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ISSUE 14: BUSINESS AND TECHNOLOGY NEWS |
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A selection of news appears in this section. |
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B. New Products C. Novel LED Lighting Applications E. Government Funding News and Opportunities G. Conferences Where possible, links to full-text articles and press releases have been included in the abstracts. Click on the links in the table below to go directly to the abstract. |
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· Advanced Epitaxy Technology has produced a GaN-on-GaAs vertical blue LED. · Agilent moves its III-V manufacturing facility to Ft. Collins, Colorado. · Aixtron and the University of Tsinghua will co-develop GaN materials and devices. · EMCORE has developed a new MOCVD epitaxial growth platform for the production of laser diodes. · EMCORE has received US Patent No. 6,413,839 for a novel device separation technique. · Epiworks and the University of Illinois plan to manufacture 850 nm VCSELs at the University of Illinois. · Kopin Corporation was named to Inc Magazine’s “The Innovation 50” list of the most inventive small companies in America. · Nichia and Toyoda Gosei announce negotiations to end their III-nitride patent disputes. · Rensselaer Polytechnic Institute has updated its Lighting Research Center’s website. · Samsung Corning has started pilot-scale production of GaN wafers. · Sandia’s work was covered in Electronic Materials Update and Design News. · Sarnoff and Algen Design Services have developed a LED-based color visualization system. · TDI has opened its new 32,000 sq ft GaN and AlGaN epitaxial wafer production facility in Silver Spring, Maryland. · TIR Systems has received a CDN $9 million contract from BP to light service stations. · Uniroyal Technology files for bankruptcy protection and estimates that it will take between 6-9 months to emerge from Chapter 11; customers will notice “no disruption in operations.” · Applied Nanotech Inc. has developed two new products: carbon nanotube gated electron sources and colloidal solutions of silicon nanocrystals (quantum dots). · E-Ink, TOPPAN Printing Ltd., and Royal Philips Electronics have jointly developed an electronic-ink-based, high resolution, active-matrix color display. · GELcore announces several products at the June LightFair exhibition: the new (YAG-alternative) phosphor for white LEDs (originally announced 2/02); two new LED SMD platforms for automotive applications; and Tetra™ Channel Lighting production, soon to be available in blue and green. GELcore also announced that it is the first ENERGY STAR partner for LED traffic signals. · Gentex’s rearview mirrors equipped with white LED lighting are shipping in the 2003 (model year) Chrysler Sebring Coupes. · Kopin Corporation and North Carolina State University have developed a highly-efficient blue InxGa(1-x)N/GaN MQW LED, marketed as the CyberLitetm. · Lumileds announced that Color Kinetics’ newest luminaires will incorporate Lumileds’ Luxeon 1-Watt LEDs. · Paragon Innovations and US LED have jointly introduced LED technology that outperforms neon in commercial signs. · Sanken Electric Company has developed super bright AlGaInP-on-silicon red and yellow LED chips. · TIR Systems uses Lumileds’ Luxeon LEDs to develop RGB colorwash fixtures with light output comparable to halogen and metal halide lamps. · UEC has developed a means to bond AlGaInP LED epiwafers to silicon substrates, permitting the development of a 2.5 mm x 2.5 mm, high-power device. C. Novel LED Lighting Applications · Inventors Sinner and Willenz have developed a portable, solar-powered white LED light source for use in developing communities and disaster areas. · Scientists from Georgia Tech develop a single-molecule silver oxide light source. · IBM’s Microelectronics division have used electron holography to obtain direct, quantitative information on the distribution of dopants in semiconductors. · Rice University and Baylor College of Medicine have developed carbon nanotubes that fluoresce at wavelengths between 800 and 1600 nanometers. · Researchers with RWTH, the Stepanov Institute of Physics and Aixtron have developed the first optically-pumped InGaN/GaN on Si blue laser. · Researchers at the University of Lyon (France) have used laser pulses to stimulate white light emission from water droplets. E. Government Funding News and Opportunities · IEEE Spectrum online briefly reviews government spending on solid-state lighting research in its September 2002 issue. · The European Union plans to provide photonics