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ISSUE 14: SCIENTIFIC LITERATURE (July - August 2002) |
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From the Technical Literature The material in this section is selected from scientific and technical papers that became available during the reporting time period. Links to online abstracts are provided. Most online abstracts are freely accessible to the public. A few require journal subscriptions or memberships, and are noted as such. The technical literature section is roughly organized by subject area and, within subjects, alphabetically by institution of the lead author. Use the links below to go directly to a section. A. Materials and Device Fabrication B. Materials and Device Design Properties D. Other Semiconductor Lighting A. Materials and Device Fabrication · Beijing Polytechnical University (China). "In-situ synthesis of aluminum nitride." Q WANG et al in HIGH-PERFORMANCE CERAMICS 2001, PROCEEDINGS, 224-2:535-538 (2002). [Abstract not available] · Boston University. "Growth kinetics of AlGaN films by plasma-assisted molecular-beam epitaxy." E ILIOPOULOS et al in APPLIED PHYSICS LETTERS, 81(2):295-297 (2002). [Abstract] · Central South University (China) / University of Science and Technology (China). "Synthesis of ultrafine aluminum nitride powder by a low-temperature carbothermal reduction process." M QIN et al in HIGH-PERFORMANCE CERAMICS 2001, PROCEEDINGS , 224-2:531-534 (2002). [Abstract not available] · Chalmers University of Technology (Sweden) / University of Gothenburg (Sweden)."Initial growth of GaN on alpha-Al2O3(0001) by molecular beam epitaxy." S DAVIDSSON et al in APPLIED PHYSICS LETTERS, 81(4):664-666 (2002). [Abstract] · Chinese Academy of Science (China). "Tape casting of aluminum nitride substrates." Q ZHANG et al in HIGH-PERFORMANCE CERAMICS 2001, PROCEEDINGS, 224-2:637-642 (2002). [Abstract not available] · Chungnam National University (South Korea). "A model for the growth of AIN films on silicon substrates by plasma-assisted molecular beam epitaxy." S HONG et al in ELECTROCHEMICAL AND SOLID STATE LETTERS, 5(7):G54-G56 (2002). [Abstract] · Chungnam National University (South Korea) / HANtech (South Korea). "Growth parameters for polycrystalline GaN on silica substrates by metalorganic chemical vapor deposition." S PARK et al in JOURNAL OF CRYSTAL GROWTH, 242(3-4):383-388 (2002). [Click on Volume 242 Issues 3-4, then scroll to abstract] · Cree Inc. "SiC materials-progress, status, and potential roadblocks." AR POWELL et al in Proceedings of the IEEE, 90(6):942-55 (2002). [available to IEEE member subscribers, see table of contents online.] · Dongguk University (South Korea) / Kyung Hee University (South Korea). " Growth of GaN nanorods by a hydride vapor phase epitaxy method." H KIM et al in ADVANCED MATERIALS, 14(13-14):991-+ (2002). [Abstract] · FB Mat Wissensch FG Nichtemet Anorgan (Germany) / Indian Institute of Science (India). "The production of AlN-rich matrix composites by the reactive infiltration of Al alloys in nitrogen." S SWAMINATHAN et al in ACTA MATERIALIA, 50(12): 3095-3106 (2002). [Click on Volume 50, Issue 12 then scroll to abstract] · IEEE. "Breaking into the blue [gallium nitride substrate]." G ZORPETTE in IEEE Spectrum, 39(6):18-19 (2002). [Available to IEEE member subscribers, see table of contents online.] · Institute of Materials Research and Engineering (Singapore). "Quantum 1/f noise in epitaxial lateral overgrown GaN: piezoelectric effect." EK SIA et al in Semiconductor Science and Technology, 17(6):617-20 (2002). [Abstract] · Japan Society of Applied Physics. "2001 International Conference on Solid State Devices and Materials (SSDM 2001), 26-28 Sept. 2001, Tokyo, Japan." Japanese Journal of Applied Physics, Part 1, 41(4B) (2002). [Table of Contents] · Japan Society of Applied Physics. "Conference Proceedings: Silicon Carbide and Related Materials 2001. ICSCRM2001. International Conference, 28 Oct.