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ISSUE 15: SCIENTIFIC LITERATURE (September - November 2002) |
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From the Technical Literature The material in this section is selected from scientific and technical papers that became available during the reporting time period. Links to online abstracts are provided. Most online abstracts are freely accessible to the public. A few require journal subscriptions or memberships, and are noted as such. The technical literature section is roughly organized by subject area and, within subjects, alphabetically by institution of the lead author. Use the links below to go directly to a section. A. Materials and Device Fabrication B. Materials and Device Design Properties D. Other Semiconductor Lighting A. Materials and Device Fabrication · ALCATEL CIT (France). "Nitride-based long-wavelength lasers on GaAs substrates." F ALEXANDRE, E GOUARDES, O GAUTHIER-LAFAYE, N BOUADMA, A VUONG, and B THEDREZ in JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, Nov. 2002, 13(11):633-642. [ Abstract ] · Austrian Academy of Science (Austria). "Evaluation of growth and thermal strains/stresses in epitaxial thin films using X-ray diffraction." J KECKES in ECRS 6: PROCEEDINGS OF THE 6TH EUROPEAN CONFERENCE ON RESIDUAL STRESSES, 2002, 404-4:697-702. [Abstract not freely available] · Beijing University (China) / Peking University (China). "Effects of Si ion implantation and post-annealing on yellow luminescence from GaN." L DAI, J ZHANG, Y CHEN, G RAN, and G QIN in PHYSICA B, Sept., 2002, 322(1-2):51-56. [ Abstract ] · Carnegie Mellon University / State University of New York - Stony Brook. "A simple mapping method for elementary screw dislocations in homoepitaxial SiC layers." S HA, W VETTER, M DUDLEY, and M SKOWRONSKI in SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3:443-446. [Abstract not freely available] · CEA Grenoble (France) . "GaN islanding by spontaneous rearrangement of a strained two-dimensional layer on (0001) AlN." C ADELMANN, N GOGNEAU, E SARIGIANNIDOU, J ROUVIERE, and B DAUDIN in APPLIED PHYSICS LETTERS, Oct. 14, 2002, 81(16):3064-3066. [ Abstract ] · Chonbuk National University (South Korea) / LG Electronic Institute of Technology (South Korea). "Improvement of structural properties of GaN pendeo-epitaxial layers." H CHEONG, Y HONG, C HONG, Y CHOI, S LEEM, and H LEE in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Aug. 16, 2002, 192(2):377-382. [ Abstract ] · CNRS (France). "RF plasma investigations for plasma-assisted MBE growth of (Ga,In)(As,N) materials." H CARRERE, A ARNOULT, A RICARD, and E BEDEL-PEREIRA in JOURNAL OF CRYSTAL GROWTH, Aug., 2002, 243(2):295-301. [ Abstract] ] · CNRS (France). "Vertical cavity InGaN LEDs grown by MOVPE." MP DE, J BETHOUX, H SCRENK, M VAILLE, E FELTIN, B BEAUMONT, M LEROUX, S DALMASSO, and P GIBART in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Aug. 16, 2002, 192(2):335-340. [ Abstract ] · Dong A University (South Korea) / Chonbuk National University (South Korea). "Generation of misfit dislocations in high indium content InGaN layer grown on GaN." H CHO and G YANG in JOURNAL OF CRYSTAL GROWTH, Aug., 2002, 243(1):124-128.[ Abstract ] · Dong A University (South Korea) / Chonbuk National University (South Korea). "Observation of inversion domain boundaries in Mg-doped AlGaN layers grown by metalorganic chemical vapor deposition." H CHO and G YANG in APPLIED SURFACE SCIENCE, Nov. 15, 2002, 200(1-4):138-142. [ Abstract ] · Dongguk University (South Korea) / Chungbuk National University (South Korea) / Kyung Hee University (South Korea). "Growth and characterization of single-crystal GaN nanorods by hydride vapor phase epitaxy." H KIM, D KIM, D KIM, T KANG, Y CHO, and K CHUNG in APPLIED PHYSICS LETTERS, Sept. 16, 2002, 81(12):2193-2195. [ Abstract ] · Ecole Polytech Fed Lausanne (Switzerland) / Consiglio Nazionale delle Ricerche (CNR) (Italy). "Scaling quantum-dot light-emitting diodes to submicrometer sizes." A FIORE, J CHEN, and M ILEGEMS in APPLIED PHYSICS LETTERS, Sept. 2, 2002, 81(10):1756-1758. [ Abstract ] · Hong Kong Polytechnical University (China). " Study of low-frequency excess noise transport in Ga-face and N-face GaN thin films grown on intermediate-temperature buffer layer by RF-MBE." W FONG, B LEUNG, J XIE, and C SURYA in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Aug. 16, 2002, 192(2):466-471. [ Abstract ] · Howard University / USA Research Labs / NIST. "High-transparency Ni/Au bilayer contacts to n-type GaN." A MOTAYED, A DAVYDOV, L BENDERSKY, M WOOD, M DERENGE, D WANG, K JONES, and S MOHAMMAD in JOURNAL OF APPLIED PHYSICS, Nov. 1, 2002, 92(9):5218-5227. [ Abstract ] · Institu fur Oberflachenmodifizierung (Germany) / University of Augsburg (Germany) / Osram Opto Semiconductors GmbH (Germany). "In-situ stress measurement during the gallium ion implantation-induced doping of nitride." S SIENZ, B RAUSCHENBACH, A WENZEL, A LELL, S BADER, and V HARLE in THIN SOLID FILMS, Aug. 1, 2002, 415(1-2):1-4. [ Abstract ] · Kohgakuin University (Japan) . "Deposition of amorphous GaN by compound source molecular beam epitaxy for electroluminescent devices." T HONDA , Y INAO, K KONNO, K MINEO, S KUMABE, and H KAWANISHI in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Aug. 16, 2002, 192(2):461-465. [ Abstract ] · Kwangju Institute of Science & Technology (South Korea). "Design and fabrication of highly efficient GaN-based light-emitting diodes." H KIM, S PARK, and H HWANG in IEEE TRANSACTIONS ON ELECTRON DEVICES, Oct., l>2002, 