with 3.65 billion Euros in funding as part of its 6th Framework Programme (FP6). · NSF Solicitation: NSF SBIR/STTR FY-2002 - Topic K, Electronic Materials / Electronics: Semiconductor and Other Materials; Opens Oct 2002, closes Jan 22, 2003. · NSF encourages US/European materials efforts: NSF is working with European funding organizations to enhance opportunities for collaborative activities in materials research. · Compound Semiconductor has devoted its July 2002 issue to wide-bandgap materials, including an article reviewing SiC, sapphire, bulk GaN, bulk AlN, and Si substrates. · Compound Semiconductor ran an article in July 2002 that provided an update on Japan’s Light for the 21st Century project. · EE Times has published an overview of the white LED lamp market in its July 2002 issue. · IEEE Spectrum features GaN LEDs in an extensive article, “Let There Be Light” in September 2002 issue. · MRS Bulletin devotes its July 2002 issue to VCSELs. · Opto & Laser Europe has published an article reviewing recent advances in high-brightness LEDs. · Semiconductor Science and Technology’s August 2002 issue was devoted to III-N-V semiconductor alloys. · The American Conference on Crystal Growth and Epitaxy was held in August. · The International Workshop on Nitride Semiconductors took place in July. · Intertech announces its fall conferences: Light Emitting Diodes 2002 and OLEDs 2002. · SPIE held its Solid State Lighting II conference as part of its 47th annual meeting in July. |
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A. Developer News · Advanced Epitaxy Technology (Taiwan) has developed a wafer-bonding technology that can bond GaN-based LEDs to GaAs substrates, producing a vertical blue LED. The technology is called “Virtual-Chip Bonding”, and the resultant LEDs are categorized as “VB-LEDs”. In Virtual-Chip Bonding, a GaN-on-sapphire LED is bonded to a GaAs wafer, then the sapphire layer is removed. The resulting VB-LED is p-side down and requires a single bonding wire. A thick, n-type GaN window can be added to increase light extraction. Efficient current spreading and a thick GaN window contribute to VB-LED brightness. The dominant wavelength is 470 nm, the operating voltage is 3.3 V, and the output is about 2.5 mW. [ Article in Compound Semiconductor News ] · Agilent Technologies has consolidated its manufacturing facilities by moving a number of fabrication lines to Fort Collins, Colorado. Among these are its III-V component manufacturing facilities. III-V research facilities, however, also remain in California. Compound semiconductor lines, including HB-LEDs manufactured at Lumileds, InP work at the Test and Measurement facility in California, and VCSEL work being conducted in California, Asia and the UK all remain unaffected by the reorganization. Once the reorganization is complete, Agilent will be closing its fabs in Newark, NJ, and Santa Clara, California. [ Article in CompoundSemi News ] · Aixtron and the University of Tsinghua (China) have agreed to collaborate on the development of GaN materials and devices for high-power, high-frequency electronic applications. The University has recently installed an Aixtron reactor to enable them to produce blue LEDs. The University's research, headed by Yi Luo, focuses on the use of GaN materials for high-power, high-frequency applications in harsh environments such as engines, radar systems, and microwave ovens. [ Press Release ] · EMCORE has developed a new MOCVD epitaxial growth platform for the production of laser diodes for consumer electronics applications. The new platform, the Enterprise 300LDM, is optimized for the production of InP-based materials, long wavelength, IR and visible lasers, and VCSELs. JVC Japan has bought the first machine. [ Press Release ] · EMCORE announced that it had received US Patent No. 6,413,839 for its method of separating processed wafers into several thousand individual devices. The technique works with GaN-on-sapphire wafers and wafers consisting of other semiconductor materials grown on sapphire. The novel technique uses a patterned laser projection to achieve the separation. The patent, entitled “Semiconductor device separation using a patterned laser projection”, was granted on July 15, 2002. The technique has been in use for high volume device manufacturing for a year. According to EMCORE, the technique has separation yields of 99%, is low-maintenance, and results in rapid device manufacturing times. [ Press Release ] · Epiworks and the University of Illinois are planning to develop VCSEL manufacturing capabilities at the University’s Micro and Nanotechnology Laboratory. The