ISSUE 11:  SCIENTIFIC LITERATURE (Mid-October 2001 – Early February 2002)

From the Technical Literature

The material in this section is selected from scientific and technical papers that became available during the reporting time period.  Links to online abstracts are provided.  Most online abstracts are freely accessible to the public.  A few require journal subscriptions or memberships, and are noted as such.

The scientific literature section roughly divided by subject:

A. Materials and Device Fabrication

        1. Epitaxy – MBE and MBE-like

        2. Epitiaxy -- OMVPE

        3. Novel Substrates (Bulk, ELO, HVPE, etc.)

        4. Processing

B. Materials and Device Design and Properties

        1. Epimaterials (bulk)

        2. Epimaterials (0D, 1D and 2D)

        3. Optoelectronic Devices

C. Packaging and Reliability

D. Lighting Systems

E. Technology, Business and Public Policy

Within each section, papers are alphabetized by institution of the lead author.  Use the links above to go to the sections of interest.

A.     Materials and Device Fabrication

1.      Epitaxy (MBE and MBE-like)

Arizona State University. "The nature of arsenic incorporation in GaN."  A Bell et al  in Applied Physics Letters; 2001; 79(20):3239-3241. Abstract

Carnegie Mellon University.  "Role of Ga flux in dislocation reduction in GaN films grown on SiC(0001)."  CD Lee et al  in Applied Physics Letters; 2001; 79(21):3428-3430. Abstract

CEA (France).  "Surfactant effect of gallium during molecular-beam epitaxy of GaN on AlN (0001) : art. no. 195406."  G Mula et al  in Physical Review B; 2001; 6419(19):5406-+. Abstract

CNR (Italy).  "Role of sapphire nitridation temperature on GaN growth by plasma assisted  molecular beam epitaxy: Part II. Interplay between chemistry and structure  of layers. "  M Losurdo et al  in Journal of Applied Physics; 2002; 91(4):2508-18. Abstract

Georgia Institute of Technology.  "Role of sapphire nitridation temperature on GaN growth by plasma assisted  molecular beam epitaxy: Part I. Impact of the nitridation chemistry on  material characteristics." Gon Namkoong et al  in Journal of Applied Physics; 2002; 91(4):2499-507. Abstract

Hong Kong Polytechnical University (Peoples Republic of China).  "High-mobility GaN epilayer grown by RF plasma-assisted molecular beam epitaxy on intermediate-temperature GaN buffer layer."   WK Fong et al  in Journal of Crystal Growth; 2001; 233(3):431-438. Abstract

Linkoping University (Sweden).  "Formation of nonradiative defects in molecular beam epitaxial GaN{sub x}As{sub 1-x} studied by optically detected magnetic resonance."  NQ Thinh et al  in Applied Physics Letters; 2001; 79(19):3089-91. Abstract

National Institute for Lasers Plasma and Radiation Physics (Romania).  " Reactive pulsed laser deposition of InN thin films."  RE Morjan et al  in Proceedings of the SPIE - The International Society for Optical Engineering; 2001; 4430(310-16). Abstract

National Institute of Advanced Industrial Science and Technology (Japan).  "Growth and characterization of InGaN/GaN multiple quantum wells on  Ga-polarity GaN by plasma-assisted molecular beam epitaxy."  XQ Shen et al  in Physica Status Solidi B, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 228(1):99-102. Abstract

No institutional affiliation given.  "Sequential process of atomic layer epitaxy under the conditions of gas flow  and high vacuum."  A Szczerbakow in Elektronika; 2001; 42(8-9):20-2. Abstract

North Carolina State University.  "Kinetics and gas-surface dynamics of GaN homoepitaxial growth using NH3-seeded supersonic molecular beams."  AJ McGinnis et al  in Surface Science; 2001; 494(1):28-42. Abstract

Nottingham University (UK).  "The influence of arsenic incorporation on the optical properties of  As-doped GaN films grown by molecular beam epitaxy using arsenic  tetramers."  SV Novikov et al  in Physica Status Solidi B, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 228(1):227-9. Abstract

Osaka Institute of Technology (Japan).  "Mutual influence among inert nitrogen molecules, nitrogen radical atoms, nitrogen radical molecules and nitrogen molecular ions on growth process and crystal structure of GaN heteroepitaxial layers grown on Si(001) and Si(111) substrates by molecular-beam epitaxy assisted by electron cyclotron resonance."  T Yodo et al  in Journal of Crystal Growth; 2001; 233(1-2):22-33. Abstract

Paul-Drude-Inst. fur Festkorperelektronik (Germany). "Indium surface segregation during growth of (In,Ga)N/GaN multiple quantum  wells by plasma-assisted molecular beam epitaxy."  P Waltereit et al  in Physica Status Solidi B, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 228(1):49-53. Abstract

Rensselaer Polytechic Institute.  "Morphology of facets on vapor-grown AlN crystals."  NL Yakovlev et al  in Surface Science, Conference Proceedings:  ISSI PDSC-2000. International Symposium on Surface and Interface:  Properties of Different Symmetry Crossing 2000, 17-20 Oct. 2000, Nagoya,  Japan; 2001; 493(1-3):519-25. [Abstract not available online]

Ritsumeikan University (Japan).  "Polarity of high-quality indium nitride grown by RF molecular beam epitaxy."   Y Saito et al  in Physica Status Solidi B-Basic Research; 2001; 228(1):13-16. Abstract

University of Bremen (Germany).  "In as a surfactant for the growth of GaN (0001) by plasma assisted molecular-beam epitaxy."  C Kruse et al  in Applied Physics Letters; 2001; 79(21):3425-3427.
Abstract

University of California-Santa Barbara.  "Influence of Ga flux on the growth and electron transport properties of AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy."   CR Elsass et al  in Journal of Crystal Growth; 2001; 233(4):709-716. Abstract

University of California-Santa Barbara.  "Influence of growth temperature and thickness of AlGaN caps on electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy."  CR Elsass et al  in Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers; 2001; 40(11):6235-6238. Abstract

University of Complutense Madrid (Spain).  "Inhomogeneous incorporation of In and Al in molecular beam epitaxial AlInGaN films."  A Cremades et al  in Journal of Applied Physics; 2001; 90(9):4868-4870. Abstract

University of Nottingham (UK).  "The influence of As on the optimum nitrogen to gallium ratio required to grow high quality GaN films by molecular beam epitaxy."  CT Foxon et al  in Physica Status Solidi B-Basic Research; 2001; 228(1):219-222. Abstract

University of Thessaloniki (Greece).  "Misfit relaxation of the AlN/Al2O3 (0001) interface : art. no. 195329."   T Kehagias et al  in Physical Review B; 2001; 6419(19):5329-+.  Abstract

University of Tokyo (Japan).  "Nanometric inversion domains in conventional molecular-beam-epitaxy GaN  thin films observed by atomic-resolution high-voltage electron microscopy."  C Iwamoto et al  in Applied Physics Letters; 2001; 79(24):3941-3. Abstract

University of Tsukuba (Japan).  "Substrate roughness dependence of structural and optical properties of  Eu-doped GaN grown by gas source molecular beam epitaxy."  Zhiqiang Li et al  in Journal of Crystal Growth; 2002; 234(1):25-31. Abstract

Virginia Commonwealth University.  "Polarity of GaN grown on sapphire by molecular beam epitaxy with different  buffer layers."  D Huang et al  in Physica Status Solidi A, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 188(2):571-4. Abstract

Wuhan University (PRC).  "Properties of AlN(100) thin films prepared by reactive laser ablation."  Hong-Hai Wang in Modern Physics Letters B; 2001; 15(24):1069-75. Abstract

2.      Epitaxy (OMVPE)

A.F. Ioffe Physical Technical Institute (Russia).  "Growth and characterization of AlGaN/GaN superlattices."  WV Lundin et al  in Physica Status Solidi A, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 188(2):885-8. Abstract

Academy Sinica (PRC).  "Investigation of {111}A and {111}B planes of c-GaN epilayers grown on GaAs(001) by MOCVD."  XH Zheng et al  in Journal of Crystal Growth; 2001; 233(1-2):52-6. [ access to abstract requires membership]"

Academy Sinica (Taiwan).  "Resistive heated MOCVD deposition of InN films."  Jih-Shang Hwang et al  in Materials Chemistry and Physics, Conference Proceedings:  Taiwan Diamond 2000. Taiwan International Diamond and Related Materials  Science and Technology Symposium, 30 July-2 Aug. 2000, Taipei, Taiwan; 2001; 72(2):290-5.  [Abstract available to subscribing institutions of Science Direct, see online issue list. ]

AF Ioffe Physical-Technical Institute of Russian Academy of Sciences (Russia).  "Comparative study of InGaN/GaN structures grown by MOCVD using various growth sequences."  AV Sakharov et al  in Physica Status Solidi B-Basic Research; 2001; 228(1):95-98. Abstract

Arizona State University.  "Experimental determination of the rates of decomposition and cation desorption from AlN surfaces."  ZY Fan et al  in Materials Science and Engineering B-Solid State Materials for Advanced Technology; 2001; 87(3):244-248. Abstract

Arizona State University.  "Phase separation in InGaN epitaxial layers."  AN Westmeyer et al  in Physica Status Solidi B, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001, Denver, CO, USA; 2001; 228(1):161-4. Abstract

Aveiro University (Portugal).  "Compositional pulling effects in InxGa1-x/GaN layers: A combined depth-resolved cathodoluminescence and Rutherford backscattering/channeling study : art. no. 205311."  S Pereira et al  in Physical Review B; 2001; 6420(20):5311-+. Abstract