49(10):1715-1722. [ Abstract ] · Kyoto Institute of Technology (Japan). "Growth-mode control in sublimation epitaxy of AlN." T FURUSHO and S NISHINO in SENSORS AND MATERIALS, 2002, 14(5):271-279. [ Abstract ] · Kyoto Institute of Technology (Japan) . "Raman scattering from wurtzite GaN bulk crystal." P VERMA and A YAMADA in SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3:1501-1504. [Abstract not freely available] · Kyushu University (Japan) / Ehime University (Japan). "Dynamical control of the chaotic state of the current-driven ion acoustic instability in a laboratory plasma using delayed feedback." T FUKUYAMA, H SHIRAHAMA, and Y KAWAI in PHYSICS OF PLASMAS, Nov., 2002, 9(11):4525-4529. [ Abstract ] · Linkoping University (Sweden) . "Growth of AlN films by hot-wall CVD and sublimation techniques: Effect of growth cell pressure." A KAKANAKOVA-GEORGIEVA, U FORSBERG, B MAGNUSSON, R YAKIMOVA, and E JANZEN in SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3:1469-1472. [Abstract not freely available] · Lucent Technology / Agere Systems . "Dislocation and morphology control during molecular-beam epitaxy of AlGaN/GaN heterostructures directly on sapphire substrates." M MANFRA, N WEIMANN, J HSU, L PFEIFFER, K WEST, and S CHU in APPLIED PHYSICS LETTERS, Aug. 19, 2002, 81(8):1456-1458. [ Abstract ] · Macquarie University (Australia) / Australian National University (Australia) / US Navy . "Crystal size and oxygen segregation for polycrystalline GaN." K BUTCHER, H TIMMERS, AFIFUDDIN, P CHEN, T WEIJERS, E GOLDYS, T TANSLEY, R ELLIMAN, and J FREITAS in JOURNAL OF APPLIED PHYSICS, Sept. 15, 2002, 92(6):3397-3403. [ Abstract ] · Meiji University (Japan) / National Institute of Advanced Industrial Science and Technology (Japan). "Improvement of film quality using Si-doping in AlGaN/GaN heterostructure grown by plasma-assisted molecular beam epitaxy." T IDE, M SHIMIZU, X SHEN, K JEGANATHAN, H OKUMURA, and T NEMOTO in , Nov. 1, 2002, 245(1-2):15-20. [ Abstract ] · Meijo University (Japan). "UV light-emitting diode fabricated on hetero-ELO-grown Al0.22Ga0.78N with low dislocation density." S KAMIYAMA, M IWAYA, S TAKANAMI, S TERAO, A MIYAZAKI, H AMANO, and I AKASAKI in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Aug. 16, 2002, 192(2):296-300. [ Abstract ] · Nagoya Institute of Technology (Japan) / NGK Insulators Ltd. (Japan) . "Growth of high-quality GaN films on epitaxial AlN/sapphire templates by MOVPE." M SAKAI, H ISHIKAWA, T EGAWA, T JIMBO, M UMENO, T SHIBATA, K ASAI, S SUMIYA, Y KURAOKA, M TANAKA, and O ODA in JOURNAL OF CRYSTAL GROWTH, Sept., 2002, 244(1):6-11. [ Abstract ] · Nagoya Institute of Technology (Japan) / Northwestern University. "Crystallographic growth models of wurtzite-type thin films on 6H-SiC." H OHSATO, K WADA, T KATO, C SUN, and M RAZEGHI in SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3:1489-1492. [Abstract not freely available] · Nanjing University (China) / Hong Kong University of Science & Technology (China). "Room-temperature magnetism in Cr-doped AlN semiconductor films." S YANG, A PAKHOMOV, S HUNG, and C WONG in APPLIED PHYSICS LETTERS, Sept. 23, 2002, 81(13):2418-2420. [ Abstract] · Nanyang Technological University (Singapore). "On the effects of secondary phase on thermal conductivity of AlN ceramic substrates using a microstructural modeling approach." F BOEY, A TOK, Y LAM, and S CHEW in MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, Sept. 25, 2002, 335(1-2):281-289. [ Abstract ] · National Center for Photovoltaics . "Incorporation effects in MOCVD-grown (In)GaAsN using different nitrogen precursors." A PTAK, S KURTZ, C CURTIS, R REEDY, and J OLSON in JOURNAL OF CRYSTAL GROWTH, Aug., 2002, 243(2):231-237. [ Abstract ] · National Cheng Kung University (Taiwan). "Low-temperature catalytic synthesis gallium nitride nanowires." K CHANG and J WU in JOURNAL OF PHYSICAL CHEMISTRY B, Aug. 15, 2002, 106(32):7796-7799. [ Reader must be an ACS subscriber or purchase the full text article ] · National Institute of Advanced Industrial Science & Technology (Japan) / Ultralow Loss Power Device Technological Research Body (Japan). "Indium roles on the GaN surface studied directly by reflection high-energy electron diffraction observations." X SHEN, M SHIMIZU, and H OKUMURA in JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, Aug. 1, 2002, 41(8A):L873-L875. [ Abstract ] · National Institute of Advanced Industrial Science & Technology (Japan) / Ultralow Loss Power Device Technological Research Body (Japan) / Meiji University (Japan). "RHEED studies of in effect on the N-polarity GaN surface kinetics modulation in plasma-assisted molecular-beam epitaxy." X SHEN, T IDE, M SHIMIZU, and H OKUMURA in SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3:1461-1464. [Abstract not freely available] · National Microelectronics Research Centre (Ireland). "Fabrication of GaN-Based resonant cavity LEDs." P MAASKANT, M AKHTER, B ROYCROFT, E O'CARROLL, and B CORBETT in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Aug. 16, 2002, 192(2):348-353. [ Abstract ] · National Renewable Energy Laboratory. "Effects of hydrogen on the electronic properties of dilute GaAsN alloys." A JANOTTI, S ZHANG, S WEI, and DWC VAN in PHYSICAL REVIEW LETTERS, Aug. 19, 2002, 8908(8):6403-6403. [ Abstract ] · National Research Council (Canada) / Thales Research and Technology (France) / CNRS (France). "Submicron metal-semiconductor-metal ultraviolet detectors based on AlGaN grown on silicon: Results and simulation ." J DUBOZ, J REVERCHON, D ADAM, B DAMILANO, N