initial focus will be the manufacture of 850 nm VCSELs, with a longer-term focus on using the facility to study novel designs and materials. The project is headed by Kent Choquette, who previously worked at Sandia National Laboratories. [ Article in Compound Semiconductor ] · Kopin Corporation was named to “The Innovation 50”, Inc Magazine’s list of the 50 most inventive small companies in America. Its aggressively growing patent portfolio was cited as a major reason for its inclusion on the list. Kopin manufactures the CyberLite™ blue LED that operates on 2.9 V and outputs at 100 mcd. Other products include the CyberDisplay™ microdisplay and vertically stacked heterojunction bipolar transistors. [ Press Release ] · Nichia and Toyoda Gosei announced on August 12, 2002, that they had begun negotiations towards eliminating any and all patent disputes between them regarding III-nitride semiconductors, and in particular, blue LEDs. Disputes regarding all patents, both inside and outside of Japan, are targeted for resolution. Further details were not provided in the companies’ press releases. [ Nichia Press Release, Toyoda Gosei Press Release ] · Rensselaer Polytechnic Institute’s Lighting Research Center’s >website has unveiled a new look. The site now features researchprojects, resources, educational opportunities, and links to other LED websites. [ Website ] · Samsung Corning (South Korea) announced that it had begun pilot-scale production of GaN wafers at its new Photonic Materials Pilot Plant in Suwon. Samsung Corning intends to provide wafers for next generation high-density optical date storage media. [ Press Release ] · Sandia National Lab’s InGaN LED and their patented cantilever epitaxy process were featured in the July 2002 issue of Electronic Materials Update, in an article titled “Sandia’s White LED Upstart.” The article notes that researchers James Gee and Jerry Simmons have produced an InGaN LED that is “one of the most commercially viable because of the substrate.” The article continues with a discussion of the disadvantages of sapphire as a substrate for GaN, and Sandia’s work with cantilever epitaxy as a sapphire surface preparation technique. The article ended with a brief overview of Sandia’s Solid State Lighting website and the Next Generation Lighting Initiative. Sandia’s SSL work was also the subject of a short article appearing in an item dated July 22 on the Design News website. [Registration required to view Article in Design News] · Sarnoff Corporation and Algen Design Services have teamed up to develop the Colorontm electronic color visualization system. The product is designed to ensure color consistency between displays among individuals working remotely on a design project. This overcomes a common design problem, namely that the same color is rendered differently by every monitor, depending on brand and settings. Coloron consists of an LED display device linked to a standard personal computer. The Coloron has a square surface that acts as a “color chip”, presenting each color in a standardized way. Multiple color chips can be viewed side-by-side and textures can be programmed. The unit is portable, allowing designers to view colors under a wide array of lighting conditions. By using multiple narrow-band light sources, the Coloron also overcomes changes in color perception ability by the aging human eye. [ Press Release ] · TDI has started production of GaN and AlGaN wafers at its new production facility in Silver Spring, Maryland. The new facility is 32,000 sq ft in area and includes facilities for crystal growth, epitaxial deposition and material characterization. The company anticipates the production of bulk GaN substrates at a future date. TDI moved to the new facility in order to enter into volume substrate production. [ Article at CompoundSemiconductor.net ] · TIR Systems has received a CDN $9 million contract from BP [ Press Release ]. The contract covers the incorporation of TIR’s ChipStrip LED lighting system in 850 service stations as part of BP’s corporate re-imaging program. In response to the contract award, TIR has begun a facility expansion and is hiring new staff. [ Press Release ] · Uniroyal Technology (UTC) has filed for Chapter 11 bankruptcy protection as it restructures debt and reorganizes its operations. In a press release dated August 26, 2002, UTC stated that customers, vendors and employees should notice no difference in company operations during reorganization. UTC petitioned the court to allow it to pay pre-petition claims to vendors providing goods and services to the strongest of UTC's subsidiaries, Uniroyal