003, 248:518-522. [Click on Volume 248 then scroll to Abstract] · Tokyo Institute of Technology (Japan) / Japan Science & Technology Corp. (Japan). "Degenerate p-type conductivity in wide-gap LaCuOS1-xSex (x=0-1) epitaxial films." H HIRAMATSU, K UEDA, H OHTA, M HIRANO, T KAMIYA, and H HOSONO, in APPLIED PHYSICS LETTERS, 2003, 82(7):1048-1050. [ Abstract] · Tokyo Metropolitan College of Technology (Japan) / National Taiwan University (Taiwan) / FEI Company Japan / Industrial Technology Research Institute (Taiwan) / Tokyo University of Science (Japan) / Kanazawa Medical University (Japan) / Kyoto Institute of Technology (Japan). "Formation and structure of inverted hexagonal pyramid defects in multiple quantum wells InGaN/GaN." K WATANABE, J YANG, S HUANG, K INOKE, J HSU, R TU, T YAMAZAKI, N NAKANISHI, and M SHIOJIRI, in APPLIED PHYSICS LETTERS, 2003, 82(5):718-720. [ Abstract] · Tokyo University of Agriculture & Technology (Japan) / Tomoe Shokai Company Ltd. (Japan) . "Thick and high-quality GaN growth on GaAs (111) substrates for preparation of freestanding GaN." Y KUMAGAI, H MURAKAMIA, H SEKI, and A KOUKITU, in Journal of Crystal Growth, 2002, 246(3-4):215-222. [Click on Volume 246 Issues 3-4 then scroll to Abstract] · Tokyo University of Agriculture & Technology (Japan) / Tomoe Shokai Company Ltd. (Japan). "Influence of substrate polarity on the low-temperature GaN buffer layer growth on GaAs (111)A and (111)B surfaces." H MURAKAMI, Y KUMAGAI, H SEKI, and A KOUKITU, in JOURNAL OF CRYSTAL GROWTH, 2003, 247(3-4):245-250. [Click on Volume 247 Issues 3-4 then scroll to Abstract] · Unipress (Poland) / University of J Fourier Grenoble 1 (France) / National Institute for Advanced Industrial Science & Technology (Japan) / University of Tsukuba (Japan). "Light emission versus energy gap in group-III nitrides: hydrostatic pressure studies." T SUSKI, H TEISSEYRE, S LEPKOWSKI, P PERLIN, H MARIETTE, T KITAMURA, Y ISHIDA, H OKUMURA, and S CHICHIBU, in PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2003, 235(2):225-231. [ Abstract] · University of Bath (England). "Optically detected magnetic resonance of paired defects in as-grown magnesium-doped GaN." J DAVIES, G ALIEV, S BINGHAM, D WOLVERSON, S STEPANOV, B YAVICH, and W WANG, in PHYSICAL REVIEW B, 2003, 6703(3):5203. [ Abstract] · University of California-Berkeley-Lawrence Berkeley Laboratory. "Comparison between structural properties of bulk GaN grown in liquid Ga under high N pressure and GaN grown by other methods." Z LIHENTAL-WEBER, J JASINSKI, and J WASHBURN, in Journal of Crystal Growth, 2002, 246(3-4):259-270. [Click on Volume 246 Issues 3-4 then scroll to Abstract] · University of California-Berkeley / Lawrence Berkeley National Laboratory / University of Hong Kong (China). "Evidence for a type-II band alignment between cubic and hexagonal phases of GaN." X LU, P YU, L ZHENG, S XU, M XIE, and S TONG, in APPLIED PHYSICS LETTERS, 2003, 82(7):1033-1035. [ Abstract] · University of California-Santa Barbara . "The role of growth conditions on the p-doping of GaN by plasma-assisted molecular beam epitaxy." E HAUS, IP SMORCHKOVA, B HEYING, P FINI, C POBLENZ, T MATES, UK MISHRA, and JS SPECK, in Journal of Crystal Growth, 2002, 246(1-2):55-63. [Click on Volume 246 Issues 1-2, then scroll to Abstract] · University of California-Santa Barbara. "Growth and characteristics of Fe-doped GaN." S HEIKMAN, S KELLER, T MATES, S DENBAARS, and U MISHRA, in JOURNAL OF CRYSTAL GROWTH, 2003, 248:513-517 . [Click on Volume 248 then scroll to Abstract] · University of California-Santa Barbara. "GaN nanocrystals from oxygen and nitrogen-based precursors." D KISAILUS, J CHOI, and F LANGE, in JOURNAL OF CRYSTAL GROWTH, 2003, 249(1-2):106-120. . [Click on Volume 249 Issues 1-2 then scroll to Abstract] · University of California-Santa Barbara / AF Ioffe Physical-Technical Institute (Russia). "Modeling the extended defect evolution in lateral epitaxial overgrowth of GaN: Subgrain stability." A ROMANOV, P FINI, and J SPECK, in JOURNAL OF APPLIED PHYSICS, 2003, 93(1):106-114. [ Abstract] · University of Dublin Trinity College (Ireland) / Dublin City University (Ireland). "Pulsed laser deposition of manganese doped GaN thin films." D O'MAHONY, J LUNNEY, G TOBIN, and E MCGLYNN, in SOLID-STATE ELECTRONICS, 2003, 47(3):533-537. [Click on Volume 47 Issue 3, then scroll to Abstract] · University of Erlangen Nurnberg (Germany) / University of Freiburg (Germany). "Pyramidal-plane ordering in AlGaN alloys." M BENAMARA, L KIRSTE, M ALBRECHT, K BENZ, and H STRUNK, in APPLIED PHYSICS LETTERS, 2003, 82(4):547-549. [ Abstract] · University of Hong Kong (China) / Chinese Academy of Sciences (China). "Comparative study on the broadening of exciton luminescence linewidth due to phonon in zinc-blende and wurtzite GaN epilayers." SJ XU, LX ZHENG, SH CHEUNG, MH XIE, SY TONG, and H YANG, in Applied Physics Letters, 2002, 81(23):4389-4391. [ Abstract] · University of Leipzig (Germany) / Institute Oberflachenmodifizierung eV (Germany) / Linkoping University (Sweden). "Infrared dielectric functions and phonon modes of high-quality ZnO films." N ASHKENOV, B MBENKUM, C BUNDESMANN, V RIEDE, M LORENZ, D SPEMANN, E KAIDASHEV, A KASIC, M SCHUBERT, M GRUNDMANN, G WAGNER, H NEUMANN, V DARAKCHIEVA, H ARWIN, and B MONEMAR, in JOURNAL OF APPLIED PHYSICS, 2003, 93(1):126-133. [ Abstract] · University of Liverpool (England) . "Effect of increased nitrogen incorporation on the growth of GaInNAs/GaAs." T BULLOUGH, S DAVIES, S THOMAS, T JOYCE, and P CHALKER, in SOLID-STATE ELECTRONICS, 2003, 47(3):407-412. [Click on Volume 47 Issue 3, then scroll to Abstract] · University of Liverpool (England) / University of Sheffield (England). "Orientation of cracks in AlGaN epilayers with sapphire substrates." R MURRAY, P PARBROOK, and D WOOD, in JOURNAL OF MATERIALS SCIENCE LETTERS, 2003, 22(2):113-114. [ TOC (Reader must be a Kluweronline subscriber or purchase the full text article)] · University of Magdeburg (Germany). "Reduction of stress at the initial stages of GaN growth on Si(111)." A DADGAR, M POSCHENRIEDER, A REIHER, J BLASING, J CHRISTEN, A KRTSCHIL, T FINGER, T HEMPEL, A DIEZ, and A KROST, in APPLIED PHYSICS LETTERS, 2003 , 82(1):28-30. [ Abstract] · University of Magdeburg (Germany) / Hahn Meitner Institute of Kernforsch Berlin (Germany) / Technical University of Berlin (Germany) / University of Bremen (Germany). "Stress analysis of AlxGa1-xN films with microcracks." D RUDLOFF, T RIEMANN, J CHRISTEN, Q LIU, A KASCHNER, A HOFFMANN, C THOMSEN, K VOGELER, M DIESSELBERG, S EINFELDT, and D HOMMEL, in APPLIED PHYSICS LETTERS, 2003, 82(3):367-369. [ Abstract] · University of Magdeburg (Germany) / Mochem GMBH (Germany). "Metalorganic chemical vapor phase deposition of ZnO with different O-precursors." N OLEYNIK, M ADAM, A KRTSCHIL, J BLASING, A DADGAR, F BERTRAM, D FORSTER, A DIEZ, A GREILING, M SEIP, J CHRISTEN, and A KROST, in JOURNAL OF CRYSTAL GROWTH, 2003, 248:14-19. [Click on Volume 248 then scroll to Abstract] · University of Magdeburg (Germany) / University of Augsburg (Germany) / University of Leipzig (Germany). "Electrical field effect of H-implantation induced defect states in GaN." A KRTSCHIL, A KIELBURG, H WITTE, A KROST, J CHRISTEN, A WENZEL, and B RAUSCHENBACH, in APPLIED PHYSICS LETTERS, 2003, 82(3):403-405. [ Abstract] · University of Manchester (England) / National Research Council Canada / University of Limerick (Ireland). "Anodic oxidation of gallium nitride." A PAKES, P SKELDON, G THOMPSON, J FRASER, S MOISA, G SPROULE, M GRAHAM, and S NEWCOMB, in JOURNAL OF MATERIALS SCIENCE, 2003, 38(2):343-349. [ TOC ( Reader must be a Kluweronline subscriber or purchase the full text article)] · University of Nottingham. "Bismuth a new dopant for GaN films grown by molecular beam epitaxy-surfactant effects, formation of GaN1-xBix alloys and co-doping with arsenic." S NOVIKOV, A WINSER, T LI, R CAMPION, I HARRISON, and C FOXON, in JOURNAL OF CRYSTAL GROWTH, 2003, 247(1-2):35-41. [Click on Volume 247 Issues 1-2 then scroll to Abstract] · University of Reims (France) / CNRS (France). "Cathodoluminescence study of the excitons localization in AlGaN/GaN and InGaN/GaN quantum wells grown on sapphire." J BUBENDORFF, N GRANDJEAN, B DAMILANO, and M TROYON, in JOURNAL OF CRYSTAL GROWTH, 