Aveiro University (Portugal).  "Indium distribution within InxGa1-xN epitaxial layers: A combined resonant Raman scattering and Rutherford backscattering study."  R Correia et al  in Physica Status Solidi B-Basic Research; 2001; 228(1):173-177.  Abstract

Aveiro University (Portugal).  "Depth resolved studies of indium content and strain in InGaN layers."  S Pereira et al  in Physica Status Solidi B, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 228(1):59-64. Abstract

Aveiro University (Portugal).  "Indium distribution within In{sub x}Ga{sub 1-x}N epitaxial layers: a  combined resonant Raman scattering and Rutherford backscattering study."  R Correia et al  in Physica Status Solidi B, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 228(1):173-7. Abstract

Chiba University (Japan).  "In-situ monitoring of surface stoichiometry and growth kinetics study of GaN (0001) in MOVPE by spectroscopic ellipsometry."  Y Taniyasu et al  in Journal of Electronic Materials; 2001; 30(11):1402-1407. Abstract  (scroll to abstract)

Chiba University (Japan).  "A new "three-step method" for high quality MOVPE growth of III-nitrides on  sapphire."  A Yoshikawa et al  in Physica Status Solidi A, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 188(2):625-8. Abstract

Chinese Academy of Sciences (PRC).  "Quasi-thermodynamic analysis of MOVPE growth of Ga{sub x}Al{sub y}In{sub  1-x-y}N."  Da-Cheng Lu et al  in  Journal of Crystal Growth; 2002; 234(1):145-52.   Abstract

Chonbuk National University (South Korea).  "Effects of growth interruption on the optical and the structural properties of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition."  MG Cheong et al  in Journal of Applied Physics; 2001; 90(11):5642-5646. Abstract

Chonbuk National University (South Korea).  "Characterization of Mg-doped GaN micro-crystals grown by direct reaction of  gallium and ammonia."  SH Lee et al  in Physica Status Solidi B, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 228(2):371-3.  Abstract

CNR (Italy).   "Influence of the N-2/H-2 ratio on the structural features of InxGa1-xN/GaN films grown by MOCVD."  E Piscopiello et al  in Materials Science and Engineering B-Solid State Materials for Advanced Technology; 2001; 87(3):237-243. Abstract

CNRS (France).  "In situ growth monitoring of distributed GaN-AlGaN Bragg reflectors by  metalorganic vapor phase epitaxy."  HPD Schenk et al  in Applied Physics Letters; 2002; 80(2):174-6.  Abstract

Fukui University (Japan).  "Detection of nanopipes in GaN films by localized avalanche breakdown using NaOH electrolyte."  M Ohkubo in Japanese Journal of Applied Physics Part 2-Letters; 2001; 40(11B):L1241-L1243. Abst . Abstract

Fukui University (Japan).  "Non-monotonous behavior of In-doped GaN grown by MOVPE with nitrogen  carrier gas."  A Yamamoto et al  in Physica Status Solidi B, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 228(1):239-42. Abstract

Institute of Electronic Materials Technology (Poland).  "Synthesis of GaN by reactive sputtering at low temperature."  A Jagoda et al  in 3rd International Conference `Novel Applications of Wide Bandgap Layers',  26-30 June 2001, Zakopane, Poland; 2001;   [Abstract not available online.]

Kanagawa University (Japan).  "Metalorganic vapor phase epitaxy growth of crack-free AlN on GaN and its application to high-mobility AlN/GaN superlattices."  S Yamaguchi et al  in Applied Physics Letters; 2001; 79(19):3062-3064. Abstract

Kansas State University.  "Initial nucleation study and new technique for sublimation growth of AlN on  SiC substrate."  Y Shi et al  in Physica Status Solidi A, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 188(2):757-62. Abstract

Korea Advanced Institute of Science and Technology (South Korea).  "Effect of Si ; Mg ; and Mg-Zn doping on structural properties of a GaN layer grown by metalorganic chemical vapor deposition."  HK Cho et al  in Solid-State Electronics; 2001; 45(12):2023-2027.  Abstract

Korea Advanced Institute of Science and Technology (South Korea).  "Structural properties of Si and Mg doped and undoped Al0.13Ga0.87N layers grown by metalorganic chemical vapor deposition."  HK Cho et al  in Journal of Crystal Growth; 2001; 233(4):667-672. Abstract

Korea Advanced Institute of Science and Technology (South Korea).  "Structural and optical characteristics of InGaN/GaN multiple quantum wells  with different growth interruption."  HK Cho et al  in Physica Status Solidi B, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 228(1):165-8. Abstract

Korea Advanced Institute of Science and Technology (South Korea).  "Influence of Mg doping on structural defects in AlGaN layers grown by  metalorganic chemical vapor deposition."  Hyung Koun Cho et al  in Applied Physics Letters; 2001; 79(23):3788-90. Abstract

Korea University (South Korea).  "Reduction of defects in GaN on reactive ion beam treated sapphire by annealing."  D Byun et al  in Physica Status Solidi B-Basic Research; 2001; 228(1):315-318. Abstract

Kyoto University (Japan).  "Hexagonal GaN grown on GaAs{11n} substrates by metalorganic vapor-phase  epitaxy using AlAs intermediate layers."  M Funato et al  in Applied Physics Letters; 2001; 79(25):4133-5. Abstract

Lawrence Berkeley National Laboratory.  "Influence of dopants on defect formation in GaN."  Z Liliental-Weber et al  in Physica Status Solidi B, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 228(2):345-52. Abstract

Lecce University (Italy).  "Influence of the N{sub 2}/H{sub 2} ratio on the structural features of  In{sub x}Ga{sub 1-x}N/GaN films grown by MOCVD."  E Piscopiello et al  in Materials Science & Engineering B (Solid-State Materials for Advanced  Technology), Conference Proceedings:  2001 Lawrence Symposium on Critical Issues in Epitaxy, 3-6 Jan. 2001,  Scottsdale, AZ, USA; 2001; B87(3):237-43. Abstract.

Macquarie University (Australia).  "Cathodoluminescence investigations of interfaces in InGaN/GaN/sapphire structures."  M Godlewski et al  in Physica Status Solidi B-Basic Research; 2001; 228(1):179-182. Abstract

Macquarie University (Australia).  "UV moderation of nitride films during remote plasma enhanced chemical  vapour deposition."  KSA Butcher et al  in  Physica Status Solidi A, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 188(2):667-71. Abstract

Matsushita Electric Industrial Co. (Japan).  "Transport of gas-phase species stored in stagnant volumes under a GaN metalorganic vapor phase epitaxy horizontal reactor."  K Harafuji in Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers; 2001; 40(11):6263-6283. Abstract

Matsushita Electrical Industrial Company Ltd. (Japan).  "Gas-phase and surface reactions in a horizontal reactor for GaN MOVPE  growth."  K Harafuji in Physica Status Solidi A, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 188(2):635-9. Abstract

Max Planck Institute fur Metallforschung (Germany).  "Chemical solution deposition derived buffer layers for MOCVD-grown GaN  films."  M Puchinger et al  in Journal of Crystal Growth; 2001; 233(1-2):57-67.  Abstract

Nagoya Institute of Technology (Japan).  "Suppression of GaInN/GaN multi-quantum-well decomposition during growth of light-emitting-diode structure."  H Ishikawa et al  in Japanese Journal of Applied Physics Part 2-Letters; 2001; 40(11A):L1170-L1172. Abstract

Nijmegen University (Netherlands).  "Improvement of the optical and structural properties of MOCVD grown GaN on  sapphire by an in-situ SiN treatment."  PR Hageman et al  in Physica Status Solidi A, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 188(2):659-62. Abstract

No institutional affiliation given.  "Gallium nitride-a new chapter in investigation of surface electronic  structures of semiconductors."  BJ Kowalski et al  in Elektronika; 2001; 42(8-9):23-5.   [Abstract not available online.]

North Carolina State University.  "Pd growth and subsequent Schottky barrier formation on chemical vapor  cleaned p-type GaN surfaces."  PJ Hartlieb et al  in Journal of Applied Physics; 2002; 91(2):732-8. Abstract

Nottingham University (UK).  "Temperature dependence of the miscibility gap on the GaN-rich side of the  Ga-N-As system."  SV Novikov et al  in Physica Status Solidi B, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 228(1):223-5. Abstract

Nottingham University (UK).  "The growth of GaN using plasma assisted metalorganic vapour phase epitaxy."  RP Campion et al  in Physica Status Solidi A, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 188(2):663-6. Abstract

NTT Basic Research Laboratories (Japan).  "GaN growth on novel lattice-matching substrate: Tilted M-plane sapphire."  T Matsuoka et al  in Physica Status Solidi A, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 188(2):485-9. Abstract

RIKEN (Japan).  "Growth and optical properties of quaternary InAlGaN for 300 nm band  UV-emitting devices."   H Hirayamai et al  in Physica Status Solidi A, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 188(1):83-9. Abstract

Russian Academy of Sciences (Russia).  "Nucleation of III nitride semiconductors in heteroepitaxy."  SA Kukushkin et al  in Physics of the Solid State; 2001; 43(12):2229-2233. [Abstract available to AIP Online Journal service subscribers, see webpage .]

