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ISSUE 12: SCIENTIFIC LITERATURE (Early February - Early April 2002) |
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From the Technical Literature The material in this section is selected from scientific and technical papers that became available during the reporting time period. Links to online abstracts are provided. Most online abstracts are freely accessible to the public. A few require journal subscriptions or memberships, and are noted as such. The technical literature section is roughly organized by subject area and, within subjects, alphabetically by institution of the lead author. Use the links below to go directly to a section. A. Materials and Device Fabrication B. Materials and Device Design Properties A. Materials and Device Fabrication • A. F. Ioffe Physical Technical Institute (Russia). "Initial stages of the GaN growth on oxidized silicon." VN Bessolov et al in Pis'ma v Zhurnal Tekhnicheskoi Fizika; 2002; 1010-12. [Abstract]
• Academy Sinica (China). "A new method to fabricate InGaN quantum dots by metalorganic chemical vapor deposition." Zhen Chen et al in Journal of Crystal Growth; 2002; 235(1-4):188-94. [Abstract] • Academy Sinica (China). "ECR plasma in growth of cubic GaN by low pressure MOCVD." Biao Gu et al in Plasma Chemistry and Plasma Processing; 2002; 22(1):159-74. [Harvard University Membership required] • Air Force Research Laboratory - Hanscom AFB. "Iodine vapor phase growth of GaN: dependence of epitaxial growth rate on process parameters." V Tassev et al in Journal of Crystal Growth; 2002; 235(1-4):140-8. [Abstract] • Canon Inc. (Japan). "Direct coupling of VCSELs to plastic optical fibers using guide holes patterned in a thick photoresist." T Ouchi et al in IEEE Photonics Technology Letters; 2002; 14(3):263-5. [ Abstract available to IEEE member subscribers, see table of contents online.] • Chiba University (Japan). "MOCVD growth of device-quality GaN on sapphire using a three-step approach." BL Liu et al in Journal of Crystal Growth; 2002; 234(4):637-45. [Abstract] • Chonbuk National University (South Korea). "Strong acceptor density and temperature dependences of thermal activation energy of acceptors in a Mg-doped GaN epilayer grown by metalorganic chemical-vapor deposition." MG Cheong et al in Applied Physics Letters; 2002; 80(6):1001-3. [Abstract] • CNRS (France). "C and CH{sub 4} as transport agents for the CVT growth of ZnO crystals." S Hassani et al in Physica Status Solidi B; 2002; 229(3):835-9. [Abstract] • Ecole Polytechnique (France). "High extraction efficiency, laterally injected, light emitting diodes combining microcavities and photonic crystals." M Rattier et al in Optical and Quantum Electronics; 2002; 34(1-3):79-89. [Harvard University Membership required] • Fudan University (China). "Synthesis of oxygen-free nanosized InN by pulse discharge." Wei-Dong Yang et al in Nanotechnology; 2002; 13(1):65-8. [Abstract] • Georgia Institute of Technology. "The heterogenous integration of GaN thin-film metal-semiconductor-metal photodetectors onto silicon." Sangwoo Seo et al in IEEE Photonics Technology Letters; 2002; 14(2):185-7. [ Abstract available to IEEE member subscribers, see table of contents online.] • Institute of Physics and Chemistry Research (Japan). "Room-temperature intense 320 nm band ultraviolet emission from quaternary InAlGaN-based multiple-quantum wells." H Hirayama et al in Applied Physics Letters; 2002; 80(9):1589-91. [Abstract] • Institute of Physics and Chemistry Research (Japan). "Fabrication of a low-threading-dislocation-density Al{sub x}Ga{sub 1-x}N buffer on SiC using highly Si-doped Al{sub x}Ga{sub 1-x}N superlattices." H Hirayama et al in Applied Physics Letters; 2002; 80(12):2057-9. [Abstract] • Instituto Politécnico Naciona (Mexico). "Growth and characterization of GaInN{sub x}As{sub 1-x} thin films with band-gap energies in the red-blue portion of the visible spectrum." JA Cardona-Bedoya et al in Applied Physics Letters; 2002; 80(11):1900-2. [Abstract] • Justus-Liebig University (Germany). "Heteroepitaxy of ZnO on GaN templates." A Zeuner et al in Physica Status Solidi B; 2002; 229(2):907-10. [Abstract] • Justus-Liebig University (Germany). "Modulated growth of thick GaN with hydride vapor phase epitaxy." W Zhang et al in Journal of Crystal Growth; 2002; 234(4):616-22. [Abstract] • Keio University (Japan). "Growth of GaN on Si substrates-roles of BP thin layer." S Nishimura et al in Optical Materials, Conference Proceedings: Photonic Materials for the 21st Century. 