Solid-State Lighting Issue 13: Scientific Literature (April

ISSUE 13:� SCIENTIFIC LITERATURE (April - June 2002)

From the Technical Literature

The material in this section is selected from scientific and technical papers that became available during the reporting time period.� Links to online abstracts are provided.� Most online abstracts are freely accessible to the public.� A few require journal subscriptions or memberships, and are noted as such.

The technical literature section is roughly organized by subject area and, within subjects, alphabetically by institution of the lead author. Use the links below to go directly to a section.

A. Materials and Device Fabrication

B. Materials and Device Design Properties

C. Lighting Systems

D. Other White LED Lighting

A. Materials and Device Fabrication

� Agere Systems Inc. "Single-crystal GaN/Gd2O3/GaN heterostructure." Hong, M., Kwo, J., Chu, S. N. G., Mannaerts, J. P., Kortan, A. R., Ng, H. M., Cho, A. Y., Anselm, K. A., Lee, C. M., and Chyi, J. I. in Journal of Vacuum Science & Technology B (Microelectronics and Nanometer Structures), Conference Proceedings: 20th North American Conference on Molecular Beam Epitaxy, 1-3 Oct. 2001, Providence, RI, USA, 2002, 20(3):1274-7.�� [Abstract]

� Bell Laboratories. "Investigation of Si doping and impurity incorporation dependence on the polarity of GaN by molecular beam epitaxy." Ng, H. M. and Cho, A. Y. in Journal of Vacuum Science & Technology B (Microelectronics and Nanometer Structures), Conference Proceedings: 20th North American Conference on Molecular Beam Epitaxy, 1-3 Oct. 2001, Providence, RI, USA, 2002, 20(3):1217-20. [Abstract]

� Boston University. "Growth kinetics of AlGaN films by plasma-assisted molecular-beam epitaxy." Iliopoulos, E. and Moustakas, T. D. in Applied Physics Letters, 2002, 81(2):295-297. [Abstract]

� Boston University. "High reflectivity and crack-free AlGaN/AlN ultraviolet distributed Bragg reflectors." Bhattacharyya, A., Iyer, S., Iliopoulos, E., Sampath, A. V., Cabalu, J., Moustakas, T. D., and Friel, I. in Journal of Vacuum Science & Technology B (Microelectronics and Nanometer Structures), Conference Proceedings: 20th North American Conference on Molecular Beam Epitaxy, 1-3 Oct. 2001, Providence, RI, USA, 2002, 20(3):1229-33. [Abstract]

� Chalmers University of Technology (Sweden). "Arsenic surface segregation during the molecular-beam epitaxial growth of GaAs embedded in wurtzite GaN." Hyonju Kim and Andersson, T. G. in Applied Physics Letters, 2002, 80(25):4768-70.� [ Abstract]

� Commissariat a l'Energie Atomique (France)."Dynamically stable gallium surface coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN."Adelmann, C., Brault, J., Jalabert, D., Gentile, P., Mariette, H., Mula, G., and Daudin, B.in Journal of Applied Physics, 2002, 91(12):9638-45. [ Abstract]

� Dalian University of Technology (China)."Characterization of a high-intensity bipolar-mode pulsed ion source for surface modification of materials."� Zhu, X. P., Lei, M. K., and Ma, T. C. in Review of Scientific Instruments, 2002, 73(4):1728-33. [ Abstract]

� Georgia Institute of Technology."Role of low-temperature (200 degrees C) nitridation in the growth of GaN by� plasma-assisted molecular-beam epitaxy."Gon Namkoong, Doolittle, W. A., Brown, A. S., Losurdo, M., Capezzuto, P., and Bruno, G.in Journal of Vacuum Science & Technology B (Microelectronics and Nanometer Structures), Conference Proceedings: 20th North American Conference on Molecular Beam Epitaxy, 1-3 Oct. 2001, Providence, RI, USA, 2002, 20(3):1221-8. [ Abstract]