GRANDJEAN, F SEMOND, and J MASSIES in JOURNAL OF APPLIED PHYSICS, Nov. 1, 2002, 92(9):5602-5604. [ Abstract ] · National Tsing Hua University (Taiwan) . "Buffer-facilitated epitaxial growth of AlN on Al2O3(0001) at room temperature." Y LIN and S WU in SURFACE SCIENCE, Sept. 20, 2002, 516(3):L535-L539. [ Abstract ] · NEC Corp. Ltd. (Japan). "Reduction of internal loss and threshold current in a laser diode with a ridge by selective re-growth (RiS-LD)." M KURAMOTO, C SASAOKA, N FUTAGAWA, M NIDO, and A YAMAGUCHI in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Aug. 16, 2002, 192(2):329-334. [ Abstract ] · NEC Fundamental Research Labs (Japan) / University of Electrocommunication (Japan). "Atom manipulation using atomic de Broglie waves ." J FUJITA and F SHIMIZU in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, Nov. 1 2002, 96(2):159-163. [ Abstract ] · Nitride Semiconductors Co Ltd (Japan) / University of Tokushima (Japan) . "1 mW AlInGaN-based ultraviolet light-emitting diode with an emission wavelength of 348 nm grown on sapphire substrate." T WANG, Y LIU, Y LEE, J AO, J BAI, and S SAKAI in APPLIED PHYSICS LETTERS, Sept. 30, 2002, 81(14):2508-2510. [ Abstract ] · NTT Corp. (Japan) . "Intentional control of n-type conduction for Si-doped AlN and AlxGa1-xN (0.42 <= x < 1)." Y TANIYASU, M KASU, and N KOBAYASHI in APPLIED PHYSICS LETTERS, Aug. 12, 2002, 81(7):1255-1257. [ Abstract ] · Osaka University (Japan) . "Gas source molecular-beam epitaxy growth of GaN/GaP superlattices and GaN layers on GaP(111)A substrates." K OHNISHI, H TAMPO, Y IMANISHI, K YAMADA, K ASAMI, and H ASAHI in JOURNAL OF CRYSTAL GROWTH, Aug., 2002, 243(2):283-287. [ Abstract ] · Otto Von Guericke University (Germany) / Arizona State University. "Bright, crack-free InGaN/GaN light emitters on Si(111)." A DADGAR, M POSCHENRIEDER, O CONTRERAS, J CHRISTEN, K FEHSE, J BLASING, A DIEZ, F SCHULZE, T RIEMANN, F PONCE, and A KROST in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Aug. 16, 2002, 192(2):308-313. [ Abstract ] · Peking University (China) . "High-quality GaN nanowires synthesized using a CVD approach." J WANG, S FENG, and D YU in APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, Dec., 2002, 75(6):691-693. [ Abstract ] · Polish Academy of Sciences (Poland). "Blue-laser structures grown on bulk GaN crystals." P PRYSTAWKO, R CZERNECKI, M LESZCZYNSKI, P PERLIN, P WISNIEWSKI, L DMOWSKI, H TEISSEYRE, T SUSKI, I GRZEGORY, M BOCKOWSKI, G NOWAK, and S POROWSKI in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Aug. 16, 2002, 192(2):320-324. [ Abstract ] · Pontifícia Universidade Católica do Rio Grande do Sul (PUCRS) (Brazil). "Transition metal nitrides thin films deposition using a dynamically controlled magnetron sputtering apparatus." R HUBLER in SURFACE & COATINGS TECHNOLOGY, Sept., 2002, 158:680-684. [ Abstract ] · Ruhr University of Bochum (Germany). "Morphology controlled growth of arrays of GaN nanopillars and randomly distributed GaN nanowires on sapphire using (N-3)(2)Ga[(CH2)(3)NMe2] as a single molecule precursor." A WOHLFART , A DEVI, E MAILE, and R FISCHER in CHEMICAL COMMUNICATIONS, 2002(9):998-999. Reader must be a subscriber or purchase the full text article · Russian Academy of Sciences (Russia) . "Modification of GaAs(100) and GaN(0001) surfaces by treatment in alcoholic sulfide solutions." E KONENKOVA in VACUUM, Sept. 2, 2002, 67(1):43-52. [ Abstract ] · Sandia National Laboratories . "Gas-phase nanoparticle formation during AlGaN metalorganic vapor phase epitaxy." J CREIGHTON, W BREILAND, M COLTRIN, and R PAWLOWSKI in APPLIED PHYSICS LETTERS, Sept. 30, 2002, 81(14):2626-2628. [ Abstract ] · Sandia National Laboratories . "Improved brightness of 380 nm GaN light emitting diodes through intentional delay of the nucleation island coalescence." D KOLESKE, A FISCHER, A ALLERMAN, C MITCHELL, K CROSS , S KURTZ, J FIGIEL, K FULLMER, and W BREILAND in APPLIED PHYSICS LETTERS, Sept. 9, 2002, 81(11):1940-1942. [ Abstract ] · Sandia National Laboratories . "Minimizing threading dislocations by redirection during cantilever epitaxial growth of GaN." D FOLLSTAEDT, P PROVENCIO, N MISSERT, C MITCHELL, D KOLESKE, A ALLERMAN, and C ASHBY in APPLIED PHYSICS LETTERS, Oct. 7, 2002, 81(15):2758-2760. [ Abstract ] · Sandia National Laboratories. "Substitutional and interstitial carbon in wurtzite GaN." A WRIGHT in JOURNAL OF APPLIED PHYSICS, Sept. 1, 2002, 92(5):2575-2585. [ Abstract ] · Sharp Co. Ltd. (Japan) / Ritsumeikan University (Japan). "Growth and characterization of GaGdN and AlGdN on SiC by RF-MBE." N TERAGUCHI, A SUZUKI, and Y NANISHI in SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3:1477-1480. [Abstract not freely available] · Sheffield Hallam University (England) / University of Barcelona (Spain) / University of Sheffield (England). "Influence of premetallization surface treatment on the formation of Schottky Au-nGaN contacts." T MAFFEIS, M SIMMONDS, S CLARK, F PEIRO, P HAINES, and P PARBROOK in JOURNAL OF APPLIED PHYSICS, Sept. 15, 2002, 92(6):3179-3186. [ Abstract ] · Soft Impact Ltd (Russia) / STR Inc. "Indium segregation kinetics in MOVPE of InGaN-Based heterostructures." S KARPOV, R TALALAEV, I EVSTRATOV, and Y MAKAROV in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Aug. 16, 2002, 192(2):417-423. [ Abstract ] · Sony Shiroishi Semiconductor Inc. (Japan). "High-power AlGaInN lasers." M TAKEYA, T TOJYO, T ASANO, S IKEDA, T MIZUNO, O MATSUMOTO, S GOTO, Y YABUKI, S UCHIDA, and M IKEDA in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Aug. 16, 2002, 192(2):269-276. [ Abstract ] · Sophia University (Japan) / National Central University (Taiwan). "AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy." A KIKUCHI, R BANNAI, K KISHINO, C LEE, and J CHYI in APPLIED PHYSICS LETTERS, Aug. 26, 2002, 81(9):1729-1731. [ Abstract ] · State Electrotech University-St. Petersburg (Russia) . "Aluminium nitride bulk crystals by sublimation method: Growth and X-ray characterization." S DOROZHKIN, A LEBEDEV, A MAXIMOV, and Y TAIROV in SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3:1453-1456. [Abstract not freely available] · Technion Israel Institute of Technology (Israel). "Reduction of cracks in GaN films grown on Si-on-insulator by lateral confined epitaxy." S ZAMIR, B MEYLER, and J SALZMAN in JOURNAL OF CRYSTAL GROWTH, Sept., 2002, 243(3-4):375-380. [ Abstract ] · Texas Technological University / Agere Systems. "Deep ultraviolet AlGaInN-Based light-emitting diodes on Si(111) and sapphire." G KIPSHIDZE, V KURYATKOV, B BORISOV, S NIKISHIN, M HOLTZ, S CHU, and H TEMKIN in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Aug. 16, 2002, 192(2):286-291. [ Abstract ] · Thales Research & Technology (France) / CNRS (France). "GaN epitaxy: How to characterize hazards for the operators." N PROUST, M POISSON, D THENOT, M TORDJMAN , and A PICOT in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Aug. 16, 2002, 192(2):371-376. [ Abstract ] · Thales Research & Technology (France) / University of Lille (France). "Growth optimisation of GaInN/GaN multiple quantum well structures: Application to RCLED devices." F-PM DI, A ROMANN, M TORDJMAN, M MAGIS, and PJ DI in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Aug. 16, 2002, 192(2):435-440. [ Abstract] · Thomas Swan Scientific Equipment Ltd.(England) / University of Cambridge (England) / University of Manchester Institute of Science & Technology (England). "GaN-InGaN quantum well and LED structures grown in a close coupled showerhead (CCS) MOCVD reactor." E THRUSH, M KAPPERS, P DAWSON, D GRAHAM, J BARNARD, M VICKERS, L CONSIDINE, J MULLINS, and C HUMPHREYS in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Aug. 16, 2002, 192(2):354-359. [< Abstract ] · Tokyo Institute of Technology (Japan) / RIKEN (Japan) / Japan Science & Technology (Japan) . "Formation of GaN nanopillars by selective area growth using ammonia gas source molecular beam epitaxy." K KAWASAKI, I NAKAMATSU, H HIRAYAMA, K TSUTSUI, and Y AOYAGI in JOURNAL OF CRYSTAL GROWTH, Aug., 2002, 243(1):129-133. [ Abstract ] · Toyoda Gosei Co. Ltd. (Japan). "Fabrication of LEDs based on III-V nitrides and their applications." N SHIBATA in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Aug. 16, 2002, 192(2):254-260. [ Abstract ] · Toyohashi University of Technology (Japan). "Heteroepitaxial growth of GaN on gamma-Al2O3/Si substrate by organometallic vapor phase epitaxy." A WAKAHARA, N KAWAMURA, H OISHI, H OKADA, A YOSHIDA, and M ISHIDA in SENSORS AND MATERIALS, 2002, 14(5):263-270. [ Abstract ] · University of Bremen (Germany) . "Pyramidal defect formation in view of magnesium segregation." S FIGGE, R KROGER, T BOTTCHER, P RYDER, and D HOMMEL in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Aug. 16, 2002, 192(2):456-460. [ Abstract ] · University of California at Berkeley / Kitami Institute of Technology (Japan). "Lattice-matched HfN buffer layers for epitaxy of GaN on Si." R ARMITAGE, Q YANG, H FEICK, J GEBAUER, E WEBER, S SHINKAI, and K SASAKI in APPLIED PHYSICS LETTERS, Aug. 19, 2002, 81(8):1450-1452. [ Abstract ] · University of California at Santa Barbara . "Chemical solution deposited GaN films from oxygen- and nitrogen-based precursors." D KISAILUS, J CHOI, and F LANGE in JOURNAL OF MATERIALS RESEARCH, Oct., 2002, 17(10):2540-2548. [ Abstract ] · University of California at Santa Barbara. "Impurity incorporation in InGaN grown by rf plasma-assisted molecular beam epitaxy." C POBLENZ, T MATES, M CRAVEN, S DENBAARS, and J SPECK in APPLIED PHYSICS LETTERS, Oct. 7, 2002, 81 (15):2767-2769. [ Abstract ] · University of California at Santa Barbara. "Threading dislocation reduction via laterally overgrown nonpolar (11(2)over-bar0) a-plane GaN." M CRAVEN, S LIM, F WU, J SPECK, and S DENBAARS in APPLIED PHYSICS LETTERS, Aug. 12, 2002, 81(7):1201-1203. [ Abstract ] · University of Florida / Ioffe Institute (Russia) / TCI Inc. "GaN grown by hydride-metal organic vapor phase epitaxy (H-MOVPE) on lattice-matched oxide and silicon substrates." M MASTRO, O KRYLIOUK, T DANN, T ANDERSON, A NIKOLAEV, Y c, and V DMITRIEV in SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3:1473-1476. [Abstract not freely available] · University of Houston . "GaN thin film growth on GaAs (001) by CBE and plasma-assisted MBE." E KIM, I RUSAKOVA, I BERISHEV, A TEMPEZ, and A BENSAOULA in JOURNAL OF CRYSTAL GROWTH, Sept., 2002, 243(3-4):456-462. [ Abstract ] · University of Iowa . "Facile azidothermal metathesis route to gallium nitride nanoparticles." J WANG, L GROCHOLL, and E GILLAN in NANO LETTERS, Aug., 2002, 2(8):899-902. [Must be an ACS subscriber to view abstract ] · University of Magdeburg (Germany). "Bright blue to orange photoluminescence emission from high-quality InGaN/GaN multiple-quantum-wells on Si(111) substrates." M POSCHENRIEDER, F SCHULZE, J BLASING, A DADGAR, A DIEZ, J CHRISTEN, and A KROST in APPLIED PHYSICS LETTERS, Aug. 26, 2002, 81 (9):1591-1593. [ Abstract ] · University of Magdeburg (Germany) . "The origin of stress reduction by low-temperature AlN interlayers." J BLASING, A REIHER, A DADGAR , A DIEZ, and A KROST in APPLIED PHYSICS