2nd International Symposium on Laser, Scintillator and Nonlinear Optical Materials, 28-31 May 2000, Lyon, France; 2002; 19(1): 223-8. [Abstract not available] • Kwangju Institute of Science and Technology (South Korea). "Periodic oxide breakdown during oxidation of AlN/Sapphire(0001) films." HC Kang et al in Applied Physics Letters; 2002; 80(8):1364-6. [Abstract] • Kyoto University (Japan). "Wider bandwidth with high transmission through waveguide bends in two-dimensional photonic crystal slabs." A Chutinan et al in Applied Physics Letters; 2002; 80(10):1698-1700. [Abstract] • Lawrence Berkeley National Laboratory . "Continuous phase diagramming of epitaxial films." Y Yoo et al in MRS Bulletin; 2002; 27(4): [Access to abstract requires membership] • Max Planck Institute fur Festkoperforschung (Germany). "Interface of directly bonded InP wafers for vertical couplers." NY Jin-Phillipp et al in Applied Physics Letters; 2002; 80(8):1346-8. [Abstract] • Meijo University (Japan). "Low-dislocation-density GaN and Al{sub x}Ga{sub 1-x}N (x<or=0.13) grown on grooved substrates." S Sano et al in Journal of Crystal Growth; 2002; 235(1-4):129-34. [Abstract] • Nagoya Institute of Technology (Japan). "Orientation control of zinc oxide films by pulsed current electrolysis." K Nomura et al in Journal of Crystal Growth; 2002; 235(1-4):224-8. [Abstract] • National Central University (Taiwan). "Effect of composition inhomogeneity on the photoluminescence of InGaN/GaN multiple quantum wells upon thermal annealing." Chang-Cheng Chuo et al in Applied Physics Letters; 2002; 80(7):1138-40. [Abstract] • National Chiao Tung University (Taiwan). "Real index-guided InGaAlP red lasers with buried tunnel junctions." TC Lu et al in Applied Physics Letters; 2002; 80(11):1882-4. [Abstract] • Paul-Drude-Institute fur Festkorperelektronik (Germany). "Electron traps in Ga(As,N) layers grown by molecular-beam epitaxy." P Krispin et al in Applied Physics Letters; 2002; 80(12):2120-2. [Abstract] • Tohoku University (Japan). "Control of crystal polarity in a wurtzite crystal: ZnO films grown by plasma-assisted molecular-beam epitaxy on GaN." Soon-Ku Hong et al in Physical Review B (Condensed Matter and Materials Physics); 2002; 65(11):115331-1-10. [Abstract] • Tokushima University (Japan). "Influence of rotation speed of substrate on the growth mechanism of InGaN/GaN multiple quantum wells grown by six-wafer metal organic chemical vapor deposition system." HX Wang et al in Journal of Crystal Growth; 2002; 235(1-4):183-7. [Abstract] • Ulm University (Germany). "MOCVD growth of ZnO on different substrate materials." Th Gruber et al in Physica Status Solidi B; 2002; 229(3):841-4. [Abstract] • Universidad Federale de Minas Gerais (Brazil). "Interplay between direct gap renormalization and intervalley scattering in Al{sub x}Ga{sub 1-x}As near the Gamma -X crossover." LHF Andrade et al in Solid State Communications; 2002; 121(4):181-5. [Requires a Science Direct subscription to access abstract] • Universidad Politecnica de Madrid (Spain). "Resonant-cavity InGaN multiple-quantum-well green light-emitting diode grown by molecular-beam epitaxy." FB Naranjo et al in Applied Physics Letters; 2002; 80(12):2198-200. [Abstract] • University de les Illes Baleares (Spain). "Spatio-temporal modeling of the optical properties of VCSELs in the presence of polarization effects." J Mulet et al in IEEE Journal of Quantum Electronics; 2002; 38(3):291-305. [ Abstract available to IEEE member subscribers, see table of contents online.] • University of California - La Jolla. "Transport properties of the advancing interface ohmic contact to AlGaN/GaN heterostructures." D Qiao et al in Applied Physics Letters; 2002; 80(6):992-4. [Abstract] • University of Cinncinati. "Lateral color integration on rare-earth-doped GaN