Science University of Tokyo (Japan).  "Observation of dark spots and dark lines of GaN microcrystals grown by  nitridation of gallium sulfide."  H Kanie et al  in Physica Status Solidi A, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 188(2):481-4. Abstract

South Carolina University.  "Pulsed atomic layer epitaxy of quaternary AlInGaN layers for ultraviolet  light emitters."  JP Zhang et al  in Physica Status Solidi A, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 188(1):95-9. Abstract

Stuttgart University (Germany).  "An oxygen doped nucleation layer for the growth of high optical quality GaN  on sapphire."  B Kuhn et al  in Physica Status Solidi A, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 188(2):629-33. Abstract

Tokushima University (Japan).  "(0001) oriented GaN epilayer grown on (1120) sapphire by MOCVD."  J Bai et al  in Journal of Crystal Growth; 2001; 231(1-2):41-7. Abstract

Tokushima University (Japan).  "Influence of inversion domains on formation of V-shaped pits in GaN films."  Hongdong Li et al  in Japanese Journal of Applied Physics, Part 2 (Letters); 2001; 40(11B):L1254-6. Abstract

Tokushima University (Japan).  "Influence of carrier gas on the morphology and structure of GaN layers  grown on sapphire substrate by six-wafer metal organic chemical vapor  deposition system."  HX Wang et al  in Journal of Crystal Growth; 2001; 233(4):681-6. Abstract

Tokyo Institute of Technology (Japan).  "Quantum dot formation and crystal growth using an atomic nano-mask."  Y Aoyagi et al  in Physica E; 2001; 11(2-3):89-93.  Abstract

Tokyo University (Japan).  "Uniform array of GaN quantum dots in AlGaN matrix by selective MOCVD  growth."  K Tachibana et al  in Physica Status Solidi B, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 228(1):187-90. Abstract

University of Bristol (UK).  "Raman spectroscopy of GaN ; AlGaN and AlN for process and growth monitoring/control."  M Kuball in Surface and Interface Analysis; 2001; 31(10):987-999. Abstract

University of California-Santa Barbara.  "Indium-surfactant-assisted growth of high-mobility AlN/GaN multilayer structures by metalorganic chemical vapor deposition."  S Keller et al  in Applied Physics Letters; 2001; 79(21):3449-3451. Abstract

University of Massachusetts.  "OMVPE growth of P-type GaN using solution Cp2Mg."  YD Qi et al  in Journal of Electronic Materials; 2001; 30(11):1382-1386. Abstract  (scroll to abstract)

University of Sheffield (UK).  "The influence of buffer layer growth parameters on the microstructure and  surface morphology of GaN on sapphire substrates correlated with in-situ  reflectivity."  DA Wood et al  in Physica Status Solidi A, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 188(2):641-5. Abstract

University of Tokyo (Japan).  "Self-assembled growth of GaN quantum dots using low-pressure MOCVD."  M Miyamura et al  in Physica Status Solidi B-Basic Research; 2001; 228(1):191-194. Abstract

University of Tsukuba (Japan).  "Polarity inversion during halide VPE growth of GaN on GaAs(111)B-As surface  at high temperatures."  F Hasegawa et al  in Physica Status Solidi A, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 188(1):443-6.  Abstract

University of Warsaw (Poland).  "X-ray diffraction study of composition inhomogeneities in Ga1-xInxN thin layers."  E Zielinska-Rohozinska et al  in  Crystal Research and Technology; 2001; 36(8-10):903-910.  Abstract

3.      Novel Substrates (Bulk, ELO, HVPE, etc.)

Bell Labs (New Jersey).  "Carrier density imaging of lateral epitaxially overgrown GaN using scanning confocal Raman microscopy."  MJ Matthews et al  in Applied Physics Letters; 2001; 79(19):3086-3088. Abstract

Bremen University (Germany).  "Mosaicity of GaN epitaxial layers: Simulation and experiment."  R Chierchia et al  in Physica Status Solidi B, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 228(2):403-6. Abstract

Bristol University (UK).  "Finite element analysis of epitaxial lateral overgrown GaN: Voids at the  coalescence boundary."  M Benyoucef et al  in  Applied Physics Letters; 2001; 79(25):4127-9.  Abstract

Chonbuk National University (South Korea).  "Structural properties of GaN grown by pendeo-epitaxy with in-doping."  YK Hong et al  in Physica Status Solidi B-Basic Research; 2001; 228(1):235-238. Abstract

Chonbuk National University (South Korea).  "Growth and characterization of GaN epilayers on chemically etched surface  of 3C-SiC intermediate layer grown on Si(111) substrate."  JH Kang et al  in Physica Status Solidi A, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 188(2):527-30. Abstract

CNRS (France).  "A mechanism for the multiple atomic configurations of inversion domain boundaries in GaN layers grown on Si(111)."  AM Sanchez et al  in Applied Physics Letters; 2001; 79(22):3588-3590. Abstract

CNRS (France).  "Stress control in GaN grown on silicon (111) by metalorganic vapor phase  epitaxy."  E Feltin et al  in Applied Physics Letters; 2001; 79(20):3230-2. Abstract

CNRS (France).  "Epitaxial lateral overgrowth of GaN on silicon (111)."  E Feltin et al  in Physica Status Solidi A, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 188(2):733-7. Abstract

CNRS (France).  "Molecular beam epitaxy of group-III nitrides on silicon substrates: growth,  properties and device applications."  F Semond et al  in Physica Status Solidi A, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 188(2):501-10.   Abstract

Ferdinand-Braun-Inst. fur Hochsfrequenstech. (Germany).  "Direct growth of GaN on (0001) sapphire by low pressure hydride vapour  phase epitaxy."  E Richter et al  in Physica Status Solidi A, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 188(1):439-42. Abstract

Georgia Institute of Technology.  "Heterogeneous materials integration: compliant substrates to active device and materials packaging ."  AS Brown et al  in Materials Science and Engineering B-Solid State Materials for Advanced Technology; 2001; 87(3):317-322. Abstract

Georgia Institute of Technology.  "Recent advances in III-nitride devices grown on lithium gallate."  WA Doolittle et al  in Physica Status Solidi A, Conference Proceedings:  Fourth International Conference of Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 188(2):491-5.  Abstract

Giessen University (Germany).  "Effects of substrate pretreatment and buffer layers on GaN epilayers grown  by hydride vapor phase epitaxy."  W Zhang et al  in Physica Status Solidi A, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 188(1):425-8. Abstract

Helsinki University of Technology (Finland).  "Thermal stability of isolated and complexed Ga vacancies in GaN bulk  crystals."  K Saarinen et al  in Physical Review B (Condensed Matter and Materials Physics); 2001; 64(23):233201-1-4. Abstract

High Pressure Research Center UNIPRESS (Poland).  "Distribution of strain in GaN and SiC nanocrystals under extreme pressures."  B Palosz et al  in Epdic 7: European Powder Diffraction, Pts 1 and 2; 2001; 378-3(pt.1&2)):735-740.  [Abstract not available online.]

Hong Kong Polytechnical University (PRC).  "Characterization of GaN thin films on HVPE GaN templates."  CF Zhu et al  in 2001 IEEE Hong Kong Electron Devices Meeting, 30 June 2001, Hong Kong,  China; 2001;   [Abstract not available online.]

Inst. Preparatoire aux Etudes d'Ingenieurs (Tunisia).  "Porous silicon as an intermediate buffer layer for GaN growth on (100) Si."  A Matoussi et al  in Microelectronics Journal; 2001; 32(12):995-8.  [Abstract  available for those with institutional subscriptions to Science Direct.  See journal page online.]

Israel Institute of Technology (Israel).  "Enhanced photoluminescence from GaN grown by lateral confined epitaxy."  S Zamir et al  in Journal of Applied Physics; 2002; 91(3):1191-7. Abstract

Kwangju Institute of Science and Technology (South Korea).  "Characteristics of GaN grown by metalorganic chemical vapor deposition using trimethylgallium and triethylgallium."  KM Song et al  in Journal of Crystal Growth; 2001; 233(3):439-445. Abstract

Kwangju Institute of Science and Technology (South Korea).  "Effects of step-graded Al{sub x}Ga{sub 1-x}N interlayer on properties of  GaN grown on Si(111) using ultrahigh vacuum chemical vapor deposition."  Min-Ho Kim et al  in Applied Physics Letters; 2001; 79(17):2713-15. Abstract

Kyoto University (Japan).  "Growth mechanism of hexagonal GaN on AlAs-pregrown GaAs(001) and {11n}  substrates."  M Funato et al  in Physica Status Solidi A, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 188(2):543-7. Abstract

Lawrence Berkeley National Laboratory.  "Mechanisms of dislocation reduction in GaN using an intermediate  temperature interlayer."  ED Bourret-Courchesne et al  in Journal of Electronic Materials, Conference Proceedings:  10th Biennial Workshop on Organometallic Vapor Phase Epitaxy, 11-15 March  2001, San Diego, CA, USA; 2001; 30(11):1417-20. Membership is required to view abstracts

Linkoping University (Sweden).  "Elimination of nonuniformities in thick GaN films using metalorganic chemical vapor deposited GaN templates."  E Valcheva et al  in Journal of Applied Physics; 2001; 90(12):6011-6016. Abstract

LumiLeds Lighting (CA).  "Evidence for voltage drops at misaligned wafer-bonded interfaces of AlGaInP light-emitting diodes by electrostatic force microscopy."  JJ O'Shea et al  in Journal of Applied Physics; 2001; 90(9):4791-4795. Abstract

Meijo University (Japan).  "Growth mechanism and characterization of low-dislocation-density AlGaN  single crystals grown on periodically grooved substrates."  T Detchprohm et al  in Physica Status Solidi A, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 188(2):799-802. Abstract

Mie University (Japan).  "Fabrication and optical characterization of facet-controlled ELO (FACELO)  GaN by LP-MOVPE."  H Miyake et al  in Physica Status Solidi A, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 188(2):725-8. Abstract

Nagoya University (Japan).  "Growth of GaN free from cracks on a (111)Si substrate by selective  metalorganic vapor-phase epitaxy."  Y Honda et al  in Applied Physics Letters; 2002; 80(2):222-4. Abstract