-2 Nov. 2001, Tsukuba, Japan." ICSCRM2001 in Materials Science Forum, 389-393(pt. 1) (2002). [Table of Contents for Conference available from the U.S. Army Research Office - Far East] · Joint Research Center for Atomic Technology (Japan) / Furukawa Electric Corporation Ltd. (Japan) / University of Tokyo (Japan)."Effect of Si doping on the growth and microstructure of GaN grown on Si(111) using SiC as a buffer layer." D WANG et al in JOURNAL OF CRYSTAL GROWTH, 242(1-2):20-28 (2002). [Click on Volume 242 Issues 1-2, then scroll to abstract] · Kansas State University. "Achieving highly conductive AlGaN alloys with high Al contents." K NAM et al in APPLIED PHYSICS LETTERS, 81(6):1038-1040 (2002). [Abstract] · Linkoping University (Sweden). "Structural defects in electrically degraded 4H-SiC p{sup +}/n{sup -}/n{sup +} diodes." POA PERSSON et al in Applied Physics Letters, 80(25):4852-4 (2002). [Abstract] · Lucent Technologies / Columbia University / Princeton University / Agere Systems / MIT Lincoln Lab. "High mobility AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy on semi-insulating GaN templates prepared by hydride vapor phase epitaxy." M MANFRA et al in JOURNAL OF APPLIED PHYSICS, 92(1):338-345 (2002). [Abstract] · Lucent Technologies / MIT-Lincoln Lab / University of California-Santa Barbara. "Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates." J HSU et al in APPLIED PHYSICS LETTERS, 81(1):79-81 (2002). [Abstract] · Nagoya University (Japan). "Growth of (1(1)over-bar-01) GaN on a 7-degree off-oriented (001)Si substrate by selective MOVPE." Y HONDA et al in JOURNAL OF CRYSTAL GROWTH, 242(1-2):82-86 (2002). [Click on Volume 242 Issues 1-2, then scroll to abstract] · Nagoya University (Japan). "Growth of a GaN crystal free from cracks on a (111)Si substrate by selective MOVPE." Y HONDA et al in JOURNAL OF CRYSTAL GROWTH, 242(1-2):77-81 (2002). [Click on Volume 242 Issues 1-2, then scroll to abstract] · Nanjing University (China). "Nitrogen diffusion in the Si growth on GaN by low-pressure chemical vapor deposition." P CHEN et al in JOURNAL OF MATERIALS RESEARCH, 17(8):1881-1883 (2002). [Abstract] · Nanyang Technology University (Singapore) / Singapore MIT Alliance (Singapore). "Molecular beam epitaxial growth of GaAs1-XNX with dispersive nitrogen source." S WANG et al in JOURNAL OF CRYSTAL GROWTH, 242(1-2):87-94 (2002). [Click on Volume 242 Issues 1-2, then scroll to abstract] · National Central University (Taiwan). "The doping process and dopant characteristics of GaN." JK SHEU et al in Journal of Physics: Condensed Matter, 14(22):R657-702 (2002). [Abstract] · National Cheng Kung University (Taiwan) / Chung Shan Institute of Science and Technology (Taiwan) / National Research Council Canada (Canada). "InGaN/GaN light emitting diodes with a p-down structure." Y SU et al in IEEE TRANSACTIONS ON ELECTRON DEVICES, 49(8):1361-1366 (2002). [Available to IEEE member subscribers, see table of contents online.] · National Research Council (Canada). "Ammonia-molecular-beam epitaxial growth and optical properties of GaN/AlGaN quantum wells." H TANG et al in Journal of Applied Physics, 