� IMEC (Belgium) / University of Antwerpen-UIA (Belgium) / Facult� des Sciences de Luminy (France). "Electrical spin injection in a ferromagnet/tunnel barrier/semiconductor heterostructure."� Motsny, V. F., De Boeck, J., Das, J., Van Roy, W., Borghs, G., Goovaerts, E., and Safarov, V. I. in Applied Physics Letters , 2002, 81(2):265-267. [ Abstract]

� Indian Association for the Cultivation of Science(India). "Synthesis of wurtzite GaN films by reactive hot wall vapour deposition technique: fabrication of Au/GaN Schottky diode." Deb, B., Ganguly, A., Chaudhuri, S., Chakraborti, B. R., and Pal, A. K. in Materials Chemistry and Physics , 2002, 74(3):282-8.� [Abstract � scroll down to item.]

� Institute of Electronic Structure and Laser (Greece)."Control of the polarity of molecular-beam-epitaxy-grown GaN thin films by the surface nitridation of Al ₂O₃(0001) substrates." Mikroulis, S., Georgakilas, A., Kostopoulos, A., Cimalla, V., Dimakis, E., and Komninou, Ph.in Applied Physics Letters , 2002, 80(16):2886-8. [ Abstract]

� Korea University (South Korea) / Hanyang University(South Korea) / Hynix Semiconductor (South Korea). "Single-crystalline gallium nitride nanobelts." Bae, S. Y., Seo, H. W., Park, J., Yang, H., Park, J. C., and Lee, S. Y. in Applied Physics Letters, 2002, 81(1):126-128. [ Abstract]

� Lecce University (Italy)."State-of-the-art reactive pulsed laser deposition of nitrides."Perrone, A. in Japanese Journal of Applied Physics, Part 1 (Regular Papers, Short Notes & Review Papers) ,2002, 41(4A):2163-70. [ Abstract]

� Liverpool University (UK)."Chemical beam epitaxy of GaN on Si (111) using AlAs buffer layers." Huang, T. S., Joyce, T. B., Murray, R. T., Papworth, A. J., and Chalker, P. R. in Journal of Physics D (Applied Physics) , 2002, 35(7):620-4. [ Abstract]

� Lucent Technology - Bell Laboratories."Molecular-beam epitaxyof GaN/Al _x Ga _1-xN multiple quantum wells on R-plane (1012) sapphire substrates." Ng, H. M.in Applied Physics Letters , 2002, 80(23):4369-71. [ Abstract]

� Nanjing University (China)."Hydride vapor phase epitaxy growth of GaN on sapphire with ZnO buffer layers." � Gu, S., Zhang, R., Shi, Y., Zheng, Y., Zhang, L., and Kuech, T. F. in Applied Physics A (Materials Science Processing) , 2002, A74(4):537-40. [ Abstract]

� Nanjing University (China)."Influences of mask width, fill factor, HCl addition and C doping on wing tilts in the epitaxial laterally overgrown GaN films by hydride vapor phase epitaxy." Wang, F., Zhang, R., Tan, W. S., Xiu, X. Q., Lu, D. Q., Gu, S. L., Shen, B., Shi, Y., Wu, X. S., Zheng, Y. D., Jiang, S. S., and Kuech, T. F. in Applied Physics Letters , 2002, 80(25):4765-7. [ Abstract]

� National Cheng Kung University (Taiwan)."Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes." Wu, L. W., Chang, S. J., Wen, T. C., Su, Y. K., Chen, J. F., Lai, W. C., Kuo, C. H., Chen, C. H., and Sheu, J. K. in IEEE Journal of Quantum Electronics , 2002, 38(5):446-50. [available to IEEE member subscribers, see table of contents online .]