National Research Council of Canada (Canada).  "Laser polishing of GaN."  JJ Dubowski et al   in Proceedings of the SPIE - The International Society for Optical Engineering, Conference Proceedings:  Laser Applications in Microelectronic and Optoelectronic Manufacturing VI,  22-24 Jan. 2001, San Jose, CA, USA; 2001; 4274(442-7). Abstract

National Research Council of Canada (Canada).  "Selective growth of GaN on a SiC substrate patterned with an AlN seed layer  by ammonia molecular-beam epitaxy."  H Tang et al  in Applied Physics Letters; 2001; 79(17):2764-6.  Abstract

Nijmegen University (Netherlands).  "High quality GaN layers on Si(111) substrates: AlN buffer layer  optimisation and insertion of a SiN intermediate layer."  PR Hageman et al  in Physica Status Solidi A, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 188(2):523-6. Abstract

Nitronex Corporation (NC).  "Silicon substrates provide a disruptive technology for GaN."  W Weeks et al  in Compound Semiconductor; 2001; 7(10):63-6. Article on-line

North Carolina State University.  "Review of pendeo-epitaxial growth and characterization of thin films of GaN and AlGaN alloys on 6H-SiC(0001) and Si(111) substrates."  RF Davis et al  in MRS Internet Journal of Nitride Semiconductor Research; 2001; 6(14):1-16. Article on-line

North Carolina State University.  "Strain and dislocation reduction in maskless pendeo-epitaxy GaN thin  films."  AM Roskowski et al  in Physica Status Solidi A, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 188(2):729-32.  Abstract

Otto-von-Guericke University (Germany).  "Optical micro-characterization of complex GaN structures."  J Christen et al  in Physica Status Solidi B, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 228(2):419-24. Abstract

Otto-von-Guericke University (Germany).  "Crack-free InGaN/GaN light emitters on Si(111)."  A Dadgar et al  in Physica Status Solidi A, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 188(1):155-8. Abstract

Otton von Guericke University (Germany).  "Three-dimensional imaging of ELOG growth domains by scanning  cathodoluminescence tomography."  T Riemann et al  in Physica Status Solidi A, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 188(2):751-5.  Abstract

Pohang University of Science and Technology (South Korea).  "Nitridation mechanism of sapphire and its influence on the growth and properties of GaN overlayers."  K Ki-Sung et al  in Journal of Crystal Growth; 2001; 233(1-2):167-76. Abstract

Polish Academy of Sciences (Poland).  "Growth and doping of GaN and AlN single crystals under high nitrogen pressure."  M Bockowski in Crystal Research and Technology; 2001; 36(8-10):771-787. Abstract

Polish Academy of Sciences (Poland).  "High-nitrogen-pressure growth of GaN single crystals: doping and physical properties."  S Krukowski et al  in  Journal of Physics-Condensed Matter; 2001; 13(40):8881-8890. Abstract

Polish Academy of Sciences (Poland).  "X-ray diffraction study on ELOG (epitaxial lateral overgrowth) GaN layers."  J Domagala et al  in 3rd International Conference `Novel Applications of Wide Bandgap Layers',  26-30 June 2001, Zakopane, Poland; 2001; [Abstract not available online.]

Strathclyde University (UK).  "In situ and ex situ evaluation of mechanisms of lateral epitaxial  overgrowth."   IM Watson et al  in Physica Status Solidi A, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 188(2):743-6.  Abstract

TDI Inc. (MD).  "Characterization of 2.5-inch diameter bulk GaN grown from melt-solution."  V Soukhoveev et al  in Physica Status Solidi A, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 188(1):411-14. Abstract

Technology and Devices International Inc.   "Growth of submicron AlGaN/GaN/AlGaN heterostructures by hydride vapor phase  epitaxy (HVPE)."  D Tsvetkov et al  in Physica Status Solidi A, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 188(1):429-32. Abstract

Tohoku University (Japan).  "Yield strength and dislocation mobility in plastically deformed bulk  single-crystal GaN."  I Yonenaga et al  in Journal of Applied Physics; 2001; 90(12):6539-41. Abstract

UNIPRESS (Poland).  "Optoelectronic devices based on (AlGaIn)N structures on GaN crystals."  M Leszczynski in 3rd International Conference `Novel Applications of Wide Bandgap Layers',  26-30 June 2001, Zakopane, Poland; 2001; [Abstract not available online.]

University of California-Los Angeles.  "Thermal control of metathesis reactions producing GaN and InN."  RW Cumberland et al  in Journal of Physical Chemistry B; 2001; 105(47):11922-11927.  [Abstract available to ACS publications subscribers, see online Table of Contents.]

University of California - Santa Barbara.  "Observation of crystallographic wing tilt in cantilever epitaxy of GaN on  silicon carbide and silicon (111) substrates."  TM Katona et al  in Applied Physics Letters; 2001; 79(18):2907-9.  Abstract

University of Tokyo (Japan).  "RHEED and XPS study of GaN on Si(111) grown by pulsed laser deposition."  J Ohta et al  in Journal of Crystal Growth; 2001; 233(4):779-784. Abstract

University of Utah.  "Enhancement of compositional modulation in GaInP epilayers by the addition of surfactants during organometallic vapor phase epitaxy growth."  RT Lee et al  in Journal of Crystal Growth; 2001; 233(3):490-502. Abstract

University of Wisconsin.  "Effect of Sb as a surfactant during the lateral epitaxial overgrowth of GaN  by metalorganic vapor phase epitaxy."  L Zhang et al  in Applied Physics Letters; 2001; 79(19):3059-61.  Abstract

Warsaw University of Technology (Poland).  "Growth of bulk Ga{sub 1-x}Mn{sub x}N single crystals."  T Szyszko et al  in Journal of Crystal Growth; 2001; 233(4):631-8. Abstract

Warsaw University of Technology (Poland).  "MOVPE GaN grown on alternative substrates."  R Paszkiewicz et al  in Crystal Research and Technology; 2001; 36(8-10):971-7. Abstract

Warsaw University of Technology (Poland).  "Structure characterization of (Al,Ga)N epitaxial layers by means of X-ray  diffractometry."  J Kozlowski et al  in Physica Status Solidi B, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 228(2):415-18. Abstract

Xerox Corporation.  "CW InGaN multiple-quantum-well laser diodes on copper substrates."  M Kneissl et al  in Physica Status Solidi A, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 188(1):23-9. Abstract

4.      Processing

Boston University.  "Novel polarization enhanced ohmic contacts to n-type GaN."  Yun-Li Li et al  in Physica Status Solidi A, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 188(1):359-62. Abstract

Cambridge University (UK).  "Identification of interfacial layers in Ohmic contacts to n-type GaN and AlxGa1-xN/GaN heterostructures using high-resolution electron microscopy."  AN Bright et al  in Philosophical Magazine B-Physics of Condensed Matter Statistical Mechanics Electronic Optical and Magnetic Properties; 2001; 81(11):1725-1744.  [Abstract available to subscribers, see online item.]

Chonbuk National University (South Korea).  "Photoenhanced electrochemical etching of n-GaN forced by negative bias."  Jae Won Seo et al  in Japanese Journal of Applied Physics, Part 2 (Letters); 2001; 40(10B):L1086-8. Abstract

Chonbuk National University (South Korea).  "Allowable substrate bias for the etching of n-GaN in photo-enhanced  electrochemical etching."  JW Seo et al  in Physica Status Solidi A, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 188(1):403-6. Abstract

Chonbuk National University (South Korea).  "Characteristics of InGaN/GaN light-emitting diode with Si delta -doped GaN  contact layer."  SR Jeon et al  in Physica Status Solidi A, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 188(1):163-6. Abstract

Institute of Materials Research and Engineering Singapore).  "Outgoing multiphonon resonant Raman scattering in Be- and C-implanted GaN."  WH Sun et al  in Physica Status Solidi B-Basic Research; 2001; 228(1):341-344. Abstract

Kwangju Institute of Science and Technology (South Korea).  "Effects of N{sub 2}O plasma surface treatment on the electrical and ohmic contact properties of n-type GaN."  K Hyunsoo et al  in Electrochemical and Solid-State Letters; 2001; 4(11):G104-6.  Abstract

Kwangju Institute of Science and Technology (South Korea).  "Activation of Mg acceptor in GaN:Mg with pulsed KrF (248 nm) excimer laser  irradiation."  Dong-Joon Kim et al   in Physica Status Solidi B, Conference Proceedings:  Fourth International Conference on Nitride emiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 228(2):375-8. Abstract

National Central University (Taiwan).  "Investigation of oxidation mechanism for ohmic formation in Ni/Au contacts to p-type GaN layers."  CS Lee et al  in Applied Physics Letters; 2001; 79(23):3815-3817. Abstract

National Central University (Taiwan).  "Investigation of the thermal degradation mechanism for Cu/Au Schottky  contacts to the InGaP layer."  Day-Shan Liu et al  in Journal of Applied Physics; 2002; 91(3):1349-53. Abstract

National Chiao Tung University (Taiwan).  "Thermal stability study of Ni/Ta n-GaN Schottky contacts."  GL Chen et al  in Applied Physics Letters; 2002; 80(4):595-7. Abstract

National Chung-Hsing University (Taiwan).  "Low-resistance and high-transparency Ni/indium tin oxide ohmic contacts to  p-type GaN."  Ray-Hua Horng et al  in Applied Physics Letters; 2001; 79(18):2925-7. Abstract

National Taiwan University (Taiwan).  "Activation of p-type GaN with irradiation of the second harmonics of a  Q-switched Nd:YAG laser."  Yung-Chen Cheng et al  in Physica Status Solidi B, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 228(2):357-60. Abstract

National University of Singapore (Singapore).  "Vacancy effects on plasma-induced damage to n-type GaN : art. no. 205302."  SJ Chua et al  in Physical Review B; 2001; 6420(20):5302-+. Abstract

National University of Singapore (Singapore).  "The link between gallium vacancies and plasma damage to n-type GaN."  HW Choi et al  in Physica Status Solidi A, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 188(1):393-7. Abstract

Osaka University  (Japan).  "Codoping method for the fabrication of low-resistivity wide band-gap semiconductors in p-type GaN ; p-type AlN and n-type diamond: prediction versus experiment."  H Katayama-Yoshida et al  in Journal of Physics-Condensed Matter; 2001; 13(40):8901-8914. Abstract

Polish Academy of Sciences (Poland).  "Microstructure of GaN heteroepitaxial layers after diffusion of Mg ; Zn and Au under high pressure."  D Kolesnikov et al  in Diffusions in Materials: Dimat2000, Pts 1 & 2; 2001; 194-1(737-743.  [Abstract not available online.]

