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ARCHIVE OF SELECTED HEADLINE NEWS (2002) (These links are not maintained) |
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December 19, 2002 |
Sony and Nichia announced a collaboration to research, develop and produce violet lasers for optical disc recording and playback. The collaboration, which began in June 2002 but was not made public, gives Sony access to Nichia’s GaN laser patents and research, and provides Nichia with a major market partner for its products. Specific technologies to be shared under this agreement were not specified by either company. [Article in EE Times, Nichia Press Release] |
December 19, 2002 |
Researchers at MIT have developed a quantum-dot OLED. The device consists of a single layer of CdSe/ZnS quantum dots sandwiched between two organic thin films. The luminous efficiency of the device is 1.6 cd/A -1 at 2,000 cd/m -2, with quantum efficiencies ranging between 0.4 and 0.52%. The research was published as "Electroluminescence from single monolayers of nanocrystals in molecular organic devices", Seth Coe, Wing-Keung Woo, Moungi Bawendi and Vladimir Bulovic, Nature, 420:800-803 (19 December 2002). [Press Release; see also article at Nature’s Physics Portal (requires free registration).] |
December 17, 2002 |
GELcore has applied for WIPO protection for a garnet phosphor for converting UV and blue LED light to white light. A device incorporating a UV LED and the garnet phosphor emits at 490 nm to 770 nm. The application (WO 02/099902) is entitled "Broad-spectrum terbium-containing garnet phosphors and white-light sources incorporating the same". [Article in Optics.org] |
December 17, 2002 |
Lumileds announced that its "Luxeon V Dental" light source is to be used in lamps in dental light-curing applications. The product has an output of 600 mW for blue light and a peak wavelength of 460 nm. It has been incorporated into dental light-curing devices manufactured by Mectron and 3M. [Article in CompoundSemi News, Press Release archived at CompoundSemi Online ] |
December 13, 2002 |
Strategies Unlimited has released a new market report on HB-LEDs entitled “Solid-State Lighting: A New Growth Opportunity for High-Brightness LEDs.” The authors predict that the market for HB-LED lighting will grow to over $500 million by 2007, up from $85 million in 2002. In 2001, the total HB-LED market was worth $1.2 billion. [Press Release] |
December 10, 2002 |
A Korean researcher, Young-Chang Kim, has submitted WIPO Application No. WO 02/097903 entitled "Short-wavelength zinc oxide light-emitting device and the manufacturing method thereof". The application covers a UV-LED laser consisting of a p-type InP layer doped with zinc, and covered by a layer of ZnO. [Article, in Optics.org] |
December 2002 |
The December 2002 issue of Nikkei Electronics Asia featured an analysis of blue and white LED technologies, markets, and the possible outcomes of settling major intellectual property disputes. The article provides an overview of the technologies and the major players in this area, including a table showing markets targeted by LED manufacturers . According to the article, more companies are likely to enter blue LED manufacturing, now that significant patent cases have been settled. [Article in Nikkei Electronics Asia] |
December 5, 2002 |
TIR Systems Ltd. (Canada) has received a purchase order worth $1.7 million from BP Australia for solid-state lighting products and services. As part of BP’s global re-imaging program, approximately 175 BP service stations in Australia will use TIR’s ChipStrip product on canopies for convenience store lighting. The contract runs through June 2003. TIR is bidding on a second contract to supply LED lighting for the program after June. [Press Release] |
December 5, 2002 |
GE Consumer Products and GELcore have teamed up to light the National Christmas Tree. New this year among the decorations are numerous strands of red LEDs using GE’s Tetra LED Systemtm. Ten round LED traffic signals have also been incorporated into the tree-topping ornament to provide a "powerful beacon of light at the top." [Press Release] |
December 4, 2002 |
Mitsubishi Electric Corporation and Lumileds Lighting have announced the development of three TFT-LCD modules that use Lumileds’ Luxeon HB-LEDs. The new mercury-free systems are designed for multimedia, medical and point-of- sale/factory automation monitors. All three modules were unveiled December 6, 2002, at the 9th International Display Workshops, in Hiroshima, Japan. The systems will be manufactured by Mitsubishi Electric's ADI subsidiary (Advanced Display Inc.) and shipped to monitor manufacturers during the second half of 2003. [Press Release] |