� National Chiao Tung University (Taiwan)."Low-etch-pit-density GaN substrates by regrowth on free-standing GaN films." Chiung-Chi Tsai, Chen-Shiung Chang, and Tsung-Yu Chen in Applied Physics Letters, 2002, 80(20):3718-20. [ Abstract]

� National Chung-Hsing University (Taiwan)."High-density plasma-induced etch damage of wafer-bonded AlGaInP/mirror/Si light-emitting diodes." Wuu, D. S., Horng, R. H., Huang, S. H., and Chung, C. R. in Journal of Vacuum Science & Technology A (Vacuum, Surfaces, and Films) , 2002, 20(3):766-71. [ Abstract]

� National Taiwan University (Taiwan)."Fabrication of blue GaN light-emitting diodes by laser etching." Fu-Hsiang Yang, Chao-Jen Hsiao, Ying-Jay Yang, Jun-Hong Lin, and Lon Wang in Japanese Journal of Applied Physics, Part 2 (Letters) , 2002, 41(4B):L468-70. [ Abstract]

� Nijmegen University (The Netherlands)."Complementary study of defects in GaN by photo-etching and TEM." Weyher, J. L., Macht, L., Tichelaar, F. D., Zandbergen, H. W., Hageman, P. R., and Larsen, P. K. in Materials Science & Engineering B (Solid-State Materials for Advanced Technology) , 2002, B91-92(280-4. [ Click on Volumes 91-92 then scroll to abstract]

� North Carolina State University."Review of pendeo-epitaxial growth and characterization of thin films of GaN and AlGaN alloys on 6H-SiC(0001) and Si(111) substrates." Davis, R. F., Gehrke, T., Linthicum, K. J., Rajagopal, P., Roskowski, A. M., Zheleva, T., Preble, E. A., Zorman, C. A., Mehregany, M., Schwarz, U., Schuck, J., and Grober, R. in MRS Internet Journal of Nitride Semiconductor Research , 2002, 7S1( [Abstract]

� Nottingham University (UK)."The growth and properties of GaN:As layers prepared by plasma-assisted molecular beam epitaxy." Foxon, C. T., Harrison, I., Novikov, S. V., Winser, A. J., Campion, R. P., and Li, T. in Journal of Physics: Condensed Matter , 2002, 14(13):3383-97. [ Abstract]

� Osaka University (Japan)."Influence of Mn incorporation on molecular beam epitaxial growth of GaMnN film."Okuno, T., Fujino, T., Shindo, M., Katayama, M., Oura, K., Sonoda, S., and Shimizu, S. in Japanese Journal of Applied Physics, Part 2 (Letters) , 2002, 41(4A):L415-17. [ Abstract]

� Otto-Von Guericke University Magdeburg (Germany). "Thick, crack-free blue light-emitting diodes on Si(111) using low-temperature AlN interlayers and in situ Si _xN_y masking." Dadgar, A., Poschenrieder, M., Blasing, J., Fehse, K., Diez, A., and Krost, A. in Applied Physics Letters , 2002, 80(20):3670-2. [ Abstract]

� Oxford University (UK)."Heteroepitaxial growth of InN islands studied by STM and AFM." Norenberg, C., Martin, M. G., Oliver, R. A., Castell, M. R., and Briggs, G. A. D. in Journal of Physics D (Applied Physics) , 2002, 35(7):615-19. [ Abstract]

� Paul-Drude-Institut fur Festkorperelektronik (Germany)."Cathodoluminescence of GaAs/(Al,Ga)As and (In,Ga)N/GaN hetero structures grown by molecular beam epitaxy." Jahn, U., Brandt, O., Trampert, A., Waltereit, P., Hey, R., and Ploog, K. H. in Materials Science & Engineering B (Solid-State Materials for Advanced Technology) , 2002, B91-92(329-35. [Click on Volumes 91-92 then scroll to abstract]

� Pohang University of Science and Technology (South Korea). "High-temperature structural behavior of Ni/Au contact on GaN(0001)." Chong Cook Kim, Jong Kyu Kim, Jong-Lam Lee, Jung Ho Je, Min-Su Yi, Do Young Noh, Hwu, Y., and Ruterana, P. in MRS Internet Journal of Nitride Semiconductor Research , 2002, 7S1( [ Abstract]

� Pohang University of Science and Technology (South Korea)."Microstructures of GaN islands on a stepped sapphire surface." Kim, C. C., Je, J. H., Ruterana, P., Degave, F., Nouet, G., Yi, M. S., Noh, D. Y., and Hwu, Y. in Journal of Applied Physics , 2002, 91(7):4233-7. [ Abstract]