91(12):9685-8 (2002). [Abstract] · National Taiwan University (Taiwan) / Academy Sinica (Taiwan). "Selective-area growth of indium nitride nanowires on gold-patterned Si(100) substrates." LIANG et al in PHYSICS LETTERS, 81(1):22-24 (2002). [Abstract] · North Carolina State University. "Gallium nitride materials - progress, status, and potential roadblocks." RF DAVIS et al in Proceedings of the IEEE, 90(6):993-1005 (2002). [Available to IEEE member subscribers, see table of contents online.] · North Carolina State University / University of Bremen (Germany). "Investigations regarding the maskless pendeo-epitaxial growth of GaN films prior to coalescence." A ROSKOWSKI et al in IEEE JOURNAL OF QUANTUM ELECTRONICS, 38(8):1006-1016 (2002). [Available to IEEE member subscribers, see table of contents online.] · Russian Academy of Science (Russia) / AF Ioffe Physicotechnical Insitute (Russia) / Foundation for the Support of Science and Education (Russia). "Mechanism and kinetics of early growth stages of a GaN film." S KUKUSHKIN et al in PHYSICS OF THE SOLID STATE, 44(7):1399-1405 (2002). [Available to OJPS member subscribers, see table of contents online.] · Shanxi Normal University (China) / Huazhong University of Science and Technology (China). "The effects of experimental parameters on the orientation of AlN nano films." X XU et al in INTERNATIONAL JOURNAL OF NONLINEAR SCIENCES AND NUMERICAL SIMULATION, 3(3-4/SISI):495-498 (2002). [Abstract not available] · Sophia University (Japan) / Eindhoven University of Technology (Netherlands). "Preparation of aluminum nitride-silicon carbide nanocomposite powder by the nitridation of aluminum silicon carbide." K ITATANI et al in JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 85(7):1894-1896 (2002). [Abstract] · Stanley Electrical Company Ltd. (Japan) / Tohoku University (Japan). "Effects of slight misorientation of GaN templates on molecular-beam-epitaxy growth of ZnO." H KATO et al in JOURNAL OF APPLIED PHYSICS, 92(4):1960-1963 (2002). [Abstract] · Swiss Federal Institute of Technology (Switzerland) / Otto Von Guericke University (Germany). "Influence of the carrier gas composition on morphology, dislocations, and microscopic luminescence properties of selectively grown GaN by hydride vapor phase epitaxy." V WAGNER et al in JOURNAL OF APPLIED PHYSICS, 92(3):1307-1316 (2002). [Abstract] · Tampere University (Finland). "Suppression of interfacial atomic diffusion in InGaNAs/GaAs heterostructures grown by molecular-beam epitaxy." CS PENG et al in Applied Physics Letters, 80(25):4720-2 (2002). [Abstract] · Technion-Israel Institute of Technology (Israel). "The effect of mass transfer on the photoelectrochemical etching of GaN." E HARUSH et al in Semiconductor Science and Technology, 17(6):510-14 (2002). [Abstract] · Technische University of Berlin (Germany). "In-situ observation of MOVPE epitaxial growth." W RICHTER in Applied Physics A (Materials Science Processing), A75(1):129-40 (2002). [Abstract] · Tohoku University (Japan). "Growth and characterization of the perovskite-type oxides (NdSr)(AlNb)O{sub 3} and (LaSr)(GaNb)O{sub 3} as substrates for GaN epitaxial growth." M ITO et al in Journal of Alloys and Compounds, 339:335-8 (2002). [Click on Volume 333-340, then Volume 339, Issues 1-2 then scroll to abstract] · Tohoku University (Japan). "Silver photodoping into Al-ZnSe for application to white light emitters." L HYUN-YONG et al in Applied Physics Letters, 80(23):4336-8 (2002). [Abstract] · Tohoku University (Japan) / Ricoh Co. Ltd. (Japan) / Cornell University. "GaN