December 4, 2002 |
Color Kinetics and Intermatic Inc. are to develop LED landscape lighting products. Intermatic will integrate Color Kinetics’ Chromacore® intelligent LED illumination technology in future Intermatic products. [Press Release] |
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November 21, 2002 |
Amtech Lighting Services (a subsidiary of ABM Industries) has been awarded a multi-million dollar contract with the City of Dallas for a pilot program to retrofit traffic signals and replace incandescent lamps with LED units. [Press Release via Yahoo] |
November 18, 2002 |
Scientists from LBNL, Cornell and Ritsumeikan University (Japan) have discovered that the band gap of InN is 0.7 eV, 1.3 eV lower than previously thought. The researchers note that these materials can accommodate very large lattice mismatches without any significant effect on their optoelectronic properties and that the discovery opens the way for the development of InGaN-based solar cells that could convert light to energy with efficiencies approaching 50-70%. [Press Release] Results are reported in Physical Review B (Nov 15), “Effects of the narrow band gap on the properties of InN.” [Journal Table of Contents] |
November 18, 2002 |
Kopin Corporation announced a new ohmic contact technology for GaN LEDs with low contact resistance and a high degree of stability. This is the first time an epitaxial contact has been formed on GaN, according to the company. [Press Release] Results have been published in Applied Physics Letters (Nov 18) in the paper “Formation of epitaxial Au/Ni/Au ohmic contacts to p-GaN.” [Abstract] |
November 14, 2002 |
Senator Pete Domenici (R-NM) will succeed Sen. Jeff Bingaman (D-NM) as head of the Senate Energy and Natural Resources Committee. [Albq. Journal Article] |
November 14, 2002 |
The U.S. Energy Bill will wait until the new Congress convenes next year, Senate negotiators have decided. [Reuters alert] |
November 14, 2002; |
Nichia has entered intellectual property deals with two companies: · Nichia and Cree have agreed to cross-license their blue LED patents, ending an eight-year legal dispute. [Item in Optics.org] · Nichia and Lumileds have entered a broad cross-licensing agreement to share intellectual property rights to LED technologies. [Item in Optics.org] |
November 13, 2002 |
Nanosys CEO, Larry Bock, was named Innovator of the Year by Small Times magazine. [Small Times article] |
November 4, 2002 |
Nanosys announced licensing 40 patents and patent applications from MIT from the lab of Professor Moungi Bawendi. The patents cover elements of quantum dots, including devices such as nanocrystal lasers and LEDs. [Press Release] |
November 1, 2002 |
National Public Radio’s “Living on Earth” program aired two radio segments featuring LEDs: · The “Revolutionary Lighting” segment discussed LEDs as the new energy-efficient technology that experts predict may take over the lighting industry world. The story quotes Sandia’s Jerry Simmons, Color Kinetics’ Kevin Dowling, and IEEE Spectrum’s Glenn Zorpette. · The “Light Up the World” segment featured an interview with David Irvine-Halliday, Director of the Light Up the World Foundation (LUWF) · LUWF brings white LED lighting to homes in the developing world. Irvine-Halliday recently received the Rolex Award for Enterprise for his work.[Audio segments and transcripts available here.] |
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October 28, 2002 |
STMicroelectronics has developed an efficient silicon-based light-emitting device with quantum efficiencies comparable to GaAs and other compound semiconductors. The technology is based on a structure in which ions of rare-earth metals such as erbium or cerium are implanted in a layer of silicon dioxide enriched with silicon nanocrystals. The frequency of the emitted light is determined by the choice of rare-earth dopant. [Press Release] |
October 2002 |
Nanosys Incorporated has been securing licenses to key intellectual property: · On October 28, 2002, it obtained an exclusive license from the Regents of the University of California for nanowire heterostructures developed by Dr. Peidong Yang. [Press Release]. · On October 22, 2002, Nanosys signed an exclusive field of use license agreement for a broad set of nanotechnology patents from Dr. Paul Alivisatos at the Lawrence Berkeley National Laboratory. The patents cover work in zero and one-dimensional nanomaterials such as nanocrystals (quantum dots), nanorods, and nanotetrapods. The portfolio covers fundamental nanotechnology-enabled applications in light-emitting, detecting and photovoltaic devices. [Press Release] |