� Samsung Advanced Institute of Technology (South Korea) / Hanyang University (South Korea)."Dislocation density of GaN grown by hydride vapor phase epitaxy." Kyoyeol Lee and Keunho Auh in MRS Internet Journal of Nitride Semiconductor Research , 2002, 7S1( [ Abstract]

� South Carolina University. "Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management." Zhang, J. P., Wang, H. M., Gaevski, M. E., Chen, C. Q., Fareed, Q., Yang, J. W., Simin, G., and Khan, M. A. in Applied Physics Letters , 2002, 80(19):3542-4. [ Abstract]

� South Carolina University."Pulsed metalorganic chemical vapor deposition of quaternary AlInGaN layers and multiple quantum wells for ultraviolet light emission. " Changqing Chen, Jinwei Yang, Mee-Yi Ryu, Jianping Zhang, Kuokstis, E., Simin, G., and Khan, M. A. in Japanese Journal of Applied Physics, Part 1 (Regular Papers, Short Notes & Review Papers) , 2002,41(4A):1924-8. [ Abstract]

� SPMM (France). "Atomic-layer epitaxy of GaN quantum wells and quantum dots on (0001) AlN." Adelmann, C., Brault, J., Rouviere, J.-L., Mariette, H., Mula, G., and Daudin, B. in Journal of Applied Physics , 2002, 91(8):5498-500. [ Abstract]

� Texas Tech University."AlGaInN-based ultraviolet light-emitting diodes grown on Si(111)." Kipshidze, G., Kuryatkov, V., Borisov, B., Holtz, M., Nikishin, S., and Temkin, H. in Applied Physics Letters , 2002, 80(20):3682-4. [ Abstract]

� Tokyo Institute of Technology (Japan) / Shizuoka University (Japan) / Tohoku University (Japan). "Systematic examination of carrier polarity in composition spread ZnO thin films codoped with Ga and N." Tsukazaki, A., Saito, H., Tamura, K., Ohtani, M., Koinuma, H., Sumiay, M., Fuke, S., Fukumura, T., and Kawasaki, M. in Applied Physics Letters , 2002, 81(2):235-237. [ Abstract]

� University of California - Santa Barbara." Mg-rich precipitates in the p-type doping of InGaN-based laser diodes." Hansen, M., Chen, L. F., Lim, S. H., DenBaars, S. P., and Speck, J. S. in Applied Physics Letters , 2002,80(14):2469-71. [Abstract]

� Wichita State University." Reduction of dislocation density in GaN films on sapphire using AlN interlayers." Chaudhuri, J., George, J. T., Kolske, D. D., Wickenden, A. E., Henry, R. L., and Rek, Z. in Journal of Materials Science, 2002, 37(7):1449-53. [ Abstract]

� Xerox Palo Alto Research Center."Continuous-wave InGaN laser diodes on copper and diamond substrates." Wong, W. S., Kneissl, M., Treat, D. W., Teepe, M., Miyashita, N., Salleo, A., and Johnson, N. M. in Journal of Materials Research , 2002, 17(4):890-4. [ Abstract]

� Xiamen University (China). "Precipitates in AlGaN epilayers grown by metallorganic vapor phase epitaxy." Junyong Kang, Tsunekawa, S., and Ito,S. in Materials Science & Engineering B (Solid-State Materials for Advanced Technology) , 2002, B91-92(313-16. [ Click on Volumes 91-92 then scroll to abstract

B. Materials and Device Design Properties

� Agilent Labs. (Japan).� "Radiative and nonradiative lifetimes in GaInN/GaN multiquantum wells."� Minsky, M. S., Watanabe, S., and Yamada, N. in Journal of Applied Physics, 2002, 91(8):5176-81. [ Abstract]

� Cambridge University (UK).� "Optimisation of local lifetime control in high power diode."� Yuan, X., Udrea, F., Coulbeck, L., Waind, P., and Amaratunga, G. in Power Conversion Conference - Osaka PCC 2002, Osaka, Japan, 2002 [ Abstract available to IEEE members or for purchase.]