Engineered Products LLC. The pre-petition claims of the other subsidiaries (Sterling Semiconductor, Uniroyal Optoelectronics and NorLux Group) will be resolved through the bankruptcy proceedings. In recent weeks, UTC acknowledged that it was low on cash and credit and predicted that it would seek bankruptcy protection. When UTC began fabricating LEDs in the summer of 2001 at its Tampa, Florida, facility, it was hailed as the cornerstone of a new Florida High Tech Corridor. However, raising the huge capital investment needed for LED production could not be fully realized. LED sales in the past nine months were only about $8 million, about $85 million below expected sales. In its latest SEC filing on June 30, UTC had ~$114,000 in cash and $781,000 in credit. Another news report noted that the company wants to reorganize around its optoelectronics division and expects to emerge from Chapter 11 in 6 – 9 months. [ Notice of Bankruptcy ] · Applied Nanotech Inc. has announced the development of two new nanotechnology products. The carbon nanotube gated electron sources (triode structures) are the first of its kind that are commercially available. They operate on control voltages of less than 100 volts. The second product, colloidal solutions of silicon nanocrystals (quantum dots), was announced in November 2001, but has now become commercially available. [ Article at Global Technoscan ] · E-Ink, TOPPAN Printing Ltd., and Royal Philips Electronics have invented an electronic-ink-based, high-resolution, active-matrix color display. The display is 5-inches on the diagonal, can display 4,096 colors, and has a resolution of 320 x RGB x 234 (80 pixels per inch). The image-stable display is targeted for mobile applications such as PDAs. [ Press Release ] · GELcore/GE made a number of product announcements at the Lightfair 2002 event held in June. This included a re-announcing of their patent-pending phosphor for white LEDs (originally announced in February of this year); new LED platforms for the automotive markets -- the TL Class SMD and SM Class SMD, the company's first offerings for automotive lighting, meant to replace traditional incandescent miniature lamps; the near-term availability of the company’s Tetratm Channel Lighting System in blue and green (the company says is the only UL listed LED system for signage applications and that the Tetra system is up to 80% more efficient than red neon); and a press release about the fact that GELcore is the first (EPA/DOE) ENERGY STAR Ò partner to manufacture high efficiency LED traffic signal products. [Press releases on Phosphor, LED platform, Tetra ( here and here), and Energy Star.] · Gentex has developed a rearview mirror equipped with two white LED lights. Each mirror features two binary complementary white lights, one for the driver and one for the passenger. The LEDs are versions of Gentex’s Orcatm power LEDs in specially engineered modules. Each LED light fixture produces in excess of 7.5 lumens of white light on 0.6 watts and the fixtures are compatible with standard electronic assembly processes. The mirrors are shipping with the (2003 model year) Chrysler Sebring Coupe. · Researchers at Kopin Corporation and North Carolina State University have developed a novel blue InxGa(1-x)N/GaN MQW LED that is more efficient than competing devices. The LED, which is being marketed as Kopin’s CyberLite™ LED uses 2.9 V on 20 mA current and output at 100 mcd. When combined with a yellow phosphor, the LED can emit white light. The science behind the CyberLite was published as “Effect of thickness variation in high-efficiency InGaN/GaN light-emitting diodes,” J. Narayan, H. Wang, J. Ye, S.-J. Hon, K. Fox, J. C. Chen, H. K. Choi and J. C. C. Fan, Applied Physics Letters, 81(5):841-843 (July 29, 2002). [ Press release, APL paper abstract] · Lumileds announced that Color Kinetics’ new bColortm luminaire fixtures will incorporate Lumileds’ Luxeon 1-Watt LED series. The Luxeon products will be featured in the ColorBlast® 6 and 12 series of indoor/outdoor wallwashing fixtures. The largest of the two, the ColorBlast 12, incorporates 36 Luxeon LEDs and has a combined light output equaling 36 conventional HB-LEDs. The Luxeon 1-Watts will also be used in Color Kinetics’ ColorBursttm 6 spotlight fixture. All three Color Kinetics products are scheduled for release in Fall 2002. [ Press Release ] · Paragon Innovations and US LED Ltd. have jointly introduced LEDtechnology that outperforms neon in commercial signage applications. Energy usage by LEDs in signage applications is 10 to 20 percent that of neon and the LED sign lasts 100,000 hours, or about 44 years