LETTERS, Oct. 7, 2002, 81(15):2722-2724. [ Abstract ] · University of Montpellier (France) / Technical University of Ilmenau (Germany) / University of Shizuoka (Japan). "Physics of heteroepitaxy and heterophases." P MASRI, J PEZOLDT, M SUMIYA, and M AVEROUS in SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3:379-382. [Abstract not freely available] · University of Nottingham (England) . "Bismuth a new surfactant or contact for GaN films grown by molecular beam epitaxy." C FOXON, S NOVIKOV, T LI, R CAMPION, A WINSER, and I HARRISON in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Aug. 16, 2002, 192(2):441-445. [ Abstract ] · University of Reading (England) / Oslo University College (Norway) / Norwegian University of Science & Technology (Norway). "Organometallic precursors for the formation of GaN by MOCVD: Structural characterization of (CH3)(3)GaNH(CH2CH3)(2) by gas-phase electron diffraction and a initio molecular orbital calculations." K AARSET, C BEER, K HAGEN, E PAGE, and D RICE in JOURNAL OF PHYSICAL CHEMISTRY A, Sept. 19, 2002, 106(37):8762-8768. [ Reader must be an ACS subscriber or purchase the full text article ] · University of Stuttgart (Germany) / Nippon Telegraph & Telephone Public Corp. (Japan) / University of Karlsruhe (Germany). "Initial experiments to obtain self-assembled GaInN quantum islands by MOVPE." V PEREZ-SOLORZANO, Y KOBAYASHI, M JETTER, H SCHWEIZER, F SCHOLZ, E HAHN, and D GERTHSEN in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Aug. 16, 2002, 192(2):412-416. [ Abstract ] · University of Tokushima (Japan) / Nichia Corp. (Japan). "GaN films deposited by planar magnetron sputtering." T KIKUMA, K TOMINAGA, K FURUTANI, K KUSAKA, T HANABUSA, and T MUKAI in VACUUM, Aug. 19, 2002, 66(3-4):233-237. [ Abstract ] · University of Tokyo (Japan) . "Laterally overgrown GaN on patterned GaAs (001) substrates by MOVPE." S SANORPIM, E TAKUMA, K ONABE, H ICHINOSE, and Y SHIRAKI in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Aug. 16, 2002, 192(2):446-452. [ Abstract ] · University of Tokyo (Japan) . "Room-temperature epitaxial growth of AlN films." J OHTA, H FUJIOKA, S ITO, and M OSHIMA in APPLIED PHYSICS LETTERS, Sept. 23, 2002, 81(13):2373-2375. [ Abstract ] · University of Virginia. "Why do dislocations assemble into interfaces in epitaxy as well as in crystal plasticity? To minimize free energy." D KUHLMANN-WILSDORF in METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE, Aug., 2002, 33(8):2519-2539. [Scroll to Abstract ] · University of Wisconsin. "The addition of Sb as a surfactant to GaN growth by metal organic vapor phase epitaxy." L ZHANG, H TANG, J SCHIEKE, M MAVRIKAKIS, and T KUECH in JOURNAL OF APPLIED PHYSICS, Sept. 1, 2002, 92 (5):2304-2309. [ Abstract] · University of Tokushima (Japan). "Effect of sputtering gas pressure and nitrogen concentration on crystal orientation and residual stress in sputtered AlN films." K KUSAKA, D TANIGUCHI, T HANABUSA, and K TOMINAGA in VACUUM, Aug. 19, 2002, 66(3-4):441-446. [ Abstract ] · Virginia Commonwealth University / Evans E / Charles Evans & Associates. "Energy band bowing parameter in AlxGa1-xN alloys." F YUN, M RESHCHIKOV, L HE, T KING, H MORKOC, S NOVAK, and L WEI in JOURNAL OF APPLIED PHYSICS, Oct. 15, 2002, 92(8):4837-4839. [ Abstract ] B. Materials and Device Design Properties · Aoyama Gakuin University (Japan). "Crystallinity and stoichiometry of InNx films deposited by reactive do magnetron sputtering." P SONG, D SATO, M KON, and Y SHIGESATO in VACUUM, Aug. 19, 2002, 66(3-4):373-378. [ Abstract ] · Arizona State University . "Determination by electron holography of the electronic charge distribution at threading dislocations in epitaxial GaN." J CAI and F PONCE in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Aug. 16, 2002, 192(2):407-411. [ Abstract ] · Chinese Academy of Science (China). "The spectrum and laser properties of ytterbium doped phosphate glass at low temperature." S DAI, A SUGIYAMA, L HU, Z LIU, G HUANG, and Z JIANG in JOURNAL OF NON-CRYSTALLINE SOLIDS, Nov., 2002, 311(2):138-144. [ Abstract ] · Chinese Academy of Sciences (China). "Investigation of dislocation density of GaN with single- and double-buffer layer grown on sapphire (0001) by RF-plasma assisted MBE." Z ZHAO, Q MING, and A LI in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, Sept. 1, 2002, 95 (3):308-313. [ Abstract ] · Chinese Academy of Sciences (China) / University of Hong Kong (China) / Hong Kong University of Science & Technology (China). "Study of GaN thin films grown on vicinal SiC (0001) substrates by molecular beam epitaxy." L LU, H YAN, C YANG, M XIE, Z WANG, J WANG, and W GE in SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Sept., 2002, 17(9):957-960. [ Abstract ] · Chonbuk National University (South Korea) . "High-density plasma-induced etch damage of InGaN/GaN multiple quantum well light-emitting diodes." Y HAHN, R CHOI, J HONG, H PARK, C CHOI, and H LEE in JOURNAL OF APPLIED PHYSICS, Aug. 1, 2002, 92 (3):1189-1194. [ Abstract ] · CNRS (France) . "Structural defects and relation with optoelectronic properties in highly Mg-doped GaN." M LEROUX, P VENNEGUES, S DALMASSO, M BENAISSA, E FELTIN, MP DE, B BEAUMONT, B DAMILANO, N GRANDJEAN, and P GIBART in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Aug. 16, 2002, 192(2):394-400. [ Abstract ] · CNRS (France) / Universidade Estadual Londrina (Brazil). "GaNAsSb: how does it compare with other dilute III-V-nitride alloys?" J HARMAND, A CALIMAN, E RAO, L LARGEAU , J RAMOS, R TEISSIER, L TRAVERSE, G UNGARO, B THEYS, and I