� Chonbuk National University (South Korea).� "Electrical and growth characteristics of Au/Al_0.15Ga_0.85N:Si� structures with various Si incorporations."� Cheul-Ro Lee in Journal of Electronic Materials, 2002, 31(4):327-31. [Scroll to bottom of page to view Abstract]

� Dublin City University (UK).� "Study of photoluminescence at 3.310 and 3.368 eV in GaN/sapphire(0001) and GaN/GaAs(001) grown by liquid-target pulsed-laser deposition."� Mah, K. W., Mosnier, J.-P., McGlynn, E., Henry, M. O., O'Mahony, D., and Lunney, J. G. in Applied Physics Letters, 2002, 80(18):3301-3. [ Abstract]

� �cole Polytechnic Federale de Lausanne (Switzerland).� "Microscopic evidence of point defect incorporation in laterally overgrown GaN."� Gradecak, S., Wagner, V., Ilegems, M., Riemann, T., Christen, J., and Stadelmann, P. in Applied Physics Letters, 2002, 80(16):2866-8. [ Abstract]

� ;Ghent University (Belgium).� "Rigorous electromagnetic analysis of dipole emission in periodically corrugated layers: the grating-assisted resonant-cavity light-emitting diode."� Delbeke, D., Bienstman, P., Bockstaele, R., and Baets, R. in Journal of the Optical Society of America A (Optics, Image Science and� Vision), 2002, 19(5):871-80. [ Abstract]

� Heriot-Watt University (UK).� "High-average-power Nd:YAG planar waveguide laser that is face pumped by 10� laser diode bars."� Lee, J. R., Baker, H., Friel, G. J., Hilton, G. J., and Hall, D. R. in Optics Letters, 2002, 27(7):524-6. [ Abstract]

� Insitute of Rare Metals (Russia).� "Band line-up and mechanisms of current flow in n-GaN/p-SiC and� n-AlGaN/p-SiC heterojunctions."� Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Kozhukhova, E. A., Luo, B., Kim, J., Mehandru, R., Ren, F., Lee, K. P., Pearton, S. J., Osinsky, A. V., and Norris, P. E. in Applied Physics Letters, 2002, 80(18):3352-4. [ Abstract]

� Korea Advanced Institute of Science and Technology (South Korea).� "Custom crystals control photons."� Yong Hee Lee and Han Youl Ryu in IEEE Circuits and Devices Magazine, 2002, 18(3):8-15. [Available to IEEE member subscribers, see table of contents online.]

� Linkoping University (Sweden) / University of California - La Jolla.� "Time-resolved studies of photoluminescence in GaNxP1�x alloys: Evidence for indirect-direct band gap crossover."� Buyanova, I. A., Pozina, G., Bergman, J. P., Chen, W. M., Xin, H. P., and Tu, C. W. in Applied Physics Letters, 2002, 81(1):52-54. [ Abstract]

� Lucent Technologies - Bell Laboratories / MIT / University of California - Santa Barbara.� "Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates."� Hsu, J. W. P., Manfra, M. J., Molnar, R. J., Heying, B., and Speck, J. S. in Applied Physics Letters, 2002, 81(1):79-81. [ Abstract]

� Macquarie University (Australia).� "Characterization of red emission in nominally undoped hydride vapor phase� epitaxy GaN."� Goldys, E. M., Godlewski, M., Paskova, T., Pozina, G., and Monemar, B. in MRS Internet Journal of Nitride Semiconductor Research, 2002, 7S1( [ Abstract]

� Manchester University (UK). "Extended tuning and single-mode operation of an anti-reflection-coated InGaN violet laser diode in a Littrow cavity." Lonsdale,D. J., Willis, A. P., and King, T. A. in Measurement Science & Technology, 2002, 13(4):488-93. [ Abstract]

� MIT.� "Slab-coupled 1.3- mu m semiconductor laser with single-spatial� large-diameter mode."� Walpole, J. N., Donnelly, J. P., Taylor, P. J., Missaggia, L. J., Harris, C. T., Bailey, R. J., Napoleone, A., Groves, S. H., Chinn, S. R., Huang, R., and Plant, J. in IEEE Photonics Technology Letters, 2002, 14(6):756-8. [Available to IEEE member subscribers, see table of contents online.]