at 6 hours per day. Although initially more expensive than neon, the LED signs allow businesses to recover the costs of replacing neon in about three years. The product is also modular, allowing the sign to remain lit even if a section ceases to function. [ Press Release ] · Sanken Electric Company Ltd. (Japan) has developed super bright AlGaInP-on-silicon red (620 nm) and yellow (590 nm) LEDs; the company claims that they are 50 to 100% brighter than conventional LEDs. These brighter LEDs were manufactured using Sanken’s silicon wafer direct bonding technology. Samples are due out in October 2002, with commercial production expected in Spring 2003. Detailed specifications for the LEDs are available at the Sanken website. [ Press Release & Specifications ] · TIR Systems has developed a new RGB colorwash fixture, the Destiny Colorwash Luminaire. The Destiny fixture uses 60 Lumileds’ Luxeon 1-Watt red, green and blue LEDs, which can be mixed to produce the full range of light colors, including white. The LEDs produce between 5 and 40 lumens of light, resulting in a product with light output comparable to halogen and metal halide lamps. The Destiny Colorwash Luminaire measures 11”wide x 13”long x 2.5” deep. It will ship in the fourth quarter of 2002. [ Press Release ] · UEC has announced the development of a large-area, high-power AlGaInP LED. Using its patented metal-bonding technology, the AlGaInP LED epiwafer can be bonded to a silicon substrate. The finished chip measures up to 2.5 mm x 2.5 mm. The LED chip can be operated at more than 5 A without saturation, with a total flux of 200 lumens in a single chip. Mass-production of this LED chip will start in the fourth quarter of 2002. UEC also announced that the technology for bonding AlGaInP LED epiwafers to heat sink materials, such as aluminum and copper, is under development and samples will be released later this year. [ Article at CompoundSemiconductor.net] C. Novel LED Lighting Applications · Inventors Yves Sinner and Sylvain Willenz have invented a portable, solar-powered white LED light source bright enough for lighting use in developing countries and in disaster areas. “Re-light” was in part developed because of the thousands of children killed or maimed each year in fires started by oil lamps or candles.The light measures 107 x 99 x 25 mm. A solar panel measuring 74 x 82 mm charges four nickel metal hydride batteries, which then power the light. Light intensity is 3000 mcd with a color temperature of 8000 K. On a single charge, the light lasts for 10 hours. The lifespan of the Re-light product is up to 3 years. [ Article and picture in Optics.org ] Sylvain Willenz is a Design Products student at the Royal College of Art in the UK, and Yves Sinner is a Luxembourg-based designer. [For more about this effort and another picture of the product, see BSI press release.] D. Research Results · Scientists at the Georgia Institute of Technology have developed a single-molecule light source that produces multi-color electroluminescence from molecules of silver. The light is emitted by individual molecules that occur together in clusters of 2-8 molecules. The size of the cluster determines the color of the emission. The luminescence occurs within electrically discolored regions of an activated silver oxide film. The research was published in “Strongly enhanced field-dependent single-molecule electroluminescence,” T.-H. Lee, J. I. Gonzalez, and R. M. Dickson, Proceedings of the National Academy of Sciences, 99(16): 10272-10275 (August 6, 2002). [ Abstract ] · Researchers working at IBM’s Microelectronics division have devised a way to use electron holography to obtain direct, quantitative information on the distribution of dopants in semiconductor materials. A good agreement was achieved between the results of secondary ion mass spectrometry, process simulations, and electrostatic potential maps obtained using electron holography. Estimates of junction depth and electrostatic potential were similar using all three techniques. This research was published in “Mapping of electrostatic potential in deep submicron CMOS devices by electron holography,” M.A. Gribelyuk, M.R. McCartney, J. Li, C.S. Murthy, P. Rohsheim, B. Doris, J. S. McMurray, S. Hedge and D.J. Smith, Physical Review Letters 89:25502 (July 8, 2002). [ Abstract ] · Rice University and Baylor College of Medicine scientists have developed single-walled carbon nanotubes with different diameters and chiralities that fluoresce in wavelengths between 800 and 1600 nm when stabilized and separated. Stabilization was achieved using sonication and sodium dodecyl sulfate, with