2003, 247(3-4):284-290. [Click on Volume 247 Issues 3-4 then scroll to Abstract] · University of Shizuoka (Japan) . "GaN crystal growth on an SiC substrate from Ga wetting solution reacting with NH3." A TANAKA, Y FUNAYAMA, T MURAKAMI, and H KATSUNO, in JOURNAL OF CRYSTAL GROWTH, 2003, 249(1-2):59-64. . [Click on Volume 249 Issues 1-2 then scroll to Abstract] · University of Shizuoka (Japan) / Meijo University (Japan). "Systematic analysis and control of low-temperature GaN buffer layers on sapphire substrates." M SUMIYA, N OGUSU, Y YOTSUDA, M ITOH, S FUKE, T NAKAMURA, S MOCHIZUKI, T SANO, S KAMIYAMA, H AMANO, and I AKASAKI, in JOURNAL OF APPLIED PHYSICS, 2003, 93(2):1311-1319. [ Abstract] · University of South Carolina. "Pulsed atomic-layer epitaxy of ultrahigh-quality AlxGa1-xN structures for deep ultraviolet emissions below 230 nm." JP ZHANG, MA KHAN, WH SUN, HM WANG, CQ CHEN, Q FAREED, E KUOKSTIS, and JW YANG, in Applied Physics Letters, 2002 , 81(23):4392-4394. [ Abstract] · University of Southern California / NASA-Ames Research Center . "Controlled growth of gallium nitride single-crystal nanowires using a chemical vapor deposition method." S HAN, W JIN, T TANG, C LI, D ZHANG, X LIU, J HAN, and C ZHOU, in JOURNAL OF MATERIALS RESEARCH, 2003, 18(2):245-249. [ Abstract] · University of Stuttgart (Germany). "Investigations about series resistance of MOVPE grown GaN laser structures." F SCHOLZ, G MOUTCHNIK, V DUMITRU, R HARLE, and H SCHWEIZER, in JOURNAL OF CRYSTAL GROWTH, 2003, 248:507-512. [Click on Volume 248 then scroll to Abstract] · University of Texas. "AlGaN/AlGaN UV light-emitting diodes grown on sapphire by metalorganic chemical vapor deposition." T ZHU, U CHOWDHURY, J DENYSZYN, M WONG, and R DUPUIS, in JOURNAL OF CRYSTAL GROWTH, 2003, 248:548-551. [Click on Volume 248 then scroll to Abstract] · University of Tokushima (Japan). "GaN growth using a low-temperature GaNP buffer on sapphire by metalorganic chemical vapor deposition." M TSUKIHARA, Y NAOI, S SAKAI, and H LI, in APPLIED PHYSICS LETTERS, 2003, 82(6):919-921. [ Abstract] · University of Tsukuba (Japan) / JST (Japan) / Waseda University (Japan) / University of California-Santa Barbara / National Institute of Advanced Industrial Science & Technology (Japan). "Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic InxGa1-xN/GaN multiple quantum wells." S CHICHIBU, T ONUMA, T SOTA, S DENBAARS, S NAKAMURA, T KITAMURA, Y ISHIDA, and H OKUMURA, in JOURNAL OF APPLIED PHYSICS, 2003, 93(4):2051-2054. [ Abstract] · University of Valencia (Spain) / Technical University of Munich (Germany). "Study of inversion domain pyramids formed during the GaN : Mg growth." G MARTINEZ-CRIADO, A CROS, A CANTARERO, N JOSHI, O AMBACHER, and M STUTZMANN, in SOLID-STATE ELECTRONICS, 2003 , 47(3):565-568. [Click on Volume 47 Issue 3 , then scroll to Abstract] · University of Wisconsin. "A (10x10) domain wall structure induced by Mn adsorption on the pseudo-(1x1) surface of GaN(0001)." Y CUI and L LI, in SURFACE SCIENCE, 2003, 522(1-3):L21-L26. [Click on Volume 522 Issues 1-3 then scroll to abstract] · Uppsala University (Sweden). "Influence of deposition parameters on the stress of magnetron sputter-deposited AlN thin films on Si(100) substrates." G IRIARTE, F ENGELMARK, M OTTOSSON, and I KATARDJIEV, in JOURNAL OF MATERIALS RESEARCH, 2003, 18(2):423-432. [ Abstract] · US Naval Research Laboratory / SFA Inc. / Samsung Advanced Institute of Technology (South Korea) . "Donors in hydride-vapor-phase epitaxial GaN." JA FREITAS, WJ MOORE, BV SHANABROOK, GCB BRAGA, SK LEE, SS PARK, JY HAN, and DD KOLESKE, in Journal of Crystal Growth, 2002, 246(3-4):307-314. [Click on Volume 246 Issues 3-4 then scroll to Abstract] · Virginia Commonwealth University / SUNY Albany. "Growth of GaN films on porous SiC substrate by molecular-beam epitaxy." F YUN, MA RESHCHIKOV, L HE, H MORKOC, CK INOKI, and TS KUAN, in Applied Physics Letters, 2002, 81(22):4142-4144. [ Abstract] · West Virginia University / Howard University / US Naval Research Laboratory / Technology & Devices International Inc. "Use of high temperature hydrogen annealing to remove sub-surface damage in bulk