electroluminescent thin films." DS Lee et al in Applied Physics Letters; 2002; 80(11):1888-90. [Abstract] • University of Karlsruhe (Germany). "Influence of metalorganic chemical vapor deposition growth conditions on In-rich nanoislands formation in InGaN/GaN structures." YuG Musikhin et al in Applied Physics Letters; 2002; 80(12):2099-101. [Abstract] • University of New Mexico. "Thermal annealing effect on nitrogen vacancy in proton-irradiated Al{sub x}Ga{sub 1-x}N." Qiaoying Zhou et al in Applied Physics Letters; 2002; 80(12):2072-4. [Abstract] • University of Southampton (UK). "Photoconductivity in confined gallium." VA Fedotov et al in Applied Physics Letters; 2002; 80(7):1297-1299. [Abstract] • US Naval Research Laboratory. "An X-ray rocking curve technique for the absolute characterization of epitaxial layers and single-crystal solids." M Fatemi in Applied Physics Letters; 2002; 80(6):935-7. [Abstract] • Vienna University of Technology (Austria). "Delayed nucleation during molecular-beam epitaxial growth of GaN observed by line-of-sight quadrupole mass spectrometry." G Koblmuller et al in Applied Physics Letters; 2002; 80(13):2281-3. [Abstract] • West Virginia University. "Production of nitrogen acceptors in ZnO by thermal annealing." NY Garces et al in Applied Physics Letters; 2002; 80(8):1334-6. [Abstract] • Wisconsin University. "Lateral epitaxial overgrowth of GaN using diethyl gallium chloride in metal organic vapor phase epitaxy." L Zhang et al in Journal of Crystal Growth; 2002; 235(1-4):115-23. [Abstract] B. Materials and Device Design Properties • Academy of Sciences (Russia). "Polarized microphotoluminescence and reflectance spectroscopy of GaN with k perpendicular to c: Strongly pi -polarized line near the A exciton." TV Shubina et al in Physical Review B (Condensed Matter and Materials Physics); 2002; 65(7):075212-1-11. [Abstract] • Academy Sinica (China). "Effect on the optical properties and surface morphology of cubic GaN grown by metalorganic chemical vapor deposition using isoelectronic indium surfactant doping." ZH Feng et al in Journal of Crystal Growth; 2002; 235(1-4):207-11. [Abstract] • Australian National University. "X-ray spectrometry investigation of electrical isolation in GaN." SO Kucheyev et al in Journal of Applied Physics; 2002; 91(6):3940-2. [Abstract] • Bristol University (UK). "Raman mapping, photoluminescence investigations, and finite element analysis of epitaxial lateral overgrown GaN on silicon substrates." M Benyoucef et al in Applied Physics Letters; 2002; 80(13):2275-7. [Abstract] • British Columbia University (Canada). "Dispersion and lifetimes of electromagnetic modes attached to strongly textured slab waveguides." V Pacradouni et al in Optical and Quantum Electronics; 2002; 34(1-3):161-9. [Harvard University Membership required] • Central Florida University. "Correlations between spatially resolved Raman shifts and dislocation density in GaN films." G Nootz et al in Applied Physics Letters; 2002; 80(8):1355-7. [Abstract] • Chalmers University of Technology (Sweden). "A comprehensive model for the modal dynamics of vertical-cavity surface-emitting lasers." JS Gustavsson et al in IEEE Journal of Quantum Electronics; 2002; 38(2):203-12. [ Abstract available to IEEE member subscribers, see table of contents online.] • Chonbuk National University (South Korea). "GaN tunnel junction as a current aperture in a blue surface-emitting light-emitting diode." Seong-Ran Jeon et al in Applied Physics Letters; 2002; 80(11):1933- [Abstract] • Chungbuk National University (South Korea). "Spatially resolved cathodoluminescence of laterally overgrown GaN pyramids on (111) silicon substrate: Strong correlation between structural and optical properties." Yong-Hoon Cho et al in Applied Physics Letters; 2002; 80(7):1141-3. [Abstract] • CNRS (France). "Properties of a hole trap in n-type hexagonal GaN." P Muret et al in Journal of Applied Physics; 2002; 91(5):2998-3001. [Abstract] • Ecole Polytechnique Federale de Lausanne (Switzerland). "Experimental determination of the internal quantum efficiency of AlGaInP microcavity light-emitting diodes." P Royo et al in Journal of Applied Physics ; 2002; 