October 28, 2002 |
An article reviewing the penetration of green LEDs into the traffic signal market was published on the Energy Central website. The article discusses the technology behind the green LED signals and how packaging allows existing signal lights to be retrofitted for LED signals. In addition, the article covers energy savings resulting from the switch to LED lamps and initial startup costs. Activities in the state of California are reviewed. [Article – Free registration at Energy Central required to access the article.] |
October 22, 2002 |
Technologies and Devices International (TDI) has a demonstrated 2-inch diameter GaN templates with p-type electrical conductivity. The GaN layer is grown by hydride vapor phase epitaxy (HVPE) on a sapphire substrate. Electrical carrier concentrations in the GaN layer can be varied from 1016 [10 to the sixteenth per] cm3 to 1018 [10 to the eighteenth per] cm3. This is the first time that thick p-type GaN layers have been grown using HVPE, according to the company. [Press Release] |
October 18, 2002 |
The FY03 DOE SBIR/STTR solicitation was released. The technology areas covered include both light emitting diodes (LEDs) and organic light emitting diodes (OLEDs) for general illumination. Application materials are available online. The deadline for applications is January 14, 2003. |
October 7, 2002 |
Osram Opto Semiconductors (Germany) has extended the service life of its GaN laser in continuous wave mode from 2 minutes to 143 hours. Improvements in the growth of AlInGaN structures on SiC substrates are responsible for this technological advance, according to the company. [Article published in Nikkei Electronics Asia] |
October 2002 |
Rensselaer Polytechnic Institute’s Lighting Research Center will be holding a two-day workshop, the LED Lighting Institute, November 7-8, 2002. The workshop covers the design and specification of LED lighting fixtures. Dr. Nadarajah Narendran will be the primary instructor. Additional information and the registration form are available at the Lighting Research Center website. |
October 2, 2002 |
Nichia announced that it is to begin sampling a 375 nm UV laser diode -- the peak wavelength is achieved with an output power of 2 mW and threshold current of 45 mA on an operating voltage of 4.5 V. Nichia appears to be the first company to make a UV laser diode commercially available, according to an article at CompoundSemiconductor.net. |
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September 26, 2002 |
Nichia announces that it has developed a high-output UV (365 nm wavelength) LED with an output of 100 mW at a drive voltage of 4.6 V and a drive current of 500 mA. [Press Release] |
September 25, 2002 |
AXT announced new blue LED products designed for SMD packaging with a 40% improvement in brightness compared to the company’s previous generation LEDs. They are “comparable in brightness to products offered by the world's top tier LED manufacturers,” according to the company. Devices will be available in production volumes by the 4th quarter of this year. [Press Release] |
September 24, 2002 |
Researchers at the University of California-Berkeley have developed the world’s first GaN nanowire laser. When the GaN nanowire is optically pumped, a plasma of holes and electrons is produced in the nanowire. Recombination across the bandgap results in UV emission in the 360-400 nm wavelengths. The research appeared in Nature Materials, volume 1 (October 2002). [Summary Article at Nanotechweb.org] |
September 23, 2002 |
University of California-Santa Barbara professor Shuji Nakamura has lost part of his patent suit against his former employer, Nichia Corporation. The lawsuit centers on rights to the patent (JP2628404) for two-flow MOCVD technology, a key aspect of the blue LED production. This invention was made in 1991 by Nakamura while he was in the employ of Nichia. The Tokyo District Court ruled that Nichia is the rightful owner of the patent. The court is expected to rule later on whether Nakamura can claim any portion of the profits from the invention. [Article from EE Times, reprinted at theworkcircuit.com] |
September 20, 2002 |
ATMI has been awarded a DARPA contract to develop 4” bulk GaN. The $9,463,955 contract is entitled “Highly Uniform, Robust, AlGaN/GaN HEMTs on Four Inch GaN and SiC Substrates.” Although the award was made in early July 2002, it has not yet been made public by the company. [FedBizOpps Notice; news item in CompoundSemi News, 9/20/02] |
September 18, 2002 |