GaN." TH MYERS, BL VANMIL, LJ HOLBERT, CY PENG, CD STINESPRING, J ALAM, JA FREITAS, VA DMITRIEV, A PECHNIKOV, Y SHAPOVALOVA, and V IVANTSOV, in Journal of Crystal Growth, 2002, 246(3-4):244-251. [Click on Volume 246 Issues 3-4 then scroll to Abstract] · Wroclaw University of Technology (Poland). "Influence of crystallographic structure on electrical characteristics of (Al, Ga)N epitaxial layers grown by MOVPE method." R PASZKIEWICZ, B PASZKIEWICZ, J KOZLOWSKI, M PIASECKI, W KOSNIKOWSKI, and M TLACZALA, in JOURNAL OF CRYSTAL GROWTH, 2003, 248:487-493. [Click on Volume 248 then scroll to Abstract] · Xerox Corp. / Max Planck Gesellschaft (Germany) / Paul Drude Institute Festkorperelekt (Germany). "Structure and energetics of nitride surfaces under MOCVD growth conditions." C VAN DE WALLE and J NEUGEBAUER, in JOURNAL OF CRYSTAL GROWTH, 2003, 248:8-13. [Click on Volume 248 then scroll to Abstract] B. Materials and Device Design Properties · Anna University (India). "XRD, XPS, SEM, PL and Raman scattering analysis of synthesised GaN powder." M KUMAR and J KUMAR, in MATERIALS CHEMISTRY AND PHYSICS, 2003, 77(2):341-345. [Click on Volume 77 Issue 2, then scroll to abstract] · Arizona State Univeristy / Tohoku University (Japan) / Cornell University. "Optical characterization of bulk GaN grown by a Na-Ga melt technique." BJ SKROMME , K PALLE, CD POWELEIT, H YAMANE, M AOKI, and FJ DISALVO, in Journal of Crystal Growth, 2002, 246(3-4):299-306. [Click on Volume 246 Issues 3-4 then scroll to Abstract] · Arizona State University / Meijo University (Japan) / University of Bristol (England). "Light emission and microstructure of Mg-doped AlGaN grown on patterned sapphire." A BELL, R LIU, F PONCE, H AMANO, I AKASAKI, and D CHERNS, in APPLIED PHYSICS LETTERS, 2003, 82(3):349-351. [ Abstract] · Atofina Chemical Research & Development / Northwestern University. "Acceptors in undoped GaN studied by transient photo luminescence." R KOROTKOV, M RESHCHIKOV, and B WESSELS, in PHYSICA B-CONDENSED MATTER, 2003, 325(1-4):1-7. [Click on Volume 325 Issues 1-4 then scroll to abstract] · Bede Scientific Instruments Limited (England) / University of Durham (England). "Direct measurement of twist mosaic in epitaxial GaN." T LAFFORD, P RYAN, D JOYCE, M GOORSKY, and B TANNER, in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2003, 195(1):265-270. [ Abstract] · California Institute of Technology / Kyoto University (Japan) / Matsushita Electric Industrial Co. Ltd (Japan). "Nonradiative recombination processes of carriers in InGaN/GaN probed by the microscopic transient lens spectroscopy." K OKAMOTO, K INOUE, Y KAWAKAMI, S FUJITA, M TERAZIMA, A TSUJIMURA, and I KIDOGUCHI, in REVIEW OF SCIENTIFIC INSTRUMENTS, 2003, 74(1):575-577. [ Abstract] · Chinese Academy of Sciences (China). "Luminescence study of (11(2)over-bar0) GaN film grown by metalorganic chemical-vapor deposition." Z CHEN, D LU, X LIU, X WANG, P HAN, D WANG, H YUAN, Z WANG, G LI, and Z FANG, in JOURNAL OF APPLIED PHYSICS, 2003, 93(1):316-319. [ Abstract] · Chinese Academy of Sciences (China). "Structural and optical properties of InAlGaN films grown directly on low-temperature buffer layer with (0001)sapphire substrate." D LI, X DONG, J HUANG, X LIU, Z XU, X WANG, Z ZHANG, and Z WANG, in JOURNAL OF CRYSTAL GROWTH, 2003, 249(1-2):72-77. . [Click on Volume 249 Issues 1-2 then scroll to Abstract] · Chinese Academy of Sciences (China) / North China Research Institute Electro-Optics (China). "Compact high-power blue light from a diode-pumped intracavity-doubled Nd : YAG laser." DH LI, PX LI, ZG ZHANG, and SW ZHANG, in Chinese Physics Letters, 2002, 19(11): 1632-1634. [ Abstract] · CSIC (Spain) / Universidad Politecnica de Madrid (Spain) / CNRS (France) / Technical University of Munich (Germany) / University of Nancy (France). "Hypersonic characterization of sound propagation velocity in AlxGa1-xN thin films." RJJ RIOBOO , E RODRIGUEZ-CANAS, M VILA, C PRIETO, F CALLE, T PALACIOS, MA SANCHEZ, F OMNES, O AMBACHER, B ASSOUAR, and O ELMAZRIA, in Journal of Applied Physics, 2002, 92(11):6868-6874. [ Abstract] · Dankook University (South Korea) / Samsung SDI (South