91(5):2563-8. [Abstract] • Essen University (Germany). "Structural and optical properties of epitaxial and bulk ZnO." A Zeuner et al in Applied Physics Letters; 2002; 80(12):2078-80. [Abstract] • Heriot-Watt University (UK). "Giant permanent dipole moments of excitons in semiconductor nanostructures." RJ Warburton et al in Physical Review B (Condensed Matter and Materials Physics); 2002; 65(11):113303-1-4. [Abstract] • Hong Kong Polytechnical University (China). "Characterization of deep levels in Pt-GaN Schottky diodes deposited on intermediate-temperature buffer layers." BH Leung et al in IEEE Transactions on Electron Devices; 2002; 49(2):314-18. [ Abstract available to IEEE member subscribers, see table of contents online.] • Hong Kong University (China). "Dependence of the excitonic transition energies and mosaicity on residual strain in ZnO thin films." HC Ong et al in Applied Physics Letters; 2002; 80(6):941-3. [Abstract] • Hong Kong University (Taiwan). "Low-frequency noise in GaN thin films deposited by rf-plasma assisted molecular-beam epitaxy." BH Leung et al in Journal of Applied Physics; 2002; 91(6):3706-10. [Abstract] • Institute Preparatoire sux Etudes Science et Technologie (Tunisia). "Effect of nitrogen and temperature on the electronic band structure of GaAs{sub 1-x}N{sub x} alloys." R Chtourou et al in Applied Physics Letters; 2002; 80(12):2075-7. [Abstract] • IRSAMC-University Paul Sabatiere (France). "Raman scattering in GaN pillar arrays." F Demangeot et al in Journal of Applied Physics; 2002; 91(5):2866-9. [Abstract] • Israel Institute of Technology (Israel). "Scattering of polaritons by a two-dimensional electron gas in a semiconductor microcavity. " G Ramon et al in Physical Review B (Condensed Matter and Materials Physics); 2002; 65(8):085323-1-5. [Abstract] • J. W. Goethe-Universität (Germany) / MPI für Physik komplexer Systeme (Germany) / Fraunhofer-Insitut für Angewandte Festkörperphysik (Germany). "Coherent Hall Effect in a Semiconductor Superlattice." T Bauer et al in Physical Review Letters; 2002; 88(086801). [Abstract] • Japan Science and Technology Corporation (Japan). "Observation of size-dependent features in the photoluminescence of zinc oxide nanocrystallites by near-field ultraviolet spectroscopy." T Yatsui et al in Applied Physics Letters; 2002; 80(8):1444-6. [Abstract] • Jiao Tong University (China). "Bandtail characteristics in InN thin films." WZ Shen et al in Applied Physics Letters; 2002; 80(12):2063-5. [Abstract] • Kansas State University. "Optical and electrical properties of Mg-doped p-type Al{sub x}Ga{sub 1-x}N." J Li et al in Applied Physics Letters; 2002; 80(7):1210-12. [Abstract] • Korea Advanced Institute of Science and Technology (South Korea). "Characterization of pit formation in III-nitrides grown by metalorganic chemical vapor deposition." HK Cho et al in Applied Physics Letters; 2002; 80(8):1370-2. [Abstract] • Kyoto University (Japan). "Effects of internal electric field and carrier density on transient absorption spectra in a thin GaN epilayer." K Omae et al in Physical Review B (Condensed Matter and Materials Physics); 2002; 65(7):073308-1-4. [Abstract] • Linkoping University (Sweden). "Effect of n-type modulation doping on thephotoluminescence of GaN/Al{sub 0.07}Ga{sub 0.93}N multiple quantum wells." H Haratizadeh et al in Applied Physics Letters; 2002; 80(8):1373-5. [Abstract] • Linkoping University (Sweden). "Misfit defect formation in thick GaN layers grown on sapphire by hydride vapor phase epitaxy." E Valcheva et al in Applied Physics Letters; 2002; 80(9):1550-2. [Abstract] • Meijo University (Japan). "Critical issues in AlGa{sub 1-x}N growth." H Amano et al in Optical Materials, Conference Proceedings: Photonic Materials for the 21st Century. 