single crystal growth using high-purity Na as a flux." M AOKI et al in JOURNAL OF CRYSTAL GROWTH, 242(1-2):70-76 (2002). [Click on Volume 242 Issues 1-2, then scroll to abstract] · Toshiba Corporation (Japan). "Mechanism for reducing dislocations at the initial stage of GaN growth on sapphire substrates using high-temperature-grown single-crystal AlN buffer layers." Y OHBA et al in Japanese Journal of Applied Physics, Part 2 (Letters), 41(6A):L615-18 (2002). [Abstract] · Universidad Autonoma Barcelona (Spain) / Institute Microelectron Madrid (Spain). "Epitaxial growth of AlN on sapphire (0001) by sputtering: a structural, morphological and optical study." Y HUTTEL et al in JOURNAL OF CRYSTAL GROWTH, 242(1-2):116-123 (2002). [Click on Volume 242 Issues 1-2, then scroll to abstract] · University of California-Santa Barbara. "Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition." S HEIKMAN et al in APPLIED PHYSICS LETTERS, 81(3):439-441 (2002). [Abstract] · University of Illinois / NASA Glenn Research Center. "High rate etching of AlN using BCl3/Cl-2/Ar inductively coupled plasma." F KHAN et al in MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 95(1):51-54 (2002). [Click on Volume 95, Issue 1 then scroll to abstract] · University of New Mexico / University of Texas. "Nanoheteroepitaxy for the integration of highly mismatched semiconductor materials." S HERSEE et al in IEEE JOURNAL OF QUANTUM ELECTRONICS, 38(8):1017-1028 (2002). [Available to IEEE member subscribers, see table of contents online.] · University of Nottingham (UK). "Optimisation of the blue emission from As-doped GaN films grown by molecular beam epitaxy." C FOXON et al in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 192(1):39-43 (2002). [Abstract] · University of Paderborn (Germany). "n- and p-type doping of cubic GaN." D AS in DEFECTS AND DIFFUSION IN CERAMICS: AN ANNUAL RETROSPECTIVE IV, 206-2:87-102 (2002). [Abstract not available] · University of South Carolina. "AlN/AlGaN superlattices as dislocation filter for low-threading-dislocation thick AlGaN layers on sapphire." H WANG et al in APPLIED PHYSICS LETTERS, 81(4):604-606 (2002). [Abstract] · University of Wisconsin. "Influence of Bi impurity as a surfactant during the growth of GaN by metalorganic vapor phase epitaxy." L ZHANG et al in JOURNAL OF CRYSTAL GROWTH, 242(3-4):302-308 (2002). [Click on Volume 242 Issues 3-4, then scroll to abstract] · USN Research Laboratory. "Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN." D KOLESKE et al in JOURNAL OF CRYSTAL GROWTH, 242(1-2):55-69 (2002). [Click on Volume 242 Issues 1-2, then scroll to abstract] B. Materials and Device Design Properties · Academy of Science (Belarus). "Monte Carlo simulation of THz-pulse generation from semiconductor surface." VL MALEVICH in Semiconductor Science and Technology, 17(6):551-6 (2002). [Abstract] · Academy Sinica (China). "Tuning of exciton-photon coupling in a planar semiconductor microcavity by applying hydrostatic pressure." Z JIDONG et al in Journal of Physics: Condensed Matter, 14(21):5349-53 (2002). [Abstract] · Academy Sinica (China). "Violet to infrared multiwavelength generation in periodically poled lithium niobate pumped by a Q-switched Nd:YVO{sub 4} laser." Z-Y XU et al in Chinese Physics Letters, 19(6):801-3 (2002). [Abstract] · Austrian Research Center (Austria) / Joint Research Center (Italy). "Microstructure of plasma nitrided layers on aluminium." R SONNLEITNER et al in SURFACE & COATINGS TECHNOLOGY, 156(1-3):149-154 (2002). [Click on Volume 156, Issues 