RIKEN (Japan).  "GaN etching by simultaneous irradiation of KrF excimer laser and F{sub 2}  laser."  T Akane et al  in Proceedings of the SPIE - The International Society for Optical Engineering, Conference Proceedings:  Laser Applications in Microelectronic and Optoelectronic Manufacturing VI,  22-24 Jan. 2001, San Jose, CA, USA; 2001; 4274(133-40). Abstract

Ritsumeikan University (Japan).  "Effects of annealing on the interface properties between Ni and p-GaN."  T Maruyama et al  in Physica Status Solidi A, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 188(1):375-8. Abstract

Samsung Advanced Institute of Technology (South Korea).  "The role of an overlayer in the formation of Ni-based transparent ohmic contacts to p-GaN."  JS Kwak et al  in Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers; 2001; 40(11):6221-6225. Abstract

Samsung Advanced Institute of Technology (South Korea).  "Crystal-polarity dependence of Ti/Al contacts to freestanding n-GaN  substrate."  Joon Seop Kwak et al  in Applied Physics Letters; 2001; 79(20):3254-6.  Abstract

Sincrotrone Trieste (Italy).  "Direct experimental evidence of insensitivity of local Schottky barriers to lateral chemical inhomogeneity in case studies of metal/GaN(0001) interfaces : art. no. 201312."  A Barinov et al  in Physical Review B; 2001; 6420(20):1312-+. Abstract

Sincrotrone Trieste (Italy).  "Defect-induced lateral chemical heterogeneity at Ni/GaN interfaces and its effect on the electronic properties of the interface."  A Barinov et al  in Applied Physics Letters; 2001; 79(17):2752-4.  Abstract

Sony Shiroishi Semiconductor Inc. (Japan).  "Novel methods of p-type activation in Mg-doped GaN."  M Takeya et al  in Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers; 2001; 40(11):6260-6262. Abstract

Strathclyde University (UK).  "InGaN/GaN quantum well microcavities formed by laser lift-off and plasma  etching."  PR Edwards et al  in Physica Status Solidi B, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 228(1):91-4. Abstract

Technion-Israel Institute of Technology (Israel).  "Vertical versus lateral GaN Schottky ultraviolet detectors and their gain  mechanism."  O Katz et al  in Physica Status Solidi A, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 188(1):345-9. Abstract

Texas Tech University.  "Plasma enhanced metalorganic chemical vapor deposition of amorphous  aluminum nitride."  H Harris et al  in Journal of Applied Physics; 2001; 90(11):5825-31. Abstract

University of Bonn (Germany).  "Annealing behaviour of GaN after implantation with hafnium and indium."  K Lorenz et al  in Physica Status Solidi B-Basic Research; 2001; 228(1):331-335. Abstract

University of California - Santa Barbara.  "Mass transport regrowth of GaN for ohmic contacts to AlGaN/GaN."  S Heikman et al  in Physica Status Solidi A, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 188(1):355-8. Abstract

University of Florida.  "Characterization of high dose Fe implantation into p-GaN."  N Theodoropoulou et al  in Applied Physics Letters; 2001; 79(21):3452-3454.  Abstract

University of Florida.  "Effect of PECVD of SiO2 passivation layers on GaN and InGaP."  KH Baik et al  in Solid-State Electronics; 2001; 45(12):2093-2096.  Abstract

University of Florida.  "Role of annealing conditions and surface treatment on ohmic contacts to p-GaN and p-Al0.1Ga0.9N/GaN superlattices."  AP Zhang et al  in Applied Physics Letters; 2001; 79(22):3636-3638. Abstract

University of New Mexico.  "Observation of nitrogen vacancy in proton-irradiated AlxGa1-xN."  QY Zhou et al  in Applied Physics Letters; 2001; 79(18):2901-2903. Abstract

University of Nijmegen (Netherlands) / Polish Academy of Sciences (Poland) / Delft University of Technology (Netherlands).  "Selective photoetching and transmission electron microscopy studies of defects in heteroepitaxial GaN."  JL Weyher et al  in Journal of Applied Physics; 2001; 90(12):6105-6109. Abstract

University of Shizuoka (Japan).  "Selective etching of GaN polar surface in potassium hydroxide solution studied by x-ray photoelectron spectroscopy."  DS Li et al  in Journal of Applied Physics; 2001; 90(8):4219-4223. Abstract

University of Strathclyde (UK).  "Optical spectroscopy of GaN microcavities with thicknesses controlled using  a plasma etchback."  RW Martin et al  in  Applied Physics Letters; 2001; 79(19):3029-31. Abstract

University of Tokyo (Japan).  "Mechanism for low temperature activation of Mg-doped GaN with Ni catalysts."  I Waki et al  in Journal of Applied Physics; 2001; 90(12):6500-6504. Abstract

Warsaw University of Technology (Poland).  "Physical-chemical etching of GaN layers on sapphire."  J Szmidt et al  in 3rd International Conference `Novel Applications of Wide Bandgap Layers',  26-30 June 2001, Zakopane, Poland; 2001; [Abstract not available online.]

Xerox Corporation.  "Passivation and doping due to hydrogen in III-nitrides."  S Limpijumnong et al  in Physica Status Solidi B-Basic Research; 2001; 228(1):303-307. Abstract

Xerox Corporation.  "Influence of microstructure on the carrier concentration of Mg-doped GaN  films."  LT Romano et al  in Applied Physics Letters; 2001; 79(17):2734-6. Abstract

B.    Materials and Device Design and Properties

1.     Epimaterials (Bulk)

Academy of Sciences (Belarus).  "Time- and temperature-resolved photoluminescence of GaN:Mg epitaxial layers  grown by MOVPE."  AL Gurskii et al  in Physica Status Solidi B, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA ; 2001; 228(2):361-4. Abstract

Arizona State University.  "Spatially resolved cathodoluminescence study of As doped GaN."  A Bell et al  in Physica Status Solidi B-Basic Research; 2001; 228(1):207-211. Abstract

Arizona State University.  "Low Stokes shift in thick and homogeneous InGaN epilayers."  S Srinivasan et al  in Applied Physics Letters; 2002; 80(4):550-2.   Abstract

Bahia Federal University (Brazil).  "Influence of Si doping on optical properties of wurtzite GaN."  AF da Silva et al  in Journal of Physics-Condensed Matter; 2001; 13(40):8891-8899. Abstract

Cambridge University (UK).  "Computational study of the effect of Al and In on the formation energies and acceptor levels of Mg and C dopants in GaN."  JA Chisholm et al   in Journal of Physics-Condensed Matter; 2001; 13(40):8875-8880. Abstract

Cambridge University (UK).  "Formation energies of metal impurities in GaN."  JA Chisholm et al  in Computational Materials Science; 2001; 22(1-2):73-7. Abstract

Chonbuk National University (South Korea).  "Effect of isoelectronic in doping on deep levels in GaN grown by MOCVD."  HK Cho et al  in Physica Status Solidi B-Basic Research; 2001; 228(1):231-234. Abstract

Chung-Buk National University (South Korea).  "Temperature dependence of transmission and emission spectra in MOCVD-grown  AlGaN ternary alloys."  Yong-Hoon Cho et al  in Physica Status Solidi A, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 188(2):815-19. Abstract

Fukui University (Japan).  "Near K-edge absorption spectra of III-V nitrides."  K Fukui et al  in Physica Status Solidi B, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 228(2):461-5. Abstract

Harvard University.  "Hall photovoltage deep-level spectroscopy of GaN films : art. no. 205313."  I Shalish et al  in Physical Review B; 2001; 6420(20):5313-+. Abstract

Hong Kong University (PRC).  "GaN thin films on SiC substrates studied using variable energy positron  annihilation spectroscopy."  YF Hu et al  in Materials Science Forum, Conference Proceedings:  Positron Annihilation. ICPA-12. 12th International Conference on Positron  Annihilation, 6-1 Aug. 2000, Munchen, Germany; 2001; 363-365(478-80). [ To get to the abstract and a paper preview, go to http://www.scientific.net and search on the title. ]

Humboldt University (Germany).  "Extended x-ray absorption fine structure and photoluminescence study of Er-implanted GaN films."  D Wruck et al  in Semiconductor Science and Technology; 2001; 16(11):L77-L80. Abstract

Institute of Materials Research and Engineering (Singapore).  "Raman scattering and photoluminescence of Mg-implanted GaN films."  Lianshan Wang et al  in Physica Status Solidi B, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 228(2):449-52. Abstract

Institute of Physical and Chemical Research (Japan).  "Marked enhancement of 320-360 nm ultraviolet emission in quaternary In{sub  x}Al{sub y}Ga{sub 1-x-y}N with In-segregation effect."  H Hirayama et al  in Applied Physics Letters; 2002; 80(2):207-9. Abstract