University of California-Santa Barbara’s Shuji Nakamura was honored with two major awards for his GaN research.The Economist honored him with an Innovation Award in the “No Boundaries” category for his development of the GaN laser. Nakamura was also the a co-recipient of the Takeda Award, along with Isamu Akasaki and Hiroshi Amano of Japan’s Meijo University. The Takeda Foundation, which administers the award, recognized Nakamura for the development of both the GaN LED and the GaN laser. In addition to the recognition, Nakamura will receive a 50 million yen ($416,500) prize. [Press Release] |
September 17, 2002 |
Toyoda Gosei and Nichia have agreed to end all disputes and lawsuits over the past six years between the two companies in order to prevent and resolve any disputes in the future. [See Press Release and article in CompoundSemi News.] |
September 4, 2002 |
Fred Schubert of Boston University has been named Senior Distinguished Professor of the Future Chips Constellation at Rensselaer Polytechnic Institute. The focus of this faculty constellation is on technology that will advance imaging, lighting, sensing, and communications. The technology will include three-dimensional chip architectures as well as optical, microwave, terahertz and plasma wave communications. [Press Release] |
(These links are not maintained) · "Let There Be Light," which covers developments in GaN LEDs, mentioning work at Color Kinetics, Nichia, Lumileds, Osram, Cree, GELcore, Sandia National Labs, Rohm, Toshiba, Toyoda Gosei, and Mitsubishi. · “Government Funds Energize Solid-State Lighting Research” briefly outlines the Energy Bill, and research efforts in government labs and agencies. · A feature article, “They Might Be Giants,” that reports on the world’s top 100 R&D spenders, and then on five technologies likely to reap large rewards in the next five years. One of these is gallium nitride semiconductors for white LEDs. [Press release] · “A Visit to Nichia,” and “Who’s Who in Solid State Lighting” are also of interest. |
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August 28, 2002 |
Color Kinetics closes a $17 million round of financing, funding that will help the company accelerate the arrival of solid-state lighting to the market. [Press Release] |
August 27, 2002 |
Uniroyal Technology Corporation announced that it has filed for reorganization under Chapter 11 of the U.S. Bankruptcy Code so that it may facilitate debt restructuring and relieve cash flow issues . The company anticipated no disruptions to sales, services or employees as a result of this filing. The U.S. Bankruptcy Court has approved a series of first-day orders, including authorizing a debtor-in-possession financing facility of up to $15 million on an interim basis. [ Press Release : on file at Compound Semi Online] |
August 20, 2002 |
Paragon Innovations and U.S. LED Ltd. have jointly developed LED technology that outperforms neon in commercial signage applications. The company states that compared to neon in channel letters, the LED solution cuts energy use by 80-90%, while operating for 100,000 hours. [Press Release] |
August 16, 2002 |
As part of its 6th Framework Programme, the European Union will provide up to 3.65 billion Euros in funding for photonics research, allocated by the Information Society Technology (IST) Directorate General. The first call for FP6 projects will be in November 2002, with project start dates as early as March 2003. [Article in Optics.org] |
August 14, 2002 |
Kopin Corporation has been named to Inc magazine’s "The Innovation 50," a list of the most inventive small companies in America. Kopin’s high rate of patent awards and applications was cited as a major reason for the award. Kopin manufactures the CyberLitetm blue LED, the CyberDisplaytm microdisplay, and a line of vertically stacked heterojunction bipolar transistors. [Press Release] |
August 9, 2002 |
Nichia and Toyoda Gosei have entered into negotiations to end any and all patent disputes regarding III-nitride semiconductors, including blue LEDs. No further details of the agreement were made public. [ Nichia Press Release, Toyoda Gosei Press Release] |
August 6, 2002 |
Advanced Epitaxy Technology (Taiwan) announced the development of its “Virtual-chip Bonding” (VB) technology for producing a vertical blue LED on GaAs. The high yield GaN on GaAs chip is made by wafer bonding a GaN on sapphire chip to a GaAs substrate, then removing the sapphire. At 20 mA, the chip has a dominant wavelength at 470 nm, an operating voltage of 3.3 V, and output power of about 2.5 mW. The brightness of this LED is due to more efficient current spreading and a thick n-type GaN window layer. [ Article in Compound Semiconductor] |