Korea). "Optical properties of three-band white light emitting diodes." Y HUH, J SHIM, Y KIM, and Y DO, in JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2003, 150(2):H57-H60. [ Abstract] · DuPont Company Inc. "Elucidation of the structure of a highly efficient blue electroluminescent material." A MIDDLETON, W MARSHALL, and N RADU, in JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2003, 125(4):880-881. [Must be an ACS subscriber to view abstract] · ENSCP (France) / University of Paris (France) / Center Rech Heteroepitaxie & Applicat (France). "Electrocrystallization of epitaxial zinc oxide onto gallium nitride." T PAUPORTE, R CORTES, M FROMENT, B BEAUMONT, and D LINCOT, in Chemistry of Materials, 2002, 14(11): 4702-4708. [Must be an ACS subscriber to view abstract] · Furukawa Electric Corp. Ltd. (Japan). "Electroluminescence studies under forward and reverse bias conditions of a nitride-rich GaN(1-x)P(x)SQW structure LED grown by laser-assisted metal-organic chemical vapor deposition." J KIKAWA, S YOSHIDA, and Y ITOH, in SOLID-STATE ELECTRONICS, 2003, 47(3):523-527. [Click on Volume 47 Issue 3 , then scroll to Abstract] · General Electric Company / Kansas State University. "Investigation of radiative tunneling in GaN/InGaN single quantum well light-emitting diodes." XA CAO, SF LEBOEUF, KH KIM, PM SANDVIK, EB STOKES, A EBONG, D WALKER, J KRETCHMER, JY LIN, and HX JIANG, in Solid-State Electronics, 2002, 46(12): 2291-2294. [Click on Volume 46 Issue 12 , then scroll to Abstract] · Hungarian Academy of Sciences (Hungary). "Transmission electron microscopy of wide band-gap semiconductor layers." B PECZ, in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2003, 195(1):214-221. [ Abstract] · Jawaharlal Nehru Center for Advanced Scientific Research (India) / Indian Institute of Science (India) . "Magnetic, optical and transport properties of GaMnN films." K SARDAR, A RAJU, B BANSAL, V VENKATARAMAN, and C RAO, in SOLID STATE COMMUNICATIONS, 2003, 125(1):55-57. [Click on Volume 125 Issue 1, then scroll to Abstract] · Korea Research Institute of Chemical Technology (South Korea) / Chungnam National University (South Korea). "Improved photoluminescence of Sr-5(PO4)(3)Cl : Eu2+ phosphor particles prepared by flame spray pyrolysis." Y KANG, J SOHN, H YOON, K JUNG, and H PARK, in JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2003, 150(2):H38-H42. [ Abstract] · Max Planck Gesellschaft (Germany) / Palo Alto Research Center / Carnegie Mellon University. "Adatom kinetics on and below the surface: The existence of a new diffusion channel - art. no. 056101." J NEUGEBAUER, T ZYWIETZ, M SCHEFFLER, J NORTHRUP, H CHEN, and R FEENSTRA, in PHYSICAL REVIEW LETTERS, 2003, 90(5):056101-6101. [ Abstract] · National Academy of Sciences (Ukraine). "Small metal (Au) particles on semiconductor (GaAs) surface." N DMITRUK, T BARLAS, O KONDRATENKO, and V ROMANYUK, in MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, 2003, 23(1-2):159-164. [Click on Volume 23 Issues 1-2 , then scroll to abstract] · National Central University (Taiwan) / National Cheng Kung University (Taiwan) / South Epitaxy Corp. (Taiwan) / Nantex Industry Co. (Taiwan). "White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors." J SHEU , S CHANG, C KUO, Y SU, L WU, Y LIN, W LAI, J TSAI, G CHI, and R WU, in IEEE PHOTONICS TECHNOLOGY LETTERS, 2003, 15(1):18-20. [Available to IEEE member subscribers, see publications page online.] · National Cheng Kung University (Taiwan) / Epitech Technology Corporation Ltd. (Taiwan). "Titanium nitride as spreading layers for AlGaInP visible LEDs." CC LIU, WT WANG, MP HOUNG, YH WANG, and SM CHEN, in IEEE Photonics Technology Letters, 2002, 14(12):1665-1667. [Available to IEEE member subscribers, see publications page online.] · National Renewable Energy Laboratory (NREL). "Biaxial strain-modified valence and conduction band offsets of zinc-blende GaN, GaP, GaAs, InN, InP, and InAs, and optical bowing of strained epitaxial InGaN alloys." PRC KENT, GLW HART, and A ZUNGER, in Applied Physics Letters, 2002, 81(23):4377-4379. [ Abstract] · Nippon Telegraph & Telephone Public Corp. (Japan). "Current-confining