International Center for Theoretical Physics (Italy).  "Pressure effect on phonon modes in gallium nitride: a molecular dynamics study."  MR Aouas et al  in Solid State Communications; 2001; 120(9-10):413-418.  Abstract

Leipzig University (Germany).  "Infrared ellipsometry-a novel tool for characterization of group-III  nitride heterostructures for optoelectronic device applications."  M Schubert et al  in Physica Status Solidi B, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 228(2):437-40. Abstract

Leipzig University (Germany).  "Phonon modes of GaN{sub y}P{sub 1-y} (0.006<or=y<or=0.0285) measured by  midinfrared spectroscopic ellipsometry."  G Leibiger et al  in Applied Physics Letters; 2001; 79(21):3407-9. Abstract

Linkoping University (Sweden).  "Optical characterization of InGaN/GaN MQW structures without in phase separation."  B Monemar et al  in Physica Status Solidi B-Basic Research; 2001; 228(1):157-160. Abstract

Linkoping University (Sweden).  "Radiative and nonradiative exciton lifetimes in GaN grown by molecular beam  epitaxy."  G Pozina et al  in Physica Status Solidi B, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 228(2):485-8. Abstract

National Chiao Tung University (Taiwan).  "Long-term photocapacitance decay behavior in undoped GaN."  HM Chung et al  in Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers; 2001; 40(10):5871-5874. Abstract

National Taiwan University (Taiwan).  "Generation of coherent acoustic phonons in strained GaN thin films."  Yue-Kai Huang et al  in Applied Physics Letters; 2001; 79(20):3361-3. Abstract

Nebraska University.  "Phonon modes and critical points of GaPN."  G Leibiger et al  in Physica Status Solidi B, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 228(1):279-82. Abstract

North Carolina State University.  "Group-III nitrides hot electron effects in moderate electric fields."  EA Barry et al  in Physica Status Solidi B, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 228(2):571-4. Abstract

Nottingham University (UK).  "On the origin of blue emission from As-doped GaN."  I Harrison et al  in Physica Status Solidi B, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 228(1):213-17.  Abstract

Nottingham University (UK).  "The transition from blue emission in As-doped GaN to GaNAs alloys in layers  grown by molecular beam epitaxy."  CT Foxon et al  in Physica Status Solidi B, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 228(1):203-6. Abstract

Ohio State University.  "Carrier trapping and recombination at point defects and dislocations in  MOCVD n-GaN."  A Hierro et al  in Physica Status Solidi B; 2001; 228(3):937-46. Abstract

Otton von Guericke University (Germany).  "Electrical characterization of magnesium implanted gallium nitride."  A Krtschil et al  in Journal of Applied Physics; 2002; 91(1):178-82. Abstract

Pohang University of Science and Technology (South Korea).  "Compensation model for n-type GaN."  GC Yi et al  in Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers; 2001; 40(11):6243-6247. Abstract

Saitama University (Japan).  "Extremely slow relaxation process of a yellow-luminescence-related state in  GaN revealed by two-wavelength excited photoluminescence."  JM Zanardi Ocampo et al  in Physica Status Solidi B, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 228(2):433-6. Abstract

Shandong University (PRC).  "The UV photoconductivity of n-type GaN films deposited by MOCVD."  Zhang De-Heng et al  in Acta Physica Sinica; 2001; 50(9):1800-4. [See Chinese-language website, available? only in Chinese:  http://wulixb.iphy.ac.cn/wulixb/]

Sony Corporation (Japan).  "Local structure analysis of Ga1-xInxN alloy using extended X-ray absorption fine structure measurements."  T Miyajima et al  in Physica Status Solidi B-Basic Research; 2001; 228(1):45-48. Abstract

Sony Corporation (Japan).  "Threading dislocations and optical properties of GaN and GaInN."  T Miyajima et al  in Physica Status Solidi B, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 228(2):395-402. Abstract

Technical University of Berlin (Germany).  "Optical properties of wurtzite AlxGa1-xN (x < 0.1) parallel and perpendicular to the c axis : art. no. 165203."  C Cobet et al  in Physical Review B; 2001; 6416(16):5203-+. Abstract

Technical University of Berlin (Germany).  "Resonant Raman scattering on free and bound excitons in GaN : art. no. 165314."  A Kaschner et al  in Physical Review B; 2001; 6416(16):5314-+. Abstract

Technical University of Chemnitz (Germany).  "Dispersion-related assessments of temperature dependences for the  fundamental band gap of hexagonal GaN."  R Passler in Journal of Applied Physics; 2001; 90(8):3956-64. Abstract

Tokai University (Japan).  "Anisotropic superconductivity of InN grown by molecular beam epitaxy on sapphire (0001)."  T Inushima et al  in Physica Status Solidi B-Basic Research; 2001; 228(1):9-12. Abstract

Trinity College (Ireland).  "Exciton diffusion in GaN epitaxial layers."  Y Rakovich et al  in Physica Status Solidi B, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 228(2):493-6. Abstract

University Gesamthsch Paderborn (Germany).  "Carbon : an alternative acceptor for cubic GaN."  DJ As et al  in Journal of Physics-Condensed Matter; 2001; 13(40):8923-8929. Abstract

University of Bristol (UK).  "Electron holography studies of the charge on dislocations in GaN : art. no. 205504."  D Cherns et al  in Physical Review Letters; 2001; 8720(20):5504-+.  Abstract

University of Leipzig (Germany).  "Phonon modes of GaNyP1-y (0.006 <= y <= 0.0285) measured by midinfrared spectroscopic ellipsometry ."  G Leibiger et al  in Applied Physics Letters; 2001; 79(21):3407-3409. Abstract

University of Montpellier (France).  "Strain-fields effects and reversal of the nature of the fundamental valence band of ZnO epilayers."  B Gil et al  in Japanese Journal of Applied Physics Part 2-Letters; 2001; 40(10B):L1089-L1092. Abstract

University of Science and Technology of China (PRC).  "Residual donors and compensation in metalorganic chemical vapor deposition  as-grown n-GaN."  Xiaoliang Xu et al  in Journal of Applied Physics; 2001; 90(12):6130-4. Abstract

University of Surrey (UK).  "Temperature-dependent hole transport in GaN."  D Lancefield et al  in Journal of Physics-Condensed Matter; 2001; 13(40):8939-8944. Abstract

University of Tsukuba (Japan).  "Band gap bowing and exciton localization in strained cubic InxGa1-xN films grown on 3C-SiC (001) by rf molecular-beam epitaxy."  SF Chichibu et al  in Applied Physics Letters; 2001; 79(22):3600-3602. Abstract

University of Tsukuba (Japan).  "Comparative study on the optical properties of Eu : GaN with Tb : GaN."  H Bang et al  in Physica Status Solidi B-Basic Research; 2001; 228(1):319-323. Abstract

Uppsala University (Sweden).  "Effective electron and hole masses in intrinsic and heavily n-type doped GaN and AlN."  C Persson et al  in Journal of Physics-Condensed Matter; 2001; 13(40):8915-8922. Abstract

US Air Force Office of Scientific Research.  "GaN deep level capture barriers."  D Johnstone et al  in Proceedings of the SPIE - The International Society for Optical Engineering, Conference Proceedings:  Photodetectors: Materials and Devices VI, 22-24 Jan. 2001, San Jose, CA,  USA; 2001; 4288(209-18). Abstract

US Naval Research Laboratory.  "Detection and identification of donors in hydride-vapor-phase epitaxial GaN  layers."  JAJr Freitas et al  in Physica Status Solidi A, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 188(1):457-61. Abstract

Valencia University (Spain).  "Photoluminescence study of excitons in homoepitaxial GaN."  G Martinez-Criado et al  in Journal of Applied Physics; 2001; 90(11):5627-31. Abstract

Virginia Commonwealth University.  "Photoluminescence of GaN grown by molecular-beam epitaxy on a freestanding GaN template."  MA Reshchikov et al  in Applied Physics Letters; 2001; 79(23):3779-3781. Abstract

Warsaw University of Technology(Poland).  "Contactless characterisation techniques for verification of (AlGaN/GaN)  device heterostuctures quality."  R Paszkiewicz et al   in 3rd International Conference `Novel Applications of Wide Bandgap Layers',  26-30 June 2001, Zakopane, Poland; 2001.  [Abstract not available online.]