August 6, 2002 |
TIR Systems Ltd. has obtained a contract valued at CDN $9 million from BP to use TIR’s ChipStrip LEDs in 850 service stations as part of BP’s corporate re-imaging program. [Press Release] Also, Lumileds announced that its Luxeon LED light sources have enabled TIR to create its first solid-state RGB fixtures with light outputs similar to halogen and metal halide systems (TIR’s “Destiny Colorwash Luminaire,” introduced by TIR in June of this year, will ship in the 4th Q of 2002 ). [Press Release] |
July 29, 2002 |
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July 25,2002 |
Two journals have recently issued volumes devoted to the III-V compounds and VCSELs: · The August 2002 issue of Semiconductor Science and Technology (vol. 17, no. 8) is a special issue on III-V semiconductor alloys. [ Table of Contents] · In the July 2002 issue of MRS Bulletin, guest edited by K. L. Lear and E. D. Jones, the focus is on VCSELs. [ Table of Contents] |
July 23, 2002 |
United Epitaxy Corporation (Taiwan) has developed a large-area, high-power AlGaInP LED. The ALGaInP epiwafer is bonded to a silicon substrate. The finished chip measures 2.5 mm x 2.5 mm and can operate at more than 5 A without saturation. The total flux for a single chip is 200+ lumens. Mass production of the chip is schedule for the fourth quarter of 2002. [Article at CompoundSemiconductor.net] |
July 23,2002 |
Scientists with RWTH (Germany), the Stepanov Institute of Physics (Belarus) and Aixtron have developed InGaN/GaN-on-Si blue lasers. Device wavelengths are centered on 447 nm, , the maximum operating temperature is 420K, and the device has a low threshold current, which allows the laser to attain a power density of 270 kW/cm2 and an output power of 8 mW. These achievements were presented at the International Workshop on Nitride Semiconductors (held July 22 - 25, Aachen, Germany). [ Article at CompoundSemiconductor.net] |
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July 15, 2002 |
Emcore has been awarded US Patent No. 6,413,839 -- “Semiconductor device separation using a patterned laser projection” -- for its laser projection separation technique used to divide GaN-on-sapphire processed wafers into individual devices.The technique replaces the industry-standard scribe-and-break technology. [ Press Release] |
July 1, 2002 |
Sanken Electric Company Ltd. has entered the HB-LED market with two AlGaInP-based devices. The red (620 nm) LED emits 37 to 74 lm on 400 to 800 mA current while the yellow (590 nm) LED emits 21 to 42 lm on 400 to 800 mA. According to Sanken, both LEDs are 50 to 100 times brighter than their standard LEDs. Sanken is also planning to develop blue and white HB-LEDs by applying their wafer direct bond technology to GaN-on-Si LED chips. [ Press Release and Specs] |
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June 27, 2002 |
A short note appearing in the Economic Daily News announced that Taiwan’s Quan Xing Development Technology Co. has developed a three-wavelength white LED. The company plans to start mass production of the LED in July 2002. Additional information about this company and its LED technology were not available at the time of this posting. |
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June 25, 2002 |
Nichia Corporation and Osram Opto Semiconductors GmbH have entered into a patent cross-license agreement covering InGaN semiconductor and packaging technology. The agreement effectively ends the patent disputes between the two companies. [Press release] |
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June 12, 2002 |
In a recent speech, Energy Secretary Spencer Abraham called solid-state lighting an “area of exciting possibilities.” He referred to the Next-Generation Lighting Initiative (see The Energy Policy Act of 2002 -- HR.4) when he said, “… we expect to formalize a new partnership with industry and devote more resources to the development of next-generation solid state lighting in the near future.” Abraham’s remarks were made in a speech for the 13th Annual Energy Efficiency Forum, National Press Club, in Washington, D.C. [Full text of speech] |
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June 7, 2002 |
Lumex has formed Sunbrite, a group dedicated to developing LEDs for general lighting applications. Sunbrite will supply high power LEDs for signs, traffic signals, and vehicle lighting. [Article in Optics.org] |
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June, 2002 |