1-3, then scroll to abstract] · Carnegie Mellon University / PARC / Max Planck Gesell (Berlin). "Review of structure of bare and adsorbate-covered GaN(0001) surfaces: art. no. 3." R FEENSTRA et al in MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 7(3):3-3 (2002). [Abstract] · Catholic University of Daegu (South Korea). "Crystal orientation effects on electronic properties of wurtzite InGaN/GaN quantum wells." P SEOUNG-HWAN in Journal of Applied Physics, 91(12):9904-8 (2002). [Abstract] · Chinese Academy of Science (China). "Luminescence enhancement of core-shell ZnS:Mn/ZnS nanoparticles." C LIXIN et al in Applied Physics Letters, 80(23):4300-2 (2002). [Abstract] · Chinese Academy of Science (China). "The mechanism of blueshift in excitation-intensity-dependent photo luminescence spectrum of nitride multiple quantum wells." Z CHEN et al in JOURNAL OF LUMINESCENCE, 99(1):35-38 (2002). [Click on Volume 99, Issue 1 then scroll to abstract] · Chinese Academy of Science (China). "Photoluminescence and capacitance transients in highly Mg-doped GaN." L LU et al in Applied Physics A (Materials Science Processing), A75(3):441-4 (2002). [Abstract] · Chinese Academy of Science (China). "Structural characteristic of cubic GaN nucleation layers on GaAs(001) substrates by MOCVD." X ZHENG et al in JOURNAL OF CRYSTAL GROWTH, 242(1-2):124-128 (2002). [Click on Volume 242 Issues 1-2, then scroll to abstract] · Chonbuk National University (South Korea). "Two different behavior patterns of photoluminescence depending on Mg doping rate in p-type GaN epilayers." SM JEONG et al in Journal of Applied Physics, 91(12):9711-15 (2002). [Abstract] · CINVESTAV Queretaro (Mexico) / Applied Materials Inc. "Chemical depth profile of ultrathin nitrided SiO2 films." A HERRERA-GOMEZ et al in APPLIED PHYSICS LETTERS, 81(6):1014-1016 (2002). [Abstract] · CNRS (France) / Picogiga (France). "Injection dependence of the electroluminescence spectra of phosphor free GaN-based white light emitting diodes." S DALMASSO et al in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH , 192(1):139-143 (2002). [Abstract] · CNRSM (Italy) / Paul Drude Institut fur Festkorperelekt (Germany). "Strain field and chemical composition determination of InGaN/GaN and AlGaN/GaN multiple quantum wells grown on SiC substrates." M TAGLIENTE et al in JOURNAL OF APPLIED PHYSICS, 92(1):70-76 (2002). [Abstract] · Fachhsch Schmalkalden (Germany) / Paul Drude Institut fur Festkorperelekt (Germany). "Line shape analysis of photoreflectance excitation spectra of GaN films on 6H-SiC(0001)." U BEHN et al in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 192(1):144-150 (2002). [Abstract] · Institute of Chemical Technology (Czech Republic). "Aluminium, gallium and indium nitrides : Advanced materials in electronics." J STEJSKAL et al in CHEMICKE LISTY, 96(5):311-320 (2002). [Scroll to abstract] · Kohgakuin University (Japan) / Hokkaido University (Japan). "Optical characteristic of the strain-controlled GaN epitaxial layer grown on 6H-SiC substrate by an adapting (GaN/AlN) multibuffer layer." M HORIE et al in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 192(1):151-156 (2002). [Abstract] · Kwangju Institute of Science and Technology (South Korea) / Korea Research Institute of Standards and Science (South Korea) / Samsung Advanced Institute of Technology (South Korea). "Voltage dependence of magnetoresistance in magnetic tunnel junctions with AlN tunnel barrier." H SHIM et al in JOURNAL OF APPLIED PHYSICS, 92(2):1095-1098 (2002). [Abstract] · Lund University (Sweden) / Hokkaido University (Japan) / RIKEN (Japan) / Crystal Fibre (Denmark). "Compositional variation of AlGaN epitaxial films on 6H-SiC substrates determined by cathodoluminescence. : art. no. 5." A PETERSSON et al in MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 7(5):5-5 (2002). [Abstract] · Nagoya Institute of Technology (Japan). "Demonstration of an InGaN-based light-emitting diode on an AlN/sapphire template by metalorganic chemical vapor deposition." T EGAWA et al in APPLIED PHYSICS LETTERS, 81(2):292-294 (2002). [Abstract] · Nanjing University (China). "Optical properties of Mg-implanted GaN." SY XIE et al in Applied Physics A (Materials Science Processing), A75(3):363-5 (2002). [Abstract] · National Academy of Science (Belarus) / Institute for Theoretical Electronics (Germany) / AIXTRON (Germany). "Luminescence and stimulated emission from GaN on silicon substrates heterostructures." G YABLONSKII et al in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 192(1):54-59 (2002). [Abstract] · National Cheng Kung University (Taiwan) / National Central University (Taiwan) / South Epitaxy Corporation (Taiwan). "Nitride-based cascade near white light-emitting diodes." C CHEN et al in IEEE PHOTONICS TECHNOLOGY LETTERS, 14(7):908-910 (2002). [Available to IEEE member subscribers, see table of contentsonline.] · National Chiao Tung University (Taiwan). "Electrical and optical properties of beryllium-implanted Mg-doped GaN." Y CHANG-CHIN et al in Journal of Applied Physics, 92(4):1881-7 (2002). [Abstract] · National Taiwan University (Taiwan) / National Taiwan University of Science and Technology (Taiwan). "Nonlinear behaviors of valence-band splitting and deformation potential in dilute GaNxAs1-x alloys." M YA et al in JOURNAL OF APPLIED PHYSICS, 92(3):1446-1449 (2002). [Abstract] · NMRC (Ireland) / CNRS (France) / Universidad Politecnical (Spain) University of Dublin Trinity College (Ireland). "Experimental characterisation of GaN-based resonant cavity light emitting diodes." B ROYCROFT et al in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 192(1):97-102 (2002). [Abstract] · North Carolina State University. "Effect of thickness variation in high-efficiency InGaN/GaN light-emitting diodes." J NARAYAN et al in Applied Physics Letters, 81(5):841-3 (2002). [Abstract] · Northwestern University. "On the origin of the 2.8 eV blue emission in p-type GaN:Mg: a time-resolved photoluminescence investigation." F SHADEDIPOUR et al in MRS Internet Journal of NitrideSemiconductor Research, 7S1 (2002). [Abstract] · Northwestern University. "Top-emission ultraviolet light-emitting diodes with peak emission at 280 nm." A YASAN et al in Applied Physics Letters, 81(5):801-2 (2002). [Abstract] · Oak Ridge National Laboratories / National Institute of Advanced Industrial Science and Technology (Japan). "Characterization of Mg doped GaN by positron annihilation spectroscopy." J MOXOM et al in JOURNAL OF APPLIED PHYSICS, 92(4):1898-1901 (2002). [Abstract] · Ohio University. "Visible luminescent activation of amorphous AlN:Eu thin-film phosphors with oxygen." ML CALDWELL et al in MRS Internet Journal of Nitride Semiconductor Research, 7S1 (2002). [Abstract] · Osaka University (Japan). "High temperature (> 400 K) ferromagnetism, in III-V-based diluted magnetic semiconductor GaCrN grown by ECR molecular-beam epitaxy." M HASHIMOTO et al in SOLID STATE COMMUNICATIONS , 122(1-2):37-39 (2002). [Click on Volume 122, Issues 1-2, then scroll to abstract] · Paul Drude Institut fur Festkorperelekt (Germany). "Impact of