2nd International Symposium on Laser, Scintillator and Nonlinear Optical Materials, 28-31 May 2000, Lyon, France; 2002; 19(1):219-22. [Abstract not available] • NASA Marshall Space Flight Center. "Energy gap in GaN bulk single crystal between 293 and 1237 K." Ching-Hua Su et al in Journal of Crystal Growth; 2002; 235(1-4):111-14. [Abstract] • National Cheng Kung University (Taiwan). "High brightness green light emitting diodes with charge asymmetric resonance tunneling structure." CH Chen et al in IEEE Electron Device Letters; 2002; 23(3):130-2. [ Abstract available to IEEE member subscribers, see table of contents online.] • North Carolina State University. "Strain and crystallographic tilt in uncoalesced GaN layers grown by maskless pendeoepitaxy." S Einfeldt et al in Applied Physics Letters; 2002; 80(6):953-5. [Abstract] • North Carolina State University. "Electrical, structural and microstructuralcharacteristics of as-deposited and annealed Pt and Au contacts on chemical-vapor-cleaned GaN thin films." EA Preble et al in Journal of Applied Physics; 2002; 91(4):2133-7. [Abstract] • North Carolina State University. "Hot electrons in group-III nitrides at moderate electric fields." EA Barry et al in Applied Physics Letters; 2002; 80(13):2317-19. [Abstract] • Northwestern University. "Characteristics of high-quality p-type Al{sub x}Ga{sub 1-x}N/GaN superlattices." A Yasan et al in Applied Physics Letters; 2002; 80(12):2108-10. [Abstract] • Nottingham University (UK). "X-ray studies of As-doped GaN grown by plasma-assisted molecular beam epitaxy." T Li et al in Journal of Crystal Growth; 2002; 235(1-4):103-10. [Abstract] • Oak Ridge National Laboratory. "Excitation of thermographic phosphors using a blue light emitting diode: Spectral characteristics and instrumentation applications." SW Allison et al in Review of Scientific Instruments; 2002; 73(4):1832-4. [Abstract] • Otto-von-Guericke University (Germany). "Microscopic analysis of high quality thick ZnO CVD layers: Imaging of growth domains, strain relaxation, and impurity incorporation." T Riemann et al in Physica Status Solidi B; 2002; 229(3):891-5. [Abstract] • Peking University (China). "Influence of different types of threading dislocations on the carrier mobility and photoluminescence in epitaxial GaN." JY Shi et al in Applied Physics Letters; 2002; 80(13):2293-5. [Abstract] • Pretoria University (South Africa). "Optical properties of as-grown and proton irradiated ZnO." DJ Brink et al in Physica Status Solidi B; 2002; 229(3):859-62. [Abstract] • Rensselaer Polytechic Institute. "Acoustic phonon scattering of two-dimensional electrons in GaN/AlGaN heterostructures." W Knap et al in Applied Physics Letters; 2002; 80(7):1228-30. [Abstract] • Rensselaer Polytechnic Institute / Sensor Electronic Technology Inc. / University of South Carolina. "Acousto-optic diffraction of blue and red light in GaN." D Ciplys et al in Applied Physics Letters; 2002; 80(10):1701-1703. [Abstract] • RIKEN (Japan). "Well-width dependence of radiative and nonradiative lifetimes in ZnO-based multiple quantum wells." CH Chia et al in Physica Status Solidi B; 2002; 229(3):863-6. [Abstract] • Royal Institute of Technology (Sweden). "Characterization of heterojunction diodes with hydride vapor phase epitaxy grown AlGaN on 4H-SiC." E Danielsson et al in Journal of Applied Physics; 2002; 91(4):2372-9. [Abstract] • Samsung Advanced Institute of Technology (South Korea). "Growth and optical properties of GaN on Si(111) substrates." In-Hwan Lee et al in Journal of Crystal Growth; 2002; 235(1-4):73-8. [Abstract] • San Jose State University. "Spectroscopic properties of Sm{sup 3+}(4f {sup 5}) in GaN." JB Gruber et al in Journal of Applied Physics; 2002; 91(5):2929-35. [Abstract] • Seoul National University (South Korea). "Effect of the number of wells on optical and structural properties in InGaN quantum well structures grown by metalorganic chemical vapor deposition." H-K Yuh et al in Journal of Applied Physics; 2002; 91(5):3483-5. [Abstract] • SFA Inc. "Magneto-optical studies of free-standing hydride-vapor-phase epitaxial GaN." WJ Moore et al in Physical Review B (Condensed Matter and Materials Physics); 2002; 65(8):081201-1-4. [Abstract] • Shizuoka University (Japan). "Effect of buffer-layer engineering on the polarity of GaN films." M Sumiya et al in Journal of Vacuum Science & Technology A (Vacuum, Surfaces, and Films); 2002; 20(2):456-8. [Access to abstract requires membership] • South Carolina University. "Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells." E Kuokstis et al in Applied Physics Letters; 2002; 