Sanyo Denki announced the development of a novel ion injection system for GaN 405 nm laser manufacture. The method eliminates the etching step, using ion injection to form electrodes in a substrate once the substrate is grown. A new, 405 nm blue-violet-emitting semiconductor laser fabricated by this process produces outputs at 5 mW on an operational current of 45 mA. [Article in Laser Focus World] |
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June, 2002 |
DARPA’s semiconductor ultraviolet optical sources project (SUVOS), aimed at developing technology for biological agent detection and other military applications, has been profiled in an article in Laser Focus World (see “Military Program Develops Novel UV Sources”). [In one approach to solid-state lighting, it is necessary to generate primary near-UV light, which is downconverted using phosphors into visible white light. The development of technologies for generating such near-UV light will benefit from the DARPA-sponsored work on generating the deeper UV light required for the applications targeted in the SUVOS project.] The program is currently in contract negotiations. Three awards have been made public to date:
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May 14, 2002 |
Researchers at the University of Bremen, in collaboration with the École Polytechnique Fédérale de Lausanne (Switzerland), have developed a pulsed, GaN-based, blue-violet laser diode. [Article in Compound Semiconductor] |
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May 8, 2002 |
The full text of H.R. 4, the Energy Policy Act of 2002 (Engrossed Senate Amendment) (formerly S. 517) has been posted on the web ( http://bingaman.senate.gov/mediafiles/hr4.pdf). Provisions for the Next Generation Lighting Initiative appear in Section 1213, pages 513-520. |
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May 1, 2002 |
Cermet, Inc. has been selected by DoD’s Missile Defense Agency to develop GaN single crystal boules from which high quality substrates can be manufactured. [Press Release] |
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April 25, 2002 |
Senate bill S. 517 (The Energy Policy Act of 2002, a.k.a. the Daschle-Bingaman Energy Bill) passed the Senate on April 25, 2002. According to a 4/26/02 press release from the US Senate Committee on Energy and Natural Resources, the bill “increase[s] federal investment in R&D on energy efficiency to over $1 billion per year by 2006 in such areas as next generation lighting technologies.” The final provisions of the bill will be worked out in conference with the House. The full text of the final bill will be available at the Senate Energy Committee website (http://energy.senate.gov) within the next ten days. |
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April 16, 2002 |
Microsemi Corporation has developed two new drivers to control LEDs used in displays: one is for providing even lighting of multiple LEDs used as indicator lights in electronics; the other is a high efficiency step-up boost controller for LEDs in backlit or frontlit systems. This driver can be used to control white, high brightness blue, green, or ultraviolet LEDs used in mobile phone and PDA displays. Both drivers are optimized for use in battery-driven applications. [More detail available in the press release] |
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April 14, 2002 |
Lumileds Lighting introduced the white Luxeon 5-Watt, an LED capable of emitting up to 120 lumens from a single emitter package. The package occupies the same footprint as the Luxeon 1-Watt, which emits 30 lumens. The Luxeon 5-Watt thus achieves four times the luminous flux of the 1-Watt version. Green, cyan, blue and royal blue Luxeon 5-Watt packages have also been manufactured. [More detail available in the press release available from CompoundSemi Online.] |
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April 9, 2002 |
Cree Inc. will open a branch in Tokyo to better service its Japanese customers. In connection with this move, Sumitomo has been named as strategic partner of Cree, agreeing to buy $24 million of Cree’s LED products over the next 15 months, based on customer demand and the terms of the agreement. In Japan, Sumitomo will have exclusive distributorship rights over Cree LED chip products and silicon carbide wafer products for the next three years. Sumitomo will primarily acquire Cree's MegaBrightTM and XBrightTM LEDs. [Press Release] |
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April 9, 2002 |
Palo Alto Research Center, Inc. (PARC, formerly part of Xerox) has developed a UV LED on single crystal AlN. The device was created in collaboration with Crystal IS, manufacturer of the AlN substrate. The LED consists of GaN/AlGaN multiple-quantum-wells with emissions near 360 nm. The LED is 100 microns in diameter. It is targeted for applications in the areas of biological agent detection, solid-state lighting, and sterilization and analytical devices. [Article in CompoundSemi News] |