In bulk and surface segregation on the optical properties of (In,Ga)N/GaN multiple quantum wells." O BRANDT et al in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 192(1):5-13 (2002). [Abstract] · Paul Drude Institut fur Festkorperelekt (Germany). "Influence of exciton localization on the quantum efficiency of GaN/(In,Ga)N multiple quantum wells grown by molecular-beam epitaxy." S DHAR et al in APPLIED PHYSICS LETTERS, 81(4):673-675 (2002). [Abstract] · Paul Drude Institut fur Festkorperelekt (Germany) / Max Planck Institute for Metals Research (German). "Indentation of GaN: A study of the optical activity and strain state of extended defects." U JAHN et al in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 192(1):79-84 (2002). [Abstract] · Paul Drude Institut fur Festkorperelekt (Germany) / University of California-Santa Barbara. <"Effect of exciton localization on the quantum efficiency of GaN/(In,Ga)N multiple quantum wells." S DHAR et al in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 192(1):85-90 (2002). [Abstract] · Royal Institute of Technology (Sweden). "The influence of band offsets on the IV characteristics for GaN/SiC heterojunctions." E DANIELSSON et al in Solid-State Electronics, 46(6):827-35 (2002). [Click on Volume 46, Issue 6, then scroll to abstract] · Russian Academy of Science (Russia). "Low-temperature time-resolved photoluminescence in InGaN/GaN quantum wells." A ANDRIANOV et al in SEMICONDUCTORS, 36(6):641-646 (2002). [Abstract] · Samsung Advanced Institute of Technology (South Korea). "Cathodoluminescence and Al composition of biaxially stressed AlGaN/GaN epitaxial layers." I LEE et al in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 192(1):67-71 (2002). [Abstract] · Sharp Co. Ltd. (Japan) / Ritsumeikan University (Japan) / Osaka University (Japan). "Room-temperature observation of ferromagnetism in diluted magnetic semiconductor GaGdN grown by RF-molecular beam epitaxy." N TERAGUCHI et al in SOLID STATE COMMUNICATIONS, 122(12):651-653 (2002). [Click on Volume 122, Issue 12, then scroll to abstract] · Sophia University (Japan). "Intersubband absorption at lambda similar to 1.2-1.6 mu m in GaN/AlN multiple quantum wells grown by rf-plasma molecular beam epitaxy." K KISHINO et al in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 192(1):124-128 (2002). [Abstract] · Surrey University (UK). "Accurate methods for study of light emission from quantum wells confined in a microcavity." SB CONSTANT et al in IEEE Journal of Quantum Electronics, 38(8):1031-8 (2002). [Available to IEEE member subscribers, see table of contents online.] · Tampere University of Technology (Finland) / Helsinki University of Technology (Finland) / Technical Research Center Finland (Finland). "Structural, electrical, and optical properties of defects in Si-doped GaN grown by molecular-beam epitaxy on hydride vapor phase epitaxy GaN on sapphire." P LAUKKANEN et al in JOURNAL OF APPLIED PHYSICS, 92(2):786-792 (2002). [Abstract] · Tsukuba University (Japan) / Waseda University (Japan) / NGK Insulators Ltd. (Japan). "Exciton spectra of an AlN epitaxial film on (0001) sapphire substrate grown by low-pressure metalorganic vapor phase epitaxy." T ONUMA et al in APPLIED PHYSICS LETTERS, 81(4):652-654 (2002). [Abstract] · Unipress (Poland) / National Institute of Advanced Industrial Science and Technology (Japan) / Tsukuba University (Japan). "Different pressure coefficients of the light emission in cubic and hexagonal InGaN/GaN quantum wells." T SUSKI et al in APPLIED PHYSICS LETTERS, 