80(6):977-9. [Abstract] • Technion-Israel Institute of Technology (Israel). "Continuous-wave and time-resolved optically detected magnetic resonance studies of nonetched/etched InP nanocrystals." L Langof et al in Journal of Physical Chemistry B; 2002; 106(7):1606-12. [Requires ACS subscription to access abstract] • Technische University of Berlin (Germany). "A quantitative analysis of two-colour pump and probe spectra from bound excitons in compensated II-VI semiconductors." I Broser et al in Physica Status Solidi B; 2002; 229(3):617-20. [Abstract] • Tohoku University (Japan). "Bound biexciton photoluminescence in ZnO epitaxial thin films." A Yamamoto et al in Physica Status Solidi B; 2002; 229(3):871-5. [Abstract] • Totota Technological Institute (Japan). "Thermal annealing study of 1 MeV electron-irradiation-induced defects in n{sup +}p InGaP diodes and solar cells." A Khan et al in Journal of Applied Physics; 2002; 91(4):2391-7. [Abstract]. • Tottori University (Japan). "Mechanism of slow-mode degradation in II-VI wide bandgap compound based blue-green laser diodes." M Adachi et al in Physica Status Solidi B; 2002; 229(3):1049-53. [Abstract] • University College of Cork (Ireland). "80 degrees C continuous wave operation of AlGaInP based visible VCSEL." T Calvert et al in Electronics Letters; 2002; 38(5):222-3. [ Link to journal home page; requires subscription] • University of California - Los Angeles. "Hydrogen adsorption on phosphorus-rich (2*1) indium phosphide (001)." Q Fu et al in Physical Review B (Condensed Matter and Materials Physics); 2002; 65(7):075318-1-6. [Abstract]. • University of California - Santa Barbara. "Morphological and optical properties of InGaN laser diodes on laterally overgrown GaN." M Hansen et al in Journal of Crystal Growth; 2002; 234(4):623-30. [Abstract] • University of Florida. "Microstructure and thermal stability of aluminum nitride thin films deposited at low temperature on silicon." KK Harris et al in Journal of the Electrochemical Society; 2002; 149(2):G128-30. [Abstract] • University of Illinois. "In-plane bandgap control in porous GaN through electroless wet chemical etching." Xiuling Li et al in Applied Physics Letters; 2002; 80(6):980-2. [Abstract] • University of Ohio. "Thin-film electroluminescent devices grown on plastic substrates using an amorphous AlN:Tb{sup 3+} phosphor." HH Richardson et al in Applied Physics Letters; 2002; 80(12):2207-9. [Abstract] • University of Tokyo (Japan). "Characterization of the bonding strength and interface current of p-Si/n-InP wafers bonded by surface activated bonding method at room temperature." MMR Howlader et al in Journal of Applied Physics; 2002; 91(5):3062-6. [Abstract] • University of Wisconsin. "Stress-based prediction of dislocation generation in GaN during lateral epitaxial overgrowth." Z Feng et al in Applied Physics Letters; 2002; 80(9):1547-9. [Abstract] • US Air Force Institute of Technology - Wright-Patterson AFB. "Electrical activation studies of GaN implanted with Si from low to high dose." JA Fellows et al in Applied Physics Letters; 2002; 80(11):1930-2. [Abstract] • US Naval Research Laboratory. "Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition." ER Glaser et al in Physical Review B (Condensed Matter and Materials Physics); 2002; 65(8):085312-1-10. [Abstract] • Zhejiang University (China). "An investigation of structural, optical and electrical properties of GaN thin films grown on Si(111) by reaction evaporation." Haoxiang Zhang et al in Solid-State Electronics; 2002; 46(2):301-6. Requires a Science Direct subscription to access [Abstract] C. Packaging and Reliability • National Science Council (Taiwan). "An improved light-emitting element driver." Tai-Shan Liao in Review of Scientific Instruments ; 2002; 73(4):1965-6. [Abstract] • Rensselaer Polytechic Institute. "LED package designs tackle lumen depreciation issues." N Narendran et al in Compound Semiconductor; 2002; 8(1):45-6. [Abstract]. D. Lighting Systems • Osram Opto Semiconductor (Germany). "Resonators provide LEDs with laser-like performance." R Wirth et al in Compound Semiconductor; 2002; 8(1):49-50, 52-3. [Abstract] |
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