structure of InGaN hexagonal microfacet lasers by selective incorporation of Mg during selective-area MOVPE." T AKASAKA, S ANDO, T NISHIDA, T SAITOH, and N KOBAYASHI, in JOURNAL OF CRYSTAL GROWTH, 2003, 248:537-541. [Click on Volume 248 then scroll to Abstract] · Nippon Telegraph & Telephone Public Corp. (Japan) / NEL Technosupport (Japan) . "GaN-free transparent ultraviolet light-emitting diodes." T NISHIDA, N KOBAYASHI, and T BAN, in APPLIED PHYSICS LETTERS, 2003, 82(1):1-3. [ Abstract] · North Carolina State University. "Piezoresponse force microscopy for piezoelectric measurements of III-nitride materials." BJ RODRIGUEZ, A GRUVERMAN, AI KINGON, and RJ NEMANICH, in Journal of Crystal Growth, 2002, 246(3-4):252-258. [Click on Volume 246 Issues 3-4 then scroll to Abstract] · Oklahoma State University. "Preparation of nanoparticle coatings on surfaces of complex geometry." M CRISP and N KOTOV, in NANO LETTERS, 2003, 3(2):173-177. [Must be an ACS subscriber to view abstract] · Paul Drude Institute Festkorperelekt (Germany) / University of Strathclyde (Scotland). "Exciton localization and quantum efficiency - A comparative cathodoluminescence study of (In,Ga)N/GaN and GaN/(Al,Ga)N quantum wells." U JAHN, S DHAR, O BRANDT, H GRAHN, K PLOOG, and I WATSON, in JOURNAL OF APPLIED PHYSICS, 2003, 93(2):1048-1053. [ Abstract] · Pohang University of Science & Technology (South Korea) / Korea Advanced Institute of Science & Technology (South Korea). "Microstructural and electrical investigation of low resistance and thermally stable Pd/Ni contact on p-type GaN." H JANG , H CHO, J LEE, and J LEE, in JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2003, 150(3):G212-G215. [ Abstract] · RIKEN (Japan) / Univerity of Tsukuba (Japan) / Japan Science & Technology Corp. (Japan) / Tohoku University (Japan) / Waseda University (Japan) / Tokyo Institute of Technology (Japan) / Combinatorial Materials Exploration & Technology (Japan). "Correlation between the photoluminescence lifetime and defect density in bulk and epitaxial ZnO." T KOIDA, S CHICHIBU, A UEDONO, A TSUKAZAKI, M KAWASAKI, T SOTA, Y SEGAWA, and H KOINUMA, in APPLIED PHYSICS LETTERS, 2003, 82B(4):532-534. [ Abstract] · Sandia National Laboratories. "Comment on "Infrared spectroscopy of Mg-H local vibrational mode in GaN with polarized light"." C SEAGER, in PHYSICAL REVIEW B, 2003, 6703(3):7201. [ Abstract] · Sandia National Laboratories / University of New Mexico / Los Alamos National Laboratory. "Finite element solution of the self-adjoint angular flux equation for coupled electron-photon transport." JL LISCUM-POWELL, AK PRINJA, JE MOREL, and LJ LORENCE, in Nuclear Science and Engineering, 2002, 142(3):270-291. [Scroll to Abstract] · Sony Shiroishi Semiconductor Inc. (Japan). "100-mW kink-free blue-violet laser diodes with low aspect ratio." T ASANO, T TOJYO, T MIZUNO, M TAKEYA, S IKEDA, K SHIBUYA, T HINO, S UCHIDA, and M IKEDA, in IEEE JOURNAL OF QUANTUM ELECTRONICS, 2003, 39(1):135-140. [Available to IEEE member subscribers, see publications page online] · Texas Technical University. "AlN/AlGaInN superlattice light-emitting diodes at 280 nm." G KIPSHIDZE, V KURYATKOV, K ZHU, B BORISOV, M HOLTZ, S NIKISHIN, and H TEMKIN, in JOURNAL OF APPLIED PHYSICS, 2003, 93(3):1363-1366. [ Abstract] · Tokyo University of Agriculture & Technology (Japan). "Surface polarity dependence of decomposition and growth of GaN studied using in situ gravimetric monitoring." A KOUKITU, M MAYUMI, and Y KUMAGAI, in Journal of Crystal Growth, 2002 , 246(3-4):230-236. [Click on Volume 246 Issues 3-4 then scroll to Abstract] · University Estadual de Campinas (Brazil) / University of Sao Paulo (Brazil) / University of Gesamthsch (Germany). "Near band-edge optical properties of cubic GaN." J FERNANDEZ, O NORIEGA, J SOARES, F CERDEIRA, E MENESES, J LEITE, D AS, D SCHIKORA, and K LISCHKA, in SOLID STATE COMMUNICATIONS, 2003, 125(3-4):205-208. [Click on Volume 125 Issues 3-4, then scroll to Abstract] · University of California-Santa Barbara. "Higher efficiency InGaN laser diodes with an improved quantum well capping configuration." M HANSEN, J PIPREK, PM PATTISON, JS