81(2):232-234 (2002). [Abstract] · Universidad Estadual Campinas (Brazil) / USP (Brazil). "Structural properties of aluminum-nitrogen films prepared at low temperature." C RIBEIRO et al in APPLIED PHYSICS LETTERS, 81(6):1005-1007 (2002). [Abstract] · Universidad Miguel Hernandez (Spain) / ETSI Telecommunicacion (Spain) / ISOM (Spain) / CNRS (France) / Katholieke University of Nijmegen (Netherlands). "Interplay between GaN and AlN sublattices in wurtzite AlxGa1-xN alloys revealed by Raman spectroscopy." A ALVAREZ et al in JOURNAL OF APPLIED PHYSICS, 92(1):223-226 (2002). [Abstract] · Universidad Politecnica Madrid (Spain) / Universidad Autonoma Madrid (Spain) / Paul Drude Institut fur Feskorperelekt (Germany). "AlGaN nanocolumns grown by molecular beamepitaxy: Optical and structural characterization." J RISTIC et al in PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 192(1):60-66 (2002). [Abstract] · University Hassan II Ain Chok (Morocco) / CNRS (France). "Impact of the defects on the electrical and optical properties of AlGaN ultraviolet photodetectors." M HANZAZ et al in JOURNAL OF APPLIED PHYSICS, 92(1):13-18 (2002). [Abstract] · University of Alberta (Canada). "Preparation of metallized GaN/sapphire cross sections for TEM analysis using wedge polishing." J CHEN et al in MICRON, 33(5):489-492 (2002). [Click on Volume 33, Issue 5, then scroll to abstract] · University of Bremen (Germany) / University of Magdeburg (Germany) / North Carolina State University. "Strain in cracked AlGaN layers." S EINFELDT et al in JOURNAL OF APPLIED PHYSICS, 92(1):118-123 (2002). [ Abstract] · University of California-Berkeley. "Small band gap bowing in In{sub 1-x}Ga{sub x}N alloys." J WU et al in Applied Physics Letters, 80(25):4741-3 (2002) [Abstract] · University of California-Santa Barbara. "Investigation of the piezoelectric polarization in (In,Ga)N/GaN multiple quantum wells grown by plasma-assisted molecular beam epitaxy." P WALTEREIT et al in JOURNAL OF APPLIED PHYSICS, 92(1):456-460 (2002). [Abstract] · University of California-Santa Barbara. "Structural characterization of nonpolar (11(2)over-bar0) a-plane GaN thin films grown on (1(1)over-bar02) r-plane sapphire." M CRAVEN et al in APPLIED PHYSICS LETTERS, 81(3):469-471 (2002). [Abstract] · University of Complutense (Spain) / Berg University Gesamthsch Wuppertal (Germany). "Near-field cathodoluminescence studies on n-doped gallium nitride films." E NOGALES et al in JOURNAL OF APPLIED PHYSICS, 92(2):976-978 (2002). [Abstract] · University of Florida. "Electrical characterization of GaN metal oxide semiconductor diode using Sc2O3 as the gate oxide." R MEHANDRU et al in ELECTROCHEMICAL AND SOLID STATE LETTERS, 5(7):G51-G53 (2002). [Abstract] · University of Florida. "GaN pnp bipolar junction transistors operated to 250 degrees C." AP ZHANG et al in Solid-State Electronics, 46(6):933-6 (2002). [Click on Volume 46, Issue 6, then scroll to abstract] · University of Florida. "Pt Schottky contacts to n-(Ga,Mn)N." J KIM et al in APPLIED PHYSICS LETTERS, 81(4):658-660 (2002). [Abstract] · University of Florida / Samsung Electric (South Korea). "Electrical characterization of GaN metal oxide semiconductor diodes using MgO as the gate oxide." J KIM et al in JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 149(8):G482-G484 (2002). [Abstract] · University of Illinois. "Thermally-stable low-resistance Ti/Al/Mo/Au multilayer ohmic contacts on n-GaN." V KUMAR et al in Journal of Applied Physics, 92(3):1712-14 (2002). 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