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April 3, 2002 |
University of California-Santa Barbara professor Shuji Nakamura has been awarded a 1.7 billion yen (~$16 million) five-year Exploratory Research for Advanced Technology (ERATO) grant. Nakamura will use the grant to study methods for making bulk GaN crystals or ingots and will initially focus on making a special high-pressure, high-temperature vessel for bulk crystal fabrication. The intellectual focus is on exploring the nature of inhomogeneity in nitride crystals. For this research, Nakamura will collaborate with colleagues at the Japan Tokyo Science University and at Tsukuba University. [ Press Release] |
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March 19, 2002 |
General Electric has received US Patent No. 6357889, entitled “Color tunable light source.” The patent covers a device containing multiple lasers or LEDs coupled that excite multiple phosphors with different emission wavelengths. The electrical circuitry permits individual control of the laser diode and LED elements, permitting color tuning through the selective powering of the different diodes. (Full text of patent from USPTO) |
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March 15, 2002 |
Sanyo announces the development of a new blue (405 nm) semiconductor laser. Output is at 5 mW at a current of 45 mA, and a threshold current of 40 mA. Beam divergence is 8° in the horizontal plane and 30° in the vertical. This gallium nitride-based device comes in a 5.6 mm diameter package. (Article in Optics.org) |
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March 5, 2002 |
LumiLeds’ Luxeon high power LED-based light sources are making their first-ever appearance in a vehicle headlamp on a concept car unveiled at the Geneva Motor Show in Switzerland. [Press Release] |
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March 4, 2002 |
Nichia announces development of high power InGaN LEDs achieving 10x the electrical power of current parts. Low power limitations are overcome by increasing the area of the InGaN chip to 1 mm2 and powering the chip with up to two watts of electrical power. At a 350 mA current, photometric luminous flux for the packaged LEDs is 23 lm for white, 7 lm for blue, 28 lm for blue-green, and 20 lm for green. [Press Release] |
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February 22 2002 |
Shuji Nakamura reported to Optics.org that the Nichia dispute (blue LED patent rights and compensation) will be settled by May of this year. If Nakamura wins, he says he will license his patents to all companies working on the technology.[See Optics.org news item online] . |
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February 20, 2002 |
TradeRadius Online Inc. (Bellview, WA & Canada) has entered into an acquisition agreement to acquire LEDdynamics , a private company located in Rochester, Vermont. LEDdynamics’ core technologies, according to the press release, include a patent-pending technology that controls the temperature of white light and replicates natural sunlight shadings. |
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February 19, 2002 |
Kyma Technologies ships first free-standing, 2-inch GaN wafer. GaN substrates are 50 mm in diameter, 500 mm thick. Company expects 2” wafers to be commercially available by end of 2nd Q 2002, 4” GaN wafer development underway. [ Press Release ] |
February 14, 2002 |
Oriol, Inc.introduces first package-ready die product line, “GIGABRIGHT.” Emitting in the blue 445 – 475 nm spectrum, projected performance is as high as 5 candela at 20mA forward current, when using 5mm 15 degree viewing angle packaging. [More detail at CompoundSemi News online.] |
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February 7, 2002 |
Bivar Inc.’s Optoelectronics Division introduces high powered ultraviolet LEDs with typical intensities from 500 mcds (700 mcds maximum), with a typical stable wavelength of 400nm, and a 30-degree viewing angle. [Press Release] |
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January 3, 2002 |
Uniroyal Optoelectronics announces a high power, large area blue light emitting diode - this 450 nm LED produces 60 mW of power, making it one of the brightest LED devices in the HB-LED market, according to the company. The company is also developing large area UV chips. |
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