� Nagoya Institute of Technology (Japan).� "Demonstration of an InGaN-based light-emitting diode on an AlN/sapphire template by metalorganic chemical vapor deposition."� Egawa, T., Ohmura, H., Ishikawa, H., and Jimbo, T. in Applied Physics Letters, 2002,b 81(2):292-294. [ Abstract]

� National Central University (Taiwan).� "White-light emission from InGaN-GaN multiquantum-well light-emitting diodes� with Si and Zn codoped active well layer."� Sheu, J. K., Pan, C. J., Chi, G. C., Kuo, C. H., Wu, L. W., Chen, C. H., Chang, S. J., and Su, Y. K. in IEEE Photonics Technology Letters, 2002, 14(4):450-2. [Available to IEEE member subscribers, see table of contents online.]

� National Cheng Kung University (Taiwan).� "InGaN/GaN tunnel-injection blue light-emitting diodes."� Wen, T. C., Chang, S. J., Wu, L. W., Su, Y. K., Lai, W. C., Kuo, C. H., Chen, C. H., Sheu, J. K., and Chen, J. F. in IEEE Transactions on Electron Devices, 2002, 49(6):1093-5. [Available to IEEE member subscribers, see table of contents online.]

� National Taiwan University (Taiwan) / National Chung Cheng University (Taiwan) / University of California-Santa Barbara.� "Femtosecond dynamics of exciton bleaching in bulk GaN at room temperature."� Huang, Y.-C., Chern, G.-W., Lin, K.-H., Liang, J.-C., Sun, C.-K., Hsu, C.-C., Keller, S., and DenBaars, S. P. in Applied Physics Letters, 2002, 81(1):85-87. [ Abstract]

� Nichia Corp.� �"Phosphor-conversion white light emitting diode using InGaN near-ultraviolet�chip."� Narukawa, Y., Niki, I., Izuno, K., Yamada, M., Murazaki, Y., and Mukai, T. in Japanese Journal of Applied Physics, Part 2 (Letters), 2002, 41(4A):L371-3. [ Abstract]

� NTT Corp. (Japan).�"Common-emitter current-voltage characteristics of a Pnp AlGaN/GaN� heterojunction bipolar transistor with a low-resistance base layer."� Kumakura, K., Makimoto, T., and Kobayashi, N. in Applied Physics Letters, 2002, 80(20):3841-3. [ Abstract]

� Paul-Drude-Institut f�r Festk�rperelektronik (Germany) / Ferdinand-Braun-Institut f�r H�chstfrequenztechnik (Germany).� "Type-II band alignment between GaAs and inadvertent interlayers at (In,Ga)P/GaAs interfaces."� Krispin, P. and Knauer, A. in Applied Physics Letters, 2002, 81(2):264-266. [ Abstract]

� Peking University (China).� "The morphology on the surface of the GaN homo-epitaxial film grown by� HVPE."� Zhou, J., Tang, Y. J., and Zhang, G. Y. in Solid State Communications, 2002, 121(6-7):381-4. [Click on Volume 121 Issues 6-7 then scroll to abstract]

� Philipps University (Germany) .� "Tunable blue laser based on intracavity frequency doubling with a� fan-structured periodically poled LiTaO₃ crystal."� Zimmermann, J., Struckmeier, J., Hofmann, M. R., and Meyn, J.-P. in Optics Letters, 2002, 27(8):604-6. [ Abstract]

� Sandia National Laboratories.� "Energy transfer and relaxation in europium-activated Y₂O₃ after excitation by ultraviolet photons."� Tallant, D. R., Seager, C. H., and Simpson, R. L. in Journal of Applied Physics, 2002, 91(7):4053-64. [ Abstract]