DIAS in SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Aug., 2002, 17(8):778-784. [ Abstract ] · Dublin City University (Ireland) / State University of Ghent (Belgium) / Helsinki University of Technology (Finland) / Polish Academy of Sciences (Poland). "Determination of crystal misorientation in epitaxial lateral overgrowth of GaN." W CHEN, P MCNALLY, K JACOBS, T TUOMI, A DANILEWSKY, Z ZYTKIEWICZ, D LOWNEY, J KANATHARANA, L KNUUTTILA, and J RIIKONEN in JOURNAL OF CRYSTAL GROWTH, Aug., 2002, 243(1):94-102. [ Abstract ] · GE Co. / Nanocrystals Technology. "Optimization of current spreading metal layer for GaN/InGaN-based light emitting diodes." X CAO, E STOKES, P SANDVIK, N TASKAR, J KRETCHMER, and D WALKER in SOLID-STATE ELECTRONICS, Aug., 2002, 46(8):1235-1239. [ Abstract ] · Georgia Institute of Technology / United Silicon Carbide Inc. "Micro-Raman scattering and microphotoluminescence of GaN thin films grown on sapphire by metal-organic chemical vapor deposition." Z FENG in OPTICAL ENGINEERING, Aug.2002, 41(8):2022-2031. [ Abstract ] · Hong Kong Polytechnic University (China) / Chinese University: Hong Kong (China). "Characterizations of GaN films grown with indium surfactant by RF-plasma assisted molecular beam epitaxy." W FONG, C ZHU, B LEUNG, C SURYA, B SUNDARAVEL, E LUO, J XU, and I WILSON in MICROELECTRONICS RELIABILITY, Aug., 2002, 42 (8):1179-1184. [ Abstract ] · Institut Preparatorie Etud Science & Technology (Tunisia ) / CNRS (France). "Effect of nitrogen in the electronic structure of GaAsN and GaAsSb(N) compounds." F BOUSBIH, BS BEN, R CHTOUROU, F CHARFI, J HARMAND, and G UNGARO in MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, Sept. 1, 2002, 21(1-2/SISI):251-254. [ Abstract ] · Institute for Rare Metals (Russia) / University of Florida. "Optical and electrical properties of GaMnN films grown by molecular-beam epitaxy." A POLYAKOV, A GOVORKOV, N SMIRNOV, N PASHKOVA, G THALER, M OVERBERG, R FRAZIER, C ABERNATHY, S PEARTON, J KIM, and F REN in JOURNAL OF APPLIED PHYSICS, Nov. 1, 2002, 92(9):4989-4993. [ Abstract ] · Institute for Rare Metals (Russia) / Wright State University / Samsung Advanced Institute of Technology (South Korea). "Deep electron and hole traps in freestanding n-GaN grown by hydride vapor phase epitaxy." A POLYAKOV, N SMIRNOV, A GOVORKOV, Z FANG, D LOOK, S PARK, and J HAN in JOURNAL OF APPLIED PHYSICS, Nov. 1, 2002, 92(9):5241-5247. [ Abstract ] · Institute for Rare Metals (Russia) / Wright State University / Samsung Advanced Institute of Technology (South Korea). "Microcathodoluminescence and electron beam induced current observation of dislocations in freestanding thick n-GaN sample grown by hydride vapor phase epitaxy." A POLYAKOV, A GOVORKOV, N SMIRNOV, Z FANG, D LOOK, S PARK, and J HAN in JOURNAL OF APPLIED PHYSICS, Nov. 1, 2002, 92(9):5238-5240. [ Abstract ] · Institute of Fundamental Technological Research PAS (Poland) / Polish Academy of Sciences (Poland) / ISMRA University Caen (France). "Finite element simulation of residual stresses in epitaxial layers." P DLUZEWSKI , G JURCZAK, G MACIEJEWSKI, S KRET, P RUTERANA, and G NOUET in ECRS 6: PROCEEDINGS OF THE 6TH EUROPEAN CONFERENCE ON RESIDUAL STRESSES, 2002, 404-4:141-146. [URL not available] · Institute of Semiconductors (China) / Tsing Hua University (China) / Aerospace Corporation (China). "The structure and current-voltage characteristics of multi-sheet InGaN quantum dots grown by a new multi-step method." Z CHEN, D LU, P HAN, X LIU, X WANG, Y LI, H YUAN, Y LU, L BING, Q ZHU, Z WANG, X WANG, and L YAN in JOURNAL OF CRYSTAL GROWTH, Aug., 2002, 243(1):19-24. [ Abstract ] · Institute of Surface Engineering & Optoelectronics (Slovenia) . "Surface composition changes in GaN induced by argon ion bombardment." J KOVAC and A ZALAR in SURFACE AND INTERFACE ANALYSIS, Aug., 2002, 34(1):253-256. [ Abstract ] · Kanagawa University (Japan) / Meijo University (Japan). "Effect of In-doping on the properties of as-grown p-type GaN grown by metalorganic vapour phase epitaxy." S YAMAGUCHI, Y IWAMURA, Y WATANABE, M KOSAKI, Y YUKAWA, S NITTA, S KAMIYAMA, H AMANO, and I AKASAKI in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Aug. 16, 2002, 192(2):453-455. [ Abstract ] · Kansas State University. "Growth and optical studies of two-dimensional electron gas of Al-rich AlGaN/GaN heterostructures." K NAM, J LI, M NAKARMI, J LIN, and H JIANG in APPLIED PHYSICS LETTERS, Sept. 2, 2002, 81(10):1809-1811. [ Abstract ] · KFA Julich GmbH (Germany) / Aixtron AG (Germany). "Green electroluminescence from a Tb-doped AlN thin-film device on Si." F LU, R CARIUS, A ALAM, M HEUKEN, and C BUCHAL in JOURNAL OF APPLIED PHYSICS, Sept. 1, 2002, 92(5):2457-2460. [ Abstract ] · Konkuk University (South Korea) / Seoul National University (South Korea). "Spectroscopic ellipsometry investigation of Gal-xInxN/GaN single and double quantum well structures." M LEE, K KIM, and E OH in SOLID STATE COMMUNICATIONS, 2002, 123(9):395-398. [Abstract ] · Kwangju Institute of Science and Technology (South Korea). "Optimization of yttrium aluminum garnet : Ce3+ phosphors for white light-emitting diodes by combinatorial chemistry method." S LEE and S SEO in JOURNAL OF THE ELECTROCHEMICAL SOCIETY, Nov., 2002, 149(11):J85-J88. [ Abstract ] · Kwangju Institute of Science & Technology (South Korea). "Improvement in light-output efficiency of InGaN/GaN multiple-quantum well light-emitting diodes by currentblocking layer." C HUH, J LEE, D KIM, and S PARK in JOURNAL OF APPLIED PHYSICS, Sept. 1, 2002, 92 (5):2248-2250. [ Abstract ] · Kyushu