Wright State University.  "Defect-related donors, acceptors, and traps in GaN."  DC Look  in Physica Status Solidi B, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 228(1):293-302. Abstract

Xerox Corporation.  "Entropy-driven stabilization of a novel configuration for acceptor-hydrogen complexes in GaN : art. no. 205505."  S Limpijumnong et al  in Physical Review Letters; 2001; 8720(20):5505-+. Abstract

2.     Epimaterials (0D, 1D and 2D)

Chinese Academy of Sciences (PRC).  "Effects of piezoelectricity and spontaneous polarization on electronic and  optical properties of wurtzite III-V nitride quantum wells."  S Wan et al  in Journal of Applied Physics; 2001; 90(12):6210-16. Abstract

Chonbuk National University (South Korea).  "Spatial variation of photoluminescence and related defects in InGaN/GaN quantum wells."  MS Jeong et al  in Applied Physics Letters; 2001; 79(21):3440-3442. Abstract

Chonbuk National University (South Korea).  "Multi-emission from InGaN/GaN multi-quantum wells grown on hexagonal GaN  microstructures."  Chi Sun Kim et al  in Physica Status Solidi B, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 228(1):183-6. Abstract

CNRS (France).  "Donor and donor bound exciton spectroscopy in wurtzite GaN  heterostructures."  M Teisseire et al  in Physica Status Solidi B, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 228(2):501-4. Abstract

CNRS (France).  "Acoustical and optical gallium nitride waveguides grown on Si(111) by  metalorganic vapor phase epitaxy."  HPD Schenk et al  in Physica Status Solidi A, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA ; 2001; 188(2):537-41. Abstract

CNRS (France).  "Study of (Al,Ga)N Bragg mirrors grown on Al{sub 2}O{sub 3}(0001) and  Si(111) by metalorganic vapor phase epitaxy."  HPD Schenk et al  in Physica Status Solidi A, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 188(2):899-903. Abstract

Colorado State University.  "Pressure dependence of piezoelectric field in InGaN/GaN quantum wells."  G Vaschenko et al  in Physica Status Solidi B,Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 228(1):73-6. Abstract

Ecole Supérieure de Physique-Chimie Industrielles (Paris).  "Exact symmetries of electron states and optical selection rules in wurtzite-based nanostructures : art. no. 205312."  YE Kitaev et al  in Physical Review B; 2001; 6420(20):5312-+. Abstract

Federal University of Ceara (Brazil).  quot;Strong interface localization of phonons in nonabrupt InN/GaN superlattices : art. no. 201306 ."  EF Bezerra et al  in Physical Review B; 2001; 6420(20):1306-+. Abstract

Friedrich-Alexander University (Germany).  "Electroabsorption spectroscopy-direct determination of the strong  piezoelectric field in InGaN/GaN heterostructure diodes."  P Kiesel et al  in Physica Status Solidi A, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 188(1):131-4. Abstract

Furukawa Electrical Company Ltd. (Japan).  "Electroluminescence studies of nitride-rich GaN{sub 1-x}P{sub x} SQW  structure grown by laser-assisted metal-organic chemical vapor deposition."  J Kikawa et al  in Physica Status Solidi A, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 188(1):159-62. Abstract

Humboldt University (Germany).  "Comparative study of the spontaneous and stimulated emission of M-plane and  C-plane GaN/AlGaN quantum wells."  B Rau et al  in Proceedings of the SPIE - The International Society for Optical Engineering, Conference Proceedings:  Physics and Simulation of Optoelectronic Devices IX, 22-26 Jan. 2001, San  Jose, CA, USA; 2001; 4283(96-103). Abstract

Institute of Electron Technology (Poland).  "Dual contribution to the Stokes shift in InGaN-GaN quantum wells."  TJ Ochalski et al  in Physica Status Solidi B, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 228(1):111-14. Abstract

Institute of Physical and Chemical Research (Japan).  "Efficient 230-280 nm emission from high-Al-content AlGaN-based multiquantum  wells."  H Hirayama et al  in Applied Physics Letters; 2002; 80(1):37-9. Abstract

Kanagawa University (Japan).  "Electrical properties of strained AlN/GaN superlattices on GaN grown by  metalorganic vapor phase epitaxy."  S Yamaguchi et al  in Applied Physics Letters; 2002; 80(5):802-4. Abstract

Korea Advanced Institute of Science and Technology (South Korea).  "Microstructural characterization of InGaN/GaN multiple quantum wells with  high indium composition."  Wyung Koun Cho et al  in Journal of Crystal Growth; 2001; 231(4):466-73. Abstract

Korea Institute of Technology (South Korea).  "Influence of strain-induced indium clustering on characteristics of  InGaN/GaN multiple quantum wells with high indium composition."  HK Cho et al  in Journal of Applied Physics; 2002; 91(3):1104-7. Abstract

Kyoto University (Japan).  "Carrier dynamics in InGaN/GaN SQW structure probed by the transient grating method with subpicosecond pulsed laser."  K Okamoto et al  in Physica Status Solidi B-Basic Research; 2001; 228(1):81-84. Abstract

Lawrence Berkeley National Laboratory.  "Relation between structural parameters and the effective electron-hole separation in InGaN/GaN quantum wells."  NA Shapiro et al  in Physica Status Solidi B-Basic Research; 2001; 228(1):147-151. Abstract

Lomonosov State University (Russia).  "Energy diagram and recombination mechanisms in InGaN/AlGaN/GaN  heterostructures with quantum wells."  AE Yunovich et al  in Physica Status Solidi B, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 228(1):141-5. Abstract

Lucent Technology Bell Labs (NJ).  "Growth and characterization of GaN/AlGaN superlattices for near-infrared  intersubband transitions."  HM Ng et al  in Physica Status Solidi A, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 188(2):825-31. Abstract

National Center University (Taiwan).  "Effects of In and Ga interdiffusion on the optical gain of InGaN/GaN quantum well."  CC Chen et al  in Journal of Applied Physics; 2001; 90(10):5180-5182. Abstract

National Central University (Taiwan).  "Piezoelectric field-induced quantum-confined Stark effect in InGaN/GaN  multiple quantum wells."  CY Lai et al  in Physica Status Solidi B, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 228(1):77-80. Abstract

National Central University (Taiwan).  "Direct measurement of piezoelectric field in In{sub 0.23}Ga{sub 0.77}N/GaN  multiple quantum wells by electrotransmission spectroscopy."  CY Lai et al  in Journal of Applied Physics; 2002; 91(1):531-3. Abstract

National Chunghsing University (Taiwan).  "Optical characterization of wurtzite gallium nitride nanowires."  MW Lee et al  in Applied Physics Letters; 2001; 79(22):3693-3695. Abstract

National Institute of Advanced Industrial Science and Technology (Japan).  "Electrical characterization at cubic AlN/GaN heterointerface grown by  radio-frequency plasma-assisted molecular beam epitaxy."  T Kitamura et al  in Physica Status Solidi B, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA ; 2001; 228(2):599-602. Abstract

National Nano Device Laboratories (Taiwan).  >"Electron energy state dependence on the shape and size of semiconductor  quantum dots."  Yiming Li et al  in Journal of Applied Physics; 2001; 90(12):6416-20. Abstract

National Taiwan University (Taiwan).  "Mechanism of photoluminescence in GaN/Al0.2Ga0.8N superlattices."  CH Chen et al  in Applied Physics Letters; 2001; 79(23):3806-3808. Abstract

National Taiwan University (Taiwan).  "Two-component photoluminescence decay in InGaN/GaN multiple quantum well  structures."  Shih-Wei Feng et al  in Physica Status Solidi B, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 228(1):121-4. Abstract

Nijmegen University (Netherlands).  "Photoluminescence study of piezoelectric polarization in strained Al{sub  x}Ga{sub 1-x}N/GaN single quantum wells."  V Kirilyuk et al  in Physica Status Solidi B, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 228(2):563-6. Abstract

North Carolina State University.  "Strain-induced piezoelectric field effects on light emission energy and intensity from AlInGaN/InGaN quantum wells."  ME Aumer et al  in Applied Physics Letters; 2001; 79(23):3803-3805. Abstract

Oklahoma State University.  "Effect of well thickness on GaN/AlGaN separate confinement heterostructure  emission."  G Gainer et al  in Physica Status Solidi A, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 188(2):857-61. Abstract

Oklahoma State University.  "Time-resolved photoluminescence of In{sub x}Ga{sub 1-x}N/GaN multiple  quantum well structures: Effect of Si doping in the barriers."  CK Choi et al  in Physical Review B (Condensed Matter and Materials Physics); 2001; 64(24):245339-1-7. Abstract

Osaka University (Japan).  "Optical studies on AlGaN/InGaN/GaN single quantum-well structures under external strains."  E Kurimoto et al  in Physica Status Solidi B-Basic Research; 2001; 228(1):103-106. Abstract

Oxford University (UK).  "Analysis of gain saturation in In{sub 0.02}Ga{sub 0.98}N/In{sub 0.16}Ga{sub  0.84}N multiple quantum wells."  K Kyhm et al  in Applied Physics Letters; 2001; 79(21):3434-6. Abstract

Pioneer Corporation (Japan).  "Optical gain and optical internal loss of GaN-based laser diodes measured by variable stripe length method with laser processing."  Y Kimura et al  in Japanese Journal of Applied Physics Part 2-Letters; 2001; 40(10B):L1103-L1106. Abstract

Russian Academy of Sciences (Russia).  "Electric-field-induced impact ionization of excitons in GaN and GaN/AlGaN quantum wells."  DK Nelson et al  in Physics of the Solid State; 2001; 43(12):2321-2327. [Abstract available to AIP Online Journal service subscribers, see webpage .]