� Sandia National Laboratories.� "High power and good beam quality at 980 nm from a vertical external-cavity� surface-emitting laser."� Alford, W. J., Raymond, T. D., and Allerman, A. A. in Journal of the Optical Society of America B (Optical Physics), 2002, 19(4):663-6. [ Abstract]

� Sandia National Laboratories.� "Influence of AlN nucleation layer temperature on GaN electronic properties grown on SiC."� Koleske, D. D., Henry, R. L., Twigg, M. E., Culbertson, J. C., Binari, S. C., Wickenden, A. E., and Fatemi, M. in Applied Physics Letters, 2002, 80(23):4372-4374. [ Abstract]

� Sandia National Laboratories.� "The metal-organic chemical vapor deposition and properties of III-V antimony-based semiconductor materials."� Biefeld, R. M. in Materials Science and Engineering R-Reports, 2002, 36(4):105-142. [Click on Volume 36, then Issue 4 to access the abstract]

� Sandia National Laboratories.� "Nonequilibrium model for semiconductor laser modulation response."� Chow, W. W., Schneider, H. C., Koch, S. W., Chih-Hao Chang, Chrostowski, L., and Chang-Hasnain, C. J. in IEEE Journal of Quantum Electronics, 2002, 38(4):402-9. [ Available to IEEE member subscribers, see table of contents online.]

� Sandia National Laboratories.� "Out-of-plane losses of line-defect photonic crystal waveguides."� Hadley, G. R. in IEEE Photonics Technology Letters, 2002, 14(5):642-4. [ Available to IEEE member subscribers, see table of contents online.]

� Sandia National Laboratories.� "Theoretical investigation of laser gain in AlGaInN quaternary quantum wells."� Chow, W. W., Schneider, H. C., Fischer, A. J., and Allerman, A. A. in Applied Physics Letters, 2002, 80(14):2451-2453. [ Abstract]

� Sao Paulo University (Brazil).� "Origin of the radiative emission in blue-green light emitting diodes based on GaN/InGaN heterostructures."� Leite, J. R. in Microelectronics Journal, Conference Proceedings:� 1st Ibero-American Workshop on Semiconductor Nanostructures: Micro and Optoelectronics Applications, 20-24 Nov. 2000, Mexico City, Mexico, 2002, 33(4):323-9. [Click on Volume 33, Issue 4 then scroll to the abstract]

� Sony Shiroishi Semiconductors Inc. (Japan).� "High-power 400-nm-band AlGaInN-based laser diodes with low aspect ratio."� Asano, T., Takeya, M., Tojyo, T., Mizuno, T., Ikeda, S., Shibuya, K., Hino, T., Uchida, S., and Ikeda, M. in Applied Physics Letters, 2002, 80(19):3497-9. [ Abstract]

� South Carolina University.� "Luminescence mechanisms in quaternary Al_xIn _yGa _1-x-yN� materials."� Mee-Yi Ryu, Chen, C. Q., Kuokstis, E., Yang, J. W., Simin, G., and Khan, M. A. in Applied Physics Letters, 2002, 80(20):3730-2. [ Abstract]

� Stanford University.� "Multiple-quantum-well GaInNAs-GaNAs ridge-waveguide laser diodes operating� out to 1.4 mu m."� Ha, W., Gambin, V., Wistey, M., Bank, S., Seongsin Kim, and Harris, J. S. Jr. in IEEE Photonics Technology Letters, 2002, 14(5):591-3. [Available to IEEE member subscribers, see table of contents online.]