separation achieved by centrifugation. Side wall protonation under acid was used to quench the emission. The findings were published in “Band gap fluorescence from individual single-walled carbon nanotubes,” M.J. O’Connell, S.M. Bachilo, C.B. Huffman, V.C. Moore, M.S. Strano, E.H. Haroz, K. L. Rialon, P. J. Boul, W. H. Noon, C. Kittrell, J. Ma, R. H. Hauge, R. B. Weisman, R. E. Smalley, Science 297(5581):593-596 (July 26, 2002). · Scientists with RWTH (Germany), the Stepanov Institute of Physics (Belarus) and Aixtron have announced the development of an InGaN/GaN-on-Si blue lasers. According to specifications discussed in a presentation given at the International Workshop on Nitride Semiconductors (July 22-25, Aachen, Germany), the device wavelength is centered on 447 nm, the output power is 8 mW, and a power density of 270 kW/cm2 can be obtained. [ Article at CompoundSemiconductor.net] · Researchers at the University of Lyon (France) have made water droplets emit white light when stimulated by a laser. Pulses from a titanium-sapphire laser lasting 120 femtoseconds were used to create nanosized regions of plasma inside water droplets, which got hot enough to emit white light when stimulated. This technology can be used to monitor the composition of clouds and pollutants in the atmosphere. Collaborators in this research include the US Army Research Laboratory (Maryland), Freie Universitaet Berlin (Germany) and Yale University. This research waspublished in “White-light nanosource with directional emission,” C. Favre, V. Boutou, S.C. Hill, W. Zimmer, M. Krenz, H. Lambrecht, J. Yu, R.K. Chang, L. Woeste, and J.-P. Wolf, Physical Review Letters 89, 035002 (July 15, 2002). [ Article in Optics.org ] E. Government Funding News and Opportunities · A brief article summarizing government funded SSL research appeared in the September issue of IEEE Spectrum online, “ Government Funds Energize Solid-State Lighting Research.” The article briefly describes the Energy Bill and notes that the U.S. government has several R&D initiatives that benefit high-brightness LEDs, including that at Sandia National Laboratories, and other smaller programs in DARPA, the Office of Naval Research and Lawrence Berkeley National Lab. It also notes government-funded efforts in Japan and Europe. · The European Union will fund photonics research under its 6th FrameworkProgramme (FP6). Of the 17.5 billion Euro budget allotted to research, 3.65 billion Euros have been set aside for photonics. Additional funding for photonics research might come from the other four research areas to be funded: nanotechnology; genomics and biotechnology; aeronautics and space, and; energy, transport and the environment. The first call for FP6 projects will be in November 2002, with projects start dates as early as March 2003. Projects that promote integration between EU scientists, particularly those that include research activities of associate and candidate states from eastern Europe, are likely to be emphasized, according to Henri Rajbenback, the photonics coordinator of the Information Society Technology (IST) Directorate General. Projects initiated under the 5th Framework Program, including the VGF project that investigates GaP substrates for HB-LEDs, will be continued and expanded to include eastern European partners. [ Article in Optics.org ] · NSF SBIR/STTR FY-2002 - Topic K Electronic Materials (EL), Electronics: Semiconductor and Other Materials. (Solicitation opens: October 1, 2002. Closing Date: January 22, 2003. Detail here: http://www.eng.nsf.gov/sbirspecs/EL/el.htm. [ SBIR/STTR Submission Guidelines]) The Electronics topic has 16 subtopics grouped in three areas -- (1) Detectors, Sensors, Instruments, and Systems, (2) Electronic Materials, and (3) Microelectronics Manufacturing. A portion of the materials section is shown below: NSF is interested in all manner of advanced materials with potential for improved utility in micro-, nano-, and bio-electronic devices, and in micromagnetics. These materials include those used in mainstream integrated circuits (ICs) such as high-k and low-k dielectrics, silicon-on-insulator (SOI) materials, resists, spin electronics, and interconnected metals, among others. Other materials include those relevant to flat panel displays; mass storage,semiconductors for microwave and radio applications; and materials for opto-electronics applications, including optical computing, communications, and mass storage. … Topic K: Materials research proposals are invited in the characteristics and electronic properties of advanced silicon, compound semiconductors, photonic materials and