Russian Academy of Sciences (Russia).  "Structural and photonic properties of Opal-GaN nanocomposites."  VG Golubev et al  in Semiconductors; 2001; 35(11):1320-1323. Abstract

South Carolina University.  "Polarization effects and UV emission in highly excited quaternary AlInGaN  quantum wells."  E Kuokstis et al  in Physica Status Solidi B, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 228(2):559-62. Abstract

South Carolina University.  "Localization of carriers and polarization effects in quaternary AlInGaN  multiple quantum wells."  E Kuokstis et al  in Applied Physics Letters; 2001; 79(26):4375-7. Abstract

Technical University of Moldova (Moldova).  "Frohlich modes in GaN columnar nanostructures."  IM Tiginyanu et al  in Physical Review B (Condensed Matter and Materials Physics); 2001; 64(23):233317-1-3. Abstract

Technische Universitat Munchen (Germany).  "Playing with polarity."  M Stutzmann et al  in Physica Status Solidi B, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 228(2):505-12 Abstract

Texas Tech University.  "AlN/AlGaN Bragg reflectors grown by gas source molecular beam epitaxy."  G Kipshidze et al  in Physica Status Solidi A, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 188(2):881-4.   Abstract

Universidad Politecnica de Madrid (Spain).  "Strong localization in InGaN layers with high In content grown by  molecular-beam epitaxy."  FB Naranjo et al  in Applied Physics Letters; 2002; 80(2):231-3. Abstract

University Blaise Pascal (France).  "Potentialities of GaN-based microcavities grown on silicon substrates."  N Antoine-Vincent et al  in Physica Status Solidi A, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 188(2):519-22. Abstract

University of Bristol (UK).  "On phonon confinement effects and free carrier concentration in GaN quantum dots."  M Kuball et al  in Physica Status Solidi B-Basic Research; 2001; 228(1):195-198. Abstract

University of California-San Diego.  "Polarization charges and polarization-induced barriers in AlxGa1-xN/GaN and InyGa1-yN/GaN heterostructures."  L Jia et al  in Applied Physics Letters; 2001; 79(18):2916-2918. Abstract

University of Iowa.  "Solvothermal azide decomposition route to GaN nanoparticles ; nanorods ; and faceted crystallites."  L Grocholl et al  in Chemistry of Materials; 2001; 13(11):4290-4296.  [Abstract available to ACS publication subscribers, see online Table of Contents

University of Manchester Institute of Science and Technology (UK).  "Temperature dependent optical properties of InGaN/GaN quantum well structures."  P Hurst et al  in Physica Status Solidi B-Basic Research; 2001; 228(1):137-140. Abstract

University of Montpellier / CNRS (France).  "Carrier dynamics in group-III nitride low-dimensional systems: Localization versus quantum-confined Stark effect."  P Lefebvre et al  in Physica Status Solidi B-Basic Research; 2001; 228(1):65-72. Abstract

University of Montpellier (France).  "Observations of band structure and reduced group velocity in epitaxial GaN-sapphire 2D photonic crystals."  D Coquillat et al  in Applied Physics B-Lasers and Optics; 2001; 73(5-6):591-593.  Abstract

University of Montpellier II (France).  "Experimental and theoretical tools for the study of exciton properties  versus disorder in nitride-based quantum structures."  B Gil et al  in Physica Status Solidi B, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 228(2):471-4. Abstract

University of Nottingham (UK).  "Phonon and photon emission from optically excited InGaN/GaN multiple quantum wells."  AV Akimov et al  in Physica Status Solidi B-Basic Research; 2001; 228(1):107-110. Abstract

University of Technology of Valenciennes (France).  "Influence of low-temperature buffer layers on the optical waveguiding  properties of Al{sub x}Ga{sub 1-x}N alloys."  E Dogheche et al  in Journal of Applied Physics; 2001; 90(9):4411-14.  Abstract

University of Tokyo (Japan).  "Progress in growth and physics of nitride-based quantum dots."  Y Arakawa in Physica Status Solidi A, Conference Proceedings:  Fourth International Conference on NitrideSemiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 188(1):37-45. Abstract

University of Tsukuba (Japan).  "Localized exciton dynamics in strained cubic In{sub 0.1}Ga{sub 0.9}N/GaN  multiple quantum wells."  SF Chichibu et al  in Applied Physics Letters; 2001; 79(26):4319-21. Abstract

US Army Research Office.  "Phonons in III-V nitrides: Confined phonons and interface phonons."  M Dutta et al  in Physica E; 2001; 11(2-3):277-280   Abstract

Valencia Univeristy (Spain).  "Residual strain effects on the two-dimensional electron gas concentration  of AlGaN/GaN heterostructures."  G Martinez-Criado et al  in Journal of Applied Physics; 2001; 90(9):4735-40. Abstract

Viginia Commonwealth University.  "Defect reduction with quantum dots in GaN grown on sapphire substrates by  molecular beam epitaxy. "  D Huang et al  in Applied Physics Letters; 2002; 80(2):216-18. Abstract

Waseda University (Japan).  "Time-resolved photoluminescence study of InGaN MQW with a p-contact layer."  T Kuroda et al  in Physica Status Solidi B-Basic Research; 2001; 228(1):125-128. Abstract

Yamaguchi University (Japan).  "Luminescence studies on In{sub x}Ga{sub 1-x}N/GaN multiple quantum wells by selective excitation spectroscopy."  C Sasaki et al  in Diffusion and Defect Data Part B (Solid State Phenomena); 2001; 78-79(297-300).  [ To get to the abstract and a paper preview, go to http://www.scientific.net and search on the title.]

Yamaguchi University (Japan).  "Photoluminescence excitation spectroscopy of InxGa1-xN/GaN multiple quantum wells with various in compositions."  C Sasaki et al  in Physica Status Solidi B-Basic Research; 2001; 228(1):133-136. Abstract

3.  OptoElectronic Devices

A. F. Ioffe Physical Technical Institute (Russia).  "Growth, optical and structural characterization of InGaN/GaN/AlGaN optically pumped lasers."  WV Lundin et al  in Physica Status Solidi A, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 188(1):73-7. Abstract

A. F. Ioffe Physical Technical Institute (Russia).  "Laser-like emission in the blue-green spectral range from InGaN/GaN/AlGaN  structures under optical pumping."  AV Sakharov et al  in Physica Status Solidi A, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 188(1):91-4. Abstract

Academy of Sciences (Belarus).  "Multiple quantum well InGaN/GaN blue optically pumped lasers operating in  the spectral range of 450-470 nm."  GP Yablonskii et al  in Physica Status Solidi A, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 188(1):79-82. Abstract

AXT Inc. (Calif.).  "High-volume production of AlInGaN-based LEDs."  Heng Liu et al  in Compound Semiconductor; 2001; 7(10):59-61.   Article full text online

Beijing Polytechnical University (Peoples Republic of China).  "Tunnel-regenerated multiple-active-region light-emitting diodes with high efficiency."  X Guo et al  in Applied Physics Letters; 2001; 79(18):2985-2986. Abstract

Boston University.  "Current crowding in GaN/InGaN light emitting diodes on insulating  substrates."  X Guo et al  in Journal of Applied Physics; 2001; 90(8):4191-5. Abstract

Brown University.  "A dual-wavelength indium gallium nitride quantum well light emitting  diode."  I Ozden et al  in Applied Physics Letters; 2001; 79(16):2532-4. Abstract

Brown University.  "Fabrication of 50-100 nm patterned InGaN blue light emitting  heterostructures."  Lu Chen et al  in Physica Status Solidi A, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 188(1):135-8. Abstract

Brown University.  "A high injection resonant cavity violet light emitting diode incorporating  (Al,Ga)N distributed Bragg reflector. "  Diagne et al  in Physica Status Solidi A, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 188(1):105-8. Abstract

Brown University.  "A matrix addressable 1024 element blue light emitting InGaN QW diode  array."  I Ozden et al  in Physica Status Solidi A, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 188(1):139-42. Abstract

Brown University.  "Vertical cavity violet light emitting diode incorporating an aluminum  gallium nitride distributed Bragg mirror and a tunnel junction."  M Diagne et al   in Applied Physics Letters; 2001; 79(22):3720-2. Abstract

Cardiff University (UK).  "Non-radiative recombination and efficiency of InGaN quantum well light emitting diodes."  GB Ren et al  in Proceedings of the SPIE - The International Society for Optical Engineering; 2001; 4283(78-84). Abstract

Chonbuk National University (South Korea).  "Buried tunnel contact junctions in GaN-based light-emitting diodes."  SR Jeon et al  in Physica Status Solidi A, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 188(1):167-70. Abstract

Chubu Univeristy (Japan).  "Response speed and optical investigation of InGaN/GaN multiple quantum well  light-emitting diodes (LED)."  Y Morita et al  in Electrical Engineering in Japan; 2001; 137(3):47-51. Abstract

Cincinnati University.  "Temperature behavior of visible and infrared electroluminescent devices  fabricated on erbium-doped GaN."  MJ Garter et al  in IEEE Transactions on Electron Devices; 2002; 49(1):48-54.  [Abstract available to IEEE subscribers online.

Institutional Affiliation Not Given.  "High-power ultraviolet LED grown on GaN."  Laser Focus World; 2001; 37(10):13-13 (Oct 2001).  [Item online (scroll to end) - may require free registration at site.]

Kyushu Institute of Technology (Japan).  "Temperature dependence of electroluminescence intensity of green and blue  InGaN single-quantum-well light-emitting diodes."  A Hori et al  in Applied Physics Letters; 2001; 79(22):3723-5. Abstract

Laval University (Canada).  "Self-heating effects in red (665 nm) VCSELs."  G Knowles et al  in IEE Proceedings-Optoelectronics; 2001; 148(5-6):256-60. [Abstracts available to IEEE member subscribers, see table of contents online.]

McMaster University (Canada).  "Theoretical approach to frequency response of resonant-cavity avalanche  photodiodes."  YG Xiao et al  in Proceedings of the SPIE - The International Society for Optical Engineering, Conference Proceedings:  Photodetectors: Materials and Devices VI, 22-24 Jan. 2001, San Jose, CA,  USA; 2001; 4288(21-30).  Abstract

Meijo University (Japan).  "Transverse mode control in GaN-based laser diodes."  H Amano et al  in Proceedings of the SPIE - The International Society for Optical Engineering; 2001; 4283(67-77). Abstract

Meijyo University (Japan).  "High-efficiency GaN/Al{sub x}Ga{sub 1-x}N multi-quantum-well light emitter  grown on low-dislocation density Al{sub x}Ga{sub 1-x}N."  M Iwaya et al  in Physica Status Solidi A, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 188(1):117-20. Abstract

Mitsubishi Cable Industries (Japan).  "High output power InGaN ultraviolet light-emitting diodes fabricated on  patterned substrates using metalorganic vapor phase epitaxy."  K Tadatomo et al  in Physica Status Solidi A, Conference Proceedings:  Fourth International Conference on Nitride Semiconductors, 16-20 July 2001,  Denver, CO, USA; 2001; 188(1):121-5. Abstract

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