SPECK, S NAKAMURA, and SP DENBAARS, in Applied Physics Letters, 2002, 81(22):4275-4277. [ Abstract] · University of Cincinnati. "Selective enhancement of blue electroluminescence from GaN : Tm." D LEE and A STECKL, in APPLIED PHYSICS LETTERS, 2003, 82(1):55-57 . [ Abstract] · University of Cincinnati. "Three-color integration on rare-earth-doped GaN electroluminescent thin films." Y WANG and A STECKL, in APPLIED PHYSICS LETTERS, 2003, 82(4):502-504. [ Abstract] · University of Marburg (Germany) / University of Surrey (England) / National University of Ireland-University College (Ireland). "Monitoring the non-parabolicity of the conduction band in GaN0.018As0.982/GaAs quantum wells." P KLAR, H GRUNING, W HEIMBRODT, J KOCH, W STOLZ, S TOMIC, and E O'REILLY, in SOLID-STATE ELECTRONICS, 2003, 47(3):437-441. [Click on Volume 47 Issue 3 , then scroll to Abstract] · University of Montpellier 2 (France) / Unipress (Poland) / CNRS (France). "High pressure study of the electrical transport phenomena in AlGaN/GaN heterostructures." C CONSEJO, L KONCZEWICZ, S CONTRERAS, B JOUAULT, S LEPKOWSKY, M ZIELINSKI, J ROBERT, P LORENZINI, and Y CORDIER, in PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2003, 235(2):232-237. [ Abstract] · University of South Carolina / Crystal Photonics Inc. "Polarization effects in photoluminescence of C- and M-plane GaN/AlGaN multiple quantum wells." E KUOKSTIS, CQ CHEN, ME GAEVSKI, WH SUN, JW YANG, G SIMIN, MA KHAN, HP MARUSKA, DW HILL, MC CHOU, JJ GALLAGHER, and B CHAI, in Applied Physics Letters, 2002, 81(22):4130-4132. [ Abstract] · University of South Carolina / Rensselaer Polytechnic Institute / Sensor Electronic Technology Inc / Vilnius State University (Lithuania). "Time-resolved electroluminescence of AlGaN-based light-emitting diodes with emission at 285 nm." M SHATALOV, A CHITNIS, V MANDAVILLI, R PACHIPULUSU, J ZHANG, V ADIVARAHAN, S WU, G SIMIN, M KHAN, G TAMULAITIS, A SEREIKA, I YILMAZ, M SHUR, and R GASKA, in APPLIED PHYSICS LETTERS, 2003, 82(2):167-169. [ Abstract] · Wroclaw Technical University (Poland) / University of Wurzburg (Germany). "Optical investigations of InGaAsN/GaAs single quantum well structures." P SITAREK, K RYCZKO, G SEK, J MISIEWICZ, M FISCHER, M REINHARDT, and A FORCHEL, in SOLID-STATE ELECTRONICS, 2003, 47(3):489-492. [Click on Volume 47 Issue 3 , then scroll to Abstract] · Wroclaw University of Technology (Poland) . "Room temperature photoreflectance of different electron concentration GaN epitaxial layers." R KUDRAWIEC, G SEK, J MISIEWICZ, R PASZKIEWICZ, B PASZKIEWICZ, and M TLACZALA, in Materials Science and Engineering B-Solid State Materials for Advanced Technology, 2002, 96(3):284-288. [Click on Volume 96 Issue 3, then scroll to Abstract] C. Packaging and Reliability · KRICT (South Korea) / Yonsei University (South Korea). "White light-emitting diodes of GaN-based Sr2SiO4 : Eu and the luminescent properties." J PARK, M LIM, C KIM, H PARK, J PARK, and S CHOI, in APPLIED PHYSICS LETTERS, 2003, 82(5):683-685. [ Abstract] · Kwangju Institute of Science & Technology (South Korea). "Y3Al5O12 : Ce-0.05 phosphor coatings on gallium nitride for white light emitting diodes." J YUM, S SEO, S LEE, and Y SUNG, in JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2003, 150(2):H47-H52. [ Abstract] · University of Maryland / University of California-Santa Barbara. "A novel method for fabrication of a hybrid optoelectronic packaging platform utilizing passive-active alignment." M DATTA, Z HU, and M DAGENAIS, in IEEE PHOTONICS TECHNOLOGY LETTERS, 2003, 15(2):299-301. [Available to IEEE member subscribers, see publications page online.] D. Other LED Lighting · Academy Sinica (Taiwan) / National Taiwan University (Taiwan) / National Taiwan Normal University (Taiwan). "Enhanced dynamic annealing in Ga+ ion-implanted GaN nanowires." S DHARA, A DATTA, C WU, Z LAN, K CHEN, Y WANG, L CHEN, C HSU, H LIN, and C CHEN, in APPLIED PHYSICS LETTERS, 2003, 82(3):451-453. [ Abstract] · Alcatel R&I (France) / ETSII (Spain) / CNRS (France). "Direct evidence for group III atoms migration in aged 980 nm InGaAs/AlGaAs pump lasers." M BETTIATI, F LARUELLE, M