crystals, thin film and metallized materials, high temperature, high power, high frequency materials, heat sink materials, superconductors, self-assembled and other polymers, dielectrics and nitride compounds, and magnetic materials, among other advanced materials. Research under this subtopic extends to electronic and photonic behavior of configured materials arrayed in components and devices such as integrated circuits (ICs). · NSF has been accepting proposals from U.S. institutions to support innovative collaborative research with scientists from European countries. Projects to be supported by NSF through this competition were to have clear relevance to materials phenomena, synthesis, characterization, properties and/or processing. (See “Proposals for Cooperative Activities in Materials Research Between U.S. and European Investigators,” Dear Colleague Letter - nsf02135; Closing Date: September 16, 2002. Detail: http://www.nsf.gov/pubs/2002/nsf02135/nsf02135.htm.) F. Overview Articles · Compound Semiconductor has devoted its July 2002 issue to wide-bandgap semiconductors. The issue includes an article reviewing SiC, sapphire, bulk GaN, bulk AlN, and Si substrates for GaN manufacture, entitled "Perfect substrate within reach for wide-band gap materials". Additional articles cover European and Japanese wide-bandgap initiatives, as well as GaAs materials and devices, the ONR Roadmapping, optical communications, and spintronics. [ Table of Contents ] · Compound Semiconductor ran an article in July 2002 providing an overview and update of Japan’s Light for the 21st Century project. The project is a government initiative, begun in 1998, to reduce energy consumption and lower Japan’sgreenhouse gas emissions through the development of UV LEDs for solid-state white lighting. The program ends in 2004. The five key areas funded by the initiative are: substrates, epitaxy, devices, lamps and fixtures. Participants in the program include: the Japan Research and Development Center for Metals, which is both host and a funder; Sumitomo Electric; Japan Energy; Furukawa Electric; Sumitomo Chemical; Mitsubishi Cable Industries; Showa Denko; Stanley Electric; Kasei Optronix; Mitsubishi Electric Lighting; Omron; Agilent; Yamada Shomei Lighting; Namiki Precision Jewel, and the Universities of Yamaguchi, Mie, Tokushima and Tokyo. Japan Light Tubes, whose role is to standardize future LED lamps for general lighting use, is also a member. The program is administered by the New Energy and Industrial Technology Development Organization (NEDO), which is affiliated with Japan's Ministry of Economy, Trade and Industry. [ Article in Compound Semiconductor] · EE Times featured the white LED lamp market in an overview article that appeared in its July 2002 issue. The article by Yoshiko Hara, entitled “White LED lamp market brightens”, featured advancements in backlighting for mobile displays, automotive lighting and other lighting advances by Nichia, Citizen’s Electronics, Toyoda Gosei, Toshiba, Matsushita Electric Industrial Company, Cree, Fairchild Semiconductor, Sharp, LEDtronics, Kingbright, Osram Opto Semiconductors, Yamada Shomei Lighting, and the Solid State Lighting and Display Center (University of California-Santa Barbara). [ Article in EE Times ] · A special R&D report on GaN LEDs appeared in the September 2002 issue of IEEE Spectrum online, “Let There be Light.” This extensive feature covered work by Color Kinetics, Nichia, Lumileds, Osram, Cree, GELcore, Rohm, Sandia National Lab, Toshiba, Toyoda Gosei, and Mitsubishi. A sidebar contains detail on Lumileds Luxeon white LED, described as the world’s brightest white LED so far.[ Article in IEEE Spectrum] · The July 2002 issue of MRS Bulletin was devoted to VCSELs. The special issue is edited by K.L. Lear and E.D. Jones. The article by A. Nurmikko and J. Han entitled “Blue and near-ultraviolet vertical-cavity surface-emitting lasers” is of particular interest as is the article by D. Bimberg, N. N. Ledentsov and J. A. Lott entitled, “Quantum-dot vertical-cavity surface-emitting lasers.” [ Table of contents for this issue] · In an article appearing in the May 2002 edition of Opto & Laser Europe, entitled “Gradual progress for high-brightness LEDs,” recent advances in high-brightness LEDs were reviewed. These advances include Lumileds’ and Osram Opto Semiconductors’ automotive LED applications, Nichia’s increased output power for surface-mount white LEDs and Cree’s new green-emitting LEDs. The article also highlights the Next Generation Lighting Initiative and discusses the reasons why the HB-LED market is growing by more than 50% a year. [ Article