University (Japan) / Mie University (Japan). "Distribution of horizontal dislocations in ELO-GaN." K HORIBUCHI, S NISHIMOTO, A SUEYOSHI, N KUWANO, H MIYAKE, and K HIRAMATSU in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Aug. 16, 2002, 192(2):360-365. [ Abstract ] · Lawrence Berkeley National Laboratory. "Ion beam synthesis and n-type doping of group III-N-x-V1-x alloys." K YU in SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Aug., 2002, 17(8):785-796. [ Abstract ] · Lawrence Livermore National Laboratory. "Ion-beam-produced damage and its stability in AlN films." S KUCHEYEV, J WILLIAMS, J ZOU, C JAGADISH, M POPHRISTIC, S GUO, I FERGUSON, and M MANASREH in JOURNAL OF APPLIED PHYSICS, Oct. 1, 2002, 92 (7):3554-3558. [ Abstract ] · Lumileds Lighting. "High-power III-nitride emitters for solid-state lighting." M KRAMES, J COLLINS , N GARDNER, W GOTZ, C LOWERY, M LUDOWISE, P MARTIN, G MUELLER, R MUELLER-MACH, S RUDAZ, D STEIGERWALD, S STOCKMAN, and J WIERER in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Aug. 16, 2002, 192(2):237-245. [ Abstract ] · Massachusetts Institute of Technology / University of California at Santa Cruz. "Bias-dependent Peltier coefficient and internal cooling in bipolar devices." K PIPE, R RAM, and A SHAKOURI in PHYSICAL REVIEW B, Sept. 15, 2002, 6612(12):5316-5316. [ Abstract ] · MV Lomonosov-Moscow State University (Russia) / Russian Academy of Science (Russia). "Cathodoluminescence of ZnO/GaN/alpha-Al2O3 heteroepitaxial structures grown by chemical vapor deposition." M CHUKICHEV, B ATAEV, V MAMEDOV, Y ALIVOV, and I KHODOS in SEMICONDUCTORS, 2002, 36(9):977-980. [ Abstract ] · National Chiao Tung University (Taiwan) / MingHsin Institute of Technology (Taiwan). "Characteristics of deep levels in As-implanted GaN films." L LEE, W LEE, H CHUNG, M LEE, W CHEN, W CHEN, and H LEE in APPLIED PHYSICS LETTERS, Sept. 2, 2002, 81(10):1812-1814. [ Abstract ] · National Chiao Tung University (Taiwan) / Minghsin Institute of Technology (Taiwan). "Rapid thermal annealing effects on blue luminescence of As-implanted GaN." H HUANG, J XIAO, C KU, H CHUNG, W CHEN, W CHEN, M LEE, and H LEE in JOURNAL OF APPLIED PHYSICS, Oct. 1, 2002, 92(7):4129-4131. [ Abstract ] · National Chiao Tung University (Taiwan) / National Yunlin University of Science & Technology (Japan). "Dependence of deep level concentrations on ammonia flow rate in n-type GaN films." L LEE, F CHANG, H CHUNG, M LEE, W CHEN, W CHEN, and B HUANG in CHINESE JOURNAL OF PHYSICS, Aug., 2002, 40 (4):424-428. [ Abstract ] · National Institute of Advanced Industrial Science & Technology (Japan) . "Control of GaN surface morphologies grown on 6H-SiC (0001) using plasma-assisted molecular beam epitaxy." K JEGANATHAN, M SHIMUZU, T IDE, and H OKUMURA in JOURNAL OF CRYSTAL GROWTH, Sept., 2002, 244(1):33-38. [ Abstract ] · National Institute of Advanced Industrial Science & Technology (Japan) / Tokai University (Japan) / Tokyo University of Science (Japan). "Surface morphology of GaN epilayer with SixN1-x buffer layer grown by ammonia-source MBE." M SHIMIZU, H OHKITA, A SUZUKI, and H OKUMURA in SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3:1465-1468. [Abstract not freely available] · National Research Council of Canada. "Structure characterization of AlN buffer layers grown on (0001) sapphire by magnetron sputter epitaxy." H TANG, J WEBB, S MOISA, J BARDWELL, and S ROLFE in JOURNAL OF CRYSTAL GROWTH, Sept., 2002, 244(1):1-5. [ Abstract ] · National Taiwan University / National Defense University (Taiwan) / Chung Hua University (Taiwan) / National Central University (Taiwan). "Impact of localized states on the recombination dynamics in InGaN/GaN quantum well structures." S FENG, Y CHENG, Y CHUNG, C YANG, Y LIN, C HSU, K MA, and J CHYI in JOURNAL OF APPLIED PHYSICS, Oct. 15, 2002, 92(8):4441-4448. [ Abstract ] · National University of Ireland / University Surrey (England). "Tight-binding and k center dot p models for the electronic structure of Ga(In)NAs and related alloys." E O'REILLY, A LINDSAY, S TOMIC, and M KAMAL-SAADI in SEMICONDUCTOR SCIENCE AND TECHNOLOGY, Aug., 2002, 17(8):870-879. [ Abstract ] · National University of Singapore . "Micro-Raman investigation of strain in GaN and AlxGa1-xN/GaN heterostructures grown on Si(111)." S TRIPATHY, S CHUA, P CHEN, and Z MIAO in JOURNAL OF APPLIED PHYSICS, Oct. 1, 2002, 92(7):3503-3510. [ Abstract ] · Nippon Telegraph & Telephone Public Corp (Japan) / Kyoto Institute of Technology (Japan) / Osaka University (Japan) . "Optical bandgap energy of wurtzite InN." T MATSUOKA, H OKAMOTO, M NAKAO, H HARIMA, and E KURIMOTO in APPLIED PHYSICS LETTERS, Aug. 12, 2002, 81(7):1246-1248. [ Abstract ] · Nippon Telegraph & Telephone Public Corp (Japan) / University of Stuttgart (Germany). "Investigations of growth of self-assembled GaInN-GaN islands on SiC substrate by metalorganic vapor phase epitaxy." Y KOBAYASHI, V PEREZ-SOLORZANO, J OFF, B KUHN, H GRABELDINGER, H SCHWEIZER, and F SCHOLZ in JOURNAL OF CRYSTAL GROWTH, Aug., 2002, 243(1):103-107. [ Abstract ] · North Carolina State University / Kyma Technologies Inc. "X-ray and Raman analyses of GaN produced by ultrahigh-rate magnetron sputter epitaxy." M PARK, J MARIA, J CUOMO, Y CHANG, J MUTH, R KOLBAS, R NEMANICH, E CARLSON, and J BUMGARNER in APPLIED PHYSICS LETTERS, Sept. 2, 2002, 81(10):1797-1799. [ Abstract ] · Northwestern University / Samsung Advanced Institute of Technology (South Korea). "Comparison of ultraviolet light-emitting diodes with peak emission at 340 nm grown on GaN substrate and sapphire." A