� UNIPRESS (Poland) / AIST (Japan) / University of Tsukuba (Japan).� "Different pressure coefficients of the light emission in cubic and hexagonal InGaN/GaNquantum wells."� Suski, T., Teisseyre, H., Lepkowski, S. P., Perlin,P., Kitamura, T., Ishida, Y., Okumura, H., and Chichibu, S. F. in Applied PhysicsLetters, 2002, 81(2):232-234. [ Abstract]

� University of California - La Jolla.� "Reduction ofreverse-bias leakage current in Schottky diodes on GaN grown by molecular-beamepitaxy using surface modification with an atomic force� microscope."� Miller, E. J., Schaadt, . M., Yu, E. T., Poblenz, C., Elsass, C., and Speck, J. S. in Journal of Applied Physics, 2002, 91(12):9821-6. [ Abstract]

� University of California - San Diego.� "Scanning Kelvin probemicroscopy of surface electronic structure in GaN� grown by hydride vapor phase epitaxy."� Simpkins, B. S., Schaadt, D. M., Yu, E. T., and Molnar, R. J. in Journal of Applied Physics, 2002, 91(12):9924-9. [ Abstract]

� University of Firenze (Italy).� "Generation of tunable green radiation in bulk periodically poled KTiOPO₄."� Zeppini, P., Cancio, P., Giusfredi, G., Mazzottia, D., Arie, A., Rosenman, G., and De Natale, P. in Optics and Lasers in Engineering, 2002, 37(5):553-63. [Click on Volume 37, Issue 5 then scroll to the Abstract]

� University of London (UK).� "Multiple parallel conduction paths observed in depth-profiled n-GaN epilayers."��Mavroidis, C., Harris, J. J., Jackman, R. B., Harrison, I.,Ansell, B. J., Bougrioua, Z., and Moerman, I. in Journal of Applied Physics, 2002, 91(12):9835-40. [ Abstract]

� Valencia University (Spain). "Role of defect centers in recombination processes in GaN monocrystals."�Joshi, N. V., Cros, A., Cantarero, A., Medina, H., Ambacher, O., and Stutzmann, M. in Applied Physics Letters, 2002, 80(16):2824-6. [ Abstract]

� Warsaw University (Poland).� "High resolution X-ray diffraction defect structure characterization in Si-doped and undoped GaN films. "Zielinska-Rohozinska, E., Regulska, M., Harutyunyan, V. S., Pakula, K., and Borowski, J. in Materials Science & Engineering B (Solid-State Materials for Advanced� Technology), 2002, B91-92(441-4. [ Click on Volumes 91-92 then scroll to abstract]

� Wright State University."Electrical profiles in GaN/Al ₂O ₃ layers with conductive interface regions. "Look, D. C., Hoelscher, J. E., Brown, J. L., and Via, G. D. in MRS Internet Journal of Nitride Semiconductor Research, 2002, 7S1( [ Abstract]

C. Lighting Systems

� Microvision Inc.� "Edge-emitting III-V LEDs illuminate wearable color microdisplays."� Altendorf, E. in Laser Focus World, 2002, 38(4):53-9. [Free user registration required to access Abstract]

D. Other White LED Lighting

� General Electric Global Research Center.� "Organic light-emitting devices for illumination quality white light."� Duggal, A. R., Shiang, J. J., Heller, C. M., and Foust, D. F. in Applied Physics Letters, 2002, 80(19):3470-2. [ Abstract]

� National Tsing Hua University (Taiwan).� "High-efficiency white organic light-emitting devices with dual doped� structure."� Yen-Shih Huang, Jou, J.-H., Wen-Kuo Weng, and Jia-Ming Liu in Applied Physics Letters, 2002, 80(15):2782-4. [ Abstract]

� National Tsing Hua University (Taiwan).� "White electroluminescence from hydrogenated amorphous-SiN_x thin� films."� Zingway Pei, Chang, Y. R., and Hwang, H. L. in Applied Physics Letters, 2002, 80(16):2839-41. [ Abstract]

� Sumitomo Electric Industries Ltd. (Japan).� "Effect of defects on the degradation of ZnSe-based white LEDs."� Shirakawa, T. in Materials Science & Engineering B (Solid-State Materials for Advanced� Technology), 2002, B91-92(470-5. [ Click on Volumes 91-92 then scroll to abstract ]

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NOTE: The provision of summaries and mention of specific manufacturers or products does not constitute an endorsement by Sandia National Laboratories or Perspectives; nor is the information presented warranted or guaranteed by either Sandia National Laboratories or Perspectives.

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