in Opto & Laser Europe · Semiconductor Science and Technology devoted its August 2002 issue to III-N-V semiconductor alloys. Articles in this issue include “Current status of research and development of III-N-V semiconductor alloys" by J W Ager III and W Walukiewicz, “Molecular beam epitaxy of GaNAs and GaInNAs” by M Kondow and T Kitatani, and “Growth and structural characterization of III-N-V semiconductor alloys” by I Suemune, K Uesugi and T-Y Seong. [ Table of Contents ] G. Conferences · The American Conference on Crystal Growth and Epitaxy was held August 4-9, in Seattle, Washington. The plenary session, “Fifty Years of Progress in Crystal Growth”, featured presentations on: “MBE - From SmallBeginnings to Nanostructures to ?”, by Tim Joyce (University of Liverpool, UK) and Bruce Joyce (Imperial College, UK); the “Development and Current Status of Organometallic Vapor Phase Epitaxy” by Gerald Stringfellow (University of Utah); “A History of Defect Formation, Segregation, Faceting and Twinning in Melt-Grown Semiconductors” by Peter Rudolph (Czochralski Semiconductor Compounds, Institute of Crystal Growth, Germany) and D.T.J. Hurle (Bristol University, UK). [Details of the conference, including a copy of the program, can be found at the ACGE 14th Annual Conference Website .] · The International Workshop on Nitride Semiconductors took place July 22-25, 2002, at Aachen, Germany. Some 333 posters and presentations were given in the following areas: epitaxial growth (MOVPE, MBE, CBE, VPE, alternative precursors, regrowth, new alloys); substrates (lateral epitaxial growth, bulk crystals, SiC, thick GaN layers, oxides, new materials); defects and doping (effect structures and their characterization, new dopants); interface physics electronic surface and interface states, interface polarization charges, adsorption andsurface reaction); optical characterization (exciton physics, optical surfacespectroscopy (ellipsometry, RAS, PL, CL)); electrical characterization (carrier transport, magneto-transport, photoconductivity, CV-techniques); quantum structures (fabrication of low dimensional structures and their optical and/or electrical properties); processing (etching (dry, wet), cleaving, high reflection coatings, passivation, ohmic and Schottky contacts), and; devices (LDs, LEDs, FETs, HBTs, optical detectors, other sensors). The abstracts and program for the workshop can be downloaded from the website. [ IWN 2002 Website ] · Intertech is sponsoring two conferences this fall: Light Emitting Diodes 2002 on October 21-23, 2002 and OLEDs 2002 on November 13-15, 2002, both in San Diego. The conference chairs for Light Emitting Diodes are Kathryn Conway (LED Consulting) and Klaus Streubel (Osram Opto Semiconductors). There will be two preconference seminars, the first entitled "Fundamentals of white LEDs" and the second entitled "System Lighting Design with high power LEDs." Session topics at Light Emitting Diodes 2002 include: LED development and market progress; technology updates on white LEDS and high-brightness LEDs; support for SSL research; architectural and display applications; and enabling technologies. The conference brochure for Light Emitting Diodes is available at http://www.intertechusa.com/leds2002.pdf . The brochure for the OLEDs conference can be downloaded at: http://www.intertechusa.com/oleds.pdf. [Intertech Website ] · SPIE held its Solid State Lighting II conference as part of its 47th annual meeting on July 9 -11 in Seattle, Washington. The Conference was chaired by Ian Ferguson of Georgia Tech, Nadaranjah Narendran of Rensselaer Polytechnic, Steven DenBaars of UCSB, and YS Park of the Office of Naval Research. Sessions covered the future of SSL, applications, phosphor technology, packaging, and a number of sessions on SSLlighting sources. Participants included representatives from these companies and institutions: AXT, Inc., Color Kinetics, Cree, DARPA, DOE, EMCORE, ENEA (Italy), GE Corporate R&D/GE Global Research Center, GELcore, Georgia Institute of Technology, Highlink Technology, Ltd. (China), Inst. Of Inorganic Chemistry (Russia), ITRI (Taiwan), Kansas State Univ., Kwangju Institute (Korea), Lawrence Berkeley National Lab, Lumileds, Nacional Atomnoma de Mexico, O2Wireless Soluctions, Office of Naval Research, Osmania Univ (India), Rensselaer Polytechnic, Samsung (Korea), Sensor Electronic Technology, Inc., Stanley Electric, Strategies Unilimited, TIR Systems, UCSB, UCSD, Yamaguchi University (Japan). The program listing session details: http://www.spie.org/Conferences/Programs/02/am/confs/4776.html. |
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