YASAN, R MCCLINTOCK, K MAYES, S DARVISH, H ZHANG, P KUNG, M RAZEGHI, S LEE, and J HAN in APPLIED PHYSICS LETTERS, Sept. 16, 2002, 81(12):2151-2153. [ Abstract ] · Peking University (China) / University of Leuven (Belgium). "Modification of new photoelectric material GaN by implantation of H+, He+ and N+ ion beam." S YAO, S ZHOU, S JIAO, Z MENG, Y LU, C SUN, C SUN, A VANTOMME, G LANGOUCHE, B PIPELEERS, and Q ZHAO in SURFACE & COATINGS TECHNOLOGY, Sept., 2002, 158:412-415. [ Abstract ] · Polish Academy of Science (Poland) / CNRS (France) / Wroclaw Technical University (Poland) / High Pressure Research Center Unipress (Poland). "X-ray diffraction studies of epitaxial laterally overgrown (ELOG) GaN layers on sapphire substrates." J DOMAGALA, Z ZYTKIEWICZ, B BEAUMONT, J KOZLOWSKI, R CZERNETZKI, P PRYSTAWKO, and M LESZCZYNSKI in JOURNAL OF CRYSTAL GROWTH, Nov. 1, 2002, 245(1-2):37-49. [ Abstract ] · Rensselaer Polytech Institute. "Gallium nitride power device design tradeoffs." K MATOCHA, T CHOW, and R GUTMANN in SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3:1531-1534. [Abstract not freely available] · Rudjer Boskovic Institute (Croatia) / Wright State University. "Thermoelectric effect spectroscopy of deep levels in semi-insulating GaN." U DESNICA, M PAVLOVIC, Z FANG, and D LOOK in JOURNAL OF APPLIED PHYSICS, Oct. 1, 2002, 92(7):4126-4128. [ Abstract ] · Russian Academy of Science (Russia). "Dependence of GaN photoluminescence on the excitation intensity." V BESSOLOV, V EVSTROPOV, M KOMPAN, and M MESH in SEMICONDUCTORS, 2002, 36(10):1128-1131. [ Abstract ] · Sakarya University (Turkey) / National Research Council Canada / University of Sao Paulo (Brazil) / University of Exeter (England). "Phonons on group-III nitride (110) surfaces." H TUTUNCU, R MIOTTO, G SRIVASTAVA, and J TSE in PHYSICAL REVIEW B, Sept. 15, 2002, 6611(11):5304-5304. [ Abstract ] · Swiss Federal Institute of Technology (Switzerland) / Lucent Technology . "Structure of Gd2O3 films epitaxially grown on GaAs(100) and GaN(0001) surfaces." T FLUCKIGER, M ERBUDAK, A HENSCH, Y WEISSKOPF, M HONG, and A KORTAN in SURFACE AND INTERFACE ANALYSIS , Aug., 2002, 34(1):441-444. [ Abstract ] · Tohoku University (Japan) . "High efficient light-emitting diodes with antireflection subwavelength gratings." Y KANAMORI, M ISHIMORI, and K HANE in IEEE PHOTONICS TECHNOLOGY LETTERS, Aug., 2002, 14(8):1064-1066. [ Abstract ] · Toshiba Co. Ltd. (Japan). "Near-infrared intersubband absorption in GaN/AlN quantum wells grown by molecular beam epitaxy." N IIZUKA, K KANEKO, and N SUZUKI in APPLIED PHYSICS LETTERS, Sept. 2, 2002, 81(10):1803-1805. [ Abstract ] · Toyohashi University of Technology (Japan) / Japan Atomic Energy Research Institute (Japan). "Effect of 3 MeV electron irradiation on the photoluminescence properties of Eu-doped GaN." Y NAKANISHI, A WAKAHARA, H OKADA, A YOSHIDA, T OHSHIMA, and H ITOH in APPLIED PHYSICS LETTERS, Sept. 9, 2002, 81(11):1943-1945. [ Abstract ] · Toyota Central Research and Development Labs Inc. (Japan) / Nagoya Institute of Technology (Japan). "Electrical characterization of acceptor levels in Mg-doped GaN." Y NAKANO and T JIMBO in JOURNAL OF APPLIED PHYSICS, Nov. 1, 2002, 92(9):5590-5592. [ Abstract ] · Tsing Hua University (China). "Study of silver-palladium thick film conductor for metallisation of aluminium nitride substrate." M TIAN, D ZHENG, Y WANG, and W HE in BRITISH CERAMIC TRANSACTIONS, Aug., 2002, 101(4):169-171. [ Abstract ] · Universidad Politécnica de Madrid (Spain). "From ultraviolet to green InGaN-Based conventional and resonant-cavity light-emitting diodes grown by molecular beam epitaxy." F NARANJO, S FERNANDEZ, F CALLE, M SANCHEZ-GARCIA, and E CALLEJA in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Aug. 16, 2002, 192(2):341-347. [ Abstract ] · Universidad Politécnica de Madrid (Spain) / CNRS (France). "High-quality distributed Bragg reflectors for resonant-cavity light-emitting diode applications." S FERNANDEZ, F NARANJO, F CALLE, M SANCHEZ-GARCIA, E CALLEJA, and P VENNEGUES in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Aug. 16, 2002, 192(2):389-393. [ Abstract ] · Universidad Politécnica de Madrid (Spain) / University of Barcelona (Spain) / Forschungszentrum Rossendorf EV (Germany) / Paul Drude Institut fur Festkorperelekt (Germany). "Luminescence and morphological properties of GaN layers grown on SiC/Si(111) substrates ." M SANCHEZ-GARCIA, J RISTIC, E CALLEJA, A PEREZ-RODRIGUEZ, C SERRE, A ROMANO-RODRIGUEZ, J MORANTE, R KOEGLER, W SKORUPA, A TRAMPERT, and K PLOOG in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, Aug. 16, 2002, 192(2):401-406. [ Abstract ] · University Aveiro (Portugal) / University Strathclyde (Scotland) / Instituto Tecnológico e Nuclear (ITN) (Portugal). "Structural and optical properties of InGaN/GaN layers close to the critical layer thickness." S PEREIRA, M CORREIA, E PEREIRA , C TRAGER-COWAN, F SWEENEY, K O'DONNELL, E ALVES, N FRANCO, and A SEQUEIRA in APPLIED PHYSICS LETTERS, Aug. 12, 2002, 81(7):1207-1209. [ Abstract ] · University of Bristol (England) / CNRS (France). "Raman mapping investigations and finite element analysis of double epitaxial lateral overgrown GaN on sapphire substrates." M BENYOUCEF, M KUBALL, B BEAUMONT, and V BOUSQUET in APPLIED PHYSICS LETTERS, Sept. 23, 2002, 81(13):2370-2372. [ Abstract ] · University of Bristol (England) / US Air Force Research Laboratory. "Deformation potentials of the E-2(high) phonon mode of AlN." A SARUA, M KUBALL, and NJ VAN in APPLIED PHYSICS LETTERS, Aug. 19, 2002, 81(8):1426-1428. [ |