POMMIES, G HALLAIS, J JIMENEZ, M AVELLA, and E RAO, in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH , 2003, 195(1):159-164. [ Abstract] · Chinese Academy of Sciences (China) / North China Research Institute of Electro-Optics (China). "Diode-pumped high-power cw blue laser at 473 nm with a compact three-element cavity." P LI, D LI, Z ZHANG, and S ZHANG, in OPTICS COMMUNICATIONS, 2003, 215(1-3):159-162. [Click on Volume 215 Issues 1-3 than scroll to abstract] · Ferdinand Braun Institute of Hochstfrequenztech (Germany). "MOVPE growth of visible vertical-cavity surface-emitting lasers (VCSELs)." M ZORN, A KNIGGE, U ZEIMER, A KLEIN, H KISSEL, M WEYERS, and G TRANKLE, in JOURNAL OF CRYSTAL GROWTH, 2003, 248:186-193. [Click on Volume 248 then scroll to Abstract] · Institute of Nuclear Technology (Portugal) / University of Aveiro (Portugal) / CERN (Switzerland). "Implantation site of rare earths in single-crystalline ZnO." U WAHL, E RITA, J CORREIA, E ALVES, and J ARAUJO, in APPLIED PHYSICS LETTERS, 2003, 82(8):1173-1175. [ Abstract] · ISL (France). "Modeling of intracavity-pumped quasi-three-level lasers." M SCHELLHORN and A HIRTH, in IEEE Journal of Quantum Electronics, 2002, 38(11):1455-1464. [Available to IEEE member subscribers, see publications page online] · Japan Science & Technology Corporation (Japan) / Tokyo Institute of Technology (Japan). "Fabrication and characterization of heteroepitaxial p-n junction diode composed of wide-gap oxide semiconductors p-ZnRh2O4/n-ZnO." H OHTA, H MIZOGUCHI, M HIRANO, S NARUSHIMA, T KAMIYA, and H HOSONO, in APPLIED PHYSICS LETTERS, 2003, 82(5):823-825. [ Abstract] · Korea Research Institute of Standards & Science (South Korea). "Frequency-stabilized high-power violet laser diode with an ytterbium hollow-cathode lamp." J KIM, C PARK, J YEOM, E KIM, and T YOON, in OPTICS LETTERS, 2003, 28(4):245-247. [ Abstract ] · NTT Corp. (Japan). "Large-tolerant "OptoBump" interface for interchip optical interconnections." Y ISHII and Y ARAI, in ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS, 2003, 86(1):1-8. [ Abstract] · Shandong Normal University (China). "Growth of GaN nanowires by ammoniating Ga2O3 thin films deposited on quartz with radio frequency magnetron sputtering." L YANG, C XUE, C WANG, and H LI, in NANOTECHNOLOGY, 2003, 14(1):50-52. [ Abstract] · Shandong University (China). "Strong visible-light emission of ZnS nanocrystals embedded in sol-gel silica xerogel." P YANG, M LU, C SONG, G ZHOU, Z AI, D XU, D YUAN, and X CHENG, in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2003, 97(2):149-153. [Click on Volume 97 Issue 2, then scroll to Abstract] · TH Darmstadt (Germany). "Spatially correlated light emission from a resonant-cavity light-emitting diode." P KAPPE, J KAISER, and W ELSASSER, in OPTICS LETTERS, 2003, 28(1):49-51. [ Abstract] · Tokyo Institute of Technology (Japan). "Single high-order transverse mode surface-emitting laser with controlled far-field pattern." S SHINADA and F KOYAMA, in IEEE Photonics Technology Letters, 2002, 14(12): 1641-1643. [Available to IEEE member subscribers, see publications page online.] · University of Konstanz (Germany) / University of Dusseldorf (Germany). "All-solid-state tunable continuous-wave ultraviolet source with high spectral purity and frequency stability." H SCHNITZLER, U FROHLICH, TKW BOLEY, AEM CLEMEN, J MLYNEK, A PETERS , and S SCHILLER, in Applied Optics, 2002, 41(33):7000-7005. [ Abstract] E. Review Articles · University of California-Santa Barbara. "Metalorganic chemical vapor deposition of group III nitrides - a discussion of critical issues." S KELLER and S DENBAARS, in JOURNAL OF CRYSTAL GROWTH, 2003, 248:479-486. [Click on Volume 248 then scroll to Abstract] · University of Florida / Seoul National University (South Korea) / University of Florida / Oak Ridge National Laboratory. "Wide band gap ferromagnetic semiconductors and oxides." S PEARTON, C ABERNATHY, M OVERBERG, G THALER, D NORTON, N THEODOROPOULOU, A HEBARD, Y PARK, F REN, J KIM, and L BOATNER, in JOURNAL OF APPLIED PHYSICS, 2003, 93(1):1-13. [ Abstract] |
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